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Artykuły w czasopismach na temat "Grazing incidence X-ray diffraction (GIXD)"
Takagi, Yasuo, i Masao Kimura. "Generalized grazing-incidence-angle X-ray diffraction (G-GIXD) using image plates". Journal of Synchrotron Radiation 5, nr 3 (1.05.1998): 488–90. http://dx.doi.org/10.1107/s090904959800123x.
Pełny tekst źródłaKainz, Manuel Peter, Lukas Legenstein, Valentin Holzer, Sebastian Hofer, Martin Kaltenegger, Roland Resel i Josef Simbrunner. "GIDInd: an automated indexing software for grazing-incidence X-ray diffraction data". Journal of Applied Crystallography 54, nr 4 (30.07.2021): 1256–67. http://dx.doi.org/10.1107/s1600576721006609.
Pełny tekst źródłaBreiby, Dag W., Oliver Bunk, Jens W. Andreasen, Henrik T. Lemke i Martin M. Nielsen. "Simulating X-ray diffraction of textured films". Journal of Applied Crystallography 41, nr 2 (8.03.2008): 262–71. http://dx.doi.org/10.1107/s0021889808001064.
Pełny tekst źródłaKhasanah, Khasanah, Isao Takahashi, Kummetha Raghunatha Reddy i Yukihiro Ozaki. "Crystallization of ultrathin poly(3-hydroxybutyrate) films in blends with small amounts of poly(l-lactic acid): correlation between film thickness and molecular weight of poly(l-lactic acid)". RSC Advances 7, nr 83 (2017): 52651–60. http://dx.doi.org/10.1039/c7ra10996b.
Pełny tekst źródłaHafidi, K., M. Azizan, Y. Ijdiyaou i E. L. Ameziane. "Ètude des interfaces SiO2/TiO2 et TiO2/SiO2 dans la structure SiO2/TiO2/SiO2/c-Si préparée par pulvérisation cathodique radio fréquence". Canadian Journal of Physics 85, nr 7 (1.07.2007): 763–76. http://dx.doi.org/10.1139/p07-053.
Pełny tekst źródłaIshida, Kenji, Akinori Kita, Kouichi Hayashi, Toshihisa Horiuchi, Shoichi Kal i Kazumi Matsushige. "Energy Dispersive Grazing Incidence X-ray Diffraction Study on Organic Thin Films EpitaxiaHy Grown on Crystalline Substrate". Advances in X-ray Analysis 39 (1995): 659–64. http://dx.doi.org/10.1154/s0376030800023090.
Pełny tekst źródłaGobato, Ricardo, Marcia Regina Risso Gobato, Alireza Heidari i Abhijit Mitra. "Unrestricted hartree-fock computational simulation in a protonated rhodochrosite crystal". Physics & Astronomy International Journal 3, nr 6 (6.11.2019): 220–28. http://dx.doi.org/10.15406/paij.2019.03.00187.
Pełny tekst źródłaHolzer, Valentin, Benedikt Schrode, Josef Simbrunner, Sebastian Hofer, Luisa Barba, Roland Resel i Oliver Werzer. "Impact of sample misalignment on grazing incidence x-ray diffraction patterns and the resulting unit cell determination". Review of Scientific Instruments 93, nr 6 (1.06.2022): 063906. http://dx.doi.org/10.1063/5.0088176.
Pełny tekst źródłaYoshida, Masahiro, Yasunori Kutsuma, Daichi Dohjima, Kenji Ohwada, Toshiya Inami, Noboru Ohtani, Tadaaki Kaneko i Jun'ichiro Mizuki. "Development of the Compact Furnace for the In Situ Observation under Ultra-High Temperature by Synchrotron x-Ray Surface Diffraction". Materials Science Forum 858 (maj 2016): 505–8. http://dx.doi.org/10.4028/www.scientific.net/msf.858.505.
Pełny tekst źródłaSilva, Gonçalo M. C., Pedro Morgado, Pedro Lourenço, Michel Goldmann i Eduardo J. M. Filipe. "Spontaneous self-assembly and structure of perfluoroalkylalkane surfactant hemimicelles by molecular dynamics simulations". Proceedings of the National Academy of Sciences 116, nr 30 (5.07.2019): 14868–73. http://dx.doi.org/10.1073/pnas.1906782116.
