Gotowe bibliografie tematyczne / Heterostructures for spintronics

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Gotowa bibliografia na temat „Heterostructures for spintronics”

Autor: Grafiati
Data publikacji: 6 września 2023

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Artykuły w czasopismach na temat "Heterostructures for spintronics"

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Sierra, Juan F., Jaroslav Fabian, Roland K. Kawakami, Stephan Roche i Sergio O. Valenzuela. "Van der Waals heterostructures for spintronics and opto-spintronics". Nature Nanotechnology 16, nr 8 (19.07.2021): 856–68. http://dx.doi.org/10.1038/s41565-021-00936-x.

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Dietl, Tomasz, Hideo Ohno i Fumihiro Matsukura. "Ferromagnetic Semiconductor Heterostructures for Spintronics". IEEE Transactions on Electron Devices 54, nr 5 (maj 2007): 945–54. http://dx.doi.org/10.1109/ted.2007.894622.

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Samarth, N., S. H. Chun, K. C. Ku, S. J. Potashnik i P. Schiffer. "Hybrid ferromagnetic/semiconductor heterostructures for spintronics". Solid State Communications 127, nr 2 (lipiec 2003): 173–79. http://dx.doi.org/10.1016/s0038-1098(03)00340-5.

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Gu, Youdi, Qian Wang, Weijin Hu, Wei Liu, Zhidong Zhang, Feng Pan i Cheng Song. "An overview of SrRuO3-based heterostructures for spintronic and topological phenomena". Journal of Physics D: Applied Physics 55, nr 23 (11.02.2022): 233001. http://dx.doi.org/10.1088/1361-6463/ac4fd3.

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Abstract SrRuO3 (SRO)-based heterostructures have attracted much attention for potential applications such as electrodes, oxide spintronics, topological electronics and electrocatalytic function mainly due to the strong spin–orbit coupling, itinerant ferromagnetism with 4d electrons, high metallic conductivity, perpendicular magnetic anisotropy and rich oxygen octahedral distortion of SRO. Here, this work aims to offer a timely and systematic review on SRO-based heterostructures for its emerging opportunities in oxide spintronic and topological electronic applications. We first present a brief summary of the current status in SRO-based heterostructures and describe the motivations of this review. We then briefly review the surface and interface modulation in SRO-based heterostructures, including oxygen octahedral distortions (antiferrodistortive mode and ferroelectric mode) engineering and ion defect engineering. In the third part, we discuss the spin-charge interconversion phenomena in SRO-based heterostructures, covering the inverse spin Hall effect and current-induced spin-orbit torques. Particularly, in the fourth part, we discuss the emergent topological Hall effect and underlying mechanism in SRO-based heterostructures, including the two-channel anomalous Hall effect and Berry phase manipulation. The fifth part presents the magnetic Weyl fermions and its electric-field control of SRO films. We finally conclude with a discussion of challenges and prospects of SRO-based heterostructures, which provides a guidance for exploring novel physical properties and designing multifunctional devices based on SRO.
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Gaj, Jan A., Joël Cibert, Andrzej Golnik, Mateusz Goryca, Elżbieta Janik, Tomasz Kazimierczuk, Łukasz Kłopotowski i in. "Semiconductor heterostructures for spintronics and quantum information". Comptes Rendus Physique 8, nr 2 (marzec 2007): 243–52. http://dx.doi.org/10.1016/j.crhy.2006.02.009.

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Trassin, Morgan. "Low energy consumption spintronics using multiferroic heterostructures". Journal of Physics: Condensed Matter 28, nr 3 (24.12.2015): 033001. http://dx.doi.org/10.1088/0953-8984/28/3/033001.

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Ranjbar, Sina, Satoshi Sumi, Kenji Tanabe i Hiroyuki Awano. "Large Perpendicular Exchange Energy in TbxCo100−x/Cu(t)/[Co/Pt]2 Heterostructures". Magnetochemistry 7, nr 11 (25.10.2021): 141. http://dx.doi.org/10.3390/magnetochemistry7110141.

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In order to realize a perpendicular exchange bias for applications, a robust and tunable exchange bias is required for spintronic applications. Here, we show the perpendicular exchange energy (PEE) in the TbxCo100−x/Cu/[Co/Pt]2 heterostructures. The structure consists of amorphous ferrimagnetic Tb–Co alloy films and ferromagnetic Co/Pt multilayers. The dependence of the PEE on the interlayer thickness of Cu and the composition of Tb–Co were analyzed. We demonstrate that the PEE can be controlled by changing the Cu interlayer thickness of 0.2 < tCu < 0.3 (nm). We found that PEE reaches a maximum value (σPw = 1 erg/cm2) at around x = 24%. We, therefore, realize the mechanism of PEE in the TbxCo100−x/Cu/[Co/Pt]2 heterostructures. We observe two competing mechanisms—one leading to an increase and the other to a decrease—which corresponds to the effect of Tb content on saturation magnetization and the coercivity of heterostructures. Sequentially, our findings show possibilities for both pinned layers in spintronics and memory device applications by producing large PEE and controlled PEE by Cu thickness, based on TbxCo100−x/Cu/[Co/Pt]2 heterostructures.
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Wang, Jiawei, Aitian Chen, Peisen Li i Sen Zhang. "Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure". Materials 14, nr 16 (17.08.2021): 4623. http://dx.doi.org/10.3390/ma14164623.

