Gotowe bibliografie tematyczne / III Nitride UV Detector

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Gotowa bibliografia na temat „III Nitride UV Detector”

Autor: Grafiati
Data publikacji: 6 września 2023

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Artykuły w czasopismach na temat "III Nitride UV Detector"

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Mitra, Somak, Mufasila Mumthaz Muhammed, Norah Alwadai, Dhaifallah R. Almalawi, Bin Xin, Yusin Pak i Iman S. Roqan. "Optimized performance III-nitride-perovskite-based heterojunction photodetector via asymmetric electrode configuration". RSC Advances 10, nr 10 (2020): 6092–97. http://dx.doi.org/10.1039/c9ra08823g.

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Enhanced perovskite/GaN-based broad-band photodetector is demonstrated by optimizing electrode configurations. The detection capability of the optimized perovskite/GaN structure was extended to UV range with fast response and high responsivity.
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Nikzad, Shouleh, Michael Hoenk, April Jewell, John Hennessy, Alexander Carver, Todd Jones, Timothy Goodsall i in. "Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials". Sensors 16, nr 6 (21.06.2016): 927. http://dx.doi.org/10.3390/s16060927.

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Mohammad, S. N., W. Kim, A. Salvador i H. Morkoç. "Reactive Molecular-Beam Epitaxy for Wurtzite GaN". MRS Bulletin 22, nr 2 (luty 1997): 22–28. http://dx.doi.org/10.1557/s0883769400032528.

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A1N, GaN, and InN are very promising materials for use in optoelectronic and high-temperature electronic devices. These materials and their ternary and quaternary alloys cover an energy bandgap range of 1.9–6.2 eV, suitable for band-to-band light generation with colors ranging from red to ultraviolet (uv), with wavelengths ranging from 650 to 200 nm. On the device front, they are suitable for example for negative electron-affinity cold cathodes, electronic devices, surface acoustic wave devices, uv detectors, Bragg reflectors and waveguides, uv and visible light-emitting diodes (LEDs), and laser diodes (LDs) for digital data read-write applications. Stifled by the absence of native substrates, growth and doping of high-quality III-V-nitride thin films, particularly p-type, have been major obstacles for developing GaN-based devices. Development of electronic devices such as modulation-doped field-effect transistors (MODFETs) and opto-electronic devices such as LEDs and LDs has also proven challenging.
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Chang, P. C., K. H. Lee, S. J. Chang, Y. K. Su, T. C. Lin i S. L. Wu. "III-Nitride Schottky Rectifiers With an AlGaN/GaN/AlGaN/GaN Quadruple Layer and Their Applications to UV Detection". IEEE Sensors Journal 10, nr 4 (kwiecień 2010): 799–804. http://dx.doi.org/10.1109/jsen.2009.2034626.

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Kuball, M., M. Benyoucef, F. H. Morrissey i C. T. Foxon. "Focused Ion Beam Etching of Nanometer-Size GaN/AlGaN Device Structures and their Optical Characterization by Micro-Photoluminescence/Raman Mapping". MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 950–56. http://dx.doi.org/10.1557/s1092578300005317.

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We report on the nano-fabrication of GaN/AlGaN device structures using focused ion beam (FIB) etching, illustrated on a GaN/AlGaN heterostructure field effect transistor (HFET). Pillars as small as 20nm to 300nm in diameter were fabricated from the GaN/AlGaN HFET. Micro-photoluminescence and UV micro-Raman maps were recorded from the FIB-etched pattern to assess its material quality. Photoluminescence was detected from 300nm-size GaN/AlGaN HFET pillars, i.e., from the AlGaN as well as the GaN layers in the device structure, despite the induced etch damage. Properties of the GaN and the AlGaN layers in the FIB-etched areas were mapped using UV Micro-Raman spectroscopy. Damage introduced by FIB-etching was assessed. The fabricated nanometer-size GaN/AlGaN structures were found to be of good quality. The results demonstrate the potential of FIB-etching for the nano-fabrication of III-V nitride devices.
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Li, Yu Bo, Jian Wei Zhong, Li Ming Zhou, Chao Lun Sun, Xiao Wang, Hang Sheng Yang i William Milne. "Deep Ultraviolet Photodetector Based on Sulphur-Doped Cubic Boron Nitride Thin Film". Materials Science Forum 879 (listopad 2016): 1117–22. http://dx.doi.org/10.4028/www.scientific.net/msf.879.1117.

