Rozprawy doktorskie na temat „Flexible firm”

Within Australia and in Europe. there is evidence of growth in the incidence of non¬standard forms of employment such as part-time and casual work. Part of this growth can be attributed to changes in the structure of the economy and the increasing importance of service industries where non-standard forms of employment proliferate. There is also evidence, however, that employers at the firm level are progressively expanding their use of non-standard employment and reducing their reliance on full-time labour. One explanation for this organisational-level phenomena has been suggested by Atkinson (1987) in his account of the ‘flexible firm’. Atkinson claims that employers are increasingly attempting to divide the workforce into two major segments: a skilled, full-time core labour force and an unskilled, non-standard segment. This thesis examines Atkinson’s ‘flexible firm’ model through a study of labour-use practices of three acute hospitals in Queensland. A main finding of this thesis is the generalised and substantial growth of non-standard employment in all types of Queensland hospitals. The growth of non-standard hospital labour is not as, Atkinson would suggest, largely the result of demand-side strategies of employers but is also conditioned by supply-side factors. Gender, rather than skill, is found to be an important determinant of the proliferation of non-standard employment. Non-standard employment is not the major labour adjustment mechanism in all sectors of the hospital industry. Labour intensification is a critical and overlooked form of labour adjustment in the public sector. Overall, this thesis concludes that employers’ labour-use practices need to be conceptualised within the context of the opportunities and constraints imposed by the interaction of demand and supply-side factors.

Within Australia and in Europe. there is evidence of growth in the incidence of non¬standard forms of employment such as part-time and casual work. Part of this growth can be attributed to changes in the structure of the economy and the increasing importance of service industries where non-standard forms of employment proliferate. There is also evidence, however, that employers at the firm level are progressively expanding their use of non-standard employment and reducing their reliance on full-time labour. One explanation for this organisational-level phenomena has been suggested by Atkinson (1987) in his account of the ‘flexible firm’. Atkinson claims that employers are increasingly attempting to divide the workforce into two major segments: a skilled, full-time core labour force and an unskilled, non-standard segment. This thesis examines Atkinson’s ‘flexible firm’ model through a study of labour-use practices of three acute hospitals in Queensland. A main finding of this thesis is the generalised and substantial growth of non-standard employment in all types of Queensland hospitals. The growth of non-standard hospital labour is not as, Atkinson would suggest, largely the result of demand-side strategies of employers but is also conditioned by supply-side factors. Gender, rather than skill, is found to be an important determinant of the proliferation of non-standard employment. Non-standard employment is not the major labour adjustment mechanism in all sectors of the hospital industry. Labour intensification is a critical and overlooked form of labour adjustment in the public sector. Overall, this thesis concludes that employers’ labour-use practices need to be conceptualised within the context of the opportunities and constraints imposed by the interaction of demand and supply-side factors.
Thesis (PhD Doctorate)
Doctor of Philosophy (PhD)
Griffith Business School
Griffith Business School
Full Text

The focus of this research was promotion and succession management in Australian law firms. Two staff retention issues currently faced by the Australian legal industry were identified as suggesting possible failures in this area: 1) Practitioners are leaving law firms early in their careers, 2) Female representation is disproportionally low at partnership level. The research described current Australian law firm promotion and succession practices and then explained their possible relevance to the two retention issues. The overall aim of the research was to uncover key findings and present practical recommendations to law firm managers and partners ready for incorporation into their future promotion and succession planning practice. In so doing the research aimed to benefit the Australian legal community as a whole. Four areas of literature relevant to the topic were reviewed, 1) law firm governance concluding that the fundamental values of the P²-Form remained constant (Cooper, Hinings, Greenwood & Brown, 1996; Morris & Pinnington, 1998) with ownership and strategic control of law firms remaining in the hands of partners; 2) the importance of individual practitioners to law firms concluding that the actual and opportunity costs relating to practitioner turnover were significant due to the transient nature of knowledge as a key asset of law firms (Gottschalk & Khandelwal, 2004; Rebitzer & Taylor, 2007); 3) generational differences concluding with support for the work of Finegold, Mohrman and Spreitzer (2002), Davis, Pawlowski and Houston (2006), Kuhnreuther (2003), and Avery, McKay, and Wilson (2007) which indicated that generational cohort differences were of little utility in human resources management practice; and 4) previous research relating to law firm promotion and succession practices indicating that five practices were relevant in law firm promotion outcomes; 1) firm billing requirements (Gorman & Kmec, 2009; Phillips, 2001; Noonan & Corcoran, 2004; Webley & Duff, 2007); 2) mentoring programs (Phillips, 2001; Noonan & Corcoran, 2004); 3) the existence of female partners (Gorman & Kmec, 2009; Beckman & Phillips, 2005); 4) non-partner career paths (Phillips, 2001; Corcoran & Noonan, 2004); and 5) the existence of family friendly policies (Gorman & Kmec, 2009; Phillips, 2001; Noonan & Corcoran, 2004; Webley & Duff, 2007.) The research was carried out via a sequential mixed method approach. The initial quantitative study was based upon a theoretical framework grounded in the literature and provided baseline information describing Australian law firm promotion and succession practices. The study was carried out via an on-line survey of Australian law firm practitioners. The results of the study provided the basis for the second qualitative study. The qualitative study further explained the statistically generated results and focused specifically on the two identified retention issues. The study was conducted via one-on-one interviews with Australian law firm partners and experienced law firm managers. The results of both studies were combined within the context of relevant literature resulting in eight key findings: Key findings 1) Organisational commitment levels across generational cohorts are more homogenous than different. 2) Law firm practitioners are leaving law firms early in their careers due to the heavy time commitment behaviour demanded of them, particularly by clients. 3) Law firm promotion and succession practices reinforce practitioner time commitment behaviour marking it as an indicator of practitioner success. 4) Law firm practitioners believe that they have many career options outside law firms and are considering these options. 5) Female practitioners are considering opting out of law firms due to time commitment demands related to partnership conflicting with family commitment demands. 6) A masculine, high time commitment culture in law firms is related to the decision by female practitioners to leave law firms. 7) The uptake of alternative work arrangements by female practitioners is not fatal to their partnership prospects particularly in firms with supportive policies, processes and organisational culture. 8) Female practitioners are less inclined than their male counterparts to seek partnership as an ultimate goal and are more likely to opt out of law firms exhibiting highly competitive, masculine cultures. Practical recommendations Further review of the data collected in relation to the key findings provided the basis for nine practical recommendations specifically geared towards implementation by law firm managers and partners. The first recommendation relates to the use of generational differences in practitioner management. The next six relate to recommended actions to reduce the time commitment demands on practitioners. The final two recommendations relate to the practical implementation of these actions both at an individual and organisational level. The recommendations are as follows: 1) "Generationally driven," age based generalisations should not be utilised in law firm promotion and succession management practice. 2) Expected levels of client access to practitioners be negotiated on a client by client basis and be included in client retention agreements. 3) Appropriate alternative working arrangements such as working off-site, flexible working hours or part-time work be offered to practitioners in situations where doing so will not compromise client serviceability. 4) The copying of long working hour behaviours of senior practitioners should be discouraged particularly where information technology can facilitate remote client serviceability. 5) Refocus the use of timesheets from an employer monitoring tool to an employee empowerment tool. 6) Policies and processes relating to the offer of alternative working arrangements be supported and reinforced by law firm organisational culture. 7) Requests for alternative working arrangements be determined without regard to gender. 8) Incentives and employment conditions offered to practitioners to be individualised based on the subjective need of the individual and negotiated as a part of the current employee performance review process. 9) Individually negotiated employment conditions be negotiated within the context of the firm’s overall strategic planning process. Through the conduct of the descripto-explanatory study, a detailed discussion of current law firm promotion and succession practices was enabled. From this discussion, 7 eight key findings and nine associated recommendations were generated as well as an insight into the future of the profession being given. The key findings and recommendations provide practical advice to law firm managers and partners in relation to their everyday promotion and succession practice. The need to negotiate individual employee workplace conditions and their integration into overall law firm business planning was put forward. By doing so, it was suggested that both the individual employee and the employing law firm would mutually benefit from the arrangement. The study therefore broadened its practical contribution from human resources management to a contribution to the overall management practice of Australian law firms. In so doing, the research has provided an encompassing contribution to the Australian legal industry both in terms of employee welfare as well as firm and industry level success.

