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Wanarattikan, Pornsiri, Piya Jitthammapirom, Rachsak Sakdanuphab i Aparporn Sakulkalavek. "Effect of Grain Size and Film Thickness on the Thermoelectric Properties of Flexible Sb2Te3 Thin Films". Advances in Materials Science and Engineering 2019 (8.01.2019): 1–7. http://dx.doi.org/10.1155/2019/6954918.
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In this work, stoichiometric Sb2Te3 thin films with various thicknesses were deposited on a flexible substrate using RF magnetron sputtering. The grain size and thickness effects on the thermoelectric properties, such as the Seebeck coefficient (S), electrical conductivity (σ), power factor (PF), and thermal conductivity (k), were investigated. The results show that the grain size was directly related to film thickness. As the film thickness increased, the grain size also increased. The Seebeck coefficient and electrical conductivity corresponded to the grain size of the films. The mean free path of carriers increases as the grain size increases, resulting in a decrease in the Seebeck coefficient and increase in electrical conductivity. Electrical conductivity strongly affects the temperature dependence of PF which results in the highest value of 7.5 × 10−4 W/m·K2 at 250°C for film thickness thicker than 1 µm. In the thermal conductivity mechanism, film thickness affects the dominance of phonons or carriers. For film thicknesses less than 1 µm, the behaviour of the phonons is dominant, while both are dominant for film thicknesses greater than 1 µm. Control of the grain size and film thickness is thus critical for controlling the performance of Sb2Te3 thin films.
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Chen, Yen-Hua, i Kuo-Jui Tu. "Thickness Dependent on Photocatalytic Activity of Hematite Thin Films". International Journal of Photoenergy 2012 (2012): 1–6. http://dx.doi.org/10.1155/2012/980595.
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Hematite (Fe2O3) thin films with different thicknesses are fabricated by the rf magnetron sputtering deposition. The effects of film thicknesses on the photocatalytic activity of hematite films have been investigated. Hematite films possess a polycrystalline hexagonal structure, and the band gap decreases with an increase of film thickness. Moreover, all hematite films exhibit good photocatalytic ability under visible-light irradiation; the photocatalytic activity of hematite films increases with the increasing film thickness. This is because the hematite film with a thicker thickness has a rougher surface, providing more reaction sites for photocatalysis. Another reason is a lower band gap of a hematite film would generate more electron-hole pairs under visible-light illumination to enhance photocatalytic efficiency. Experimental data are well fitted with Langmuir-Hinshelwood kinetic model. The photocatalytic rate constant of hematite films ranges from 0.052 to 0.068 min-1. This suggests that the hematite film is a superior photocatalyst under visible-light irradiation.
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Chanthong, Thawatchai, Weerawat Intaratat i Thanate Na Wichean. "Effect of Thickness on Electrical and Optical Properties of ZnO:Al Films". Trends in Sciences 20, nr 3 (18.01.2023): 6372. http://dx.doi.org/10.48048/tis.2023.6372.
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Zinc oxide (ZnO:Al) films were prepared on a substrate of different thicknesses by sputtering at 1×10−2 mbar argon gas pressure and 200 W power. The effect of film thickness on the structural, electrical, and optical properties was investigated by X-ray diffraction (XRD), 4-point probe technique, and ultraviolet-visible spectroscopy. The XRD film crystal structure study revealed that all sample films at thicknesses of 66, 106, 150 and 193 nm, respectively, exhibited planar Hexagonal wurtzite crystal structure (002), and ZnO crystals were grown along the c-axis. The ZnO:Al film at a thickness of 66 nm had the highest strain and the smallest crystal size compared to other films. The electrical resistivity decreases with increasing film thickness. The sample at 193 nm has the lowest resistivity (1.37 Ω.m). The results showed that light transmission revealed that all sample films had high transparency in the white and near-UV region at a wavelength of 350 to 800 nm, with an average light transmittance shift of 85 - 95 %. The energy band gap increased with the film thickness of 3.49(66 nm), 3.55(106 nm), and 3.59(150 nm) eV, and decreased to 3.57 eV at 193 nm, respectively. HIGHLIGHTS The different thicknesses Zinc oxide (ZnO:Al) films were prepared by sputtering at 1×10-2 mbar argon gas pressure and 200 W power was used to study the effect of film thickness on the structural, electrical, and optical properties The electrical resistivity changing of ZnO:Al film depends on the film thickness. The electrical resistivity is reduced with increasing ZnO:Al film thickness The ZnO:Al film are highlighted by their characteristics for light transmission at the wavelengths between 350 and 800 nm, and exhibited exceptional transparency in the white and near-UV range GRAPHICAL ABSTRACT
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ESWARAMOORTHI, VELUCHAMY, i RAYAR VICTOR WILLIAMS. "EFFECT OF THICKNESS ON MICROSTRUCTURE, DIELECTRIC AND OPTICAL PROPERTIES OF SINGLE LAYER Ba0.6Sr0.4TiO3 THIN FILM". Surface Review and Letters 21, nr 02 (kwiecień 2014): 1450020. http://dx.doi.org/10.1142/s0218625x14500206.
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Single layered Ba 0.6 Sr 0.4 TiO 3 (BST) thin films were prepared on stainless steel (304) and quartz substrates by solution method. The microstructure, grain size, surface morphology and thickness of the films were reported on the basis of X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM) and UV-visible spectrometer. Variation in thickness influences the microstructure of the films. The single layered thin film had uniform crack-free surface morphology. The low frequency dielectric constants for the films of thicknesses 663, 476 and 451 nm were found to be 1246, 859 and 703, respectively at room temperature. The dielectric loss values for different thicknesses were found to be 0.238%, 0.170% and 0.120% for 100 kHz and 0.043%, 0.029 % and 0.028% for 1 kHz. The dielectric properties changed significantly with thickness of the film as well as with frequency. The tunability of the single layered BST film increased with film thickness. The refractive index, bandgap and thickness of the single layered thin film were calculated by using envelope method and Tauc's relation from the UV-visible transmission spectrum. The bandgap increases with the film thickness. These results show that this single layered film will be a potential material for tunable devices application.
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Xiao, Na, Bo Yang, Fei Fei Du, Yan Wu, Xiang Zhao i Gao Wu Qin. "Hardness and Texture Evolution of Sputtered TiN Thin Films with Different Thicknesses on Ti6Al4V Substrate". Key Engineering Materials 709 (wrzesień 2016): 91–94. http://dx.doi.org/10.4028/www.scientific.net/kem.709.91.
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In this present work, TiN films with various thicknesses (from 0.3 μm to 2 μm) were deposited by DC reactive magnetron sputtering on Ti6Al4V substrates. The evolution of texture and microstructure were studied by X-ray diffraction and Scanning Electron Microscopy, respectively. The XRD characterization indicates that the preferred texture of TiN films is changed from (111) to (100) with increasing the film thickness. The microstructure characterization shows that their microstructure transform from continuous into columnar with increasing the TiN film thickness. It is considered these results are arised from the change of overall energy including surface energy and strain energy with the film thickness. The hardness of TiN film increases with increasing the film thickness.
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Greculeasa, Simona Gabriela, Anda-Elena Stanciu, Aurel Leca, Andrei Kuncser, Luminita Hrib, Cristina Chirila, Iuliana Pasuk i Victor Kuncser. "Influence of Thickness on the Magnetic and Magnetotransport Properties of Epitaxial La0.7Sr0.3MnO3 Films Deposited on STO (0 0 1)". Nanomaterials 11, nr 12 (14.12.2021): 3389. http://dx.doi.org/10.3390/nano11123389.
