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Artykuły w czasopismach na temat „GaAs solar cells”

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Data publikacji: 6 września 2023

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1

Jones, K. M., R. J. Matson, M. M. Al-Jassim i S. M. Vernon. "Defect generation and propagation in GaAs solar cells". Proceedings, annual meeting, Electron Microscopy Society of America 46 (1988): 926–27. http://dx.doi.org/10.1017/s0424820100106697.

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It is well known that dislocations have deleterious effects on the performance of minority carrier semiconductor devices. In a previous study(1), the results of an EBIC examination of GaAsP wide bandgap solar cells was reported. The effects of defects in the 106-108 cm-2 range on various cell parameters were investigated. However, the equally important 104-106 range was not studied. In this work, we report a study on defects in low bandgap (1.4 eV) GaAs cells in the 104-108 cm-2 range. These cells were grown by low pressure MOCVD on GaAs substrates. In order to introduce dislocations with such a wide range of densities, an intermediate mismatched layer of GaAs1_xPx was introduced into the structure (Fig. 1). Five different device-type structures were grown in which the P concentration (x) was varied from 2% to 32%. These concentrations correspond to a lattice mismatch of 7.3x10-4 and 1.2xl0-2respectively. As expected, the higher the P concentration the larger the mismatch being introduced into the system and therefore, the higher the defect density.

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2

Steiner, Myles A., Collin D. Barraugh, Chase W. Aldridge, Isabel Barraza Alvarez, Daniel J. Friedman, Nicholas J. Ekins-Daukes, Todd G. Deutsch i James L. Young. "Photoelectrochemical water splitting using strain-balanced multiple quantum well photovoltaic cells". Sustainable Energy & Fuels 3, nr 10 (2019): 2837–44. http://dx.doi.org/10.1039/c9se00276f.

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Strain-balanced GaInAs/GaAsP quantum wells were incorporated into the classical GaInP/GaAs tandem photoelectrochemical water splitting device to increase the range of photon absorption and achieve higher solar-to-hydrogen efficiencies.

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3

Tomasulo, Stephanie, Kevin Nay Yaung i Minjoo Larry Lee. "Metamorphic GaAsP and InGaP Solar Cells on GaAs". IEEE Journal of Photovoltaics 2, nr 1 (styczeń 2012): 56–61. http://dx.doi.org/10.1109/jphotov.2011.2177640.

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4

Wu, Shao-Hua, i Michelle L. Povinelli. "Solar heating of GaAs nanowire solar cells". Optics Express 23, nr 24 (25.09.2015): A1363. http://dx.doi.org/10.1364/oe.23.0a1363.

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5

Olson, J. M., A. Kibbler i T. Gessert. "GaInP/GaAs multijunction solar cells". Solar Cells 21, nr 1-4 (czerwiec 1987): 450–51. http://dx.doi.org/10.1016/0379-6787(87)90147-5.

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6

Courel, Maykel, Julio C. Rimada i Luis Hernández. "AlGaAs/GaAs superlattice solar cells". Progress in Photovoltaics: Research and Applications 21, nr 3 (9.10.2011): 276–82. http://dx.doi.org/10.1002/pip.1178.

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7

Woo, Seungwan, Geunhwan Ryu, Taesoo Kim, Namgi Hong, Jae-Hoon Han, Rafael Jumar Chu, Jinho Bae i in. "Growth and Fabrication of GaAs Thin-Film Solar Cells on a Si Substrate via Hetero Epitaxial Lift-Off". Applied Sciences 12, nr 2 (14.01.2022): 820. http://dx.doi.org/10.3390/app12020820.

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We demonstrate, for the first time, GaAs thin film solar cells epitaxially grown on a Si substrate using a metal wafer bonding and epitaxial lift-off process. A relatively thin 2.1 μm GaAs buffer layer was first grown on Si as a virtual substrate, and a threading dislocation density of 1.8 × 107 cm−2 was achieved via two In0.1Ga0.9As strained insertion layers and 6× thermal cycle annealing. An inverted p-on-n GaAs solar cell structure grown on the GaAs/Si virtual substrate showed homogenous photoluminescence peak intensities throughout the 2″ wafer. We show a 10.6% efficient GaAs thin film solar cell without anti-reflection coatings and compare it to nominally identical upright structure solar cells grown on GaAs and Si. This work paves the way for large-scale and low-cost wafer-bonded III-V multi-junction solar cells.

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8

Horng, Ray-Hua, Ming-Chun Tseng i Shui-Yang Lien. "Reliability Analysis of III-V Solar Cells Grown on Recycled GaAs Substrates and an Electroplated Nickel Substrate". International Journal of Photoenergy 2013 (2013): 1–9. http://dx.doi.org/10.1155/2013/108696.