Les films minces déposés sur des substrats flexibles ont été intensivement étudiés ces dernières années en raison de leur nombreuses applications en électronique flexible. Depuis peu, l'électronique flexible est étendu aux matériaux magnétiques conduisant ainsi au domaine émergeant de la magnéto-électronique flexible actuellement à l'avant garde des sujets de recherche de la spintronique. Ce travail de thèse est dédié à l'étude des propriétés magnéto-mécaniques de films minces magnétiques (Ni, NiFe, Co2FeAl, CoFeB, FeCuNbSi) sur des substrats flexibles. Les analyses structurales ont montré que les films de Ni et de CFA sont polycristallins non-texturés ; le CFB est amorphe. Par conséquent, les propriétés élastiques et magnéto-élastiques de ces films sont considérées comme étant isotropes. Une technique basée sur une utilisation conjointe d'essai mécanique, la résonance ferromagnétique (FMR) et la corrélation d'images numériques (CIN) a été développée pour étudier les propriétés magnéto-mécaniques de films minces sur substrats flexibles. A l'aide de cette méthode, il est possible de suivre l'évolution de l'anisotropie résiduelle omniprésente dans les films magnétiques sur substrats flexibles. Cette anisotropie est liée aux propriétés mécaniques contrastées lorsqu'on dépose un film mince rigide (grand module d'Young) sur un substrat flexible (petit module d'Young). L'effet du recuit sur les propriétés élastiques et magnéto-élastiques a été soigneusement étudié dans le film CFB validant ainsi l'intérêt porté à ses alliages pour des applications en spintronique. Enfin, la résonance ferromagnétique est employé en balayage en fréquence pour suivre la variation de la direction de l'aimantation en fonction des déformations induites par l'application de tension électrique sur l'actionneur piézoélectrique. Un retournement de 90° de la direction de l'aimantation dans le film Co2FeAl sur substrat flexible de Kapton® est observé
Thin films deposited on flexible substrates have been widely studied in the last decades due to the numerous applications in flexible electronics. Recently, flexible electronics have been extended to magnetic materials leading to the so-called emerging feld of flexible magnetoelectronics which is actually at the cutting-edge of spintronics research topics.This thesis is devoted to the study magnetomechanical properties of magnetic thin films (Ni, NiFe, Co2FeAl, CoFeB, FeCuNbSi) on flexible substrates. Structural analysis have 130 Abstracts hown that the Ni and CFA films are found to be polycrystalline with no strong preferred orientations ; the CFB film is amorphous. Consequently, the elastic and magnetoelastic properties are isotropic. For the study of the magnetomechanical properties, a set-up based on a jointly use of deformation test (bending or piezoactuation), ferromagnetic resonance (FMR) and digital image correlation (DIC) have been developped. Thanks to this method, it is possible to follow the evolution of the inescapable residual anisotropy encountered in magnetic thin films on flexible substrates under deformation and to determine the effective coefficient of magnetostriction of the films (sometimes unknown).This residual anisotropy is ascribed to contrasted mechanical strength when a sti thin film is deposited on a compliant substrate. The effect of the annealing temperature on the elastic and magnetoelastic have been studied carefully in CFB validating then theinterest on such alloys for spintronics applications. Finally, we have employed FMR inits sweep frequency mode to study the effective evolution of magnetization direction as function of the voltage-induced strains. A 90-degree magnetization rotation in Co2FeAl thin film on Kapton® polyimide substrate is observed

Gli ossidi amorfi semiconduttori (AOS) sono nuovi candidati per l’elettronica flessibile e su grandi aree: grazie ai loro legami prevalentemente ionici hanno una mobilità relativamente alta (µ > 10cm^2/Vs) anche nella fase amorfa. Transistor a film sottile (TFT) basati sugli AOS saranno quindi più performanti di tecnologie a base di a-Si e più economici di quelle a base di silicio policristallino. Essendo amorfi, possono essere depositati a basse temperature e su substrati polimerici, caratteristica chiave per l’elettronica flessibile e su grandi aree. Per questa tesi, diversi TFT sono stati fabbricati e caratterizzati nei laboratori del CENIMAT all’Università Nova di Lisbona sotto la supervisione del Prof. P. Barquinha. Questi dispositivi sono composti di contatti in molibdeno, un canale semiconduttivo di ossido di zinco, gallio e indio (IGZO) e un dielettrico composto da 7 strati alternati di SiO2 e SiO2+Ta2O5. Tutti i dispositivi sono stati depositati mediante sputtering su sostrati flessibili (fogli di PEN). Le misure tensione-corrente mostrano che i dispositivi mantengono alte mobilità (decine di 10cm^2/Vs) anche quando fabbricati a temperature inferiori a 200°C. Si è analizzato il funzionamento dei dispositivi come fototransistor rilevando la risposta alla luce ultravioletta e in particolare la loro responsività e spostamento della tensione di soglia in funzione della lunghezza d’onda incidente. Questi risultati consentono di formulare ipotesi sul comportamento dei dispositivi alla scala microscopica. In particolare, indicano che i) la mobilità del canale non è influenzata dall’illuminazione, ii) sia l'IGZO sia il Ta2O5 contribuiscono al processo di fotoconduttività e iii) il processo di fotogenerazione non è adiabatico. La tesi contiene inoltre una descrizione del processo di ricombinazione e presenta un’applicazione pratica di tali dispositivi in un circuito per RFID. Infine, esplora la possibilità di migliorarne la flessibilità e le prestazioni.

This thesis examines the extent to which the Flexible Specialisation model of Industrial organisation constitutes a v Iab Ie and app IIcab Ie strategy for sma II sea Ie manufactur Ing firms In Greece. This Involves: 1. The evaluation of the Flexible Specialisation paradigm as a response and as a way out of the crisis. 2. The analysis of the development trajectory of small scale Industry In Greece. 3. The Identification of the current characteristics of sma II manufacturing firms In Greece, their strengths and their weaknesses. 4. The evaluation of the future prospects of smal I scale Industry In the light of the Flexible Specialisation strategy. The first part of the thesis (chapters 1, 2 and 3) deals wit h the Que st Ion 0f res truc turi ngin v Iew 0f the cri sis and exam Ines a Iternat Ive ways of organ Ising product Ion. It looks more closely to the Flexible Specialisation In the light of academic experimentation with new concepts, ranging from post- Fordlsm to Flexible Accumulation. It evaluates the strengths and the weaknesses of the Flexible Specialisation model, and considers Its merits against previous sma II scale Industry theorisations. The second part of the thesis (chapters 4,5 and 6) exam Ines the po IIt Ica I economy of Industry In Greece In order to unravel the economic, soclo-polltlcal and Institutional factors account Ing for the emergence, conso IIdat Ion and perSistence of small firms as a considerable part of the Greek manufacturing structure. The third part of the thesis (chapters 7, 8 and 9) Is based on evidence from fieldwork material on three manufacturing branches (metalworking-engineering, clothing and plastic products) and brings out similarities and differences of alternative responses to the economic recession. It examines the extent to which flexible specialisation principles have been Introduced by some sma II firms In the sectors under consideration. Finally, the fourth part (chapters 10 and 11) brings together the main themes developed In the course of the thesis In order to explore the scope and deslrabl Ilty of pol Icy InterventIon In the dIrectIon of Inducing a flexIble specialIsatIon restructuring pattern. The major conclusions of the thesIs are summarIsed In the fInal chapter.

Worldwide interest in how to prevent the progressive collapse for tall and large buildings under exceptional loading conditions was heightened by the collapse of the twin towers at the World Trade. The performance of steel-framed structures subjected to fire loading is heavily reliant on the interaction between structural members such as columns, slabs and beams. The implicit assumption in fire engineering design is that bolted connections are able to maintain the structural integrity for a large and tall building under fire conditions. Unfortunately, evidence from the collapse of the World Trade Centre towers and full scale fire tests at the BRE Cardington Laboratory indicates that connections may be particularly vulnerable during both heating and cooling. Hence, this PhD research is focused on structural performance of simple steel connections under fire conditions, particularly the interaction mechanism between non-ductile and ductile components in a connection and connection failure mechanism in a steel-framed structure subjected to fire loading. The research involved experimental testing of simple steel connections and components (structural 8.8 bolts) at elevated temperatures. High temperature tests on structural bolts demonstrated two modes of failure at elevated temperatures: bolt breakage and thread stripping. In order to prevent the thread stripping in a connection, the manufacturing process of bolts and nuts has been investigated and the 'overtapping' of nut threads to accommodate the (zinc) coating layer for corrosion resistance has been indentified as a primary reason resulting in this premature failure between bolts and nuts. Experimental tests on endplate connections revealed the ductility of these connections to decrease at high temperatures, which might hinder the development of catenary actions in fire if plastic hinges are attempted to be formed within the connection zones. Component-based modelling and finite element simulation have been utilized for investigation of the performance of these connections. An improved component-based model has been developed which includes nonductile (brittle) components (bolts and welds) into a connection model with a reasonable assumption of their failure displacements, based on experimental tests. This model also features vertical components for consideration of shear response of these connections in fire. The component-based connection model has been used in a sub-frame structure and a parametric study demonstrates that a connection may fail due to a lack of rotational capacity (failure of bolts or welds) in a structure exposed to a fire. Therefore, partial depth endplate connections are recommended to be fireprotected to prevent the failure of these brittle components. Alternatively, ensuring the strength of brittle components (bolts and welds) is higher than that of other components in each bolt row is necessary to achieve the ductile failure mechanism of simple connections. Based on the experimental tests, component-based connection modelling and finite element simulation, recommendations to improve the robustness of simple steel connections in fire have been presented.

Cadmium Telluride (CdTe) is a leading thin film photovoltaic (PV) material due to its near ideal bandgap of 1.45 eV and its high optical absorption coefficient. The typical CdTe thin film solar cell is of the superstrate configuration where a window layer (CdS), the absorber (CdTe) and a back contact are deposited onto glass coated with a transparent electrode. Substrate CdTe solar cells where the above listed films are deposited in reverse are not common. In this study substrate CdTe solar cells are fabricated on flexible foils. The properties of the Molybdenum back contact, Zinc Telluride (ZnTe) interlayer and CdTe absorber on the flexible foils were studied and characterized using X-Ray Diffraction (XRD), and Scanning Electron Microscopy (SEM). Substrate curvature and film flaking was observed during the fabrication as a result of differences in thermal expansion coefficients between the substrate and the deposited films, and also due to impurity diffusion from the foil into the film stack. In order to overcome this problem diffusion barriers where used to eliminate contamination. Silicon dioxide (SiO2), silicon nitride (Si3N4) and molybdenum nitride (MoxNy) were used as such barriers. Electrical characterization of completed devices was carried out by Current-Voltage (J-V), Capacitance-Voltage (C-V) and Spectral Response (SR) measurements. Roll-over was observed in the first quadrant of J-V curves indicating the existence of a back barrier due to a Schottky back contact. The formation of non-rectifying contact to p-CdTe thin-film is one of the major and critical challenges associated with the fabrication of efficient and stable solar cells. Several materials (ZnTe, Cu, Cu2Te, and Te) were studied as potential candidates for the formation of an effective back contact.