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Epitaxial La0.7Sr0.3MnO3 films with different thicknesses (9–90 nm) were deposited on SrTiO3 (0 0 1) substrates by pulsed laser deposition. The films have been investigated with respect to morpho-structural, magnetic, and magneto-transport properties, which have been proven to be thickness dependent. Magnetic contributions with different switching mechanisms were evidenced, depending on the perovskite film thickness. The Curie temperature increases with the film thickness. In addition, colossal magnetoresistance effects of up to 29% above room temperature were evidenced and discussed in respect to the magnetic behavior and film thickness.
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He, Li, Chen, Qian, Geng, Bi, Mu, Hou i Chou. "Thickness Dependence of Ferroelectric and Optical Properties in Pb(Zr0.53Ti0.47)O3 Thin Films". Sensors 19, nr 19 (20.09.2019): 4073. http://dx.doi.org/10.3390/s19194073.
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As a promising functional material, ferroelectric Pb(ZrxTi1−x)O3 (PZT) are widely used in many optical and electronic devices. Remarkably, as the film thickness decreases, the materials’ properties deviate gradually from those of solid materials. In this work, multilayered PZT thin films with different thicknesses are fabricated by Sol-Gel technique. The thickness effect on its microstructure, ferroelectric, and optical properties has been studied. It is found that the surface quality and the crystalline structure vary with the film thickness. Moreover, the increasing film thickness results in a significant increase in remnant polarization, due to the interfacial layer effect. Meanwhile, the dielectric loss and tunability are strongly dependent on thickness. In terms of optical properties, the refractive index of PZT films increase with the increasing thickness, and the photorefractive effect are also influenced by the thickness, which could all be related to the film density and photovoltaic effect. Besides, the band gap decreases as the film thickness increases. This work is significant for the application of PZT thin film in optical and optoelectronic devices.
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Kubota, Rurika, Akinori Tateyama, Takahisa Shiraishi, Yoshiharu Ito, Minoru Kurosawa i Hiroshi Funakubo. "Film thickness dependence of ferroelectric properties in polar-axis-oriented epitaxial tetragonal (Bi,K)TiO3 films prepared by hydrothermal method". AIP Advances 12, nr 3 (1.03.2022): 035241. http://dx.doi.org/10.1063/5.0084170.
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Tetragonal (00l)-oriented epitaxial (Bi,K)TiO3 films were grown at 240 °C on (100) cSrRuO3//(100)SrTiO3 substrates by the hydrothermal method. KOH aqueous solutions and Bi(NO3)3 · 5H2O and TiO2 powders were used as the starting materials. Film thickness was controlled from 33 to 1200 nm by changing the deposition time, and the Bi/(Bi+K) ratio in the A-site of perovskite ABO3 was almost constant for all film thicknesses. Polar-axis (00l)-oriented epitaxial (Bi,K)TiO3 films were obtained without a secondary phase and/or other orientation for all thickness ranges. Large ferroelectricity with the remanent polarization ( Pr) of about 84 µC/cm2, comparable to previously reported lead-based ferroelectric films, was observed for (Bi,K)TiO3 films down to 33 nm in thickness. On the other hand, Ec increased with decreasing film thickness, but did not show strong film thickness dependence like other perovskite ferroelectric films. These data are very useful for understanding the degradation mechanism of ferroelectric thin films.
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Kusano, Eiji. "Dependence of film structure on the film structure-independent equivalent film thickness in magnetron sputtering deposition of Ag thin films". Journal of Vacuum Science & Technology A 40, nr 5 (wrzesień 2022): 053405. http://dx.doi.org/10.1116/6.0001989.
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In this work, I have investigated the structures and properties of Ag thin films deposited by magnetron sputtering onto glass substrates with temperatures of 150 and 600 °C for film structure-independent equivalent film thicknesses in the range of 20–400 nm. The Ag thin film morphologies observed using scanning electron microscopy and atomic force microscopy showed the following distinguishable changes: an Ag thin film with an equivalent film thickness of 20 nm deposited at a substrate temperature of 150 °C displayed a film microstructure of oblate grains separated by voids, while those with equivalent film thicknesses of 50 nm or more displayed microstructures consisting of flat-topped grains without any obvious voids between them. In comparison, an Ag thin film with an equivalent film thickness of 20 nm deposited at a substrate temperature of 600 °C displayed a microstructure consisting of isolated spherically shaped grains with a uniform diameter of approximately 40 nm and spaced at uniform intervals; an Ag thin film with an equivalent film thickness of 50 nm displayed a microstructure of more oblate grains; Ag thin films with equivalent film thicknesses of 100 and 200 nm displayed microstructures of highly isolated, flat-topped, mound-shaped grains; and an Ag thin film with an equivalent film thickness of 400 nm displayed a microstructure of continuous flat-topped, mound-shaped grains. In addition, the Ag thin films with equivalent film thicknesses of 20 and 50 nm deposited at 600 °C exhibited higher compressive stresses. The quantitative results of optical-transmittance and electrical resistivity measurements were consistent with the changes in thin film morphology. The morphological structures of the Ag thin films deposited at 600 °C result from the high surface diffusivity of the Ag atoms, which do not wet the glass substrate, whereas the morphologies of the Ag thin films deposited at 150 °C result from in-place grain growth following the formation of multiple nuclei because of the low surface diffusivity of the Ag atoms at this temperature. The observed thin film microstructures are unexplained by the classical structure model for sputter-deposited metal thin films, which does not consider either the high surface diffusivity of adatoms that do not wet the substrate or the increase in surface area required to dissipate the energy accumulating in grains during film deposition. The results obtained in this study provide a fundamental description and explanation of the grain structure of metal thin films with thicknesses of a few tens of nanometers or less.
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Zhang, Weiguang, Jijun Li, Yongming Xing, Xiaomeng Nie, Fengchao Lang, Shiting Yang, Xiaohu Hou i Chunwang Zhao. "Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation". Coatings 11, nr 1 (27.12.2020): 23. http://dx.doi.org/10.3390/coatings11010023.
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SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.
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Khachatryan, Hayk, Sung-Nam Lee, Kyoung-Bo Kim i Moojin Kim. "Deposition of Al Thin Film on Steel Substrate: The Role of Thickness on Crystallization and Grain Growth". Metals 9, nr 1 (21.12.2018): 12. http://dx.doi.org/10.3390/met9010012.
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In this study, we deposited aluminum (Al) films of different thicknesses on steel substrate and examined their phase, microstructure, and film growth process. We estimated that films of up to 30 nm thickness were mainly amorphous in nature. When the film thickness exceeded 30 nm, crystallization was observed. The further increase in film thickness triggered grain growth, and the formation of grains up to 40 nm occurred. In such cases, the Al film had a cross-grained structure with well-developed primary grains networks that were filled with small secondary grains. We demonstrated that the microstructure played a key role in optical properties. The films below 30 nm showed higher specular reflection, whereas thicker films showed higher diffuse reflections.
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Ghorannevis, Zohreh, Marzieh Asadi Milani, Maryam Habibi i Mahmood Ghoranneviss. "Thickness Dependence of Structural and Optical Properties of Al/ZnO Films Prepared by DC Magnetron Sputtering". Advanced Materials Research 856 (grudzień 2013): 193–96. http://dx.doi.org/10.4028/www.scientific.net/amr.856.193.
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In this paper, AZO thin films of different thicknesses were deposited on glass substrates as transparent conducting (TCO) films by changing the deposition time using a DC magnetron sputtering method. The effect of film thicknesses on the structural and optical properties of AZO films was investigated using X-ray diffractometer (XRD) and spectrophotometer, respectively. Results show that increasing the film thickness results in decreasing the optical transmittance. The optimum properties were obtained for a film with 500 nm thickness and 90 min deposition time, which exhibited a transmittance of 95%.
