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Gotowa bibliografia na temat „HIGH-POWER APPLICATIONS”

Autor: Grafiati

Data publikacji: 11 września 2023

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Artykuły w czasopismach na temat "HIGH-POWER APPLICATIONS"

Carroll, E. I. "Power electronics for very high power applications". Power Engineering Journal 13, nr 2 (1.04.1999): 81–87. http://dx.doi.org/10.1049/pe:19990208.

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Anlin Yi, Anlin Yi, Lianshan Yan Lianshan Yan, Bin Luo Bin Luo, Wei Pan Wei Pan i Jia Ye Jia Ye. "Effects of pattern dependence on high-power polarization-division-multiplexing applications". Chinese Optics Letters 10, nr 1 (2012): 010601–10603. http://dx.doi.org/10.3788/col201210.010601.

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Pottier, Sebastien B., Franck Hamm, Dominique Jousse, Patrick Sirot, Friedman Tchoffo Talom i Rene Vezinet. "High Pulsed Power Compact Antenna for High-Power Microwaves Applications". IEEE Transactions on Plasma Science 42, nr 6 (czerwiec 2014): 1515–21. http://dx.doi.org/10.1109/tps.2014.2321416.

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Sethakul, P., S. Rael, B. Davat i P. Thounthong. "Fuel cell high-power applications". IEEE Industrial Electronics Magazine 3, nr 1 (marzec 2009): 32–46. http://dx.doi.org/10.1109/mie.2008.930365.

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Pervak, V., O. Pronin, O. Razskazovskaya, J. Brons, I. B. Angelov, M. K. Trubetskov, A. V. Tikhonravov i F. Krausz. "High-dispersive mirrors for high power applications". Optics Express 20, nr 4 (8.02.2012): 4503. http://dx.doi.org/10.1364/oe.20.004503.

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Aralikatti, Sachin, i Reshma Nadaf. "High Speed Implementation of Floating Point Multiplier for Low Power Design Applications". Bonfring International Journal of Research in Communication Engineering 6, Special Issue (30.11.2016): 108–12. http://dx.doi.org/10.9756/bijrce.8213.

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Kumar, Srisanthosh. "Single Power-Conversion Ac–Dc Converter with High Power Factor Based On ZVZCS for Dc Drive Applications". International Journal of Psychosocial Rehabilitation 23, nr 4 (20.12.2019): 627–38. http://dx.doi.org/10.37200/ijpr/v23i4/pr190397.

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Pokryvailo, Alex, Costel Carp i Clifford Scapellati. "A High-Power High-Voltage Power Supply for Long-Pulse Applications". IEEE Transactions on Plasma Science 38, nr 10 (październik 2010): 2604–10. http://dx.doi.org/10.1109/tps.2010.2044810.

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Yeh, Ping-Chun, Hwann-Kaeo Chiou, Chwan-Ying Lee, John Yeh, Yi-Hung Tsai, Denny Tang i John Chern. "High power density, high efficiency 1W SiGe power HBT for 2.4GHz power amplifier applications". Solid-State Electronics 52, nr 5 (maj 2008): 745–48. http://dx.doi.org/10.1016/j.sse.2007.11.003.

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Pearton, S. J., F. Ren, A. P. Zhang, G. Dang, X. A. Cao, H. Cho, C. R. Abernathy i in. "GaN Electronics for High Power, High Temperature Applications". Electrochemical Society Interface 9, nr 2 (1.06.2000): 34–39. http://dx.doi.org/10.1149/2.f06002if.

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Rozprawy doktorskie na temat "HIGH-POWER APPLICATIONS"

Davari, Pooya. "High frequency high power converters for industrial applications". Thesis, Queensland University of Technology, 2013. https://eprints.qut.edu.au/62896/1/Pooya_Davari_Thesis.pdf.

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The main contribution of this project was to investigate power electronics technology in designing and developing high frequency high power converters for industrial applications. Therefore, the research was conducted at two levels; first at system level which mainly encapsulated the circuit topology and control scheme and second at application level which involves with real-world applications. Pursuing these objectives, varied topologies have been developed and proposed within this research. The main aim was to resolving solid-state switches limited power rating and operating speed while increasing the system flexibility considering the application characteristics. The developed new power converter configurations were applied to pulsed power and high power ultrasound applications for experimental validation.

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Choi, Joo-Young. "RF MEMS Switches for high power applications". Thesis, Imperial College London, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.501423.

