Gotowe bibliografie tematyczne / GaAs solar cells

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Gotowa bibliografia na temat „GaAs solar cells”

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Data publikacji: 6 września 2023

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Artykuły w czasopismach na temat "GaAs solar cells"

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Jones, K. M., R. J. Matson, M. M. Al-Jassim i S. M. Vernon. "Defect generation and propagation in GaAs solar cells". Proceedings, annual meeting, Electron Microscopy Society of America 46 (1988): 926–27. http://dx.doi.org/10.1017/s0424820100106697.

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It is well known that dislocations have deleterious effects on the performance of minority carrier semiconductor devices. In a previous study(1), the results of an EBIC examination of GaAsP wide bandgap solar cells was reported. The effects of defects in the 106-108 cm-2 range on various cell parameters were investigated. However, the equally important 104-106 range was not studied. In this work, we report a study on defects in low bandgap (1.4 eV) GaAs cells in the 104-108 cm-2 range. These cells were grown by low pressure MOCVD on GaAs substrates. In order to introduce dislocations with such a wide range of densities, an intermediate mismatched layer of GaAs1_xPx was introduced into the structure (Fig. 1). Five different device-type structures were grown in which the P concentration (x) was varied from 2% to 32%. These concentrations correspond to a lattice mismatch of 7.3x10-4 and 1.2xl0-2respectively. As expected, the higher the P concentration the larger the mismatch being introduced into the system and therefore, the higher the defect density.
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Steiner, Myles A., Collin D. Barraugh, Chase W. Aldridge, Isabel Barraza Alvarez, Daniel J. Friedman, Nicholas J. Ekins-Daukes, Todd G. Deutsch i James L. Young. "Photoelectrochemical water splitting using strain-balanced multiple quantum well photovoltaic cells". Sustainable Energy & Fuels 3, nr 10 (2019): 2837–44. http://dx.doi.org/10.1039/c9se00276f.

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Strain-balanced GaInAs/GaAsP quantum wells were incorporated into the classical GaInP/GaAs tandem photoelectrochemical water splitting device to increase the range of photon absorption and achieve higher solar-to-hydrogen efficiencies.
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Tomasulo, Stephanie, Kevin Nay Yaung i Minjoo Larry Lee. "Metamorphic GaAsP and InGaP Solar Cells on GaAs". IEEE Journal of Photovoltaics 2, nr 1 (styczeń 2012): 56–61. http://dx.doi.org/10.1109/jphotov.2011.2177640.

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Wu, Shao-Hua, i Michelle L. Povinelli. "Solar heating of GaAs nanowire solar cells". Optics Express 23, nr 24 (25.09.2015): A1363. http://dx.doi.org/10.1364/oe.23.0a1363.

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Olson, J. M., A. Kibbler i T. Gessert. "GaInP/GaAs multijunction solar cells". Solar Cells 21, nr 1-4 (czerwiec 1987): 450–51. http://dx.doi.org/10.1016/0379-6787(87)90147-5.

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Courel, Maykel, Julio C. Rimada i Luis Hernández. "AlGaAs/GaAs superlattice solar cells". Progress in Photovoltaics: Research and Applications 21, nr 3 (9.10.2011): 276–82. http://dx.doi.org/10.1002/pip.1178.

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Woo, Seungwan, Geunhwan Ryu, Taesoo Kim, Namgi Hong, Jae-Hoon Han, Rafael Jumar Chu, Jinho Bae i in. "Growth and Fabrication of GaAs Thin-Film Solar Cells on a Si Substrate via Hetero Epitaxial Lift-Off". Applied Sciences 12, nr 2 (14.01.2022): 820. http://dx.doi.org/10.3390/app12020820.

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We demonstrate, for the first time, GaAs thin film solar cells epitaxially grown on a Si substrate using a metal wafer bonding and epitaxial lift-off process. A relatively thin 2.1 μm GaAs buffer layer was first grown on Si as a virtual substrate, and a threading dislocation density of 1.8 × 107 cm−2 was achieved via two In0.1Ga0.9As strained insertion layers and 6× thermal cycle annealing. An inverted p-on-n GaAs solar cell structure grown on the GaAs/Si virtual substrate showed homogenous photoluminescence peak intensities throughout the 2″ wafer. We show a 10.6% efficient GaAs thin film solar cell without anti-reflection coatings and compare it to nominally identical upright structure solar cells grown on GaAs and Si. This work paves the way for large-scale and low-cost wafer-bonded III-V multi-junction solar cells.
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Horng, Ray-Hua, Ming-Chun Tseng i Shui-Yang Lien. "Reliability Analysis of III-V Solar Cells Grown on Recycled GaAs Substrates and an Electroplated Nickel Substrate". International Journal of Photoenergy 2013 (2013): 1–9. http://dx.doi.org/10.1155/2013/108696.

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This study involved analyzing the reliability of two types of III-V solar cells: (1) III-V solar cells grown on new and recycled gallium arsenide (GaAs) substrates and (2) the III-V solar cells transferred onto an electroplated nickel (Ni) substrate as III-V thin-film solar cells by using a cross-shaped pattern epitaxial lift-off (CPELO) process. The III-V solar cells were grown on new and recycled GaAs substrates to evaluate the reliability of the substrate. The recycled GaAs substrate was fabricated by using the CPELO process. The performance of the solar cells grown on the recycled GaAs substrate was affected by the uneven surface morphology of the recycled GaAs substrate, which caused the propagation of these dislocations into the subsequently grown active layer of the solar cell. The III-V solar cells were transferred onto an electroplated Ni substrate, which was also fabricated by using CPELO technology. The degradation of the III-V thin-film solar cell after conducting a thermal shock test could have been caused by microcracks or microvoids in the active layer or interface of the heterojunction, which resulted in the reduction of the external quantum efficiency response and the increase of recombination loss.
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Simon, John, Christiane Frank-Rotsch, Karoline Stolze, Matthew Young, Myles A. Steiner i Aaron J. Ptak. "GaAs solar cells grown on intentionally contaminated GaAs substrates". Journal of Crystal Growth 541 (lipiec 2020): 125668. http://dx.doi.org/10.1016/j.jcrysgro.2020.125668.

