Gotowa bibliografia na temat „High temperature semiconductors”
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Artykuły w czasopismach na temat "High temperature semiconductors"
TREW, R. J., i M. W. SHIN. "HIGH FREQUENCY, HIGH TEMPERATURE FIELD-EFFECT TRANSISTORS FABRICATED FROM WIDE BAND GAP SEMICONDUCTORS". International Journal of High Speed Electronics and Systems 06, nr 01 (marzec 1995): 211–36. http://dx.doi.org/10.1142/s0129156495000067.
Pełny tekst źródłaPalmstrøm, Chris. "Epitaxial Heusler Alloys: New Materials for Semiconductor Spintronics". MRS Bulletin 28, nr 10 (październik 2003): 725–28. http://dx.doi.org/10.1557/mrs2003.213.
Pełny tekst źródłaMa, Xi Ying. "Study of the Electrical Properties of Monolayer MoS2 Semiconductor". Advanced Materials Research 651 (styczeń 2013): 193–97. http://dx.doi.org/10.4028/www.scientific.net/amr.651.193.
Pełny tekst źródłaWESSELS, B. W. "MAGNETORESISTANCE OF NARROW GAP MAGNETIC SEMICONDUCTOR HETEROJUNCTIONS". SPIN 03, nr 04 (grudzień 2013): 1340011. http://dx.doi.org/10.1142/s2010324713400110.
Pełny tekst źródłaDezaki, Hikari, Meng Long Jing, Sundararajan Balasekaran, Tadao Tanabe i Yutaka Oyama. "Room Temperature Terahertz Emission via Intracenter Transition in Semiconductors". Key Engineering Materials 500 (styczeń 2012): 66–69. http://dx.doi.org/10.4028/www.scientific.net/kem.500.66.
Pełny tekst źródłaGuyenot, M., M. Reinold, Y. Maniar i M. Rittner. "Advanced wire bonding for high reliability and high temperature applications". International Symposium on Microelectronics 2016, nr 1 (1.10.2016): 000214–18. http://dx.doi.org/10.4071/isom-2016-wa51.
Pełny tekst źródłaZhao, Youyang, Charles Rinzler i Antoine Allanore. "Molten Semiconductors for High Temperature Thermoelectricity". ECS Journal of Solid State Science and Technology 6, nr 3 (5.12.2016): N3010—N3016. http://dx.doi.org/10.1149/2.0031703jss.
Pełny tekst źródłaChen, Sheng. "Theory And Application of Gallium Nitride Based Dilute Magnetic Semiconductors". Highlights in Science, Engineering and Technology 81 (26.01.2024): 286–90. http://dx.doi.org/10.54097/26qm0041.
Pełny tekst źródłaKappert, Holger, Sebastian Braun, Norbert Kordas, Stefan Dreiner i Rainer Kokozinski. "High Temperature GaN Gate Driver in SOI CMOS Technology". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2016, HiTEC (1.01.2016): 000112–15. http://dx.doi.org/10.4071/2016-hitec-112.
Pełny tekst źródłaTournier, Dominique, Pierre Brosselard, Christophe Raynaud, Mihai Lazar, Herve Morel i Dominique Planson. "Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications". Advanced Materials Research 324 (sierpień 2011): 46–51. http://dx.doi.org/10.4028/www.scientific.net/amr.324.46.
Pełny tekst źródłaRozprawy doktorskie na temat "High temperature semiconductors"
Skelland, Neil David. "High temperature ion implantation into insulators". Thesis, University of Sussex, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.359076.
Pełny tekst źródłaVanpeteghem, Carine B. "High-pressure high-temperature structural studies of binary semiconductors". Thesis, University of Edinburgh, 2000. http://hdl.handle.net/1842/11496.
Pełny tekst źródłaBloom, Scott Harris. "Superconducting and normal compounds : some high field/high pressure effects /". Thesis, Connect to Dissertations & Theses @ Tufts University, 1989.
Znajdź pełny tekst źródłaSubmitted to the Dept. of Physics. Includes bibliographical references (leaves 192-204). Access restricted to members of the Tufts University community. Also available via the World Wide Web;
Nilsson, Joakim. "Wireless, Single Chip, High Temperature Monitoring of Power Semiconductors". Licentiate thesis, Luleå tekniska universitet, EISLAB, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:ltu:diva-18113.
