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Artykuły w czasopismach na temat "Graphene-Bilayer and trilayer"

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Das, Dhiman Kumar, Sushant Kumar Sahoo, Pranati Purohit i Sukadev Sahoo. "A study on the tensile force and shear strain of trilayer graphene". European Physical Journal Applied Physics 93, nr 3 (marzec 2021): 30404. http://dx.doi.org/10.1051/epjap/2021200357.

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The study of mechanical properties of graphene is one of the hottest topics in graphene physics. As the number of graphene layers increases, the mechanical property changes. Y. Liu et al., J. Mech. Phys. Solids, 60, 591 (2012) [1] have studied the tensile force and shear strain of bilayer graphene. They observed both the parameters increase as the length increases. In this paper, we study the same parameters for trilayer graphene. In trilayer graphene, we observe that with increasing length of the material, the tensile force increases and shear strain decreases. The change of mechanical behaviour from bilayer to trilayer graphene is a transition which would continue to higher number of layers with potential implications in near future.
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Alisultanov, Z. Z. "Large and tunable thermoelectric effect in single layer graphene on bilayer graphene". Modern Physics Letters B 29, nr 03 (30.01.2015): 1550003. http://dx.doi.org/10.1142/s0217984915500037.

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The conductivity and thermopower of a trilayer graphene based system have been studied within the framework of a simple model. It has been shown that kinks of the conductivity and peaks of the thermopower of the monolayer graphene formed on a tunable bilayer graphene appear near the edges of the band gap of the tunable bilayer graphene.
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Iqbal, M. Z., M. F. Khan, M. W. Iqbal i Jonghwa Eom. "Tuning the electrical properties of exfoliated graphene layers using deep ultraviolet irradiation". J. Mater. Chem. C 2, nr 27 (2014): 5404–10. http://dx.doi.org/10.1039/c4tc00522h.

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Deep ultraviolet irradiation tunes the electronic properties of mechanically exfoliated single-layer graphene, bilayer graphene, and trilayer graphene while maintaining their unique band structure and electrical properties.
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Ke, Feng, Yabin Chen, Ketao Yin, Jiejuan Yan, Hengzhong Zhang, Zhenxian Liu, John S. Tse, Junqiao Wu, Ho-kwang Mao i Bin Chen. "Large bandgap of pressurized trilayer graphene". Proceedings of the National Academy of Sciences 116, nr 19 (19.04.2019): 9186–90. http://dx.doi.org/10.1073/pnas.1820890116.

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Graphene-based nanodevices have been developed rapidly and are now considered a strong contender for postsilicon electronics. However, one challenge facing graphene-based transistors is opening a sizable bandgap in graphene. The largest bandgap achieved so far is several hundred meV in bilayer graphene, but this value is still far below the threshold for practical applications. Through in situ electrical measurements, we observed a semiconducting character in compressed trilayer graphene by tuning the interlayer interaction with pressure. The optical absorption measurements demonstrate that an intrinsic bandgap of 2.5 ± 0.3 eV could be achieved in such a semiconducting state, and once opened could be preserved to a few GPa. The realization of wide bandgap in compressed trilayer graphene offers opportunities in carbon-based electronic devices.
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Do, Thi-Nga, Cheng-Peng Chang, Po-Hsin Shih, Jhao-Ying Wu i Ming-Fa Lin. "Stacking-enriched magneto-transport properties of few-layer graphenes". Physical Chemistry Chemical Physics 19, nr 43 (2017): 29525–33. http://dx.doi.org/10.1039/c7cp05614a.

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Cobaleda, C., F. Rossella, S. Pezzini, E. Diez, V. Bellani, D. K. Maude i P. Blake. "Quantum Hall effect in bilayer and trilayer graphene". physica status solidi (c) 9, nr 6 (15.03.2012): 1411–14. http://dx.doi.org/10.1002/pssc.201100657.