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Horng, Ray-Hua, Yu-Cheng Kao, Apoorva Sood, Po-Liang Liu, Wei-Cheng Wang i Yen-Jui Teseng. "GaInP/GaAs/poly-Si Multi-Junction Solar Cells by in Metal Balls Bonding". Crystals 11, nr 7 (24.06.2021): 726. http://dx.doi.org/10.3390/cryst11070726.

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In this study, a mechanical stacking technique has been used to bond together the GaInP/GaAs and poly-silicon (Si) solar wafers. A GaInP/GaAs/poly-Si triple-junction solar cell has mechanically stacked using a low-temperature bonding process which involves micro metal In balls on a metal line using a high-optical-transmission spin-coated glue material. Current–voltage measurements of the GaInP/GaAs/poly-Si triple-junction solar cells have carried out at room temperature both in the dark and under 1 sun with 100 mW/cm2 power density using a solar simulator. The GaInP/GaAs/poly-Si triple-junction solar cell has reached an efficiency of 24.5% with an open-circuit voltage of 2.68 V, a short-circuit current density of 12.39 mA/cm2, and a fill-factor of 73.8%. This study demonstrates a great potential for the low-temperature micro-metal-ball mechanical stacking technique to achieve high conversion efficiency for solar cells with three or more junctions.
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Rozprawy doktorskie na temat "GaAs solar cells"

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Vandamme, Nicolas. "Nanostructured ultrathin GaAs solar cells". Thesis, Paris 11, 2015. http://www.theses.fr/2015PA112111/document.

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L’amincissement des cellules solaires semi-conductrices est motivé par la réduction des coûts de production et l’augmentation des rendements de conversion. Mais en deçà de quelques centaines de nanomètres, il requiert de nouvelles stratégies de piégeage optique. Nous proposons d’utiliser des concepts de la nanophotonique et de la plasmonique pour absorber la lumière sur une large bande spectrale dans des couches ultrafines de GaAs. Nous concevons et fabriquons pour ce faire des structures multi-résonantes formées de réseaux de nanostructures métalliques. Dans un premier temps, nous montrons qu’il est possible de confiner la lumière dans une couche de 25 nm de GaAs à l’aide d’une nanogrille bidimensionnelle pouvant servir de contact électrique en face avant. Nous analysons numériquement les modes résonants qui conduisent à une absorption moyenne de 80% de la lumière incidente entre 450 nm et 850 nm. Ces résultats sont validés par la fabrication et la caractérisation de super-absorbeurs ultrafins multi-résonants. Dans un second temps, nous appliquons une approche similaire dans le but d’obtenir des cellules photovoltaïques dix fois plus fines que les cellules GaAs records, avec des absorbeurs de 120 nm et 220 nm seulement. Un miroir arrière nanostructuré en argent, associé à des contacts ohmiques localisés, permet d’améliorer l’absorption tout en garantissant une collecte optimale des porteurs photo-générés. Nos calculs montrent que les densités de courant de court-circuit (Jsc) dans ces structures optimisées peuvent atteindre 22.4 mA/cm2 et 26.0 mA/cm2 pour les absorbeurs d’épaisseurs respectives t=120 nm et t=220 nm. Ces performances sont obtenues grâce à l’excitation d’une grande variété de modes résonants (Fabry-Pérot, modes guidés,…). En parallèle, nous avons développé un procédé de fabrication complet de ces cellules utilisant la nano-impression et le transfert des couches actives. Les mesures montrent des Jsc records de 17.5 mA/cm2 (t=120 nm) et 22.8 mA/cm2 (t=220 nm). Ces résultats ouvrent la voie à l’obtention de rendements supérieurs à 20% avec des cellules solaires simple jonction d’épaisseur inférieure à 200 nm
The thickness reduction of solar cells is motivated by the reduction of production costs and the enhancement of conversion efficiencies. However, for thicknesses below a few hundreds of nanometers, new light trapping strategies are required. We propose to introduce nanophotonics and plasmonics concepts to absorb light on a wide spectral range in ultrathin GaAs layers. We conceive and fabricate multi-resonant structures made of arrays of metal nanostructures. First, we design a super-absorber made of a 25 nm-thick GaAs slab transferred on a back metallic mirror with a top metal nanogrid that can serve as an alternative front electrode. We analyze numerically the resonance mechanisms that result in an average light absorption of 80% over the 450nm-850nm spectral range. The results are validated by the fabrication and characterization of these multi-resonant super-absorbers made of ultrathin GaAs. Second, we use a similar strategy for GaAs solar cells with thicknesses 10 times thinner than record single-junction photovoltaic devices. A silver nanostructured back mirror is used to enhance the absorption efficiency by the excitation of various resonant modes (Fabry-Perot, guided modes,…). It is combined with localized ohmic contacts in order to enhance the absorption efficiency and to optimize the collection of photogenerated carriers. According to numerical calculations, the short-circuit current densities (Jsc) can reach 22.4 mA/cm2 and 26.0 mA/cm2 for absorber thicknesses of t=120 nm and t=220 nm, respectively. We have developed a fabrication process based on nano-imprint lithography and on the transfer of the active layers. Measurements exhibit record short-circuit currents up to 17.5 mA/cm2 (t=120 nm) and 22.8 mA/cm2 (t=220 nm). These results pave the way toward conversion efficiencies above 20% with single junction solar cells made of absorbers thinner than 200 nm
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Tutu, F. K. K. "InAs/GaAs quantum dot solar cells". Thesis, University College London (University of London), 2014. http://discovery.ucl.ac.uk/1430283/.