Pełny tekst źródłaGodkänd; 2016; 20160304 (joanil); Nedanstående person kommer att hålla licentiatseminarium för avläggande av teknologie licentiatexamen. Namn: Joakim Nilsson Ämne: Industriell Elektronik/Industrial Electronics Uppsats: Wireless, Single Chip, High Temperature Monitoring of Power Semiconductors Examinator: Docent Jonny Johansson, Institutionen för system- och rymdteknik, Avdelning: EISLAB, Luleå tekniska universitet. Diskutant: Docent Johan Sidén, Avdelningen för Elektronikkonstruktion, Mittuniversitetet, Sundsvall. Tid: Tisdag 3 maj, 2016 kl 8.30 Plats: A1547, Luleå tekniska universitet
Puchkov, Anton V. "The doping dependence of the optical properties of high-temperature superconductors /". *McMaster only, 1996.
Znajdź pełny tekst źródłaJansson, Rasmus. "Completion of the software required for a high-temperature DLTS setup". Thesis, Uppsala universitet, Institutionen för teknikvetenskaper, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-205076.
Pełny tekst źródłaDLTS investigation of wide bandgap materials
Diamond electronics
Barclay, Joshua David. "High Temperature Water as an Etch and Clean for SiO2 and Si3N4". Thesis, University of North Texas, 2018. https://digital.library.unt.edu/ark:/67531/metadc1404614/.
Pełny tekst źródłaKhan-Cheema, Umar Manzoor. "Vertical transport through an InAs/GaSb heterojunction at high pressures and magnetic fields". Thesis, University of Oxford, 1996. http://ora.ox.ac.uk/objects/uuid:fc7eef99-19d3-4d38-81c7-a84657282e8b.
Pełny tekst źródłaColmenares, Juan. "Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics". Doctoral thesis, KTH, Elkraftteknik, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-192626.
Pełny tekst źródłaQC 20160922
Haskel, Daniel. "Local structural studies of oriented high temperature superconducting cuprates by polarized XAFS spectroscopy /". Thesis, Connect to this title online; UW restricted, 1998. http://hdl.handle.net/1773/9712.
Pełny tekst źródłaKsiążki na temat "High temperature semiconductors"
M, Willander, i Hartnagel Hans 1934-, red. High temperature electronics. London: Chapman & Hall, 1997.
Znajdź pełny tekst źródłaNational Research Council (U.S.). Committee on Materials for High-Temperature Semiconductor Devices., red. Materials for high-temperature semiconductor devices. Washington, D.C: National Academy Press, 1995.
Znajdź pełny tekst źródłaBakker, Anton. High-accuracy CMOS smart temperature sensors. Boston, MA: Kluwer Academic Publishers, 2000.
Znajdź pełny tekst źródłaChristou, A. Reliability of high temperature electronics. College Park, Md: Center for Reliability Engineering, University of Maryland, 1996.
Znajdź pełny tekst źródłaBakker, Anton. High-Accuracy CMOS Smart Temperature Sensors. Boston, MA: Springer US, 2000.
Znajdź pełny tekst źródłauniversitet, Uppsala, red. Dynamic magnetic properties of high temperature superconductors at low fields. Uppsala: Acta Universitatis Upsaliensis, 1997.
Znajdź pełny tekst źródłaCorvasce, Chiara. Mobility and impact ionization in silicon at high temperature. Konstanz: Hartung-Gorre, 2007.
Znajdź pełny tekst źródłaCorvasce, Chiara. Mobility and impact ionization in silicon at high temperature. Konstanz: Hartung-Gorre, 2007.
Znajdź pełny tekst źródłaL, Shindé Subhash, i Rudman David Albert, red. Interfaces in high-Tc superconducting systems. New York: Springer-Verlag, 1994.
Znajdź pełny tekst źródłaLongya, Xu, Zhu Lu i United States. National Aeronautics and Space Administration., red. A thermal and electrical analysis of power semiconductor devices: Research report. [Washington, DC: National Aeronautics and Space Administration, 1997.
Znajdź pełny tekst źródłaCzęści książek na temat "High temperature semiconductors"
Hartnagel, H. L. "High temperature electronics based on compound semiconductors". W High Temperature Electronics, 161–72. Boston, MA: Springer US, 1997. http://dx.doi.org/10.1007/978-1-4613-1197-3_6.
Pełny tekst źródłaEzaki, T., N. Mori, H. Momose, K. Taniguchi i C. Hamaguchi. "Electron Transport in Quantum Wires at High Temperature". W Hot Carriers in Semiconductors, 243–46. Boston, MA: Springer US, 1996. http://dx.doi.org/10.1007/978-1-4613-0401-2_56.
