Rozprawy doktorskie na temat „Extraction de puissance”
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Mi, Wei. "Extraction des paramètres et domaine de validité du modèle d'un composant de puissance". Lyon, INSA, 2002. http://theses.insa-lyon.fr/publication/2002ISAL0041/these.pdf.
Pełny tekst źródłaFirstly, this study investigates in detail the behavior of power electronic components, such as power diodes, power MOSFETs and IGBTs, during transient in a switching cell including a voltage source and a current source. The typical variables representing the electrical waveforms during the commutation are obtained. To easily characterize the devices, a measurement workbench has been designed, based on the bus GPIB. The workbench can automatically extract the values of these designed, based on the bus GPIB. The workbench can automatically extract the values of these typical variables, and the object-oriented language JAVA is adopted because of its portability for Unix and Windows systems. An identification procedure based on optimization methods has been developed. The comparison between experimental and the simulation results are carried out by the circuit simulator PACTE. The other party of the study is to achieve a new procedure for validating the couple of model-parameters. The map of validity domain enable to verify the agreement experimental and the simulation results for a large domain of conditions. The validation method is original and will change the developing process for the power semiconductor device models. Applying this validation method for the power diode, we have shown the advantages and the drawbacks by comparing the results between the simulation of DESSIS which adopts the finite element method and the results of PACTE. It has been shown that this method is also convenient for the power MOSFET and the IGBT
Mi, Wei Morel Hervé. "Extraction des paramètres et domaine de validité du modèle d'un composant de puissance". Villeurbanne : Doc'INSA, 2004. http://csidoc.insa-lyon.fr/these/2002/mi/index.html.
Pełny tekst źródłaRomdhane, Mehrez. "Extraction solide-liquide sous ultrasons : mise en oeuvre d'un capteur de puissance locale ultrasonore". Toulouse, INPT, 1993. http://www.theses.fr/1993INPT055G.
Pełny tekst źródłaDriche, Khaled. "Diamond unipolar devices : towards impact ionization coefficients extraction". Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAT115/document.
Pełny tekst źródła97% of the published climate studies articles agree with the fact that recent global warming is entirely caused by human activities. The gases emitted to produce electrical energy plus other gases rejected by cars impact considerably on the atmosphere by greenhouse effect (without referring other factors). A solution to this problem is the development of components with lower power conduction losses and higher breakdown characteristics that could be used in nuclear power plants, high power commutation cells, hybrid (electric) cars and so on.The choice of the material to reach low power conduction losses and higher breakdown is of great importance. Nowadays, silicon-based devices control about 95% of all electronic components. Silicon carbide SiC and gallium nitride GaN are at present under research and development and start to be integrated into some electronic circuits. Other materials like Ga2O3, AlN or diamond are under research for power electronic application. The last ones are known as ultra wide bandgap materials and they seem to be the required solution to low power losses. Diamond is recognized as the ultimate material for the next next-generation of power devices owing to its exceptional physical properties such as high breakdown field (>10 MV/cm) to use the device for high power control, high carrier mobility (2000 cm^2/V.s for holes) for fast switching and high frequency devices, high saturation velocity, high thermal conductivity (22 W/cm.K) for a perfect heat dissipation and low dielectric constant. Theoretically, diamond is the best semiconducting material showing the best trade-off between on-resistance and breakdown voltage. Especially, due to the incomplete ionization of the dopant, it is even more efficient at high temperature. Various diamond Schottky barrier diodes (SBDs) with good forward and reverse performances (7.7 MV/cm) were reported. In addition to SBDs, switches diamond field effect transistors (FETs) were also investigated through metal-oxide-semiconductor FETs (MOSFETs) using either an H-terminated diamond surface with high current densities in on-state or an O-terminated one with high blocking characteristics. For the high blocking voltage devices, one needs to properly terminate the edge of the electrode at the surface in order to avoid premature breakdown of the devices due to electric field crowding at the borders. In that aim, edge termination (ET) techniques are used to push the limit of the devices and reach ideal features. The obvious task before any device fabrication if the simulation part that predicts the device optimization and expected characteristics. A good device prediction requires knowledge of the material parameters. Important