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Cubic boron nitride (c-BN) is a wide bandgap III-V compound semiconductor potentially useful for solar-blind photodetectors. This paper describes work on the use of Sulphur doping to adjust the bandgap of c-BN films prepared by plasma-enhanced chemical vapor deposition (PECVD). An S-doped c-BN film based metal-semiconductor-metal (MSM) solar-blind ultraviolet (SBUV) photodetector was successfully fabricated and its electro-optical properties were characterized. The photocurrent shows peak responsivity at 254nm with sharp cutoff wavelengths at 220 and 300 nm, respectively, which is appropriate for use in solar-blind detection. The maximum response reached 1.55×10-7 A/W/cm2 with a rejection ratio of more than three orders of magnitude. The high solar-blind region UV response could be attributed to the successful substitution of boron by Sulphur and the suppression of B vacancies. The experimental results show the same peak in response at around 254nm as is found in the theoretical analysis.
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Wang, Lian Jia, You Zhang Zhu, Hong Xia Wang, Ben Li Liu i Jin She Yuan. "Cathodeluminescence Characterization of AlGaN Film Grown by MOCVD". Advanced Materials Research 143-144 (październik 2010): 966–70. http://dx.doi.org/10.4028/www.scientific.net/amr.143-144.966.

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Recent achievements in III-nitride semiconductor structures growth have allowed ultraviolet (UV) photo-detectors based on these compounds to be well established today. In this article, AlGaN film of 1-μm thickness was grown on Al2O3 substrate by metal-organic chemical vapor deposition (MOCVD). The AFM was used to analyze the surface morphology of the AlGaN film; X-ray diffraction measurements were used to study the quality of the film’ crystal structure; Cathode-ray luminescence(CL) was employed to study the luminescence properties of the AlGaN film. The result shows that there is a single atom layer on the AlGaN film’surface, and it shows that a low-defect-density AlGaN film with good surface morphology and single crystal Hexagonal structure has been obtained. It is found that there is some relationship between the film’crystal structure , dislocations and the luminescence properties . PACS: 73.61.
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Alamoudi, Hadeel, Bin Xin, Somak Mitra, Mohamed N. Hedhili, Singaravelu Venkatesh, Dhaifallah Almalawi, Norah Alwadai, Zohoor Alharbi, Ahmad Subahi i Iman S. Roqan. "Enhanced solar-blind deep UV photodetectors based on solution-processed p-MnO quantum dots and n-GaN p–n junction-structure". Applied Physics Letters 120, nr 12 (21.03.2022): 122102. http://dx.doi.org/10.1063/5.0083259.

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Obtaining p-type wide-bandgap semiconductors with a bandgap >3.5 eV is still challenging. Here, p–n junction devices based on wide-bandgap (≥4 eV) p-type MnO quantum dots (QDs) and n-type Si-doped GaN are fabricated. The p-MnO QDs are synthesized by cost-effective femtosecond laser ablation in liquid. A simple spray-coating method is used for fabricating the p-MnO/n-GaN-based solar-blind deep UV (DUV) photodetector. X-ray diffraction, transmission electron microscopy, and Raman spectroscopy reveal the MnO QD crystal structure. X-ray photoelectron microscopy analysis reveals good band alignment between p-MnO QDs and n-GaN, demonstrating the (type-II) staggered band alignment p–n heterojunction-based device. Electrical and photocurrent measurements show a high photocurrent response with a low dark current, while superior photo-responsivity (∼2530 mA/W) is achieved, along with self-powered and visible-blind characteristics (265 nm cutoff), demonstrating a high-performance DUV device with high detection limit for low light level applications. This study provides insights into the potential of p-type MnO QDs for III-nitride p–n junction DUV devices.
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Chatterjee, Abhijit, Shashidhara Acharya i S. M. Shivaprasad. "Morphology-Related Functionality in Nanoarchitectured GaN". Annual Review of Materials Research 50, nr 1 (1.07.2020): 179–206. http://dx.doi.org/10.1146/annurev-matsci-081919-014810.