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Peng, Tiefeng, Siyuan Yang, Fan Xiang, Yunpei Liang, Qibin Li, Xuechao Gao i Sanjun Liu. "Film tension of liquid nano-film from molecular modeling". International Journal of Modern Physics B 31, nr 04 (6.02.2017): 1750016. http://dx.doi.org/10.1142/s0217979217500163.
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Due to its geometry simplicity, the forces of thin liquid film are widely investigated and equivalently employed to explore the phys–chemical properties and mechanical stability of many other surfaces or colloid ensembles. The surface tension of bulk liquid ([Formula: see text]) and film tension ([Formula: see text]) are the most important parameters. Considering the insufficiency of detailed interpretation of film tension under micro-scale circumstances, a method for film tension was proposed based on numerical modeling. Assuming surface tension at different slab thicknesses being identical to the surface tension of film, the surface tension and disjoining pressure were subsequently used to evaluate the film tension based on the derivation of film thermodynamics, and a decreasing tendency was discovered for low temperature regions. The influence of saline concentration on nano-films was also investigated, and the comparison of film tensions suggested that higher concentration yielded larger film tension, with stronger decreasing intensity as a function of film thickness. Meanwhile, at thick film range (15–20 nm), film tension of higher concentration film continued to decrease as thickness increase, however it arrived to constant value for that of lower concentration. Finally, it was found that the film tension was almost independent on the film curvature, but varied with the thickness. The approach is applicable to symmetric emulsion films containing surfactants and bi-layer lipid films.
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Křupka, I., M. Hartl i M. Liška. "Influence of Contact Pressure on Central and Minimum Film Thickness Within Ultrathin Film Lubricated Contacts". Journal of Tribology 127, nr 4 (1.07.2005): 890–92. http://dx.doi.org/10.1115/1.2032991.
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Recent numerical results have indicated that the relationship between the film thickness and the speed may not always follow the simple power law, especially under severe conditions. This paper is aimed at obtaining experimental results at high contact stresses and low speeds to study the thin film behavior. Ultrathin lubricant films were observed at maximum Hertz pressures of 0.52, 1.01, and 1.54 GPa by using an optical test rig. Central and minimum film thickness values were obtained with thin film colorimetric interferometry from chromatic interferograms. The nonlinear behavior of both central and minimum film thicknesses in log-log coordinates was observed as rolling speed and thereby film thickness decreased. This tendency became more obvious at higher contact pressures.
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Rezk, Amgad R., Ofer Manor, Leslie Y. Yeo i James R. Friend. "Double flow reversal in thin liquid films driven by megahertz-order surface vibration". Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences 470, nr 2169 (8.09.2014): 20130765. http://dx.doi.org/10.1098/rspa.2013.0765.
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Arising from an interplay between capillary, acoustic and intermolecular forces, surface acoustic waves (SAWs) are observed to drive a unique and curious double flow reversal in the spreading of thin films. With a thickness at or less than the submicrometre viscous penetration depth, the film is seen to advance along the SAW propagation direction, and self-similarly over time t 1/4 in the inertial limit. At intermediate film thicknesses, beyond one-fourth the sound wavelength λ ℓ in the liquid, the spreading direction reverses, and the film propagates against the direction of the SAW propagation. The film reverses yet again, once its depth is further increased beyond one SAW wavelength. An unstable thickness region, between λ ℓ /8 and λ ℓ /4, exists from which regions of the film either rapidly grow in thickness to exceed λ ℓ /4 and move against the SAW propagation, consistent with the intermediate thickness films, whereas other regions decrease in thickness below λ ℓ /8 to conserve mass and move along the SAW propagation direction, consistent with the thin submicrometre films.
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Wang, Naien, Yunfei Zou, Lulu Wang i Li Yu. "Theoretical study on amplifying strong exciton–photon coupling based on surface plasmon in a hybridized perovskite nanowire-metal film-perovskite nanowire structure". Modern Physics Letters B 35, nr 20 (24.05.2021): 2150336. http://dx.doi.org/10.1142/s021798492150336x.
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We theoretically report a strong light–matter interaction in a sandwich structure composed of hybridized inorganic–organic perovskite nanowires, silica (SiO2) films and a silver (Ag) film. Surface plasmon effectively enhances the strong exciton–photon coupling strength of perovskite nanowires, which depends on reduction of effective mode volume and local field enhancement. By calculation, we find that the thicknesses of SiO2 and Ag films can affect the coupling strength. With the suitable thickness of SiO2 (5 nm) and Ag (30 nm) films, Rabi splitting can reach 319 meV, while without an Ag film Rabi splitting is only 270 meV. Furthermore, Rabi splitting shows a negative correlation with SiO2 film thickness within a limited range. Still, it has a nonlinear relation with Ag film thickness because the imaginary part of the effective index for the hybridized mode shows a nonlinear relation with Ag film thickness. Our structure provides suitable parameters for the experiment and has potential application in nano-lasers.
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England, Craig D., Laurie Bechder, Steve Zierer, Lisa Gassaway, Barbara Miner i Steve Bill. "Metal Film Thickness Standards". Advances in X-ray Analysis 39 (1995): 707–12. http://dx.doi.org/10.1154/s0376030800023156.
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Cobalt, titanium and titanium nitride film thickness standards were deposited. All metal film thicknesses were obtained from x-ray reflectivity (XRR) measurement using a conventional powder diffractometer. The cobalt film thicknesses were also thicknesses were also determined from cross-sectional transmission electron microscopy (TEM) images and scanning electron microscope energy dispersive x-ray spectroscopy (SEM/EDXS) data using the recently developed MUFILM measurement technique. The cobalt film thicknesses obtained using MUFILM agreed well with the XRR results. The metal film standards were used to obtain calibration curves for an in-fab XRF system. The cobalt and titanium nitride film thickness standards were also used to adjust the optical constants used for an in-fab ellipsometer.
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Thein Kyaw, Thein, Kyaw Myo Naing i Nyunt Win. "Study on Anodizing Processes for Formation of Nano Porous Aluminum Oxide Thin Films". Advanced Materials Research 236-238 (maj 2011): 3061–64. http://dx.doi.org/10.4028/www.scientific.net/amr.236-238.3061.
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In this paper aluminum oxide thin film was prepared by anodic oxidation in various acid baths such as sulphuric acid, chromic acid and phosphoric acid with different concentrations. The thickness and appearance of the anodized films formed has been compared. The thicknesses of anodic oxide film, coating weight per unit area and coating ratio of anodic oxide film variation were determined with respect to the different electrolyte concentrations by using the thickness determination formula. Sulphuric acid gives the highest thickness aluminum oxide films, in the operation condition of 15% H2SO4solution composition, 15V, 30±2°C, 100 mA, 60 mins.
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Markov, A. B., A. V. Solovyov, E. V. Yakovlev, E. A. Pesterev, V. I. Petrov i M. S. Slobodyan. "Computer simulation of temperature fields in the Cr (film)-Zr (substrate) system during pulsed electron-beam irradiation". Journal of Physics: Conference Series 2064, nr 1 (1.11.2021): 012058. http://dx.doi.org/10.1088/1742-6596/2064/1/012058.
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Abstract The paper presents the results of numerical simulation of the distribution of thermal fields during the formation of Cr-Zr surface alloy using a pulsed low-energy high-current electron beam (LEHCEB). The melting thresholds of the Cr-Zr system for different thicknesses of Cr films were calculated. The melting threshold of the Cr-Zr system increases linearly with increasing Cr film thickness. A linear regression dependency model of the melting threshold on the film thickness is proposed. Evaporation thresholds of the Cr-Zr system for different thicknesses of Cr films were calculated. The evaporation threshold of the Cr-Zr system increases linearly with increasing Cr film thickness. A linear regression dependency model of the evaporation threshold on the film thickness is proposed. The value of the LEHCEB energy density at which the lifetime of the film and substrate are equal is calculated. This value is a maximum value for the effective formation of Cr-Zr. A model of the LEHCEB energy density, at which the lifetime of the film and the substrate are equal, in the form of a third-degree polynomial is proposed.
