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Artykuły w czasopismach na temat „I-III-VI2 semiconductors”

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Data publikacji: 6 września 2023

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1

Matsushita, Hiroaki, Saburo Endo i Taizo Irie. "Thermodynamical Properties of I-III-VI2-Group Chalcopyrite Semiconductors". Japanese Journal of Applied Physics 30, Part 1, No. 6 (15.06.1991): 1181–85. http://dx.doi.org/10.1143/jjap.30.1181.

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2

Xue, D., K. Betzler i H. Hesse. "Dielectric properties of I-III-VI2-type chalcopyrite semiconductors". Physical Review B 62, nr 20 (15.11.2000): 13546–51. http://dx.doi.org/10.1103/physrevb.62.13546.

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3

Başol, Bülent M. "I–III–VI2 compound semiconductors for solar cell applications". Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 10, nr 4 (lipiec 1992): 2006–12. http://dx.doi.org/10.1116/1.578017.

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4

Jakhmola, Priyanka R., Garima Agarwal, Prafulla K. Jha i Satya Prakash Bhatnagar. "Nanorod Formation of Copper Indium (di) Selenide Nanorod Synthesize by Solvothermal Route". Advanced Materials Research 1047 (październik 2014): 107–11. http://dx.doi.org/10.4028/www.scientific.net/amr.1047.107.

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The compound belongs to I-III-VI2 group are promising material as an effective light-absorbing materials. Now a day, ternary chalcopyrite semiconductors, especially copper based I-III-VI2 semiconductors have attracted many investigators. They have several desirable features as absorbers in the thin film solar cells. In present work, copper indium (di) selenide have been prepared via solvothermal route. Several methods have been reported to prepare CuInSe2 nanostructures by solution route. In present work, tetragonal chalcopyrite copper indium (di) selenide nanorods has been synthesized by solvothermal method using ethylene diamine as a solvent. Structural analysis had been done by X-ray diffraction (XRD). The surface morphology of the as-grown nanorod has been studied using scanning electron microscopy. The bandgap of as grown nanorods is obtained from UV-Vis spectrum which will applicable to the solar cell devices.
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5

Balakrishnan, K., B. Vengatesan i P. Ramasamy. "Growth and characterization of some I–III–VI2 compound semiconductors". Journal of Materials Science 29, nr 7 (kwiecień 1994): 1879–83. http://dx.doi.org/10.1007/bf00351308.

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6

Omer, Mustafa S., Hameed M. Ahmad i Suran M. Mamand. "Temperature Dependence of Lattice Thermal Conductivity for some I-III-VI2 Group Compound Semiconductors". Journal of Zankoy Sulaimani - Part A 7, nr 1 (20.08.2003): 7–15. http://dx.doi.org/10.17656/jzs.10117.

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7

Ueng, H. Y., i H. L. Hwang. "Defect structure of non-stoichiometric Cu-I-III-VI2 chalcopyrite semiconductors". Materials Science and Engineering: B 12, nr 3 (luty 1992): 261–67. http://dx.doi.org/10.1016/0921-5107(92)90297-m.

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8

Nomura, Shigetaka, Saburo Endo i Taizo Irie. "Method of materials design for I-III-VI2 chalcopyrite-type mixed crystal semiconductors". Electronics and Communications in Japan (Part II: Electronics) 71, nr 4 (1988): 101–13. http://dx.doi.org/10.1002/ecjb.4420710412.

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9

Ohmer, Melvin C., i Ravindra Pandey. "Emergence of Chalcopyrites as Nonlinear Optical Materials". MRS Bulletin 23, nr 7 (lipiec 1998): 16–22. http://dx.doi.org/10.1557/s0883769400029031.