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Integrating silicon and III-nitride technologies for high-speed and large bandwidth communication demands optically interconnected active components that detect, process, and emit photons and electrons. It is imperative that multifunctional materials can enhance the performance and simplify fabrication of such devices. Spontaneously grown GaN in the nanowall network (NwN) architecture simultaneously displays unprecedented optical and electrical properties. A two-order increase in band-edge emission makes it suitable for high-brightness light-emitting diodes and laser applications. Decorating this NwN with silver nanoparticles further enhances emission through plasmonic interactions and renders it an excellent surface-enhanced Raman spectroscopy substrate for biomolecular detection. The observation of very high electron mobility (approximately 104 cm2/Vs) and large phase-coherence length (60 μm) is a consequence of two-dimensional (2D) electron gas formation applicable for high electron mobility transistors. Detecting ballistic transport in the nanowalls confirms proximity-induced superconductivity (<5 K and 8 T). Charge separation properties render it a device material for UV photodetectors, photoanodes for water splitting, and thermionic field emitters.
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Muñoz, E., E. Monroy, J. L. Pau, F. Calle, F. Omnès i P. Gibart. "III nitrides and UV detection". Journal of Physics: Condensed Matter 13, nr 32 (26.07.2001): 7115–37. http://dx.doi.org/10.1088/0953-8984/13/32/316.

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Rozprawy doktorskie na temat "III Nitride UV Detector"

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Chang, Shin-Hui, i 張欣會. "Characterization study of III-nitride based metal-semiconductor-metal UV detectors". Thesis, 2008. http://ndltd.ncl.edu.tw/handle/26378681107565782848.

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碩士
中原大學
電子工程研究所
96
In this thesis, III-nitride materials, GaN and AlN, which uniquely present at the same time, the excellent electronic and optoelectronic properties, were employed to fabricate the metal-semiconductor-metal (MSM) photodetectors for UV detection. The native oxide on GaN surface was removed by HCl before the metallization of Al electrodes for MSM devices. The dark current of the GaN MSM photodetector is 100pA at 20V. The ideal factor and Schottky barrier height derived from the dark current are 1.0147 and 0.794eV, respectively. The finger width and space of the interdigital electrodes were varied in order to improve the device performance. The responsivity of the p-type GaN MSM device is 0.0113A/W at 10V when illuminated by He-Cd laser with the power of 1.99mW. It is as good as that of the p-type GaN MSM in the literature. In addition, the photo current increases linearly with the illuminating power, indicating that the GaN MSM devices are suitable for UV light detection. AlN MSM devices were fabricated on AlN epitaxial thin film deposited on GaN/Sapphire substrates using helicon sputtering system at the low temperature of 300°C. The device characteristic was found to be improved by in situ metallization of Al electrodes. The extremely low dark current (1.39pA at 20V), the ideal factor (1.0125) and the Schottky barrier height (0.916eV) are superior compared to those of AlN MSM in the literature. When the device was illuminated by the 150W D2 lamp, the ratio of the induced photocurrent to dark current is more than 2 orders of magnitude. The illumination effect also shows the linear relationship between the radiation power and the photo current for the MSM devices, indicating the potential applicability for deep UV sensors.
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Hsu, Chen-Wei, i 徐振瑋. "Fabrication study of novel UV detector using III-Nitrides thin films". Thesis, 2008. http://ndltd.ncl.edu.tw/handle/70722592946271223780.

