Gotowe bibliografie tematyczne / Focused Ion Beam machining

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Gotowa bibliografia na temat „Focused Ion Beam machining”

Autor: Grafiati

Data publikacji: 6 września 2023

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Artykuły w czasopismach na temat "Focused Ion Beam machining"

Allen, D. M., P. Shore, R. W. Evans, C. Fanara, W. O’Brien, S. Marson i W. O’Neill. "Ion beam, focused ion beam, and plasma discharge machining". CIRP Annals 58, nr 2 (2009): 647–62. http://dx.doi.org/10.1016/j.cirp.2009.09.007.

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Hung, N. P., Y. Q. Fu i M. Y. Ali. "Focused ion beam machining of silicon". Journal of Materials Processing Technology 127, nr 2 (wrzesień 2002): 256–60. http://dx.doi.org/10.1016/s0924-0136(02)00153-x.

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Young, Richard J. "Micro-machining using a focused ion beam". Vacuum 44, nr 3-4 (marzec 1993): 353–56. http://dx.doi.org/10.1016/0042-207x(93)90182-a.

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Chen, Yan, Li Bao An i Xiao Xia Yang. "Recent Development of Focused Ion Beam System and Application". Advanced Materials Research 753-755 (sierpień 2013): 2578–81. http://dx.doi.org/10.4028/www.scientific.net/amr.753-755.2578.

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Ultra-precision machining is used for many engineering applications where the traditional processes fail to work. Focused ion beam (FIB) technology is a very important part of the ultra-precision machining. It can realize the precise positioning, microscopic observation and micro machining. This paper introduces the FIB system and its application. FIB system contains ion source, focusing and scanning equipment and sample station. FIB technique has many unique and important functions. It is widely used in semiconductor device fabrication and circuit failure analysis. It can realize sample etching, imaging, thin film deposited, ion implantation and micromachining.

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Sun, Ji Ning, Xi Chun Luo, Wen Long Chang i James M. Ritchie. "Fabrication of Freeform Micro Optics by Focused Ion Beam". Key Engineering Materials 516 (czerwiec 2012): 414–19. http://dx.doi.org/10.4028/www.scientific.net/kem.516.414.

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In this work, two kinds of freeform micro optics were successfully fabricated by using focused ion beam machining. A divergence compensation method was applied to optimize the machining process. Both dynamic variation of the sputter yield and the extra ion flux contributed by the beam tail were taken into consideration. Measurement results on the surface topography indicated that 3-fold improvement of the relative divergence was achieved for both optics when compared with conventional focused ion beam milling without any corrections. Furthermore, investigations on the influences of scanning strategies, including raster scan, serpentine scan and contour scan, were carried out. The serpentine scan is recommended for the fabrication of freeform optics by focused ion beam technology owing to the minimal beam travelling distance over the pattern area.

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Atiqah, N., I. H. Jaafar, Mohammad Yeakub Ali i B. Asfana. "Application of Focused Ion Beam Micromachining: A Review". Advanced Materials Research 576 (październik 2012): 507–10. http://dx.doi.org/10.4028/www.scientific.net/amr.576.507.

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Fabrication of micro and nanoscale components are in high demand for various applications in diversified fields that include automotive, electronics, communication and medicine. Focused ion beam (FIB) machining is one of the techniques for microfabrication of micro devices. This paper presents a review of FIB machining technology that include its parameter, responses, its important component systems, as well as the fundamentals of imaging, milling (etching) and deposition techniques. The application of FIB in micromachining is also presented.

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Taniguchi, Jun, Shin-ichi Satake, Takaki Oosumi, Akihisa Fukushige i Yasuo Kogo. "Dwell time adjustment for focused ion beam machining". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 307 (lipiec 2013): 248–52. http://dx.doi.org/10.1016/j.nimb.2013.02.039.

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Kitamura, Masaru, Eijiro Koike, Noboru Takasu i Tetsuro Nishimura. "Focused Ion Beam Machining for Optical Microlens Fabrication". Japanese Journal of Applied Physics 41, Part 1, No. 6A (15.06.2002): 4019–21. http://dx.doi.org/10.1143/jjap.41.4019.

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Davies, ST, i B. Khamsehpour. "Focused ion beam machining and deposition for nanofabrication". Vacuum 47, nr 5 (maj 1996): 455–62. http://dx.doi.org/10.1016/0042-207x(95)00235-9.

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Jiang, Xiao Xiao, Feng Wen Wang, Zhen He Ma, Qiong Chan Gu, Jiang Tao Lv i Guang Yuan Si. "Arbitrary Structures Fabricated by Focused Ion Beam Milling". Advanced Materials Research 661 (luty 2013): 66–69. http://dx.doi.org/10.4028/www.scientific.net/amr.661.66.

