Artykuły w czasopismach na temat „Hydrogen resist”
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Horibe, Hideo, Masashi Yamamoto, Eiji Kusano, Tomokazu Ichikawa i Seiichi Tagawa. "Resist Removal by using Atomic Hydrogen". Journal of Photopolymer Science and Technology 21, nr 2 (2008): 293–98. http://dx.doi.org/10.2494/photopolymer.21.293.
Pełny tekst źródłaHoribe, H., M. Yamamoto, T. Maruoka, Y. Goto, A. Kono, I. Nishiyama i S. Tagawa. "Ion-implanted resist removal using atomic hydrogen". Thin Solid Films 519, nr 14 (maj 2011): 4578–81. http://dx.doi.org/10.1016/j.tsf.2011.01.287.
Pełny tekst źródłaRommel, Marcus, i Jürgen Weis. "Hydrogen silsesquioxane bilayer resists—Combining high resolution electron beam lithography and gentle resist removal". Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 31, nr 6 (listopad 2013): 06F102. http://dx.doi.org/10.1116/1.4822136.
Pełny tekst źródłaTsubouchi, Kazuo, Kazuya Masu i Keiichi Sasaki. "Area-Selective Aluminum Patterning Using Atomic Hydrogen Resist". Japanese Journal of Applied Physics 32, Part 1, No. 1B (30.01.1993): 278–81. http://dx.doi.org/10.1143/jjap.32.278.
Pełny tekst źródłaManfrinato, Vitor R., Lin Lee Cheong, Huigao Duan, Donald Winston, Henry I. Smith i Karl K. Berggren. "Sub-5keV electron-beam lithography in hydrogen silsesquioxane resist". Microelectronic Engineering 88, nr 10 (październik 2011): 3070–74. http://dx.doi.org/10.1016/j.mee.2011.05.024.
Pełny tekst źródłaWinston, D., B. M. Cord, B. Ming, D. C. Bell, W. F. DiNatale, L. A. Stern, A. E. Vladar i in. "Scanning-helium-ion-beam lithography with hydrogen silsesquioxane resist". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 27, nr 6 (2009): 2702. http://dx.doi.org/10.1116/1.3250204.
Pełny tekst źródłaMaruoka, Takeshi, Yousuke Goto, Masashi Yamamoto, Hideo Horibe, Eiji Kusano, Kazuhisa Takao i Seiichi Tagawa. "Relationship between the Thermal Hardening of Ion-Implanted Resist and the Resist Removal Using Atomic Hydrogen". Journal of Photopolymer Science and Technology 22, nr 3 (2009): 325–28. http://dx.doi.org/10.2494/photopolymer.22.325.
Pełny tekst źródłaRamjaun, T. I., S. W. Ooi, R. Morana i H. K. D. H. Bhadeshia. "Designing steel to resist hydrogen embrittlement: Part 1 – trapping capacity". Materials Science and Technology 34, nr 14 (13.07.2018): 1737–46. http://dx.doi.org/10.1080/02670836.2018.1475919.
Pełny tekst źródłaOoi, S. W., T. I. Ramjaun, C. Hulme-Smith, R. Morana, M. Drakopoulos i H. K. D. H. Bhadeshia. "Designing steel to resist hydrogen embrittlement Part 2 – precipitate characterisation". Materials Science and Technology 34, nr 14 (13.07.2018): 1747–58. http://dx.doi.org/10.1080/02670836.2018.1496536.
Pełny tekst źródłaKomori, Takuya, Hui Zhang, Takashi Akahane, Zulfakri bin Mohamad, You Yin i Sumio Hosaka. "Effect of Salty Development on Forming HSQ Resist Nanodot Arrays with a Pitch of 15×15 nm2 by 30-keV Electron Beam Lithography". Key Engineering Materials 534 (styczeń 2013): 113–17. http://dx.doi.org/10.4028/www.scientific.net/kem.534.113.
Pełny tekst źródłaWhitfield, Dennis M., Stephen P. Douglas, Ting-Hua Tang, Imre G. Csizmadia, Henrianna Y. S. Pang, Frederick L. Moolten i Jiri J. Krepinsky. "Differential reactivity of carbohydrate hydroxyls in glycosylations. II. The likely role of intramolecular hydrogen bonding on glycosylation reactions. Galactosylation of nucleoside 5′-hydroxyls for the syntheses of novel potential anticancer agents". Canadian Journal of Chemistry 72, nr 11 (1.11.1994): 2225–38. http://dx.doi.org/10.1139/v94-284.