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碩士
中原大學
電子工程研究所
96
Recently, the demands of UV detectors for the military, industry and scientific needs have become more and more extensive. The required sensitivity of UV detectors depends on the various applications. UV detectors are traditionally made of photomultiplier tubes (PMTs) and the Si photodiodes. Although PMTs have the highest accuracy, the high price and the fragility prevent it from being widely used for UV sensing. Silicon photodiode is used for its lower cost, but the small band gap results in the inefficiency for UV sensors. The III-Nitrides are suitable for UV sensors application because they possess superior piezoelectricity and wide bandgap as well as radiative attack、low dark current and high responsivity. In this thesis, novel UV detectors were fabricated using III-Nitrides based on AlN/GaN/Sapphire and GaN/Sapphire. The detectors combine a surface acoustic wave (SAW) device and metal-semiconductor-metal (MSM) device. The detectors can be remotely controlled by using RF signals of SAW, and also have the feasibility to distinguish the wavelength range of the incident light through the different bandgaps of AlN and GaN. The results of illuminating experiments demonstrated the possibility of combining two devices to form the new type of UV detectors. The experimental data also revealed that the output frequency shift of the SAW oscillator and the photocurrent of the MSM are both linearly dependent on the radiation power. It indicates the potential to obtain sensitive and accurate UV detectors using this novel III- nitride devices.
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Chen, Tzu-Chieh, i 陳子傑. "Fabricaion study of UV detectors using the opto-electrical and acoustic characteristics of III-nitride thin films". Thesis, 2007. http://ndltd.ncl.edu.tw/handle/47687199427713093513.

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碩士
中原大學
電子工程研究所
95
In this thesis, III-nitride materials, AlN and GaN, which uniquely present at the same time the excellent electronic, optoelectronic and acoustic properties, were employed to fabricate MSM photodetectors & SAW oscillators for UV detection. The dark current of Al/p-GaN MSM photodetector is 10.1pA at 20V, the photoresponsivity is 0.1A/W at 5V, the UV/visible ratio is approximately 2.5 orders, and minimum detectable power is probably 10nW. AlN MSM photodetectors were fabricated on AlN epitaxial thin film deposited on GaN/Sapphire using helicon sputtering system at the low temperature of 300°C. The dark current of the device is 670fA at 20V and photo current illuminated by D2 lamp is higher by one order. The characteristics of SAW devices on AlN/GaN/Sapphire and GaN/Sapphire and the characteristic frequency responded to the UV illumination were explored. Superior SAW properties in terms of insertion loss and sidelobe rejection have been obtained for the SAW devices made on AlN/GaN/Sapphire, compared to those of the ones made on GaN/sapphire. With the deposition AlN on GaN/Sapphire, it can help ease off the fabrication difficulties of SAW oscillators. The illumination effect on the SAW oscillators has been investigated. It showed a linear relationship between the radiation power and the frequency shift of oscillation for GaN/Sapphire and AlN/GaN/Sapphire SAW oscillators, indicating the feasibility for UV sensors. Finally, I have proposed a novel idea of UV detectors that combines the III–Nitrides SAW and MSM devices. The devices not only have the potential to measure optical power more accurately, but also have feasibility of tailoring the UV absorption edge of wavelength. The patent of this invention is pending now.
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Lin, Chung-Yi, i 林忠毅. "Fabrication study of III-Nitride based SAW oscillators and the applications for UV sensors". Thesis, 2007. http://ndltd.ncl.edu.tw/handle/23675493410988057281.

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碩士
中原大學
電子工程研究所
95
High compactness、sensitivity、durability、stability and low power are critical requirements for superior ultraviolet (UV) detectors in the applications of science、chemistry、industry and military, such as space-to-space communication、ozone layer monitoring、missile warning、air pollution detection、flame detection、UV astronomy、medical industry、semiconductor fabrication (lithography) monitoring . In addition to be used in modern communication, the surface acoustic wave (SAW) devices are attractive for highly sensitive and wireless controlled sensors. In the region of UV detectors, nitride-based materials which possess superior piezoelectricity and wide bandgap are suitable to be UV sensors because of their low radiative attack、low dark current and high responsivity. In this thesis, layered structure SAW devices have been prepared on GaN/Sapphire and AlN/GaN/Sapphire. The design and fabrication of the SAW oscillators operating in 165MHz range for UV sensors are described. The stability test of oscillation frequency was less than 2kHz of variation. When SAW oscillators were illuminated by UV light, the oscillation frequency was shifted because of the variation of phase and velocity of the SAW devices, which were caused by the photo-induced conductivity in the piezoelectric layer of SAW devices. The oscillator frequency shift increased with illuminating UV power intensity, indicating that the SAW oscillators made of nitride-based materials were suitable for UV detection.
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Shetty, Arjun. "Device Applications of Epitaxial III-Nitride Semiconductors". Thesis, 2015. http://etd.iisc.ernet.in/2005/3530.

