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Książki na temat „III-V technology”

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Data publikacji: 15 czerwca 2024

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1

Ayşe, Erol, red. Dilute III-V nitride semiconductors and material systems: Physics and technology. Berlin: Springer, 2008.

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Erol, Ayşe. Dilute III-V nitride semiconductors and material systems: Physics and technology. Berlin: Springer, 2008.

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Ayşe, Erol, red. Dilute III-V nitride semiconductors and material systems: Physics and technology. Berlin: Springer, 2008.

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4

Li, Tingkai, Michael A. Mastro i Armin Dadgar. III-V compound semiconductors: Integration with silicon-based microelectronics. Boca Raton: Taylor & Francis, 2010.

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Conference on Semi-insulating III-V Materials (5th 1988 Malmö, Sweden). Semi-insulating III-V materials: Malmö, 1988 : proceedings of the 5th Conference on Semi-insulating III-V Materials held in Malmö, Sweden, 1-3 June 1988. Bristol, England: A. Hilger, 1988.

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6

Ekaterinburg, Russia) Mezhdunarodnyĭ nauchno-prakticheskiĭ seminar "Intellektualʹnye informat︠s︡ionnye tekhnologii v. upravlencheskoĭ dei︠a︡telʹnosti" (3rd 2001. Intellektualʹnye informat︠s︡ionnye tekhnologii v upravlencheskoĭ dei︠a︡telʹnosti: III Mezhdunarodnyĭ nauchno-prakticheskiĭ seminar, 23-24 i︠a︡nvari︠a︡ 2001 g. : materialy. Ekaterinburg: Uralʹskiĭ gos. tekhn. universitet, 2001.

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Mezhdunarodnai︠a︡, nauchnai︠a︡ konferent︠s︡ii︠a︡ "Chelovek kulʹtura i. obshchestvo v. kontekste globalizat︠s︡ii sovremennogo mira" (3rd 2004 Moscow Russia). Chelovek, kulʹtura i obshchestvo v kontekste globalizat︠s︡ii sovremennogo mira: Ėlektronnai︠a︡ kulʹtura i novye gumanitarnye tekhnologii XXI veka : materialy III Mezhdunarodnoĭ nauchnoĭ konferent︠s︡ii. Moskva: Izd-vo "Nezavisimyĭ in-t grazhdanskogo ob-va", 2004.

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Soldatkina, I͡A V., i Elena I͡Urʹevna Lazareva. Mediĭnye prot︠s︡essy v sovremennom gumanitarnom prostranstve: Podkhody k izuchenii︠u︡, ėvoli︠u︡t︠s︡ii︠a︡, perspektivy : materialy III nauchno-prakticheskoĭ konferent︠s︡ii. Moskva: MPGU, 2017.

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Belarus) Mezhdunarodnai︠a︡ konferent︠s︡ii︠a︡ "Informat︠s︡ionnye sistemy i tekhnologii" (3nd 2006 Minsk. Informat︠s︡ionnye sistemy i tekhnologii (IST'2006): Tretʹi︠a︡ Mezhdunarodnai︠a︡ konferent︠s︡ii︠a︡ (Minsk, 1--3 noi︠a︡bri︠a︡ 2006 g.) : materialy : v 2 chasti︠a︡kh = Information systems and technologies (IST'2006) : proceedings of the III International conference (Minsk, November 1--3, 2006) In two parts. Minsk: Akademii︠a︡ upravlenii︠a︡ pri Prezidente Respubliki Belarusʹ, 2006.

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10

United States. National Aeronautics and Space Administration., red. Growth and characterization of binary and pseudo-binary III-V compounds exhibiting non-linear optical behavior and undergraduate research opportunities in microgravity science and technology. [Washington, DC: National Aeronautics and Space Administration, 1992.

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11

Conference on Physics and Technology of GaAs and other III-V Semiconductors (2nd 1986 Budapest, Hungary). Gallium arsenide: Proceedings of the Second Conference on Physics and Technology of GaAs and other III-V Semiconductors, held in Budapest, Hungary, September 8-11, 1986. Redaktorzy Lendvay E i Magyar Tudományos Akadémia. [Aedermannsdorf], Switzerland: Trans Tech Publications, 1987.

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12

Prost, Werner. Technologie der III/V-Halbleiter. Berlin, Heidelberg: Springer Berlin Heidelberg, 1997. http://dx.doi.org/10.1007/978-3-642-60786-8.

