Rozprawy doktorskie na temat „Heterostructures for spintronics”

La mise en évidence d’effets de polarisation d’échange (“exchange bias”, EB) ouvre de nouvelles perspectives dans le domaine émergeant de la spintronique organique. Dans une première partie de la thèse, on étudie l’EB des systèmes Co/MPc et Py/MPc (M=Mn, Co, Fe, Zn) par magnétométrie. Pour tous ces systèmes, l’EB est observé avec des températures de blocage de 100K environ. Ces études sont complétées par des mesures de résonance ferromagnétique confirmant les valeurs du champ de polarisation. Dans une troisième partie, on étudie les propriétés magnétiques des tricouches Co/Pc/Co. Les cycles d’hystérèse présentent des marches indiquant un renversement séquentiel des couches de cobalt. A basse température, on observe de l’anisotropie unidirectionnelle pour les deux couches mais leurs champs de polarisation diffèrent
Observation of exchange bias (EB) phenomenon by using molecular materials as a pinninglayer open the horizon for tremendous perspective in the field of organic spintronics. Thefirst part of the thesis is devoted to the study of EB of Co/MPc and Py/MPc (M=Mn, Co, Fe,Zn) by static magnetometry. The existence of EB is evidenced in all Pc molecules with block-ing temperature around 100K. The second part is devoted to the study of EB by dynamicFMR measurements. The values of EB measured by this method are compatible with staticmagnetometry measurements. The third part is devoted to study magnetic properties of thetrilayer Co/Pc/Co systems. Hysteresis loops exhibit a stepped shape indicative of successivereversal of each layer. Low temperature loops show that both Co layers experience unidi-rectional anisotropy after field cooling, with differing bias fields

Le travail exposé dans cette thèse de doctorat présente des expériences à basse température dans le domaine de la spintronique quantique sur des hétérostructures à base de germanium. Tout d’abord, les avantages attendus du germaniumpour la spintronique quantique sont exposés, en particulier la faible interaction hyperfine et le fort couplage spin-orbite théoriquement prédits dans le Ge. Dans un second chapitre, la théorie des boites quantiques et systèmes à double boite sont détaillés, en se focalisant sur les concepts nécessaires à la compréhension des expériences décrites plus tard, c’est-à-dire les effets de charge dans les boites quantiques et double boites, ainsi que le blocage de spin de Pauli. Le troisième chapitre s’intéresse à l’interaction spin-orbite. Son origine ainsi que ses effets sur les diagrammes d’énergie de bande sont discutés. Ce chapitre se concentre ensuite sur les conséquences de l’interaction spin-orbite spécifiques aux gaz bidimensionnels de trous dans des hétérostructures de germanium, c’est-à-dire l’interaction spin-orbite Rashba, le mécanisme de relaxation de spin D’Yakonov-Perel ainsi que l’antilocalisation faible.Le chapitre quatre présente des mesures effectuées sur des nanofils coeur coquillede Ge/Si. Dans ces nanofils une boite quantique se forme naturellement et celui-ci est étudié. Un système à double boite quantiques est ensuite formé par utilisation de grilles électrostatiques, révélant ainsi du blocage de spin de Pauli.Dans le cinquième chapitre sont détaillés des mesures demagneto-conductance de gas de trous bidimensionnels dans des hétérostructures de Ge/SiGe contraints dont le puit quantique se situe à la surface. Ces mesuresmontrent de l’antilocalisation faible. Les temps de transport caractéristiques sont extraits ainsi que l’énergie de séparation des trous 2D par ajustement de courbe de la correction à la conductivité due à l’antilocalisation. De plus, les mesures montrent une suppression de l’antilocalisation par un champ magnétique parallèle au puit quantique. Cet effet est attribué à la rugosité de surface ainsi qu’à l’occupation virtuelle de sous-bandes inoccupées.Finalement, le chapitre six présente des mesures de quantisation de la conductancedans des hétérostructures de Ge/SiGe contraints dont le puit quantique est enterré. Tout d’abord, l’hétérostructure est caractérisée grâce à des mesures de magneto-conductance dans une barre de Hall. Ensuite, un second échantillon dessiné spécialement pour la réalisation de points de contact quantiques est mesuré. Celui-ci montre des marches de conductance. La dépendance en champ magnétique de ces marches est mesurée, permettant ainsi une extraction du facteur gyromagnétique de trous lourds dans du germanium
This thesis focuses on low temperature experiments in germaniumbased heterostructure in the scope of quantumspintronic. First, theoretical advantages of Ge for quantum spintronic are detailed, specifically the low hyperfine interaction and strong spin orbit coupling expected in Ge. In a second chapter, the theory behind quantum dots and double dots systems is explained, focusing on the aspects necessary to understand the experiments described thereafter, that is to say charging effects in quantum dots and double dots and Pauli spin blockade. The third chapter focuses on spin orbit interaction. Its origin and its effect on energy band diagrams are detailed. This chapter then focuses on consequences of the spin orbit interaction specific to two dimensional germaniumheterostructure, that is to say Rashba spin orbit interaction, D’Yakonov Perel spin relaxation mechanism and weak antilocalization.In the fourth chapter are depicted experiments in Ge/Si core shell nanowires. In these nanowire, a quantumdot formnaturally due to contact Schottky barriers and is studied. By the use of electrostatic gates, a double dot system is formed and Pauli spin blockade is revealed.The fifth chapter reports magneto-transport measurements of a two-dimensional holegas in a strained Ge/SiGe heterostructure with the quantum well laying at the surface, revealing weak antilocalization. By fitting quantumcorrection to magneto-conductivity characteristic transport times and spin splitting energy of 2D holes are extracted. Additionally, suppression of weak antilocalization by amagnetic field parallel to the quantum well is reported and this effect is attributed to surface roughness and virtual occupation of unoccupied subbands.Finally, chapter number six reportsmeasurements of quantization of conductance in strained Ge/SiGe heterostructure with a buried quantumwell. First the heterostructure is characterized by means ofmagneto-conductance measurements in a Hall bar device. Then another device engineered specifically as a quantum point contact is measured and displays steps of conductance. Magnetic field dependance of these steps is measured and an estimation of the g-factor for heavy holes in germanium is extracted