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Through the history of mankind, novel materials have played a key role in techno- logical progress. As we approach the limits of scaling it becomes difficult to squeeze out any more extensions to Moore’s law by just reducing device feature sizes. It is important to look for an alternate semiconductor to silicon in order to continue making the progress predicted by Moore’s law. Among the various semiconductor options being explored world-wide, the III-nitride semiconductor material system has certain unique characteristics that make it one of the leading contenders. We explore the III-nitride semiconductor material system for the unique advantages that it offers over the other alternatives available to us. This thesis studies the device applications of epitaxial III-nitride films and nanos- tructures grown using plasma assisted molecular beam epitaxy (PAMBE) The material characterisation of the PAMBE grown epitaxial III-nitrides was car- ried out using techniques like high resolution X-ray diffraction (HR-XRD), field emis- sion scanning electron microscopy (FESEM), room temperature photoluminescence (PL) and transmission electron microscopy (TEM). The epitaxial III-nitrides were then further processed to fabricate devices like Schottky diodes, photodetectors and surface acoustic wave (SAW) devices. The electrical charcterisation of the fabricated devices was carried out using techniques like Hall measurement, IV and CV measure- ments on a DC probe station and S-parameter measurements on a vector network analyser connected to an RF probe station. We begin our work on Schottky diodes by explaining the motivation for adding an interfacial layer in a metal-semiconductor Schottky contact and how high-k di- electrics like HfO2 have been relatively unexplored in this application. We report the work carried out on the Pt/n-GaN metal-semiconductor (MS) Schottky and the Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) Schottky diode. We report an improvement in the diode parameters like barrier height (0.52 eV to 0.63 eV), ideality factor (2.1 to 1.3) and rectification ratio (35.9 to 98.9 @2V bias) after the introduction of 5 nm of HfO2 as the interfacial layer. Temperature dependent I-V measurements were done to gain a further understanding of the interface. We observe that the barrier height and ideality factor exhibit a temperature dependence. This was attributed to inhomogeneities at the interface and by assuming a Gaussian distribution of barrier heights. UV and IR photodetectors using III-nitrides are then studied. Our work on UV photodetectors describes the growth of epitaxial GaN films. Au nanoparticles were fabricated on these films using thermal evaporation and annealing. Al nanostruc- tures were fabricated using nanosphere lithography. Plasmonic enhancement using these metallic nanostructures was explored by fabricating metal-semiconductor-metal (MSM) photodetectors. We observed plasmonic enhancement of photocurrent in both cases. To obtain greater improvement, we etched down on the GaN film using reac tive ion etching (RIE). This resulted in further increase in photocurrent along with a reduction in dark current which was attributed to creation of new trap states. IR photodetectors studied in this thesis are InN quantum dots whose density can be controlled by varying the indium flux during growth. We observe that increase in InN quantum dot density results in increase in photocurrent and decrease in dark current in the fabricated IR photodetectors. We then explore the advantages that InGaN offers as a material that supports surface acoustic waves and fabricate InGaN based surface acoustic wave devices. We describe the growth of epitaxial In0.23 Ga0.77 N films on GaN template using molecular beam epitaxy. Material characterisation was carried out using HR-XRD, FESEM, PL and TEM. The composition was determined from HR-XRD and PL measurements and both results matched each other. This was followed by the fabrication of interdigited electrodes with finger spacing of 10 µm. S-parameter results showed a transmission peak at 104 MHz with an insertion loss of 19 dB. To the best of our knowledge, this is the first demonstration of an InGaN based SAW device. In summary, this thesis demonstrates the practical advantages of epitaxially grown film and nanostructured III-nitride materials such as GaN, InN and InGaN using plasma assisted molecular beam epitaxy for Schottky diodes, UV and IR photodetec- tors and surface acoustic wave devices.
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Książki na temat "III Nitride UV Detector"

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Zhou, Shengjun, i Sheng Liu. III-Nitride LEDs: From UV to Green. Springer Singapore Pte. Limited, 2022.