Pełny tekst źródłaRozprawy doktorskie na temat "Grazing incidence X-ray diffraction (GIXD)"
Baudot, Sophie. "MOSFETs contraints sur SOI : analyse des déformations par diffraction des rayons X et étude des propriétés électriques". Phd thesis, Grenoble, 2010. http://tel.archives-ouvertes.fr/tel-00557963.
Pełny tekst źródłaBaudot, Sophie. "MOSFETs contraints sur SOI : analyse des déformations par diffraction des rayons X et étude des propriétés électriques". Phd thesis, Grenoble, 2010. http://www.theses.fr/2010GRENY064.
Pełny tekst źródłaThe use of mechanical stress in the channel of MOSFETs on SOI is mandatory for sub-22 nm technological nodes. Its efficiency depends on the device geometry and design. The impact of different steps of the transistor fabrication process (active area patterning, metal gate formation, Source/Drain (S/D) implantation) on the strain in strained Silicon-On-Insulator (sSOI) materials has been measured by Grazing Incidence X-Ray Diffraction (GIXRD). The electrical performance enhancement of MOSFETs on sSOI has also been estimated with respect to SOI (100% mobility enhancement for long and wide nMOS (L=W=10 μm), 35% saturation drive current (IDsat) enhancement for short and narrow nMOS (L=25 nm, W=77 nm)). Innovative strained structures have then been studied. We demonstrate a 37% (18%) IDsat enhancement for pMOS on SOI (sSOI) with SiGe S/D compared to sSOI with Si S/D, for a 60 nm gate length and a 15 nm film thickness. GIXRD measurements, together with mechanical simulations, enabled the study and optimization of new structures using the stress transfer from an embedded and stressed layer (SiGe or nitride) toward the channel
Jukes, Paul Christian. "Grazing incidence x-ray diffraction and neutron reflection studies of semi-crystalline polymer surfaces and interfaces". Thesis, University of Sheffield, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.251303.
Pełny tekst źródłaSatapathy, Dillip Kumar. "Molecular-beam epitaxy growth and structural characterization of semiconductor-ferromagnet heterostructures by grazing incidence x-ray diffraction". [S.l.] : [s.n.], 2005. http://deposit.ddb.de/cgi-bin/dokserv?idn=982680724.
Pełny tekst źródłaSatapathy, Dillip Kumar. "Molecular-beam epitaxy growth and structural characterization of semiconductor-ferromagnet heterostructures by grazing incidence x-ray diffraction". Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2006. http://dx.doi.org/10.18452/15563.
Pełny tekst źródłaThe present work is devoted to the growth of the ferromagnetic metal MnAs on the semiconductor GaAs by molecular-beam epitaxy (MBE). The MnAs thin films are deposited on GaAs by molecular-beam epitaxy (MBE). Grazing incidence diffraction (GID) and reflection high-energy electron diffraction (RHEED) are used in situ to investigate the nucleation, evolution of strain, morphology and interfacial structure during the MBE growth. Four stages of the nucleation process during growth of MnAs on GaAs(001) are revealed by RHEED azimuthal scans. GID shows that further growth of MnAs films proceed via the formation of relaxed islands at a nominal thickness of 2.5 ML which increase in size and finally coalesce to form a continuous film. Early on, an ordered array of misfit dislocations forms at the interface releasing the misfit strain even before complete coalescence occurs. The fascinatingly complex nucleation process of MnAs on GaAs(0 0 1) contains elements of both Volmer-Weber and Stranski-Krastanov growth. A nonuniform strain amounting to 0.66%, along the [1 -1 0] direction and 0.54%, along the [1 1 0] direction is demonstrated from x-ray line profile analysis. A high correlation between the defects is found along the GaAs[1 1 0] direction. An extremely periodic array of misfit dislocations with a period of 4.95 +- 0.05 nm is formed at the interface along the [1 1 0] direction which releases the 7.5% of misfit. The inhomogeneous strain due to the periodic dislocations is confined at the interface within a layer of 1.6 nm thickness. The misfit along the [1 -1 0] direction is released by the formation of a coincidence site lattice.
