Gotowa bibliografia na temat „F noise spectroscopy”
Utwórz poprawne odniesienie w stylach APA, MLA, Chicago, Harvard i wielu innych
Zobacz listy aktualnych artykułów, książek, rozpraw, streszczeń i innych źródeł naukowych na temat „F noise spectroscopy”.
Przycisk „Dodaj do bibliografii” jest dostępny obok każdej pracy w bibliografii. Użyj go – a my automatycznie utworzymy odniesienie bibliograficzne do wybranej pracy w stylu cytowania, którego potrzebujesz: APA, MLA, Harvard, Chicago, Vancouver itp.
Możesz również pobrać pełny tekst publikacji naukowej w formacie „.pdf” i przeczytać adnotację do pracy online, jeśli odpowiednie parametry są dostępne w metadanych.
Artykuły w czasopismach na temat "F noise spectroscopy"
1
Kale, Uma, i Edward Voigtman. "Gated Integration of Transient Signals in 1/f Noise". Applied Spectroscopy 46, nr 11 (listopad 1992): 1636–43. http://dx.doi.org/10.1366/0003702924926916.
Pełny tekst źródłaStreszczenie:
The Mueller optical calculus is used to model common spectrometric experimental schemes. The effects of source and preamplifier noise on the precision of the measurement are investigated, and the effect of gate width variation for gated integration of Gaussian signal peaks in the presence of white or 1/ f type noise is evaluated. The results indicate that, for integration of a transient absorbance signal, the choice of gate width depends upon the type of noise, but not its source. For a transmittance (or emission) type of experiment, both the type and the source of the noise determine the gate width to be used for integration of the signal.
2
Lübbe, Jannis, Matthias Temmen, Philipp Rahe i Michael Reichling. "Noise in NC-AFM measurements with significant tip–sample interaction". Beilstein Journal of Nanotechnology 7 (1.12.2016): 1885–904. http://dx.doi.org/10.3762/bjnano.7.181.
Pełny tekst źródłaStreszczenie:
The frequency shift noise in non-contact atomic force microscopy (NC-AFM) imaging and spectroscopy consists of thermal noise and detection system noise with an additional contribution from amplitude noise if there are significant tip–sample interactions. The total noise power spectral density D Δ f (f m) is, however, not just the sum of these noise contributions. Instead its magnitude and spectral characteristics are determined by the strongly non-linear tip–sample interaction, by the coupling between the amplitude and tip–sample distance control loops of the NC-AFM system as well as by the characteristics of the phase locked loop (PLL) detector used for frequency demodulation. Here, we measure D Δ f (f m) for various NC-AFM parameter settings representing realistic measurement conditions and compare experimental data to simulations based on a model of the NC-AFM system that includes the tip–sample interaction. The good agreement between predicted and measured noise spectra confirms that the model covers the relevant noise contributions and interactions. Results yield a general understanding of noise generation and propagation in the NC-AFM and provide a quantitative prediction of noise for given experimental parameters. We derive strategies for noise-optimised imaging and spectroscopy and outline a full optimisation procedure for the instrumentation and control loops.
3
Achtenberg, Krzysztof, Janusz Mikołajczyk, Zbigniew Bielecki i Jacek Wojtas. "Cross-correlation method for noise measurements of photodetectors used for laser absorption spectroscopy". Bulletin of the Military University of Technology 69, nr 4 (31.12.2020): 73–83. http://dx.doi.org/10.5604/01.3001.0015.3826.
Pełny tekst źródłaStreszczenie:
The paper presents noise measurements of low-resistance photon detectors with a specially developed system. These measurements are significant for many applications. This issue is particularly critical for laser absorption spectroscopy systems to detect trace amounts of gases. In these systems, the detection limit is determined by noise origins, e.g., light source, background, and detector noise and its readout electronics. The use of some specially designed components of the system (low-noise - 3.6 × 10<sub>-19</sub> V<sub>2</sub>/Hz for f >1 kHz) cross-correlation signal processing provides to obtain a measuring floor noise below 10<sub>-18</sub> V<sub>2</sub>/Hz for f > 10 Hz and below 10<sub>-19</sub> V<sub>2</sub>/Hz for f > 1 kHz after ten minutes’ analysis. Measurements of some reference resistors have verified the system’s performance. Finally, the system was also applied to determine the spectral noise density of the II -Type SuperLattice photodetector made of InAs / InAsSb.