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Electric-field control of magnetism is significant for the next generation of large-capacity and low-power data storage technology. In this regard, the renaissance of a multiferroic compound provides an elegant platform owing to the coexistence and coupling of ferroelectric (FE) and magnetic orders. However, the scarcity of single-phase multiferroics at room temperature spurs zealous research in pursuit of composite systems combining a ferromagnet with FE or piezoelectric materials. So far, electric-field control of magnetism has been achieved in the exchange-mediated, charge-mediated, and strain-mediated ferromagnetic (FM)/FE multiferroic heterostructures. Concerning the giant, nonvolatile, and reversible electric-field control of magnetism at room temperature, we first review the theoretical and representative experiments on the electric-field control of magnetism via strain coupling in the FM/FE multiferroic heterostructures, especially the CoFeB/PMN–PT [where PMN–PT denotes the (PbMn1/3Nb2/3O3)1−x-(PbTiO3)x] heterostructure. Then, the application in the prototype spintronic devices, i.e., spin valves and magnetic tunnel junctions, is introduced. The nonvolatile and reversible electric-field control of tunneling magnetoresistance without assistant magnetic field in the magnetic tunnel junction (MTJ)/FE architecture shows great promise for the future of data storage technology. We close by providing the main challenges of this and the different perspectives for straintronics and spintronics.
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Yang, X., Z. Zhou, T. Nan, Y. Gao, G. M. Yang, M. Liu i N. X. Sun. "Recent advances in multiferroic oxide heterostructures and devices". Journal of Materials Chemistry C 4, nr 2 (2016): 234–43. http://dx.doi.org/10.1039/c5tc03008k.

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The increasing demand for realizing ultra-fast, compact, and ultra-low power electronics/spintronics has propelled the creation of novel multiferroic heterostructures which enable voltage control of magnetism in an energy efficient way.
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Chen, Xia, i Wenbo Mi. "Mechanically tunable magnetic and electronic transport properties of flexible magnetic films and their heterostructures for spintronics". Journal of Materials Chemistry C 9, nr 30 (2021): 9400–9430. http://dx.doi.org/10.1039/d1tc01989a.

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The mechanically tunable magnetic and electronic transport properties of flexible magnetic films and their heterostructures for spintronics have been reviewed, where the conclusion and outlook are also presented.
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Rozprawy doktorskie na temat "Heterostructures for spintronics"

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Slobodskyy, Taras. "Semimagnetic heterostructures for spintronics". Doctoral thesis, [S.l.] : [s.n.], 2006. http://deposit.ddb.de/cgi-bin/dokserv?idn=983425892.

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Al, Daboochah Hashim Mohammed Jabbar. "Ferromagnet [and] phthalocyanines heterostructures for spintronics applications". Thesis, Strasbourg, 2015. http://www.theses.fr/2015STRAE040.

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La mise en évidence d’effets de polarisation d’échange (“exchange bias”, EB) ouvre de nouvelles perspectives dans le domaine émergeant de la spintronique organique. Dans une première partie de la thèse, on étudie l’EB des systèmes Co/MPc et Py/MPc (M=Mn, Co, Fe, Zn) par magnétométrie. Pour tous ces systèmes, l’EB est observé avec des températures de blocage de 100K environ. Ces études sont complétées par des mesures de résonance ferromagnétique confirmant les valeurs du champ de polarisation. Dans une troisième partie, on étudie les propriétés magnétiques des tricouches Co/Pc/Co. Les cycles d’hystérèse présentent des marches indiquant un renversement séquentiel des couches de cobalt. A basse température, on observe de l’anisotropie unidirectionnelle pour les deux couches mais leurs champs de polarisation diffèrent
Observation of exchange bias (EB) phenomenon by using molecular materials as a pinninglayer open the horizon for tremendous perspective in the field of organic spintronics. Thefirst part of the thesis is devoted to the study of EB of Co/MPc and Py/MPc (M=Mn, Co, Fe,Zn) by static magnetometry. The existence of EB is evidenced in all Pc molecules with block-ing temperature around 100K. The second part is devoted to the study of EB by dynamicFMR measurements. The values of EB measured by this method are compatible with staticmagnetometry measurements. The third part is devoted to study magnetic properties of thetrilayer Co/Pc/Co systems. Hysteresis loops exhibit a stepped shape indicative of successivereversal of each layer. Low temperature loops show that both Co layers experience unidi-rectional anisotropy after field cooling, with differing bias fields
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Torresani, Patrick. "Hole quantum spintronics in strained germanium heterostructures". Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAY040/document.