Pełny tekst źródłaHultquist, Gunnar, C. Anghel i P. Szakàlos. "Effects of Hydrogen on the Corrosion Resistance of Metallic Materials and Semiconductors". W High-Temperature Oxidation and Corrosion 2005, 139–46. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-409-x.139.
Pełny tekst źródłaOhta, Hiromichi, S. Ohta i K. Koumoto. "High-Temperature Thermoelectric Performance of Strontium Titanate Degenerate Semiconductors". W Ceramic Transactions Series, 343–48. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2011. http://dx.doi.org/10.1002/9781118144121.ch33.
Pełny tekst źródłaFukumura, Tomoteru, i Masashi Kawasaki. "Magnetic Oxide Semiconductors: On the High-Temperature Ferromagnetism in TiO2- and ZnO-Based Compounds". W Functional Metal Oxides, 89–131. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2013. http://dx.doi.org/10.1002/9783527654864.ch3.
Pełny tekst źródłaBak-Misiuk, J., A. Misiuk, J. Adamczewska, M. Calamiotou, A. Kozanecki, D. Kuristyn, K. Reginski, J. Kaniewski i A. Georgakilas. "Effect of High Temperature-Pressure on Strain Relaxation in Thin Layers of Semiconductors Epitaxially Grown on Gaas and Si Substrates". W Atomistic Aspects of Epitaxial Growth, 467–75. Dordrecht: Springer Netherlands, 2002. http://dx.doi.org/10.1007/978-94-010-0391-9_36.
Pełny tekst źródłaRötger, T., G. J. C. L. Bruls, J. C. Maan, P. Wyder, K. Ploog i G. Weimann. "Connection Between Low and High Temperature Magneto-transport Measurements in GaAs/GaAlAs Heterojunctions". W High Magnetic Fields in Semiconductor Physics II, 215–19. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83810-1_35.
Pełny tekst źródłaDammann, M., T. Stockmeier i H. Baltes. "Minority carrier lifetime measurements after high temperature pre-treatment". W Crucial Issues in Semiconductor Materials and Processing Technologies, 299–304. Dordrecht: Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-2714-1_29.
Pełny tekst źródłaGimenez, Salvador Pinillos, i Egon Henrique Salerno Galembeck. "The Electrical Characteristics of the Semiconductor at High Temperatures". W Differentiated Layout Styles for MOSFETs, 27–39. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-29086-2_3.
Pełny tekst źródłaWillett, R. L., H. L. Stormer, D. C. Tsui, L. N. Pfeiffer i K. W. West. "Temperature Dependence of Transport Coefficients of 2D Electron Systems at Very Small Filling Factors". W High Magnetic Fields in Semiconductor Physics II, 153–56. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83810-1_25.
Pełny tekst źródłaStreszczenia konferencji na temat "High temperature semiconductors"
Ikossi-Anastasiou, Kiki, Andris Ezis, Keith Evans i Charles E. Stutz. "Low-temperature characterization of high-current-gain AlGaAs/GaAs narrow-base heterojunction bipolar transistor". W Semiconductors '92, redaktorzy John E. Bowers i Umesh K. Mishra. SPIE, 1992. http://dx.doi.org/10.1117/12.137715.
Pełny tekst źródłaKhokhlov, Dmitry. "Mixed Valence Puzzle in Doped IV-VI Semiconductors and its Applied Output: High-Performance Terahertz Photodetectors". W LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24. AIP, 2006. http://dx.doi.org/10.1063/1.2355325.
Pełny tekst źródłaFriedrich, A. "Very High Temperature Operation of ∼ 5.75 μm Quantum Cascade Lasers". W PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994716.
Pełny tekst źródłaKolodzey, James. "High Power, High Temperature Terahertz Emitters Based on Electronic Processes in Semiconductors". W International Conference on Fibre Optics and Photonics. Washington, D.C.: OSA, 2014. http://dx.doi.org/10.1364/photonics.2014.m2b.2.
Pełny tekst źródłaBarker, John R. "Quantised Vortex Flows And Conductance Fluctuations In High Temperature Atomistic Silicon MOSFET Devices". W PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994680.
Pełny tekst źródłaVoevodin, Valerii G., i Olga V. Voevodina. "Thermodynamics of self-propagating high-temperature synthesis of ternary semiconductors". W Material Science and Material Properties for Infrared Optoelectronics, redaktorzy Fiodor F. Sizov i Vladimir V. Tetyorkin. SPIE, 1997. http://dx.doi.org/10.1117/12.280457.