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This thesis introduces a new concept in 3D RF MEMS switches intended for power applications. The novel switch architecture employs electrothermal hydraulic microactuators to provide mechanical actuation and 3D out-of-plane silicon cantilevers that have both spring action and latching mechanisms. This facilitates an OFF-state gap separation distance of -200 μLim between ohmic contacts, without the need for any hold power. Having simple assembly, many of the inherent problems associated with the more traditional suspension bridge and cantilever type beam architectures can be overcome. SPST switches have been developed. With the first revised switch, a novel trench structure was introduced, but the device failed mechanically due to excessive lever stiffness. High RF insertion losses were also found, due to an unwanted oxide layer directly underneath the CPW feed lines. With the second revision in which two types of lever structure were devised, mechanically working devices were achieved. The high losses found previously were significantly reduced due to a revised fabrication process to remove an unwanted oxide layer. Although a superior OFF-state isolation characteristic was achieved, unpredicted ripples were present in the ON-state, causing high insertion loss. It was found that the higher conductivity (than the manufacture's specifications) of the silicon wafer used for the cantilevers caused the ripple by carrying out circuit and electromagnetic modelling. Both the design and fabrication process have been improved through the investigation on failure mechanisms. From the final experiment, the measured ON-state insertion loss and retur loss are less than 0.4 dB and greater than 15 dB up to 12 GHz, respectively, while OFF-state isolation is better than 30 dB up to 12 GHz. The switch works well in both hot and cold-switching modes with 4.6 W of RF power at 10 GHz, without any signs of degradation to the ohmic contacts.

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Shrestha, Nabin Kumar. "High power IGBTs in soft switching applications". Thesis, University of Cambridge, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.614353.

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BRAGLIA, ANDREA. "High Power Fiber Lasers for Industrial Applications". Doctoral thesis, Politecnico di Torino, 2013. http://hdl.handle.net/11583/2506061.

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Fiber lasers can be considered a revolutionary technology in the laser field thanks to their unique properties, such as high efficiency, simplicity, compactness and robustness. These features have allowed in the last ten years their outstanding growth both in scientific and industrial applications, eroding the market share of traditional laser sources like solid-state and gas lasers. Fiber lasers power scaling to the kilowatt range is now well established and, thanks to the fiber confinement, excellent output beam quality can be obtained, with a remarkable benefit for applications. Today, high power laser sources are based on ytterbium doped, large mode area fibers because ytterbium can be efficiently pumped in the range 915nm − 975nm (where pump sources are widely available), generating laser action at 1060nm − 1090nm. With this configuration, impressive power scaling has been demonstrated in the last few years. This Ph.D. thesis has been focused on the design and development of high power fiber lasers for a wide range of industrial applications, like cutting, wending, drilling and micro-machining. Both continuous and pulse wave fiber lasers have been demonstrated and particular attention has been devoted to the development of critical technological de-vices like fused fibers combiner, strategic components either for pump light coupling into the laser active fiber (pump combiner) and for power scaling through the beam combining of several fibers lasers (signal combiner). Ytterbium doped fiber lasers have been developed during the Ph.D activity and, in particular, after a theoretical analysis devoted to the modeling of fiber laser cavities and amplifiers, a continuous wave fiber laser and two pulsed laser systems have been demonstrated. The CW fiber laser has been developed with a modular approach: 7 laser modules, capable of emitting hundreds of Watts each, have been coupled together thanks to a fused fiber combiner. A multi-kilowatts output power has been demonstrated. The photo-darkening effect in the active fiber of the laser modules has also been exper-imentally investigated. The pulsed architectures are instead a Q-switched MOPA and a Seed MOPA fiber lasers. The first system is based on a fiber laser oscillator operating in the Q-switching regime, followed by a power amplifier. This laser is capable of delivering 100ns pulses with 10W average power (2kW maximum peak power). The Seed MOPA consists instead of a current modulated laser diode followed by two amplification stages; 2W output average power with adjustable pulse widths from 10 to 100ns has been demonstrated. In the last part of the activity, a preliminary version of a thulium doped fiber laser emitting at about 2000nm (i.e. in the so-called eye-safe region) has been developed. The laser is a Seed MOPA system that has been tested in cw regime but in the near future the pulsed behavior will be investigated.