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Self-assembled III-V quantum dots (QDs) have been intensely studied for potential applications in solar cell (SC) devices in order to increase power conversion efficiency. Due to their quantum confinement of carriers, QDs have been proposed as a means of implementing the intermediate band solar cell (IBSC). The IBSC concept is characterised by in an increase in photocurrent and a preservation of output voltage, resulting from an enhanced sensitivity to the solar spectrum. The work reported in this thesis is concerned with the development of InAs QDs in GaAs p-i-n solar cell structures, with the aim of realising of an IBSC. The work involves the design, epitaxial growth by molecular beam epitaxy (MBE), device processing and characterisation of the QDSCs. This thesis first investigates InAs/InGaAs dot-in-a-well (DWELL) solar cell structures grown under different conditions. The use of a high-growth-temperature GaAs spacer layers is demonstrated to significantly enhance the performance of the multilayer DWELL solar cells. Threading dislocations were observed for a 30-layer QD structure with GaAs spacer layers grown at a low temperature (510 oC). By growing the GaAs spacer layer at a higher temperature (580 oC), the formation of threading dislocations were suppressed, resulting in enhanced optical properties. The thesis then goes on to address the main challenges facing QD IBSCs, that is, the reduction in open-circuit voltage and the lack of significant increase in short-circuit current. To eliminate the wetting layer and enhance the open-circuit voltage of the QD solar cell, an AlAs cap layer technique was used. This resulted in an enhancement of the open-circuit voltage of a 20-layer InAs/GaAs QDSC from 0.69 V to 0.79 V. Despite a slight reduction in short-circuit current, for the QDSC with AlAs cap layer, the enhancement in the open-circuit voltage was enough to ensure that its efficiency is higher than the QDSC without AlAs cap layers. In an attempt to enhance the short-circuit current, an antimony-mediated growth approach was used to grow high-density QDs. After optimisation of the growth temperature and InAs coverage, a very high in-plane QD density of 1  1011 cm-2 was achieved by applying a few monolayers of antimony prior to QD growth. Compared with a reference QDSC without the incorporation of antimony, the high-density QDSC demonstrates a distinct improvement in short-circuit current from 7.4 mA/cm2 to 8.3 mA/cm2. This result shows that a significant increase in short-circuit current could potentially compensate for the drop in open-circuit voltage observed in InAs/GaAs QD solar cells. Ongoing work on the development of QDSCs with both AlAs capping and antimony-mediated growth have resulted in the simultaneous elimination of the wetting layer and increase in QD absorption in a single device. Overall, the studies in this thesis present important implications for the design and growth of InAs/GaAs QD solar cell structures for the implementation of IBSCs.
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Chen, Hung-Ling. "Ultrathin and nanowire-based GaAs solar cells". Thesis, Université Paris-Saclay (ComUE), 2018. http://www.theses.fr/2018SACLS355/document.

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Confiner la lumière dans un volume réduit d'absorbeur photovoltaïque offre de nouvelles voies pour les cellules solaires à haute rendement. Ceci peut être réalisé en utilisant des nanostructures pour le piégeage optique ou des nanofils de semi-conducteurs. Dans une première partie, nous présentons la conception et la fabrication de cellules solaires ultra-minces (205 nm) en GaAs. Nous obtenons des résonances multiples grâce à un miroir arrière nanostructuré en TiO2/Ag fabriqué par nanoimpression, résultant en un courant de court-circuit élevé de 24,6 mA/cm². Nous obtenons le record d’efficacité de 19,9%. Nous analysons les mécanismes des pertes et nous proposons une voie réaliste vers un rendement de 25% en utilisant un absorbeur de GaAs de 200 nm d'épaisseur seulement. Dans une deuxième partie, nous étudions les propriétés de nanofils en GaAs crûs sur substrats Si et nous explorons leur potentiel comme absorbeur photovoltaïque. Un dopage élevé est souhaité dans les cellules solaires à nanofils en jonction coeur-coquille, mais la caractérisation à l'échelle d'un nanofil unique reste difficile. Nous montrons que la cathodoluminescence (CL) peut être utilisée pour déterminer les niveaux de dopage de GaAs de type n et p avec une résolution nanométrique. Les semi-conducteurs III-V de type n présentent une émission décalée vers le bleu, à cause du remplissage de la bande de conduction, tandis que les semi-conducteurs de type p présentent une émission décalée vers le rouge due à la réduction du gap. La loi de Planck généralisée est utilisée pour fitter tout le spectre et ainsi évaluer quantitativement le niveau de dopage. Nous utilisons également la polarimétrie de CL pour déterminer sélectivement les propriétés de phases wurtzite/zinc-blende d'un nanofil unique. Nous montrons enfin des cellules solaires fonctionnelles à nanofils de GaAs. Ces travaux ouvrent des perspectives vers une nouvelle génération de cellules photovoltaïques
Confining sunlight in a reduced volume of photovoltaic absorber offers new directions for high-efficiency solar cells. This can be achieved using nanophotonic structures for light trapping, or semiconductor nanowires. First, we have designed and fabricated ultrathin (205 nm) GaAs solar cells. Multi-resonant light trapping is achieved with a nanostructured TiO2/Ag back mirror fabricated using nanoimprint lithography, resulting in a high short-circuit current of 24.6 mA/cm². We obtain the record 1 sun efficiency of 19.9%. A detailed loss analysis is carried out and we provide a realistic pathway toward 25% efficiency using only 200 nm-thick GaAs absorber. Second, we investigate the properties of GaAs nanowires grown on Si substrates and we explore their potential as active absorber. High doping is desired in core-shell nanowire solar cells, but the characterization of single nanowires remains challenging. We show that cathodoluminescence (CL) mapping can be used to determine both n-type and p-type doping levels of GaAs with nanometer scale resolution. n-type III-V semiconductor shows characteristic blueshift emission due to the conduction band filling, while p-type semiconductor exhibits redshift emission due to the dominant bandgap narrowing. The generalized Planck’s law is used to fit the whole spectra and allows for quantitative doping assessment. We also use CL polarimetry to determine selectively the properties of wurtzite and zincblende phases of single nanowires. Finally, we demonstrate successful GaAs nanowire solar cells. These works open new perspectives for next-generation photovoltaics
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Feteha, Mohamed Yousef Mohamed. "Heterojunction AlGaAs-GaAs solar cells for space applications". Thesis, University of Central Lancashire, 1995. http://clok.uclan.ac.uk/18836/.