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13

Tiku, Shiban, i Dhrubes Biswas. III-V Integrated Circuit Fabrication Technology. Jenny Stanford Publishing, 2016.

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14

Tiku, Shiban, i Dhrubes Biswas. III-V Integrated Circuit Fabrication Technology. Taylor & Francis Group, 2016.

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15

Tiku, Shiban, i Dhrubes Biswas. III-V Integrated Circuit Fabrication Technology. Jenny Stanford Publishing, 2016.

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Li, Tingkai, Armin Dadgar i Michael Mastro. III V Compound Semiconductors. Taylor & Francis Group, 2011.

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Tomashyk, Vasyl. Multinary Alloys Based on III-V Semiconductors. Taylor & Francis Group, 2018.

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Tomashyk, Vasyl. Multinary Alloys Based on III-V Semiconductors. Taylor & Francis Group, 2018.

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Tomashyk, Vasyl. Multinary Alloys Based on III-V Semiconductors. Taylor & Francis Group, 2018.

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Tomashyk, Vasyl. Multinary Alloys Based on III-V Semiconductors. Taylor & Francis Group, 2021.

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Tomashyk, Vasyl. Multinary Alloys Based on III-V Semiconductors. Taylor & Francis Group, 2018.

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22

Tomashyk, Vasyl. Multinary Alloys Based on III-V Semiconductors. Taylor & Francis Group, 2018.

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23

Properties of Group-IV, III-V and II-VI Semiconductors. New York: John Wiley & Sons, Ltd., 2005.

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Erol, Ayse. Dilute III-V Nitride Semiconductors and Material Systems: Physics and Technology. Springer, 2010.

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25

Nirmal, D., i J. Ajayan. Handbook for III-V High Electron Mobility Transistor Technologies. Taylor & Francis Group, 2020.

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Nirmal, D., i J. Ajayan. Handbook for III-V High Electron Mobility Transistor Technologies. Taylor & Francis Group, 2019.

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Nirmal, D., i J. Ajayan. Handbook for III-V High Electron Mobility Transistor Technologies. Taylor & Francis Group, 2019.

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Nirmal, D., i J. Ajayan. Handbook for III-V High Electron Mobility Transistor Technologies. Taylor & Francis Group, 2019.

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29

Li, Tingkai, Armin Dadgar i Michael Mastro. III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics. Taylor & Francis Group, 2016.

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30

Li, Tingkai, Armin Dadgar i Michael Mastro. III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics. Taylor & Francis Group, 2016.

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Tomashyk, Vasyl. Quaternary Alloys Based on III-V Semiconductors. Taylor & Francis Group, 2018.

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32

Tomashyk, Vasyl. Quaternary Alloys Based on III-V Semiconductors. Taylor & Francis Group, 2018.

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33

Tomashyk, Vasyl. Quaternary Alloys Based on III-V Semiconductors. Taylor & Francis Group, 2020.

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Tomashyk, Vasyl. Quaternary Alloys Based on III-V Semiconductors. Taylor & Francis Group, 2018.

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35

Tomashyk, Vasyl. Quaternary Alloys Based on III-V Semiconductors. Taylor & Francis Group, 2018.

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36

Tomashyk, Vasyl. Quaternary Alloys Based on III-V Semiconductors. Taylor & Francis Group, 2018.

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37

Madelung, Otfried. Semiconductors: Group IV Elements and Iii-V Compounds (Data in Science and Technology). Springer-Verlag, 1991.

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38

Grossman. Semi-insulating III-V Materials, Malmo 1988, Proceedings of the 5th Conference on Semi-insulating III-V Materials, Malmo, Sweden, 1-3 June 1988. Taylor & Francis, 1988.

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39

Madelung, Otfried. Semiconductors: Others Than Group IV Elements and Iii-V Compounds (Data in Science and Technology). Springer, 1992.

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40

Heime, Klaus. Indium Gallium Arsenide Field-effect Transistors (Electronic & Electrical Engineering Research Studies - III-V Compound Technology Series). Research Studies Press, 1989.

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41

Rössler, U., i W. von der Osten. Intrinsic Properties of Group IV Elements and III-V, II-VI and I-VII Compounds / Intrinsische Eigenschaften von Elementen der IV. Gruppe und von III-V-, ... Relationships in Science & Technology). Springer, 1986.