Cette thèse porte sur l’étude du transport de charge et de spin dans les nanostructures 0D, 2D et les hétérostructures 2D-0D de Van der Waals (h-VdW). Les nanocristaux pérovskite de La0.67Sr0.33MnO3 ont révélé des magnétorésistances (MR) exceptionnelles à basse température résultant de l’aimantation de leur coquille indépendamment du coeur ferromagnétique. Les transistors à effet de champ à base de MoSe2 ont permis d’élucider les mécanismes d’injection de charge à l’interface metal/semiconducteur 2D. Une méthode de fabrication des h-VdW adaptés à l’électronique à un électron est rapportée et basée sur la croissance d’amas d’Al auto-organisés à la surface du graphene et du MoS2. La transparence des matériaux 2D au champ électrique permet de moduler efficacement l’état électrique des amas par la tension de grille arrière donnant lieu aux fonctionnalités de logique à un électron. Les dispositifs à base de graphene présentent des MR attribuées aux effets magnéto-Coulomb anisotropiques
This thesis investigates the charge and spin transport processes in 0D, 2D nanostructures and 2D-0D Van der Waals heterostructures (VdWh). The La0.67Sr0.33MnO3 perovskite nanocrystals reveal exceptional magnetoresistances (MR) at low temperature driven by their paramagnetic shell magnetization independently of their ferromagnetic core. A detailed study of MoSe2 field effect transistors enables to elucidate a complete map of the charge injection mechanisms at the metal/MoSe2 interface. An alternative approach is reported for fabricating 2D-0D VdWh suitable for single electron electronics involving the growth of self-assembled Al nanoclusters over the graphene and MoS2 surfaces. The transparency the 2D materials to the vertical electric field enables efficient modulation of the electric state of the supported Al clusters resulting to single electron logic functionalities. The devices consisting of graphene exhibit MR attributed to the magneto-Coulomb effect

Recent research in the field of organic spintronics highlighted the peculiar spin-dependent properties of the interface formed by an organic semiconductor (OSC) chemisorbed over a 3d ferromagnetic metal, also known as spinterface. The hybridization between the molecular and metallic orbitals, typically π orbitals of the molecule and the d orbitals of the ferromagnet, give rise to spin dependent properties that were not expected by considering the single components of interfaces, as for example the appearance of a magnetic moment on non-magnetic molecules or changes in the magnetic behavior of the ferromagnet. From a technological viewpoint these aspects provide novel engineering schemes for spin memory and for spintronics devices, featuring unexpected interfacial magnetoresistance, spin-filtering effects and even modulated magnetic anisotropy. Applications of these concepts to devices require nevertheless to transfer the spinterface effects from an ideal interface to room temperature operating thin films. In this view, my work presents for the first time how spinterface effects can be obtained even at room temperature on polycrystalline ferromagnetic Co thin films interfaced with organic molecules. The considered molecules were commercial and widely used in the field of organic electronics: Fullerene (C60), Gallium Quinoline (Gaq3) and Sexithiophene (T6). An increase of coercivity, up to 100% at room temperature, has been obtained on the Co ultra-thin films by the deposition of an organic molecule. This effect is accompanied by a change of in-plane anisotropy that is molecule-dependent. Moreover the Spinterface effect is not limited to the interfacial layer, but it extends throughout the whole thickness of the ferromagnetic layer, posing new questions on the nature of the 3d metal-molecule interaction.

En esta memoria se describe el crecimiento, mediante pulverización catódica rf, de capas delgadas de NiFe2O4 y CoCr2O4 sobre distintos substratos y la subsiguiente caracterización magnética y eléctrica. El objetivo es integrar dichas capas en dispositivos magnetoelectrónicos tales como uniones túnel o filtros de spin.
Hemos descubierto que el crecimiento epitaxial permite estabilizar fases nuevas del óxido NiFe2O4, fases que no existen en la forma másiva, y que tienen propiedades remarcablemente distintas. Como por ejemplo: un aumento dramático de la magnetización o la posibilidad de modificar drásticamente sus propiedades de transporte, pudiéndose obtener capas aislantes -como es en forma cerámica- o conductivas. Se ha realizado un estudio sistemático de los efectos del espesor de la capa y de las condiciones de crecimiento sobre las propiedades de magnetotransporte y los mecanismos de crecimiento.
Argumentamos que el aumento de la magnetización es debido a la estabilización de una fase NiFe2O4 espinela que es parcialmente inversa, en la que los iones Ni2+ están distribuidos entre las dos posiciones disponibles (tetraédrica y octaédrica) de la estructura. En la forma masiva del material los iones Ni solo se encuentran en los sitios octaédricos. La introducción adicional de vacantes de oxígeno es probablemente la causa de la existencia de una configuración electrónica mixta Fe2+/3+ en la subred octaédrica y de la alta conductividad de las capas.
Hemos aprovechado la capacidad de obtener epitaxias de NiFe2O4 ferrimagnéticas conductoras o aislantes para integrarlas en dos distintos dispositivos magnetoelectrónicos: una unión túnel magnética y un filtro de spin.
Las capas conductoras de NiFe2O4 se han empleado como electrodos ferrimagnéticos-metálicos en uniones túnel. El otro electrodo magnético es (La,Sr)MnO3 y la barrera túnel SrTiO3. Se ha podido medir una magnetoresistencia túnel importante hasta temperaturas tan altas como 280K. Los valores de magnetoresistencia corresponden a una polarización de spin del NiFe2O4 de aproximadamente un 40%, que es prácticamente independiente de la temperatura. Estos resultados sugieren que la nueva fase conductora que hemos estabilizado es un candidato interesante como fuente de corriente polarizada en spin.
Por otra parte, el NiFe2O4 aislante se ha implementado, por primera vez, como barrera túnel en una heteroestructura de filtro de spin. El electrodo magnético es (La,Sr)MnO3 y el electrodo no magnético Au. Hemos observado una magnetoresistencia túnel que alcanza valores de hasta un 50%. A partir de estas medidas, hemos deducido detalles relevantes de la estructura electrónica de la fase parcialmente inversa de NiFe2O4.
Hemos crecido el óxido CoCr2O4 sobre distintos substratos, tales como MgO(001) y MgAl2O4(001). Hemos podido comprobar que este óxido presenta una pronunciada tendencia a un crecimiento 3D. Por esta razón, las superficies de la capa no son nunca suficientemente planas y no se pueden usar en heteroestructuras túnel.
Sin embargo hemos aprovechado esta característica para controlar el crecimiento de estas estructuras 3D y hemos conseguido la formación de objetos submicrónicos, autoorganizados con formas piramidales muy bien definidas. El estudio detallado del efecto de los parámetros de crecimiento nos ha permitido por una parte, dilucidar cuales son los mecanismos que llevan a una autoorganización tan perfecta y por otra determinar que, en las condiciones adecuadas, se pueden obtener templates totalmente faceteados con múltiples posibilidades para futuras aplicaciones.
In this thesis the growth of thin films of NiFe2O4 and CoCr2O4 by RF sputtering on different oxide substrates and the characterization of their magnetic and electric properties is reported. The aim is to integrate the films into spintronic devices namely magnetic tunnel junctions and spin filter.
It was found that the epitaxial growth of these films permits to stabilize new phases of NiFe2O4, which are not found for the bulk material and which show remarkably distinct properties. A strong enhancement of the saturation magnetization was found as well as the possibility to tune the electric behaviour of the films from insulating - like in bulk NiFe2O4 - to conducting. A systematic study of the influence of the film thickness and growth parameters on the properties of the films was carried out.
The enhancement of the saturation magnetization can be explained by a partially inversed spinel structure, where the Ni2+ ions are distributed over both available sites (octahedral and tetrahedral) of the structure, whereas in bulk NiFe2O4 the Ni2+ ions are only located on the octahedral sites of the structure. An additional introduction of oxygen vacancies causes the formation of mixed valence Fe2+/3+ chains on the octahedral sites and thus a hopping conductivity.
We have taken advantage of our ability to obtain epitaxial ferromagnetic NiFe2O4 films of insulating or conducting character to integrate them in two different spintronic devices: the magnetic tunnel junction and the spin filter.
The conducting NiFe2O4 was integrated in a magnetic tunnel junction as a magnetic electrode, with a (La,Sr)MnO3 counterelectrode and a SrTiO3 barrier. A magnetoresistance was measured up to a temperature of 280K. The values of the magnetoresistance correspond to a spin-polarization of 40%, which is basically constant in temperature. This results show that the conductive phase of NiFe2O4 is an interesting candidate for the application as a source of highly spin-polarized current.
On the other hand the insulating NiFe2O4 has been integrated into a spin filter as the magnetic barrier. The magnetic electrode was again (La,Sr)MnO3 and the counter electrode Au. A magnetoresistance up to 50% was observed. It was possible to deduce the band structure of NiFe2O4 from these measurements.
Thin films of CoCr2O4 were grown on different substrates like MgO(001) or MgAl2O4(001). It was found that the material shows a pronounced tendency to grow in a three dimensional manner. Thus the surface of these films is not sufficiently smooth to integrate them into tunnel contacts.
However, we were able to control the growth and morphology of the three dimensional structures leading to the formation of submicron self-organized pyramids with a square or elongated base. By a detailed study of the influence of the growth parameters it was possible to elucidate the underlying growth mechanisms and to obtain a fully faceted surface, which can be used in different applications.