Pełny tekst źródłaNagai, Tatsuo, Haruyoshi Yamakawa, Minoru Uchida, Toru Otsu, Norihito Ikemiya i Hiroshi Morita. "Study on Resist Removal Using Electrolyzed Sulfuric Acid Solution in Comparison with SPM". Solid State Phenomena 187 (kwiecień 2012): 109–12. http://dx.doi.org/10.4028/www.scientific.net/ssp.187.109.
Pełny tekst źródłaNamatsu, H., T. Yamaguchi, M. Nagase, K. Yamazaki i K. Kurihara. "Nano-patterning of a hydrogen silsesquioxane resist with reduced linewidth fluctuations". Microelectronic Engineering 41-42 (marzec 1998): 331–34. http://dx.doi.org/10.1016/s0167-9317(98)00076-8.
Pełny tekst źródłaPascher, Nikola, Szymon Hennel, Susanne Mueller i Andreas Fuhrer. "Tunnel barrier design in donor nanostructures defined by hydrogen-resist lithography". New Journal of Physics 18, nr 8 (28.07.2016): 083001. http://dx.doi.org/10.1088/1367-2630/18/8/083001.
Pełny tekst źródłaJin, Niu, Sookyung Choi, Liang Wang, Guang Chen, DongHyun Kim, Vipan Kumar i Ilesanmi Adesida. "Nanometer-scale gaps in hydrogen silsesquioxane resist for T-gate fabrication". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 25, nr 6 (2007): 2081. http://dx.doi.org/10.1116/1.2798734.
Pełny tekst źródłaMitsui, Toshiyuki, Eric Hill i Eric Ganz. "Nanolithography by selective chemical vapor deposition with an atomic hydrogen resist". Journal of Applied Physics 85, nr 1 (styczeń 1999): 522–24. http://dx.doi.org/10.1063/1.369483.
Pełny tekst źródłaSaleem, Muhammad Rizwan. "Hydrogen silsesquioxane resist stamp for replication of nanophotonic components in polymers". Journal of Micro/Nanolithography, MEMS, and MOEMS 11, nr 1 (2.03.2012): 013007. http://dx.doi.org/10.1117/1.jmm.11.1.013007.
Pełny tekst źródłaDinh, Cong Que, Akihiro Oshima i Seiichi Tagawa. "Depth Dependence of Time Delay Effect on Hydrogen Silsesquioxane (HSQ) Resist Layers". Journal of Photopolymer Science and Technology 25, nr 1 (2012): 121–24. http://dx.doi.org/10.2494/photopolymer.25.121.
Pełny tekst źródłaGeorgiev, Y. M., W. Henschel, A. Fuchs i H. Kurz. "Surface roughness of hydrogen silsesquioxane as a negative tone electron beam resist". Vacuum 77, nr 2 (styczeń 2005): 117–23. http://dx.doi.org/10.1016/j.vacuum.2004.07.080.
Pełny tekst źródłaMatsubara, Yasushi, Jun Taniguchi i Iwao Miyamoto. "Fabrication of Three-Dimensional Hydrogen Silsesquioxane Resist Structure using Electron Beam Lithography". Japanese Journal of Applied Physics 45, nr 6B (20.06.2006): 5538–41. http://dx.doi.org/10.1143/jjap.45.5538.
Pełny tekst źródłaYang, Fan, David K. Taggart i Reginald M. Penner. "Fast, Sensitive Hydrogen Gas Detection Using Single Palladium Nanowires That Resist Fracture". Nano Letters 9, nr 5 (13.05.2009): 2177–82. http://dx.doi.org/10.1021/nl9008474.
Pełny tekst źródłaVila-Comamala, Joan, Sergey Gorelick, Vitaliy A. Guzenko i Christian David. "3D Nanostructuring of hydrogen silsesquioxane resist by 100 keV electron beam lithography". Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 29, nr 6 (listopad 2011): 06F301. http://dx.doi.org/10.1116/1.3629811.
Pełny tekst źródłaMasu, Kazuya. "Atomic hydrogen resist process with electron beam lithography for selective Al patterning". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 12, nr 6 (listopad 1994): 3270. http://dx.doi.org/10.1116/1.587610.
Pełny tekst źródłaKato, T., J. Kamijo, T. Nakamura, C. Ohata, S. Katsumoto i J. Haruyama. "Spin phase protection in interference of electron spin waves in lightly hydrogenated graphene". RSC Advances 6, nr 72 (2016): 67586–91. http://dx.doi.org/10.1039/c6ra11648e.
Pełny tekst źródłaYamasaki, S., i H. K. D. H. Bhadeshia. "M 4 C 3 precipitation in Fe–C–Mo–V steels and relationship to hydrogen trapping". Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences 462, nr 2072 (8.03.2006): 2315–30. http://dx.doi.org/10.1098/rspa.2006.1688.