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Chen, Xu-Dong, Wei Xin, Wen-Shuai Jiang, Zhi-Bo Liu, Yongsheng Chen i Jian-Guo Tian. "High-Precision Twist-Controlled Bilayer and Trilayer Graphene". Advanced Materials 28, nr 13 (29.01.2016): 2563–70. http://dx.doi.org/10.1002/adma.201505129.

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Yuan, Jianhui, i K. M. Liew. "Internal friction characteristic and analysis of in-plane natural frequency of trilayer complexes formed from graphenes and boron nitride nanosheets". RSC Adv. 4, nr 85 (2014): 45425–32. http://dx.doi.org/10.1039/c4ra08926j.

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The internal friction and in-plane natural frequency of a trilayer complex formed by a monolayer graphene sandwiched in the bilayer of boron nitride nanosheets (BN/G/BN) and graphenes (G/G/G) are studied by using molecular dynamics.
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Zhan, Da, Jia Xu Yan, Zhen Hua Ni, Li Sun, Lin Fei Lai, Lei Liu, Xiang Yang Liu i Ze Xiang Shen. "Bandgap-Opened Bilayer Graphene Approached by Asymmetrical Intercalation of Trilayer Graphene". Small 11, nr 9-10 (2.12.2014): 1177–82. http://dx.doi.org/10.1002/smll.201402728.

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SADEGHI, HATEF, M. T. AHMADI, S. M. MOUSAVI, RAZALI ISMAIL i MAHDIAR H. GHADIRY. "CHANNEL CONDUCTANCE OF ABA STACKING TRILAYER GRAPHENE NANORIBBON FIELD-EFFECT TRANSISTOR". Modern Physics Letters B 26, nr 08 (30.03.2012): 1250047. http://dx.doi.org/10.1142/s0217984912500479.

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In this paper, our focus is on ABA trilayer graphene nanoribbon (TGN), in which the middle layer is horizontally shifted from the top and bottom layers. The conductance model of TGN as a FET channel is presented based on Landauer formula. Besides the good reported agreement with experimental study lending support to our model, the presented model demonstrates that minimum conductivity increases dramatically by temperature. It also draws parallels between TGN and bilayer graphene nanoribbon, in which similar thermal behavior is observed. Maxwell–Boltzmann approximation is employed to form the conductance of TGN near the neutrality point. Analytical model in degenerate regime in comparison with reported data proves that TGN-based transistor will operate in degenerate regime like what we expect in conventional semiconductors. Moreover, our model confirms that in similar condition, the conductivity of TGN is less than bilayer graphene nanoribbon as reported in some experiments.
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Rozprawy doktorskie na temat "Graphene-Bilayer and trilayer"

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Cela, Devin Artan. "Studies of bilayer and trilayer graphene". Thesis, Massachusetts Institute of Technology, 2013. http://hdl.handle.net/1721.1/83814.

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Thesis (S.B.)--Massachusetts Institute of Technology, Dept. of Physics, 2013.
Cataloged from PDF version of thesis.
Includes bibliographical references (pages 69-76).
Graphene is a single 2-dimensional atomic layer of hexagonally packed carbon atoms. Graphene has a unique combination of thermal, mechanical, and electronic properties, making it a useful tool for learning new physics as well as a material with high potential for applications. Bilayer graphene (2LG) and trilayer graphene (3LG) share many of the interesting properties of its monolayer relative, but with several key differences. This thesis makes use of resonant Raman spectroscopy to characterize these systems and quantify their layer number as well as stacking order in different graphene flakes. Three distinct graphitic systems were studied: bilayer graphene with Bernal stacking, and trilayer graphene with both Bernal and rhombohedral stacking. A number of back-gated bilayer and trilayer graphene devices were created via the method of mechanical exfoliation. The type of stacking and number of layers was confirmed using resonant Raman spectroscopy. Electron beam lithography was used in combination with a positive PMMA resist in order to pattern samples. Metal was then evaporated onto samples to create electrical contacts for use in gated measurements. These samples, along with my procedure, will be used for future measurement by members of the Dresselhaus research group. These gated graphene devices will be used with gate-modulated resonant Raman spectroscopy (GMMRS) in order to explore the electron-phonon properties of AB 2LG, ABA 3LG, and ABC 3LG graphene.
by Devin Artan Cela.
S.B.
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Taychatanapat, Thiti. "From Hopping to Ballistic Transport in Graphene-Based Electronic Devices". Thesis, Harvard University, 2013. http://dissertations.umi.com/gsas.harvard:10815.