Des couches minces à base de NiFe2O4 et CoCr2O4 ont été réalisées par pulvérisation cathodique sur des substrats d'oxydes, dans le but de les intégrer dans des hétérostructures pour l'électronique de spin.
Il a été montré que la croissance épitaxiale permet la stabilisation de nouvelles phases de NiFe2O4 qui n'existent pas sous forme massive. Ces phases présentent une augmentation forte du moment magnétique ou la possibilité d'ajuster les propriétés électriques du matériaux. Nous expliquons l'augmentation du moment magnétique par une inversion partielle des sites cationiques du NiFe2O4, matériau dans lequel les ions Ni2+ sont répartis entre les deux sites de la structure spinelle. Les lacunes en oxygène sont susceptibles de favoriser un comportement conducteur en induisant des états de valence mixte Fe2+/3+ dans les sites octaédriques.
Des couches minces de NiFe2O4 conducteur ont été utilisées comme électrodes ferrimagnétiques dans des jonctions tunnel. Une magnétorésistance significative a été mesurée, correspondant à une polarisation de spin de 40% du NiFe2O4 pratiquement constante en température. Le NiFe2O4 isolant a été incorporé avec succès en tant que barrière tunnel ferrimagnétique au sein de jonctions de type "filtre à spin", ce qui en fait la première structure de ce type réalisée avec des oxydes complexes.
Il a été mis en évidence que les couches minces de CoCr2O4 ont une tendance forte à croître de manière tridimensionnelle de la forme des objets pyramidaux aux facettes parfaitement définies. Cette croissance auto-organisée de nano-objets et sa dépendance à l'égard des conditions de dépôt été étudie en detail.

Magnetic oxides have become of interest source for spin transport devices due to their high spin polarization. But the real applications of these oxides remains unsatisfactory up to date, mostly due to the change of properties as a result of nano structuring. Magnetite (Fe3O4) is one such a material. High Curie temperature and the half metallicity of Fe3O4 make it a good potential candidate for spin transport devices. Studies have shown that the nano structuring Fe3O4 changes most of it's important properties. This includes high saturation magnetization and drop of conductivity by a few orders of magnitude in Fe3O4 thin films. In this study, we have successfully grown Fe3O4 by reactive sputtering and studied the effect of transition metal buffer layers on structural, transport, and magnetic properties of Fe3O4. It is shown that the lattice strain created by different buffer layers has major impacts on the properties of Fe3O4 thin films. Also for the first time the magnetic force microscopic measurements were carried out in Fe3O4 thin films through Verwey transition. MFM data with the magnetization data have confirmed that the magnetization of Fe3O4 thin films rotate slightly out of the plane below the Verwey transition. Fe3O4 thin films were also successfully used in fabricating spin valve structures with Chromium and Permalloy. Here, the Fe3O4 was used to generated the spin polarized electrons through reflection instead of direct spin injection. This is a novel method that can be used to inject spins into materials with different conductivities, where the traditional direct spin injection fails. Also the effect of growth field on Fe3O4 and Fe3O4/Cr/Py spin valves were investigated. In Fe3O4 the growth field induced an uni-axial anisotropy while it creates a well defined parallel and anti-parallel states in spin valves. Magneto thermal phenomenon including spin dependent Seebeck effect, Planar Nernst effect, and Anomalous Nernst effect were measured in ferromagnetic thin films and spin valves. Spin dependent Seebeck effect and planar Nernst effect were directly compared with the charge counterpart anisotropic magneto resistance. All the effects exhibited similar behavior indicating the same origin, namely spin dependent scattering.