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Kumar, Kundan. "High Efficiency Power Converters for Vehicular Applications". Doctoral thesis, Università degli studi di Padova, 2016. http://hdl.handle.net/11577/3424474.

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The use of power electronics in the electrical propulsion systems leads to the optimal and efficient utilization of the traction motors and the energy sources (batteries and/or fuel cells) through the recourse to suitable power converters and their proper control. Power electronics is also used for implementing the multiple conversions of the energy delivered by the sources to feed the various loads, most of them requiring different waveforms of voltage (ac or dc) and/or different levels of voltage. This work focuses on the solutions aimed at improving the efficiency of power converters for vehicular applications, which is of great importance because of the limited amount of energy that can be stored in the electric vehicles. The study takes into consideration both the traction applications and the battery charging applications whether it is done by conductive means or by wireless power transfer (WPT) systems. The improvement in traction drive efficiency results in an increment of the drivetrain efficiency of the vehicle, leading to an extension in the driving range, while the employment of efficient power converters is required to charge batteries with increasingly large capacity. The losses of power devices are even more significant when they operate at high frequencies to compact the size of the filter elements and/or the transformers. The losses of power devices can be minimized by making the commutation soft or by replacing the conventional devices with the new generation devices based on wide bandgap (WBG) semiconductor materials. In this work, the properties of the WBG semiconductor materials are illustrated and the operation of the devices based on these materials are analyzed to grasp better their characteristics and performance. The losses of individual devices (i.e. diode, IGBT, MOSFET) as well as the operation of power converters for various applications are examined in detail. To evaluate the performance of the SiC devices in electric vehicle applications, an AC traction drive for the propulsion of a typical compact C-class electric car has been considered. Two versions of the inverter have been investigated, one built up with conventional Si IGBTs and the other one with SiC MOSFETs, and the losses in the semiconductor devices of the two versions have been found along the standard New European Driving Cycle (NEDC). By comparing the results, it is emerged that the usage of the SiC MOSFETs reduces the losses in the traction inverter of about 5%, yielding an equal increase in the car range. To complete the study, calculation of the efficiency has been extended to the whole traction drive, including the traction motor and the gear. Afterwards, a power factor correction (PFC) circuit, which is commonly used to mitigate the distortion in line current, has been studied. The study is started by considering the basic and the interleaved PFC configurations and by defining their circuit parameters. After selecting the interleaved configuration, the magnitude of voltages and currents in the PFC rectifier has been determined and the values obtained have been verified by a power circuit simulation software. The digital signal processing (DSP) has been also studied as it is used for the control operation of the PFC. At last, a prototype of PFC rectifier with interleaved configuration is designed. The design process and the specification of the components are described in brief. A prototype of synchronous rectifier (SR) is designed for the output stage of a WPT system. With respect to conventional rectifiers, in SRs the diodes are replaced by MOSFETs with their antiparallel diodes. MOSFETs are bidirectional devices that conduct with a low voltage drop. During the dead time, the diodes in antiparallel to the MOSFETs are conducting. At the end of dead-time, signals are applied at the MOSFET gates that make conducting all along the remaining period, thus reducing the conduction losses. The dead-time length is optimized by using fast switching devices based on SiC semiconductor materials. The prototype is designed and tested at the line frequency. The experimental results obtained from the prototype corroborate both the analytical results and the simulation results. As SR exhibits is working with high efficiency at the line frequency, it is expected that at the higher operating frequencies of the WPT systems, the performance of SR will be even better. A DC-DC isolated power converters used to setup the battery charger through wire system are studied. Two topologies of DC-DC converters, i.e. Dual Active Bridge (DAB) and Single Active Bridge (SAB) converters, are considered. For both the topologies operation are described at steady state. For SAB converter, two possible modes of operation are examined: discontinuous current conduction (DCM) and continuous current conduction (CCM). Soft-switching operation of both SAB and DAB converters, obtained by the insertion of auxiliary capacitors, is analyzed. Moreover, the soft-switching operating zone for the two converters are found as a function of the their output voltages and currents. Finally, the comparative analysis of soft-switching operation of SAB versus DAB converter is presented. The thesis work has been carried out at the Laboratory of “Electric Systems for Automation and Automotive” headed by Prof. Giuseppe Buja. The laboratory belongs to the Department of Industrial Engineering of the University of Padova, Italy.