4
Stadler, Adam, i Andrzej Dziedzic. "Virtual instruments in low-frequency noise spectroscopy experiments". Facta universitatis - series: Electronics and Energetics 28, nr 1 (2015): 17–28. http://dx.doi.org/10.2298/fuee1501017s.
Pełny tekst źródłaStreszczenie:
Low-frequency noise spectroscopy (LFNS) is an experimental technique to study noise spectra, typically below 10 kHz, as a function of temperature. Results of LFNS may be presented as the ?so-called? noise maps, giving a detailed insight into fluctuating phenomena in electronic devices and materials. The authors show the usefulness of virtual instrument concept in developing and controlling the measurement setup for LFNS experiments. An example of a noise map obtained for polymer thick-film resistors (PTFRs), made of commercial compositions, for temperature range 77 K - 300 K has been shown. The experiments proved that 1/f noise caused by resistance fluctuations is the dominant noise component in the studied samples. However, the obtained noise map revealed also thermally activated noise sources. Furthermore, parameters describing noise properties of resistive materials and components have been introduced and calculated using data from LFNS. The results of the work may be useful for comparison of noise properties of different resistive materials, giving also directions for improvement of thick-film technology in order to manufacture reliable, low-noise and stable PTFRs.
5
Kawahara, Toshio, Satarou Yamaguchi, Yasuhide Ohno, Kenzo Maehashi, Kazuhiko Matsumoto, Shin Mizutani i Kenji Itaka. "Diameter dependence of 1/f noise in carbon nanotube field effect transistors using noise spectroscopy". Applied Surface Science 267 (luty 2013): 101–5. http://dx.doi.org/10.1016/j.apsusc.2012.08.003.
Pełny tekst źródła
6
Monnig, Curtis A., i Gary M. Hieftje. "An Investigation of Noise Amplitude Spectra Produced by a Direct-Current Plasma". Applied Spectroscopy 43, nr 5 (lipiec 1989): 742–46. http://dx.doi.org/10.1366/0003702894202283.
Pełny tekst źródłaStreszczenie:
Noise amplitude spectra for direct-current plasma atomic emission spectrometry (DCP-AES) were acquired. Flicker (1/ f) noise dominates the signal at low frequencies, and white noise prevails at higher frequencies. Broad-band audio-frequency (af) noise was observed in the plasma continuum emission when the nebulizer gas was directed into the discharge. By increasing the electrode-gas flows, it was possible to narrow the frequency range and increase the amplitude of this af noise. The introduction of an easily ionized element into the plasma had little effect on the noise characteristics of the source.
7
Stadler, Adam Witold, Zbigniew Zawiślak, Andrzej Dziedzic i Damian Nowak. "NOISE SPECTROSCOPY OF RESISTIVE COMPONENTS AT ELEVATED TEMPERATURE". Metrology and Measurement Systems 21, nr 1 (1.03.2014): 15–26. http://dx.doi.org/10.2478/mms-2014-0002.
Pełny tekst źródłaStreszczenie:
Abstract Studies of electrical properties, including noise properties, of thick-film resistors prepared from various resistive and conductive materials on LTCC substrates have been described. Experiments have been carried out in the temperature range from 300 K up to 650 K using two methods, i.e. measuring (i) spectra of voltage fluctuations observed on the studied samples and (ii) the current noise index by a standard meter, both at constant temperature and during a temperature sweep with a slow rate. The 1/f noise component caused by resistance fluctuations occurred to be dominant in the entire range of temperature. The dependence of the noise intensity on temperature revealed that a temperature change from 300 K to 650 K causes a rise in magnitude of the noise intensity approximately one order of magnitude. Using the experimental data, the parameters describing noise properties of the used materials have been calculated and compared to the properties of other previously studied thick-film materials.