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Optical components at the nanoscale are crucial for developing photonics and integrated optics. Device with ultrasmall dimensions is of particular importance for nanoscience and electronic technology. Among all the manufacturing tools, the focused ion beam is a critical candidate for machining and processing optical devices at the nanoscale. Here, we experimentally demonstrate the fabrication of nanodevices with arbitrary shapes and different potential applications using focused ion beam techniques.

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Rozprawy doktorskie na temat "Focused Ion Beam machining"

Evans, R. "Focused ion beam machining of hard materials for micro engineering applications". Thesis, Cranfield University, 2009. http://dspace.lib.cranfield.ac.uk/handle/1826/4417.

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The Focused Ion Beam (FIB) milling of single crystal diamond was investigated and the beam drift and mill yield were quantified. The effect of water assistance on the milling of diamond was found to double the yield. The surface morphology that spontaneously forms during milling was measured and the mechanisms behind its formation investigated. The effect of gallium implantation on the diamond crystal structure was measured by x-ray diffraction. Chemical vapour deposited polycrystalline diamond (PCD) has been machined into micro scale turning tools using a combination of laser processing and FIB machining. Laser processing was used to machine PCD into rounded tool blanks and then the FIB was used to produce sharp cutting edges. This combines the volume removal ability of the laser with the small volume but high precision ability of the FIB. Turning tools with cutting edges of 39µm and 13µm were produced and tested by machining micro channels into oxygen free high conductivity copper (OFHCC). The best surface quality achieved was 28nm Sq. This is compared to a Sq of 69nm for a commercial PCD tool tested under the same circumstances. The 28nm roughness compares well to other published work that has reported a Ra of 20nm when machining OFHCC with single crystal diamond tools produced by FIB machining. The time taken to FIB machine a turning tool from a lasered blank was approximately 6.5 hours. Improvements to the machining process and set up have been suggested that should reduce this to ~1 hour, making this a more cost effective process. PCD tools with sinusoidal cutting prongs were produced using FIB. The dimensions of the prongs were less than 10µm. The tools were tested in OFHCC and the prongs survived intact. Changes to the machining conditions are suggested for improved replication of the prongs into metal. Sapphire was FIB machined to produce nano and micro patterns on a curved surface. The sapphire is part of a micro injection mould for replication of polymer parts. The comparative economics of hot embossing and injection moulding have been studied. Injection moulding was found to be the more cost effective process for making polymer parts at commercial production levels.

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Chitsaz, Charandabi Sahand. "Development of a Lorentz force drive system for a torsional paddle microresonator using Focused Ion Beam machining". Thesis, University of Birmingham, 2014. http://etheses.bham.ac.uk//id/eprint/4872/.

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This thesis focuses on the concept, design, fabrication and characterisation of a torsional micro paddle resonator. The ultimate intention is to use the device for rapid detection of anthrax bacteria. A comprehensive research was carried out to review the state of the art in MEMS based mass sensing. Various driving and detection strategies were investigated and discussed. Based on evidence from literature, a novel approach was adopted to realise a device with improved functionality and overcome currently existing drawbacks. The working principle of the proposed device is based on electromagnetic actuation and monitoring of the shift in resonance frequency of a micro paddle. The design of the paddle was optimised using theoretical and finite element methods. Dual beam Focused Ion Beam (FIB) machining techniques were used to fabricate the prototype devices. The chosen substrate is a LPCVD 200 nm thick silicon nitride membrane. Prior to milling the substrate, the sputtering rate of silicon nitride was validated experimentally to ensure machining stability. Different actuating pattern designs were fabricated to generate torque including micro spiral coil, micro dual loop, and single conductive track on the micro paddle. The geometry was finalised for a defined working condition of 1 MHz resonance frequency. Important fabrication parameters were discussed and damage prevention issues were investigated. The sensitivity to the added mass was experimentally characterised and found to be 2.35 fg/Hz. To characterise the asymmetrical paddle resonator, piezoelectric excitation was applied to the device and a laser Doppler vibrometer was used to record the resonant frequency. Resonant frequencies of 0.841 and 0.818 MHz were detected by testing the device in an air medium and a quality factor of about 300 was calculated by applying a Lorentzian curve fit to collected data.

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Zhang, Haoyu. "Application of focused ion beam for micro-machining and controlled quantum dot formation on patterned GaAs substrate". Thesis, University of Sheffield, 2013. http://etheses.whiterose.ac.uk/6408/.

