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Gotowe bibliografie tematyczne / High Exciton Binding Energy (60 meV)

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Gotowa bibliografia na temat „High Exciton Binding Energy (60 meV)”

Autor: Grafiati

Data publikacji: 7 września 2023

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Artykuły w czasopismach na temat "High Exciton Binding Energy (60 meV)"

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Титов, В. В., А. А. Лисаченко, И. Х. Акопян, М. Э. Лабзовская та Б. В. Новиков. "Долгоживущие центры фотокатализа, создаваемые в ZnO резонансным возбуждением экситона". Физика твердого тела 61, № 11 (2019): 2158. http://dx.doi.org/10.21883/ftt.2019.11.48422.537.

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Along with TiO_2, ZnO is the main photocatalyst for a wide class of redox reactions used to convert light energy into chemical and for environmental cleanup. It has been shown that the creation in ZnO of surface intrinsic defects in ZnO i.e. vacancies in the anionic and cationic sublattices (F-type and V-type centers) - makes it possible to create long-lived (up to 10^3 s) photocatalysis centers and thus fundamentally (tens of times) to increase the quantum yield of reactions. Slow surface states — photocatalysis centers — are created by the diffusion of electrons and holes generated during in

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Shokuhfar, Ali, Javad Samei, A. Esmaielzadeh Kandjani, and Mohammad Reza Vaezi. "Synthesis of ZnO Nanoparticles via Sol-Gel Process Using Triethanolamine as a Novel Surfactant." Defect and Diffusion Forum 273-276 (February 2008): 626–31. http://dx.doi.org/10.4028/www.scientific.net/ddf.273-276.626.

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Current researches show a growing interest in Zinc Oxide (ZnO) nanoparticles. ZnO is a semiconductor with a wide direct band gap of 3.37 eV and a large exciton binding energy of 60 meV at room temperature. Several methods have been developed in order to synthesize ZnO nanoparticles. Chemical methods, among them sol-gel process, are more convenient. Sol-gel is common for producing metal oxide nanoparticles because of its simplicity, cheapness and high quality products. In this research ZnO nanoparticles were prepared via the sol-gel process. ZnAc2.2H2O as precursor and TEA (Triethanolamine) as

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TNEH, S. S., H. ABU HASSAN, K. G. SAW, F. K. YAM, and Z. HASSAN. "STRUCTURAL AND OPTICAL PROPERTIES OF LARGE-SCALE ZnO NANOWIRES AND NANOSHEETS PREPARED BY DRY THERMAL OXIDATION." Surface Review and Letters 16, no. 06 (2009): 901–4. http://dx.doi.org/10.1142/s0218625x09013451.

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In this work, we report the morphology and optical properties of zinc oxide ( ZnO ) layers prepared by dry thermal oxidation at different annealing conditions. Morphology studies using scanning electron microscope (SEM) show that the amount of nanowires and nanosheets increases with the introduction of a flow of O2 gas. High-resolution X-ray diffraction (HR-XRD) data show that typical polycrystalline ZnO nanostructure layers have been deposited. Near-perfect stoichiometry of Zn and O atom vacancies has been observed from energy dispersion spectroscopy (EDS) spectrum. Photoluminescence (PL) spe

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Truong, Vo Doan Thanh, Thi Thanh Truc Nguyen, Thanh Lan Vo, Hoang Trung Huynh, and Thi Kim Hang Pham. "Effects of Growth Temperature on Morphological and Structural Properties of ZnO Films." Journal of Technical Education Science, no. 72A (October 28, 2022): 39–44. http://dx.doi.org/10.54644/jte.72a.2022.1238.

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Zinc oxide (ZnO) is one of the most promising oxide possibilities for use in a number of industries due to its unique properties. Because of its broad direct bandgap (3.37 eV) and strong exciton binding energy (60 meV) at ambient temperature, ZnO not only conducts electricity well but also transmits visible light and emits UV light. Here, we investigated the effect of growth temperature on ZnO thin films by changing the growth temperatures from 400 oC to 450 oC. Radio-frequency (RF) magnetron sputtering was used to create ZnO thin films on Si(100) substrates. The atomic force microscopy (AFM)

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Zayana, N. Y., and M. Rusop. "Synthesis of ZnO Complex Structures at Different Molar Ratio of Zn (NO₃)₂ and KOH by Precipitation Method." Advanced Materials Research 576 (October 2012): 330–33. http://dx.doi.org/10.4028/www.scientific.net/amr.576.330.