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42

Pearton, S. J., C. R. Abernathy i F. Ren. Topics in Growth and Device Processing of Iii-V Semiconductors (International Series on Advances in Solid State Electronics and Technology). World Scientific Publishing Company, 1996.

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43

(Contributor), T. Dalibor, R. P. Devaty (Contributor), P. Giannozzi (Contributor), W. Kulisch (Contributor), B. Meyer (Contributor), R. Murray (Contributor), R. C. Newman (Contributor), L. Pavesi (Contributor), G. Pensl (Contributor) i A. Willoughby (Contributor), red. Impurities and Defects in Group IV-IV and III-V Compounds: Supplement to Vol. III/22b (Print Version), Revised and Updated Edition of Vol. III/22b (CD-ROM) ... in Science and Technology - New Series, B). Springer, 2003.

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44

Growth and characterization of binary and pseudo-binary III-V compounds exhibiting non-linear optical behavior and undergraduate research opportunities in microgravity science and technology. [Washington, DC: National Aeronautics and Space Administration, 1992.

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45

Hepp, A. F. Covalent Ceramics III: Science and Technology of Non-Oxides : Symposium Held November 27-29, 1995, Boston, Massachusetts, U.S.A (Materials Research Society Symposia Proceedings, V. 410.). Materials Research Society, 1996.

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46

Conference on Physics and Technology of GaAs and other III-V Semiconductors (2nd 1986 Budapest, Hungary). Gallium arsenide: Proceedings of the second conference on Physics and Technology of GaAs and other III-V Semiconductors, held in Budapest, Hungary, September 8-11, 1986. Redaktorzy Lendvay E i Magyar Tudoma nyos Akade mia. Switzerland ; Distributed in North America by Trans Tech Publications, Brookfield, VT, 1987.

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47

Brownsword, Roger, Eloise Scotford i Karen Yeung, red. The Oxford Handbook of Law, Regulation and Technology. Oxford University Press, 2016. http://dx.doi.org/10.1093/oxfordhb/9780199680832.001.0001.

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Streszczenie:

This book brings together leading scholars from law and other disciplines to explore the relationship between law, technological innovation, and regulatory governance. It is organized into five parts. Part I provides an overview of the volume, identifies its aims, explains its organization, locates it within existing scholarship, and identifies major themes that emerge from the individual chapter contributions. Part II examines core normative values that are implicated or affected by technological developments and which recur in attempts to ground the legitimacy of emerging technologies within liberal democratic societies. Part III focuses on the challenges that technological development poses for law, legal doctrine, and legal institutions, and the constraints that these legal frameworks pose for the development of technologies. Part IV provides a critical exploration of the implications for regulatory governance of technological development, and considers both attempts to regulate new technologies (typically with the aim of managing risks associated with their emergence while seeking to promote their potential benefits) and the way in which new technologies may be utilized as instruments of regulatory governance with the aim of restraining and managing social risks. Part V explores the interface between law, regulatory governance, and emerging technologies in specific policy sectors, namely: medicine and health; population, reproduction, and the family; trade and commerce; public security; communications, media and culture; and food, water, energy, and the environment.

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48

Technologie der III/V-Halbleiter: III/V-Heterostrukturen und elektronische Höchstfrequenz-Bauelemente. Berlin, Heidelberg: Springer Berlin Heidelberg, 1997.

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49

Prost, Werner. Technologie der III/V-Halbleiter. III/V-Heterostrukturen und elektronische Höchstfrequenz-Bauelemente. Springer Verlag, 1997.

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50

Solymar, L., D. Walsh i R. R. A. Syms. Semiconductors. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198829942.003.0008.

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Streszczenie:

Both intrinsic and extrinsic semiconductors are discussed in terms of their band structure. The acceptor and donor energy levels are introduced. Scattering is discussed, from which the conductivity of semiconductors is derived. Some mathematical relations between electron and hole densities are derived. The mobilities of III–V and II–VI compounds and their dependence on impurity concentrations are discussed. Band structures of real and idealized semiconductors are contrasted. Measurements of semiconductor properties are reviewed. Various possibilities for optical excitation of electrons are discussed. The technology of crystal growth and purification are reviewed, in particular, molecular beam epitaxy and metal-organic chemical vapour deposition.

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