Pełny tekst źródłaYang, Joel K. W., Bryan Cord, Huigao Duan, Karl K. Berggren, Joseph Klingfus, Sung-Wook Nam, Ki-Bum Kim i Michael J. Rooks. "Understanding of hydrogen silsesquioxane electron resist for sub-5-nm-half-pitch lithography". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 27, nr 6 (2009): 2622. http://dx.doi.org/10.1116/1.3253652.
Pełny tekst źródłaSidorkin, Vadim, Emile van der Drift i Huub Salemink. "Influence of hydrogen silsesquioxane resist exposure temperature on ultrahigh resolution electron beam lithography". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 26, nr 6 (listopad 2008): 2049–53. http://dx.doi.org/10.1116/1.2987965.
Pełny tekst źródłavan Delft, Falco C. M. J. M., Jos P. Weterings, Anja K. van Langen-Suurling i Hans Romijn. "Hydrogen silsesquioxane/novolak bilayer resist for high aspect ratio nanoscale electron-beam lithography". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 18, nr 6 (2000): 3419. http://dx.doi.org/10.1116/1.1319682.
Pełny tekst źródłaJunarsa, Ivan, Mark P. Stoykovich, Paul F. Nealey, Yuansheng Ma, Franco Cerrina i Harun H. Solak. "Hydrogen silsesquioxane as a high resolution negative-tone resist for extreme ultraviolet lithography". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 23, nr 1 (2005): 138. http://dx.doi.org/10.1116/1.1849213.
Pełny tekst źródłaYoshimura, Toshiyuki, Akira Ishikawa, Hiroshi Okamoto, Hiroshi Miyazaki, Akemi Sawada, Takuma Tanimoto i Shinji Okazaki. "Direct delineation of fine metallic patterns through hydrogen reduction of inorganic resist HPA". Microelectronic Engineering 13, nr 1-4 (marzec 1991): 97–100. http://dx.doi.org/10.1016/0167-9317(91)90056-j.
Pełny tekst źródłavan Kan, J. A., A. A. Bettiol i F. Watt. "Hydrogen silsesquioxane a next generation resist for proton beam writing at the 20nm level". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 260, nr 1 (lipiec 2007): 396–99. http://dx.doi.org/10.1016/j.nimb.2007.02.051.
Pełny tekst źródłaJamieson, Andrew. "Low-voltage electron beam lithography resist processes: top surface imaging and hydrogen silisesquioxane bilayer". Journal of Micro/Nanolithography, MEMS, and MOEMS 3, nr 3 (1.07.2004): 442. http://dx.doi.org/10.1117/1.1758268.
Pełny tekst źródłaShen, Jiashi, Ferhat Aydinoglu, Mohammad Soltani i Bo Cui. "E-beam lithography using dry powder resist of hydrogen silsesquioxane having long shelf life". Journal of Vacuum Science & Technology B 37, nr 2 (marzec 2019): 021601. http://dx.doi.org/10.1116/1.5079657.
Pełny tekst źródłaWestly, Daron A., Donald M. Tennant, Yukinori Aida, Hirofumi Ohki i Takashi Ohkubo. "Improved time dependent performance of hydrogen silsesquioxane resist using a spin on top coat". Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 29, nr 6 (listopad 2011): 06FJ02. http://dx.doi.org/10.1116/1.3660788.
Pełny tekst źródłaLee, Hyo-Sung, Jung-Sub Wi, Sung-Wook Nam, Hyun-Mi Kim i Ki-Bum Kim. "Two-step resist-development process of hydrogen silsesquioxane for high-density electron-beam nanopatterning". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 27, nr 1 (2009): 188. http://dx.doi.org/10.1116/1.3049482.
Pełny tekst źródłaYoshimura, Toshiyuki, Akira Ishikawa, Hiroshi Okamoto, Hiroshi Miyazaki, Akemi Sawada, Takuma Tanimoto i Shinji Okazaki. "Direct delineation of fine metallic patterns through hydrogen reduction of the inorganic resist HPA". Microelectronic Engineering 14, nr 3-4 (wrzesień 1991): 149–58. http://dx.doi.org/10.1016/0167-9317(91)90001-t.
Pełny tekst źródłaYin, You, Taichi Itagawa i Sumio Hosaka. "Electron Beam Lithography for Fabrication of Nanophase-Change Memory". Applied Mechanics and Materials 481 (grudzień 2013): 30–35. http://dx.doi.org/10.4028/www.scientific.net/amm.481.30.
Pełny tekst źródłaSolard, Jeanne, Mahmoud Chakaroun i Azzedine Boudrioua. "Optimal design and fabrication of ITO photonic crystal using e-beam patterned hydrogen silsesquioxane resist". Journal of Vacuum Science & Technology B 38, nr 2 (marzec 2020): 022802. http://dx.doi.org/10.1116/1.5142533.