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Two types of solar cell AlGaAs-GaAs structures which are heteroface and triple heterojunction are investigated in this study. A complete theoretical study including optimisation for the optical properties ( transmission and reflection) of the heteroface Alo.sGao.2As- GaAs space solar cell is presented. The grid shadow and window layer effects, angle of incidence and the effects of the layer design parameters for AR-coating and window layer on the optical properties are considered in the calculations. A new structure for space solar cell which consists of double heterojunction AlGaAs­GaAs structure with GaAs/AlGaAs heterojunction back surface field (triple heterojunction(TIIJ))-to enhance the performance of the existed double heterojunction solar cell- is proposed. The analytical model for this TIU cell is presented as a function of all the cell's design parameters ( such as _layers doping, thicknesses, etc). The calculated results for this structure is compared with the experimental results for the previous double heterojunction structure. The effects of the design parameters of all layers including the AR-coating on the cell's output performance and the optimisation conditions are studied as well. The techniques of the light trapping and the photon recycling( which are gocxl for space solar cells) are applied for the THJ thin film AlGaAs-GaAs structure to improve further the efficiency . The change of the optimisation conditions due to the usage of these two techniques is also discussed.
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Robertson, Kyle. "Optoelectronic Device Modeling of GaAs Nanowire Solar Cells". Thesis, Université d'Ottawa / University of Ottawa, 2019. http://hdl.handle.net/10393/39710.

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Nanowire solar cells have great potential as candidates for high efficiency, next-generation solar cell devices. To realize their potential, accurate and efficient modeling techniques en- compassing both optical and electrical phenomena must be developed. In this work, a coupled optical and electronic model of GaAs nanowire solar cells was developed, with the goal of building a platform for automated, algorithmic device optimization. Significant work was done on the optical portion of model, with the goal of reducing run- times and improving the level of automation. Enhancements were made to an open-source implementation of the Rigorous Coupled Wave Analysis method for solving Maxwell’s equations, to make it more accurate for modeling nanowire solar cells. Its accuracy and efficiency were thoroughly investigated, and with the enhancements presented here it was shown to be an effective technique for rapid optical modeling of nanowire devices. Purely optical optimizations of a sample AlInP-passivated GaAs nanowire on a GaAs substrate were performed to demonstrate the efficacy of the technique using a Nelder-Mead simplex optimization of device geometry. The optical model was then coupled into a finite volume method based electrical model implemented in TCAD Sentaurus, to compute device efficiencies and ultimately optimize electrical device performance. As a first step, an algorithmic optimization of a p-i-n nanowire solar cell consisting of an AlInP-passivated GaAs nanowire on a Si substrate was performed using the generation rates computed by the enhanced RCWA implementation. The overall geometry was fixed to the result of the optical optimization, and only internal electrical parameters were optimized. The results showed that significant performance improvements can be obtained with the right choice of doping levels and doping region configurations, even without optimizing the global device geometry.
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SCACCABAROZZI, ANDREA. "GaAs/AlGaAs quantum dot intermediate band solar cells". Doctoral thesis, Università degli Studi di Milano-Bicocca, 2013. http://hdl.handle.net/10281/40117.

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This thesis presents my Ph.D. work about quantum dot GaAs/AlGaAs solar cells grown by droplet epitaxy, exploring the potential of this materials system for the realization of intermediate band photovoltaic devices. In the first chapter a general introduction to the field of solar energy is given, outlining the reasons why this research has been performed. The physics of the photovoltaic cell is briefly explained in its most important points, to give the reader clear understanding of what is presented in the following chapters. Intermediate band devices are presented in the second chapter. The theoretical foundations presented do not aim at constituting an exhaustive explanation of the theory underlying intermediate band solar cells, but the scope is again to give clear understanding of the characterization of the quantum dot devices reported in the following chapters. A survey of the state of the art in the field is given, pointing out the differences with our technology. The initial part of my Ph.D. work was spent in developing the technology to design and grow (Al)GaAs photovoltaic devices, as well as the characterization techniques required to understand the behavior of such devices. In chapter 3 the method developed to design the solar cell structure is illustrated, and in chapter 5 the experimental setup used for characterization is presented, along with the measurements on the single junction devices realized during this work. Chapter 4 is dedicated to the description of the growth and fabrication methods used to grow the samples reported here. The development of the fabrication technology proceeded in close contact with the characterizations of the devices, in order to optimize the process. Finally in chapter 6 the results on quantum dot photovoltaic cells are reported: the key working principles of intermediate band devices have been demonstrated with our materials system, and this, to the knowledge of the author, is the first time that strain free quantum dot solar cells are reported of intermediate band behavior. The role of defects in the AlGaAs matrix is explained in connection with both the optical and electrical characterizations presented.
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KHALILI, ARASTOO. "Numerical study of InAs/GaAs quantum dot solar cells". Doctoral thesis, Politecnico di Torino, 2018. http://hdl.handle.net/11583/2712032.