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This project is a study based on the application of focused ion beam (FIB) instrumentation, which has been widely used in fields such as electronic engineering, materials science, semiconductor technology and nanotechnology. We used a Ga+ source focused ion beam column from Orsay Physics mounted on a JEOL 6500F scanning electron microscopy, which forms a SEM-FIB dual-beam instrument. This project consists of a few experimental projects based on the applications of the FIB in electronic engineering. The experimental work will demonstrate the micro-machining capability of the FIB system. The projects include the TEM/STEM cross-sectional sample preparation and the fabrication of a ring shaped aperture and a coded aperture for (S)TEM imaging. The major project is to study InAs quantum dots grown on a FIB patterned GaAs (100) substrate, in order to produce regular arrays of quantum dots at specific sites. In(Ga)As quantum dots have been a very popular topic in electronic engineering for a long time. InGaAs quantum dots have an energy band gap between 0.66eV and 1.41eV, covering the range from infrared (IR) to visible light, which can be used for constructing infrared detectors, solar cells and etc. Regular quantum dot arrays are expected to have better size distribution and high uniformity over a small area with respect to randomly located self-assembled quantum dots, which results in better opto-electronic performance. Overgrowth of a FIB patterned substrate is one of the techniques to produce regular quantum dot arrays. Island-shaped quantum dots are nucleated at specific locations where the ion beam has formerly patterned the surface. Different ion beam patterning parameters are compared and optimized, including accelerating voltage, probe current, dwell time, pitch, growth temperature and thickness of deposited InAs. We have determined the range of the ion beam parameters and the overgrowth conditions, which consistently produce regular quantum dot arrays at the patterned areas without nucleation outside the patterned areas. The relationship between the size of the formed islands and the patterning parameters is investigated by analysing SEM images and AFM images. Micro-photoluminescence and TEM EDX analysis are applied to study the islands formed, to find out the optoelectronic performance and the chemical composition.

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Castro, Olivier de. "Development of a Versatile High-Brightness Electron Impact Ion Source for Nano-Machining, Nano-Imaging and Nano-Analysis". Thesis, Université Paris-Saclay (ComUE), 2016. http://www.theses.fr/2016SACLS468/document.

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Les nano-applications utilisant des faisceaux d'ions focalisés nécessitent des sources d'ions à haute brillance avec une faible dispersion en énergie (ΔE) ce qui permet une excellente résolution latérale et un courant d'ions suffisamment élevé pour induire des vitesses d'érosion raisonnables et des rendements élevés d'émission électronique et ionique. Les objectifs de cette thèse sont le développement d'une source d'ions basée sur l'impact électronique ayant une brillance réduite Br de 10³ – 10⁴ A m⁻² sr ⁻ ¹ V⁻ ¹, une dispersion en énergie ΔE ≲ 1 eV et un choix polyvalent d'ions. Le premier concept évalué consiste à focaliser un faisceau d'électrons à une énergie de 1 keV entre deux électrodes parallèles distant de moins d'un millimètre. Le volume d'ionisation « micrométrique » est formé au-dessus d'une ouverture d'extraction de quelques dizaines de µm. En utilisant un émetteur d'électrons LaB₆ et une pression de 0.1 mbar dans la région d'ionisation, Br est proche de 2.10² A m⁻² sr ⁻ ¹ V ⁻ ¹ avec des tailles de source de quelques µm, des courants de quelques nA pour Ar⁺/Xe⁺/O₂ ⁺ et une dispersion en énergie ΔE < 0.5 eV. La brillance réduite Br est encore en dessous de la valeur minimum de notre objectif et la pression de fonctionnement très faible nécessaire pour l'émetteur LaB₆ ne peut être obtenue avec une colonne d'électrons compacte, donc ce prototype n'a pas été construit.Le deuxième concept de source d'ions évalué est basé sur l’idée d’obtenir un faisceau ionique à fort courant avec une taille de source et un demi-angle d’ouverture similaire aux résultats du premier concept de source, mais en changeant l’interaction électron-gaz et la collection des ions. Des études théoriques et expérimentales sont utilisées pour l’évaluation de la performance de ce deuxième concept et de son utilité pour les nano-applications basées sur des faisceaux d'ions focalisés
High brightness low energy spread (ΔE) ion sources are needed for focused ion beam nano-applications in order to get a high lateral resolution while having sufficiently high ion beam currents to obtain reasonable erosion rates and large secondary electron/ion yields. The objectives of this thesis are: the design of an electron impact ion source, a reduced brightness Br of 10³ – 10⁴ A m⁻² sr⁻ ¹ V⁻ ¹ with an energy distribution spread ΔE ≲ 1 eV and a versatile ion species choice. In a first evaluated concept an electron beam is focussed in between two parallel plates spaced by ≲1 mm. A micron sized ionisation volume is created above an extraction aperture of a few tens of µm. By using a LaB₆ electron emitter and the ionisation region with a pressure around 0.1 mbar, Br is close to 2.10² A m⁻² sr ⁻ ¹ V ⁻ ¹ with source sizes of a few µm, ionic currents of a few nA for Ar⁺/Xe⁺/O₂ ⁺ and the energy spread being ΔE < 0.5 eV. The determined Br value is still below the minimum targeted value and furthermore the main difficulty is that the needed operation pressure for the LaB₆ emitter cannot be achieved across the compact electron column and therefore a prototype has not been constructed. The second evaluated source concept is based on the idea to obtain a high current ion beam having a source size and half-opening beam angle similar to the first concept, but changing the electron gas interaction and the ion collection. Theoretical and experimental studies are used to evaluate the performance of this second source concept and its usefulness for focused ion beam nano-applications