Le travail de cette thèse porte sur le développement de transistors en couche mince (Thin Film Transistors, TFTs) à base de silicium microcristallin fabriqués sur un substrat flexible à très basse température (T< 180 °C). La première partie de ce travail a consisté à étudier la stabilité électrique de ces TFTs. L'étude de la stabilité électrique des TFTs de type N fabriqués sur verre a montré que ces TFTs sont assez stables, la tension de seuil VTH ne se décale que de 1.2 V au bout de 4 heures de stress sous une tension de grille VGSstress= +50V et à une température T=50 °C. L'instabilité électrique de ces TFTs est principalement causée par le piégeage des porteurs dans l'isolant de grille. La deuxième étape de ce travail s'est concentrée sur l'étude du comportement de ces TFTs sous déformation mécanique. Ces TFTs sont soumis à un stress mécanique en tension et en compression. Le rayon de courbure minimum que les TFTs pouvaient supporter est r=1.5 mm en tension et en compression. La limitation de la déformation mécanique de ces TFTs est principalement due à la contrainte mécanique du nitrure de silicium utilisé comme isolant de grille des TFTs. Autrement dit, ces TFTs sont mécaniquement fiables et présentes une faible variation du courant ION, de l'ordre de 1%, même après 200 cycles de déformation mécanique. Ces résultats obtenus laissent entrevoir la possibilité de concevoir une électronique flexible pouvant être pliée en 2. Enfin, les TFTs sont fabriqués avec différents isolants de grille afin d'augmenter la mobilité d'effet de champ. Malheureusement, aucun isolant de grille utilisé dans ces études n'a permis d'augmenter la mobilité d'effet de champ sans dégrader la stabilité électrique des TFTs. Des études plus détaillées et des optimisations complémentaires sur ces isolants de grille sont nécessaires
This work deals with the development of microcrystalline silicon thin film transistors (TFTs) fabricated on flexible substrate at low temperature (T=180 °C). The first step of this work consists in studying the electrical stability of TFTs. The N-type TFTs fabricated on glass substrate are electrically stable under gate bias stress VGStress= +50V at T=50 °C. The threshold voltage shift (ΔVTH) was only 1.2 V during 4 hours. This electrical instability of TFTs is mainly due to carrier trapping inside the silicon nitride gate insulator. The second step of this work lies in the study of the mechanical behavior of the TFTs. Both tensile and compressive strains were applied on TFTs. The minimum curvature radius is r=1.5 mm for both tension and compression. The main limitation of TFTs comes from the mechanical strain εlimit of silicon nitride used as gate insulator of TFTs. Also, these TFTs are mechanically reliable: the variation of ION current was only 1% after 200 cycles mechanical bending. These results obtained open the way to the development of flexible electronics that can be folded in half.Finally, TFTs have been fabricated using different gate insulators in order to improve the mobility. Unfortunately, all the gate insulators used couldn’t improve mobility without sacrificing electrical stability of TFT. More detailed studies and complementary optimization of these gate insulators are necessary

Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2018.
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged student-submitted from PDF version of thesis.
Includes bibliographical references (pages 257-270).
6,13-Bis(triisopropylsilylethynyl)pentacene and pentacene high-voltage organic thin film transistors (HVOTFTs) were fabricated on solid and flexible substrates via a low temperature (< 120 °C) solution-processed and vacuum-deposited fabrication methods, achieving breakdown voltages and on/off current ratios beyond -550 V and 10⁶ A/A, respectively, a first of its kind. The HVOTFT design was based on a dual channel architecture, where a gated region enabled FET capabilities and an offset region accommodated the high-voltage. An HVOTFT capable of driving high-voltages ([V[lower case DS]] > 100 V) while being controlled by a relatively low gate-to-source voltage ([V[lower case GS]] < 50 V) will enable new applications on arbitrary and flexible substrates, such as large electrostatic MEMS actuators, electroactive polymers, novel displays, field-emitter arrays for digital x-ray imaging as well as photovoltaic systems on glass. A high-k dielectric Bi₁.₅Zn₁Nb₁.₅O₇ and a low-k organic dielectric parylene-C were incorporated into the HVOTFT process to improve threshold voltage and mobility. Field plate designs and self-assembled monolayers were also explored to enhance the HVOTFT's electrical characteristics by directly controlling the charge carrier distribution within the channel or by improving the charge carrier injection into the organic semiconductor. Moreover, a self-shearing drop cast deposition method has been employed for the HVOTFT for the first time, growing large and highly oriented organic semiconductor grains. Solution-processing will enable room-temperature, air ambient and large-area depositions techniques, reducing fabrication overhead. Furthermore, a self-aligned solution-processing method based on surface energy engineering was developed with self-assembled monolayers to create pre-patterned organic semiconductor channels without the need for etching.
by Andy Shih.
Ph. D.

2D molybdenum disulfide (MoS₂) gives a new inspiration for the field of nanoelectronics, photovoltaics, and sensorics. However, the most common processing technology, e.g., liquid‐phase based scalable exfoliation used for device fabrication, leads to the number of shortcomings that impede their large area production and integration. Major challenges are associated with the small size and low concentration of MoS₂ flakes, as well as insufficient control over their physical properties, e.g., internal heterogeneity of the metallic and semiconducting phases. Here it is demonstrated that large semiconducting MoS₂ sheets (with dimensions up to 50 µm) can be obtained by a facile cathodic exfoliation approach in nonaqueous electrolyte. The synthetic process avoids surface oxidation thus preserving the MoS₂ sheets with intact crystalline structure. It is further demonstrated at the proof‐of‐concept level, a solution‐processed large area (60 × 60 µm) flexible Ebola biosensor, based on a MoS₂ thin film (6 µm thickness) fabricated via restacking of the multiple flakes on the polyimide substrate. The experimental results reveal a low detection limit (in femtomolar–picomolar range) of the fabricated sensor devices. The presented exfoliation method opens up new opportunities for fabrication of large arrays of multifunctional biomedical devices based on novel 2D materials.

This thesis describes the electrical behaviour of solution-processed zinc oxide thin film transistors (ZnO TFTs) fabricated at low temperature. First, the electrical properties of solution-processed ZnO films are reported. Spin-coated ZnO films annealed at 150 °C exhibit significant sensitivity to the ambient environment. However, their stability can be improved by hydrogen plasma treatment. Zinc oxide TFTs (channel width/length = 4000/200 μm) fabricated by chemical spray pyrolysis at the low process temperature of 140 °C are investigated. The resulting transistors exhibit a saturation mobility of 2 cm2/Vs measured in air; this value is reduced to 0.5 cm2/Vs under vacuum. The effect of hydrogen plasma treatment on spin-coated ZnO TFTs is then studied. The electrical characteristics of untreated TFTs exhibit large hysteresis and a positive threshold voltage shift on repeated measurements. These effects are reduced by the hydrogen plasma and an increase in carrier mobility is observed. In a further investigation, a solution-processed silicon dioxide gate insulator for application in the TFTs is used; a perhydropolysilazane (PHPS) precursor is spin-coated with subsequent thermal treatment to form the SiO2 layer. Exposure to oxygen plasma leads to an acceleration of the conversion reaction, resulting in good insulating properties (leakage current density of ~10-7 A/cm2) and TFT performance (channel width/length = 1000/50 μm, carrier mobility of 3.2 cm2/Vs, an on/off ratio of ~107, a threshold voltage of -1.3 V and a subthreshold swing of 0.2 V/decade). Finally, a photolithographic process is introduced for the fabrication of ‘short’ channel solution-processed ZnO TFTs. Optimum processing conditions are established and used for the fabrication of transistors having various channel dimensions. Devices with a minimum channel length of 5 μm possessed a mobility of 1.5 x 10-2 cm2/Vs, on/off ratio of 106 and good contact between the S/D electrodes and the semiconductor. The relatively low mobility could originate from gate insulator roughness caused by the photolithographic processes.

The aim of this thesis is to implement flexible interpolators and decimators onField Programmable Gate Array (FPGA). Interpolators and decimators of differentwordlengths (WL) are implemented in VHDL. The Farrow structure is usedfor the realization of the polyphase components of the interpolation/decimationfilters. A fixed set of subfilters and adjustable fractional-delay multiplier valuesof the Farrow structure give different linear-phase finite-length impulse response(FIR) lowpass filters. An FIR filter is designed in such a way that it can be implementedfor different wordlengths (8-bit, 12-bit, 16-bit). Fixed-point representationis used for representing the fractional-delay multiplier values in the Farrow structure. To perform the fixed-point operations in VHDL, a package called fixed pointpackage [1] is used. A 8-bit, 12-bit, and 16-bit interpolator are implemented and their performancesare verified. The designs are compiled in Quartus-II CAD tool for timing analysisand for logical registers usage. The designs are synthesised by selecting Cyclone IVGX family and EP4X30CF23C6 device. The wordlength issues while implementingthe interpolators and decimators are discussed. Truncation of bits is required inorder to reduce the output wordlength of the interpolator and decimator.