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Chattopadhyay, Soma, A. R. Teren, Jin-Ha Hwang, T. O. Mason i B. W. Wessels. "Diffuse Phase Transition in Epitaxial BaTiO3 Thin Films". Journal of Materials Research 17, nr 3 (marzec 2002): 669–74. http://dx.doi.org/10.1557/jmr.2002.0095.
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The thickness dependence of the dielectric properties of epitaxial BaTiO3 thin films was investigated for thicknesses ranging from 15 to 320 nm. The films were deposited by low-pressure metalorganic chemical vapor deposition on (100) MgO substrates. The relative dielectric permittivity and the loss tangent values decreased with decreasing thickness. High-temperature dielectric measurements showed that with decreasing film thickness, the ferroelectric-to-paraelectric transition temperature decreased, the relative dielectric permittivity decreased, and the phase transition was diffuse. The c/a ratio also decreased with decreasing film thickness. The observed behavior for epitaxial films of BaTiO3 was attributed to the presence of strain in the films.
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Yeo, Chang-Dong, Andreas A. Polycarpou, James D. Kiely i Yiao-Tee Hsia. "Nanomechanical properties of sub-10 nm carbon film overcoats using the nanoindentation technique". Journal of Materials Research 22, nr 1 (styczeń 2007): 141–51. http://dx.doi.org/10.1557/jmr.2007.0007.
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The hardness and elastic modulus of ultra thin amorphous carbon overcoat (COC) films were measured using a recently developed sub-nm nanoindentation system. The carbon overcoat film thickness was varied to be 2.5 nm, 5 nm, and 10 nm on a glass substrate with a 2 nm titanium interlayer. A very sharp indenting tip, which was a cube corner tip with a radius of 44 nm, was used for the experiments. It was found that the mechanical properties of sub-10 nm film thicknesses can be reliably measured using the sub-nm indentation system and a sharp indenting tip. As the thickness of the carbon overcoat increased, so too did the surface roughness. For all three film thickness samples, the trends of hardness and elastic modulus values with the contact depth are very similar. When the contact depth is smaller than the film thickness, the measured values of hardness and elastic modulus are higher than those of the glass substrate, and gradually decrease and then approach the values of glass substrate. When the contact depth is larger than the film thickness, the measured values approximate those of the glass substrate. The thinner film shows higher values of hardness and elastic modulus near the surface, which indicates that mechanical properties do change with film thickness and that measurements made on thicker films and extrapolated to thinner films may lead to incorrect conclusions.
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Wang, John, i Yu Zhang. "Nanostructured Mesoporous Thick Films of Titania for Dye-Sensitized Solar Cells". Applied Mechanics and Materials 110-116 (październik 2011): 540–46. http://dx.doi.org/10.4028/www.scientific.net/amm.110-116.540.
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For energy harvesting, such as in dye-sensitized solar cells, thick films of nanostructured mesoporous titania are inevitably required. Although various mesoporous thin films, i.e., film thickness below 300 nm, such as those of TiO2 and SiO2, have been widely investigated via a supramolecular templating approach in the past decade, little progress has been made with thick films, i.e., film thickness of at least several micrometers. In order to develop the desperately wanted thick films of mesoporous nanostructure for titania, we have successfully modified the supramolecular templating approach, where the highly crystallized mesoporous titania thick films of varying thicknesses and different morphologies are realized, resulting in the formation of highly ordered body-centered orthorhombic and disordered wormlike mesostructures. The performance of these mesoporous films in dye-sensitized solar cells has been investigated, achieving a maximum efficiency of ~7% at the film thickness of ~6 μm. The highly ordered mesoporous titania film outperforms the disordered counterpart of the same thickness in both short circuit current and efficiency. The improved cell performance of the ordered mesoporous film is shown to arise from the enhanced electron transport in the regularly packed titania network due to the enhanced crystalline grain connectivity.
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Hammad, Abdel-wahab, Vattamkandathil i Ansari. "Growth and Correlation of the Physical and Structural Properties of Hexagonal Nanocrystalline Nickel Oxide Thin Films with Film Thickness". Coatings 9, nr 10 (26.09.2019): 615. http://dx.doi.org/10.3390/coatings9100615.
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This study investigated nonstoichiometric nickel oxide thin films prepared via the DC-sputtering technique at different film thicknesses. The prepared films were characterized by a surface profiler for thickness measurement, X-ray diffraction (XRD) for film nature, atomic force microscopy (AFM) for film morphology and roughness, UV-visible-near infrared (UV-vis.-NIR) spectroscopy for optical transmittance spectra of the films, and the photoluminescence (PL) spectra of the prepared films were obtained. The measured film thickness increased from 150 to 503 nm as the deposition time increased. XRD detected the trigonal crystal system of NiO0.96. The crystallite sizes were mainly grown through (101) and (110) characteristic planes. NiO0.96 films have a spherical particle shape and their sizes decreases as the film thickness increased. The optical band gap values decrease from 3.817 to 3.663 eV when the film thickness increases. The refractive index was estimated from the Moss relation, while the high-frequency dielectric constant and the static dielectric constant were deduced from the empirical Adachi formula. The photoluminescence behavior of the studied films confirmed the photogeneration of an electron-hole in nickel and oxygen vacancies. Hence, this study confirms the presence of nickel oxide lattice in the hexagonal structure containing the defects originated from the nickel vacancies or the excess of oxygen.
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Vakaliuk, I. V., R. S. Yavorskiy, L. I. Nykyruy, B. P. Naidych i Ya S. Yavorskyy. "Morphology and optical properties of CdS thin films prepared by Physical Vapor Deposition method". Physics and Chemistry of Solid State 23, nr 4 (15.12.2022): 669–77. http://dx.doi.org/10.15330/pcss.23.4.669-677.
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The optical properties of cadmium sulfide thin films obtained by thermal evaporation in vacuum were studied. The stoichiometric compositions of the binary compound previously synthesized from high-purity powders of the initial components were used. Films of different thicknesses deposited on a glass substrate were investigated using scanning electron microscopy and absorption coefficient was defined by the Swanepoel method. It was found that with increasing film thickness, surface formations decrease and at a thickness of 1 μm the film surface is continuous. It is determined that thin films of cadmium sulfide have optimal optical parameters for use as photovoltaic buffer layer. All the obtained films except the film with a thickness of 1215 nm show the usual interference pattern in the reflection spectra.
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Martínez-Miranda, L. J., J. J. Santiago-Avilés, W. R. Graham, P. A. Heiney i M. P. Siegal. "X-ray structural studies of epitaxial yttrium silicide on Si(111)". Journal of Materials Research 9, nr 6 (czerwiec 1994): 1434–40. http://dx.doi.org/10.1557/jmr.1994.1434.
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We performed a series of glancing angle and reflection x-ray diffraction experiments to study both the in-plane and out-of-plane structure of epitaxial YSi2−x films grown on Si(111), with thicknesses ranging from 85 Å to 510 Å. These measurements allowed us to characterize the mean film lattice constants, the position correlation lengths of the film, and the presence and extent of strain as a function of film thickness. We find that the strain along the basal plane increases as a function of increasing thickness to approximately 1% in the 510 Å film; the corresponding out-of-plane strain is such that the film unit cell volume increases as a function of thickness. The corresponding in-plane microscopic strain varies from 0.5% for the 85 Å film to 0.3% for the 510 Å film. We relate our results to the mode of film growth and the presence of pinholes in the films.