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This study involved analyzing the reliability of two types of III-V solar cells: (1) III-V solar cells grown on new and recycled gallium arsenide (GaAs) substrates and (2) the III-V solar cells transferred onto an electroplated nickel (Ni) substrate as III-V thin-film solar cells by using a cross-shaped pattern epitaxial lift-off (CPELO) process. The III-V solar cells were grown on new and recycled GaAs substrates to evaluate the reliability of the substrate. The recycled GaAs substrate was fabricated by using the CPELO process. The performance of the solar cells grown on the recycled GaAs substrate was affected by the uneven surface morphology of the recycled GaAs substrate, which caused the propagation of these dislocations into the subsequently grown active layer of the solar cell. The III-V solar cells were transferred onto an electroplated Ni substrate, which was also fabricated by using CPELO technology. The degradation of the III-V thin-film solar cell after conducting a thermal shock test could have been caused by microcracks or microvoids in the active layer or interface of the heterojunction, which resulted in the reduction of the external quantum efficiency response and the increase of recombination loss.

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9

Simon, John, Christiane Frank-Rotsch, Karoline Stolze, Matthew Young, Myles A. Steiner i Aaron J. Ptak. "GaAs solar cells grown on intentionally contaminated GaAs substrates". Journal of Crystal Growth 541 (lipiec 2020): 125668. http://dx.doi.org/10.1016/j.jcrysgro.2020.125668.

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10

Horng, Ray-Hua, Yu-Cheng Kao, Apoorva Sood, Po-Liang Liu, Wei-Cheng Wang i Yen-Jui Teseng. "GaInP/GaAs/poly-Si Multi-Junction Solar Cells by in Metal Balls Bonding". Crystals 11, nr 7 (24.06.2021): 726. http://dx.doi.org/10.3390/cryst11070726.

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In this study, a mechanical stacking technique has been used to bond together the GaInP/GaAs and poly-silicon (Si) solar wafers. A GaInP/GaAs/poly-Si triple-junction solar cell has mechanically stacked using a low-temperature bonding process which involves micro metal In balls on a metal line using a high-optical-transmission spin-coated glue material. Current–voltage measurements of the GaInP/GaAs/poly-Si triple-junction solar cells have carried out at room temperature both in the dark and under 1 sun with 100 mW/cm2 power density using a solar simulator. The GaInP/GaAs/poly-Si triple-junction solar cell has reached an efficiency of 24.5% with an open-circuit voltage of 2.68 V, a short-circuit current density of 12.39 mA/cm2, and a fill-factor of 73.8%. This study demonstrates a great potential for the low-temperature micro-metal-ball mechanical stacking technique to achieve high conversion efficiency for solar cells with three or more junctions.

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11

France, Ryan M., Jennifer Selvidge, Kunal Mukherjee i Myles A. Steiner. "Optically thick GaInAs/GaAsP strain-balanced quantum-well tandem solar cells with 29.2% efficiency under the AM0 space spectrum". Journal of Applied Physics 132, nr 18 (14.11.2022): 184502. http://dx.doi.org/10.1063/5.0125998.

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GaAs is often used as a multijunction subcell due to its high material quality on GaAs substrates, despite having a non-optimal bandgap. The bandgap can be beneficially reduced using many layers of thin, strain-balanced GaInAs in a superlattice or quantum well device, but achieving excellent carrier collection without increased recombination has proven challenging. Here, we develop and demonstrate high performance, optically thick GaInAs/GaAsP strain-balanced solar cells. Excellent material quality is achieved in thick superlattices by using growth conditions that limit progressive thickness and composition fluctuations. Bandgap-voltage offsets as low as 0.31 V are shown in superlattice cells using thin, highly strained GaP barriers. Optically thick superlattice cells with over 2500 nm of total GaInAs in the depletion region are developed, enabling 3.8 mA/cm2 of extra photocurrent beyond the GaAs band edge under the AM0 space spectrum. Optimized superlattice solar cells are incorporated into two-junction devices that achieve 29.2% efficiency under the AM0 space spectrum due to their improved bandgap combination and high subcell voltages.

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12

Trojnar, Anna H., Christopher E. Valdivia, Ray R. LaPierre, Karin Hinzer i Jacob J. Krich. "Optimizations of GaAs Nanowire Solar Cells". IEEE Journal of Photovoltaics 6, nr 6 (listopad 2016): 1494–501. http://dx.doi.org/10.1109/jphotov.2016.2600339.

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13

Araújo, G. L., A. Martí i C. Algora. "Back‐contacted emitter GaAs solar cells". Applied Physics Letters 56, nr 26 (25.06.1990): 2633–35. http://dx.doi.org/10.1063/1.102859.

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14

Araujo, G. L., i A. Marti. "Limiting efficiencies of GaAs solar cells". IEEE Transactions on Electron Devices 37, nr 5 (maj 1990): 1402–5. http://dx.doi.org/10.1109/16.108204.

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15

Mariani, Giacomo, Ping-Show Wong, Aaron M. Katzenmeyer, Francois Léonard, Joshua Shapiro i Diana L. Huffaker. "Patterned Radial GaAs Nanopillar Solar Cells". Nano Letters 11, nr 6 (8.06.2011): 2490–94. http://dx.doi.org/10.1021/nl200965j.