Epitaxial multilayer h-BN(0001) heterostructures and graphene/h-BN heterostructures have many potential applications in spintronics. The use of h-BN and graphene require atomically precise control and azimuthal alignment of the individual layers in the structure. These in turn require fabrication of devices by direct scalable methods rather than physical transfer of BN and graphene flakes, and such scalable methods are also critical for industrially compatible development of 2D devices. The growth of h-BN(0001) multilayers on Co and Ni, and graphene/h-BN(0001) heterostructures on Co have been studied which meet these criteria. Atomic Layer Epitaxy (ALE) of BN was carried out resulting in the formation of macroscopically continuous h-BN(0001) multilayers using BCl3 and NH3 as precursors. X-ray photoemission spectra (XPS) show that the films are stoichiometric with an average film thickness linearly proportional to the number of BCl3/NH3 cycles. Molecular beam epitaxy (MBE) of C yielded few layer graphene in azimuthal registry with BN/Co(0001) substrate. Low energy electron diffraction (LEED) measurements indicate azimuthally oriented growth of both BN and graphene layers in registry with the substrate lattice. Photoemission data indicate B:N atomic ratios of 1:1. Direct growth temperatures of 600 K for BN and 800 to 900 K for graphene MBE indicate multiple integration schemes for applications in spintronics.

Neste trabalho e apresentado um estudo, via teoria de massa efetiva multibanda autoconsistente de heteroestruturas de semicondutores magnéticos diluídos, generalizada para incluir parâmetros de diferentes materiais. A interacao magnética e descrita por um modelo de campo médio baseado no mecanismo de troca indireta, com a possibilidade de inclusão de diferentes íons magnéticos. As equacoes de massa efetiva são resolvidas de forma autoconsistente com o auxílio da equacao de Poisson. As interacoes de spin-órbita e de troca-correlacao, na aproximacao de densidade local, são incluídas no cálculo. O método e aplicado para o estudo das estruturas de bandas e densidades de carga com separacao por spin do portador de heteroestruturas com dopagem tipo-n e tipo-p, variando a geometria dos pocos magnéticos e também o período da super-rede, as densidades de portadores e as concentracoes de íons magnéticos. Solucoes autoconsistentes da equacao de massa efetiva são encontradas para o oxido semicondutor (Zn,Co)O. Será mostrada a separacao de portadores por spin em funcao dos parâmetros variados, simulando diversas concentracoes possíveis, utilizadas em sistemas descritos na literatura, e será analisado o comportamento dos perfis de potencial. Usando os dados obtidos, um diagrama de fases será traçado com base na polarizacao total ou parcial dos portadores, e o seu comportamento será discutido. Também serão mostradas as estruturas de bandas, os perfis de potencial e as distribuicoes de carga do semicondutor (GaMn)As, variando as densidades de portadores e a direcao do campo magnético intrínseco, gerado pela dopagem com íons magnéticos. Os resultados obtidos neste trabalho podem servir de guia para futuras experiências e para o desenvolvimento de dispositivos com semicondutores magnéticos diluídos baseados em (Zn,Co)O e (Ga,Mn)As. Os métodos aqui descritos são gerais e podem ser utilizados para outros materiais.
This work presents a self-consistent multiband effective mass theory applied to diluted magnetic semiconductor heterostructures, generalized to include parameters of different ma- terials. The magnetic interaction is described by a mean-field approximation based on indirect- exchange mecanism, with the possibility of inclusion of different magnetic ions. The effective mass equations are solved self-consistently with the help of the Poisson equation. Spin-orbit and exchange-correlation interactions are included in the simulation in the local density appro- ximation. The method is used to study band structures and charge densities separated by spin in n- and p-type heterostructures. The magnetic well\'s geometry, the superlattice period, the carrier density and the magnetic ion concentration are changed. Self-consistent solutions of the effective mass equation are found for the semiconductor oxide (Zn,Co)O. Charge separation by spin will be show in function of the variation of the simulation parameters, simulating several ion concentrations and charge densities used in systems described in literature, and the potenti- als profiles will be analised. Using the data obtained a phase diagram will be plotted, based on the carrier total or partial carrier polarization, and a model for the behavior of the phase diagram will be discussed. It will also be shown band structures, potential profiles and charge densities of the (Ga,Mn)As semiconductor, varying it carrier density and the direction of the intrinsic magnetic field, generated by the magnetic ions that doped the heterostructure. The results ob- tained in this work can be used as a guide in future experiences and development of devices with diluted magnetic semiconductors based on (Zn,Co)O and (Ga,Mn)As. The methods here described are general and can be used for other materials.

Multiferroic materials exhibit unique properties such as simultaneous existence of two or more of coupled ferroic order parameters (ferromagnetism, ferroelectricity, ferroelasticity or their anti-ferroic counterparts) in a single material. Recent years have seen a huge research interest in multiferroic materials for their potential application as high density non-volatile memory devices. However, the scarcity of these materials in single phase and the weak coupling of their ferroic components have directed the research towards multiferroic heterostructures. These systems operate by coupling the magnetic and electric properties of two materials, generally a ferromagnetic material and a ferroelectric material via strain. In this work, horizontal heterostructures of composite multiferroic materials were grown and characterized using pulsed laser ablation technique. Alternate magnetic and ferroelectric layers of cobalt ferrite and lead zirconium titanate, respectively, were fabricated and the coupling effect was studied by X-ray stress analysis. It was observed that the interfacial stress played an important role in the coupling effect between the phases. Doped zinc oxide (ZnO) heterostructures were also studied where the ferromagnetic phase was a layer of manganese doped ZnO and the ferroelectric phase was a layer of vanadium doped ZnO. For the first time, a clear evidence of possible room temperature magneto-elastic coupling was observed in these heterostructures. This work provides new insight into the stress mediated coupling mechanisms in composite multiferroics.