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Solar energy conversion is a promising way to provide future energy demand since it is a clean energy. Unfortunately, the photovoltaic (PV) conversion of the solar energy is expensive, therefore, making attempts to increase the efficiency of PV is essential. A conventional single junction solar cell presents an efficiency limit that is determined by the Shockley-Queisser detailed balance principle (i.e. 40.7% under full sun concentration). The limit comes from the fact that only photons with energy close to the energy bandgap are efficiently converted. Below energy gap, photons are not absorbed since the cell is transparent to them and high energy photons only contribute part of their energy that is equal to the energy bandgap. Many concepts have been developed in order to increase the efficiency limit of solar cells. Among them the intermediate band solar cell (IBSC) has gained considerable attention. In principle, IBSCs have the potential to overcome Shockley-Queisser (SQ) limit of single junction solar cells by providing high current while preserving large voltage. The theoretical limit calculated for an ideal IBSC under full sun concentration is 63.1%. One of the most promising ways to realize the IBSC is to incorporate a QD superlattice in the active region of p-i-n single junction solar cells. The nano-size QDs behave like 3D potential well for the carriers and create discrete energy levels within the forbidden bandgap that allows sub-bandgap photon absorption. Stranski-Krastanov (S-K) growth mode (also called 'layer-plus-island growth') is one of the most common methods to fabricate QDs. This method has been used in many experimental studies for InAs/GaAs heteroepitaxial system which has lattice mismatch of 7.2%. Although InAs/GaAs is not an optimal material system for the IBSC performance, its properties and parameters are well reported in literature compared to other material systems. The drift-diffusion model is the most widely used mathematical approach to describe semiconductor devices. However, in case of quantum dot solar cells, the physics governing the device performance is not sufficiently covered and up to now, modeling of QDSCs has been treated as IBSC modeling through detailed balance principle and semi-analytical or numerical drift diffusion approaches. In this dissertation, QDSCs are investigated in detail by numerical simulation using a QD-aware physics-based model. The influence of selective doping in QDSCs is investigated considering different scenarios in terms of crystal quality. Regarding high-quality crystal, close to radiative limit, large open circuit voltage recovery is predicted in doped cells, due to the suppression of radiative recombination through QD ground state. In case of defective crystal, significant photovoltage recovery is also attained owing to the suppression of both non-radiative and QD ground state radiative recombination. The interplay between non-radiative and QD radiative recombination channels, and their interplay with respect to doping are analyzed in detail. Moreover, a numerical study on the influence of wetting layer states on the photovoltage loss of InAs/GaAs quantum dot solar cells is presented. Almost full open circuit voltage recovery is predicted by combining wetting layer reduction and selective doping. After investigating the inherent limitations of InAs/GaAs QD solar cells regarding realization of the IBSC, a brief description of QDs with type-II staggered band alignment based on GaSb/GaAs material systems (whose interband and intraband dynamics are more promising in view of attaining the IB operating regime) is given and a preliminary study of the competition between thermal and optical escape processes is presented.
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Hardingham, Christopher Mark. "GaAs and GaAs/Ge solar cells : a device and materials study using SEM-EBIC". Thesis, Imperial College London, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.267028.

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James, Asirvatham Juanita Saroj. "Characterization of type-II GaSb quantum rings in GaAs solar cells". Thesis, Lancaster University, 2015. http://eprints.lancs.ac.uk/80244/.