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16

Takamoto, Tatsuya, Minoru Kaneiwa, Mitsuru Imaizumi i Masafumi Yamaguchi. "InGaP/GaAs-based multijunction solar cells". Progress in Photovoltaics: Research and Applications 13, nr 6 (2005): 495–511. http://dx.doi.org/10.1002/pip.642.

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17

Gupta, Nikhil Deep. "Comparison of Light Trapping Limits Derived Using Various Methods for Thin Film GaAs Solar Cells". Journal of Nanoscience and Nanotechnology 20, nr 6 (1.06.2020): 3939–42. http://dx.doi.org/10.1166/jnn.2020.17504.

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The paper discusses and compares the Lambertian limits for light trapping (LT) in GaAs active layer based thin film solar cells as described by different mathematical theories and expressions. The Lambertian limits for thin film GaAs solar cell provide the maximum efficiency that can be achieved through LT structures and also indicate the advantage that these structure can provide for the design of GaAs thin film solar cell structure. The purpose to discuss difference Lambertian limit expressions is to understand and predict, which limiting benchmark value is more suited for nano LT structures based GaAs active material solar cells, considering GaAs material properties. The paper also compares these calculated limiting values with different nano LT structures including photonic crystal structures based designs proposed by the author. The aim is to check how much close a particular proposed structure is to the Lambertian values, so that we can predict that which is more suitable design to get best efficiency out of the single junction GaAs material based structure. The paper discussed the three Lambertian theories including that of Yablonovitch, Green and Schuster.

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18

Kim, Kangho, Hoang Duy Nguyen, Sunil Mho i Jaejin Lee. "Enhanced Efficiency of GaAs Single-Junction Solar Cells with Inverted-Cone-Shaped Nanoholes Fabricated Using Anodic Aluminum Oxide Masks". International Journal of Photoenergy 2013 (2013): 1–5. http://dx.doi.org/10.1155/2013/539765.

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The GaAs solar cells are grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) and fabricated by photolithography, metal evaporation, annealing, and wet chemical etch processes. Anodized aluminum oxide (AAO) masks are prepared from an aluminum foil by a two-step anodization method. Inductively coupled plasma dry etching is used to etch and define the nanoarray structures on top of an InGaP window layer of the GaAs solar cells. The inverted-cone-shaped nanoholes with a surface diameter of about 50 nm are formed on the top surface of the solar cells after the AAO mask removal. Photovoltaic and optical characteristics of the GaAs solar cells with and without the nanohole arrays are investigated. The reflectance of the AAO nanopatterned samples is lower than that of the planar GaAs solar cell in the measured range. The short-circuit current density increased up to 11.63% and the conversion efficiency improved from 10.53 to 11.57% under 1-sun AM 1.5 G conditions by using the nanohole arrays. Dependence of the efficiency enhancement on the etching depth of the nanohole arrays is also investigated. These results show that the nanohole arrays fabricated with an AAO technique may be employed to improve the light absorption and, in turn, the conversion efficiency of the GaAs solar cell.

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19

Mintairov M. A., Evstropov V. V., Mintairov S. A., Nakhimovich M. V., Salii R.A., Shvarts M.Z. i Kalyuzhnyy N. A. "Increasing the efficiency of triple-junction solar cells due to the metamorphic InGaAs subcell". Technical Physics Letters 48, nr 13 (2022): 26. http://dx.doi.org/10.21883/tpl.2022.13.53388.18888.

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The efficiency of GaInP/GaAs/InxGa1-xAs triple-junction solar cells obtained by replacing (in the widely used "classical" GaInP / GaAs / Ge heterostructure) the lower germanium with InxGa1-xAs subcell formed using the metamorphic growth technology has been investigated. Based on an original approach, the optimal indium concentration in the narrow-gap subcell has been found. The main parameters of InxGa1-xAs subcells with an indium concentration from x=0.11 to 0.36 were determined and were used to calculate the IV characteristics of GaInP/GaAs/InxGa1-xAs solar cells. It has been determined that at x=0.28 the efficiency of the triple-junction solar cell increases by 3.4% (abs) in comparison with the "classical" solar cell, reaching a value of 40.3% (AM1.5D). Also it has been shown that the efficiency of such solar cells can be increased up to 41%. Keywords: Multi-junction solar cells, photoconverters, metamorphic buffer. M.Z.Shvarts,

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20

Jones, K. M., M. M. Al-Jassim, J. M. Olson, S. R. Kurtz, A. E. Kibbler i S. M. Vernon. "The characterization of Ga0.5In0.5P/GaAs solar cells grown on Si substrates". Proceedings, annual meeting, Electron Microscopy Society of America 48, nr 4 (sierpień 1990): 732–33. http://dx.doi.org/10.1017/s0424820100176794.