Scherzer, Michael [Verfasser], Robert [Akademischer Betreuer] Schlögl, Ullrich [Akademischer Betreuer] Pietsch, Robert [Gutachter] Schlögl, Ullrich [Gutachter] Pietsch i Thorsten [Gutachter] Ressler. "Grazing incidence X-ray diffraction : application on catalyst surfaces / Michael Scherzer ; Gutachter: Robert Schlögl, Ullrich Pietsch, Thorsten Ressler ; Robert Schlögl, Ullrich Pietsch". Berlin : Technische Universität Berlin, 2018. http://d-nb.info/1163661481/34.
Pełny tekst źródłaJoshi, Gaurav Ravindra. "Elucidating sweet corrosion scales". Thesis, University of Manchester, 2015. https://www.research.manchester.ac.uk/portal/en/theses/elucidating-sweet-corrosion-scales(12a5be22-14fc-4add-b48b-a372652f3471).html.
Pełny tekst źródłaGasperini, Antonio Augusto Malfatti 1982. "Estudo do processo de formação de nanopartículas de GeSi em matriz de sílica por técnicas de luz síncrotron". [s.n.], 2011. http://repositorio.unicamp.br/jspui/handle/REPOSIP/277863.
Pełny tekst źródłaTese (doutorado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin
Made available in DSpace on 2018-08-19T08:06:03Z (GMT). No. of bitstreams: 1 Gasperini_AntonioAugustoMalfatti_D.pdf: 9911404 bytes, checksum: e5b4150f5a1f5f42c4d0e24b92e46c65 (MD5) Previous issue date: 2011
Resumo: Neste trabalho estudamos a formação e estrutura de nanopartículas (NPs) de GeSi encapsuladas em sílica, utilizando técnicas baseadas em luz síncrotron, complementadas com imagens de microscopia eletrônica de transmissão. Obtivemos a forma, o diâmetro médio e a dispersão de tamanhos usando espalhamento de raios X a baixos ângulos em incidência rasante (GISAXS). A partir dos dados de difração de raios X (XRD) foi possível obter a fase cristalina, o parâmetro de rede e o tamanho médio dos cristalitos. Estes resultados serviram como dados de entrada em um modelo para análise através da técnica de estrutura fina de absorção de raios X (EXAFS), a qual forneceu informações sobre a estrutura local na vizinhança dos átomos de Ge. Apesar dos resultados de cada uma das técnicas acima serem comumente analisados de forma separada, a combinação destas técnicas leva a uma melhor compreensão das propriedades estruturais das NPs. Através da combinação dos resultados tivemos acesso a informações tais como a deformação da rede cristalina (strain), a fração de átomos cm ambientes cristalino e amorfo, a fração de átomos de Ge diluída na matriz e a possibilidade de formação de estruturas do tipo core-shell cristalino-amorfo. Resultados adicionais como a origem do strain e a temperatura de solidificação das NPs, dentre outros, foram obtidos através de um experimento in situ de absorção de raios X em energia dispersiva (DXAS), inédito na análise deste sistema. Por fim, utilizamos as técnicas acima citadas para acompanhar a evolução dos parâmetros estruturais em amostras tratadas termicamente durante diferentes intervalos de tempo
Abstract: In this work we study the formation and structure of GeSi nanoparticles embedded in silica matrix using synchrotron-based techniques complemented by TEM images. Shape, average diameter and size dispersion were obtained from grazing incidence small angle X-ray scattering. X-ray diffraction measurements were used to obtain crystalline phase, lattice parameter and crystallite mean sizes. By using these techniques as input for extended X-ray absorption fine structure analysis, the local structure surrounding Ge atoms is investigated. Although the results for each of the methods mentioned above are usually analyzed separately, the combination of such techniques leads to an improved understanding of nanoparticle structural properties. Crucial indirect parameters that cannot be quantified by other means are accessed in our work, such as local strain, possibility of forming core-shell crystalline-amorphous structures, fraction of Ge atoms diluted in the matrix and amorphous and crystalline Ge fraction. Additional results as the origin of the strain and temperature of solidification of NPs, among others, were obtained through an in situ energy dispersive X-ray absorption experiment (DXAS), unheard in this system. Finally, we use the techniques mentioned above to monitor the evolution of the structural parameters of samples annealed during different time intervals
Doutorado
Física
Doutor em Ciências
Gilles, Bruno. "Etude par rayons X rasants des effets de l'implantation de silicium dans le silicium et de fer dans un grenat". Grenoble 2 : ANRT, 1986. http://catalogue.bnf.fr/ark:/12148/cb37597890r.
