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Gotowe bibliografie tematyczne / III-V compound semiconductor nanostructures / Książki

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Książki na temat „III-V compound semiconductor nanostructures”

Autor: Grafiati

Data publikacji: 6 września 2023

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Sprawdź 21 najlepszych książek naukowych na temat „III-V compound semiconductor nanostructures”.

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1

Yates, Martin John. Electron microscopy of compound III-V semiconductor layers. Birmingham: University ofBirmingham, 1987.

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2

Wilmsen, Carl W., red. Physics and Chemistry of III-V Compound Semiconductor Interfaces. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4684-4835-1.

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3

W, Wilmsen Carl, red. Physics and chemistry of III-V compound semiconductor interfaces. New York: Plenum Press, 1985.

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4

Doping in III-V semiconductors. Cambridge [England]: Cambridge University Press, 1993.

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5

Liquid-phase epitaxial growth of III-V compound semiconductor materials and their device applications. Bristol: A. Hilger, 1990.

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6

V, Swaminathan, Pearton S. J, Manasreh Mahmoud Omar i Materials Research Society, red. Degradation mechanisms in III-V compound semiconductor devices and structures: Symposium held April 17-18, 1990, San Francisco, California, U.S.A. Pittsburgh, Pa: Materials Research Society, 1990.

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7

Wilmsen, Carl. Physics and Chemistry of III-V Compound Semiconductor Interfaces. Springer London, Limited, 2013.

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8

Wilmsen, Carl W. Physics and Chemistry of III-V Compound Semiconductor Interfaces. Springer, 2012.

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9

III-V Compound Semiconductors and Semiconductor Properties of Superionic Materials. Elsevier, 1988. http://dx.doi.org/10.1016/s0080-8784(08)x6008-9.

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10

Chang, Kow-Ming. Thermodynamics of groups III-V and II-VI compound semiconductors. 1985.

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11

Pearton, S. J., D. K. Sadana i J. M. Zavada. Advanced III-V Compound Semiconductor Growth, Processing and Devices: Volume 240. University of Cambridge ESOL Examinations, 2014.

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12

Schubert, E. F. Doping in III-V Semiconductors (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering). Cambridge University Press, 2005.

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13

Pearton, S. J., M. O. Manasreh i V. Swaminathan. Degradation Mechanisms in III-V Compound Semiconductor Devices and Structures: Volume 184. University of Cambridge ESOL Examinations, 2014.

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14

J, Pearton S., Sadana Devendra K i Zavada J. M, red. Advanced III-V compound semiconductor growth, processing and devices: Symposium held December 2-5, 1991, Boston, Massachusetts, U.S.A. Pittsburgh, Pa: Materials Research Society, 1992.

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15

Willardson, R. K. Semiconductors and Semimetals: Iii-V Compound Semiconductors Semiconductor Properties of Superionic Materials (Semiconductors and Semimetals). Academic Press, 1988.

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16

Schulte, Donald W. Growth and characterization of III-V compound semiconductor materials for use in novel MODFET structures and related devices. 1995.

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17

(Editor), Philippe Max Fauchet, Jillian M. Buriak (Editor), Leigh T. Canham (Editor), Mobuyoshi Koshida (Editor) i Burce E. White (Editor), red. Microcrystalline and Nanocrystalline Semiconductors--2000: Symposium Held November 27-30, 2000, Boston, Massachusetts, U.S.A. (Materials Research Society Symposia Proceedings, V. 638.). Materials Research Society, 2001.

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18

Pearton, S. J., i V. Swaminathan. Degradation Mechanisms in Iii-V Compound Semiconductor Devices and Structures: Symposium Held April 17-18, 1990, San Francisco (Materials Research Society Symposium Proceedings). Materials Research Society, 1990.

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19

Vvedensky, Dimitri D. Quantum dots: Self-organized and self-limiting assembly. Redaktorzy A. V. Narlikar i Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533060.013.6.

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This article describes the self-organized and self-limiting assembly of quantum dots, with particular emphasis on III–V semiconductor quantum dots. It begins with a background on the second industrial revolution, highlighted by advances in information technology and which paved the way for the era of ‘quantum nanostructures’. It then considers the science and technology of quantum dots, followed by a discussion on methods of epitaxial growth and fabrication methodologies of semiconductor quantum dots and other supported nanostructures, including molecular beam epitaxy and metalorganic vapor-phase epitaxy. It also examines self-organization in Stranski–Krastanov systems, site control of quantum dots on patterned substrates, nanophotonics with quantum dots, and arrays of quantum dots.

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20

Li, Jing, i Xiao-Ying Huang. Nanostructured crystals: An unprecedented class of hybrid semiconductors exhibiting structure-induced quantum confinement effect and systematically tunable properties. Redaktorzy A. V. Narlikar i Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533053.013.16.

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This article describes the structure-induced quantum confinement effect in nanostructured crystals, a unique class of hybrid semiconductors that incorporate organic and inorganic components into a single-crystal lattice via covalent (coordinative) bonds to form extended one-, two- and three-dimensional network structures. These structures are comprised of subnanometer-sized II-VI semiconductor segments (inorganic component) and amine molecules (organic component) arranged into perfectly ordered arrays. The article first provides an overview of II-VI and III-V semiconductors, II-VI colloidal quantum dots, inorganic-organic hybrid materials before discussing the design and synthesis of I-VI-based inorganic-organic hybrid nanostructures. It also considers the crystal structures, quantum confinement effect, bandgaps, and optical properties, thermal properties, thermal expansion behavior of nanostructured crystals.

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21

Glazov, M. M. Hyperfine Interaction of Electron and Nuclear Spins. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198807308.003.0004.

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This chapter discusses the key interaction–hyperfine coupling–which underlies most of phenomena in the field of electron and nuclear spin dynamics. This interaction originates from magnetic interaction between the nuclear and electron spins. For conduction band electrons in III–V or II–VI semiconductors, it is reduced to a Fermi contact interaction whose strength is proportional to the probability of finding an electron at the nucleus. A more complex situation is realized for valence band holes where hole Bloch functions vanish at the nuclei. Here the hyperfine interaction is of the dipole–dipole type. The modification of the hyperfine coupling Hamiltonian in nanosystems is also analyzed. The chapter contains also an overview of experimental data aimed at determination of the hyperfine interaction parameters in semiconductors and semiconductor nanostructures.

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