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Chalcopyrite nonlinear optical (NLO) semiconductors are presently enjoying a major renaissance. This rebirth of interest is due primarily to the success of recent materials research-and-development (R&D) programs that have dramatically improved the availability of large crackfree high-quality crystals. This overview provides a general review of chalcopyrites, of their application in laser systems that exploit second-harmonic generation (SHG) or optical parametric oscillation (OPO), and of the materials-selection criteria for laser crystals to assist in focusing R&D efforts. It also suggests broader application areas. The overview concludes with a number of specific recommendations for further R&D efforts to advance this materials technology.The archetype infrared NLO chalcopyrites are AgGaSe2 (a I-III-VI2 semiconductor) and ZnGeP2 (a II-IV-V2 semiconductor). Using samples of naturally occurring pyrites, Pauling correctly established the chalcopyrite's crystal structure (diamondlike where Zn and Ge cations are ordered) in 1932 after two previous false starts by others. Levine, who has extensively studied the nonlinear susceptibilities of a number of bond types, stated in 1973 that the chalcopyrite structure is so favorable for NLO properties that it will be difficult to ever find materials with larger nonlinearities in the infrared spectral region. That statement has proved to be prophetic.Goodman of Great Britain first reported that chalcopyrites were semiconductors. However the first observation that these materials were semiconductors is generally attributed to A.F. Ioffe and N. A. Goryunova of the A.F. Ioffe Physico-Technical Institute (IPT) in St Petersburg, Russia.
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10

John, Rita. "Band Gap Engineering in Bulk and Nano Semiconductors". MRS Proceedings 1454 (2012): 233–38. http://dx.doi.org/10.1557/opl.2012.1445.

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ABSTRACTThe changes are brought in the elemental semiconductors Si and Ge by replacing them with II-VI and III-V binary analogs or their ternary analogs I-III-VI2 chalcopyrides and II-IV-V2 pnictides respectively. Such compounds exhibit transitions from their parent compound in terms of nature of band gaps (Eg) as indirect to direct in addition to the changes in the values of the Eg. These changes have direct consequence in their optical properties with degenerate states being lifted leading to crystal field splitting and so on. The Eg in ternary bulk semiconducting materials is engineered as a function of certain structural parameters such as anion position parameter (u), tetragonal compression parameter (η) through effective alloying. The contributions to Eg due to these effects are studied as band gap anomalies. The present paper discusses the results of the band gap engineering in some of the bulk ABC2(A= Cd; B=Si,Ge,Sn; C= P,As) semiconductors using theoretical methods. The influence of each of A, B and C atom is also discussed. The dependence of morphology of nano semiconducting particles and the band gap on the chemical environment, temperature is reported by us. The confinement energy of a compound which is the difference in energy between the bulk and nano forms is investigated.
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11

Zhao, Yu-Jun, Priya Mahadevan i Alex Zunger. "Comparison of predicted ferromagnetic tendencies of Mn substituting the Ga site in III–V’s and in I–III–VI2 chalcopyrite semiconductors". Applied Physics Letters 84, nr 19 (10.05.2004): 3753–55. http://dx.doi.org/10.1063/1.1737466.

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12

Essaleh, Mohamed, Rachid Bouferra, Soufiane Belhouideg, Mohamed Oubani, Abdeltif Bouchehma i Mohamed Benjelloun. "Electrical characterisation and analysis of dominant contributions in disordered semiconducting systems with an application to the pure bentonite material for civil engineering applications". EUREKA: Physics and Engineering, nr 6 (29.11.2022): 164–74. http://dx.doi.org/10.21303/2461-4262.2022.002628.

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Semiconductors and clay materials have significant applications in environmental, civil engineering and optoelectronic sectors. The application of an electric field to such systems is subject of many works. However, to understand the behaviour of such materials under the influence of an electric field, the perception of its electrical properties is essential. In the present study, the powerful technique of complex impedance spectroscopy (CIS) is introduced to illustrate the electrical characteristics of two types of disordered semiconducting materials. These are Cu5In9Se16, an ordered defect compound of the I-III-VI2 family and a novel bentonite clay system which is an insulator at room temperature and semiconductor above 400 °C. Na-bentonite has been studied extensively because of its strong adsorption capacity and complexation ability while Cu5In9Se16 is considered for its use in solar and phtovoltaique domain. Some of selenides have turned out to be leading materials for electro-optical devices and the tellurides for thermoelectric power generation. It is very likely that study of bentonite clay and other similar materials may lead to the technology of heterojunction and clay composite. The frequency dependence of conductivity of bentonite was investigated using an impedance analyzer in the frequency range (20 Hz–1 MHz). The experimental data of CIS are analyzed using some analytical methods that take into account the effect of the grains and grain boundaries. The impedance data confirm the non-Debye behavior in these systems. Some important parameters related to the identified dominant contribution such as relaxation time and activation energies are estimated for the studied materials in the considered temperature and frequency ranges
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13