Pełny tekst źródłaRobach, Odile. "Étude in situ de la croissance de Ag sur MgO(001) et de Ni/Ag(001), et étude de la nitruration du GaAs par diffusion de rayons X en incidence rasante". Université Joseph Fourier (Grenoble ; 1971-2015), 1997. http://www.theses.fr/1997GRE10226.
Pełny tekst źródłaKsiążki na temat "Grazing incidence X-ray diffraction (GIXD)"
Flom, Erik B. Studies of the liquid-vapor interfaces of gallium and bismuth-gallium using grazing incidence x-ray diffraction. 1993.
Znajdź pełny tekst źródłaDeshpande, U. P., T. Shripathi i A. V. Narlikar. Iron-oxide nanostructures with emphasis on nanowires. Redaktorzy A. V. Narlikar i Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533053.013.23.
Pełny tekst źródłaCzęści książek na temat "Grazing incidence X-ray diffraction (GIXD)"
Ballard, B. L., P. K. Predecki i D. N. Braski. "Stress-Depth Profiles in Magnetron Sputtered Mo Films Using Grazing Incidence X-ray Diffraction (Gixd)". W Advances in X-Ray Analysis, 189–96. Boston, MA: Springer US, 1994. http://dx.doi.org/10.1007/978-1-4615-2528-8_25.
Pełny tekst źródłaPredecki, Paul, X. Zhu i B. Ballard. "Proposed Methods for Depth Profiling of Residual Stresses using Grazing Incidence X-Ray Diffraction (GIXD)". W Advances in X-Ray Analysis, 237–45. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-2972-9_28.
Pełny tekst źródłaSakata, Osami, i Masashi Nakamura. "Grazing Incidence X-Ray Diffraction". W Surface Science Techniques, 165–90. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-34243-1_6.
Pełny tekst źródłaTakahara, Atsushi, i Yuji Higaki. "X-Ray and Neutron Reflectivity and Grazing Incidence X-Ray Diffraction". W Molecular Soft-Interface Science, 129–39. Tokyo: Springer Japan, 2019. http://dx.doi.org/10.1007/978-4-431-56877-3_8.
Pełny tekst źródłaGarbauskas, Mary F., Donald G. LeGrand i Raymond P. Goehner. "Application of Grazing Incidence X-Ray Diffraction to Polymer Blends". W Advances in X-Ray Analysis, 373–77. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-2972-9_42.
Pełny tekst źródłaHuang, T. C. "Surface and Ultra-Thin Film Characterization by Grazing-Incidence Asymmetric Bragg Diffraction". W Advances in X-Ray Analysis, 91–100. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4613-9996-4_10.
Pełny tekst źródłaStabenow, Rainer, i Alfried Haase. "New Tools for Grazing Incidence Diffraction Measurements: Comparison of Different Primary and Secondary Beam Conditioners". W Advances in X-Ray Analysis, 87–94. Boston, MA: Springer US, 1997. http://dx.doi.org/10.1007/978-1-4615-5377-9_11.
Pełny tekst źródłaMüller-Buschbaum, P. "A Basic Introduction to Grazing Incidence Small-Angle X-Ray Scattering". W Applications of Synchrotron Light to Scattering and Diffraction in Materials and Life Sciences, 61–89. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-95968-7_3.
Pełny tekst źródłaPrévot, Geoffroy. "Direct Measurement of Elastic Displacement Modes by Grazing Incidence X-Ray Diffraction". W Mechanical Stress on the Nanoscale, 275–97. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527639540.ch13.
Pełny tekst źródłaSchamper, C., D. Dornisch, W. Moritz, H. Schulz, R. Feidenhans’l, M. Nielsen, F. Grey i R. L. Johnson. "Au Adsorption on Si(111) Studied by Grazing Incidence X-Ray Diffraction". W Springer Proceedings in Physics, 17–20. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-77144-6_4.
Pełny tekst źródłaStreszczenia konferencji na temat "Grazing incidence X-ray diffraction (GIXD)"
Clemens, B. M., A. P. Payne, T. C. Hufnagel, J. A. Bain i S. Brennan. "In-Situ Grazing Incidence X-Ray Diffraction During Sputter Deposition". W Physics of X-Ray Multilayer Structures. Washington, D.C.: Optica Publishing Group, 1992. http://dx.doi.org/10.1364/pxrayms.1992.wa4.