8
Lebedev, Alexander A., Vitalii V. Kozlovski, Leonid Fursin, Anatoly M. Strel'chuk, Mikhail E. Levinshtein, Pavel A. Ivanov i Alexander V. Zubov. "Impact of Proton Irradiation on Power 4H-SiC MOSFETs". Materials Science Forum 1004 (lipiec 2020): 1074–80. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.1074.
Pełny tekst źródłaStreszczenie:
Impact of 15 MeV proton irradiation on electrical characteristics and low frequency noise has been studied in high-power vertical 4H-SiC MOSFETs of 1.2 kV-class at doses 1012 £ F £ 1014 cm-2. The maximum value of the field-effect mobility µFЕ depends weakly on F up to F = 2×1013 cm-2. At F = 4×1013 cm-2, the character of the µFЕ(Vg) dependence changes radically. The maximum µFЕ decreases approximately threefold. The dose Fcr corresponding to the complete degradation of the device is about 1014 cm-2. It can be estimated as Fcr» he/n0, where he is the electron removal rate and n0 is the initial electron concentration in the drift layer. In the entire frequency range of analysis f, gate voltages, and drain-source biases, the frequency dependence of the current spectral noise density SI(f) follows the law SI ~ 1/f. From the data of noise spectroscopy, the density of traps in the gate oxide Ntv has been estimated. In non-irradiated structures, Ntv » 5.4×1018 cm-3eV-1. At Ф = 6×1013 cm-2, the Ntv value increases to Ntv » 7.2×1019cm-3eV-1. The non-monotonic behavior of the output current Id and the level of low frequency noise on dose F has been demonstrated.
9
Holmberg, Måns, i Nikku Madhusudhan. "Exoplanet spectroscopy with JWST NIRISS: diagnostics and case studies". Monthly Notices of the Royal Astronomical Society 524, nr 1 (4.07.2023): 377–402. http://dx.doi.org/10.1093/mnras/stad1580.
Pełny tekst źródłaStreszczenie:
ABSTRACT The JWST is ushering in a new era in remote sensing of exoplanetary atmospheres. Atmospheric retrievals of exoplanets can be highly sensitive to high-precision JWST data. It is, therefore, imperative to characterize the instruments and noise sources using early observations to enable robust characterization of exoplanetary atmospheres using JWST-quality spectra. This work is a step in that direction, focusing on the Near Infrared Imager and Slitless Spectrograph (NIRISS) Single Object Slitless Spectroscopy (SOSS) instrument mode, with a wavelength coverage of 0.6–2.8 $\mu$m and R ∼ 700. Using a custom-built pipeline, JExoRES, we investigate key diagnostics of NIRISS SOSS with observations of two giant exoplanets, WASP-39 b and WASP-96 b, as case studies. We conduct a detailed evaluation of the different aspects of the data reduction and analysis, including sources of contamination, 1/f noise, and system properties such as limb darkening. The slitless nature of NIRISS SOSS makes it susceptible to contamination due to background sources. We present a method to model and correct for dispersed field stars that can significantly improve the accuracy of the observed spectra. In doing so, we also report an empirically determined throughput function for the instrument. We find significant correlated noise in the derived spectra, which may be attributed to 1/f noise, and discuss its implications for spectral binning. We quantify the covariance matrix that would enable the consideration of correlated noise in atmospheric retrievals. Finally, we conduct a comparative assessment of NIRISS SOSS spectra of WASP-39 b reported using different pipelines and highlight important lessons for exoplanet spectroscopy with JWST NIRISS.
10
Zheng-Chao, Dong. "Spin-Polarized Tunneling Spectroscopy and Shot Noise in Ferromagnet/ f -Wave Superconductor Junctions". Communications in Theoretical Physics 41, nr 5 (15.05.2004): 775–80. http://dx.doi.org/10.1088/0253-6102/41/5/775.
Pełny tekst źródłaRozprawy doktorskie na temat "F noise spectroscopy"
1
Andreev, Alexey. "Šumová spektroskopie detektorů záření". Doctoral thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2008. http://www.nusl.cz/ntk/nusl-233425.