Wang, Dingsheng, Wen Zheng, Chenhui Hao, Qing Peng i Yadong Li. "General synthesis of I–III–VI2 ternary semiconductor nanocrystals". Chemical Communications, nr 22 (2008): 2556. http://dx.doi.org/10.1039/b800726h.

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14

Omata, Takahisa, Katsuhiro Nose i Shinya Otsuka-Yao-Matsuo. "Size dependent optical band gap of ternary I-III-VI2 semiconductor nanocrystals". Journal of Applied Physics 105, nr 7 (kwiecień 2009): 073106. http://dx.doi.org/10.1063/1.3103768.

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15

ZHAO, GUANGPING, i BINGJIE YU. "THEORETICAL STUDIES ON BOND PROPERTIES AND HARDNESS OF ABC2(A = Zn, Cd, Cu, Ag; B = Si, Ge, Sn; C = P, As, S, Se, Te) SEMICONDUCTOR WITH CHALCOPYRITES STRUCTURE". International Journal of Modern Physics B 26, nr 09 (10.04.2012): 1250067. http://dx.doi.org/10.1142/s0217979212500671.

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The chemical bond parameters of II–IV–V2 and I–III–VI2 compounds have calculated using the chemical bond theory of complex crystals. Their hardnesses have been predicted by the chemical bond definition of hardness. The calculated results are in agreement with their experimental values. The calculation of hardness indicates that all of compounds possess good mechanical properties.
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16

Torimoto, Tsukasa, Seiya Koyama, Tatsuya Kameyama i Susumu Kuwabata. "(Invited) Preparation of Dumbbell-Shaped Nanocrystals Composed of ZnS-AgInS2 Solid Solution and Their Photocatalytic H2 Evolution Activity". ECS Meeting Abstracts MA2018-01, nr 31 (13.04.2018): 1886. http://dx.doi.org/10.1149/ma2018-01/31/1886.