I transistor a film sottile basati su ossidi amorfi semiconduttori sono ottimi candidati nell'ambito dell'elettronica su larga scala. Al contrario delle tecnologie basate su a-Si:H a poly-Si, gli AOS presentano un'elevata mobilità elettrica (m > 10 cm^2/ Vs) nonostante la struttura amorfa. Inoltre, la possibilità di depositare AOS a basse temperature e su substrati polimerici, permette il loro impiego nel campo dell'elettronica flessibile. Al fine di migliorare questa tecnologia, numerosi TFT basati su AOS sono stati fabbricati durante 4 mesi di attività all'Università Nova di Lisbona. Tutti i transistor presentano un canale formato da a-GIZO, mentre il dielettrico è stato realizzato con due materiali differenti: Parylene (organico) e 7 strati alternati di SiO2 e SiO2 + Ta2O5. I dispositivi sono stati realizzati su substrati flessibili sviluppando una nuova tecnica per la laminazione e la delaminazione di fogli di PEN su supporto rigido. L'ottimizzazione del processo di fabbricazione ha permesso la realizzazione di dispositivi che presentano caratteristiche paragonabili a quelle previste per TFT costruiti su substrati rigidi (m = 35.7 cm^2/Vs; VON = -0.10 V; S = 0.084 V/dec). Al Dipartimento di Fisica dell'UNIBO, l'utilizzo del KPFM ha permesso lo studio a livello microscopico delle prestazioni presentate dai dispositivi analizzati. Grazie a questa tecnica di indagine, è stato possibile analizzare l'impatto delle resistenze di contatto sui dispositivi meno performanti e identificare l'esistenza di cariche intrappolate nei TFT basati su Parylene. Gli ottimi risultati ottenuti dall'analisi KPFM suggeriscono un futuro impiego di questa tecnica per lo studio del legame tra stress meccanico e degradazione elettrica dei dispositivi. Infatti, la comprensione dei fenomeni microscopici dovuti alla deformazione strutturale sarà un passaggio indispensabile per lo sviluppo dell'elettronica flessibile.

It is the focus of this project to explore the possibility of achieving Radio Fre¬quency (RF) micro-devices on flexible polymer substrates. To this end standard MEMS fabrication methods have been tailored to allow the integration of func¬tional materials and device patterning for production of RF MEMS devices with flexible organic substrates. Material quality, device yield, performance and re-liability are critical aspects of our study. The project encompasses the use of a direct integration method for the creation of Film Bulk Acoustic Resonators (FBARs) on Liquid Crystal Polymer (LCP) substrates. An FBAR is a passive component used for resonance and filtering purposes. Its production on organic substrates would lead to a number of ad-vantages including: overall cost savings, size reduction and ability of the device to be directly integrated on the printed circuit board (PCB) front-end with the other essential components (i.e. antenna) without the use of wiring and inter-connections. New fabrication process flows have been developed to allow the creation of FBAR microwave devices on LCP. First of all pre-processing of the polymer substrate is carried out to make it rigid and smooth. Substrate smoothness and stiffness are necessary in order to obtain functioning devices and for the substrate to comply to the standard fabrication methods. Rigidity is achieved through a backing method whereby silicon or glass are attached to LCP with an intermediate adhesive layer. The best way to achieve smoothness was found to be Chemical Mechanical Polishing (CMP). Standard fabrication techniques were then employed to deposit the metal and piezoelectric material and pattern them. Both bulk and surface micromachining were used and, in some cases, tailored to suit the new substrates (LCP) tolerance limits (such as temperature and flexibility). Zinc Oxide (ZnO) piezoelectric is the preferred functional material and it is chosen due to its relatively low deposition temperature re¬quirements (below 300C) and its high frequency characteristics. The creation of a front-to-back processed FBAR on LCP is successfully carried out at relatively low temperatures since the Zinc oxide (ZnO) functional mate¬rial is proven to yield good crystallinity at a deposition temperature of 100C and also because micromachining temperatures do not generally exceed 115C. The final device is characterized through RF measurements, compared with sim¬ulations and standard FBARs and the polymer/ceramic integration reliability for device creation is briefly addressed. In conclusion FBARs are successfully created on LCP with only minor compli¬cations related to LCP surface roughness and RIE etch of the polymer. The project lays promising prospects for RF MEMS devices on compliant organic substrates.

碩士
國立臺灣科技大學
企業管理系
92
This research investigated the longitudinal effects of working-time reduction on firms and firm’s corresponding strategies. ‘Employing flexible’ firm and ‘externalization’ perspectives, the study explored the relationship between positive or negative effects of working-time reduction and bundle corresponding strategies, and to examine the ‘substitute’ or ‘ supplementary’ effects among bundle strategies. Surveying 2,094 firms, the research findings are as follows: (1) The greatest negative effect of working-time reduction is increase of operation cost. On the other hand, working-time reduction can increase the job satisfaction. (2) Firms employed functional flexibility strategy the most, and wage flexibility strategy the least. (3) After about two year’s working time reduction, the effects of labor shortage and making employees work more efficiently increased and the effect of delaying the working schedule decreased. The corresponding strategies of distribution of working-time, speeding up the upgrading of industrial structure and improving the R&D ability, reducing the range of adjusting pay, changing the management or operating procedures, and closing the less-efficiency production line or plant became more utilized by firms. On the contrary, the strategy of changing employees’ monthly pay to piece-rate system became less used. (4) The positive effect of working-time reduction was less related to the functional flexibility strategy. Besides, firms used numerical and external flexibility strategies to encounter the negative effect of raising operation cost. And firms used wage flexibility strategy to encounter the negative effect of training and appraising difficultly. (5) Internal flexibility strategy was positive related to external flexibility strategy. Among three internal flexibility strategies, functional flexibility strategy was most related to external flexibility strategy, and wage flexibility strategy was least related to external flexibility strategy. (6) For the substitute or supplementary effects among bundle strategies, wage and functional flexibility strategies had complementary effect. Functional, numerical, and wage flexibility strategies also had complementary effect. Functional, wage, and external flexibility strategies were also complementary. On the contrary, numerical and external flexibility strategies had no complementary effect.

碩士
國立高雄第一科技大學
運籌管理所
95
Abstract Under the growing competition of globalization and rapid shifting of the global environment, businesses and organizations should adequately make use of the resource flexibility to enhance the organizations’ mobility, responsiveness and adaptability. However, the most essential resource of a business is “human resource”, thus, this study tend to analyze the flexible firm model from a broader viewpoint of logistics management. This study examines how organizations and businesses make use of various human labor combinations to realize the purpose of human resource flexibility, in hope to help businesses to create edges and sustainable competitiveness while facing external challenges. This is a case study on CTCI Corporation, a leading enterprise in the turn-key contract industry, in-depth interviews are conducted. The results indicated that: 1.The human labor managing model of the CTCI flexible firm utilizes the strengths and weaknesses of their human power to form the best human resource combination model, this could help to meet the need of saving time, human force supply and technical demands, and it can also help to cut costs. 2.Through human resource flexibility, CICI flexible firm is able to implement the flexible development of their human resource management. The company is then able to enhance the flexibility of production operation, to improve business organization’s ability to respond to changes and to better the overall performance of the organization. 3.CTCI flexible firm established a series of employment model. These models not only brought the organization with abundant human resource but also provided a flexible allocation mechanism. It has potential influences in the development of business logistics management.

碩士
義守大學
管理研究所碩士班
95
Under the impact of liberalization and privatization of power industry, Taiwan Power Company (Taipower) is losing its competitive edge as a state monopoly. A great challenge facing Taipower is how to adopt to the fast changing environment by adjusting its manpower structure. A more flexible human resource strategy will then be essential to taipower for enhancing its competitiveness and diversification. In response to the shortage of energy, skyrocketing fuel price, regulation of power price and deregulation of power industry, most of the power plants in the world started to find out how to improve operating performance and to reduce the operating cost. As for Taipower, except for some new generator sets, most or its generating equipment is outdated, resulting in high maintenance expenses and personnel cost. Under the pressure for surviving in the competitive market, Taipower’s maintenance department has to resort to some strategies in order to improve its working efficiency and be more competitive. The characteristics of power maintenance industry include: capital, technique and labor intensive, having learning curve, economy of scale, customer satisfaction and having seasonal factor etc. Therefore, Stategic Human Resource Management (SHRM) will be an important topic for the Department of Power Equipment Repair and Maintenance of Taipower if it is to become the bench-marking company in the competitive environment of maintenance industry. The organization should treat human resource management as a strategic partner and adjust its human resource management strategies in response to the different environmental and organizational needs. Then, the organization should fine out the best human resource management activity to improve its performance. This thesis is a case study of the Department of Power Equipment Repair and Maintenance of Taipower. By collecting internal information (including business data, management document and in-depth interviews) as well as literature review, the study aims to identify a set of flexible human resource management strategies to improve organizational performance. The findings of the study include: 1.Flexible human resources management strategies have positive effects on organizational performance. 2.Flexible human resources management strategies can promote the maintenance technique of the organization. 3.Flexible human resources management strategies have positive effects on customer satisfaction.