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Latif, Adnan. "Nanofabrication using focused ion beam". Thesis, University of Cambridge, 2000. https://www.repository.cam.ac.uk/handle/1810/34605.

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Focused ion beam (FIB) technique uses a focused beam of ions to scan the surface of aspecimen, analogous to the way scanning electron microscope (SEM) utilizes electrons. Recent developments in the FIB technology have led to beam spot size below 10 nm,which makes FIB suitable for nanofabrication. This project investigated thenanofabrication aspect of the FIB technique, with device applications perspective inseveral directions. Project work included construction of an in-situ FIB electricalmeasurement system and development of its applications, direct measurements ofnanometer scale FIB cuts and fabrication and testing of lateral field emission devices. Research work was performed using a number of materials including Al, Cr, SiO2, Si3N4and their heterostructures. Measurements performed included in-situ resistometricmeasurements, which provided milled depth information by monitoring the resistancechange of a metal track while ion milling it. The reproducibly of this method wasconfirmed by repeating experiments and accuracy was proven by atomic force microscopy(AFM). The system accurately monitored the thickness of 50 nm wide and 400 nm thick(high aspect ratio) Nb tracks while ion milling them. Direct measurements of low aspectratio nanometer scale FIB cuts were performed using AFM on single crystal Si,polycrystalline Nb and an amorphous material. These experiments demonstrated theimportance of materials aspects for example the presence of grains for cuts at this scale. Anew lateral field emission device (in the plane of the chip) was fabricated, as FIB offersseveral advantages for these devices such as control over sharpness and decrease in anodeto-cathode spacing. FIB fabrication achieved field emission tip sharpness below 50 nm andanode-to-cathode spacing below 100 nm. For determining the field emission characteristicsof the devices, a low current (picoampere) measurement system was constructed anddevices operated in ultra high vacuum (10-9 mbar) in picoampere range. One devicefabricated using a FIB sharpening process had a turn on voltage of 57 V.

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Naik, Jay Prakash. "Nanowires fabricated by Focused Ion Beam". Thesis, University of Birmingham, 2013. http://etheses.bham.ac.uk//id/eprint/4638/.

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This thesis reports research on nanowires fabricated by FIB lithography with experiments to understand their mechanical, electrical and hydrodynamic properties. Au nanowires fabricated on Si\(_3\)N\(_4\) membranes with width below 50nm exhibit liquid like instabilities and below \(\sim\)20nm the instabilities grow destroying the nanowires due to the Rayleigh- Plateau instability. Stability is better in the case for Si substrates than for the insulators Si0\(_2\) and Si\(_3\)N\(_4\). A series of 4-terminal resistance measurements were carried out on a "platinum" nanowire grown by FIB-induced decomposition of an organometallic precursor. Such nanowires are found to be a two phase percolating system, containing up to 70% by volume carbon. They have unexpected temperature behaviour which is explained using a percolation model with Kirkpatrick conduction in the presence of temperature induced strain. Au nanowire bridges of very small diameter were probed using AFM to investigate their deformation and fracture strength. Below a diameter \(\sim\)50nm, the mechanical properties are consistent with liquid-like behaviour. After reaching the fracture, the gold molecules from the bridge retract towards the fixed ends; rebinding of the gold causing reforming of the nanowire bridge can occur. FIB fabrication was also used to form a thermal bimorph MEMS cantilever which was investigated by AFM during actuation.

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Wong, Ka Chun. "Focused Ion Beam Nanomachining of Thermoplastic Polymers". Thesis, North Carolina State University, 2013. http://pqdtopen.proquest.com/#viewpdf?dispub=3538536.