I dispositivi elettronici che sfruttano proprietà legate allo spin elettronico costituiscono un settore molto promettente per lo sviluppo della nanoelettronica del futuro. Recentemente, gli isolanti topologici tridimensionali (IT-3D), quando posti a contatto con materiali ferromagnetici (FM), giocano un ruolo centrale nel contesto del miglioramento dell’efficienza di conversione tra spin e carica elettronici in eterostrutture di tipo FM/TI. L’oggetto principale di questa tesi è lo studio delle interazioni chimico-fisiche tra l’IT-3D Sb2Te3, nelle sue forme granulare ed epitassiale, con film di Fe e Co attraverso l’uso di tecniche di Diffrazione/Riflettività di raggi-X, spettroscopia di risonanza ferromagnetica (FMR) e pompaggio di spin in risonanza ferromagnetica (SP-FMR). In concomitanza con l’ottimizzazione delle proprietà dei materiali, un particolare interesse è stato rivolto verso l’impatto industriale della ricerca presentata. Per questo motivo, per la produzione di Sb2Te3 e di alcuni dei FM impiegati, sono state impiegate tecniche di deposizione di materiali su larga scala ( 4 pollici), quali la Metal Organic Chemical Vapor Deposition (MOCVD) e l’Atomic Layer Deposition (ALD) rispettivamente. Una approfondita caratterizzazione chimica, strutturale e magnetica dell’interfaccia Fe/ Sb2Te3-granulare ha evidenziato un marcato intermixing tra i materiali e una generale tendenza degli atomi di Fe nel legare con l’elemento calcogenuro quando presente in un IT. Attraverso trattamenti termici rapidi e a bassa temperatura sottoposti sui film di Sb2Te3 granulare prima della crescita del Fe, l’interfaccia Fe/Sb2Te3-granulare è risultata morfologicamente più netta e chimicamente stabile. Lo studio di film sottili di Co cresciuti attraverso ALD su Sb2Te3 granulare ha permesso la produzione di interfacce Co/Sb2Te3-granulare di alta qualità, con la possibilità inoltre di modificare le proprietà magneto-strutturali dei film di Co attraverso una selezione appropriata di substrati. Con l’obbiettivo di migliorare le proprietà dei film di Sb2Te3, dei trattamenti termici specifici sono stati condotti su Sb2Te3 granulare appena cresciuto, ottenendo film di Sb2Te3 altamente orientati con una qualità cristallina vicina al cristallo singolo di tipo epitassiale. Questi substrati di Sb2Te3 sono stati utilizzati per produrre eterostrutture di Au/Co/Sb2Te3-epitassiale e Au/Co/Au/Sb2Te3-epitassiale per studiare la loro risposta di FMR. I dati di FMR per il campione Au/Co/Sb2Te3-epitassiale sono stati interpretati considerando un contributo di Two Magnon Scattering (TMS) dominante, verosimilmente a causa della presenza di rugosità magnetica all’interfaccia Co/Sb2Te3-epitassiale. L’introduzione di un interlayer di Au per evitare il contatto diretto tra Co e Sb2Te3 si è dimostrato vantaggioso per la totale eliminazione del contributo di TMS. Misure di SP-FMR sono state condotte sulla struttura ottimizzata Au/Co/Au/Sb2Te3-epitassiale, sottolineando il ruolo giocato dallo strato di Sb2Te3-epitassiale nel processo di SP. I segnali di SP ricavati da campioni di Au/Co/Au/Si(111) e Co/Au/Si(111) sono stati utilizzati per determinare l’efficienza di conversione spin-carica ottenuta dall’introduzione dello strato di Sb2Te3. L’efficienza estratta è stata calcolata interpretando i dati di SP-FMR attraverso i modelli di effetto Edelstein inverso ed effetto di Spin-Hall inverso, i quali hanno dimostrato che l’IT-3D Sb2Te3 è un candidato promettente per essere impiegato nella prossima generazione di dispositivi spintronici.
Spin-based electronic devices constitute an intriguing area in the development of the future nanoelectronics. Recently, 3D topological insulators (TI), when in contact with ferromagnets (FM), play a central role in the context of enhancing the spin-to-charge conversion efficiency in FM/TI heterostructures. The main subject of this thesis is the study of the chemical-physical interactions between the granular and epitaxial Sb2Te3 3D-TI with Fe and Co thin films by means of X-ray Diffraction/Reflectivity, Ferromagnetic Resonance spectroscopy (FMR) and Spin Pumping-FMR. Beside the optimization of the materials properties, particular care was taken on the industrial impact of the presented results, thus large-scale deposition processes such as Metal Organic Chemical Vapor Deposition (MOCVD) and Atomic Layer Deposition (ALD) were adopted for the growth of the Sb2Te3 3D-TI and part of the FM thin films respectively. A thorough chemical, structural and magnetic characterization of the Fe/granular Sb2Te3 interface evidenced a marked intermixing between the materials and a general bonding mechanism between Fe atoms and the chalcogen element in chalcogenide-based TIs. Through rapid and mild thermal treatments performed on the granular Sb2Te3 substrate prior to Fe deposition, the Fe/granular-Sb2Te3 interface turned out to be sharper and chemically stable. The study of ALD-grown Co thin films deposited on top of the granular-Sb2Te3 allowed the production of high-quality Co/granular-Sb2Te3interfaces, with also the possibility to tune the magneto-structural properties of the Co layer through a proper substrate selection. In order to improve the structural properties of the Sb2Te3, specific thermal treatments were performed on the as deposited granular Sb2Te3, achieving highly oriented films with a nearly epitaxial fashion. The latter substrates were used to produce Au/Co/epitaxial-Sb2Te3 and Au/Co/Au/epitaxial-Sb2Te3 and the dynamic of the magnetization in these structures was investigated studying their FMR response. The FMR data for the Au/Co/Sb2Te3 samples were interpreted considering the presence of a dominant contribution attributed to the Two Magnon Scattering (TMS), likely due to the presence of an unwanted magnetic roughness at the Co/epitaxial-Sb2Te3 interface. The introduction of a Au interlayer to avoid the direct contact between Co and Sb2Te3 layers was shown to be beneficial for the total suppression of the TMS effect. SP-FMR measurements were conducted on the optimized Au/Co/Au/epitaxial-Sb2Te3 structure, highlighting the role played by the epitaxial Sb2Te3substrate in the SP process. The SP signals for the Au/Co/Au/Si(111) and Co/Au/Si(111) reference samples were measured and used to determine the effective spin-to-charge conversion efficiency achieved with the introduction of the epitaxial Sb2Te3 layer. The extracted SCC efficiency was calculated interpreting the SP-FMR data using the Inverse Edelstein effect and Inverse Spin-Hall effect models, which demonstrated that the Sb2Te3 3D-TI is a promising candidate to be employed in the next generation of spintronic devices.