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Le travail exposé dans cette thèse de doctorat présente des expériences à basse température dans le domaine de la spintronique quantique sur des hétérostructures à base de germanium. Tout d’abord, les avantages attendus du germaniumpour la spintronique quantique sont exposés, en particulier la faible interaction hyperfine et le fort couplage spin-orbite théoriquement prédits dans le Ge. Dans un second chapitre, la théorie des boites quantiques et systèmes à double boite sont détaillés, en se focalisant sur les concepts nécessaires à la compréhension des expériences décrites plus tard, c’est-à-dire les effets de charge dans les boites quantiques et double boites, ainsi que le blocage de spin de Pauli. Le troisième chapitre s’intéresse à l’interaction spin-orbite. Son origine ainsi que ses effets sur les diagrammes d’énergie de bande sont discutés. Ce chapitre se concentre ensuite sur les conséquences de l’interaction spin-orbite spécifiques aux gaz bidimensionnels de trous dans des hétérostructures de germanium, c’est-à-dire l’interaction spin-orbite Rashba, le mécanisme de relaxation de spin D’Yakonov-Perel ainsi que l’antilocalisation faible.Le chapitre quatre présente des mesures effectuées sur des nanofils coeur coquillede Ge/Si. Dans ces nanofils une boite quantique se forme naturellement et celui-ci est étudié. Un système à double boite quantiques est ensuite formé par utilisation de grilles électrostatiques, révélant ainsi du blocage de spin de Pauli.Dans le cinquième chapitre sont détaillés des mesures demagneto-conductance de gas de trous bidimensionnels dans des hétérostructures de Ge/SiGe contraints dont le puit quantique se situe à la surface. Ces mesuresmontrent de l’antilocalisation faible. Les temps de transport caractéristiques sont extraits ainsi que l’énergie de séparation des trous 2D par ajustement de courbe de la correction à la conductivité due à l’antilocalisation. De plus, les mesures montrent une suppression de l’antilocalisation par un champ magnétique parallèle au puit quantique. Cet effet est attribué à la rugosité de surface ainsi qu’à l’occupation virtuelle de sous-bandes inoccupées.Finalement, le chapitre six présente des mesures de quantisation de la conductancedans des hétérostructures de Ge/SiGe contraints dont le puit quantique est enterré. Tout d’abord, l’hétérostructure est caractérisée grâce à des mesures de magneto-conductance dans une barre de Hall. Ensuite, un second échantillon dessiné spécialement pour la réalisation de points de contact quantiques est mesuré. Celui-ci montre des marches de conductance. La dépendance en champ magnétique de ces marches est mesurée, permettant ainsi une extraction du facteur gyromagnétique de trous lourds dans du germanium
This thesis focuses on low temperature experiments in germaniumbased heterostructure in the scope of quantumspintronic. First, theoretical advantages of Ge for quantum spintronic are detailed, specifically the low hyperfine interaction and strong spin orbit coupling expected in Ge. In a second chapter, the theory behind quantum dots and double dots systems is explained, focusing on the aspects necessary to understand the experiments described thereafter, that is to say charging effects in quantum dots and double dots and Pauli spin blockade. The third chapter focuses on spin orbit interaction. Its origin and its effect on energy band diagrams are detailed. This chapter then focuses on consequences of the spin orbit interaction specific to two dimensional germaniumheterostructure, that is to say Rashba spin orbit interaction, D’Yakonov Perel spin relaxation mechanism and weak antilocalization.In the fourth chapter are depicted experiments in Ge/Si core shell nanowires. In these nanowire, a quantumdot formnaturally due to contact Schottky barriers and is studied. By the use of electrostatic gates, a double dot system is formed and Pauli spin blockade is revealed.The fifth chapter reports magneto-transport measurements of a two-dimensional holegas in a strained Ge/SiGe heterostructure with the quantum well laying at the surface, revealing weak antilocalization. By fitting quantumcorrection to magneto-conductivity characteristic transport times and spin splitting energy of 2D holes are extracted. Additionally, suppression of weak antilocalization by amagnetic field parallel to the quantum well is reported and this effect is attributed to surface roughness and virtual occupation of unoccupied subbands.Finally, chapter number six reportsmeasurements of quantization of conductance in strained Ge/SiGe heterostructure with a buried quantumwell. First the heterostructure is characterized by means ofmagneto-conductance measurements in a Hall bar device. Then another device engineered specifically as a quantum point contact is measured and displays steps of conductance. Magnetic field dependance of these steps is measured and an estimation of the g-factor for heavy holes in germanium is extracted
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Gustavsson, Fredrik. "Properties of Fe/ZnSe Heterostructures : A Step Towards Semiconductor Spintronics". Doctoral thesis, Uppsala : Acta Universitatis Upsaliensis : Univ.-bibl. [distributör], 2002. http://publications.uu.se/theses/91-554-5314-7/.