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Multijunction solar cells have the potential of achieving conversion efficiencies in excess of 30%. It has been recently demonstrated that Ga0.5In0.5P/GaAs tandem solar cells can achieve efficiencies higher than 27%, These devices are grown on GaAs substrates. However, there is an increasing need for a cheaper, lighter substrate with higher thermal conductivity than GaAs for space solar cell applications. In this work, we have investigated the structural and luminescent properties of GaAs/GaInP multilayers grown on Si substrates. All layers were grown by MOCVD on (100), n-type Si substrates misoriented by 2° towards (110). The TEM examination was performed in a Philips CM-30 TEM operating at 300 KeV.The first part of this study focussed on the growth of GaAs on Si for further use as a substrate for growing GaAs/GaInP cell structures. GaAs layers grown under standard MOCVD conditions exhibited dislocation densities in the 2-4 x 108 cm−2 range for 2μm thick layers. On the other hand, thermal cycle growth (TCG) gave rise to layers with significantly improved structural quality. This was carried out by several repetitions of deposition-annealing-cool down cycles during the growth. The effect of annealing on dislocation propagation is quite evident in TEM cross-sections (Fig. 1). The majority of defects are confined to a relatively thin region close to the interface. Wafers that had been in situ annealed 3 or 4 times exhibited a heavily faulted interface region, approximately 5000 Å thick, with the rest of the GaAs layer having a dislocation density in the 7-9 x 106 cm−2 range.

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21

Zayan, Ahmed, i Thomas E. Vandervelde. "GaTlAs Quantum Well Solar Cells for Sub-band Gap Absorption". MRS Advances 4, nr 36 (2019): 2015–21. http://dx.doi.org/10.1557/adv.2019.334.

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ABSTRACTDespite the improvements seen in efficiency of GaAs cells over the years, there remains room for improvement for it to approach the theoretical single junction limit posited by Shockley and Quiesser decades ago. One of the more pursued options is the growth of quantum wells within the structure of GaAs to enhance its photon absorption below its bandgap. Multiple Quantum Wells (MQW) have been an ongoing topic of research and discussion for the scientific community with structures like InGaAs/GaAs and InGaP/GaAs quantum wells producing promising results that could potentially improve overall energy conversion. Here, we used WEIN2K, a commercial density functional theory package, to study the ternary compound Ga1-xTlxAs and determine its electronic properties. Using these results combined with experimental confirmation we extend these properties to simulate its application to form a MQW GaAs/ Ga1-xTlxAs solar cell. Ga1-xTlxAs is a tunable ternary compound, with its bandgap being strongly dependent on the concentration of Tl present. Concentrations of Tl as low as 7% can reduce the bandgap of Ga1-xTlxAs to roughly 1.30 eV from GaAs’s 1.45 eV at room temperature with as little as a 1.7% increase in lattice constant. The change in bandgap, accompanied by the relatively small change in lattice constant makes Ga1-xTlxAs a strong candidate for a MQW cell with little to no strain balancing required within the structure to minimize unwanted defects that impede charge collection within the device. Our GaAs photodiode with TlGaAs MQWs shows an expanded absorption band and improved conversion efficiency over the standard GaAs photovoltaic cell with dilute concentrations of Tl incorporated into the compound.

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22

Torres-Jaramillo, Santiago, Roberto Bernal-Correa i Arturo Morales-Acevedo. "Improved design of InGaP/GaAs//Si tandem solar cells". EPJ Photovoltaics 12 (2021): 1. http://dx.doi.org/10.1051/epjpv/2021001.

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Optimizing any tandem solar cells design before making them experimentally is an important way of reducing development costs. Hence, in this work, we have used a complete analytical model that includes the important effects in the depletion regions of the III-V compound cells in order to simulate the behavior of two and four-terminal InGaP/GaAs//Si tandem solar cells for optimizing them. The design optimization procedure is described first, and then it is shown that the expected practical efficiencies at 1 sun (AM1.5 spectrum) for both two and four-terminal tandem cells can be around 40% when the appropriate thickness for each layer is used. The optimized design for both structures includes a double MgF2/ZnS anti-reflection layer (ARC). The results show that the optimum thicknesses are 130 (MgF2) and 60 nm (ZnS), respectively, while the optimum InGaP thickness is 220 nm and GaAs optimum thickness is 1800 nm for the four-terminal tandem on a HIT silicon solar cell (with total tandem efficiency around 39.8%). These results can be compared with the recent record experimental efficiency around 35.9% for this kind of solar cells. Therefore, triple junction InGaP/GaAs//Silicon tandem solar cells continue being very attractive for further development, using high efficiency HIT silicon cell as the bottom sub-cell.

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23

Li, Miao Miao, Xiao Ping Su, De Shen Feng, Jian Long Zuo, Nan Li i Xue Wu Wang. "The Study of Flower-Shaped Structure Dislocation in 4 Inch <100> Germanium Single Crystal". Materials Science Forum 685 (czerwiec 2011): 141–46. http://dx.doi.org/10.4028/www.scientific.net/msf.685.141.

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As the key component of single junction GaAs/Ge solar cells and GaAs/Ge solar cells, the quality of germanium single crystal affects the properties of space solar cell directly. The dislocation of germanium single crystals is the main impact factor on solar cells efficiency. Through measuring dislocation densities in the different positions of 4 inch <100> germanium single crystals produced by Czochralski method, we found that flower-shaped structure dislocations pattern was mainly caused by the inclusions. This paper briefly analyzed dislocations produced by inclusions, chemical etching pits method. SEM and EDS measurement methods were also employed to study the flower-shaped structure defects. A germanium single crystal with low dislocation density was obtained and the special defects were almost eliminated. The germanium single crystal with low dislocation density (PV) was obtained, which could meet the requirement of the GaAs/Ge solar cells.