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Commercially available Ga⁺ focused ion beam (FIB) instruments with nanometer size probe allows for in situ materials removal (sputtering) and addition (deposition) on a wide range of material. These spatially precise processes have enabled a wide range of nanofacbrication operations (e.g. specimen preparation for analysis by scanning electron microscope, transmission electron microscope, and secondary ion mass spectrometer). While there exists an established knowledge of FIB methods for sample preparation of hard materials, but FIB methodology remain underdeveloped for soft materials such as biological and polymeric materials.

As FIB is increasingly utilized for specimen preparation of polymeric materials, it is becoming necessary to formulate an information base that will allow established FIB techniques to be generalized to this spectrum of materials. A thorough understanding of the fundamental ion-solid interactions that govern the milling process can be instrumental. Therefore, in an effort to make the existing procedures more universally applicable, the interrelationships between target material, variable processing parameters, and process efficiency of the milling phenomena are examined. The roles of beam current, distance (i.e. step size) between successive FIB beam dwell and the time it spent at each dwell point (i.e. pixel dwell time) are considered as applied to FIB nanomachining of four different thermoplastic polymers: 1. low density polyethylene (LDPE), 2. high density polyethylene (HDPE), 3. Polystyrene (PS), and 4. nylon 6 (PA6). Careful characterization of such relationships is used to explain observed phenomena and predict expected milling behaviors, thus allowing the FIB to be used more efficiently with reproducible results. Applications involving different types of polymer composite fiber are presented.

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Sabouri, Aydin. "Nanofabrication by means of focused ion beam". Thesis, University of Birmingham, 2015. http://etheses.bham.ac.uk//id/eprint/5987/.

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Focused ion beam (FIB) systems have been used widely in micro/nano technology due to their unique capabilities. In this fabrication technique, ions are accelerated towards the sample surfaces and substrate atoms are removed. Despite the ubiquity of this method, several problems remain unsolved and are not fully understood. In this thesis, the effects of FIB machining and its halo effects on substrate are investigated. A novel detector which can perform measurements of the current density profile of the generated beam, was successfully demonstrated. The effect of ion solid interactions for 30keV Ga FIB are investigated through atomic force microscopy (AFM) and Raman spectroscopy, for various machining parameters such as current, dwell time and pixel spacing. The FIB implanted regions were also studied for use as a hard mask in plasma etching, and was found to be suitable for high speed patterning in large area fabrication of nano-featured surfaces for metamaterials. It was observed by controlling the implantation parameters, the ultra-thin structures could be made. These structures have wide range of applications such as nano-scale resonators with application of chemical and biological sensing, membranes with nano-pores for DNA translocation and fabrication of near field optical devices.

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Della, Ratta Anthony D. (Anthony David). "Focused ion beam induced deposition of copper". Thesis, Massachusetts Institute of Technology, 1993. http://hdl.handle.net/1721.1/12418.

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Shedd, Gordon M. 1954. "Focused ion beam assisted deposition of gold". Thesis, Massachusetts Institute of Technology, 1986. http://hdl.handle.net/1721.1/14947.

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Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Nuclear Engineering, 1986.
MICROFICHE COPY AVAILABLE IN ARCHIVES AND SCIENCE.
Bibliography: leaves 75-76.
by Gordon M. Shedd.
M.S.

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Książki na temat "Focused Ion Beam machining"

Foster, C. P. J. A comparison of electro discharge machining, laser & focused ion beam micromachining technologies. Cambridge: TWI, 1998.

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Yao, Nan, red. Focused Ion Beam Systems. Cambridge: Cambridge University Press, 2007. http://dx.doi.org/10.1017/cbo9780511600302.

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Nan, Yao, red. Focused ion beam systems: Basics and applications. Cambridge: Cambridge University Press, 2007.

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Bachmann, Maja D. Manipulating Anisotropic Transport and Superconductivity by Focused Ion Beam Microstructuring. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-51362-7.

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Córdoba Castillo, Rosa. Functional Nanostructures Fabricated by Focused Electron/Ion Beam Induced Deposition. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-02081-5.

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Orloff, Jon. High Resolution Focused Ion Beams: FIB and its Applications: The Physics of Liquid Metal Ion Sources and Ion Optics and Their Application to Focused Ion Beam Technology. Boston, MA: Springer US, 2003.

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1934-, Swanson Lynwood, i Utlaut Mark William 1949-, red. High resolution focused ion beams: FIB and its applications : the physics of liquid metal ion sources and ion optics and their application to focused ion beam technology. New York: Kluwer Academic/Plenum Publishers, 2003.

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Orloff, Jon. High resolution focused ion beams: FIB and its applications ; the physics of liquid metal ion sources and ion optics and their application to focused ion beam technology. New York, NY: Kluwer Academic/Plenum Publishers, 2003.