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I-III-VI2 ternary semiconductor nanocrystals, such as CuInS2 and AgInS2, exhibiting the quantum size effect have attracted much attention for the application to solar energy conversion systems because of their strong absorption coefficient and low toxicity. The optical properties of these particles are tunable by controlling the particle size. Recently we have successfully prepared anisotropic-shaped nanocrystals of ZnS-AgInS2 solid solution ((AgIn)xZn2(1-x)S2, ZAIS). Their photocatalytic H2 evolution activity could be controlled by the chemical composition as well as by the particle size,(1) and increased with particle morphology in the order of rice < sphere < rod.(2) On the other hand, the formation of type II heterojunction between different semiconductors was reported to be another strategy to enhance the photocatalytic activity of composite particles due to the effective charge separation of photogenerated electrons and holes at the heterojunction. In this study, we synthesize dumbbell-shaped nanocrystals composed of ZnS-AgInS2 solid solution (ZAIS) via epitaxial crystal growth in the solution phase, in which the heterojunction forms between rod- and rice-shaped parts in the nanocrystals. The photocatalytic activity of resulting nanocrystals is investigated for H2 evolution as a model reaction. Rod-shaped ZAIS nanocrystals with sizes of 4.1 × 23 nm as a precursor were prepared by the previously reported method.(2) These nanocrystals were heat-treated at 170 °C for 8 min in an oleylamine/1-dodecanethiol mixture solution containing AgCH3COO, In(CH3COO)3, and thiourea. Thus-obtained mixture nanocrystals were isolated from the resulting solution by adding methanol as a non-solvent. Dumbbell-shaped nanocrystals were separated from rice-shaped ones as a by-product with use of a size-selective precipitation technique. The photocatalytic activity for H2 evolution was investigated by the irradiation of dumbbell- and rice-shaped ZAIS nanocrystals in a mixture solution of water/2-propanol (1:1) containing Na2S as a hole scavenger with a Xe lamp (λ > 350 nm). The XRD analysis revealed that these ZAIS particles had a wurtzite crystal structure. With TEM measurements, we found that rice-shaped crystals with sizes of 5.6 × 11 nm were epitaxially grown on both the tips of rod-shaped ZAIS nanocrystals, resulting in the formation of dumbbell-shaped nanocrystals. The energy gap of dumbbell-shaped nanocrystals was determined to 1.9 eV from the absorption onset, being equal to that of freely dispersed nanocrystals with rice shape but lower than that of original rod-shaped ones, 2.8 eV. These suggested that the Zn content in rod-shaped parts of dumbbell-shaped nanocrystals was higher than that in rice-shaped parts of the same particles. By estimating the electronic energy structure of dumbbell-shaped ZAIS nanocrystals from those of corresponding rod- and rice-shaped nanocrystals, the heterojunction of type II structure was expected to form at the interface between rod- and rice-shaped parts in a dumbbell nanocrystal. ZAIS nanocrystals were dispersed in water/2-propanol solution and irradiated with a Xe lamp light. The H2 evolution was observed, the amount of which increased linearly with elapse of irradiation time. The H2 evolution rate of dumbbell nanocrystals was about four times larger than that of rice-shaped ones. These results indicated that the ZAIS nanocrystals worked as a photocatalyst and then the type II heterojunction in dumbbell-shaped nanocrystals induced the effective charge separation of photogenerated electrons and holes. Reference (1) T. Torimoto et al., J. Phys. Chem. C., 2015, 119, 24740-24749. (2) T. Torimoto et al., ACS Appl. Mater. Interfaces 2016 , 8, 27151-27161.
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17

Berends, Anne C., Mark J. J. Mangnus, Chenghui Xia, Freddy T. Rabouw i Celso de Mello Donega. "Optoelectronic Properties of Ternary I–III–VI2 Semiconductor Nanocrystals: Bright Prospects with Elusive Origins". Journal of Physical Chemistry Letters 10, nr 7 (18.03.2019): 1600–1616. http://dx.doi.org/10.1021/acs.jpclett.8b03653.

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18

Regulacio, Michelle D., i Ming-Yong Han. "Multinary I-III-VI2 and I2-II-IV-VI4 Semiconductor Nanostructures for Photocatalytic Applications". Accounts of Chemical Research 49, nr 3 (11.02.2016): 511–19. http://dx.doi.org/10.1021/acs.accounts.5b00535.

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19

Nagatani, Hiraku, Issei Suzuki, Masao Kita, Masahiko Tanaka, Yoshio Katsuya, Osami Sakata i Takahisa Omata. "Structure of β-AgGaO2; ternary I–III–VI2 oxide semiconductor with a wurtzite-derived structure". Journal of Solid State Chemistry 222 (luty 2015): 66–70. http://dx.doi.org/10.1016/j.jssc.2014.11.012.

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20

Loferski, Joseph J. "Stoichiometric effects on the properties of copper based chalcopyrite I–III–VI2 semiconductor thin films". Materials Science and Engineering: B 13, nr 4 (kwiecień 1992): 271–77. http://dx.doi.org/10.1016/0921-5107(92)90127-u.

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21

Abdel-Salam, A. I., M. Mohsen Abdelaziz, A. N. Emam, A. S. Mansour, A. A. F. Zikry, M. B. Mohamed i Y. H. Elbashar. "Anisotropic CuInSe2 nanocrystals: synthesis, optical properties and their effect on photoelectric response of dye-sensitized solar cell". Revista Mexicana de Física 66, nr 1 (28.12.2019): 14. http://dx.doi.org/10.31349/revmexfis.66.14.