L’utilizzo dell’elettronica di potenza nei sistemi di propulsione elettrica porta all'utilizzo ottimale ed efficiente dei motori di trazione e delle sorgenti di energia (batterie e/o celle a combustibile) attraverso il ricorso a convertitori statici e al loro controllo. L’elettronica di potenza è utilizzata anche per implementare più conversioni dell’energia fornita dalle sorgenti per alimentare i vari carichi, la maggior parte delle quali richiede forme d'onda di tensione diverse (AC o DC) e/o diversi livelli di tensione. Questo elaborato si concentra sulle soluzioni volte a migliorare l'efficienza dei convertitori di potenza per applicazioni veicolari, tema che è di grande interesse per la limitata quantità di energia accumulabile a bordo. Sono prese in considerazione sia le applicazioni di trazione che le applicazioni di ricarica degli accumulatori realizzate con mezzi conduttivi o con i sistemi di trasferimento di potenza senza fili (WPT). Il miglioramento dell’efficienza degli azionamenti di trazione produce un incremento dell'efficienza dell’intero powertrain del veicolo, che si traduce in un incremento dell’autonomia del veicolo, mentre l’impiego di convertitori di potenza efficienti si rende necessario per la ricarica di batterie con capacità sempre maggiori. Le perdite dei dispositivi di potenza sono ancora più significative quando operano ad alte frequenze di lavoro per compattare le dimensioni degli elementi filtranti e/o dei trasformatori. Le perdite nei dispositivi di potenza possono essere minimizzate rendendo la commutazione soft o sostituendo i dispositivi convenzionali con i dispositivi di nuova generazione basati su materiali semiconduttori con ampia banda proibita (WBG). Nell’elaborato, sono illustrate le proprietà dei materiali semiconduttori WBG e si analizza il funzionamento dei dispositivi basati su questi materiali per comprendere le loro caratteristiche e prestazioni. Le perdite di singoli dispositivi (come diodi, IGBT, MOSFET) nonché il funzionamento di convertitori di potenza per varie applicazioni sono esaminati in dettaglio. Per valutare le prestazioni dei dispositivi SiC quando vengano impiegati nei veicoli elettrici, è preso in esame un azionamento di trazione in AC impiegato per la propulsione di una tipica automobile elettrica di classe C. Due versioni di invertitore sono esaminate, una costruita con convenzionali Si IGBT e l'altra con MOSFET SiC, ed è calcolata la potenza persa nei dispositivi a semiconduttore delle due versioni di invertitore mentre l’automobile percorre il ciclo normalizzato di guida europeo (NEDC). Dal confronto dei risultati è emerso che l'utilizzo dei MOSFET SiC riduce le perdite nel convertitore di trazione di circa 5%, ottenendo un uguale incremento dell’autonomia dell’automobile. Per completare lo studio, si è successivamente esteso il calcolo dell’efficienza all’intero azionamento di trazione, comprendente il motore e il riduttore. Si è quindi studiato un raddrizzatore con circuito di correzione del fattore di potenza (PFC), utilizzato per ridurre la distorsione di corrente in linea. Lo studio è iniziato considerando sia la configurazione di base che quella interleaved e individuando i parametri circuitali. Dopo aver scelto la configurazione interleaved, sono determinate le ampiezze delle tensioni e delle correnti presenti nel raddrizzatore PFC e i valori ottenuti sono verificati mediante un software di simulazione di circuiti di potenza. E’ anche studiato un dispositivo per l'elaborazione digitale dei segnali (DSP) nel quale implementare il controllo del raddrizzatore PFC. Infine è progettato un prototipo di raddrizzatore PFC con configurazione interleaved. Il processo di progettazione e le specifiche dei componenti sono brevemente descritti. Un prototipo di rettificatore sincrono (SR) è stato sviluppato per lo stadio di uscita di un sistema WPT. In confronto con i raddrizzatori convenzionali, in un SR i diodi sono sostituiti da MOSFET con diodi in antiparallelo. I MOSFET sono dispositivi bidirezionali caratterizzati da una bassa caduta di tensione e dalla direzionalità nel condurre la corrente. Durante il tempo morto, entrano in conduzione i diodi in antiparallelo ai MOSFET. Al termine del tempo morto, ai MOSFET sono applicati segnali di comando che li portano in conduzione per tutta la restante parte del semiperiodo, riducendo così le perdite di conduzione. La durata del tempo morto è ottimizzata utilizzando dispositivi di commutazione veloci basati su materiali semiconduttori SiC. Il prototipo è stato progettato e sperimentato alla frequenza di rete. I risultati sperimentali ottenuti hanno confermato sia i risultati analitici che le simulazioni. L’elevato valore di efficienza ottenuto sul prototipo operante alla frequenza di rete fanno prevedere che il suo impiego alle alte frequenze operative dei sistemi WPT possa dare risultati ancora migliori. Si sono studiati i convertitori isolati di potenza DC-DC impiegati nei caricabatteria di tipo conduttivo per veicoli elettrici. Si sono prese in considerazione due topologie di convertitori DC-DC, il convertitore con doppio ponte attivo (DAB) e quello con un unico ponte attivo (SAB). Per entrambe le topologie è analizzato il funzionamento in condizioni di regime. Per il convertitore SAB sono esaminate due possibili modalità di funzionamento: conduzione discontinua di corrente (DCM) e conduzione di corrente continua (CCM). Si è analizzato il funzionamento in soft-switching, ottenuto con l’inserzione di condensatori ausiliari, sia del convertitore SAB che di quello DAB. E’ individuata la zona di funzionamento in soft-switching per i due convertitori in funzione delle tensioni e delle correnti di uscita. Infine, è stata eseguita un’analisi comparativa del funzionamento in soft-switching dei due convertitori. Il lavoro di tesi è stato realizzato presso il Laboratorio di "Sistemi Elettrici per l'Automazione e Automotive" diretto dal Prof. Giuseppe Buja. Il laboratorio fa parte del Dipartimento di Ingegneria Industriale dell'Università degli Studi di Padova, Italia.