Tese de Doutoramento Programa Doutoral em Engenharia Electrónica e Computadores.
Rechargeable energy storage relies mainly on lithium-ion battery technology, the same that supports most of the mobile world. This technology is under research by many groups around the world and is still considered the best way to store electrical energy from intermittent power sources. However, battery technology is limiting the evolution of many integrated electronics, especially in wearable applications; improvements in terms of energy density, higher number of life cycles, flexibility and safety are still needed. In thin-film batteries, the selection, the design structure, fabrication process and characterization of materials as well as film deposition techniques play an important role in the maximization of the battery performance, durability and reproducibility. This thesis contributes to battery technology in several ways. The use of a typical flexible substrate (Kapton®, by Dupont™) while fabricating all battery materials in the same chamber, including barrier and encapsulation materials, excluding the necessity for extra vacuum and glove-box chambers, was researched. Using only safe solid-state materials, on which no leakage or explosions can occur and replacing metallic lithium (Li) anode for a much more “friendly” material in terms of fabrication and battery cycling, battery energy density benefits. The thin-film lithium phosphorous oxynitride (LiPON) electrolyte is required to have high ionic conductivity, a negligible electrical conductivity and to be stable in contact with the anode and cathode electrodes. LiPON electrolyte was deposited by RF sputtering at different experimental conditions. The highest ionic conductivity of 1 x 10-6 S/cm was measured at ambient temperature of 35 ⁰C for a film deposited with power supply of 150 W, 20 sccm of nitrogen (N2) and a deposition pressure of 3 x 10-4 mbar. Samples with a silicon nitride (Si3N4) barrier layer, a titanium (Ti) adhesion layer and a platinum (Pt) cathode current collector layer (Kapton/Si3N4/Ti/Pt) were prepared for flexibility experiments of Kapton® substrate. Si3N4 Li barrier layer was deposited by RF sputtering deposition technique with an electric resistivity of 9.51 x 1011 Ωcm and a mean breakdown field of 1.67 MV/cm. Thin-films continued attached to the substrate after several bends. Lithium cobalt oxide (LiCoO2) cathode was deposited on top of Kapton/Si3N4/Ti/Pt structure. After LiCoO2 deposition, annealing at 400 ⁰C was performed during 1 hour at different atmospheres (vacuum and air). The films annealed in air atmosphere presented higher crystallinity, especially in the plane (101), the orientation required for batteries with improved performance and durability. Cathode LiCoO2 films were deposited by RF sputtering with a 120 W power supply, pressure of 6 x 10-3 mbar and 17/3 sccm of Ar/O2 gases, respectively. A thin-film flexible Li battery and a thin-film flexible Li-ion battery were successfully fabricated using only physical vapour deposition (PVD) techniques. The anodes of metallic Li (for Li-battery) and germanium (Ge) (for Li-ion battery) were deposited 3 μm thick by thermal evaporation and 300 nm thick by e-beam, respectively. A well-organized battery structure with smooth interfaces and good adhesion was observed by scanning electron microscope (SEM) analysis. A self-discharge was measured and related to a possible thinner electrolyte in some area between the cathode and the anode on both fabricated batteries. A low potential and retention fading along charge/discharge cycles were also measured and related to an amorphous LiCoO2. Despite the low capacity presented by the two batteries, an improvement when the Li anode was changed to Ge is evident (0.35 nAh/cm2 with Li anode, to 46 nAh/cm2 with Ge anode). A battery encapsulation with three sputtered layers: lithium phosphorous oxide (LiPO), LiPON and Si3N4, each 20 nm thick, was fabricated. After these depositions and at atmospheric conditions, an epoxy was applied on the PVD multilayer to complete the encapsulation for long term protection. Research indicates it is possible to fabricate flexible thin-film Li batteries on Kapton® substrate using only PVD deposition techniques, avoiding the necessity of extra vacuum and glove-box chambers.
O armazenamento de energia elétrica recarregável baseia-se principalmente na tecnologia de baterias de iões de lítio, a mesma que suporta a maior parte do mundo móvel. Esta tecnologia está sob investigação por muitos grupos ao redor do mundo e ainda é considerada a melhor forma de armazenar energia elétrica a partir de fontes de energia intermitentes. No entanto, a tecnologia das baterias está a limitar a evolução da eletrônica integrada, especialmente em aplicações portáteis; melhorias em termos de densidade de energia, maior número de ciclos de carga/descarga, flexibilidade e segurança ainda são necessários. Em baterias de filme fino, a seleção, a estrutura, o processo de fabricação e caracterização dos materiais, bem como as técnicas de deposição dos filmes, desempenham um papel importante na maximização do desempenho, durabilidade e reprodutibilidade da bateria. Esta tese contribui para a tecnologia das baterias de várias maneiras. A utilização de um substrato flexível típico (Kapton®, por Dupont™), enquanto todos os materiais da bateria são fabricados na mesma câmara, incluindo os materiais para encapsulamento e barreira, excluindo a necessidade de câmaras de vácuo e câmaras de luvas extra, foi investigada. Utilizando apenas materiais seguros e em estado sólido, em que derramamentos ou explosões não podem ocorrer, e substituindo o ânodo de lítio (Li) metálico por um material muito mais "amigável" em termos de fabricação e de carga/descarga da bateria, a densidade de energia da bateria beneficia. O eletrólito de filme fino de oxinitreto fosfato de lítio (LiPON) deve ter elevada condutividade iónica, condutividade elétrica negligenciável e ser estável em contacto com o ânodo e cátodo. O LiPON foi depositado por pulverização catódica de radio frequência (RF sputtering) em diferentes condições experimentais. A maior condutividade iónica (1 x 10-6 S/cm) foi medida à temperatura ambiente de 35 ⁰C para um filme depositado com 150 W na fonte, 20 sccm de azoto (N2) e 3 x 10-4 mbar de pressão durante a deposição. Amostras com uma camada de barreira, nitreto de silício (Si3N4), uma camada de adesão, titânio (Ti), e uma camada de coletor de corrente do cátodo, platina (Pt), (Kapton/Si3N4/Ti/Pt) foram preparadas para as experiencias de flexibilidade do substrato de Kapton. A camada de barreira aos iões de lítio, Si3N4, foi depositada por RF sputtering com uma resistividade elétrica de 9.51 x 1011 Ωcm e uma tensão média de rotura de 1.67 MV/cm. Os filmes finos continuaram em cima do substrato após várias dobragens do mesmo. O cátodo de óxido de lítio cobalto (LiCoO2) foi depositado no topo da estrutura Kapton/Si3N4/Ti/Pt. Após a deposição do LiCoO2, um recozimento a 400 ⁰C foi realizado durante 1 hora a diferentes atmosferas (vácuo e ar). Os filmes recozidos em atmosfera de ar apresentaram maior cristalinidade, especialmente no plano (101), a orientação necessária para baterias com melhor desempenho e durabilidade. Os filmes de LiCoO2 foram depositados por RF sputtering com 120 W na fonte, 6 x 10-3 mbar de pressão e 17/3 sccm de gases Ar/O2, respetivamente. Uma bateria de Li e uma bateria de Li-ion, flexíveis e em filme fino, foram fabricadas com sucesso usando apenas técnicas de PVD. Os ânodos de Li metálico (para a bateria de Li) e germânio (Ge) (para a bateria de Li-ion) foram depositados com 3 μm de espessura por evaporação térmica e 300 nm de espessura por feixe de eletrões, respetivamente. Uma estrutura bem organizada, com interfaces regulares e boa adesão entre os filmes foram observados na bateria por microscopia eletrónica de varrimento (SEM). Auto-descarga foi medida e relacionada com uma área mais fina entre o eletrólito e o cátodo em ambas as baterias fabricadas. Um baixo potencial e um enfraquecimento na retenção de carga ao longo dos ciclos de carga/descarga também foram medidos e relacionados com o facto de o LiCoO2 ser amorfo. Apesar da baixa capacidade apresentada pelas duas baterias, uma melhoria quando o ânodo de Li foi alterado para o ânodo de Ge é evidente (0.35 nAh/cm2 com ânodo de Li e 46 nAh/cm2 com ânodo de Ge). Um encapsulamento para a bateria com três camadas: óxido fosfato de lítio (LiPO), LiPON e Si3N4, cada uma com 20 nm de espessura, foi fabricado por RF sputtering. Depois destas deposições e em condições atmosféricas, uma epóxi foi aplicada sobre a multicamada fabricada por PVD, para completar o encapsulamento para a proteção a longo prazo. A investigação indica que é possível fabricar baterias de Li em filme fino no substrato flexível Kapton®, utilizando apenas técnicas de deposição por PVD, evitando assim a necessidade de câmaras de vácuo e de luvas suplementares.
Fundação para a Ciência e a Tecnologia (FCT) SFRH/BD/78217/2011.
CRUP AI TC-09_14 and KNMF 2014-011-003169.

碩士
國立中山大學
材料科學研究所
96
In this research, CuInSe2 thin film is grown at 350℃ low temperature by photo-assisted co-evaporation system to fabricate PI (polyimide) substrate flexible thin film solar cells. The low temperature growing CuInSe2 is analyzed by raman spectroscopy. Besides, sputtering Mo thin film on PI and CIS/Mo/PI contact properties are also researched for device fabrication. By studying the Ar pressure and Mo internal stress relationship during the deposition, the Mo layer has been fabricated with both low resistivity and good adhesion. The sheet resistance of Mo layer is 1.95 Ω/□ and shows ohmic contact with CuInSe2 at temperature below 350℃. Raman spectroscopy shows that photo-assisted CuInSe2 has stronger and thinner A1 peak than which without light. Two-stage growing can help eliminating Cu2Se and background signals further. CA structure vibration modes are involved in the asymmetric A1 peak broadening. The SLG/Mo/CIS/CdS/ZnO:Al/Al structured device has open voltage, Voc = 0.320 V, short cut current, Isc = 3.61 mA, and solar cell fill factor, FF = 49.8 %. On the other hand, PI/Mo/CIS/CdS/ZnO:Al/Al structured device has open voltage, Voc = 0.318 V, short cut current, Isc = 2.71 mA, and solar cell fill factor, FF = 39.0 %。

碩士
聖約翰科技大學
自動化及機電整合研究所
101
CIGS has become one of the most important materials of thin film solar cells because of its high absorption efficiency. This work investigates the processing parameters of flexible CIGS solar cells. The Mo conducting films is sputtered on stainless steel shells, and utilizes CuGa and In targets to sputter CIG precursor films on the Mo/stainless steel substrates. Then, combines the CIGS absorption layers with high temperature selenization. The surface roughness, micro structure, composition, crystallization, residual stress, and conductivity of the CIGS are characterized by the 3D profiler, scanning electronic microscope, energy dispersive spectrometer, X-ray diffraction machine, and Hall effects meter. Various precursor CuGa/In ratios are studied. The results show that the CIGS fabricated with sputtering 30 min In first, then sputtering CuGa and keeping CuGa/In=1/2 behaves the best performance. It is because that deposition In precursor at first can prevent it loses during high temperature selenization and improves the crystallization and conductivity of CIGS.

