Książki na temat „High temperature semiconductors”

M, Willander, i Hartnagel Hans 1934-, red. High temperature electronics. London: Chapman & Hall, 1997.

National Research Council (U.S.). Committee on Materials for High-Temperature Semiconductor Devices., red. Materials for high-temperature semiconductor devices. Washington, D.C: National Academy Press, 1995.

Bakker, Anton. High-accuracy CMOS smart temperature sensors. Boston, MA: Kluwer Academic Publishers, 2000.

Christou, A. Reliability of high temperature electronics. College Park, Md: Center for Reliability Engineering, University of Maryland, 1996.

Bakker, Anton. High-Accuracy CMOS Smart Temperature Sensors. Boston, MA: Springer US, 2000.

universitet, Uppsala, red. Dynamic magnetic properties of high temperature superconductors at low fields. Uppsala: Acta Universitatis Upsaliensis, 1997.

Corvasce, Chiara. Mobility and impact ionization in silicon at high temperature. Konstanz: Hartung-Gorre, 2007.

Corvasce, Chiara. Mobility and impact ionization in silicon at high temperature. Konstanz: Hartung-Gorre, 2007.

L, Shindé Subhash, i Rudman David Albert, red. Interfaces in high-Tc superconducting systems. New York: Springer-Verlag, 1994.

Longya, Xu, Zhu Lu i United States. National Aeronautics and Space Administration., red. A thermal and electrical analysis of power semiconductor devices: Research report. [Washington, DC: National Aeronautics and Space Administration, 1997.

Longya, Xu, Zhu Lu i United States. National Aeronautics and Space Administration., red. A thermal and electrical analysis of power semiconductor devices: Research report. [Washington, DC: National Aeronautics and Space Administration, 1997.

M, Singer J., red. Phase transition approach to high temperature superconductivity: Universal properties of cuprate superconductors. London: Imperial College Press, 2000.

Symposium E on High-Temperature Electronics: Materials, Devices, and Applications (1994 Strasbourg, France). High temperature electronics: Proceedings of Symposium E on High-Temperature Electronics: Materials, Devices, and Applications of the 1994 E-MRS Spring Conference, Strasbourg, France, May 24-27, 1994. Amsterdam: Elsevier, 1995.

Carpinero, Gullerno. Semiconductor terahertz technology: Devices and systems at room temperature operation. Hoboken: John Wiley & Sons, Inc., 2015.

A, Smirnov I., Institut fiziki (Akademii͡a︡ nauk SSSR) i Vsesoi͡u︡znai͡a︡ shkola "Aktualʹnye voprosy fiziki i khimii redkozemelʹnykh poluprovodnikov" (7th : 1987 : Makhachkala, Russia), red. Aktualʹnye voprosy fiziki i khimii redkozemelʹnykh poluprovodnikov: Tematicheskiĭ sbornik. Makhachkala: Institut fiziki, Dagestanskiĭ filial AN SSSR, 1988.

L, Shindé Subhash, i Rudman David A, red. Interfaces in high-T(subscript c) superconducting systems. New York: Springer-Verlag, 1994.

A, Madhukar, Society of Photo-optical Instrumentation Engineers., Society of Vacuum Coaters i SPIE Symposium on Advances in Semiconductors and Superconductors: Physics Toward Device Applications (1990 : San Diego, Calif.), red. Growth of semiconductor structures and high-Tc thin films on semiconductors: 20-21 March 1990, San Diego, Calfiornia. Bellingham, Wash., USA: The Society, 1990.

European Conference on High Temperature Electronics (3rd 1999 Berlin, Germany). HITEN 99: The Third European Conference on High Temperature Electronics. Abingdon, Oxfordshire, England: AEA Technology, 1999.

D, Hochheimer Hans, Etters Richard D, North Atlantic Treaty Organization. Scientific Affairs Division. i NATO Advanced Research Workshop on Frontiers of High-Pressure Research (1991 : Fort Collins, Colo.), red. Frontiers of high-pressure research. New York: Plenum Press, 1991.

Dammann, Michael. Defects in silicon induced by high temperature treatment and their influence on MOS-devices: A thesis submitted to the Swiss Federal Institute of Technology Zurich for the degree of Doctor of Technical Sciences. Zurich: Physical Electronics Laboratory, Swiss Federal Institute of Technology, 1994.

Christian, Fazi, Parsons James D i United States. National Aeronautics and Space Administration., red. Fast risetime reverse bias pulse failures in SiC PN junction diodes. [Washington, DC]: National Aeronautics and Space Administration, 1996.

1949-, Simons Rainee, i United States. National Aeronautics and Space Administration., red. Characteristics of III-V semiconductor devices at high temperature. [Washington, D.C.]: National Aeronautics and Space Administration, 1994.