Nel campo dei semiconduttori, lo studio delle proprietà spin dipendenti forniscono informazioni fondamentali per la realizzazione di dispositivi che uniscano spin, fotonica ed elettronica. In questi dispositivi l’informazione è codificata nel grado di libertà (DOF) dello spin, sfruttando l’accoppiamento spin-orbita (SOC) tra il momento angolare del fotone e lo spin del portatore. Ho concentrato la mia ricerca sullo studio del SOC con spettroscopia ottica in Si, Ge, Sn e loro leghe. Questi materiali possiedono proprietà promettenti per applicazioni di spintronica, tra cui lunghi tempi di vita e lunghezze di diffusione dello spin. I processi di fabbricazione aprono la strada all’ingegnerizzazione del bandgap e dello strain come DOF addizionali per sintonizzare i fenomeni spin-dipendenti. La spettroscopia ottica permette di superare i problemi delle misure elettriche, come la qualità dei contatti, che impediscono una stima corretta dei parametri cinetici. I pozzi quantici (QW), sono valide piattaforme per unire i DOF sopracitati e permettere la manipolazione dello spin con campi elettrici. Nei sistemi a QW che mancano della simmetria di inversione di punto o di quella strutturale (BIA/SIA), la degenerazione di spin è rimossa dai campi Dresselhaus o Rashba. In quanto campi magnetici, possono agire agiscono sullo spin cambiandone l’orientazione. La SIA può sorgere da un drogaggio asimmetrico. In questo caso, il dispositivo possiede anche un campo elettrico che può essere sfruttato. Infatti, con un campo elettrico esterno si può modulare il campo Rashba, manipolando lo spin. Questa possibilità è significativa per la spintronica, si pensi allo spin-FET, dove la tensione di gate seleziona l’orientazione dello spin e quindi lo stato on/off. Ho eseguito misure di fotoluminescenza (PL) su campioni costituiti da uno stack di 50 QW di Ge/Si0.15Ge0.85 cresciuto nella zona intrinseca di un diodo p-i-n. Il drogaggio asimmetrico introduce la SIA, permettendo di manipolare elettricamente lo spin. Tramite due contatti in Al, ho sintonizzato un campo elettrico esterno e studiato gli effetti sulla popolazione di spin tramite PL. Inoltre, un’analisi in funzione della potenza ha mostrato una dipendenza della polarizzazione della PL dalla pompa ottica. Ho studiato anche una singola modulation-doped QW Ge0.91Sn0.09/Ge. Il profilo di banda confina delle lacune e permette la formazione di un gas bidimensionale di lacune. La struttura asimmetrica introduce la SIA, permettendo di studiare meccanismi di conversione spin-carica. Tramite litografia ho realizzato una barra di Hall ed ho eseguito misure di effetto spin-Hall inverso, da cui ho potuto estrarre l’angolo di spin-Hall. Ho anche compiuto misure magneto-ottiche a 4K, sfruttando l’effetto Hanle, per ottenere il tempo di vita (T) del portatore, che risulta di pochi ns. L’effetto Hanle è stato applicato per la prima volta nei materiali del quarto gruppo in epistrati di Ge1-xSnx (sotto), e l’ho esteso alle QW, dimostrandosi una tecnica affidabile per determinare T. Ho studiato anche campioni di epistrato di Ge1-xSnx. Il contenuto di Sn varia da 0 a 10 %, e lo strain compressivo assicura una natura indiretta del bandgap. Ho estratto T e ho trovato un comportamento non banale al variare della percentuale di Sn, la cui origine può essere attribuita alla presenza di difetti del cristallo. Questi difetti sono dovuti possibilmente alla crescita fortemente fuori equilibrio necessaria per la realizzazione di campioni di Ge1-xSnx ricchi in Sn. Per concludere, in questa tesi mi sono occupato di misure ottiche per indagare il SOC in eterostrutture di materiali del IV gruppo. I risultati ottenuti sono un passo in avanti nell’investigazione della dinamica dello spin elettronico del gruppo IV e aprono la strada verso studi futuri sulla manipolazione elettro-ottica dello spin in tecnologie quantistiche basate sull’interazione spin-luce, come spin-FET, spin-laser
In the field of semiconductors, the study of spin-dependent properties provides fundamental information needed for the realization of devices that merge spin, photonic and electronic functionalities. In these devices the information is encoded in the spin degree of freedom (DOF), exploiting the interaction between the angular momentum of the photon and the carrier spin via the spin-orbit coupling (SOC). I focused on the study of SOC in Si, Ge, Sn and their alloys using optical spectroscopy. These materials possess promising properties for spintronics applications such as long spin lifetime, diffusion length and decoherence time. Notably, the advanced manufacture also opens the way to bandgap and strain engineering as further DOF to tune spin-dependent phenomena, whereas the application of optical spectroscopy allows to overcome typical problems of electrical measurements, e.g., the quality of contacts, that hamper the estimation of carrier kinetics parameters Quantum well (QW) systems are valid platforms to merge all the aforementioned DOF and to also introduce a way to manipulate the spin via electric fields. Indeed, in QW systems that possess bulk or structure inversion asymmetry (BIA/SIA), the spin degeneracy is removed due to the Dresselhaus or Rashba fields. As effective magnetic fields, they can act on the spin of a carrier, ultimately changing its orientation. SIA can arise from an asymmetric doping of the device. In this case, the device also possesses an intrinsic electric field, which can be of practical use for applications. Indeed, an external field can be applied to tune the Rashba field, achieving spin manipulation. This opportunity has a strong impact in spintronics devices, such as the spin-FET, where the gate voltage selects the orientation of the spin and switch between on/off states I carried out photoluminescence (PL) investigations on a stack of 50 Ge/Si0.15Ge0.85 QWs grown within the intrinsic region of a p-i-n diode. The asymmetric doping introduces the SIA, necessary for achieving electrical manipulation of the spin. Via a pair of Al contacts, I was also able to study the effect of a tunable external electric field on the spin population via continuous-wave as well as time-resolved PL. Additionally, a power dependent analysis unveiled a strong effect of the light pump on the polarization I also performed PL measurements on a single modulation-doped Ge0.91Sn0.09/Ge QW. The band edge profile confines holes in the well, resulting in the formation of a two-dimensional hole gas. The asymmetric structure introduces the SIA and allows for the observation of spin-to-charge conversion mechanisms in this 2D system. I patterned a Hall bar on the sample and performed inverse spin-Hall effect measurements, extracting the spin-Hall angle. I also performed magneto-optics measurement, namely the Hanle effect, to unveil the carrier lifetime (T) of the material, which is in the ns regime at 10 K. This optical technique was applied for the first time to group IV materials in Ge1-xSnx epilayers (below), and was extended also to the QW system, proving it to be a reliable and easy method to determine T I have also studied Ge1-xSnx epilayers. The Sn content was varied from 0 to 10 %, while the compressive strain ensured an indirect bandgap nature. I applied Hanle effect to extract T and I unveiled a non-trivial behaviour with the Sn content, whose origin is ascribed to the presence of crystal flaws possibly due to the strong out-of-equilibrium growth conditions required for the realization of Sn-rich Ge1-xSnx samples In conclusion, this thesis is devoted to an all-optical investigation of SOC in heterostructures of group IV materials. The results obtained here are a step forwards in the investigation of spin dynamics of electrons in group IV and pave the way to future exploration of electrical-optical manipulation of spins in quantum technologies based on spin-photon interaction such as spin-FETs and spin-lasers