Pełny tekst źródłaBurlacov, I., R. B. Heimann i M. Müller. "Correlation of Plasma Process Conditions, Phase Content, and Photocatalytic Performance of Induction Plasma-Sprayed Titania Coatings". W ITSC2005, redaktor E. Lugscheider. Verlag für Schweißen und verwandte Verfahren DVS-Verlag GmbH, 2005. http://dx.doi.org/10.31399/asm.cp.itsc2005p1160.
Pełny tekst źródłaChen, Yu-Chen, Wen-Kai Chen, Jing-Chi Huang i Jia-Yang Juang. "Deposition of Highly Transparent and Conductive Films on Tilted Substrates by Atmospheric Pressure Plasma Jet". W ASME 2019 28th Conference on Information Storage and Processing Systems. American Society of Mechanical Engineers, 2019. http://dx.doi.org/10.1115/isps2019-7423.
Pełny tekst źródłaGoray, Leonid I., Alexander S. Dashkov, Viktor E. Asadchikov, Boris S. Roshchin, Arsen E. Muslimov i Vladimir M. Kanevsky. "Grazing-incidence X-ray reflectometry and fluorescence analysis of the metallic-coated sinusoidal diffraction grating". W 2019 Days on Diffraction (DD). IEEE, 2019. http://dx.doi.org/10.1109/dd46733.2019.9016515.
Pełny tekst źródłaImamov, Rafik M., O. G. Melikyan i Dmitry V. Novikov. "Control and characterization of semiconductor superlattices by grazing: incidence x-ray diffraction method". W International Conference on Microelectronics, redaktorzy Andrzej Sowinski, Jan Grzybowski, Witold T. Kucharski i Ryszard S. Romaniuk. SPIE, 1992. http://dx.doi.org/10.1117/12.131045.
Pełny tekst źródłaZhang, Yan, Fan Qichao, Li Jiawei, Zhang Hui, Huabin He, Chao Wang, Wei Gao i Ji Fang. "The using of x-ray grazing incidence diffraction technique in KDP surface characterization". W Advanced Fiber Laser Conference (AFL2022), redaktor Pu Zhou. SPIE, 2023. http://dx.doi.org/10.1117/12.2666983.
Pełny tekst źródłaOmi, H., T. Kawamura, Y. Kobayashi, S. Fujikawa, Y. Tsusaka, Y. Kagoshima i J. Matsui. "Inhomogeneous strain in thin silicon films analyzed by grazing incidence x-ray diffraction". W 2006 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2006. http://dx.doi.org/10.7567/ssdm.2006.i-8-3.
Pełny tekst źródłaWatanabe, K., Y. Kimura i K. Mukai. "Grazing Incidence X-ray Diffraction Measurements of Columnar InAs/GaAs Quantum-Dot Structures". W 2009 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2009. http://dx.doi.org/10.7567/ssdm.2009.h-1-8.
Pełny tekst źródłaTarrio, C., R. D. Deslattes, A. Caticha i J. Pedulla. "Trends in the X-Ray Diffraction of Multilayers". W Physics of X-Ray Multilayer Structures. Washington, D.C.: Optica Publishing Group, 1994. http://dx.doi.org/10.1364/pxrayms.1994.tua.4.
Pełny tekst źródłaVilloresi, P., E. Jannitti, P. Nicolosi, M. Perin i G. Tondello. "A Facility for the Measurement of the Soft X-ray Reflectivity Spectrum of XUV and Soft X-ray Mirrors". W Physics of X-Ray Multilayer Structures. Washington, D.C.: Optica Publishing Group, 1994. http://dx.doi.org/10.1364/pxrayms.1994.tuc.2.
Pełny tekst źródłaRaporty organizacyjne na temat "Grazing incidence X-ray diffraction (GIXD)"
Jones, L. Ruthenium-Platinum Thin Film Analysis Using Grazing Incidence X-ray Diffraction. Office of Scientific and Technical Information (OSTI), wrzesień 2004. http://dx.doi.org/10.2172/833117.
Pełny tekst źródłaFritz, S. Structural Characterization of a pentacene monolayer on an amorphous SiO2 substrate with grazing incidence x-ray diffraction. Office of Scientific and Technical Information (OSTI), luty 2004. http://dx.doi.org/10.2172/826751.
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