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Chen, Zheng. "Electrical Integration of SiC Power Devices for High-Power-Density Applications". Diss., Virginia Tech, 2013. http://hdl.handle.net/10919/23923.

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The trend of electrification in transportation applications has led to the fast development of high-power-density power electronics converters. High-switching-frequency and high-temperature operations are the two key factors towards this target. Both requirements, however, are challenging the fundamental limit of silicon (Si) based devices. The emerging wide-bandgap, silicon carbide (SiC) power devices have become the promising solution to meet these requirements. With these advanced devices, the technology barrier has now moved to the compatible integration technology that can make the best of device capabilities in high-power-density converters. Many challenges are present, and some of the most important issues are explored in this dissertation. First of all, the high-temperature performances of the commercial SiC MOSFET are evaluated extensively up to 200 degree C. The static and switching characterizations show that the device has superior electrical performances under elevated temperatures. Meanwhile, the gate oxide stability of the device - a known issue to SiC MOSFETs in general - is also evaluated through both high-temperature gate biasing and gate switching tests. Device degradations are observed from these tests, and a design trade-off between the performance and reliability of the SiC MOSFET is concluded. To understand the interactions between devices and circuit parasitics, an experimental parametric study is performed to investigate the influences of stray inductances on the MOSFETs switching waveforms. A small-signal model is then developed to explain the parasitic ringing in the frequency domain. From this angle, the ringing mechanism can be understood more easily and deeply. With the use of this model, the effects of DC decoupling capacitors in suppressing the ringing can be further explained in a more straightforward way than the traditional time-domain analysis. A rule of thumb regarding the capacitance selection is also derived. A Power Electronics Building Block (PEBB) module is then developed with discrete SiC MOSFETs. Integrating the power stage together with the peripheral functions such as gate drive and protection, the PEBB concept allows the converter to be built quickly and reliably by simply connecting several PEBB modules. The high-speed gate drive and power stage layout designs are presented to enable fast and safe switching of the SiC MOSFET. Based on the PEBB platform, the state-of-the-art Si and SiC power MOSFETs are also compared in the device characteristics, temperature influences, and loss distributions in a high-frequency converter, so that special design considerations can be concluded for the SiC MOSFET. Towards high-temperature, high-frequency and high-power operations, integrated wire-bond phase-leg modules are also developed with SiC MOSFET bare dice. High-temperature packaging materials are carefully selected based on an extensive literature survey. The design considerations of improved substrate layout, laminated bus bars, and embedded decoupling capacitors are all discussed in detail, and are verified through a modeling and simulation approach in the design stage. The 200 degree C, 100 kHz continuous operation is demonstrated on the fabricated module. Through the comparison with a commercial SiC phase-leg module designed in the traditional way, it is also shown that the design considerations proposed in this work allow the SiC devices in the wire-bond structure to be switched twice as fast with only one-third of the parasitic ringing. To further push the performance of SiC power modules, a novel hybrid packaging technology is developed which combines the small parasitics and footprint of a planar module with the easy fabrication of a wire-bond module. The original concept is demonstrated on a high-temperature rectifier module with SiC JFET. A modified structure is then proposed to further improve design flexibility and simplify module fabrication. The SiC MOSFET phase-leg module built in this structure successfully reaches the switching speed limit of the device almost without any parasitic ringing. Finally, a new switching loop snubber circuit is proposed to damp the parasitic ringing through magnetic coupling without affecting either conduction or switching losses of the device. The concept is analyzed theoretically and verified experimentally. The initial integration of such a circuit into the power module is presented, and possible improvements are proposed.
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Harrison, Paul Martin. "Industrial thin film processing applications of high peak power, high average power Nd:YAG laser systems". Thesis, Heriot-Watt University, 2012. http://hdl.handle.net/10399/2613.