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This thesis describes electronic transport experiments in graphene from the hopping to the ballistic regime. The first experiment studies dual-gated bilayer graphene devices. By applying an electric field with these dual gates, we can open a band gap in bilayer graphene and observe an increase in resistance of over six orders of magnitude as well as a strongly non-linear behavior in the transport characteristics. A temperature-dependence study of resistance at large electric field at the charge neutrality point shows the change in the transport mechanism from a hopping dominated regime at low temperature to a diffusive regime at high temperature.
Physics
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Poumirol, Jean-Marie. "Etude des propriétés électroniques du graphène et des matériaux à base de graphène sous champs magnétiques intenses". Thesis, Toulouse, INSA, 2011. http://www.theses.fr/2011ISAT0012/document.

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Cette thèse présente des mesures de transport électronique dans des systèmes bi-dimensionels et uni-dimensionels à base de graphène sous champ magnétique pulsé (60T). L'objectif de ces travaux consiste à sonder la dynamique des porteurs de charge en modifiant la densité d'états du système par l'application d'un champ magnétique. Une première partie est consacrée à l'étude de l'influence des îlots électrons-trous sur les propriétés de transport du graphène au voisinage du point de neutralité de charge. Nous avons constaté l'apparition de fluctuations de la magnéto-résistance liée à la transition progressive des îlots de taille finie dans le régime quantique lorsque le champ magnétique augmente. Nous avons aussi montré que la variation de l'énergie de Fermi, liée à l'augmentation de la dégénérescence orbitale des niveaux de Landau, est directement responsable d'une modification du ratio entre électrons et trous. Dans une deuxième partie consacrée à l'étude des nanorubans de graphène, nous avons exploré deux gammes de largeur différentes. Dans les rubans larges (W>60nm), la quantification de la résistance a été observée révélant ainsi une signature évidente de la quantification du spectre énergétique en niveaux de Landau. Le confinement magnétique des porteurs de charge sur les bords des nanorubans a permis de mettre en évidence, pour la première fois, la levée de dégénérescence de vallée liée à la configuration armchair du ruban. Pour des rubans plus étroits (W<30nm), en présence de défauts de bord et d'impuretés chargées, la formation progressive des états de bords chiraux donne lieu à une magnéto-conductance positive quelque soit la densité de porteurs. Enfin, la dernière partie traite du magnéto-transport dans le graphene multi-feuillet. En particulier, nous avons observé l'effet Hall quantique dans les systèmes tri-couche de graphène. Une étude comparative des résultats expérimentaux avec des simulations numériques a permis de déterminer l'empilement rhombohedral des trois couches de graphene constituant l'échantillon
This thesis presents transport measurements on two-dimensional and one-dimensional graphene-based systems under pulsed magnetic field (60T). The objective of this work is to probe the dynamics of charge carriers by changing the density of states of the system by applying a strong magnetic field. The first part is devoted to the study of the influence of electron-hole pockets on the transport properties of graphene near the charge neutrality point. We found the appearance of fluctuations in the magneto-resistance due to the progressive transition of the electron/hole puddles of finite size in the quantum regime as the magnetic field increases. We have also shown that the variation of the Fermi energy, due to the increase of orbital Landau level degeneracy, is directly responsible of a change in the electron and hole ratio. The second part is devoted to the study of graphene nano-ribbons, we explored two different ranges of width. In the broad nano-ribbons of width W larger than 60 nm, the quantification of the resistance is observed, revealing a clear signature of the quantization of the energy spectrum into Landau levels. We show for the first time the effect of valley degeneracy lifting induced by the magnetic confinement of charge carriers at the edges of the armchair nano-ribbons. For narrower nano-ribbons (W <30 nm) in presence of edge defects and charged impurities, the progressive formation of chiral edge states leads to a positive magneto-conductance whatever the carrier density. Finally, the last part of this thesis deals with magneto-transport fingerprints in multi-layer graphene as we observed the quantum Hall effect in tri-layer graphene. A comparative study of the experimental results with numerical simulations was used to determine the rhombohedral stacking of three layers of graphene in the sample
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Streszczenia konferencji na temat "Graphene-Bilayer and trilayer"