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Mouafo, Notemgnou Louis Donald. "Two dimensional materials, nanoparticles and their heterostructures for nanoelectronics and spintronics". Thesis, Strasbourg, 2019. http://www.theses.fr/2019STRAE002/document.

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Cette thèse porte sur l’étude du transport de charge et de spin dans les nanostructures 0D, 2D et les hétérostructures 2D-0D de Van der Waals (h-VdW). Les nanocristaux pérovskite de La0.67Sr0.33MnO3 ont révélé des magnétorésistances (MR) exceptionnelles à basse température résultant de l’aimantation de leur coquille indépendamment du coeur ferromagnétique. Les transistors à effet de champ à base de MoSe2 ont permis d’élucider les mécanismes d’injection de charge à l’interface metal/semiconducteur 2D. Une méthode de fabrication des h-VdW adaptés à l’électronique à un électron est rapportée et basée sur la croissance d’amas d’Al auto-organisés à la surface du graphene et du MoS2. La transparence des matériaux 2D au champ électrique permet de moduler efficacement l’état électrique des amas par la tension de grille arrière donnant lieu aux fonctionnalités de logique à un électron. Les dispositifs à base de graphene présentent des MR attribuées aux effets magnéto-Coulomb anisotropiques
This thesis investigates the charge and spin transport processes in 0D, 2D nanostructures and 2D-0D Van der Waals heterostructures (VdWh). The La0.67Sr0.33MnO3 perovskite nanocrystals reveal exceptional magnetoresistances (MR) at low temperature driven by their paramagnetic shell magnetization independently of their ferromagnetic core. A detailed study of MoSe2 field effect transistors enables to elucidate a complete map of the charge injection mechanisms at the metal/MoSe2 interface. An alternative approach is reported for fabricating 2D-0D VdWh suitable for single electron electronics involving the growth of self-assembled Al nanoclusters over the graphene and MoS2 surfaces. The transparency the 2D materials to the vertical electric field enables efficient modulation of the electric state of the supported Al clusters resulting to single electron logic functionalities. The devices consisting of graphene exhibit MR attributed to the magneto-Coulomb effect
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Benini, Mattia <1992&gt. "Fabrication and characterization of hybrid ferromagnetic-organic heterostructures for spintronics application". Doctoral thesis, Alma Mater Studiorum - Università di Bologna, 2022. http://amsdottorato.unibo.it/10358/1/Tesi%20dottorato%20Mattia%20Benini%20finale.pdf.

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Recent research in the field of organic spintronics highlighted the peculiar spin-dependent properties of the interface formed by an organic semiconductor (OSC) chemisorbed over a 3d ferromagnetic metal, also known as spinterface. The hybridization between the molecular and metallic orbitals, typically π orbitals of the molecule and the d orbitals of the ferromagnet, give rise to spin dependent properties that were not expected by considering the single components of interfaces, as for example the appearance of a magnetic moment on non-magnetic molecules or changes in the magnetic behavior of the ferromagnet. From a technological viewpoint these aspects provide novel engineering schemes for spin memory and for spintronics devices, featuring unexpected interfacial magnetoresistance, spin-filtering effects and even modulated magnetic anisotropy. Applications of these concepts to devices require nevertheless to transfer the spinterface effects from an ideal interface to room temperature operating thin films. In this view, my work presents for the first time how spinterface effects can be obtained even at room temperature on polycrystalline ferromagnetic Co thin films interfaced with organic molecules. The considered molecules were commercial and widely used in the field of organic electronics: Fullerene (C60), Gallium Quinoline (Gaq3) and Sexithiophene (T6). An increase of coercivity, up to 100% at room temperature, has been obtained on the Co ultra-thin films by the deposition of an organic molecule. This effect is accompanied by a change of in-plane anisotropy that is molecule-dependent. Moreover the Spinterface effect is not limited to the interfacial layer, but it extends throughout the whole thickness of the ferromagnetic layer, posing new questions on the nature of the 3d metal-molecule interaction.
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Lüders, Ulrike Anne. "Development and integration of oxide spinel thin films into heterostructures for spintronics". Doctoral thesis, Universitat Autònoma de Barcelona, 2005. http://hdl.handle.net/10803/3373.