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24

Минтаиров, М. А., В. В. Евстропов, С. А. Минтаиров, М. В. Нахимович, Р. А. Салий, М. З. Шварц i Н. А. Калюжный. "Увеличение эффективности трехпереходных солнечных элементов за счет метаморфного InGaAs-субэлемента". Письма в журнал технической физики 47, nr 18 (2021): 51. http://dx.doi.org/10.21883/pjtf.2021.18.51475.18888.

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The efficiency of GaInP/GaAs/InxGa1-xAs triple-junction solar cells obtained by replacing (in the widely used "classical" GaInP / GaAs / Ge heterostructure) the lower germanium with InxGa1-xAs subcell formed using the metamorphic growth technology has been investigated. Based on an original approach, the optimal indium concentration in the narrow-gap subcell has been found. The main parameters of InxGa1-xAs subcells with an indium concentration from x = 0.11 to 0.36 were determined and were used to calculate the IV characteristics of GaInP/GaAs/InxGa1-xAs solar cells. It has been determined that at x=0.28 the efficiency of the triple-junction solar cell increases by 3.4% (abs) in comparison with the “classical” solar cell, reaching a value of 40.3% (AM1.5D). Also it has been shown that the efficiency of such solar cells can be increased up to 41%.

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25

Halverson, Adam F., i Loucas Tsakalakos. "Junction Operation of GaAs Wire Array Solar Cells". MRS Proceedings 1493 (2013): 253–59. http://dx.doi.org/10.1557/opl.2013.403.

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ABSTRACTWire array solar cells benefit from enhanced coupling of light into the active area of the device, significantly decreased collection lengths due to radial charge separation and collection, and easier access to grain boundaries for passivation which may enable future deposition on non-wafer substrates. We report on an analysis of the junction operation of wire array based GaAs solar cells through temperature and light intensity dependent current-voltage analysis and compare these data to matched planar devices. We see evidence of non-ideal recombination pathways indicated by activation energies for generation-recombination that are significantly less than the band gap of GaAs. We observe voltage shifts in the wire array devices at low temperature and high light intensity that we posit can be explained by electron accumulation in the window layers of the devices.

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Papež, Nikola, Rashid Dallaev, Ştefan Ţălu i Jaroslav Kaštyl. "Overview of the Current State of Gallium Arsenide-Based Solar Cells". Materials 14, nr 11 (4.06.2021): 3075. http://dx.doi.org/10.3390/ma14113075.

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As widely-available silicon solar cells, the development of GaAs-based solar cells has been ongoing for many years. Although cells on the gallium arsenide basis today achieve the highest efficiency of all, they are not very widespread. They have particular specifications that make them attractive, especially for certain areas. Thanks to their durability under challenging conditions, it is possible to operate them in places where other solar cells have already undergone significant degradation. This review summarizes past, present, and future uses of GaAs photovoltaic cells. It examines advances in their development, performance, and various current implementations and modifications.

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27

Alekseev, Prokhor A., Vladislav A. Sharov, Bogdan R. Borodin, Mikhail S. Dunaevskiy, Rodion R. Reznik i George E. Cirlin. "Effect of the Uniaxial Compression on the GaAs Nanowire Solar Cell". Micromachines 11, nr 6 (10.06.2020): 581. http://dx.doi.org/10.3390/mi11060581.

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Research regarding ways to increase solar cell efficiency is in high demand. Mechanical deformation of a nanowire (NW) solar cell can improve its efficiency. Here, the effect of uniaxial compression on GaAs nanowire solar cells was studied via conductive atomic force microscopy (C-AFM) supported by numerical simulation. C-AFM I–V curves were measured for wurtzite p-GaAs NW grown on p-Si substrate. Numerical simulations were performed considering piezoresistance and piezoelectric effects. Solar cell efficiency reduction of 50% under a −0.5% strain was observed. The analysis demonstrated the presence of an additional fixed electrical charge at the NW/substrate interface, which was induced due to mismatch between the crystal lattices, thereby affecting the efficiency. Additionally, numerical simulations regarding the p-n GaAs NW solar cell under uniaxial compression were performed, showing that solar efficiency could be controlled by mechanical deformation and configuration of the wurtzite and zinc blende p-n segments in the NW. The relative solar efficiency was shown to be increased by 6.3% under −0.75% uniaxial compression. These findings demonstrate a way to increase efficiency of GaAs NW-based solar cells via uniaxial mechanical compression.

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28

Raj, Vidur, Tuomas Haggren, Julie Tournet, Hark Hoe Tan i Chennupati Jagadish. "Electron-Selective Contact for GaAs Solar Cells". ACS Applied Energy Materials 4, nr 2 (9.02.2021): 1356–64. http://dx.doi.org/10.1021/acsaem.0c02616.