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Fernandez-Pacheco, Amalio. Studies of Nanoconstrictions, Nanowires and Fe₃O₄ Thin Films: Electrical Conduction and Magnetic Properties. Fabrication by Focused Electron/Ion Beam. Berlin, Heidelberg: Springer-Verlag Berlin Heidelberg, 2011.

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Japan-U.S. Seminar on Focused Ion Beam Technology and Applications (1987 Osaka, Japan and Mie-ken, Japan). Proceedings of the Japan-U.S. Seminar on Focused Ion Beam Technology and Applications: 15-19 November 1987, Senri Hankyu Hotel, Osaka, and 20 November 1987, Shima Kanko Hotel, Mie Prefect, Japan. Redaktorzy Harriott Lloyd R, Nihon Gakujutsu Shinkōkai, National Science Foundation (U.S.) i American Vacuum Society. New York: Published for the American Vacuum Society by the American Institute of Physics, 1988.

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Części książek na temat "Focused Ion Beam machining"

Kamaliya, Bhaveshkumar, i Rakesh G. Mote. "Nanofabrication Using Focused Ion Beam". W Advanced Machining Science, 229–48. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9780429160011-9.

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Bachmann, Maja D. "Focused Ion Beam Micro-machining". W Manipulating Anisotropic Transport and Superconductivity by Focused Ion Beam Microstructuring, 5–33. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-51362-7_2.

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Fu, Yongqi, i Lumin Wang. "Focused Ion Beam Machining and Deposition". W Ion Beams in Nanoscience and Technology, 265–90. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-00623-4_20.

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Campbell, L. C. I., D. T. Foord i C. J. Humphreys. "‘Nano-machining’ using a focused ion beam". W Electron Microscopy and Analysis 1997, 657–60. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9781003063056-170.

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Yang, Hongyi, i Svetan Rachev. "Focused Ion Beam Micro Machining and Micro Assembly". W Precision Assembly Technologies and Systems, 81–86. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-11598-1_9.

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Patil, Deepak. "Focused Ion Beam Machining as a Technology for Long Term Sustainability". W Smart Technologies for Improved Performance of Manufacturing Systems and Services, 181–91. New York: CRC Press, 2023. http://dx.doi.org/10.1201/9781003346623-12.

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Kawasegi, Noritaka. "Ion Beam Machining". W Toxinology, 1–26. Dordrecht: Springer Netherlands, 2018. http://dx.doi.org/10.1007/978-981-10-6588-0_16-1.

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Kawasegi, Noritaka. "Ion Beam Machining". W Toxinology, 1–26. Dordrecht: Springer Netherlands, 2018. http://dx.doi.org/10.1007/978-981-10-6588-0_16-2.

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Fang, Fengzhou, i Zong Wei Xu. "Ion Beam Machining". W CIRP Encyclopedia of Production Engineering, 1–12. Berlin, Heidelberg: Springer Berlin Heidelberg, 2018. http://dx.doi.org/10.1007/978-3-642-35950-7_6485-4.

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Kawasegi, Noritaka. "Ion Beam Machining". W Micro/Nano Technologies, 529–54. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-0098-1_16.

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Streszczenia konferencji na temat "Focused Ion Beam machining"

Tan, Shida, Richard H. Livengood, Yuval Greenzweig, Yariv Drezner, Roy Hallstein i Chris Scheffler. "Characterization of Ion Beam Current Distribution Influences on Nanomachining". W ISTFA 2012. ASM International, 2012. http://dx.doi.org/10.31399/asm.cp.istfa2012p0436.

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Abstract The requirements for focused ion beam (FIB) systems to provide higher image resolution and machining precision continue to increase with the continuation of Moore’s Law. Due to the shrinking geometry and increasing complex structures and materials, it is ever more critical to scale the entire ion probe. The necessity for comprehensive analysis of the ion beam profile and understanding how the ion beam current distribution profile influences different aspects of nanomachining are becoming increasingly important and more challenging.

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Tihanyi, P., D. K. Wagner, H. J. Vollmer, A. J. Roza, C. M. Harding, R. J. Davis i E. D. Wolf. "High Power Laser with a Chemically Assisted Ion Beam Etched Mirror". W Semiconductor Lasers. Washington, D.C.: Optica Publishing Group, 1987. http://dx.doi.org/10.1364/sla.1987.wa5.

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There has been considerable interest in the development of high performance lasers that can be integrated with other opto-electronic components on the same chip. Generally, this involves fabricating one of the laser mirrors by a technique other than by cleaving. Techniques that have been explored are reactive ion etching(1), hybrid wet and reactive ion etching and focused ion beam machining.