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Tank, Tejas M., Chetan M. Thaker i J. A. Bhalodia. "Structural Transition in Thickness Dependent CSD Grown Nanostructure Manganite Thin Films". Advanced Materials Research 1047 (październik 2014): 131–39. http://dx.doi.org/10.4028/www.scientific.net/amr.1047.131.
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In this report, manganite thin films of La0.7Sr0.3MnO3(LSMO) of various thicknesses are carried out by using Chemical Solution Deposition (CSD) technique on(100)– oriented single crystalline LaAlO3(LAO) substrate. Desired film thickness was achieved via control of the number of deposition sequences. X-ray diffraction (XRD) study shows that 1stand 3rdcoatings of LSMO films have the cubic structure while 5thand 7thcoatings of LSMO films have hexagonal structure. As the film thickness increases, increase in lattice parameter(c)was observed. Surface morphological study was carried out using Atomic Force Microscopy (AFM). RMS roughness and grain size were found to increase with the thickness. It is interesting and noticeable that the structural transition occurs from cubic to hexagonal are clearly observed through XRD and AFM results. In electrical resistivity measurement, show the resistivity of all the samples decreases as the film thickness or grain size increases, but the trend inverts for the film with 7 coatings and the maximum MR with the value of 21.35 %, in Hexagonal structure.
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Sánchez-Dena, Oswaldo, Susana Hernández-López, Marco Antonio Camacho-López, Pedro Estanislao Acuña-Ávila, Jorge Alejandro Reyes-Esqueda i Enrique Vigueras-Santiago. "ZnO Films from Thermal Oxidation of Zn Films: Effect of the Thickness of the Precursor Films on the Structural, Morphological, and Optical Properties of the Products". Crystals 12, nr 4 (10.04.2022): 528. http://dx.doi.org/10.3390/cryst12040528.
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Zinc oxide (ZnO) films with different structural, morphological, and optical properties were obtained by (fixed) thermal oxidation of deposited metallic zinc (Zn) films. The main characteristics of the oxidized films are discussed in terms of the Zn film thickness. On-axis preferential crystallographic oriented growth of ZnO can be tuned based on the control of the thickness of the deposited Zn: c-axis (a-axis) for the thinnest (thicker) Zn film. The thicker ZnO film is rather a-textured, whereas the grains hosted by the ZnO films corresponding to the Zn films of intermediate thicknesses are more randomly oriented. For Zn films of ever-increasing thickness, a tendency towards the crystallization of larger ZnO nanocrystals holds, combined with a continuous increment on the surface roughness. In contrast, the fundamental bandgap of the resultant oxide-based films decreases with thickness. The roughness of the ZnO films is not directly measured. It is qualitatively described by the analysis of Zn-film micrographs obtained by Scanning Electron Microscopy and by the demonstration of strong optical scattering interactions present in the thicker ZnO films by their random lasing activity.
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Lansåker, Pia C., Klas Gunnarsson, Arne Roos, Gunnar A. Niklasson i Claes Goran Granqvist. "Au-Based Transparent Conductors for Window Applications: Effect of Substrate Material". Advances in Science and Technology 75 (październik 2010): 25–30. http://dx.doi.org/10.4028/www.scientific.net/ast.75.25.
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Thin films of Au were made by sputter deposition onto glass substrates with and without transparent and electrically conducting layers of SnO2:In. The Au films were up to ~11 nm in thickness and covered the range for thin film growth from discrete islands, via large scale coalescence and formation of a meandering conducting network, to the formation of a more or less “holey” film. Scanning electron microscopy and atomic force microscopy showed that the SnO2:In films were considerably rougher than the glass itself. This roughness influenced the Au film formation so that large scale coalescence set in at a somewhat larger thickness for films on SnO2:In than on glass. Measurements of spectral optical transmittance and electrical resistance could be reconciled with impeded Au film formation on the SnO2:In layer, leading to pronounced “plateaus” in the near infrared optical properties for Au films on SnO2:In and an accompanying change from such two-layer films having a lower resistance than the single gold film at thicknesses below large scale coalescence to the opposite behavior for larger film thicknesses.
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Zhao, Minglin, Jie Lian, Zhaozong Sun, Xiao Wang, Wenfu Zhang, Juanjuan Hu i Mengmeng Li. "Optical characterization of TiAlON-based film used for solar energy". Modern Physics Letters B 28, nr 25 (24.09.2014): 1450196. http://dx.doi.org/10.1142/s0217984914501966.
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Optical characterization of TiAlON film applied in solar energy is presented in this paper. TiAlON -based films with different thicknesses have been deposited by magnetron sputtering. The spectrophotometer and spectroscopic ellipsometry (GES5) have been used to study the samples. Surface morphology and component of the films were investigated using scanning electron microscope (SEM), X-ray diffraction (XRD), atomic force microscope (AFM) and X-ray photoelectron spectroscopy (XPS). The optical constants and film thicknesses of TiAlON films with different thicknesses have been obtained by theoretical modeling analysis fitting (Cauchy model) and point-to-point analysis fitting. Results show that the refraction coefficient and extinction coefficient change with the film thickness increased. Those optical properties are useful for selecting the layers with adequate optical constants and thickness to design a solar selective absorber.
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He, Xi Yun, Ai Li Ding, Yong Zhang, Zi Ping Cao i Ping Sun Qiu. "Influence of Film Thickness on Optical Properties of PLZT Thin Films Derived from MOD Method". Key Engineering Materials 280-283 (luty 2007): 231–34. http://dx.doi.org/10.4028/www.scientific.net/kem.280-283.231.
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PLZT (9/65/35) thin films on sapphire (001) substrates with thickness of 0.1 ~ 0.9 µm were prepared by a metal-organic decomposition (MOD) process. All the films present highly (110)-preferred orientation independent of the film thickness. The microstructure of the films was investigated. The influence of film thickness on optical properties of PLZT films was examined and analyzed. As the film thickness is increased, the absorption edge of the film is shifted to longer wavelength; the optical band gap Eg is increased slightly. The refractive index at 510nm determined from optical transmission spectra also shows an increasing tendency as film thickness increasing. Great stress aggregated during the film preparing process is thought to be an important reason which results in the variations of optical properties of the films with different thickness.
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Liu, Huaiyuan, Donglin Ma, Yantao Li, Lina You i Yongxiang Leng. "Evolution of the Shadow Effect with Film Thickness and Substrate Conductivity on a Hemispherical Workpiece during Magnetron Sputtering". Metals 13, nr 1 (13.01.2023): 165. http://dx.doi.org/10.3390/met13010165.
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When depositing films on a complex workpiece surface by magnetron sputtering, the shadow effect occurs and causes the columnar structure to tilt toward the substrate owing to the oblique incident angle of the plasma flux, affecting the microstructure and properties of the films. Improving the surface diffusion could alleviate the shadow effect, whereas changing the energy of the deposited particles could improve surface diffusion. Different substrate conductivities could affect the energy of the deposited particles when they reach the substrate. In this study, Si (semiconductor) and SiO2 (insulator) sheets are mounted on the inner surface of a hemispherical workpiece, and Ti films with different thicknesses (adjusted by the deposition time) are deposited on the inner surface of the hemispherical workpiece by direct current magnetron sputtering. The results show that there is a threshold thickness and incident angle before the films are affected by the shadow effect. The threshold could be affected by the film thickness, the incident angle, and the conductivity of the substrate. The threshold would decrease as the film thickness or incidence angle increased or the conductivity of the substrate decreased. When the film thickness or incident angle does not reach the threshold, the film would not be affected by the shadow effect. In addition, the film deposited later would tilt the vertical columnar structure of the film deposited earlier. Owing to the different conductivities, the shadow effect manifest earlier for Ti films deposited on the insulator SiO2 than for films deposited on the semiconductor Si when the film thickness is >500 nm.