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29

Bertness, K. A., D. J. Friedman, Sarah R. Kurtz, A. E. Kibbler, C. Kramer i J. M. Olson. "High-efficiency GaInP/GaAs tandem solar cells". Journal of Propulsion and Power 12, nr 5 (wrzesień 1996): 842–46. http://dx.doi.org/10.2514/3.24112.

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30

Vaisman, Michelle, Nikhil Jain, Qiang Li, Kei May Lau, Emily Makoutz, Theresa Saenz, Willian E. McMahon, Adele C. Tamboli i Emily L. Warren. "GaAs Solar Cells on Nanopatterned Si Substrates". IEEE Journal of Photovoltaics 8, nr 6 (listopad 2018): 1635–40. http://dx.doi.org/10.1109/jphotov.2018.2871423.

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31

Bertness, K. A., Sarah R. Kurtz, D. J. Friedman, A. E. Kibbler, C. Kramer i J. M. Olson. "29.5%‐efficient GaInP/GaAs tandem solar cells". Applied Physics Letters 65, nr 8 (22.08.1994): 989–91. http://dx.doi.org/10.1063/1.112171.

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van Leest, R. H., P. Mulder, G. J. Bauhuis, H. Cheun, H. Lee, W. Yoon, R. van der Heijden, E. Bongers, E. Vlieg i J. J. Schermer. "Metal diffusion barriers for GaAs solar cells". Physical Chemistry Chemical Physics 19, nr 11 (2017): 7607–16. http://dx.doi.org/10.1039/c6cp08755h.

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Accelerated Ageing Testing (AAT) was used to assess the barrier potential of Ti, Ni, Pd and Pt. At a test temperature of 250 °C Ni offers the largest barrier potential. Based on TEM images and phase diagrams a barrier mechanism is proposed.

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Hu, Y., R. R. LaPierre, M. Li, K. Chen i J. J. He. "Optical characteristics of GaAs nanowire solar cells". Journal of Applied Physics 112, nr 10 (15.11.2012): 104311. http://dx.doi.org/10.1063/1.4764927.

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Liang, Dong, Yangsen Kang, Yijie Huo, Yusi Chen, Yi Cui i James S. Harris. "High-Efficiency Nanostructured Window GaAs Solar Cells". Nano Letters 13, nr 10 (16.09.2013): 4850–56. http://dx.doi.org/10.1021/nl402680g.

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Horowitz, G., i F. Garnier. "Polythiophene-GaAs p-n heterojunction solar cells". Solar Energy Materials 13, nr 1 (styczeń 1986): 47–55. http://dx.doi.org/10.1016/0165-1633(86)90027-4.

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Lam, Phu, Jiang Wu, Mingchu Tang, Qi Jiang, Sabina Hatch, Richard Beanland, James Wilson, Rebecca Allison i Huiyun Liu. "Submonolayer InGaAs/GaAs quantum dot solar cells". Solar Energy Materials and Solar Cells 126 (lipiec 2014): 83–87. http://dx.doi.org/10.1016/j.solmat.2014.03.046.

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Shen, Jingman, Lijie Sun, Kaijian Chen, Wei Zhang i Xunchun Wang. "Direct-bonded four-junction GaAs solar cells". Journal of Semiconductors 36, nr 6 (czerwiec 2015): 064012. http://dx.doi.org/10.1088/1674-4926/36/6/064012.

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Bertness, K. A., D. J. Friedman, S. R. Kurtz, A. E. Kibbler, C. Kramer i J. M. Olson. "High-efficiency GaInP/GaAs tandem solar cells". IEEE Aerospace and Electronic Systems Magazine 9, nr 12 (grudzień 1994): 12–17. http://dx.doi.org/10.1109/62.334755.

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Woodall, J. M., i H. J. Hovel. "High-efficiency Ga1-xAlxAs-GaAs solar cells". Solar Cells 29, nr 2-3 (sierpień 1990): 167–72. http://dx.doi.org/10.1016/0379-6787(90)90024-y.

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Ürmös, Antal, Zoltán Farkas, László Dobos, Szilvia Nagy i Ákos Nemcsics. "Contact Problems in GaAs-based Solar Cells". Acta Polytechnica Hungarica 15, nr 6 (2018): 99–124. http://dx.doi.org/10.12700/aph.15.6.2018.6.6.

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Yang, M. D., S. W. Wu, G. W. Shu, J. S. Wang, J. L. Shen, C. H. Wu, C. A. J. Lin i in. "Improving Performance of InGaN/GaN Light-Emitting Diodes and GaAs Solar Cells Using Luminescent Gold Nanoclusters". Journal of Nanomaterials 2009 (2009): 1–5. http://dx.doi.org/10.1155/2009/840791.

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We studied the optoelectronic properties of the InGaN/GaN multiple-quantum-well light emitting diodes (LEDs) and single-junction GaAs solar cells by introducing the luminescent Au nanoclusters. The electroluminescence intensity for InGaN/GaN LEDs increases after incorporation of the luminescent Au nanoclusters. An increase of 15.4% in energy conversion efficiency is obtained for the GaAs solar cells in which the luminescent Au nanoclusters have been incorporated. We suggest that the increased light coupling due to radiative scattering from nanoclusters is responsible for improving the performance of the LEDs and solar cells.