parameters for device breakdown in the off-state are the impact ionization coefficients. At present, several ionization coefficients were reported for diamond, however, they were extracted by fitting non-optimized structures and hence there is a lack of accuracy.In this study, two edge terminations structures for Schottky barrier diodes called field plate (FP) oxide and floating field rings were investigated. Their effectiveness in surface field distribution via electron beam induced current (EBIC) analysis was observed. In addition, normally-on FETs were fabricated and characterized, a MESFET and a reverse blocking (RB)-MESFET. The FETs exhibited a high BV, up to 3 kV and a low on-resistance. The development of transistors is inseparable from the Schottky diode since both are required to fabricate commutation cells. And finally, impact ionization coefficients for electrons were measured using EBIC for a field >0.5 MV/cm in a defect-free region. The measured values are (in a Chynoweth form) an = 971 /cm and bn = 2.39x10^6 V/cm. These values are close to the experimentally measured coefficients reported in the literature
Ben, Salah Tarek. "Contribution à la conception des dispositifs de puissance en carbure de silicium : étude et extraction des paramètres". Lyon, INSA, 2007. http://theses.insa-lyon.fr/publication/2007ISAL0003/these.pdf.
Pełny tekst źródłaSuperior properties for power devices, compared to silicon. The characterization of high voltage SiC devices is requires in the development of these devices. However the transient measurement is not very easy because of the influence of numerous parasitic elements. A new experimental set-up is developed and validated to characterize high voltage diodes in switch transient regime. The experimental set-up enable to measure nice current and voltage transient characteristics, i. E. Without noise and high parasitic wiring influence. PiN diodes are fabricated with many trade-offs balance physical constraints. In particular the doping concentration, Nd, the width of the low doped base region, Wd, and the effective area of the device, A, define the reverse breakdown voltage of the PiN diode and the resistance of the diode epitaxial layer under forward bias and the ambipolar lifetime tau. It is difficult to obtain these parameters directly from the manufacturer. Moreover, device reverse-engineering remains a delicate and destructive task while engineers are more interest in a non-destructive extraction method of design parameters. This physics-based approach focuses on isolating the ambipolar lifetime from Wb, Nd and A parameters during transient behaviour. Therefore, this allows users the flexibility to extract parameters by minimizing the error between experimental and simulation data. The algorithm is based from DMTVCA and OCVD techniques are validated in a buck converters on a resistive load. A good agreement between experimental and simulation data is obtained
Ben, Salah Tarek Morel Hervé Besbes Kamel. "Contribution à la conception des dispositifs de puissance en carbure de silicium étude et extraction des paramètres /". Villeurbanne : Doc'INSA, 2007. http://docinsa.insa-lyon.fr/these/pont.php?id=ben_salah.
Pełny tekst źródłaThèse soutenue en co-tutelle. Titre provenant de l'écran-titre. Bibliogr. p. 158-164.
Gasseling, Tony. "Caractérisation non linéaire avancée de transistors de puissance pour la validation de leur modèle CAO". Limoges, 2003. http://www.theses.fr/2003LIMO0041.
Pełny tekst źródłaAdvanced functional characterizations of power transistors for the validation of nonlinear models of SC devices used in CAD packages. This work deals with different functional characterization methods for the design of optimized power amplifiers. These characterizations are carried out on transistors at the first stages of the design, in a source and load-pull environment. Thus, it is shown that a pulsed load-pull set up is very useful to validate the technologies used for the generation of high power at RF and microwave frequencies. It also enables to deeply validate the thermoelectric nonlinear models of transistors developed for this purpose. For the design of amplifiers which operate up to millimetric frequencies (Ku / K Band), reaching high power under constraint of efficiency and linearity is one of the most critical point because of the weak reserves of power gain proposed. In this context, the development of an active source and load-pull setup is of prime importance. It enables to primarily determine the transistor optimum operating conditions (Matching and DC bias) to reach the best trade off between efficiency and linearity. Finally, a new method to perform Hot Small-Signal S-Parameter measurements of power transistors operating under large signal conditions is proposed. An application to the prediction of parametric oscillations when the transistor is driven by a pump signal is demonstrated
El, Omari Hafsa. "Extraction des paramètres des modèles du VDMOS à partir des caractéristiques en commutation : comparaison avec les approches classiques". Lyon, INSA, 2003. http://theses.insa-lyon.fr/publication/2003ISAL0040/these.pdf.