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Części książek na temat "III Nitride UV Detector"

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Gaska, R., M. Asif Khan i M. S. Shur. "III-Nitride Based UV Light Emiting Diodes". W UV Solid-State Light Emitters and Detectors, 59–75. Dordrecht: Springer Netherlands, 2004. http://dx.doi.org/10.1007/978-1-4020-2103-9_5.

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Gutmann, Emmanuel, Florian Erfurth, Anke Drewitz, Armin Scheibe i Martina C. Meinke. "UV Fluorescence Detection and Spectroscopy in Chemistry and Life Sciences". W III-Nitride Ultraviolet Emitters, 351–86. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-24100-5_13.

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Čiplys, D., A. Sereika, R. Rimeika, R. Gaska, M. Shur, J. Yang i M. Asif Khan. "III-Nitride Based Ultraviolet Surface Acoustic Wave Sensors". W UV Solid-State Light Emitters and Detectors, 239–46. Dordrecht: Springer Netherlands, 2004. http://dx.doi.org/10.1007/978-1-4020-2103-9_19.

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Yang, Wei. "AlGaN UV Photodetectors". W III-V Nitride Semiconductors, 675–91. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9780367813628-14.

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Monroy, E., F. Calle, E. Muñoz i F. Omnès. "III-Nitride-Based UV Photodetectors". W III-V Nitride Semiconductors, 525–91. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9780367813628-12.

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Juršėnas, S., G. Kurilčik, S. Miasojedovas i A. Žukauskas. "Materials Characterization of Group-III Nitrides under High-Power Photoexcitation". W UV Solid-State Light Emitters and Detectors, 207–14. Dordrecht: Springer Netherlands, 2004. http://dx.doi.org/10.1007/978-1-4020-2103-9_15.

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Degner, Martin, i Hartmut Ewald. "UV Emitters in Gas Sensing Applications". W III-Nitride Ultraviolet Emitters, 321–49. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-24100-5_12.

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Dreyer, Christian, i Franziska Mildner. "Application of LEDs for UV-Curing". W III-Nitride Ultraviolet Emitters, 415–34. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-24100-5_15.

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Wollina, Uwe, Bernd Seme, Armin Scheibe i Emmanuel Gutmann. "Application of UV Emitters in Dermatological Phototherapy". W III-Nitride Ultraviolet Emitters, 293–319. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-24100-5_11.

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Schreiner, Monika, Inga Mewis, Susanne Neugart, Rita Zrenner, Johannes Glaab, Melanie Wiesner i Marcel A. K. Jansen. "UV-B Elicitation of Secondary Plant Metabolites". W III-Nitride Ultraviolet Emitters, 387–414. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-24100-5_14.

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Streszczenia konferencji na temat "III Nitride UV Detector"

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Dupuis, Russell D., Theeradetch Detchprohm, Hi-Hee Ji, Marzieh Bakhtiary-Noodeh, Hoon Jeong, Ping Chen, Shyh-Chiang Shen, Chuan-Wei Tsou, Karan Mehta i P. Douglas Yoder. "III-nitride emitters and detectors for UV optoelectronic applications grown by metalorganic chemical vapor deposition". W UV and Higher Energy Photonics: From Materials to Applications 2019, redaktorzy Gilles Lérondel, Yong-Hoon Cho, Satoshi Kawata i Atsushi Taguchi. SPIE, 2019. http://dx.doi.org/10.1117/12.2540048.