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Leca, Minodora, i Ovidiu Segarceanu. "INFLUENCE OF FILM THICKNESS, TEMPERATURE AND INORGANIC FILLERS ON THE VOLUME ELECTRIC RESISTIVITY OF HEAT-CURING EPOXY VARNISH". SOUTHERN BRAZILIAN JOURNAL OF CHEMISTRY 1, nr 1 (20.12.1993): 97–105. http://dx.doi.org/10.48141/sbjchem.v1.n1.1993.100_1993.pdf.
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The dependence of the volume electric resistivity of heat-during epoxy varnish on the film thickness, temperature, and nature of inorganic fillers for films obtained by spraying on steel supports cured for 30 minutes at l60 °C was determined. Film thicknesses ranged between 5 and 56 µm, temperature between 24 °C and l40 °C, and the fillers were rutile type titanium micronizes mica, colloidal aluminium oxide, and aluminium silicate. The experimental data, treated statistically by the Linear regression method, shows a linear dependence of the volume electric resistivity on the film thickness and a hyperbolic one on temperature. The highest volume electric resistivity was obtained for films containing titanium dioxide and the lowest one for those with aluminum silicate. The volume electric resistivity depends on film thickness for films deposited from the solution and can not be considered a material constant.
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HUANG, A., S. Y. TAN i S. R. SHANNIGRAHI. "THICKNESS EFFECTS ON THE EPITAXIAL NATURE OF THE SINGLE-PHASE MULTIFERROIC THIN FILMS". International Journal of Nanoscience 08, nr 01n02 (luty 2009): 81–85. http://dx.doi.org/10.1142/s0219581x09005992.
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Multiferroic Bi 0.95 La 0.05 Fe 0.7 Sc 0.3 O 3 (BLFS) thin films with different thicknesses have been prepared on (1 0 0) LaAlO 3 (LAO) substrates using a sol–gel process and annealed in N 2 ambient at 650°C for 5 min. From the X-ray diffraction (XRD) analysis, it was observed that BLFS thin films had (h 0 0)-preferred orientation for the film thickness 63, 125, 186, and 240 nm and became isotropic thereafter. The films developed in-plane epitaxial growth with respect to the substrate. The surface morphology became denser and the surface roughness increased as thickness increased up to 241 nm. The highest dielectric constant observed for the 241 nm thick BLFS film too. No prominent of the leakage current density observed for the film thickness up to 241 nm. However, two fold increase in the leakage current density observed for the film thickness 382 nm. For the BLFS films with thickness 241 nm, we observed the highest dielectric constant (ε) value of 1675 and remnant polarization (Pr) polarization value of 52 μC/cm2 using a sol–gel spin coating process.
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Lv, Jing, i Sheng Ni Zhang. "Effect of Thicknesses on the Optical and Electrical Properties of Ag Films on PET Substrates". Advanced Materials Research 79-82 (sierpień 2009): 655–58. http://dx.doi.org/10.4028/www.scientific.net/amr.79-82.655.
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A series of Ag films with different thicknesses were prepared on polyethylene terephthalate (PET) substrates under identical conditions by thermal evaporation. The effect of the thickness on the optical and electrical properties of the films was studied. The morphology of the samples was investigated by atomic force microscopy (AFM). The optical and electrical properties were measured by spectrophotometer and four-point probe method, respectively. The experimental results show that the reflectance increases, while transmittance and resistivity decrease with the increase of the thickness. There exists a critical thickness of the film and it is 75 nm in this experiment. The optical and electrical properties of Ag films on PET substrates with thickness larger than critical thickness, are close to those of the conventional bulk silver. The resistivity of the 150-nm film is 3.0±0.2 μΩ•cm, which is lower than that of the 250-nm Ag film grown on BK-7 glass substrates.
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Yu, Cheng-Chang, Wen-How Lan i Kai-Feng Huang. "Indium-Nitrogen Codoped Zinc Oxide Thin Film Deposited by Ultrasonic Spray Pyrolysis on n-(111) Si Substrate: The Effect of Film Thickness". Journal of Nanomaterials 2014 (2014): 1–7. http://dx.doi.org/10.1155/2014/861234.
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Indium-nitrogen codoped zinc oxide (INZO) thin films were fabricated by spray pyrolysis deposition technique on n-(111) Si substrate with different film thicknesses at 450°C using a precursor containing zinc acetate, ammonium acetate, and indium nitrate with 1 : 3 : 0.05 at.% concentration. The morphology and structure studies were carried out by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The grain size of the films increased when increasing the film thickness. From XRD spectra, polycrystalline ZnO structure can be observed and the preferred orientation behavior varied from (002) to (101) as the film thickness increased. The concentration and mobility were investigated by Hall effect measurement. the p-type films with a hole mobility around 3 cm2V−1s−1and hole concentration around3×1019 cm−3can be achieved with film thickness less than 385 nm. The n-type conduction with concentration1×1020 cm−3is observed for film with thickness 1089 nm. The defect states were characterized by photoluminescence. With temperature-dependent conductivity analysis, acceptor state with activation energy 0.139 eV dominate the p type conduction for thin INZO film. And the Zn-related shallow donors with activation energy 0.029 eV dominate the n-type conduction for the thick INZO film.
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El Zawawi, I. K., Manal A. Mahdy i E. A. El-Sayad. "Influence of Film Thickness and Heat Treatment on the Physical Properties of Mn Doped Sb2Se3 Nanocrystalline Thin Films". Journal of Nanomaterials 2017 (2017): 1–14. http://dx.doi.org/10.1155/2017/7509098.
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Nanocrystalline thin films of Sb37.07Mn1.95Se60.98 with different thickness (7, 20, 40, and 80 nm) were successfully prepared via inert gas condensation technique. As-deposited films showed amorphous structure by grazing incident in-plane X-ray diffraction (GIIXD) technique. All films of different thicknesses were heat treated at 433 K for 90 min. The GIIXD pattern of annealed films showed nanocrystalline orthorhombic structure. The effect of thickness of annealed films on the structure and optical properties was studied. Calculated particle sizes are 20.67 and 24.15 for 40 and 80 nm thickness of heat treated film. High resolution transmission electron microscope HRTEM images and their diffraction patterns proved that 40 nm film thickness annealed at different temperature has nanocrystalline nature with observed (high) crystallinity that increases with annealing temperature. Blue shift of optical energy gap was observed from 1.68 to 2 eV with decreasing film thickness from 80 to 7 nm. Film thickness of 40 nm was exposed to different heat treated temperatures from 353 to 473 K to detect its effect on structure and optical and electrical properties. Blue shift from 1.73 to 1.9 eV was observed in its optical band gap due to direct transition as heat treatment temperature decreasing from 473 to 353 K. Electrical conductivity was studied for different heat treated films of thickness 40 nm, and intrinsic conduction mechanism is dominant. The activation energy Ea was affected by heat treatment process.
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Liu, Xiaoyan, Lei Wang i Yi Tong. "Optoelectronic Properties of Ultrathin Indium Tin Oxide Films: A First-Principle Study". Crystals 11, nr 1 (30.12.2020): 30. http://dx.doi.org/10.3390/cryst11010030.
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First-principle density functional theory simulations have been performed to predict the electronic structures and optoelectronic properties of ultrathin indium tin oxide (ITO) films, having different thicknesses and temperatures. Our results and analysis led us to predict that the physical properties of ultrathin films of ITO have a direct relation with film thickness rather than temperature. Moreover, we found that a thin film of ITO (1 nm thickness) has a larger absorption coefficient, lower reflectivity, and higher transmittance in the visible light region compared with that of 2 and 3 nm thick ITO films. We suggest that this might be due to the stronger surface strain effect in 1 nm thick ITO film. On the other hand, all three thin films produce similar optical spectra. Finally, excellent agreement was found between the calculated electrical resistivities of the ultrathin film of ITO and that of its experimental data. It is concluded that the electrical resistivities reduce along with the increase in film thickness of ITO because of the short strain length and limited bandgap distributions.