Pełny tekst źródłaThe study is about the analysis and the characterization of the VDMOS. First part of the text recalls the structure, the behavior and the modeling of the VDMOS. A semi-behavioral model, "2KP-model", has been selected. Experimental characterizations have been done in I-V, C-V and switching mode of operation. The role of pulse duration has been studied for quasi-static I-V characterization. Second part describes classical characterization and parameter extraction techniques applied to VDMOS models. Comparisons between simulations and measurements in switching mode operation in an R-L circuit are achieved. Third part corresponds to parameter extraction of the VDMOS model based on R-L switching measurements. Transient measured signals in such conditions yield sufficient information for the parameter extraction. An automatic identification procedure, based on optimization of the difference between measurements and simulation, has been applied. So comparison between PACTE simulations and experiments has been done. The obtained results show equivalence with respect to classical method. The interest of the proposed method is a drastic reduction of measurement noise
El, Omari Hafsa Morel Hervé. "Extraction des paramètres des modèles du VDMOS à partir des caractéristiques en commutation comparaison avec les approches classiques /". Villeurbanne : Doc'INSA, 2005. http://docinsa.insa-lyon.fr/these/pont.php?id=el_omari.
Pełny tekst źródłaZou, Hao. "Méthodologie pour la modélisation des parasites de substrat en technologie MOS de puissance HV/HT - Application à l'industrie automobile". Thesis, Paris 6, 2016. http://www.theses.fr/2016PA066502/document.
Pełny tekst źródłaSmart Power Integrated Circuits (ICs) are intensively used in automotive embedded systems due to their unique capabilities to merge low power and high voltage (HV) devices on the same chip. In such systems, induced electrical coupling noise due to switching of the power stages is a big issue. During switching, parasitic voltages and currents, lead to a local shift of the substrate potential that can reach hundreds of millivolts, and can severely disturb low voltage circuits. Such parasitic signals are known to represent the major cause of failure and costly circuit redesign in power ICs. Most solutions are layout dependent and are thus difficult to optimize using available electrical simulator. The lack for a model strategy prohibits an efficient design strategy and fails at giving clear predictions of perturbations in HV ICs. Here, we present a post-layout extraction and simulation methodology for substrate parasitic modeling. We have developed a Computer-Aided-Design (CAD) tool for substrate extraction from layout patterns. The extraction employs a meshing algorithm for substrate model generation. The behavior of the substrate currents can be taken into account in post-layout simulation, and enables an exhaustive failure analysis due to substrate coupling. Several industrial test cases are considered to validate this work, the interferences of substrate currents in a current mirror configuration, and a standard automotive test in amsHV technology. This methodology is also applied to a HV BCD technology of STMicroelectronics. Eventually, by using the proposed CAD tool, it becomes possible to simulate the behaviors of substrate noises before fabrication
Mao, Rui. "Simulation de l’extraction de puissance dans un tokamak à configuration divertor alternative avec le code SOLEDG2D". Electronic Thesis or Diss., Ecole centrale de Marseille, 2019. http://www.theses.fr/2019ECDM0011.