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ZnO as a semiconductor with wide direct band gap (3.37 eV) and high exciton binding energy of 60 meV. It has attracted in several applications such as solar cells, field emission, sensor, etc. In this study, different ZnO complex structures were prepared by precipitation method at different molar ratio. Zinc nitrate as zinc source, potassium hydroxide as precipitating agent and sodium dodecly sulphate as surfactant were used to synthesis the ZnO. The effect of different molar ratio on the morphology and size of final product have been investigated. The final products were characterized by X-ra

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Vyas, Sumit. "A Short Review on Properties and Applications of Zinc Oxide Based Thin Films and Devices : ZnO as a promising material for applications in electronics, optoelectronics, biomedical and sensors." Johnson Matthey Technology Review 64, no. 2 (2020): 202–18. http://dx.doi.org/10.1595/205651320x15694993568524.

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Zinc oxide has emerged as an attractive material for various applications in electronics, optoelectronics, biomedical and sensing. The large excitonic binding energy of 60 meV at room temperature as compared to 25 meV of gallium nitride, an III-V compound makes ZnO an efficient light emitter in the ultraviolet (UV) spectral region and hence favourable for optoelectronic applications. The high conductivity and transparency of ZnO makes it important for applications like transparent conducting oxides (TCO) and thin-film transistors (TFT). In this paper, the optoelectronic, electronic and other p

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Que, Miaoling, Chong Lin, Jiawei Sun, Lixiang Chen, Xiaohong Sun, and Yunfei Sun. "Progress in ZnO Nanosensors." Sensors 21, no. 16 (2021): 5502. http://dx.doi.org/10.3390/s21165502.

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Developing various nanosensors with superior performance for accurate and sensitive detection of some physical signals is essential for advances in electronic systems. Zinc oxide (ZnO) is a unique semiconductor material with wide bandgap (3.37 eV) and high exciton binding energy (60 meV) at room temperature. ZnO nanostructures have been investigated extensively for possible use as high-performance sensors, due to their excellent optical, piezoelectric and electrochemical properties, as well as the large surface area. In this review, we primarily introduce the morphology and major synthetic met

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Tran, Thi Ha, Thi Huyen Trang Nguyen, Manh Hong Nguyen, et al. "Synthesis of ZnO/Au Nanorods for Self Cleaning Applications." Journal of Nanoscience and Nanotechnology 21, no. 4 (2021): 2621–25. http://dx.doi.org/10.1166/jnn.2021.19110.

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Zinc oxide (ZnO) is a well-known semiconductor with valuable characteristics: wide direct band gap of ˜3.3 eV, large exciton binding energy of 60 meV at room temperature, high efficient photocatalyst, etc. which have been applied in many fields such as optical devices (LEDs, laser), solar cells and sensors. Besides, various low dimensional structures of ZnO in terms of nanoparticles, nanorods, nanoneedles, nanotetrapods find applications in technology and life. This material is also appealing due to the diversity of available processing methods including both chemical and physical approaches s

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Kim, Dong Chan, Bo Hyun Kong, Young Yi Kim, Hyung Koun Cho, Jeong Yong Lee, and Dong Jun Park. "Effect of Buffer Thickness on the Formation of ZnO Nanorods Grown by MOCVD." Solid State Phenomena 124-126 (June 2007): 101–4. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.101.

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ZnO semiconductor has a wide band gap of 3.37 eV and a large exciton binding energy of 60 meV, and displays excellent sensing and optical properties. In particular, ZnO based 1D nanowires and nanorods have received intensive attention because of their potential applications in various fields. We grew ZnO buffer layers prior to the growth of ZnO nanorods for the fabrication of the vertically well-aligned ZnO nanorods without any catalysts. The ZnO nanorods were grown on Si (111) substrates by vertical MOCVD. The ZnO buffer layers were grown with various thicknesses at 400 °C and their effect on

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Das, S., S. Sultana, I. Akter, SC Mazumdar, MA Rahman, and K. Kali. "Impact of Thickness and Substrate on Optical Properties of Zno Thin Films." Bangladesh Journal of Physics 27, no. 1 (2020): 59–68. http://dx.doi.org/10.3329/bjphy.v27i1.49726.

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During the last decades, ZnO has emerged as the most promising material in optoelectronic and optical applications in the visible region as well as in the infrared and UV region. It is because of the broad direct band gap of 3.37 eV at ambient temperature and high exciton binding energy of 60 meV allowing it to utilize the ultraviolet region. In this investigation, the optical characteristics of ZnO thin film of various thicknesses (300 nm, 600 nm, 900 nm) deposited on Quartz, Fused silica and Sapphire have been studied as a function of wavelength and photon energy. To obtain this, the equatio

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