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The use of nanostructured materials in solar cells enables one to tune their absorption properties leading to a better match to the solar spectrum and subsequently an increased photocurrent through the solar cell. Type II GaSb/GaAs quantum rings (QRs) can significantly extend the spectral response beyond the visible out towards 1.4 µm giving a near optimum band gap for concentrator solar cell applications. Also, in type II band alignment the electrons are weakly localized and the built in electric field drifts the electrons across the depletion region easily. However, the introduction of GaSb QRs in GaAs solar cells degrades the open circuit voltage (Voc) and the incorporation of QRs needs to be optimized to minimize the Voc degradation while maximizing short circuit current density (Jsc) enhancement due to sub-bandgap absorption. The analysis of the photoresponse under the white light illumination has shown that some photogenerated minority holes from the base region can be re-captured by the QRs, which reduces the Jsc and the Voc. Hence, in this thesis, the carrier dynamics and extraction mechanisms occurring in the GaSb QRs is investigated by photoluminescence spectroscopy and current voltage characteristics. The characteristic S-shaped behaviour of the WL peak energy with increasing temperature indicates the prominent carrier trapping in the band tail states leading to potential fluctuations. Systematic measurements of dark current versus voltage characteristics are carried out from 100 to 290 K. Compared with the reference GaAs solar cell, the QRSC exhibits larger dark current, however its ideality factor n is similar at 290 K. QRs are directly probed by using an infrared laser (1064 nm) where the photon energy is conveniently chosen below the bandgap of the GaAs matrix. This enables to investigate the carrier dynamics and extraction mechanisms occurring in the GaSb QRs under a high light concentration. The dependence of the photocurrent on the laser intensity, the bias and the temperature is also discussed. The QR photocurrent exhibits a linear dependence on the excitation intensity over several decades. The thermal activation energy was found to be weakly dependent on the incident light level and increased by only a few meV over several orders of excitation intensity. The magnitude of the relative absorption in QRs when directly probed by using a 1064 nm laser with an incident power density of ~ 2.6 W cm−2 is found to be ~ 1.4 × 10−4 per layer. The thermal escape rate of the holes was calculated and found to be ~ 1011 to 1012 s −1 , which is much faster than the radiative recombination rate 109 s −1 . This behaviour is promising for concentrator solar cell development and has the potential to increase solar cell efficiency under a strong solar concentration. Experiments have shown that QDs embedded in the depletion region could generate both additional photocurrent and dark current. The electron-hole recombination in QDs is the reason for the additional dark current which reduces the open circuit voltage and keeps the conversion efficiency of QD solar cells below the ShockleyQueisser limit. Therefore, the reduction in open circuit voltage and the influence of the location of QR layers and their delta doping within the solar cell is investigated in this work. Devices with 5 layers of delta doped QRs placed in the intrinsic, n and p regions of a GaAs solar cell are experimentally investigated and the deduced values of Jsc, Voc, Fill factor (FF), efficiency (η) are compared. A trade-off is needed to minimize the Voc degradation while maximizing the short circuit current density (Jsc) enhancement due to sub-bandgap absorption. The voltage recovery is attributed to the removal of the QDs from the high field region which reduces SRH recombination. The devices with p or n doped QDs placed in the flat band potential (p or n region) show a recovery in Jsc and Voc compared to devices with delta doped QDs placed in the depletion region. However there is less photocurrent arising from the absorption of sub-band gap photons. Furthermore, the long wavelength photoresponse of the n doped QRs placed in the n region shows a slight improvement compared to the control cell. The approach of placing QRs in the n region of the solar cell instead of the depletion region is a possible route towards increasing the conversion efficiency of QR solar cells. The effect of the introduction of dopants on the morphology of GaSb/GaAs nanostructures is analyzed by HAADF-STEM. The results show the presence of welldeveloped GaSb QRs in both p-doped and n-doped heterostructures. However, in the undoped sample grown under the same conditions such well-developed QRs have not been observed. It is found that p-doping with Be stimulates the formation of QRs, whereas n-doping with Te results in the formation of GaSb nanocups. Therefore, the introduction of dopants in the growth of GaSb nanostructures has a significant effect on their morphology. Bias and temperature dependent EQE measurements are performed to understand the hole extraction from the QRs. In order to study the absorption strength of quantum dots and the various transition states, an approach to derive the below-bandgap absorption in GaSb/GaAs self-assembled quantum ring (QR) devices using room temperature external quantum efficiency measurement results is presented. The importance of incorporating an extended Urbach tail absorption in analyzing QR devices is demonstrated. The theoretically integrated absorbance via QR ground states is calculated as 1.04 ×1015 cm -1 s -1 , which is in a reasonable agreement with the experimental derived value 8.1 ×1015 cm-1 s -1 . The wetting layer and QR absorption contributions are separated from the tail absorption and their transition energies are calculated. Using these transition energies and the GaAs energy gap of 1.42 eV, the heavy hole confinement energies for the QRs (320 meV) and for the WL (120 meV) were estimated.
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Pelati, Daniel. "Elaboration of GaAs solar cells based on textured substrates on glass". Electronic Thesis or Diss., Sorbonne université, 2019. https://accesdistant.sorbonne-universite.fr/login?url=https://theses-intra.sorbonne-universite.fr/2019SORUS456.pdf.

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Les cellules solaires à base de GaAs détiennent le record d’efficacité pour les architectures à simple jonction, mais le coût des substrats GaAs monocristallins restreint fortement leur utilisation. Dans ce travail, nous avons fabriqué des substrats alternatifs pour la croissance de GaAs, basés sur la combinaison d’un support en silice et d’un film mince (20 nm) de Germanium. Ce dernier est presque à l’accord de maille avec le GaAs et on peut obtenir une texture (111) prononcée en utilisant le procédé de cristallisation induite par un métal (MIC). La texture cristalline est très dépendante des conditions de dépôt et de recuit, ce qui a nécessité le développement d’un microscope in situ pour suivre et optimiser cette étape. Nous avons identifié deux mécanismes de cristallisation, dont l'un perturbe celui qui est responsable de l’orientation (111). Nous avons ensuite réalisé la croissance de GaAs sur ces surfaces de Ge texturées par épitaxie par jets moléculaires (MBE). Nous avons identifié les conditions nécessaires à l’obtention sur Ge(111) de couches de GaAs sans macle ni autre défaut étendu. Les couches de GaAs obtenues présentent une polarité (111)A plutôt que l’orientation (111)B habituellement observée. Enfin, nous avons fabriqué des cellules solaire GaAs orientées (111)B avec un rendement photovoltaïque de 15,9 %. Le transfert de cette cellule sur des substrats Ge(111) et sur nos couches de Ge texturées sur silice révèle un dopage difficile, lié à l’orientation (111)A du GaAs, et une rugosité de surface importante induite par les joints de grain présents dans la couche de Ge initiale
The increasing demand for clean energy has driven research toward higher efficiency and lower cost solar cells. Gallium arsenide solar cells detain the record efficiency for single junction devices but the high cost of the substrate limits their applications. In this work, we investigate an alternative GaAs substrate based on a low cost silica support coated by a thin (20 nm) Germanium layer. This layer is nearly lattice-matched to GaAs and can be crystallized with a high (111) texture using Metal Induced Crystallization (MIC). However, this requires a careful optimization of the deposition and annealing parameters. Here, we use a specially designed in situ optical microscope to optimize the annealing sequence. In particular, we identified two crystallization pathways, of which one should be minimized to obtain a good (111) crystalline texture. We then perform the heteroepitaxy of GaAs on this Ge seed layer using Molecular Beam Epitaxy, keeping the initial (111) crystal texture. We identify specific growth conditions for the twin- and defect-free growth of GaAs on Ge(111) surfaces. We also observe the growth of GaAs adopting the (111)A polarity on Ge (111) rather than the expected (111)B orientation. Finally, we fabricate (111)-oriented GaAs solar cells with 15,9% efficiency on a monocrystalline GaAs(111)B substrate. The transfer to standard Ge(111) monocrystalline wafers and to our Ge-coated silica pseudo-substrates reveals doping issues related to the (111)A orientation of the GaAs, as well as surface roughening due to grain boundaries in the initial Ge seed layer
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Książki na temat "GaAs solar cells"

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P, Leon Rosa, Arrison Anne i United States. National Aeronautics and Space Administration., red. A V-grooved AlGaAs/GaAs passivated PN junction. [Washington, DC]: National Aeronautics and Space Administration, 1987.