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Lee, Sang Wook, Hyun Suk Jung, Dong Wook Kim i Kug Sun Hong. "Correlation of Thickness with the Photocatalytic Characteristic of TiO2 Thin Films". Materials Science Forum 486-487 (czerwiec 2005): 65–68. http://dx.doi.org/10.4028/www.scientific.net/msf.486-487.65.
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5, 10, and 30 nm thickness of transparent TiO2 thin films were fabricated using sol-gel process, and the influence of film thickness on the photocatalytic property was investigated. The increase in film thickness was found to enhance the photocatalytic property of the films. Photocatalytic properties of each film were estimated by decomposition of stearic acid. The amount of decomposed stearic acid increased with film thickness (5 - 30 nm). For the case of 30 nm thickness film, the stearic acid was decomposed perfectly in twelve minutes. UV-vis spectra and photocurrents of each film clearly showed that the photoactivities of TiO2 films were related to the amount of absorbed UV light and band gap shift.
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Hasan, Bushra A. "Electrical and morphological study of thermally evaporated (Sb2S3)1-xSnx thin films". Iraqi Journal of Physics (IJP) 13, nr 26 (10.02.2019): 42–50. http://dx.doi.org/10.30723/ijp.v13i26.282.
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(Sb2S3)1-xSnx thin films with different concentrations (0, 0.05 and0.15) and thicknesses (300,500 and 700nm) have been deposited bysingle source vacuum thermal evaporation onto glass substrates atambient temperature to study the effect of tin content, thickness andon its structural morphology, and electrical properties. AFM studyrevealed that microstructure parameters such as crystallite size, androughness found to depend upon deposition conditions. The DCconductivity of the vacuum evaporated (Sb2S3)1-x Snx thin films wasmeasured in the temperature range (293-473)K and was found toincrease on order of magnitude with increase of thickness, and tincontent. The plot of conductivity with reciprocal temperaturesuggests, there are three activation energies Ea1, Ea2 and Ea3 for(Sb2S3)1-x Snx for all x content values and thicknesses whichdecreases with increasing tin content and thickness. Hall effectmeasurement showed that low thickness (Sb2S3)1-x Snx film exhibitn-type conductance whereas the film exhibit p-type towards thehigher thickness. The electric carrier concentration and mobilityshow opposite dependence upon tin content and thickness.
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Malikov, Vladimir N., Nikolay D. Tihonskii i Alexey V. Ishkov. "Thin Ni/Al Metal Films Characterization Using a High-Frequency Electromagnetic Field". Key Engineering Materials 910 (15.02.2022): 893–901. http://dx.doi.org/10.4028/p-digld4.
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The paper presents methods of obtaining and studying new materials - thin metal films of the Ni/Al system. The technique and main parameters of the resistive method of thermal evaporation of the alloy using a vacuum universal station are briefly presented. Samples of thin films of various thicknesses were obtained. The thickness of the material was determined both using a scanning electron microscope and a developed eddy-current gage system operating under a hardware-software complex. In the course of the research, the limit the film thickness gauging capabilities of the developed gage system was established (400 nm). The ability of the gage system to detect differences in the thickness of the same film was shown using the developed method. Also, the possibility of determining the thickness of an undoubtedly unknown thin film by an eddy-current transducer signal amplitude has been demonstrated.
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Tunmee, Sarayut, Ratchadaporn Supruangnet, Hideki Nakajima, XiaoLong Zhou, Satoru Arakawa, Tsuneo Suzuki, Kazuhiro Kanda, Haruhiko Ito, Keiji Komatsu i Hidetoshi Saitoh. "Study of Synchrotron Radiation Near-Edge X-Ray Absorption Fine-Structure of Amorphous Hydrogenated Carbon Films at Various Thicknesses". Journal of Nanomaterials 2015 (2015): 1–7. http://dx.doi.org/10.1155/2015/276790.
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The compositions and bonding states of the amorphous hydrogenated carbon films at various thicknesses were evaluated via near-edge X-ray absorption fine-structure (NEXAFS) and elastic recoil detection analysis combined with Rutherford backscattering spectrometry. The absolute carbonsp2contents were determined to decrease to 65% from 73%, while the hydrogen contents increase from 26 to 33 at.% as the film thickness increases. In addition, as the film thickness increases, theπ⁎(C=C),σ⁎(C–H),σ⁎(C=C), andσ⁎(C≡C) bonding states were found to increase, whereas theπ⁎(C≡C) andσ⁎(C–C) bonding states were observed to decrease in the NEXAFS spectra. Consequently, the film thickness is a key factor to evaluate the composition and bonding state of the films.
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Yuan, Chang Kun. "Preparation of ZnO:Zr Thin Films by Sputtering Zn:Zr Targets". Advanced Materials Research 549 (lipiec 2012): 331–34. http://dx.doi.org/10.4028/www.scientific.net/amr.549.331.
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Transparent conductive ZnO:Zr thin films with different thicknesses were fabricated on glass slides by DC reactive magnetron sputtering from Zn:Zr targets consisting of Zn disk and Zr metallic chips in Ar+O2mixture gas. X-ray diffraction, four-point probe measurements, UV–vis spectrophotometers and thin film thickness tester were employed to characterize the structure, electrical and optical properties of ZnO:Zr films, respectively. The experimental investigations indicate that film thickness has an important effect on the crystal structure, optical and electrical properties of the deposited films.
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Faraj, M. G., i K. Ibrahim. "Optical and Structural Properties of Thermally Evaporated Zinc Oxide Thin Films on Polyethylene Terephthalate Substrates". International Journal of Polymer Science 2011 (2011): 1–4. http://dx.doi.org/10.1155/2011/302843.
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Zinc oxide thin films of different thicknesses ranging from 100 to 300 nm were prepared on polyethylene terephthalate substrates with thermal evaporation in a vacuum of approximately3×10-5Torr. X-ray diffraction patterns confirm the proper phase formation of the material. From atomic force microscopy (AFM) images, it was found that the root mean square roughness of the film surface increased as the film thickness increased. The optical properties of ZnO on PET substrates were determined through the optical transmission method using an ultraviolet-visible spectrophotometer. The optical band gap values of ZnO thin films slightly decreased as the film thickness increased.
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Zhou, Jiali, Xuan Zhang, Xiaofeng Zhang, Wenqiao Zhang, Jiuyong Li, Yuandong Chen, Hongyan Liu i Yue Yan. "Mechanical Properties of Tensile Cracking in Indium Tin Oxide Films on Polycarbonate Substrates". Coatings 12, nr 4 (17.04.2022): 538. http://dx.doi.org/10.3390/coatings12040538.
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The electro-mechanical behaviors of transparent conductive oxide film on polymer substrate are of great concern because they would greatly affect the stability and lifespan of the corresponding devices. In this paper, indium tin oxide (ITO) films with different thicknesses were deposited on a polycarbonate (PC) sheet; meanwhile, in situ electrical resistance, in situ scanning electron microscopy and profilometry were employed to record the electrical resistance, morphologies and residual stress in order to investigate the fracture behavior and electrical-mechanical properties of ITO films under uniaxial tension loading. The electrical resistance changes, crack initiation, crack propagation and crack density evolution of ITO films were systematically characterized by in situ tests. Three fracture stages of ITO films were summarized: Ⅰ crack initiation, Ⅱ crack propagation, Ⅲ crack saturation and delamination. The crack initiation and electrical failure in a thinner ITO film occurred at relatively higher applied tensile strain; namely, the ductility of the film decreased as the film thickness increased. Residual compressive stress was recorded in the ITO films deposited on PC at room temperature and increased as the film thickness increased. Intrinsic crack initiation strain (CIS*) showed an opposite thickness dependence to residual strain (εr); the increase in residual compressive strain was counteracted by the decrease of intrinsic cohesion, leading to an overall decrease in effective crack initiation strain (CIS) when the film thickness increased. In addition, integrated with a formulated mechanics model and the analysis of the three fracture stages under tension, the fracture toughness and interfacial shear strength were quantitatively determined. As the film thickness increased (in the range of 50~500 nm), the fracture toughness decreased and the films were more prone to crack, whereas the interfacial shear strength increased and the films were less likely to delaminate.