碩士
國立彰化師範大學
光電科技研究所
102
In this thesis, we study the characteristics of flexible organic thin film transistors and its application to gas sensor. In first section, we have fabricated the pentacene, one of the most popular organic semiconductors, thin film transistors with/without buffer layer on PET substrate. With suitable buffer layer on PET substrate, the transistors’ performance could be dramatically raised, such as the field effect mobility was raised orders and achieved an average of 1 cm2/vs. Next, the pentacene transistors were measured under compressive and tensile status with different curved radius. At flat condition, the device has a mobility of 0.88 cm2/vs, then it downgraded to 0.74 cm2/vs after tensile stress at curved radius 2.5 cm. However the mobility was enhanced slightly at compressive status with curved radius 1.5 cm. Those phenomena could be owing to the tiny rearrange of pentacene molecule at different curved status and would be detail discussed in thesis. Finally, a gas sensor with above mentioned pentacene transistor structure was measured in ambient gas, nitrogen gas, oxygen gas and water vapor, respectively. It shows that pentacene was sensitive to oxygen and water, but not nitrogen. Pentacen transistors also need a longer recovered time for exposure to water, 27 sec, than the recovered time for exposure to oxygen, 3.3 sec.

abstract: A low temperature amorphous oxide thin film transistor (TFT) backplane technology for flexible organic light emitting diode (OLED) displays has been developed to create 4.1-in. diagonal backplanes. The critical steps in the evolution of the backplane process include the qualification and optimization of the low temperature (200 °C) metal oxide process, the stability of the devices under forward and reverse bias stress, the transfer of the process to flexible plastic substrates, and the fabrication of white organic light emitting diode (OLED) displays. Mixed oxide semiconductor thin film transistors (TFTs) on flexible plastic substrates typically suffer from performance and stability issues related to the maximum processing temperature limitation of the polymer. A novel device architecture based upon a dual active layer enables significant improvements in both the performance and stability. Devices are directly fabricated below 200 ºC on a polyethylene naphthalate (PEN) substrate using mixed metal oxides of either zinc indium oxide (ZIO) or indium gallium zinc oxide (IGZO) as the active semiconductor. The dual active layer architecture allows for adjustment in the saturation mobility and threshold voltage stability without the requirement of high temperature annealing, which is not compatible with flexible colorless plastic substrates like PEN. The device performance and stability is strongly dependent upon the composition of the mixed metal oxide; this dependency provides a simple route to improving the threshold voltage stability and drive performance. By switching from a single to a dual active layer, the saturation mobility increases from 1.2 cm2/V-s to 18.0 cm2/V-s, while the rate of the threshold voltage shift decreases by an order of magnitude. This approach could assist in enabling the production of devices on flexible substrates using amorphous oxide semiconductors.
Dissertation/Thesis
M.S. Chemical Engineering 2011

碩士
義守大學
電子工程學系碩士班
98
The capacitors were fabricated on flexible substrates by using spin coating process various ratio of high dielectric constant ceramic materials were mixed with low dielectric constant resins by a triple roller. The effect of high permittivity materials on the dielectric properties were investigated. In addition, conductive materials were added in to the matrix to increase dielectric constant of composites. Dielectric properties of the composite depend on the amount of high permittivity ceramics and higher amount of ceramics result in higher dielectric constant. The dielectric constant of 25wt% al added 50wt% BaTiO3+50 wt%ITK5517 specimen is 127 measured at 1kHz and dissipation factor is 0.05. The addition of conductive Al particles greatly enhance dielectric constant of the composites.

碩士
國立宜蘭大學
機械與機電工程學系碩士班
101
VDF, a piezoelectric polymer, is suitable for flexible devices because of its flexibility and lightweight. In this article, the authors adopt commercial PVDF film to make a film loudspeaker. The proposed film loudspeaker is a sandwiched membrane structure which contains a PVDF film sandwiched in between two silver electrode-layers. An audio signal is applied to the PVDF film, which responds by the mechanical deflection in proportion to the voltage applied across the PVDF film, thus converting electrical energy into mechanical vibration. Therefore, the coupled electromechanical characteristic of the compound membrane dominates the performance of the loudspeaker. This work is to find the resonant frequencies and vibration mode shapes of the proposed PVDF film loudspeaker as well as its frequency response over the audible range (20 Hz – 20 kHz). To measure the dynamic response of the PVDF film loudspeaker to driving voltage, the authors make a test frame by acrylic plates. The PVDF film loudspeaker is clamped in the test frame by four screws. A sine-wave AC voltage is applied on the PVDF film loudspeaker by a function generator. The driving frequencies are scanned in the audible range, namely 20 Hz to 20 kHz. The vibration of the PVDF film loudspeaker is measured by a laser Doppler Vibrometer. This article studies on the coupled electromechanical characteristic of the compound membrane of the PVDF film loudspeaker. In the near future, the design of the PVDF film loudspeaker can be optimized according to the results of this work.

碩士
義守大學
材料科學與工程學系
103
In this study, electroless Nickel and Nickel – Cobalt coatings were deposited on three kinds of flexible substrates (graphite paper, titanium foil, carbon fiber paper), and these coatings further etched in a 5M HNO3 solution to improve the electrochemical characteristics. Using a three-pole electrode system, cyclic voltammetry and charge-discharge curve were measured to calculate the specific capacitance, and electrochemical impedance spectroscopy (EIS) was used to analyze the electrochemical reaction mechanisms. In addition, the effects of Ni/Co ratios of Ni-Co-P system and etching time on the microstructure and the specific capacitance were explored in details. The results showed that nickel-phosphorus coating on the graphite paper substrate exhibited the highest specific capacitance (71 F/g) than the others (Titanium foil: 30 F/g; carbon fiber paper: 52 F/g) under the same plating conditions. After etching in HNO3 solution for 10s, the specific capacitance of Ni-P coating on graphite paper increased up to 335 F/g, in which the specific capacitance of Ni-P coating increase to 4.7 times as compared with the unetched one. Once the etching time was further increased, it did not significantly increase the specific capacitance. Microstructures analysis revealed that an appropriate etching time can effectively increase the surface area of Ni-P coatings and the prolonged etching time damaged the Ni-P coatings and finally the etched coatings peeled off. To deposit Ni-Co-P coatings on graphite paper, the pH value of electroless bath should be changed into 9. The specific capacitance value is not significantly improved by the addition of Co, but the corrosion resistance of the coating is improved. After etching in 5M nitric acid solution, it also significantly raised specific capacitance, for Ni/Co=70/30 system, at a scan rate of 10mV/s, from 51 F/g to 237 F/g. Based on the above the results, the acid-etching treatment effectively increased the specific capacitance of the Ni-P and Ni-Co-P system, it is expected that such method be applied to other material systems.

博士
國立清華大學
化學工程學系
94
This study is mainly to discuss the positive temperature coefficient (PTC) effect of Polymer Conductive Composite (PCC), which includes the preparation for Ni composite particle, polyimide and polystyrene-co- butylacrylate matrix, particularly the temperature-resistance behavior of composite films. What would be the impact to PTC feature for composite film, by changing the combination of above factors, as well as the process, is our major interest in overall study. The study consists of 3 main topics: Part I. Micro Ni-plated SiO2 particle/polyimide matrix system Part II. Core-shell type P(S-DVB) Ni-plated particle/P(S-co-nBA) matrix system Part III. The thickness-direction PTC feature of micro Ni powder/ polyimide matrix system

碩士
國立中興大學
光電工程研究所
100
In this thesis, we study a nanocomposite dielectric for flexible a-IGZO Thin Film Transistors, it combines both organic polymer PVP and inorganic nanoparticle aluminum oxide to perform the gate dielectric.The uniqe advantage of the gate dielectric is that simple and solution process, first we find the optimization parameter of gate dielectric which used as a MIM structure, and we spin coated the gate dielectric in the glass and PEN substrate.In combination of both organic and inorganic gate dielectric electrical characterization was well and good, and we found two major advantages one is thate always in the enhancement mode, and the other one is robust when it is bending more than one hundred times.The TFT performance was without adding Al2O3 was exhibit 0.48 cm2/V-s of mobility, 0.3 V of threshold voltage, 104 of on off ratio and 0.98V/dec of subthreshold swing, and after adding the Al2O3 the TFT was improved to 5.01 cm2/V-s of mobility, 1.9 V of threshold voltage, 106 of on off ratio and 1.2V/dec of subthreshold swing.

碩士
明新科技大學
電機工程系碩士班
103
In this paper, three materials including glass epoxy (FR4), polyimide film (PI) and photo paper (PP) are used as the substrate of antenna. IE3D software is used to design planar dipole antennas with various substrates.The fabricated planar dipole antenna with FR4 substrate can be applied to 1200MHz and 1800MHz frequency bands, the antenna withPI substrate can be applied to 2100MHz, 4800MHz and 5800MHz frequency bands, and the antenna with PP substrate can be applied to 5300MHz and 5600MHz frequency bands. In this study, the size parameter L2 and the substrate material of antenna are changed to observe the variations of antenna characteristics. The PI film thickness and curing process are discussed in this thesis.The thickness of PI substrate about 0.12mm and two vacuum curing processesare obtained to achieve betterimpedance value. Changing L2 parameters of planar dipole antennas with FR4 substrate, two antennas are proposed in this study.The antenna withbandwidth from1070MHz to 1370MHz,reflection loss -29.3dB and the maximum gain 4.296dBi at 1200MHz can be used for 1200MHz wireless monitors. The antenna with bandwidth from 1.78MHz to 1.98MHz,reflection loss -32.3dB and maximum gain 3.593dBi at 1800MHz can be used in LTE 1800MHz. With suitable L2 parameter, the inkjet printer is used to print silver nanoparticles and fabricate three flexible thin-film antennas with PI substrates. The bandwidths of these antennas are from 1500MHz to 2500 MHz,4200 MHz to 4950 MHz and 5400 to 5800 MHz.The reflection loss is -17.6dB and maximum gain is 2.183dBi at 1200MHz. The reflection loss is -38.9dB and maximum gain is 3.509dBi at 4800MHz. The reflection loss is -16.4dB and maximum gain is 3.599dBi at 5800MHz. These antennas can be applied to LTE 2100MHz, C-Band 4800MHz, and WLAN (801.11ac) 5800MHz frequency bands. PP substrate, suitable L2 parameter, and silver nanoparticles are used to produce three flexible thin-film antennas with PP substrates. The bandwidths of these antennas are from 5100MHz to5500MHz, 4600MHz to 5400MHz, and5300MHz to 5700MHz.One antenna exhibits reflection loss-22.5dB,maximum gain3.257dBi at 5300MHz and another antenna with reflection loss -37.6dB andmaximum gain4.175dBiat 5300MHz. The reflection loss is -32.4dB and the maximum gain is 4.834dBi at 5600MHz. These antennas can be applied to WLAN (801.11ac) 5300MHz, WLAN (801.11ac) 5600MHz. Keywords: planar dipole antenna, silver nanoparticles, flexible thin-film,LTE, WLAN, PI, PP.