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Sin, Yongkun, Stephen LaLumondiere, Nathan Wells, Zachary Lingley, Nathan Presser, William Lotshaw, Steven C. Moss i in. "Carrier Dynamics in MOVPE-Grown Bulk InGaAsNSb Materials and Epitaxial Lift-Off GaAs Double Heterostructures for Multi-junction Solar Cells". MRS Proceedings 1635 (2014): 55–62. http://dx.doi.org/10.1557/opl.2014.370.

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ABSTRACTHigh performance and cost effective multi-junction III-V solar cells are attractive for satellite applications. High performance multi-junction solar cells are based on a triple-junction design that employs an InGaP top-junction, a GaAs middle-junction, and a bottom-junction consisting of a 1.0 – 1.25 eV-material. The most attractive 1.0 – 1.25 eV-material is the lattice-matched dilute nitride such as InGaAsN(Sb). A record efficiency of 43.5% was achieved from multi-junction solar cells including dilute nitride materials [1]. In addition, cost effective manufacturing of III-V triple-junction solar cells can be achieved by employing full-wafer epitaxial lift-off (ELO) technology, which enables multiple substrate re-usages. We employed time-resolved photoluminescence (TR-PL) techniques to study carrier dynamics in both pre- and post-ELO processed GaAs double heterostructures (DHs) as well as in MOVPE-grown bulk dilute nitride layers lattice matched to GaAs substrates.

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Kim, Chae-Won, Gwang-Yeol Park, Jae-Cheol Shin i Hyo-Jin Kim. "Efficiency Enhancement of GaAs Single-Junction Solar Cell by Nanotextured Window Layer". Applied Sciences 12, nr 2 (8.01.2022): 601. http://dx.doi.org/10.3390/app12020601.

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In order to improve efficiency of flexible III-V semiconductor multi-junction solar cells, it is important to enhance the current density for efficiency improvement and to attain an even efficiency of solar cells on a curved surface. In this study, the nanotextured InAlP window layer of a GaAs single-junction solar cell was employed to suppress reflectance in broad range. The nanotextured surface affects the reflectance suppression with the broad spectrum of wavelength, which causes it to increase the current density and efficiency of the GaAs single-junction solar cell and alleviate the efficiency drop at the high incident angle of the light source. Those results show the potential of the effectively suppressed reflectance of multi-junction solar cells and even performance of solar cells attached on a curved surface.

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Bradshaw, Geoffrey K., Joshua P. Samberg, C. Zachary Carlin, Peter C. Colter, Kenneth M. Edmondson, William Hong, Chris Fetzer, Nasser Karam i Salah M. Bedair. "GaInP/GaAs Tandem Solar Cells With InGaAs/GaAsP Multiple Quantum Wells". IEEE Journal of Photovoltaics 4, nr 2 (marzec 2014): 614–19. http://dx.doi.org/10.1109/jphotov.2013.2294750.

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Oshima, Ryuji, Akio Ogura, Yasushi Shoji, Kikuo Makita, Akinori Ubukata, Shuuichi Koseki, Mitsuru Imaizumi i Takeyoshi Sugaya. "Ultra-High-Speed Growth of GaAs Solar Cells by Triple-Chamber Hydride Vapor Phase Epitaxy". Crystals 13, nr 3 (21.02.2023): 370. http://dx.doi.org/10.3390/cryst13030370.

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In photovoltaic (PV) power generation, highly efficient III-V solar cells are promising for emerging mobile applications, such as vehicle-integrated PVs. Although hydride vapor phase epitaxy (HVPE) has received attention due to its lower fabrication costs, realization of high throughput performance while maintaining solar-cell characteristics using this growth method is essential. In this study, the effect of atmospheric-pressure triple-chamber HVPE growth conditions on GaAs solar-cell properties were carefully investigated in conjunction with defect analysis using deep-level transient spectroscopy (DLTS). Based on the analysis on GaAs reaction processes, the suppression of arsine thermal cracking in the HVPE hot-wall reactor was important to achieve fast GaAs growth using a low input V/III ratio. Moreover, the DLTS results revealed that the reduced input V/III ratio was effective in suppressing the generation of EL2 traps, which is a common GaAs midgap complex defect involving arsenic antisites. Although the EL2 trap density increased with the growth rate, the performance of GaAs solar cells that were grown under reduced arsine thermal cracking exhibited almost no considerable cell parameter deterioration at a growth rate of up to 297 μm/h. Consequently, a conversion efficiency of 24% with a high open-circuit voltage of 1.04 V was achieved for the cells that were grown at 200 μm/h.

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van Leest, R. H., K. de Kleijne, G. J. Bauhuis, P. Mulder, H. Cheun, H. Lee, W. Yoon i in. "Degradation mechanism(s) of GaAs solar cells with Cu contacts". Physical Chemistry Chemical Physics 18, nr 15 (2016): 10232–40. http://dx.doi.org/10.1039/c6cp01428c.