This thesis examined two-dimensional ferroelectric materials and their applications using density functional theory calculations. The research has revealed several novel applications for 2D ferroelectric materials. It illustrated that ferroelectric materials can be used to modify electronic, photocatalytic and magnetic properties of two-dimensional materials. In addition to exploring applications, new two-dimensional ferroelectric material which exhibits metallic properties was discovered through high through output search. Two-dimensional ferroelectric metals are extremely rare and only handful of materials were ever discovered.

Thesis (Ph.D.)--University of Nebraska-Lincoln, 2009.
Title from title screen (site viewed February 25, 2010). PDF text: ix, 227 p. : ill. (chiefly col.) ; 12 Mb. UMI publication number: AAT 3379026. Includes bibliographical references. Also available in microfilm and microfiche formats.

碩士
國立臺灣師範大學
物理學系
104
We use E-beam lithography and Photo lithography to make slim FM/Normal metal heterostructures.Microwave signal entered by microstrip or coplanar waveguide (CPW）and we success measure ferromagnetic resonanceand (FMR) signal. When FM/Normal metal heterostructures occur ferromagnetic resonanceand,the spin current continuously flow to normal metal because of spin pumping effect (SPE).Then we use FMR signal to analysis saturated magnetization and Gilbert damp parameter . Compare single ferromagnetic layer and FM/Normal metal heterostructures,we find Gilbert damp parameter of heterostructures larger than of single ferromagnetic layer.This result make we know that spin current was produced in FM/Normal metal heterostructures. However , spin current can’t measure directly. But we can measure charge current that resulting in inverse spin Hall effect (ISHE) caused by spin–orbit interaction (SOC). In the future, Our experiment will add DC pad in order to detecting DC signal. Then we will measure ISHE and spin rectification effect (SRE) signal. In order to distinguishing ISEH and SRE signal, we will use this method [1] in room temperature and this method [2] in low temperature (< 1.5K).

Thesis (Ph. D.)--Florida State University, 2006.
Advisor: Stephan von Molnar, Florida State University, College of Arts and Sciences, Dept. of Physics. Title and description from dissertation home page (viewed June 9, 2006). Document formatted into pages; contains xiv, 93 pages. Includes bibliographical references.

The goal of this dissertation is to introduce my study on exotic materials in two dimensional world, not only to the well-trained researchers in this field but also to the beginners of condensed matter experiment. I hope this material to be a good guide for those of who paves the way of spintronics and valleytronics The first chapter will give you the introduction to two dimensional materials - Graphene and Monolayer Transition Metal DiChalcogenide (TMDC). The second chapter introduces some toolkits on optical techniques on condensed matter experiment, from very basics for everyone to the advanced for main projects of this work. They include Reflection Contrast, Raman Spectroscopy, Photoluminescence, and Pump Probe Spectroscopy. Chapter three will be review on several literature which are prerequisites for understanding and getting inspiration for this work. They are on the spin-valley indexes of carriers in TMDC, interlayer charge transfer in TMDC heterostructre, valley Hall effect, etc. Chapter four will focus on the first half of main project, “Charge and Spin-Valley Transfer in Transition Metal Dichalcogenide Heterostructure”. Starting from the fabrication of heterostructure samples for our playground, we investigate the Interlayer Charge Transfer in our Heterostructure sample by ultrafast pump probe spectroscopy. We bring the polarization resolved version of the technique to study the Spin-Valley indexes conservation in the interlayer transferred charge, and analyze its physical meaning. We study which one is the dominantly preserved quantity among spin and valley by using the broadband pump probe spectroscopy which covers A and B excitonic energy in TMDC material. As all the measurement here are taken under room temperature condition, this work paves the way for possible real device application. Chapter five will cover the second half of main project, “Electrical control of spin and valley Hall effect in monolayer WSe2 transistors near room temperature”. Valley Hall effect device in praevious studies will be briefly revisited, and our new device is presented, using hole as carrier rather than electron for the robustness of valley index conservation, followed by optical experiment setting and results. Quantitative analyze on valley polarized carrier concentration and its depolarization time constant will follow. Chapter six will be a summary and direction to the future work.