Pełny tekst źródłaStreszczenie:
Kadmium telurid je velmi důležitý materiál jak základního, tak i aplikovaného výzkumu. Je to dáno zejména jeho výhodnými elektronickými, optickými a strukturními vlastnostmi, které ho předurčují pro náročné technické aplikace. Dnes se hlavně používá pro jeho vysoké rozlišení k detekci a X-záření. Hlavní výhodou detektorů na bázi CdTe je, že nepotřebují chlazení a mohou spolehlivě fungovat i při pokojové teplotě. To způsobuje efektivnější interakce fotonů než je tomu u Si nebo jiných polovodičových materiálů. Obsahem této práce byla analýza a interpretace výsledků získaných studiem šumových a transportních charakteristik CdTe vzorků. Měření ukázaly že odpor homogenní části CdTe krystalů mírně klesá při připojení elektrického pole na vzorku. Při změně teploty navíc dochází k odlišné reakci u CdTe typu p a n. Právě těmto efektům je v práci věnována pozornost. Pomocí šumové spektroskopie bylo zjištěno, že při nízkých frekvencích je u vzorků dominantní šum typu 1/f, zatímco při vyšších frekvencích je sledován generačně-rekombinační šum a tepelný šum. Všechny měřené vzorky vykazovaly mnohem vyšší hodnotu šumu na nízkých frekvencích než udává Hoogeova rovnice. Byly nalezeny a popsány zdroje nadbytečného šumu.
2
Hassis, Wala. "Etude de structures avancées pour la détection IR quantique à haute température". Thesis, Grenoble, 2014. http://www.theses.fr/2014GRENY013/document.
Pełny tekst źródłaStreszczenie:
La détection IR quantique met classiquement en jeu l'absorption de photons dans le matériau semi-conducteur II-VI CdHgTe. Cet alliage présente la particularité de permettre un ajustage du gap du semi-conducteur aux longueurs d'onde couvrant toute la gamme IR en jouant simplement sur la composition de l'alliage, ce qui en fait un matériau de choix. Cependant,les petits gaps en jeu ici imposent un refroidissement des plans focaux à des températures généralement cryogéniques (typiquement la centaine de Kelvins). Ce refroidissement représente naturellement une limite importante dans l'exploitation, l'encombrement et le coût de tels détecteurs.Un des grands défis à venir dans le domaine de la détection IR quantique est la détection à plus haute température. Une figure de mérite populaire pour examiner le fonctionnement de ces détecteurs est le courant d'obscurité qui reflète son bruit, dans le cas d'un détecteur limité par le bruit de courant (shot noise). Or, du fait des propriétés électriques du matériau semi-conducteur utilisé, ce courant d'obscurité augmente fortement avec le réchauffement du détecteur et rend son utilisation impossible à haute température. De plus, un autre phénomène apparaît également limiter le fonctionnement de nos photo-détecteurs : à hautes températures apparaît du bruit 1/f dont l'origine n'est pas parfaitement comprise aujourd'hui (matériau bulk ou interfaces, le débats reste ouvert…).Ce travail de thèse a pour objectif de comprendre les phénomènes physique régissant le bruit 1/f dans les photodiodes CdHgTe à travers la variation d'un bon nombre de paramètres physique et géométriques en vue de mettre en évidence la ou les corrélations de ce bruit avec ces variantesThe IR sensor makes quantum conventionally involves the absorption of photons in the semiconductor CdHgTe II -VI material . This alloy has a feature to allow an adjustment of the gap of the semiconductor at wavelengths covering the whole IR range by simply varying the composition of the alloy, which makes it a material of choice . However, small gaps at stake here impose a focal cooling to cryogenic temperatures generally planes ( typically hundred Kelvins ) . This cooling naturally represents an important limitation in the operation , the size and cost of such detectors .One of the great challenges ahead in the field of quantum IR detection is the detection at higher temperatures . A figure of merit for popular review the operation of these sensors is the dark current , which reflects its sound , in the case of a noise-limited current ( shot noise) detector. However, because the electrical properties of the semiconductor material used , the dark current increases sharply with the heating of the detector and makes it impossible to use at high temperature . In addition, another phenomenon also appears to limit the functionality of our photo-detectors: high temperature appears on the 1 / f noise whose origin is not fully understood today ( or bulk material interfaces , the debate remains open ... ) .To understand the physical phenomena governing the 1 / f noise in HgCdTe photodiodes through the variation this thesis aims to lots of physical and geometrical parameters in order to highlight the correlations or noise with these variants
3
Guinedor, Pierre. "Etude des bruits basse fréquence et des défauts électriquement actifs dans les détecteurs infrarouge refroidis". Thesis, Université Grenoble Alpes (ComUE), 2019. http://www.theses.fr/2019GREAT120.