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En esta memoria se describe el crecimiento, mediante pulverización catódica rf, de capas delgadas de NiFe2O4 y CoCr2O4 sobre distintos substratos y la subsiguiente caracterización magnética y eléctrica. El objetivo es integrar dichas capas en dispositivos magnetoelectrónicos tales como uniones túnel o filtros de spin.
Hemos descubierto que el crecimiento epitaxial permite estabilizar fases nuevas del óxido NiFe2O4, fases que no existen en la forma másiva, y que tienen propiedades remarcablemente distintas. Como por ejemplo: un aumento dramático de la magnetización o la posibilidad de modificar drásticamente sus propiedades de transporte, pudiéndose obtener capas aislantes -como es en forma cerámica- o conductivas. Se ha realizado un estudio sistemático de los efectos del espesor de la capa y de las condiciones de crecimiento sobre las propiedades de magnetotransporte y los mecanismos de crecimiento.
Argumentamos que el aumento de la magnetización es debido a la estabilización de una fase NiFe2O4 espinela que es parcialmente inversa, en la que los iones Ni2+ están distribuidos entre las dos posiciones disponibles (tetraédrica y octaédrica) de la estructura. En la forma masiva del material los iones Ni solo se encuentran en los sitios octaédricos. La introducción adicional de vacantes de oxígeno es probablemente la causa de la existencia de una configuración electrónica mixta Fe2+/3+ en la subred octaédrica y de la alta conductividad de las capas.
Hemos aprovechado la capacidad de obtener epitaxias de NiFe2O4 ferrimagnéticas conductoras o aislantes para integrarlas en dos distintos dispositivos magnetoelectrónicos: una unión túnel magnética y un filtro de spin.
Las capas conductoras de NiFe2O4 se han empleado como electrodos ferrimagnéticos-metálicos en uniones túnel. El otro electrodo magnético es (La,Sr)MnO3 y la barrera túnel SrTiO3. Se ha podido medir una magnetoresistencia túnel importante hasta temperaturas tan altas como 280K. Los valores de magnetoresistencia corresponden a una polarización de spin del NiFe2O4 de aproximadamente un 40%, que es prácticamente independiente de la temperatura. Estos resultados sugieren que la nueva fase conductora que hemos estabilizado es un candidato interesante como fuente de corriente polarizada en spin.
Por otra parte, el NiFe2O4 aislante se ha implementado, por primera vez, como barrera túnel en una heteroestructura de filtro de spin. El electrodo magnético es (La,Sr)MnO3 y el electrodo no magnético Au. Hemos observado una magnetoresistencia túnel que alcanza valores de hasta un 50%. A partir de estas medidas, hemos deducido detalles relevantes de la estructura electrónica de la fase parcialmente inversa de NiFe2O4.
Hemos crecido el óxido CoCr2O4 sobre distintos substratos, tales como MgO(001) y MgAl2O4(001). Hemos podido comprobar que este óxido presenta una pronunciada tendencia a un crecimiento 3D. Por esta razón, las superficies de la capa no son nunca suficientemente planas y no se pueden usar en heteroestructuras túnel.
Sin embargo hemos aprovechado esta característica para controlar el crecimiento de estas estructuras 3D y hemos conseguido la formación de objetos submicrónicos, autoorganizados con formas piramidales muy bien definidas. El estudio detallado del efecto de los parámetros de crecimiento nos ha permitido por una parte, dilucidar cuales son los mecanismos que llevan a una autoorganización tan perfecta y por otra determinar que, en las condiciones adecuadas, se pueden obtener templates totalmente faceteados con múltiples posibilidades para futuras aplicaciones.
In this thesis the growth of thin films of NiFe2O4 and CoCr2O4 by RF sputtering on different oxide substrates and the characterization of their magnetic and electric properties is reported. The aim is to integrate the films into spintronic devices namely magnetic tunnel junctions and spin filter.
It was found that the epitaxial growth of these films permits to stabilize new phases of NiFe2O4, which are not found for the bulk material and which show remarkably distinct properties. A strong enhancement of the saturation magnetization was found as well as the possibility to tune the electric behaviour of the films from insulating - like in bulk NiFe2O4 - to conducting. A systematic study of the influence of the film thickness and growth parameters on the properties of the films was carried out.
The enhancement of the saturation magnetization can be explained by a partially inversed spinel structure, where the Ni2+ ions are distributed over both available sites (octahedral and tetrahedral) of the structure, whereas in bulk NiFe2O4 the Ni2+ ions are only located on the octahedral sites of the structure. An additional introduction of oxygen vacancies causes the formation of mixed valence Fe2+/3+ chains on the octahedral sites and thus a hopping conductivity.
We have taken advantage of our ability to obtain epitaxial ferromagnetic NiFe2O4 films of insulating or conducting character to integrate them in two different spintronic devices: the magnetic tunnel junction and the spin filter.
The conducting NiFe2O4 was integrated in a magnetic tunnel junction as a magnetic electrode, with a (La,Sr)MnO3 counterelectrode and a SrTiO3 barrier. A magnetoresistance was measured up to a temperature of 280K. The values of the magnetoresistance correspond to a spin-polarization of 40%, which is basically constant in temperature. This results show that the conductive phase of NiFe2O4 is an interesting candidate for the application as a source of highly spin-polarized current.
On the other hand the insulating NiFe2O4 has been integrated into a spin filter as the magnetic barrier. The magnetic electrode was again (La,Sr)MnO3 and the counter electrode Au. A magnetoresistance up to 50% was observed. It was possible to deduce the band structure of NiFe2O4 from these measurements.
Thin films of CoCr2O4 were grown on different substrates like MgO(001) or MgAl2O4(001). It was found that the material shows a pronounced tendency to grow in a three dimensional manner. Thus the surface of these films is not sufficiently smooth to integrate them into tunnel contacts.
However, we were able to control the growth and morphology of the three dimensional structures leading to the formation of submicron self-organized pyramids with a square or elongated base. By a detailed study of the influence of the growth parameters it was possible to elucidate the underlying growth mechanisms and to obtain a fully faceted surface, which can be used in different applications.
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Luders, Ulrike. "Development and integration of oxide spinel thin films into heterostructures for spintronics". Phd thesis, INSA de Toulouse, 2005. http://tel.archives-ouvertes.fr/tel-00011342.