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Three high speed thin film patterning applications have been investigated using a high average power, high peak power laser system. Throughout this work the spatial intensity profile of the laser output was tailored to produce more efficient results. The first application involved the development of rapid laser patterning of an indium tin oxide layer on a glass substrate in order to generate transparent electrodes for a flat panel display. This work showed that the stitch line that occurs in-between adjacent laser pulses was formed by redeposition of material via the plume generated by the second, slightly overlapping pulse which is deposited within the region of overlap, an area which has an increased surface temperature at that time. The second application, laser edge deletion for thin film solar photo-voltaic panels, was an investigation of whether dual wavelength processing was able to avoid introducing micro-cracks into the soda-lime glass substrate. The third application was an examination of high speed removal of an aluminium coating from a stainless steel substrate which demonstrated that the layer could be adequately removed but required a series of highly overlapped pulses.

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Atkinson, Glynn James. "High power fault tolerant motors for aerospace applications". Thesis, University of Newcastle upon Tyne, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.438035.

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Dixon, Juan W. (John Walterio). "Boost type PWM rectifiers for high power applications". Thesis, McGill University, 1988. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=75864.

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The present industrial practice of ac to dc rectification uses diode or thyristor bridges which are harmonic polluters and poor power factor sources. The research of this thesis is directed towards exploiting fast, gate-turn-off semiconductor switching devices and PWM techniques in order to develop a new generation of rectifiers with nearly sinusoidal current waveforms operating at unity or even leading power factor. The scope of the investigation is restricted to the Boost rectifier (as opposed to Buck) which has bilateral power transfer capability through bidirectional current flow in the dc link.
The stand-alone, Boost Type PWM Voltage Regulated Rectifier was originally conceived as being Direct Current Controlled. The work of the thesis advances the control methodology by replacing the inner hysteresis current feedback loop by Indirect Current Control, which uses the standard sinusoidal PWM technique. In the process, the cost of two expensive high quality current transducers is avoided. Furthermore, Sinusoidal PWM has more predictable characteristics harmonics for filter design on harmonic elimination purposes.
The thesis addresses the problem of upscaling the voltage and current ratings of the rectifiers. Many semiconductor switching devices have inherent difficulties in voltage and current sharing when connected in series and/or in parallel. These difficulties are avoided by connecting rectifier modules in series and/or in parallel. Different topologies for both series and parallel connections have been analyzed mathematically. Digital simulations and experiments have confirmed the analyses.
The research was carried out by building 2 kW size laboratory models which were subjected to demanding experimental tests. Experimentally justified mathematical models have been developed and have successfully been used in predicting stability boundaries and in the dynamic compensation of feedback control.

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Fisher, Lorna. "Novel cavity design for high power microwave applications". Thesis, University of Strathclyde, 2010. http://oleg.lib.strath.ac.uk:80/R/?func=dbin-jump-full&object_id=18020.

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Książki na temat "HIGH-POWER APPLICATIONS"

A, Niku-Lari, i Mordike B. L, red. High power lasers. Oxford: Pergamon, 1989.

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A, Niku-Lari, i Mordike Barry L, red. High power lasers. Oxford: Pergamon Press, 1989.

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1952-, Swegle John Allan, red. High-power microwaves. Boston: Artech House, 1992.