Pełny tekst źródłaStreszczenie:
Dans le contexte des technologies HOT (High Operating Temperature) visant l’augmentation de la température de fonctionnement, les bruits basse fréquence 1/f et RTS (Random Telegraph Signal) sont les principaux détracteurs dégradant la qualité image des détecteurs infrarouge refroidis à base de HgCdTe. Ce travail est donc consacré à la détermination des défauts qui en sont à l’origine pour, à terme, pouvoir espérer améliorer la qualité image. A cette fin, deux voies d’étude ont été empruntées : la caractérisation électro-optique des bruits basse fréquence et la caractérisation spectroscopique des défauts électriquement actifs dans le matériau. Après avoir décrit les généralités sur la détection infrarouge et présenté les différentes techniques de spectroscopie employées lors de ce travail, les bruits basse fréquence sont étudiés pour affiner la compréhension de leur mécanisme physique. Enfin, des études de DLTS (Deep Level Transient Spectroscopy) sont menées pour deux technologie de fabrication en bande SWIR (Short Wave InfraRed, λc = 2,5 µm) et MWIR bleu (Mid Wave Infrared, λc = 4,2 µm) pour tenter de remonter aux défauts du matériau qui sont à l’origine de ces bruitsThe current trend in the infrared market is to address HOT (High Operating Temperature) applications, which exacerbates the impact of low frequency noises (Random Telegraph Signal (RTS) and 1/f) and then degrades the image quality of cooled HgCdTe detectors. In this work, the focus was laid on the analysis of defects at the root of these noises to, eventually, improve the image quality. Two paths are introduced: the electro-optical characterization of low frequency noises and the spectroscopic characterization of electrically active defects in the material. First generalities on infrared detection and spectroscopic techniques used in this work are described. Then low frequency noises characterizations are realized to refine the comprehension of their physical mechanisms. Finally DLTS (Deep Level Transient Spectroscopy) studies are performed on two technologies for SWIR (Short Wave InfraRed, λc = 2.5 µm) and MWIR blue ((Mid Wave Infrared, λc = 4.2 µm) bands in order to get to the root of low frequency noises
Części książek na temat "F noise spectroscopy"
1
MIHAILA, Mihai. "LATTICE VIBRATIONS IN SILICON BY 1/f NOISE SPECTROSCOPY". W Noise in Physical Systems and 1/f Noise 1985, 433–35. Elsevier, 1986. http://dx.doi.org/10.1016/b978-0-444-86992-0.50096-5.
Pełny tekst źródłaStreszczenia konferencji na temat "F noise spectroscopy"
1
Mann, J. Adin. "Some Fundamentals of Surface Fluctuation Spectroscopy". W Photon Correlation and Scattering. Washington, D.C.: Optica Publishing Group, 1996. http://dx.doi.org/10.1364/pcs.1996.saa.4.
Pełny tekst źródłaStreszczenie:
The technology of surface light scattering spectroscopy1 involves hardware issues in measuring accurately the surface elevation ζq(t), autocorrelation function Rq(t)def¯¯ζ q *(0)ζ q (t) or the corresponding spectrum, G q (ω)=F^ς* q (0)ς q (t)[ω] where q is the wave number of the capillary wave spectrum and ω the frequency. Major issues include the optimization of the optical signal to noise, minimization of environmental noise and deconvolution of Rq(t) from the instrument function. This last issue is of special interest when measuring scattering from small patches wherein qσ < 20, σ is the Gaussian beam width parameter, as is the case when used with Brewster angle microscopy in overlapping footprints.