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Tagawa, Norio, Noritaka Yoshioka i Atsunobu Mori. "Effect of Ultra-Thin Liquid Lubricant Films on Dynamics of Nano-Spacing Flying Head Sliders in Hard Disk Drives". Journal of Tribology 126, nr 3 (28.06.2004): 565–72. http://dx.doi.org/10.1115/1.1739409.
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This paper describes the effect of ultra-thin liquid lubricant films on air bearing dynamics and flyability of nano-spacing flying head sliders in hard disk drives. The dynamics of a slider was monitored using Acoustic Emission (AE) and Laser Doppler Vibrometer (LDV). The disks with lubricant on one half of disk surface thicker than the other half as well as with uniform thickness lubricant were used to investigate the interactions between the slider and lubricant film experimentally. As a result, it was found that the flying height at which the slider-lubricant contact occurs depends on the lubricant film thickness and it increases as the lubricant film thickness increases. Its flying height is also dependent on the mobile lubricant film thickness under the condition that the total lubricant film thicknesses are the same and the lubricant bonded ratios are different. It increases as the mobile lubricant film thickness increases. The slider-lubricant contact flying height based on the theory for capillary waves is in good agreement with the experimental results. Regard to air bearing dynamics due to the slider-lubricant interactions, it also depends on the mobile lubricant thickness as well as the total lubricant film thickness. However, we should carry out more experimental and theoretical studies in order to confirm and verify these experimental results. In addition, the effect of nonuniform lubricant film thickness on head/disk interface dynamics has been studied. It was found that the lubricant film thickness nonuniformity caused by the slider-lubricant interactions could be observed.
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Zhang, Lei, Man Li, Hai Jian Li i Xin Song. "Measurement of Multilayer Film Thickness Using X-Ray Fluorescence Spectrometer". Key Engineering Materials 726 (styczeń 2017): 85–89. http://dx.doi.org/10.4028/www.scientific.net/kem.726.85.
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Energy dispersive X-ray fluorescence spectrometry (EDXRF) allows a rapid determination of the concentration of elemental constituents or the thickness of thin film, it has been widely used in the industry of thin film thickness. But for multilayer film, especially the middle layer, with the absorption and enhance effect of other layers, the thickness and intensity of the middle layer is not a linear relationship. This paper reports a quantitative analysis of multilayer film thicknesses based on the use of EDXRF and fundamental parameters method. The thickness of multilayer film can be easily determined with the CTCFP software because it requires a minimum number of pure elementals only. Analysis of double-layer thin films using the CTCFP software shows that the inter-element and inter-layer X-ray absorptions and enhancements in a specimen have been determined properly. Results obtained on the standards confirmed the accuracy of the method.
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Biasotto, Glenda, Francisco Moura, Cesar Foschini, Elson Longo, Jose Varela i Alexandre Simões. "Thickness-dependent piezoelectric behaviour and dielectric properties of lanthanum modified BiFeo3 thin films". Processing and Application of Ceramics 5, nr 1 (2011): 31–39. http://dx.doi.org/10.2298/pac1101031b.
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Bi0.85La0.15FeO3 (BLFO) thin films were deposited on Pt(111)/Ti/SiO2 /Si substrates by the soft chemical method. Films with thicknesses ranging from 140 to 280 nm were grown on platinum coated silicon substrates at 500?C for 2 hours. The X-ray diffraction analysis of BLFO films evidenced a hexagonal structure over the entire thickness range investigated. The grain size of the film changes as the number of the layers increases, indicating thickness dependence. It is found that the piezoelectric response is strongly influenced by the film thickness. It is shown that the properties of BiFeO3 thin films, such as lattice parameter, dielectric permittivity, piezoeletric coefficient etc., are functions of mis?t strains.
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Muralter, Fabian, Alberto Perrotta i Anna Maria Coclite. "Thickness-Dependent Swelling Behavior of Vapor-Deposited Hydrogel Thin Films". Proceedings 2, nr 13 (3.12.2018): 757. http://dx.doi.org/10.3390/proceedings2130757.
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Hydrogel thin films containing temperature sensitive chemical functionalities (such as N-isopropylacrylamide, NIPAAm) are particularly interesting for sensor and actuator setups. Complex 3D structures can be conformally coated by the solvent free technique initiated Chemical Vapor Deposition, with precise control over chemical composition and film thickness. In this study, NIPAAm-based thin films with film thicknesses ranging from tens to several hundreds of nanometers and with different amounts of cross-linking were deposited. Above the lower critical solution temperature (LCST), these films repel out water and hence shrink. The amount of cross-linking and the deposited film thickness were successfully identified to both affect shape and position of the LCST transition of these systems: a promising basis for tuning response properties.
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Agustina, E. B., Y. Iriani, D. K. Sandi i R. Suryana. "Influence of film thickness on microstructure and optical properties of Bismuth Ferrite (BFO) for photovoltaic application". Journal of Physics: Conference Series 2190, nr 1 (1.03.2022): 012040. http://dx.doi.org/10.1088/1742-6596/2190/1/012040.
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Abstract Bismuth Ferrite (BFO) film with a low bandgap value is a promising candidate for photovoltaic applications. This study discussed the effects of film thickness on the microstructure and optical properties of BFO films. BFO films were deposited on the Quartz-Silicon substrates using the chemical solution deposition (CSD) method. The thickness variation was conducted by varying the deposited layer number which correspond to the thickness values of 252 and 405 nm, respectively. The XRD analysis showed that increasing of films thickness had no significant effect on the crystal structure. It revealed that the XRD peak intensities increase, however, the lattice parameters, crystallite size, and crystallinity are relatively in the close values as the increasing films thickness. The Scanning Electron Microscopy (SEM) analysis exhibited the larger grain size of the BFO films with the increasing films thickness. According to the UV-Vis spectrophotometer results, the bandgap values reduced from 2.48 eV to 2.5 eV as the thicker film. Finally, The I-V curve presented that the higher films thickness induced the higher efficiency of the BFO film from 0.97 % to 2.1%. The BFO film with higher thickness could exhibit the better performance for photovoltaic application.
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Vander, Isaac, R. W. Zuneska i F. J. Cadieu. "Thickness determination of SmCo films on silicon substrates utilizing X-ray diffraction". Powder Diffraction 25, nr 2 (czerwiec 2010): 149–53. http://dx.doi.org/10.1154/1.3392301.
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This paper presents a nondestructive measurement technique for the determination of the film thicknesses of Co and SmCo based magnetic films deposited by sputtering on single-crystal silicon (100) substrates. X-ray diffraction of Cu Kα radiation has been used to measure the intensity of the (400) reflection from bare silicon substrates and as attenuated by sputter coated Co and SmCo based films on Si substrates. A four-axis research diffractometer allowed the substrate orientation to be fine adjusted to maximize the (400) diffraction intensity. The thickness of SmCo based films was in a range from 0.05 to 5 μm. Co film thicknesses on Si could be measured to a few tens of nanometers. The accuracy of the thickness measurements depends on the effective mass attenuation coefficient of the film material. For the materials considered, the thicknesses determined by the X-ray attenuation method agree within at least several percent to values determined by other methods.