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Kim, Sang-Jae, i Koji Iwasaki. "Development of focused-ion-beam (FIB) machining systems for fabricating 3-D micro- and nano- structures". W 2007 Digest of papers Microprocesses and Nanotechnology. IEEE, 2007. http://dx.doi.org/10.1109/imnc.2007.4456202.

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Tan, Shida, Richard H. Livengood, Roy Hallstein, Darryl Shima, Yuval Greenzweig, John Notte i Shawn McVey. "Neon Ion Microscope Nanomachining Considerations". W ISTFA 2011. ASM International, 2011. http://dx.doi.org/10.31399/asm.cp.istfa2011p0040.

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Abstract Nanomachining capability scaling both in the areas of machining precision and novel gas chemistries are required for focused ion beam technology to keep pace with process technology advancement. In this paper, we review the nanomachining potential for the Helium Ion Microscope (HIM) and the Neon Ion Microscope (NIM). The paper also includes an in depth analysis of NIM imaging resolution, subsurface material interaction, and nanomachining performance.

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Zhou, Jack, i Guoliang Yang. "Modeling and Simulation of Focused Ion Beam Based Single Digital Nano Hole Fabrication for DNA and Macromolecule Characterization". W ASME 2008 International Manufacturing Science and Engineering Conference collocated with the 3rd JSME/ASME International Conference on Materials and Processing. ASMEDC, 2008. http://dx.doi.org/10.1115/msec_icmp2008-72033.

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In this paper we describe a top down nano-fabrication method to make single-digit nanoholes that we aim to use for DNA and RNA characterization. There are three major steps towards the fabrication of a single-digit nanohole. 1) Preparing the freestanding thin film by epitaxial deposition and electrochemical etching. 2) Making sub-micro holes (0.2 μm to 0.02μm) by focused ion beam (FIB), electron beam (EB), atomic force microscope (AFM), or other methods. 3) Reducing the hole to less than 10 nm by epitaxial deposition, FIB or EB induced deposition. One specific aim for this paper is to model, simulate and control the focused ion beam machining process to fabricate holes which can reach single-digit nanometer scale on solid-state thin films. Preliminary work has been done on the thin film (30 nm in thickness) preparation, sub-micron hole fabrication, and ion beam induced deposition, and results are presented.

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Nonaka, Shinri, Tastuhiro Mori, Yasuyuki Takata i Masamichi Kohno. "The Effect of the Laser Beam Wavelength and Pulse Width on Micro Grooving: Comparison of Nanosecond and Femtosecond Laser". W ASME 2012 10th International Conference on Nanochannels, Microchannels, and Minichannels collocated with the ASME 2012 Heat Transfer Summer Conference and the ASME 2012 Fluids Engineering Division Summer Meeting. American Society of Mechanical Engineers, 2012. http://dx.doi.org/10.1115/icnmm2012-73135.

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Processing technique of micro grooves and channels is very important to study the phenomenon of fluids in micro scale. Micro grooves and microchannels play an important role in various devices, such as μ-TAS (Micro-Total Analysis Systems) and micro reactors. Laser processing is currently widely used for drilling and grooving of various materials including metals, polymers, glasses and composite materials, since laser machining can avoid the problems that conventional machining methods have. For example wear of a working tool, lowering of processing accuracy, and wear debris becoming contaminants are some of the problems of the conventional method. Additionally, compared to other non-contact machining processes such as electron beam machining (EBM) and focused ion beam (FIB), machining a vacuum is not required. Therefore, applicability is wider and setup costs can be more economical.

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Li, J., J. N. Sun, M. M. Miliar, J. M. Ritchie, X. Luo, R. R. J. Maier, D. P. Hand i W. N. MacPherson. "Focussed ion beam machining of an in-fibre 45° mirror for fibre end sensors". W Fifth European Workshop on Optical Fibre Sensors, redaktor Leszek R. Jaroszewicz. SPIE, 2013. http://dx.doi.org/10.1117/12.2025714.

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Scheffler, Christopher M., Richard H. Livengood, Haripriya E. Prakasam, Michael W. Phaneuf i Ken Lagarec. "Patterning in an Imperfect World—Limitations of Focused Ion Beam Systems and Their Effects on Advanced Applications at the 14 nm Process Node". W ISTFA 2016. ASM International, 2016. http://dx.doi.org/10.31399/asm.cp.istfa2016p0382.

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Abstract This paper provides information on ion beam dose delivery and machining a perfect pattern in an ideal world and summarizes the various beam control limitations of the current generation systems. It discusses conventional and proposed solutions to these limitations and highlights their effect on minimum dimension nanomachining applications at the 14 nm Si process node and beyond. The paper highlights the solutions that can be implemented to help negate inconsequential effects of systems. With that in mind, the most significant of these factors in limiting a tool's ability to complete a perfect pattern can be grouped into two categories: timing and placement and non-uniform dose delivery. With good understanding and discipline, most of these issues described can be corrected, significantly minimized, or simply avoided.