Pełny tekst źródłaMitsui, Toshiyuki, Rob Curtis i Eric Ganz. "Selective nanoscale growth of titanium on the Si(001) surface using an atomic hydrogen resist". Journal of Applied Physics 86, nr 3 (sierpień 1999): 1676–79. http://dx.doi.org/10.1063/1.370946.
Pełny tekst źródłaChoi, Sookyung, Minjun Yan, Ilesanmi Adesida, Keng H. Hsu i Nicholas X. Fang. "Ultradense gold nanostructures fabricated using hydrogen silsesquioxane resist and applications for surface-enhanced Raman spectroscopy". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 27, nr 6 (2009): 2640. http://dx.doi.org/10.1116/1.3253610.
Pełny tekst źródłaKüpper, Daniel, David Küpper, Thorsten Wahlbrink, Wolfgang Henschel, Jens Bolten, Max C. Lemme, Yordan M. Georgiev i Heinrich Kurz. "Impact of supercritical CO[sub 2] drying on roughness of hydrogen silsesquioxane e-beam resist". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 24, nr 2 (2006): 570. http://dx.doi.org/10.1116/1.2167990.
Pełny tekst źródłaClark, Nathaniel, Amy Vanderslice, Robert Grove i Robert R. Krchnavek. "Time-dependent exposure dose of hydrogen silsesquioxane when used as a negative electron-beam resist". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 24, nr 6 (2006): 3073. http://dx.doi.org/10.1116/1.2366697.
Pełny tekst źródłaLoong, W. A., i M. S. Yen. "Enhanced oxygen plasma stripping of P+-implanted negative resist by hydrogen plasma pretreatment: temperature effects". Electronics Letters 27, nr 12 (1991): 1079. http://dx.doi.org/10.1049/el:19910670.
Pełny tekst źródłaWang, Fei, Jinsheng Liang, Haifeng Liu, Xinhui Duan, Qingguo Tang i Huimin Liu. "Preparation and Performance of Inorganic Heat Insulation Panel Based on Sepiolite Nanofibers". Journal of Nanomaterials 2014 (2014): 1–7. http://dx.doi.org/10.1155/2014/876967.
Pełny tekst źródłaTu, Bo, Yantao Bao, Ming Tang, Qian Zhu, Xiaopeng Lu, Hui Wang, Tianyun Hou, Ying Zhao, Ping Zhang i Wei-Guo Zhu. "TIP60 recruits SUV39H1 to chromatin to maintain heterochromatin genome stability and resist hydrogen peroxide-induced cytotoxicity". Genome Instability & Disease 1, nr 6 (listopad 2020): 339–55. http://dx.doi.org/10.1007/s42764-020-00025-8.
Pełny tekst źródłaYan, M., J. Lee, B. Ofuonye, S. Choi, J. H. Jang i I. Adesida. "Effects of salty-developer temperature on electron-beam-exposed hydrogen silsesquioxane resist for ultradense pattern transfer". Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 28, nr 6 (listopad 2010): C6S23—C6S27. http://dx.doi.org/10.1116/1.3504497.
Pełny tekst źródłaGnan, M., S. Thoms, D. S. Macintyre, R. M. De La Rue i M. Sorel. "Fabrication of low-loss photonic wires in silicon-on-insulator using hydrogen silsesquioxane electron-beam resist". Electronics Letters 44, nr 2 (2008): 115. http://dx.doi.org/10.1049/el:20082985.
Pełny tekst źródłaChoi, Sookyung, Niu Jin, Vipan Kumar, Ilesanmi Adesida i Mark Shannon. "Effects of developer temperature on electron-beam-exposed hydrogen silsesquioxane resist for ultradense silicon nanowire fabrication". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 25, nr 6 (2007): 2085. http://dx.doi.org/10.1116/1.2794315.
Pełny tekst źródłaCrane, E., A. Kölker, T. Z. Stock, N. Stavrias, K. Saeedi, M. A. W. van Loon, B. N. Murdin i N. J. Curson. "Hydrogen resist lithography and electron beam lithography for fabricating silicon targets for studying donor orbital states". Journal of Physics: Conference Series 1079 (sierpień 2018): 012010. http://dx.doi.org/10.1088/1742-6596/1079/1/012010.
Pełny tekst źródłaHenschel, W., Y. M. Georgiev i H. Kurz. "Study of a high contrast process for hydrogen silsesquioxane as a negative tone electron beam resist". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 21, nr 5 (2003): 2018. http://dx.doi.org/10.1116/1.1603284.
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