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Wang, Qin, Susan Savage, Sirpa Persson, Bertrand Noharet, Stéphane Junique, Jan Y. Andersson, Vytautas Liuolia i Saulius Marcinkevicius. "Multiple functional UV devices based on III-Nitride quantum wells for biological warfare agent detection". W SPIE OPTO: Integrated Optoelectronic Devices, redaktorzy Hadis Morkoç, Cole W. Litton, Jen-Inn Chyi, Yasushi Nanishi, Joachim Piprek i Euijoon Yoon. SPIE, 2009. http://dx.doi.org/10.1117/12.808469.

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Shatalov, M., J. Yang, Yu Bilenko, M. Shur i R. Gaska. "High Power III-Nitride UV Emitters". W CLEO: Applications and Technology. Washington, D.C.: OSA, 2011. http://dx.doi.org/10.1364/cleo_at.2011.jtud1.

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Wang, George T. "III-Nitride nanowires for UV-visible optoelectronics". W 2015 IEEE Photonics Society Summer Topical Meeting Series (SUM). IEEE, 2015. http://dx.doi.org/10.1109/phosst.2015.7248230.

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Khan, Asif. "III-Nitride UV Emitters and Their Applications". W Conference on Lasers and Electro-Optics. Washington, D.C.: OSA, 2010. http://dx.doi.org/10.1364/cleo.2010.ctucc1.

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Gaska, Remis. "III-Nitride Based Deep UV LEDs and Applications". W International Quantum Electronics Conference. Washington, D.C.: OSA, 2009. http://dx.doi.org/10.1364/iqec.2009.ptua1.

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Gaska, Remis. "III-Nitride Based Deep UV LEDs and Applications". W Conference on Lasers and Electro-Optics. Washington, D.C.: OSA, 2009. http://dx.doi.org/10.1364/cleo.2009.ptua1.

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Xiao-Hang Li, Theeradetch Detchprohm, Russell D. Dupuis, Tsung-Ting Kao, Shyh-Chiang Shen, Md Mahbub Satter, P. Douglas Yoder i in. "III-nitride deep UV laser on sapphire substrate". W 2015 IEEE Photonics Conference (IPC). IEEE, 2015. http://dx.doi.org/10.1109/ipcon.2015.7323746.

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Sarkar, Biplab, Pramod Reddy, Andrew Klump, Robert Rounds, Mathew R. Breckenridge, Brian B. Haidet, Seiji Mita, Ronny Kirste, Ramon Collazo i Zlatko Sitar. "On contacts to III-nitride deep-UV emitters". W 2018 3rd International Conference on Microwave and Photonics (ICMAP). IEEE, 2018. http://dx.doi.org/10.1109/icmap.2018.8354575.

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Shakya, Jagat B., Kyoung Hoon Kim, Tom N. Oder, Jing Yu Lin i Hong Xing Jiang. "III-nitride blue and UV photonic-crystal light-emitting diodes". W Optical Science and Technology, the SPIE 49th Annual Meeting, redaktorzy Ian T. Ferguson, Nadarajah Narendran, Steven P. DenBaars i John C. Carrano. SPIE, 2004. http://dx.doi.org/10.1117/12.565632.

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Raporty organizacyjne na temat "III Nitride UV Detector"

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Moustakas, Theodore D. III-Nitride UV Detector Arrays Fabricated by Combining HVPE Lateral Epitaxial Overgrowth and MBE Methods. Fort Belvoir, VA: Defense Technical Information Center, maj 2002. http://dx.doi.org/10.21236/ada403567.

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Jiang, Hongxing, i Jingyu Lin. UV/Blue III-Nitride Micro-Cavity Photonic Devices. Fort Belvoir, VA: Defense Technical Information Center, marzec 2002. http://dx.doi.org/10.21236/ada399578.

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Jiang, Hongxing, i Jingyu Lin. UV/Blue III-Nitride Micro-Cavity Photonic Devices. Fort Belvoir, VA: Defense Technical Information Center, sierpień 2001. http://dx.doi.org/10.21236/ada390015.

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Jiang, Hongxing, i Jingyu Lin. UV/Blue III-Nitride Micro-Cavity Photonic Devices. Fort Belvoir, VA: Defense Technical Information Center, lipiec 2001. http://dx.doi.org/10.21236/ada390174.

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