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Des couches minces à base de NiFe2O4 et CoCr2O4 ont été réalisées par pulvérisation cathodique sur des substrats d'oxydes, dans le but de les intégrer dans des hétérostructures pour l'électronique de spin.
Il a été montré que la croissance épitaxiale permet la stabilisation de nouvelles phases de NiFe2O4 qui n'existent pas sous forme massive. Ces phases présentent une augmentation forte du moment magnétique ou la possibilité d'ajuster les propriétés électriques du matériaux. Nous expliquons l'augmentation du moment magnétique par une inversion partielle des sites cationiques du NiFe2O4, matériau dans lequel les ions Ni2+ sont répartis entre les deux sites de la structure spinelle. Les lacunes en oxygène sont susceptibles de favoriser un comportement conducteur en induisant des états de valence mixte Fe2+/3+ dans les sites octaédriques.
Des couches minces de NiFe2O4 conducteur ont été utilisées comme électrodes ferrimagnétiques dans des jonctions tunnel. Une magnétorésistance significative a été mesurée, correspondant à une polarisation de spin de 40% du NiFe2O4 pratiquement constante en température. Le NiFe2O4 isolant a été incorporé avec succès en tant que barrière tunnel ferrimagnétique au sein de jonctions de type "filtre à spin", ce qui en fait la première structure de ce type réalisée avec des oxydes complexes.
Il a été mis en évidence que les couches minces de CoCr2O4 ont une tendance forte à croître de manière tridimensionnelle de la forme des objets pyramidaux aux facettes parfaitement définies. Cette croissance auto-organisée de nano-objets et sa dépendance à l'égard des conditions de dépôt été étudie en detail.
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Brangham, Jack T. "Spin Transport and Dynamics in Magnetic Heterostructures". The Ohio State University, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=osu1511351075684389.

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Qi, Yunong. "Semiclassical theory of spin transport in metallic and semiconductor heterostructures /". free to MU campus, to others for purchase, 2003. http://wwwlib.umi.com/cr/mo/fullcit?p3099624.

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Książki na temat "Heterostructures for spintronics"

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1946-, Zabel H., i Bader Samuel D, red. Magnetic heterostructures: Advances and perspectives in spinstructures and spintransport. Berlin: Springer Verlag, 2007.

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Blamire, M. G., i J. W. A. Robinson. Superconducting Spintronics and Devices. Redaktor A. V. Narlikar. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780198738169.013.14.

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This article reviews the current status of superconducting spintronics and devices, with particular emphasis on the critical issues and developments needed for their application to low-power quantum computing. It first provides an overview of conventional spintronics before discussing the rationale for superconducting spintronics. It then considers the proximity effects and Josephson junctions in superconductor-ferromagnet heterostructures, along with spin transport in the superconducting state. It also examines the issue of memory in superconducting spintronics, especially with respect to reading and writing magnetic data via superconducting states, and how to generate memory logic in such devices. Finally, it evaluates the potential application of superconductor-ferromagnetic insulator devices as thermoelectric systems in low-temperature electronic circuits.
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Zabel, H., i Samuel D. Bader. Magnetic Heterostructures: Advances and Perspectives in Spinstructures and Spintransport. Springer London, Limited, 2007.