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Yamaguchi, Masafumi, Frank Dimroth, Nicholas J. Ekins-Daukes, Nobuaki Kojima i Yoshio Ohshita. "Overview and loss analysis of III–V single-junction and multi-junction solar cells". EPJ Photovoltaics 13 (2022): 22. http://dx.doi.org/10.1051/epjpv/2022020.

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The development of high-performance solar cells offers a promising pathway toward achieving high power per unit cost for many applications. Because state-of-the-art efficiencies of single-junction solar cells are approaching the Shockley-Queisser limit, the multi-junction (MJ) solar cells are very attractive for high-efficiency solar cells. This paper reviews progress in III–V compound single-junction and MJ solar cells. In addition, analytical results for efficiency potential and non-radiative recombination and resistance losses in III–V compound single-junction and MJ solar cells are presented for further understanding and decreasing major losses in III–V compound materials and MJ solar cells. GaAs single-junction, III–V 2-junction and III–V 3-junction solar cells are shown to have potential efficiencies of 30%, 37% and 47%, respectively. Although in initial stage of developments, GaAs single-junction and III–V MJ solar cells have shown low ERE values, ERE values have been improved as a result of several technology development such as device structure and material quality developments. In the case of III–V MJ solar cells, improvements in ERE of sub-cells are shown to be necessary for further improvements in efficiencies of MJ solar cells.

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Dutta, P., M. Rathi, D. Khatiwada, S. Sun, Y. Yao, B. Yu, S. Reed i in. "Flexible GaAs solar cells on roll-to-roll processed epitaxial Ge films on metal foils: a route towards low-cost and high-performance III–V photovoltaics". Energy & Environmental Science 12, nr 2 (2019): 756–66. http://dx.doi.org/10.1039/c8ee02553c.

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Xu, Jing, Gang Yan i Ming Lu. "Evaluation of the Minority-Carrier Lifetime of IMM3J Solar Cells under Proton Irradiation Based on Electroluminescence". Crystals 13, nr 2 (10.02.2023): 297. http://dx.doi.org/10.3390/cryst13020297.

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The shortening of the minority carrier lifetime is the main reason for the degradation of the electrical performance of solar cells; therefore, it is particularly important to evaluate the minority carrier lifetime of inverted metamorphic triple junction (IMM3J) GaInP/GaAs/InGaAs solar cells. We evaluate the minority carrier lifetime of each subcell of IMM3J solar cells before and after 2 MeV proton irradiation by the electroluminescence (EL) method. Before proton irradiation, the minority carrier lifetimes of the GaInP, GaAs, and InGaAs subcells were 6.99 × 10−9 s, 3.09 × 10−8 s, and 2.31 × 10−8 s, respectively. After proton irradiation, the minority carrier lifetime of GaInP, GaAs, and InGaAs subcells degraded significantly. When the proton fluence was 2 × 1012 cm−2, the minority carrier lifetimes of the GaInP, GaAs, and InGaAs subcells degraded to 1.63 × 10−10 s, 1.56 × 10−11 s, and 1.65 × 10−10 s, respectively. These results provide a reference for predicting the degradation of the short-circuit current and open-circuit voltage of each subcell.

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Kamdem, Cedrik Fotcha, Ariel Teyou Ngoupo, François Xavier Abomo Abega, Aimé Magloire Ntouga Abena i Jean-Marie Bienvenu Ndjaka. "Design and Performance Enhancement of a GaAs-Based Homojunction Solar Cell Using Ga0.5In0.5P as a Back Surface Field (BSF): A Simulation Approach". International Journal of Photoenergy 2023 (14.06.2023): 1–17. http://dx.doi.org/10.1155/2023/6204891.

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The GaAs semiconductor is a solar energy promising material for photovoltaic applications due to its good optical and electronic properties. In this work, a homojunction GaAs solar cell with AlxGa1-xAs and GayIn1-yP solar energy materials as window and back surface field (BSF) layers, respectively, was simulated and investigated using SCAPS-1D software. The performance of the GaAs-based solar cell is evaluated for different proportions of x and y , which allowed us to obtain the values of 0.8 and 0.5 for x and y , respectively, as the best values for high performance. We then continued the optimization by taking into account some parameters of the solar cell, such as thickness, doping, and bulk defect density of the p-GaAs base, n-GaAs emitter, and Ga0.5In0.5P BSF layer. Solar cell efficiency increases with emitter thickness, but the recombination phenomenon is more pronounced than that of electron-hole pair generation in the case of a thicker base. The effect of variation in the work function of the back contact has also been studied, and the best performance is for a platinum (Pt) electrode. The optimized GaAs-based solar cell achieves a power conversion efficiency of 35.44% ( J SC = 31.52 mA/cm2, V OC = 1.26 V, FF = 89.14 %) and a temperature coefficient of -0.036%/°C. These simulation results provide insight into the various ways to improve the efficiency of GaAs-based solar cells.

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