Pełny tekst źródłaTakahashi, Ryo. "Switching in low-temperature-grown InGaAs MQWs". W Nonlinear Guided Waves and Their Applications. Washington, D.C.: Optica Publishing Group, 1998. http://dx.doi.org/10.1364/nlgw.1998.nthb.1.
Pełny tekst źródłaGilbertson, Adam, C. J. Lambert, S. A. Solin i L. F. Cohen. "High resolution InSb quantum well ballistic nanosensors for room temperature applications". W THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012. AIP, 2013. http://dx.doi.org/10.1063/1.4848310.
Pełny tekst źródłaLebey, Thierry, Ichiro Omura, Masahiro Kozako, Hiroki Kawano i Masayuki Hikita. "High temperature high voltage packaging of wideband gap semiconductors using gas insulating medium". W 2010 International Power Electronics Conference (IPEC - Sapporo). IEEE, 2010. http://dx.doi.org/10.1109/ipec.2010.5543854.
Pełny tekst źródłaSapozhnikov, Sergey Z., Vladimir Yu Mityakov, Andrey V. Mityakov, Andrey A. Snarskii i Maxim I. Zhenirovskyy. "High-Temperature Heat Transfer Investigations Using Heterogeneous Gradient Sensors". W 2010 14th International Heat Transfer Conference. ASMEDC, 2010. http://dx.doi.org/10.1115/ihtc14-22527.
Pełny tekst źródłaRaporty organizacyjne na temat "High temperature semiconductors"
Siskaninetz, William J., Hank D. Jackson, James E. Ehret, Jeffrey C. Wiemeri i John P. Loehr. High-Temperature High-Frequency Operation of Single and Multiple Quantum Well InGaAs Semiconductor Lasers. Fort Belvoir, VA: Defense Technical Information Center, listopad 2000. http://dx.doi.org/10.21236/ada398284.
Pełny tekst źródłaNordheden, Karen J., i Linda J. Olafsen. High Efficiency, Room Temperature Mid-Infrared Semiconductor Laser Development for IR Countermeasures. Fort Belvoir, VA: Defense Technical Information Center, maj 2009. http://dx.doi.org/10.21236/ada501427.
Pełny tekst źródłaPark, Gil Han, i Jin-Joo Song. BMDO-AASERT: Group III Nitride Semiconductor Nanostructure Research MOCVD Growth and Novel Characterizations of High Temperature, High Carrier Density and Microcrack Lasing Effects. Fort Belvoir, VA: Defense Technical Information Center, grudzień 2001. http://dx.doi.org/10.21236/ada397734.
Pełny tekst źródłaRuddy, Frank H. Multipurpose Radiation Resistant Semiconductor Detectors for Alpha, Neutron & Low Energy Gamma Ray Measurements at High Temperatures in High-Intensity Gamma Ray. Office of Scientific and Technical Information (OSTI), czerwiec 2005. http://dx.doi.org/10.2172/884848.
Pełny tekst źródłaRuddy, Frank H. Multipurpose Radiation Resistant Semiconductor Detectors for Alpha, Neutron & Low Energy Gamma Ray Measurements at High Temperatures in High-Intensity Gamma Ray. Office of Scientific and Technical Information (OSTI), czerwiec 2005. http://dx.doi.org/10.2172/884856.
Pełny tekst źródłaRuddy, Frank H. Multipurpose Radiation Resistant Semiconductor Detectors for Alpha, Neutron & Low Energy Gamma Ray Measurements at High Temperatures in High-Intensity Gamma Ray. Office of Scientific and Technical Information (OSTI), czerwiec 2005. http://dx.doi.org/10.2172/884866.
Pełny tekst źródłaRuddy, Frank H. Multipurpose Radiation Resistant Semiconductor Detectors for Alpha, Neutron & Low Energy Gamma Ray Measurements at High Temperatures in High-Intensity Gamma Ray. Office of Scientific and Technical Information (OSTI), czerwiec 2005. http://dx.doi.org/10.2172/885081.
Pełny tekst źródłaRuddy, Frank H. Multipurpose Radiation Resistant Semiconductor Detectors for Alpha, Neutron & Low Energy Gamma Ray Measurements at High Temperatures in High-Intensity Gamma Ray. Office of Scientific and Technical Information (OSTI), czerwiec 2005. http://dx.doi.org/10.2172/885414.
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