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CuInSe2 I–III–VI2 ternary semiconductor considered as one of the most promising semiconductor material which considers a very efficient solar energy conversion material. An organometallic pyrolysis method is used to prepare monodisperse CuInSe2 nanoparticles using a mixture of oleylamine, and trioctylphosphine (TOP) as capping materials. Controlling the particle shape dot, rods or flowers occurs via varying the reaction temperatures (160, 200, 220°C) respectively. The obtained particles have been characterized to determine the shape and size of CuInSe2 nanoparticles using HR-TEM and XRD. The optical and the electronic properties of these particles have been investigated and discussed in details. Then the different shapes of CIS nanoparticles (nanodots, nanorods, and nanoflowers) were introduced to the DSSC to study their effect on the optical switching properties. It was found that the nanoflowers provide better photovoltaic performance than the other shapes; since it reduces the settling time to 50 milliseconds after it was more than 17 second before adding CIS nanoparticles to the cells.
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22

Huang, Bo, i Huichao Zhang. "Synthesis of CuInS2/ZnS Nanocrystals with Thick Shell: The Effect of Temperature and Sulfur Precursor". Nano 16, nr 07 (7.06.2021): 2150074. http://dx.doi.org/10.1142/s1793292021500740.

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As heavy-metal-free alternatives to Cd- and Pb-containing semiconductor nanocrystals (NCs), ternary I–III–VI2 compounds NCs have been actively studied, especially the CuInS2 NCs. Recently, it has been found that thick ZnS shelling can greatly improve the photochemical stability of such NCs, which undoubtedly enhances their application potential although it is still limited by the development of synthetic methods. This paper provides a facile method for preparation of thick-shell CuInS2/ZnS NCs. The effects of reaction temperatures ([Formula: see text]C and [Formula: see text]C) and sulfur precursors (dodecanethiol and sulfur powder) on the shell overgrowth are discussed in detail. When low reaction temperature ([Formula: see text]C) and inactive sulfur precursor are used, the overgrowth of ZnS shell is considerably slow and raising temperature have a limited impact on the particles’ size. On the contrary, high reaction temperature and reactive sulfur precursor can effectively improve the overgrowth rate of ZnS shell, and then thick-shell CuInS2/ZnS NCs can be received. Furthermore, a high-speed centrifugation method is used to screen out product NCs with a relatively uniform size.
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23

Bachmann, Klaus J. "Lattice-Matched Heteroepitaxy of Wide Gap Ternary Compound Semiconductors". MRS Proceedings 242 (1992). http://dx.doi.org/10.1557/proc-242-707.

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ABSTRACTA variety of applications are identified for heteroepitaxial structures of wide gap I-III-VI2 and II-IV-V2 semiconductors, and are assessed in comparison with ternary III-V alloys and other wide gap materials. Non-linear optical applications of the I-III-VI2 and II-IV-V2 compound heterostructures are discussed, which require the growth of thick epitaxial layers imposing stringent requirements on the conditions of heteroepitaxy. In particular, recent results concerning the MOCVD growth of ZnSixGe1-xP2 alloys lattice-matching Si or GaP substrates are reviewed. Also, heterostructures of CuzAg1-zGaS2 alloys that lattice-match Si, Ge, GaP or GaAs substrates are considered in the context of optoelectronic devices operating in the blue wavelength regime. Since under the conditions of MOCVD, metastable alloys of the II-IV-V2 compounds and group IV elements are realized, II-IV-V2 alloys may also serve as interlayers in the integration of silicon and germanium with exactly lattice-matched tetrahedrally coordinated compound semiconductors, e.g. ZnSixGe1-xP2.
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24

Beloš, Milica V., Nadica D. Abazović, Jadranka Kuljanin Jakovljević, Ivana Janković, Scott P. Ahrenkiel, Miodrag Mitrić i Mirjana I. Čomor. "Influence of sulphide precursor on crystal phase of ternary I–III–VI2 semiconductors". Journal of Nanoparticle Research 15, nr 12 (30.11.2013). http://dx.doi.org/10.1007/s11051-013-2148-6.