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Narlikar, A. V., i Y. Y. Fu, red. Oxford Handbook of Nanoscience and Technology. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533060.001.0001.

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This volume highlights engineering and related developments in the field of nanoscience and technology, with a focus on frontal application areas like silicon nanotechnologies, spintronics, quantum dots, carbon nanotubes, and protein-based devices as well as various biomolecular, clinical and medical applications. Topics include: the role of computational sciences in Si nanotechnologies and devices; few-electron quantum-dot spintronics; spintronics with metallic nanowires; Si/SiGe heterostructures in nanoelectronics; nanoionics and its device applications; and molecular electronics based on self-assembled monolayers. The volume also explores the self-assembly strategy of nanomanufacturing of hybrid devices; templated carbon nanotubes and the use of their cavities for nanomaterial synthesis; nanocatalysis; bifunctional nanomaterials for the imaging and treatment of cancer; protein-based nanodevices; bioconjugated quantum dots for tumor molecular imaging and profiling; modulation design of plasmonics for diagnostic and drug screening; theory of hydrogen storage in nanoscale materials; nanolithography using molecular films and processing; and laser applications in nanotechnology. The volume concludes with an analysis of the various risks that arise when using nanomaterials.
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Gustavsson, Fredrik. Properties of Fe/Znse Heterostructures: A Step Towards Semiconductor Spintronics (Comprehensive Summaries of Uppsala Dissertations from the Faculty Science and Technology, 713). Uppsala Universitet, 2002.

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Magnetic Order and Coupling Phenomena: A Study of Magnetic Structure and Magnetization Reversal Processes in Rare-Earth-Transition-Metal Based Alloys and Heterostructures. Springer, 2014.

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Schubert, Christian. Magnetic Order and Coupling Phenomena: A Study of Magnetic Structure and Magnetization Reversal Processes in Rare-Earth-Transition-Metal Based Alloys and Heterostructures. Springer London, Limited, 2014.

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Schubert, Christian. Magnetic Order and Coupling Phenomena: A Study of Magnetic Structure and Magnetization Reversal Processes in Rare-Earth-Transition-Metal Based Alloys and Heterostructures. Springer International Publishing AG, 2016.

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Części książek na temat "Heterostructures for spintronics"

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Ohno, Hideo. "Ferromagnetic III–V Semiconductors and Their Heterostructures". W Semiconductor Spintronics and Quantum Computation, 1–30. Berlin, Heidelberg: Springer Berlin Heidelberg, 2002. http://dx.doi.org/10.1007/978-3-662-05003-3_1.

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Yasuda, Kenji. "Spintronic Phenomena in Magnetic/Nonmagnetic Topological Insulator Heterostructures". W Emergent Transport Properties of Magnetic Topological Insulator Heterostructures, 47–80. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-7183-1_4.

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Boschker, Hans, Zhaoliang Liao, Mark Huijben, Gertjan Koster i Guus Rijnders. "Interface Engineering in La0.67Sr0.33MnO3–SrTiO3 Heterostructures". W Oxide Spintronics, 33–64. Jenny Stanford Publishing, 2019. http://dx.doi.org/10.1201/9780429468193-2.

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Fina, I., i X. Martí. "Spintronic Functionalities in Multiferroic Oxide-Based Heterostructures". W Oxide Spintronics, 183–211. Jenny Stanford Publishing, 2019. http://dx.doi.org/10.1201/9780429468193-6.

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Gradauskaite, Elzbieta, Peter Meisenheimer, Marvin Müller, John Heron i Morgan Trassin. "12 Multiferroic heterostructures for spintronics". W Multiferroics, 371–412. De Gruyter, 2021. http://dx.doi.org/10.1515/9783110582130-012.

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Datt, Gopal. "Spinel ferrite-based heterostructures for spintronics applications". W Ferrite Nanostructured Magnetic Materials, 747–73. Elsevier, 2023. http://dx.doi.org/10.1016/b978-0-12-823717-5.00034-6.

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"Rashba Spin Splitting in III-Nitride Heterostructures and Quantum Wells". W Wide Bandgap Semiconductor Spintronics, 49–74. Jenny Stanford Publishing, 2016. http://dx.doi.org/10.1201/b20038-6.

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Kamalakar, M. Venkata, André Dankert i Saroj P. Dash. "Spintronics with Graphene and van der Waals Heterostructures". W Contemporary Topics in Semiconductor Spintronics, 241–58. WORLD SCIENTIFIC, 2017. http://dx.doi.org/10.1142/9789813149823_0009.