碩士
國立臺灣師範大學
物理學系
103
In our life, there are more and more portable electronic devices and wearable electronic devices when the technology is improving all the time. Therefore, the requirement of batteries is more important now. Because all-solid-state thin film battery feature with good safety and high energy density, it is much potential for the development of future work. In our experiment, we try to make all-solid-state thin film batteries. We use ruby mica scratchfree to be the substrate. First, we deposit platinum by direct current sputtering as a current collector. Then, we deposit lithium cobalt oxide (LiCoO2) cathode material and lithium phosphorus oxynitride (LiPON) solid electrolyte on the platinum current collector by radio frequency sputtering. Finally we fabricate the lithium metal and aromatic polyurea to be the anode material and encapsulation by thermal evaporation. We use the furnace and rapid thermal annealing (RTA) to heat the cathode material, and control the heating rate of machine. We use x-ray diffraction to analyze the crystalline structure. Scanning electron microscope is used to observe the surface morphology, and capacity test is able to decide the chemical properties of cathode material. In the part of solid electrolyte, we use hot plate to heat the LiPON film in different temperature. And we measure the electrochemical impedance spectroscopy to calculate the ion conductivity. Using the rapid thermal annealing (RTA) at the rate of 260oC/min is a good way to heat the LiCoO2 film. And we use hot plate at the 200oC to do the heat treatment of LiPON film. Finally, we use the thermal evaporation to evaporate the lithium metal. The complete all-solid-state thin film battery can do the cycle test and light the LED.

This work documents the fabrication and characterization of electrochromic thin-film transistors (ECTFTs) based on tungsten oxide (WO3). The ECTFTs exhibit double functionality (optical and electrical modulation) and were deposited on Corning glass and polyethylene naphthalate (PEN) by radio-frequency (RF) magnetron sputtering in an argon-oxygen atmospherewith no intentional substrate heating. The resulting amorphous WO3film connects source and drain in a planar configuration with three different architectures(conventional, interdigital and back-electrode) and isgated by a drop-casted lithium-based polymer electrolyte (LiClO4:PC). EC films were characterized using X-ray diffraction (XRD), atomic force microscopy (AFM)andopto-electrochemical measurements, the electrolyte by electrochemicalimpedance spectroscopy (EIS) and the ECTFTs by static and dynamic electrical characterization. Thinner EC films (75 nm) evidenced lower optical density (ΔOD) and color efficiency (CE) of 0,26 and 21,85 cm2C-1, respectively, but faster EC reaction kinetics, with bleaching and coloration times (tband tc) of 1,8 and 3,8 seconds, respectively. In terms of electrical properties the best performing ECTFT architecture (interdigital) showed an ION/IOFFof 2,81x105and a transconductance of 2,24 mS. The back-electrode architecturehowever showed better ionic movement control in the channel(adjustable VON)with enhanced colorations, making ita better candidate for a two-in-one (pixel + transistor) solution for display applications.

碩士
國立高雄應用科技大學
化學工程系碩士班
95
At present, TCO material is often applied in the manufacturing of LCD, plasma screens, and in flat-panel displays as panel electrode film material. However, the main application is using the physical vapor deposition (PVD) based vacuum evaporation method or magnetic enhanced sputtering to deposit thin film metal TCO, such as indium tin oxide (ITO). This glass material substrate has such disadvantages as fragility, heaviness, and the failure to fit in the continuous rolling manufacturing procedure. Along with the introduction of the roll to roll production model into flexible manufacturing procedures of panels, some transparent conducting films using polymer flexible material as the substrate to form flexible transparent conducting film, have the potential to be future electrode materials of flexible displays. Few studies on the physical properties of flexible transparent conducting film have been conducted; therefore, a series of physical properties of flexible transparent conducting film were in this study researched to provide reference for manufacturers to further develop flexible displays. This study makes use of the low resistance range in order to measure the chip resistor of flexible transparent conducting film, for addressing the influence of annealing temperature on resistor. Through the measurement of two-dimension apparatus, we are able to acquire the dimension changes of flexible transparent conducting film before and after annealing, to observe the influence of annealing temperature on the dimension stability of material, to examine whether annealing temperature will change the surface structure, element composition and content, or if it will lead to major defects via SEM and EDS. In addition, aqueous solution containing 5% acetic acid is used for etching conducting film to examine the influence of temperature on the etching speed on conducting film. In the end, Osuka optical inspection equipment and a haze meter are used to the measure the influence of light transmission and haze after substrate is applied on the conducting film.

碩士
國立臺北科技大學
環境規劃與管理研究所
93
Corporate sustainability has a challenge, for it not just tries to create financial benefits, but also intents to pursue “win-win” vision for achieving both economic development and environmental protection. Leading company, such as 3M has carried out innovative “cleaner production” and “waste minimization” programs since 80s’, which resulted in accomplishing various environmental goals, as well as creating 750 million USD of financial benefits. PVC industry, although contributes quite a lot to the Taiwan’s economic miracle during past decades, has long being considered as a highly polluted and “unhealthy” industry. In order to realize the vision of sustainability, PVC firms in Taiwan have gradually switched their traditional end-of-pipe treatment techniques to the innovative measures, such as waste minimization, cleaner production, pollution prevention and industrial ecology for improving the resource productivity. These approaches enhance business image, also help company to cut-cost as well. In this study, flexible PVC film industry is selected for analyzing the possibility of forming an eco-industrial system for PVC industry. A flexible PVC film factory is used as a case study to examine the pathways, strategies and benefits of forming such an eco-industrial system. The study also intentionally tries to evaluate and verifies the continuum of industrial symbiosis theory through the flexible PVC film industry. It is concluded that the benefits found from the case study, both ecological and economical, prove that industrial ecology system formed within PVC industry will benefit not just industry itself, but also the environment and whole society.

碩士
國立臺灣科技大學
化學工程系
106
This thesis was describes a composite of 2,2,6,6-tetramethyl-1-piperidinyloxy radical (TEMPO) oxidized cellulose nanofibers (TOCNFs), Zinc oxide (ZnO) and carbon dots (Cdots) used as a photoanode and a composite of TOCNF and polypyrrole(PPY) as a counter electrode which was applied on the dye-sensitized solar cell. TOCNF was prepared based on the TEMPO-mediated oxidation procedure, and ZnO nanorods(ZnO NR) and ZnO nanowires(ZnO NW) and Cdots were prepared by hydrothermal method. And ZnO nanoparticle (ZnO NP) was prepared by polyol method. ZnO NR was in-situ grown on TOCNF, the composite of TOCNF and ZnO NR was prepared, and this was used as a photoanode in dye-sensitized solar cell. ZnO NP optimized 100 mg was loaded on TOCNF-ZnO NR electrode, the energy conversion efficiency 0.05 % was obtained from this electrode. The weight ratio of ZnO NP with Cdots was optimized 1/0.6 and loaded on the TOCNF-ZnO NR electrode. The energy conversion efficiency 0.117% was obtained from this electrode. The ratio of COOH: NH2 in Cdots was optimized 1:1.5, then energy conversion efficiency was 0.18%, could be enhanced from 0.18 to 0.246% by changing ZnO NP to ZnO NW. TOCNF-ZnO NW electrode which was loaded ZnO NP and Cdots had better photovoltaic performance than TOCNF-ZnO NR electrode which loaded ZnO NP and Cdots, and the energy conversion was increased from 0.18 to 0.4%.

碩士
國立中興大學
奈米科學研究所
106
A high-sensitive, low-cost and portable strain sensing technology based on gold nanoparticles (AuNps) is developed. For this goal, AuNPs were self-assembled on flexible substrates, forming closely packed multilayer films by centrifugal method, followed by appropriate chip packaging technique. AuNPs were modified with 3-mercaptopropionic acid(MPA), which has a length of about 0.9nm. As such the typical resistance of our sensors are in the range of 1-20 MΩ. When strains are applied to the substrate, the distance between adjacent AuNPs is changed, inducing the variations on the device resistance and capacitance. The sensors made on polydimethylsiloxane (PDMS) substrate may have the gauge factor up to 430. It can sense the pressure change with a sensitivity of 0.396kPa^(-1). The nominal power consumption is very low, about 15~24 nW. The capacitance change with a sensitivity of -36.4 and 22.5. For studying the response time, sensors were tested under mechanical vibrations of different frequency. The resistance change can be clearly identified up to a vibration frequency of 1 kHz. With the different frequency response, the sensors can find theirs applications in human pulse sensing, motion detection, and voiceprint recognition.