1949-, Simons Rainee, i United States. National Aeronautics and Space Administration., red. Characteristics of III-V semiconductor devices at high temperature. [Washington, D.C.]: National Aeronautics and Space Administration, 1994.

Anthony, Powell J., Petit Jeremy B i United States. National Aeronautics and Space Administration., red. Development of silicon carbide semiconductor devices for high temperature applications. [Washington, DC]: National Aeronautics and Space Administration, 1991.

K, Yeoh W., red. Improvement of vortex pinning in MgB₂ by doping. New York: Nova Science Publishers, 2008.

Nagaev, Edouard. Magnetic Semiconductors and High Temperature Superconductivity. University of Cambridge ESOL Examinations, 1999.

Spencer, Michael, Michael Shur, Steven Denbaars i John Palmour. Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature: Volume 512. University of Cambridge ESOL Examinations, 2014.

(Editor), Magnus Willander, i H. L. Hartnagel (Editor), red. High Temperature Electronics (Electronic Materials Series). Springer, 1996.

Jeon, Deok-Su. Modeling the temperature dependence of the silicon-on-insulator mosfet for high-temperature applications. 1990.

Characteristics of III-V semiconductor devices at high temperature. [Washington, D.C.]: National Aeronautics and Space Administration, 1994.

Wide-bandgap semiconductors for high power, high frequency, and high temperature: Symposium held April 13-15, 1998, San Francisco, California, U.S.A. Warrendale, Penn: Materials Research Society, 1998.

Shinde, Subhash. Interfaces in High-Tc Superconducting Systems. Springer, 2013.

Han, Weimin. NMR study of GaAs at high temperature. 1992.

Germany) European Conference on High Temperature Electronics (3rd : 1999 : Berlin. Hiten 99: The Third European Conference on High Temperature Electronics. Institute of Electrical & Electronics Enginee, 1999.

Hartnagel, Hans, Guillermo Carpintero, Enrique Garcia-Munoz, Sascha Preu i Antti Räisänen. Semiconductor TeraHertz Technology: Devices and Systems at Room Temperature Operation. Wiley & Sons, Limited, John, 2015.

Hartnagel, Hans, Guillermo Carpintero, Enrique Garcia-Munoz, Sascha Preu i Antti Raisanen. Semiconductor TeraHertz Technology: Devices and Systems at Room Temperature Operation. Wiley & Sons, Incorporated, John, 2015.

Hartnagel, Hans, Guillermo Carpintero, Enrique Garcia-Munoz, Sascha Preu i Antti Raisanen. Semiconductor TeraHertz Technology: Devices and Systems at Room Temperature Operation. Wiley & Sons, Incorporated, John, 2015.

Dikmen, Cemal Tamer. Modeling and design of semiconductor devices and integrated circuits for high-temperature electronics. 1994.

Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature: Symposium Held April 13-15, 1998, San Francisco, California, U.S.A (Materials Research Society Symposium Proceedings). Materials Research Society, 1998.

(Editor), Hans D. Hochheimer, i Richard E. Etters (Editor), red. Frontiers of High Pressure Research (NATO Science Series: B:). Springer, 1992.

Bakker, Anton, i Johan H. Huijsing. High-Accuracy CMOS Smart Temperature Sensors (The Kluwer International Series in Engineering and Computer Science Volume 595) (The Springer International Series in Engineering and Computer Science). Springer, 2000.

Atomic layer growth and processing: Symposium held April 29 - May 1, Anaheim, California, U.S.A. Pittsburgh: Materials Research Society, 1991.

Fast risetime reverse bias pulse failures in SiC PN junction diodes. [Washington, DC]: National Aeronautics and Space Administration, 1996.

Materials for High-Temperature Semiconductor Devices. Washington, D.C.: National Academies Press, 1995. http://dx.doi.org/10.17226/5023.

Committee on Materials for High-Temperature Semiconductor Devices. Materials for High-Temperature Semiconductor Devices. National Academies Press, 1995.

Committee on Materials for High-Temperature Semiconductor Devices. Materials for High-Temperature Semiconductor Devices. National Academies Press, 1995.

Committee on Materials for High-Temperature Semiconductor Devices. Materials for High-Temperature Semiconductor Devices. National Academies Press, 1995.

Characteristics of III-V semiconductor devices at high temperature. [Washington, D.C.]: National Aeronautics and Space Administration, 1994.

Neuenschwander, Jürg. A high pressure low temperature study on rare earth compounds: Semiconductor to metal transition. 1988.

Queisser, H. J. Festkörper Probleme: Plenary Lectures of the Divisions Semiconductor Physics, Surface Physics, Low Temperature Physics, High Polymers, Thermodynamics and Statistical Mechanics, of the German Physical Society, Münster, March 19-24 1973. Elsevier Science & Technology Books, 2013.