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Crowell, Paul A., i Scott A. Crooker. "Spin Transport in Ferromagnet/III–V Semiconductor Heterostructures". W Spintronics Handbook: Spin Transport and Magnetism, Second Edition, 269–315. CRC Press, 2019. http://dx.doi.org/10.1201/9780429434235-7.

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Wessels, B. "InMnAs Thin Films and Heterostructures". W Handbook of Spintronic Semiconductors, 181–92. Pan Stanford Publishing, 2010. http://dx.doi.org/10.1201/b11120-7.

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Streszczenia konferencji na temat "Heterostructures for spintronics"

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Gong, Cheng. "2D magnets, heterostructures, and spintronic devices". W Spintronics XIII, redaktorzy Henri-Jean M. Drouhin, Jean-Eric Wegrowe i Manijeh Razeghi. SPIE, 2020. http://dx.doi.org/10.1117/12.2570108.

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Vignale, Giovanni, i Steven S. L. Zhang. "Theory of unidirectional magnetoresistance in magnetic heterostructures". W Spintronics X, redaktorzy Henri Jaffrès, Henri-Jean Drouhin, Jean-Eric Wegrowe i Manijeh Razeghi. SPIE, 2017. http://dx.doi.org/10.1117/12.2275154.

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Wu, Chien-Te, i Shao-Hung Huang. "Majorana zero modes in ferromagnet-superconductor heterostructures". W Spintronics XIV, redaktorzy Henri-Jean M. Drouhin, Jean-Eric Wegrowe i Manijeh Razeghi. SPIE, 2021. http://dx.doi.org/10.1117/12.2594311.

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Rozhansky, Igor. "Resonant spin-dependent tunneling in heterostructures (Conference Presentation)". W Spintronics XI, redaktorzy Henri Jaffrès, Henri-Jean Drouhin, Jean-Eric Wegrowe i Manijeh Razeghi. SPIE, 2018. http://dx.doi.org/10.1117/12.2326768.

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Hayashi, Masamitsu. "Spin conversion effects in spin orbit heterostructures (Conference Presentation)". W Spintronics XI, redaktorzy Henri Jaffrès, Henri-Jean Drouhin, Jean-Eric Wegrowe i Manijeh Razeghi. SPIE, 2018. http://dx.doi.org/10.1117/12.2322985.

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Lendinez, Sergi, Yi Li, Weipeng Wu, Mojtaba Taghipour Kaffash, Qi Zhang, Wei Zhang, John E. Pearson i in. "Terahertz emission from magnetic thin film and patterned heterostructures". W Spintronics XII, redaktorzy Henri-Jean M. Drouhin, Jean-Eric Wegrowe i Manijeh Razeghi. SPIE, 2019. http://dx.doi.org/10.1117/12.2526194.

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Lau, Yong Chang, ZhenDong Chi i Masamitsu Hayashi. "Giant spin-orbit torque in BiSb/CoFeB heterostructures (Conference Presentation)". W Spintronics XII, redaktorzy Henri-Jean M. Drouhin, Jean-Eric Wegrowe i Manijeh Razeghi. SPIE, 2019. http://dx.doi.org/10.1117/12.2528147.

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Rader, Oliver. "Magnetic and nonmagnetic gaps in topological insulator heterostructures (Conference Presentation)". W Spintronics XII, redaktorzy Henri-Jean M. Drouhin, Jean-Eric Wegrowe i Manijeh Razeghi. SPIE, 2019. http://dx.doi.org/10.1117/12.2528309.

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Tanaka, Masaaki, Le Duc Anh, Nguyen Thanh Tu i Pham Nam N. Hai. "Fe-doped III-V ferromagnetic semiconductors and heterostructures (Conference Presentation)". W Spintronics XII, redaktorzy Henri-Jean M. Drouhin, Jean-Eric Wegrowe i Manijeh Razeghi. SPIE, 2019. http://dx.doi.org/10.1117/12.2529004.

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Guillet, Thomas, Giulio Gentille, Regina Galceran, Juan F. Sierra, Marius Costache, Matthieu Jamet, Frédéric Bonell i Sergio O. Valenzuela. "Spin-orbit torques in topological insulator / two-dimensional ferromagnet heterostructures". W Spintronics XIV, redaktorzy Henri-Jean M. Drouhin, Jean-Eric Wegrowe i Manijeh Razeghi. SPIE, 2021. http://dx.doi.org/10.1117/12.2604383.

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Raporty organizacyjne na temat "Heterostructures for spintronics"

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Krishnan, Kannan M. Exchange anisotropy, engineered coercivity and spintronics in atomically engineered L10 heterostructures. Office of Scientific and Technical Information (OSTI), sierpień 2011. http://dx.doi.org/10.2172/1113631.

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