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25

Rashkeev, Sergey N., i Walter R. L. Lambrecht. "First-Principles Calculations of Nonlinear Optical Response Functions in Semiconductors". MRS Proceedings 579 (1999). http://dx.doi.org/10.1557/proc-579-137.

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ABSTRACTWe present our implementation of the length-gauge formalism of Sipe and coworkers (Phys. Rev. B 48, 11705 (1993); ibid 52, 14636 (1995)) using the linearized muffin-tin orbital (LMTO) method and discuss its application to the calculation of second order response functions. The importance of gap corrections beyond LDA is discussed. As primary application, we discuss the second harmonic generation (SHG) coefficients of the SiC polytypes and of the chalcopyrites of both the II-IV-V2 and I-III-VI2 families. These examples illustrate the relation of the second order response function to the modification of the crystal structure and chemical substitutions.
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26

Kelliher, James T., i Klaus J. Bachmann. "Phase Relations and Bulk Crystal Growth in the System CuInTe2-MnIn2Te4". MRS Proceedings 216 (1990). http://dx.doi.org/10.1557/proc-216-479.

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ABSTRACTRecently manganese substituted I-III-VI2 compounds have been investigated. Their magnetic properties are similar to the paramagnetic transistion metal ion substituted II-VI materials, but their crystal structure is non-cubic resulting in anisotropies in their physico-chemical properties that do not exist in the zincblende structure diluted magnetic semiconductors (DMS) materials. In this paper, we report the phase relations on the pseudobinary cut CuInTe2-MnIn2Te4 based on x-ray diffraction and differential thermal analysis data. The range of chalcopyrite structure alloys of composition Cu1−xMnx□xIn2Te4 is limited to x<0.52 due to an eutectic at x=0.74, T= 734°C. A second eutectic exists at x = 0.97, T = 737.5°C. A heretofore unknown congruently melting compound exists in between the two eutectics at x= 0.85, Tm = 760°C. Also, the thus far unknown melting point of the compound MnIn2Te4 was determined (740°C ). Based on the analyses of the first to freeze parts of directionally solidified melts in this range of liquidus compositions by inductively coupled plasma emission spectroscopy the solidus is constructed.
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Dehnel, Joanna, Adi Harchol, Yahel Barak, Itay Meir, Faris Horani, Arthur Shapiro, Rotem Strassberg i in. "Optically detected magnetic resonance spectroscopic analyses on the role of magnetic ions in colloidal nanocrystals". Journal of Chemical Physics 159, nr 7 (15.08.2023). http://dx.doi.org/10.1063/5.0160787.

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Incorporating magnetic ions into semiconductor nanocrystals has emerged as a prominent research field for manipulating spin-related properties. The magnetic ions within the host semiconductor experience spin-exchange interactions with photogenerated carriers and are often involved in the recombination routes, stimulating special magneto-optical effects. The current account presents a comparative study, emphasizing the impact of engineering nanostructures and selecting magnetic ions in shaping carrier–magnetic ion interactions. Various host materials, including the II–VI group, halide perovskites, and I–III–VI2 in diverse structural configurations such as core/shell quantum dots, seeded nanorods, and nanoplatelets, incorporated with magnetic ions such as Mn2+, Ni2+, and Cu1+/2+ are highlighted. These materials have recently been investigated by us using state-of-the-art steady-state and transient optically detected magnetic resonance (ODMR) spectroscopy to explore individual spin-dynamics between the photogenerated carriers and magnetic ions and their dependence on morphology, location, crystal composition, and type of the magnetic ion. The information extracted from the analyses of the ODMR spectra in those studies exposes fundamental physical parameters, such as g-factors, exchange coupling constants, and hyperfine interactions, together providing insights into the nature of the carrier (electron, hole, dopant), its local surroundings (isotropic/anisotropic), and spin dynamics. The findings illuminate the importance of ODMR spectroscopy in advancing our understanding of the role of magnetic ions in semiconductor nanocrystals and offer valuable knowledge for designing magnetic materials intended for various spin-related technologies.
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