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P, Leon Rosa, Arrison Anne i United States. National Aeronautics and Space Administration., red. A V-grooved AlGaAs/GaAs passivated PN junction. [Washington, DC]: National Aeronautics and Space Administration, 1987.

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United States. National Aeronautics and Space Administration., red. GaAs solar cell radiation handbook. Pasadena, Calif: National Aeronautics and Space Administration, Jet Propulsion Laboratory, California Institute of Technology, 1996.

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United States. National Aeronautics and Space Administration., red. GaAs solar cell radiation handbook. Pasadena, Calif: National Aeronautics and Space Administration, Jet Propulsion Laboratory, California Institute of Technology, 1996.

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Jet Propulsion Laboratory (U.S.), red. GaAs solar cell radiation handbook. Pasadena, Calif: National Aeronautics and Space Administration, Jet Propulsion Laboratory, California Institute of Technology, 1996.

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Jet Propulsion Laboratory (U.S.), red. GaAs solar cell radiation handbook. Pasadena, Calif: National Aeronautics and Space Administration, Jet Propulsion Laboratory, California Institute of Technology, 1996.

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Weinberg, Irving. Heteroepitaxial InP solar cells on Si and GaAs substrates. [Washington, DC]: National Aeronautics and Space Administration, 1991.

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A, Scheiman David, Brinker David J i Lewis Research Center, red. GaAs/Ge solar powered aircraft. [Cleveland, Ohio]: National Aeronautics and Space Administration, Lewis Research Center, 1998.

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A, Scheiman David, Brinker David J i Lewis Research Center, red. GaAs/Ge solar powered aircraft. [Cleveland, Ohio]: National Aeronautics and Space Administration, Lewis Research Center, 1998.

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G, Bailey Sheila, i United States. National Aeronautics and Space Administration., red. The GaAs solar cells with V-grooved emitters. [Washington, DC]: National Aeronautics and Space Administration, 1989.

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Części książek na temat "GaAs solar cells"

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Das, Narottam K., i Syed M. Islam. "Conversion Efficiency Improvement in GaAs Solar Cells". W Large Scale Renewable Power Generation, 53–75. Singapore: Springer Singapore, 2014. http://dx.doi.org/10.1007/978-981-4585-30-9_3.

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Andreev, V. M., V. S. Kalinovskii i O. V. Sulima. "AlGaAs-GaAs Solar Cells with Increased Radiation Stability". W Tenth E.C. Photovoltaic Solar Energy Conference, 52–54. Dordrecht: Springer Netherlands, 1991. http://dx.doi.org/10.1007/978-94-011-3622-8_13.

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Alsema, E. A., R. F. A. Cuelenaere i W. C. Turkenburg. "Cost Perspectives of GaAs Thin-Film Solar Cells". W Tenth E.C. Photovoltaic Solar Energy Conference, 563–66. Dordrecht: Springer Netherlands, 1991. http://dx.doi.org/10.1007/978-94-011-3622-8_143.

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Nowlan, M. J., i G. Darkazalli. "Electrostatic Cover Glass Bonding to GaAs Solar Cells". W Tenth E.C. Photovoltaic Solar Energy Conference, 963–66. Dordrecht: Springer Netherlands, 1991. http://dx.doi.org/10.1007/978-94-011-3622-8_246.

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Welter, H., A. Bett, A. Ehrhardt i W. Wettling. "Investigations of Emitter Characteristics of LPE GaAs Solar Cells". W Tenth E.C. Photovoltaic Solar Energy Conference, 537–40. Dordrecht: Springer Netherlands, 1991. http://dx.doi.org/10.1007/978-94-011-3622-8_136.

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Vilela, M. F., A. Leycuras, A. Freundlich, J. C. Grenet, G. Strobl, M. Leroux, G. Neu, P. Gibart, C. Vèrié i G. Brémond. "GaAs on Si Solar Cells: Photovoltaic Characterization of GaAs Grown Directly on Si and with Intermediate Buffer". W Tenth E.C. Photovoltaic Solar Energy Conference, 798–801. Dordrecht: Springer Netherlands, 1991. http://dx.doi.org/10.1007/978-94-011-3622-8_204.

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Tobías, I., A. Luque, J. C. Miñano i J. Alonso. "Sizing of Light Confining Cavities for GaAs and Si Solar Cells". W Tenth E.C. Photovoltaic Solar Energy Conference, 48–51. Dordrecht: Springer Netherlands, 1991. http://dx.doi.org/10.1007/978-94-011-3622-8_12.

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Nell, M. E., Z. El-Ankah, H. Eschrich, D. D. Lin, G. Nischwitz, B. Reinicke i H. G. Wagemann. "Design and Measurement of Antireflection Coatings for AlGaAs/GaAs Solar Cells". W Tenth E.C. Photovoltaic Solar Energy Conference, 545–48. Dordrecht: Springer Netherlands, 1991. http://dx.doi.org/10.1007/978-94-011-3622-8_138.

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Alcubilla, R., L. Prat i F. Therez. "GaAlAs/gaAs Solar Cells. Bulk Graded Band Gap Structures, an Optimization". W Seventh E.C. Photovoltaic Solar Energy Conference, 895–99. Dordrecht: Springer Netherlands, 1987. http://dx.doi.org/10.1007/978-94-009-3817-5_159.