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Lee, Yongjin, Kevin Myhro, David Tran, Nathaniel Gilgren, Jairo Velasco, Wenzhong Bao, Michael Deo i Chun Ning Lau. "Band gap and correlated phenomena in bilayer and trilayer graphene". W SPIE Defense, Security, and Sensing, redaktorzy Thomas George, M. Saif Islam i Achyut K. Dutta. SPIE, 2013. http://dx.doi.org/10.1117/12.2016521.

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Oviroh, Peter Ozaveshe, Sunday Temitope Oyinbo, Sina Karimzadeh i Tien-Chien Jen. "Multilayer Separation Effects on MoS2 Membranes in Water Desalination". W ASME 2021 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2021. http://dx.doi.org/10.1115/imece2021-69156.

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Abstract Climate change and its related effects are imposing severe stress on the current freshwater supplies. This has been exacerbated due to the growth in population, rapid industrialization, and increased energy demand. Increased water requirement is a global challenge. Although more than 70% of the Earth is covered by water, much of it is unusable for human use. Freshwater reservoirs, ponds, and subterranean aquifers account for just 2.5% of the world’s overall freshwater availability. Unfortunately, these water supplies are not very unevenly spread. Therefore, the need to augment these supplies through the desalination of seawater or brackish water. Reverse osmosis (RO) is currently the most widespread method of desalination. However, the unit cost of water is still high partly due to the thin-film composite (TFC) polymer membranes used in the current desalination system. Thus the need for low-cost nanomaterials for Water Desalination and Purification. A promising way to meet this demand is to use two-dimensional (2D) nanoporous materials such as graphene and MoS2 to minimize energy consumption during the desalination process. New nanotechnology methodologies that apply reverse osmosis have been developed. Among some of these technologies is using 2D materials such as graphene and MoS2, which have been studied extensively for water desalination. Single-layer nanoporous 2D materials such as graphene and MoS2 promises better filtrations in the water channel. Although single-layer MoS2 (SL_MoS2) membrane have much promise in the RO desalination membrane, multilayer MoS2 are simpler to make and more cost-efficient. Building on the SL_MoS2 membrane knowledge, we have used the molecular dynamics method (MD) to explore the effects of multilayer MoS2 in water desalination. This comparison is made as a function of the pore size, water flow rate and salt rejection. In addition, we also looked at the effect of the increased interlayer spacing between layers of the nanoporous 2D membrane and then made the comparison. The ions rejection follows the trend trilayer&gt; bilayer&gt; monolayer from results obtained, averaging over all three membrane types studied for the MoS2, the ions rejection follows the trend trilayer &gt; bilayer &gt; monolayer. We find that the thin, narrow layer separation plays a vital role in the successful rejection of salt ions in bilayers and trilayers membranes. These findings will help build and proliferate tunable nanodevices for filtration and other applications.
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de Freitas, Filipe P. R., David Steinberg i Eunezio A. Thoroh de Souza. "Study of Mechanically Exfoliated Monolayer, Bilayer, Trilayer and Multilayer Graphene as Saturable Absorber for Passive Erbium-Doped Fiber Laser Mode-Locking". W 2021 SBFoton International Optics and Photonics Conference (SBFoton IOPC). IEEE, 2021. http://dx.doi.org/10.1109/sbfotoniopc50774.2021.9461975.

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