The study of the co-existence of singlet superconductivity and ferromagnetism in bulk materials has been a long standing and intriguing problem in condensed matter physics since the superconductivity and ferromagnetism are quantum mechanically antagonistic to each other (i.e. parallel alignment of spins in the ferromagnet and Cooper pairs with oppositely aligned spins in the superconductor).Though it is incompatible to have the coexistence of singlet superconductivity and ferromagnetism in bulk compound, it is highly possible to artificially fabricate superconductor (S)/ferromagnet (F) heterostructures using various thin film deposition techniques and to study the interplay between the two antagonistic quantum phases over their characteristic length scales. The mutual interaction between the two competing order parameters at the interface in hybrid S/F heterostructures give rise to a variety of novel exotic physical phenomena. Moreover, the spin polarized transport and tunneling experiments in S/F heterostructures seem to be very much useful for providing important information on the spin dependent electronic properties of high Tc superconductors below and above the transition temperature. This can help a lot to understand the long debated unusual electronic properties and pairing mechanism of high Tc superconductors. In addition to the rich fundamental aspects buried in the study of S/F heterostructures, one can also use the spin dependent properties of high Tc superconductors in S/F heterostructures to design new spintronics devices from the application point of view. In this thesis an attempt is made to understand the spin polarized electron transport across S/F heterostructures where the superconductor used is YBa2Cu3O7-δand the ferromagnets are La0.5Sr0.5CoO3, La0.7Sr0.3MnO3, and La0.7Ca0.3MnO3. In addition, the magnetic properties of the La1-x SrxCoO3 system is also investigated in detail. The thesis is organized in six chapters and a brief summary of each chapter is given below. Chapter1 gives a brief introduction to the superconductivity, ferromagnetism and the interplay between superconductivity and ferromagnetism at the interface of S/F heterostructures. It also describes various exotic phenomena and the proximity effect that emerges at the S/F interface due to competing interactions. In addition, it also includes a discussion on various types of indirect magnetic interactions and basic idea about the spin glass ordering in magnetic materials. Chapter 2 outlines the basic principles of various experimental techniques employed for the work presented in this thesis. Chapter 3 describes an extensive magnetic and magnetotransport study of the La1-xSrxCoO3 system to understand the manifestation of various magnetic phases associated with it. The first section of this chapter aims at understanding the phase separation scenario in La0.85Sr0.15CoO3. Since the magnetic behavior of La0.85Sr0.15CoO3 is in the border area of spin glass (SG) and ferromagnetic (F) region in the x-T phase diagram; it has been subjected to a controversial debate for the last several years; while some groups show evidence for magnetic phase separation (PS), others show SG behavior. However, the experimental results presented in this thesis clearly demonstrate that the instability towards PS with inhomogeneous states or competing phases in La0.85Sr0.15CoO3 is not inherent or intrinsic to this compound; rather it is a consequence of the heat treatment condition during the preparation method. It is realized that low temperature annealed sample shows PS whereas the high temperature annealed sample shows the characteristics of canonical SG behavior. The second section of this chapter deals with a detailed study about the possible existence of various magnetic phases of La1-xSrxCoO3 in the range 0 ≤x ≤0.5. The dc magnetization study for x ≥0.18 exhibits the characteristic of ferromagnetic like behavior and for x<0.18, the SG behavior. More strikingly, the dc magnetization studies for x<0.18 rules out the existence of any ferromagnetic correlation that gives rise to irreversible line in the spin glass regime. The ac susceptibility study for x<0.18, exhibits a considerable frequency dependent peak shift, time-dependent memory effect, and the characteristic spin relaxation time scale τo ~10-13s, all pointing towards the characteristics of SG behavior. On the other hand, the ac susceptibility study in the higher doping ferromagnetic side exhibits the coexistence of glassy and ferromagnetic behavior. The glassiness is interpreted in terms of inter-cluster interaction. The reciprocal susceptibility vs. T plot in the paramagnetic side adheres strictly to Curie-Weis behavior and does not provide any signature for the pre-formation of ferromagnetic clusters well above the Curie temperature. The magnetotransport study reveals a cross over from metallic behavior to semiconducting like behavior for x ≤0.18 and the system exhibits a peak in MR in the vicinity of Tc on the metallic side and a large value of MR at low temperature on the semiconducting side. Such high value of MR in the semiconducting spin glass regime is strongly believed due to spin dependent part of random potential distribution. Based on the present experimental findings, a revised phase diagram has been constructed and each phase has been characterized with its associated properties. Chapter 4 deals with a comprehensive study of thickness dependent structural, magnetic and magnetotransport properties of oriented La0.5Sr0.5CoO3 thin films grown on LaAlO3 by pulsed laser deposition. The films are found to undergo a reduction in Curie temperature with decrease in film thicknesses and it is primarily caused by the finite size effect since the finite scaling law holds good over the studied thickness range. The contribution from strain induced suppression of the Curie temperature with decreasing film thickness is ruled out since all the films exhibit a constant out of plane tensile strain (0.5%) irrespective of their thickness. The coercivity of the films is observed to be an order of magnitude higher than that of the bulk. This is attributed to the local variation of the internal strain that introduces strong pinning sites (via. magnetoelastic interaction) for the magnetization reversal. In addition, an increase in the electrical resistivity and coercivity is observed with decrease in film thickness and it is strongly believed to be due to the interface effect. Chapter5 reports on the investigation of the effect of ferromagnetic layer on (i) pair breaking effect and (ii) vortex dynamics in different superconducting(S)/ ferromagnetic (F) bi-layers grown by pulsed laser deposition. The current (I) dependent electrical transport studies in the S/F bi-layers exhibit a significant reduction in the superconducting transition temperature with the increase in applied current as compared to single YBa2Cu3O7-δlayer and it follows I2/3 dependence in accordance with the pair breaking effect. Moreover, the superconducting transition temperature in YBa2Cu3O7-δ/ La0.7Sr0.3MnO3 bilayer is surprisingly found to be much larger than the YBa2Cu3O7-δ/La0.5Sr0.5CoO3. It appears that the current driven from a material with low spin polarization (-11%) like La0.5Sr0.5CoO3 can also suppress the superconductivity to a larger extent. This indicates that the degree of spin polarization of the ferromagnetic electrode is not the only criteria to determine the suppression of superconductivity by pair breaking effect in superconductor/ferromagnet hybrid structures; rather the transparency of the interface for the spin polarization, the formation of vortex state due to the stray field of ferromagnetic layer and the ferromagnetic domain patterns might play significant roles to determine such effect. More interestingly, the spin diffusion length in YBa2Cu3O7-δis found have a much longer length scale than that reported earlier in the study of F/ S heterostructures. The activation energy (U) for the vortex motion in S/F bilayers is reduced remarkably by the presence of the F layers. In addition, the U exhibits a logarithmic dependence on the applied magnetic field in the S/F bilayers suggesting the existence of decoupled 2D pancake vortices. This result is discussed in terms of the reduction in the effective S layer thickness and the weakening of the S coherence length due to the presence of F layers. Chapter 6 deals with the magnetotransport study on two different kind of F/S/F trilayers viz. La0.7Sr0.3MnO3/YBa2Cu3O7-δ/La0.7Sr0.3MnO3 and La0.5Sr0.5CoO3/YBa2Cu3O7-δ/La0.7Ca0.3MnO3 with changes in superconducting and ferromagnetic layer thickness. The activation energy for the vortex motion in F/S/F trilayer is found to decrease considerably as compared to S/F bilayer and it also exhibits a logarithmic dependence on magnetic field which gives the signature of existence of decoupled 2D pancake vortices. The magnetotransport study reveals that a much lower magnetic field is required to suppress the superconductivity in trilayer as compared to single YBCO layer. Moreover, the transport study also reveals that a threshold thickness of YBCO is required for the onset of superconductivity in trilayer structure and the onset of superconducting Tc increases with increase in YBCO thickness. More strikingly, a remarkable unconventional anisotropic superconducting Tc (Tc H║c-axis