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Prashant, D. V., i Dip Prakash Samajdar. "GaAs Nanostructure-Based Solar Cells with Enhanced Light-Harvesting Efficiency". W Internet of Things, 227–46. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9781003181613-16.

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Streszczenia konferencji na temat "GaAs solar cells"

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Patel, R. M., S. W. Gersten, D. R. Perrachione, Y. C. M. Yeh, D. K. Wagner i R. K. Morris. "Lightweight GaAs/Ge solar cells". W Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference. IEEE, 1988. http://dx.doi.org/10.1109/pvsc.1988.105774.

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La Roche, G. J. "Processing of GaAs solar cells". W Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference. IEEE, 1988. http://dx.doi.org/10.1109/pvsc.1988.105850.

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Nakayama, Keisuke, Katsuaki Tanabe i Harry A. Atwater. "Surface plasmon enhanced photocurrent in thin GaAs solar cells". W Solar Energy + Applications, redaktor Loucas Tsakalakos. SPIE, 2008. http://dx.doi.org/10.1117/12.795469.

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Grenko, A. J., I. Kimukin, J. Walker i E. Towe. "InAs/GaAs Quantum-Dot Intermediate-Band Solar Cells". W Solar Energy: New Materials and Nanostructured Devices for High Efficiency. Washington, D.C.: OSA, 2008. http://dx.doi.org/10.1364/solar.2008.swa4.

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Tracy, J., i J. Wise. "Space solar cell performance for advanced GaAs and Si solar cells". W Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference. IEEE, 1988. http://dx.doi.org/10.1109/pvsc.1988.105823.

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MacMillan, H. F., H. C. Hamaker, N. R. Kaminar, M. S. Kuryla, M. L. Ristow, D. D. Liu, G. F. Virshup i J. M. Gee. "28% efficient GaAs concentrator solar cells". W Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference. IEEE, 1988. http://dx.doi.org/10.1109/pvsc.1988.105745.

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Araujo, G. L., i A. Marti. "Limiting efficiency of GaAs solar cells". W Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference. IEEE, 1988. http://dx.doi.org/10.1109/pvsc.1988.105788.

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Olsen, L. C., Xiaojun Deng, Wenhua Lei, F. W. Addis i Jun Li. "GaAs solar cells grown on GaP". W Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996. IEEE, 1996. http://dx.doi.org/10.1109/pvsc.1996.563946.

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Iles, P. A., F. H. Ho i Y. C. M. Yeh. "Manufacturing Experience With GaAs Solar Cells". W Cambridge Symposium-Fiber/LASE '86, redaktor David Adler. SPIE, 1986. http://dx.doi.org/10.1117/12.937226.

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Laghumavarapu, R. B., G. Mariani, B. Tremolet de Villers, J. Shapiro, P. Senanayake, A. Lin, B. J. Schwartz i D. L. Huffaker. "Hybrid solar cells using GaAs nanopillars". W 2010 35th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2010. http://dx.doi.org/10.1109/pvsc.2010.5614637.

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Raporty organizacyjne na temat "GaAs solar cells"

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Vernon, S. M. Low-cost, high-efficiency solar cells utilizing GaAs-on-Si technology. Annual subcontract report, 1 August 1991--31 July 1992. Office of Scientific and Technical Information (OSTI), kwiecień 1993. http://dx.doi.org/10.2172/10141157.

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Vernon, S. M. Low-Cost, High-Efficiency Solar Cells Utilizing GaAs-on-Si Technology, Annual Subcontract Report, 1 August 1991 - 31 July 1992. Office of Scientific and Technical Information (OSTI), kwiecień 1993. http://dx.doi.org/10.2172/6836731.

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McNeely, James B., Gerald H. Negley i Allen M. Barnett. GaAsP Top Solar Cells for Increased Solar Conversion Efficiency. Fort Belvoir, VA: Defense Technical Information Center, styczeń 1989. http://dx.doi.org/10.21236/ada206808.

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Wagner, Ken. Rugged, Thin GaAs Solar Cell Development. Fort Belvoir, VA: Defense Technical Information Center, maj 1988. http://dx.doi.org/10.21236/ada198533.

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Yeh, Y. C., Kou-I. chang i Peter A. Iles. Rugged, Thin GaAs Solar Cell Development. Phase I. Fort Belvoir, VA: Defense Technical Information Center, czerwiec 1986. http://dx.doi.org/10.21236/ada171188.

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Shealy, J., P. McDonald, J. Benjamin i D. Wagner. GaAs solar cell with low surface recombination. Final subcontract report. Office of Scientific and Technical Information (OSTI), listopad 1985. http://dx.doi.org/10.2172/6406702.

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Grassman, Tyler, Steven Ringel, Emily Warren, Stephen Bremner i Alex Stavrides. GaAsP/Si Tandem Solar Cells: Pathway to Low-Cost, High-Efficiency Photovoltaics. Office of Scientific and Technical Information (OSTI), maj 2021. http://dx.doi.org/10.2172/1784256.

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Das, Naresh C. Performance Comparison of Top and Bottom Contact Gallium Arsenide (GaAs) Solar Cell. Fort Belvoir, VA: Defense Technical Information Center, wrzesień 2014. http://dx.doi.org/10.21236/ada608815.

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Venkatasubramanian, R. Inverted AlGaAs/GaAs Patterned-Ge Tunnel Junction Cascade Concentrator Solar Cell: Final Subcontract Report, 1 January 1991 - 31 August 1992. Office of Scientific and Technical Information (OSTI), styczeń 1993. http://dx.doi.org/10.2172/6744462.

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Lamorte, M. A high-efficiency, single-junction, back-surface GaAs concentrator solar cell: Annual subcontract report, 1 February 1985-30 April 1986. Office of Scientific and Technical Information (OSTI), maj 1987. http://dx.doi.org/10.2172/6177328.

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