2
Werle, P., F. Slemr, M. Gehrtz i C. Brauchle. "High frequency modulation spectroscopy with a lead salt diode laser". W OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/oam.1989.thnn1.
Pełny tekst źródłaStreszczenie:
High frequency modulation spectroscopy (FM) is a promising tool for high speed and ultrasensitive atmospheric trace gas monitoring. From wideband noise characteristics of a lead salt diode laser a potential sensitivity improvement of 2 orders of magnitude in comparison to conventional derivative (2f) spectroscopy can be derived. This enhancement can be achieved by moving in modulation frequency space from the 1/f-noise dominated region (10 kHz) into a shot noise limited frequency domain at 100 MHz. Ultrasensitive absorption spectroscopy of NO2 was performed with a tunable lead salt diode laser (TDL). With a detection bandwidth of 200 kHz, an optical density of 2.7 × 10−5 was detectable at a signal-to-noise-ratio of 1. The detectable optical density could be further improved by reducing the detection bandwidth in agreement with the √Δf-relationship, reaching 2.5 × 10−6 at a detection bandwidth of 1.56 kHz. This detection limit agrees well with the calculated quantum-limited performance based on the measured laser power, modulation index, and other parameters of the apparatus. These measurements and calculations show that by implementation of the FM technique, the sensitivity of the present TDL absorption spectrometers (TDLAS) can be improved by at least a factor of 10 and possibly even of 100. Such a sensitivity improvement would greatly extend the use of TDLAS for trace gas analysis, especially in atmospheric monitoring.
3
Rentz, J. H., J. A. Gargas i C. R. Schwarze. "A Phase-Based Metrology System for Measuring Trace-Gas Concentration". W Laser Applications to Chemical and Environmental Analysis. Washington, D.C.: Optica Publishing Group, 1998. http://dx.doi.org/10.1364/lacea.1998.lmc.5.
Pełny tekst źródłaStreszczenie:
Recent advances in tunable laser diodes and their availability at multiple wavelengths in the near-IR has opened a new era of spectroscopic gas concentration measurement techniques. By adjusting temperature and injection current, the laser diode can be tuned to the wavelength of a molecular resonance of interest, and the absorption can be measured and used to obtain concentration. The injection current can also be modulated, allowing for synchronous detection schemes such as wavelength and frequency modulated spectroscopy (WMS and FMS) which effectively bypass the large 1/f noise component of the laser diode.1-4 In this paper, a new WMS technique is presented which measures phase due to the anomalous dispersion around a resonance for trace gas detection.
4
Fouks, B. I. "Theory of Single Slow Interface Traps in Submicron Metal-Oxide-Electron Field Effect Transistors (MOSFETs) and Single-Electron Spectroscopy of the Traps." W Chemistry and Physics of Small-Scale Structures. Washington, D.C.: Optica Publishing Group, 1997. http://dx.doi.org/10.1364/cps.1997.csud.4.
Pełny tekst źródłaStreszczenie:
The study of small semiconductor devices has made large contribution to solving the low-frequency 1/f noise problem. Experiments (see review [1]) have shown that the less size of device, the easier to observe that the 1/f current noise consists of the unit acts, which are often called random telegraph signals (RTSs) because of their shape. An RTS represents the jumps of a currents between two fixed levels, the duration of the jumps is instantaneous in practice in comparison to the duration of both states of the current, so the RTS is seen as sequence of the current up and down steps of the same value between high and low current states. The times between two neighboring steps are distributed at random with the mean times of high and low current states being very long. The less the size of the device, the less the number of RTSs observed simultaneously and the higher the relative contribution of each RTS to the total current. In submicron devices under certain conditions it is possible to study a single RTS [2]. RTS is caused by capture and emission of electrons (or holes) by a slow electron trap. Thus the study of an RTS in a small-size device permits to investigate the properties of a single slow trap existing in it. The effect of the external parameters, such as temperature, voltage etc. on RTS is generally much more pronounced than that of the 1/f noise consisting of many RTSs. This is the reason why the study of RTSs in submicron devices has given a new valuable information.