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1952-, Swegle John Allan, i Schamiloglu Edl, red. High power microwaves. Wyd. 2. New York: Taylor & Francis, 2007.

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V, Gaponov-Grekhov A., i Granatstein V. L. 1935-, red. Applications of high-power microwaves. Boston: Artech House, 1994.

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United States. National Aeronautics and Space Administration., red. High-power converters for space applications. [Washington, D.C.]: National Aeronautics and Space Administration, 1991.

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Luis, Figueroa, Society of Photo-optical Instrumentation Engineers. i American Academy of Otolaryngology-Head and Neck Surgery., red. High power laser diodes and applications. Bellingham, Wash., USA: SPIE, 1988.

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Sturman, John C. High-voltage, high-power, solid-state remote power controllers for aerospace applications. [Washington, D.C.]: National Aeronautics and Space Administration, Scientific and Technical Information Branch, 1985.

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Części książek na temat "HIGH-POWER APPLICATIONS"

Mulser, Peter. "Applications of High Power Lasers". W Hot Matter from High-Power Lasers, 677–727. Berlin, Heidelberg: Springer Berlin Heidelberg, 2020. http://dx.doi.org/10.1007/978-3-662-61181-4_9.

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Powell, John, i Dirk Petring. "High-Power Laser Cutting". W Handbook of Laser Technology and Applications, 17–33. Wyd. 2. 2nd edition. | Boca Raton: CRC Press, 2021– |: CRC Press, 2021. http://dx.doi.org/10.1201/9781315310855-3.

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Kather, Alfons, i Christian Mehrkens. "Power Plant Processes: High-Pressure-High-Temperature Plants". W Industrial High Pressure Applications, 123–43. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2012. http://dx.doi.org/10.1002/9783527652655.ch6.

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Tolley, Martin, i Chris Spindloe. "Microtargetry for High Power Lasers". W Laser-Plasma Interactions and Applications, 431–59. Heidelberg: Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-00038-1_17.

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Adhikari, Manoj Singh, Vikalp Joshi i Raju Patel. "InGaAs MOSFET for High Power Applications". W International Conference on Intelligent Computing and Smart Communication 2019, 1389–94. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-15-0633-8_136.

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Liu, Xingsheng, Wei Zhao, Lingling Xiong i Hui Liu. "Applications of High Power Semiconductor Lasers". W Packaging of High Power Semiconductor Lasers, 315–64. New York, NY: Springer New York, 2014. http://dx.doi.org/10.1007/978-1-4614-9263-4_10.

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Patist, Alex, i Darren Bates. "Industrial Applications of High Power Ultrasonics". W Food Engineering Series, 599–616. New York, NY: Springer New York, 2010. http://dx.doi.org/10.1007/978-1-4419-7472-3_24.

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Apollonov, Victor V. "High Power Lasers for New Applications". W Springer Series in Optical Sciences, 167–93. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-10753-0_17.

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Banas, C. M. "Topics in High Power Laser Processing". W Laser Applications for Mechanical Industry, 3–9. Dordrecht: Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-011-1990-0_1.

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Ghannouchi, Fadhel M., i Mohammad S. Hashmi. "High-Power Load-Pull Systems". W Load-Pull Techniques with Applications to Power Amplifier Design, 113–38. Dordrecht: Springer Netherlands, 2013. http://dx.doi.org/10.1007/978-94-007-4461-5_5.

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Streszczenia konferencji na temat "HIGH-POWER APPLICATIONS"

Ocaña, J. L., C. Molpeceres, M. Morales i J. A. Porro. "Application of plasma monitoring methods to the optimized design of laser shock processing applications". W High-Power Laser Ablation 2006, redaktor Claude R. Phipps. SPIE, 2006. http://dx.doi.org/10.1117/12.668878.

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Bohlen, Heinz. "Klystron Life Results in Particle Accelerator Applications". W HIGH ENERGY DENSITY AND HIGH POWER RF:5TH Workshop on High Energy Density and High Power RF. AIP, 2002. http://dx.doi.org/10.1063/1.1498179.

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Zenteno, Luis A., i Donnell T. Walton. "Novel fiber lasers and applications". W High-Power Lasers and Applications, redaktor L. N. Durvasula. SPIE, 2003. http://dx.doi.org/10.1117/12.478309.

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Gower, Malcolm C. "Industrial applications of pulsed lasers to materials microprocessing". W High-Power Laser Ablation, redaktor Claude R. Phipps. SPIE, 1998. http://dx.doi.org/10.1117/12.321564.