碩士
正修科技大學
電機工程研究所
107
In this study, the LixWO3 powder was fabricated by WO3 mixed with Li2O. The electrochromic films were prepared by electron beam evaporation. It was expected that the amount of charges storage could be enhanced by using the doping method, which makes the optimal performance of electrochromic devices (ECD). By constructing the ECD structure of Li0.2WO3/ Gel-electrolyte / ITO PET, the optimal characteristics of ECD are obtained at applying voltage of 1.8V, in which, the transmittance change (ΔT%) is 33%, the optical density (ΔOD) is 7.56, the intercalation charge (Q) is 5.94 mC/cm2 and the color efficiency (η) is 92 cm2/C at wavelength of 550 nm, respectively. The transmittance of colored state increases from 7% to 38% after 24 hour without biased voltage at R.T. The previous study was deposited the optimal properties on the glass substrate and this study was deposited on the PET substrate. This study was worse than the previous study because when PET was prepared by hot pressing, the films have cracking and peeling which will let the devices become uneven during coloring/bleaching.

碩士
國立中山大學
材料科學研究所
96
This paper describes an investigation into the fabrication of absorber layer CuInSe2 films by co-evaporation process. And we used the stainless steel substrates to manufacture Al / ZnO:Al /ZnSe(CdS) / CuInSe2 / Mo /SiO2 / Stainless Steel(SS) flexible thin-film solar cell. In this study, we fabricated the main absorber layer CIS thin film by co-evaporation process including two steps, and CIS thin films parameters were estimated by sheet resistance. Under one-sun (AM1.5,100mW/cm2) conditions solar simulator, we compared the solar cell with different thickness of absorber layer, co-evaporation process and composition to improve solar cell performance. The energy conversion efficiency of the CIS thin-film solar cell (Al/ AZO/ CdS /CIS/Mo/ SLG) was 4.5﹪(Voc =0.38 V，Jsc = 30.5 mA ，FF = 38.6 ﹪), flexible solar cell (Al/AZO/CdS/CIS/Mo/SiO2/SS) was 2.6%( Voc =0.2 V，Jsc = 41.7 mA ，FF = 31.2 %).

碩士
國立臺北科技大學
有機高分子研究所
100
The flexible reflector film is a kind of high reflectivity and low light transmittance function of diaphragm, which is widely used in 3C products. Currently available reflector film can be divided in three type, such as (1)cyclical multilayer reflector film (2)metal reflecor film (3)white reflector film. Among those, metal reflector film is easier processable than cyclical multilayer reflection film, and has better work wavelength range and the reflection rate than white reflector film. However, metal reflecor film is easily oxidized in air. Therefore, a layer of cover layer is necessary to to protect the metal layer.. In this thesis, a cover layer with white ink coating on metallic reflector using roller to roller coating process is presented. Two metallic reflector films (Ag and Al) are investigated. Applying white ink coating, the metallic reflector films showed the reflectivity increased 2% and total light transmittance decreased 2%. The resulting film has passed after the weathering test.

碩士
國立雲林科技大學
電子與資訊工程研究所
94
ABTRACT In this study we use Indium-Tin Oxide (ITO) to deposit films on flexible substrate as the conductive electrode used for flexible display. Besides we produced MIM capacitance and measured electrical properties to improve the character of ITO films. ITO films were deposited by Rf reactive magnetron sputtering. We design several conditions such as RF power, substrate temperature, process pressure, and the distance between ITO target and substrate to obtain better films of transparent conducting oxide. At the result we obtained good electrical and optical properties. The resistance ratio of ITO films is 5.67×10-4 Ω•cm and The UV-visible spectra indicate that the average optical transmittance of ITO films is around 83% in the visible range by 4-inches ITO target. And then we produced MIM capacitance, used HfO2 and Al for dielectric layer and upper electrode. We also deposit Ti film used for buffer layer and used Ar plasma treatment to improve the quality of ITO films. Finally we find the best condition with 5 min and 3 min Ar plasma treatment on the surface of flexible substrate and ITO films that we obtained the best electrical properties.

碩士
國立交通大學
顯示科技研究所
98
In this study, we fabricated flexible organic thin-film transistors on stainless steel substrates, and their electrical characteristic were measured under different bending conditions. We found that the electrical characteristic was increased under compressed strain and decreased under tensile strain. From the analysis of the results, we deduced that the variety of intermolecular force change the device characteristic under bending strain states. mechanical strains influence the barrier height between the grains of pentacene thin-films, thereby resulting in the variation of device characteristic.

碩士
國立暨南國際大學
電機工程學系
94
The purpose of this thesis is to fabricate pentacene organic thin-film transistors (TFT) on flexible substrate﹐measure and study their electrical characteristics. Fabricating organic TFT on plastic substrate as switching device is necessary for the flexible display and the so-called electronic paper. Although, displays made from organic materials have been developed and even commercialized in recent years, improvements in some of their characteristics, such as carrier mobility, are still needed. Conventionally, most TFTs are fabricated on inorganic silicon wafer or glass substrate because silicon or glass substrate can endure high processing temperature. On the other hand, low processing temperature of organic TFTs allows them to be fabricated on plastic substrate. In this work, we tried to fabricate a OTFT on a flexible substrate, the PET（polythylene terephthalate）. According to the literature, organic TFT using pentacene as the active layer can have the highest mobility which is about 3cm2V-1S-1. Therefore, we used pentacene as the active layer for our organic TFT. In this thesis we successfully demonstrated the fabrication of pentacene organic TFT on PET plastic substrate. The highest mobility of our OTFT is only about μ  0.04 cm2V-1S-1 due to high gate leakage current and the plastic substrate shrinkage during thermal processing. The substrate shrinkage and gate leakage current are likely to be eliminated by adopting alternative device structure so that high-temperature damage during source/drain evaporation can be avoided, and by carefully performing flexible substrate pre-cleaning process as well as pre-heating the flexible substrate to reduce substrate shrinkage during subsequent processing.

abstract: A low temperature amorphous oxide thin film transistor (TFT) and amorphous silicon PIN diode backplane technology for large area flexible digital x-ray detectors has been developed to create 7.9-in. diagonal backplanes. The critical steps in the evolution of the backplane process include the qualification and optimization of the low temperature (200 °C) metal oxide TFT and a-Si PIN photodiode process, the stability of the devices under forward and reverse bias stress, the transfer of the process to flexible plastic substrates, and the fabrication and assembly of the flexible detectors. Mixed oxide semiconductor TFTs on flexible plastic substrates suffer from performance and stability issues related to the maximum processing temperature limitation of the polymer. A novel device architecture based upon a dual active layer improves both the performance and stability. Devices are directly fabricated below 200 ºC on a polyethylene naphthalate (PEN) substrate using mixed metal oxides of either zinc indium oxide (ZIO) or indium gallium zinc oxide (IGZO) as the active semiconductor. The dual active layer architecture allows for adjustment to the saturation mobility and threshold voltage stability without the requirement of high temperature annealing, which is not compatible with flexible plastic substrates like PEN. The device performance and stability is strongly dependent upon the composition of the mixed metal oxide; this dependency provides a simple route to improving the threshold voltage stability and drive performance. By switching from a single to a dual active layer, the saturation mobility increases from 1.2 cm2/V-s to 18.0 cm2/V-s, while the rate of the threshold voltage shift decreases by an order of magnitude. This approach could assist in enabling the production of devices on flexible substrates using amorphous oxide semiconductors. Low temperature (200°C) processed amorphous silicon photodiodes were developed successfully by balancing the tradeoffs between low temperature and low stress (less than -70 MPa compressive) and device performance. Devices with a dark current of less than 1.0 pA/mm2 and a quantum efficiency of 68% have been demonstrated. Alternative processing techniques, such as pixelating the PIN diode and using organic photodiodes have also been explored for applications where extreme flexibility is desired.
Dissertation/Thesis
Doctoral Dissertation Chemical Engineering 2016

碩士
國立成功大學
工程科學系碩博士班
93
This study consider the influence to the residual strain affected cooling process, the elastic mechanical analysis of hard film on flexible thick substrate inducing externally bending force, then apply the discussion of failure criteria on Flexible Organic Light-Emitting Diode and Inorganic ceramic films about their hard film thickness. 　As the change of film thickness in analysing, stiffness per unit area ratio of hard film and soft substrate is 0.03~3, and stiffness per unit area ratio of soft film and hard substrate is ~ . Stiffness of the hard film obviously rises with increase of the film thickness, and it causes sizable influence to strain and damage. But influence of soft film seems insignificant to compare with hard substrate. 　From the analysis of FOLED(Flexible Organic Light-Emitting Diode),one can see a tendency that the net strain distribution of bending structures was smaller for specimens with thinner ITO coating thickness, and in FOLED device ,barrier layer is also a critical factor for film net strain. Suggesting that use of moisture and oxygen barrier layer with high Young’s modulus to increase structure stiffness and then reduce ITO film strain, it can improve the reliability and life of devices. 　In the analysis of the multi-layer film of ceramics, we can obtain the largest thickness of evaporated SiOx under different bending radius of curvature, let the ceramic films avoid producing the crack in using. And from the analytic result of the ceramics multi-layer film , offer the suggestion of best buffer layers thickness for designer.

碩士
國立交通大學
顯示科技研究所
97
Polymer gate dielectrics are the most promising dielectric candidates for organic thin-film transistors (OTFT). In this study, we used photo cross-linked polymers as the photopatternable polymer dielectric layer. Two kinds of photopatternable polymer insulators, polyvinyl alcohol (PVA) and polyvinyl cinnamate (PVCN). Thermally evaporated pentacene and gold were used as the active layer and the source-drain electrodes.The result showed that PVA-based devices have large hysteresis, which was probably due to the OH groups of PVA. On the other hand, PCVN-based devices exhibited hysteresis-free performance.　Moreover, the PCVN-based devices also have higher on/off ratios and the devices were more air-stable. For the bending measurements, we observed no significant decay of the field-effect for the devices made on flexible stainless substrates.