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Jarausch, Konrad, John F. Richards, Lloyd Denney, Alex Guichard i Phillip E. Russell. "Site Specific 2-D Implant Profiling Using FIB Assisted SCM". W ISTFA 2002. ASM International, 2002. http://dx.doi.org/10.31399/asm.cp.istfa2002p0467.

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Abstract Advances in semiconductor technology are driving the need for new metrology and failure analysis techniques. Failures due to missing, or misregistered implants are particularly difficult to resolve. Two-dimensional implant profiling techniques such as scanning capacitance microscopy (SCM) rely on polish preparation, which makes reliably targeting sub 0.25 um structures nearly impossible.[1] Focused ion beam (FIB) machining is routinely used to prepare site-specific cross-sections for electron microscopy inspection; however, FIB induced artifacts such as surface amorphization and Ga ion implantation render the surface incompatible with SCM (and selective etching techniques). This work describes a novel combination of FIB machining and polish preparation that allows for site-specific implant profiling using SCM.

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Lorut, Frédéric, Alexia Valéry, Nicolas Chevalier i Denis Mariolle. "FIB-Based Sample Preparation for Localized SCM and SSRM". W ISTFA 2018. ASM International, 2018. http://dx.doi.org/10.31399/asm.cp.istfa2018p0209.

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Abstract Dopants imaging using scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy are used for identifying doped areas within a device, the latter being analyzed either in a top view or in a side view. This paper presents a sample preparation workflow based on focused ion beam (FIB) use. A discussion is then conducted to assess advantages of the method and factors to monitor vigilantly. Dealing with FIB machining, any sample preparation geometry can be achieved, as it is for transmission electron microscopy (TEM) sample preparation: cross-section, planar, or inverted TEM preparation. This may pave the way to novel SCM imaging opportunities. As FIB milling generates a parasitic gallium implanted layer, a mechanical polishing step is needed to clean the specimen prior to SCM imaging. Efforts can be conducted to reduce the thickness of this layer, by reducing the acceleration voltage of the incident gallium ions, to ease sample cleaning.

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Raporty organizacyjne na temat "Focused Ion Beam machining"

Melngailis, John. Focused Ion Beam Implantation. Fort Belvoir, VA: Defense Technical Information Center, marzec 1992. http://dx.doi.org/10.21236/ada249662.

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Jiang, X., Q. Ji, A. Chang i K. N. Leung. Mini RF-driven ion source for focused ion beam system. Office of Scientific and Technical Information (OSTI), sierpień 2002. http://dx.doi.org/10.2172/802041.

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Pellerin, J. G., D. Griffis i P. E. Russell. Development of a focused ion beam micromachining system. Office of Scientific and Technical Information (OSTI), grudzień 1988. http://dx.doi.org/10.2172/476649.

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Tegtmeier, Eric, Mary Hill, Daniel Rios i Juan Duque. Focused Ion Beam analysis of non radioactive samples. Office of Scientific and Technical Information (OSTI), luty 2021. http://dx.doi.org/10.2172/1766960.

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Harmer, M. P. A Focused-Ion Beam (FIB) Nano-Fabrication and Characterization Facility. Fort Belvoir, VA: Defense Technical Information Center, listopad 2002. http://dx.doi.org/10.21236/ada408750.

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Mayer, Thomas Michael, David Price Adams, V. Carter Hodges i Michael J. Vasile. Focused ion beam techniques for fabricating geometrically-complex components and devices. Office of Scientific and Technical Information (OSTI), marzec 2004. http://dx.doi.org/10.2172/918768.

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Lamartine, B. C. Liquid metal focused ion beam etch sensitization and related data transmission processes. Office of Scientific and Technical Information (OSTI), grudzień 1998. http://dx.doi.org/10.2172/562504.

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Dolph, Melissa C., i Christopher Santeufemio. Exploring Cryogenic Focused Ion Beam Milling as a Group III-V Device Fabrication Tool. Fort Belvoir, VA: Defense Technical Information Center, wrzesień 2013. http://dx.doi.org/10.21236/ada597233.

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Miller, J. D., R. F. Schneider, D. J. Weidman, H. S. Uhm i K. T. Nguyen. Plasma Wakefield Effects On High-Current Relativistic Electron Beam Transport In The Ion-Focused Regime. Fort Belvoir, VA: Defense Technical Information Center, styczeń 1992. http://dx.doi.org/10.21236/ada338876.

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