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Michaelis, Max M., M. Kuppen, G. R. Turner, A. C. K. Mahlase, A. R. Prause, A. Conti i N. Lisi. "Limitations and applications of the colliding shock lens". W High-Power Laser Ablation, redaktor Claude R. Phipps. SPIE, 1998. http://dx.doi.org/10.1117/12.321622.

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Kanazawa, Hirotaka, Akihiro Nishimi, Minoru Uehara, Shinya Nakajima i Keinosuke Maeda. "5-kW lamp-pumped Nd:YAG lasers and their applications". W High-Power Laser Ablation, redaktor Claude R. Phipps. SPIE, 1998. http://dx.doi.org/10.1117/12.321590.

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Moloney, J. V. "Intense femtosecond pulse propagation with applications". W High-Power Laser Ablation 2006, redaktor Claude R. Phipps. SPIE, 2006. http://dx.doi.org/10.1117/12.674881.

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Gower, Malcolm C. "Applications of laser ablation to microengineering". W High-Power Laser Ablation III. SPIE, 2000. http://dx.doi.org/10.1117/12.407367.

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Lubatschowski, Holger, Alexander Heisterkamp, Fabian Will, Jesper Serbin, Thorsten Bauer, Carsten Fallnich, Herbert Welling i in. "Ultrafast laser pulses for medical applications". W High-Power Lasers and Applications, redaktorzy Glenn S. Edwards, Joseph Neev, Andreas Ostendorf i John C. Sutherland. SPIE, 2002. http://dx.doi.org/10.1117/12.461386.

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Mans, Torsten, Peter Russbueldt, Ernst Wolfgang Kreutz, Dieter Hoffmann i Reinhart Poprawe. "Colquiriite fs-sources for commercial applications". W High-Power Lasers and Applications, redaktorzy Joseph Neev, Andreas Ostendorf i Christopher B. Schaffer. SPIE, 2003. http://dx.doi.org/10.1117/12.478601.

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Raporty organizacyjne na temat "HIGH-POWER APPLICATIONS"

Soer, Wouter. High-Efficacy High-Power LED for Directional Applications. Office of Scientific and Technical Information (OSTI), lipiec 2018. http://dx.doi.org/10.2172/1462112.

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Shirish Mehta, Tom. Compact Transformers for Secure High Power Applications. Office of Scientific and Technical Information (OSTI), marzec 2011. http://dx.doi.org/10.2172/1011051.

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Barlow, F. D., i A. Elshabini. High-Temperature High-Power Packaging Techniques for HEV Traction Applications. Office of Scientific and Technical Information (OSTI), listopad 2006. http://dx.doi.org/10.2172/921886.

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Elshabini, Aicha, i Fred D. Barlow. High-Temperature High-Power Packaging Techniques for HEV Traction Applications. Office of Scientific and Technical Information (OSTI), listopad 2006. http://dx.doi.org/10.2172/974605.

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Wu, Richard L., i Kevin R. Bray. High Energy Density Dielectrics for Pulsed Power Applications. Fort Belvoir, VA: Defense Technical Information Center, wrzesień 2008. http://dx.doi.org/10.21236/ada494790.

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Bidhar, Sujit. Electrospun Nanofiber Materials for High Power Target Applications. Office of Scientific and Technical Information (OSTI), wrzesień 2017. http://dx.doi.org/10.2172/1460390.

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Thangaraj, Jayakar Tobin. Compact, High Power SRF Accelerators for Industrial Applications. Office of Scientific and Technical Information (OSTI), czerwiec 2018. http://dx.doi.org/10.2172/1460785.

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Courtney, Clifton C., Donald E. Voss i Tom McVeety. Antenna Beam Steering Concepts for High Power Applications. Fort Belvoir, VA: Defense Technical Information Center, marzec 2004. http://dx.doi.org/10.21236/ada425763.

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Manheimer, Wallace M. High Power Microwaves for Defense and Accelerator Applications. Fort Belvoir, VA: Defense Technical Information Center, czerwiec 1990. http://dx.doi.org/10.21236/ada223550.

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Nguyen, Dinh Cong, i John W. Lewellen. High-Power Electron Accelerators for Space (and other) Applications. Office of Scientific and Technical Information (OSTI), maj 2016. http://dx.doi.org/10.2172/1291275.

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