Pełny tekst źródłaPower exhaust is one of the critical issue toward the elaboration of a magnetic confinement fusion reactor. Magnetic confinement is responsible for an extremely localized plasma bombardment on plasma facing components, requiring strong volume dissipation in a dedicated plasma volume called divertor. ITER exhaust strategy relies on a standard closed divertor geometry designed from smaller scale experiments and plasma simulations. Until conclusions from ITER results, current experimental trends however suggest that such divertor concept has to be improved for dealing with power exhaust constraints imposed by a larger reactor like DEMO. This PhD project aimed at studying the potential benefit of divertor configurations alternative to the one of ITER, as targeted in the new Chinese tokamak HL-2M. A particular interest was devoted to so-called snowflake configurations, consisting in two neighbor X-points on the divertor magnetic field. For the first time, these geometries have been fully simulated with the SOLEDGE2D-EREINE code, consisting in a fluid solver for the plasma particle, momentum and energy conservation, coupled to a Monte Carlo solver for neutral dynamics. In a staged approach, SOLEDG2D simulations were first applied to the more conventional divertor geometry of the WEST tokamak, aiming for a direct comparison with experimental results. A set of synthetic diagnostics have been developed from SOLEDGE simulations to mimic a broad set of experimental diagnostics. Density ramps were simulated, featuring divertor detachment in qualitative agreement with experimental observations. Then, snowflake geometries of HL2M were addressed. First, magnetic geometries were constructed with a magnetic equilibrium solver, optimizing current distribution in poloidal field coils. Mesh were generated on these magnetic maps for the SOLEDGE plasma solver. To tackle the large number of mesh elements required by the snowflake geometry, a coarse-graining convergence technique was developed, providing a speed up of the convergence time of SOLEDGE simulations by a factor of about 10. Three configurations have been generated: standard single null (SN), snowflake plus (SF+), snowflake minus (SF-). Detachment of the outer target is studied in these configurations during plasma density ramps, at constant input power and constant radial transport coefficients. Some typical characteristics of detachment, like threshold, depth and upstream window of detachment are investigated. In the three geometries, detachment onset and evolution with upstream plasma density is characterized by the gradual displacement of a radiation front from the outer target to the main X-point, as observed in experiments. It is found that, whatever the detachment in terms of particle, momentum or power dissipation, the detachment threshold is dominated primarily by the geometrical structure of divertor plate and it does not exhibit dependence on the magnetic configuration of the diverted plasma volume. In particular, the parallel connection length in the divertor is not found to affect the detachment threshold, in contrast with expectations from the 2-point model, but in agreement with experimental findings. These simulation results are a first step necessary toward the ambitious objective of predicting the benefit of alternative configuration for DEMO size conditions. It rather evidences the necessity of addressing this complex issue with a global approach coupling experimental tests, reduced model development and simulations results from complex numerical tools
Zou, Hao. "Méthodologie pour la modélisation des parasites de substrat en technologie MOS de puissance HV/HT - Application à l'industrie automobile". Electronic Thesis or Diss., Paris 6, 2016. http://www.theses.fr/2016PA066502.
Pełny tekst źródłaSmart Power Integrated Circuits (ICs) are intensively used in automotive embedded systems due to their unique capabilities to merge low power and high voltage (HV) devices on the same chip. In such systems, induced electrical coupling noise due to switching of the power stages is a big issue. During switching, parasitic voltages and currents, lead to a local shift of the substrate potential that can reach hundreds of millivolts, and can severely disturb low voltage circuits. Such parasitic signals are known to represent the major cause of failure and costly circuit redesign in power ICs. Most solutions are layout dependent and are thus difficult to optimize using available electrical simulator. The lack for a model strategy prohibits an efficient design strategy and fails at giving clear predictions of perturbations in HV ICs. Here, we present a post-layout extraction and simulation methodology for substrate parasitic modeling. We have developed a Computer-Aided-Design (CAD) tool for substrate extraction from layout patterns. The extraction employs a meshing algorithm for substrate model generation. The behavior of the substrate currents can be taken into account in post-layout simulation, and enables an exhaustive failure analysis due to substrate coupling. Several industrial test cases are considered to validate this work, the interferences of substrate currents in a current mirror configuration, and a standard automotive test in amsHV technology. This methodology is also applied to a HV BCD technology of STMicroelectronics. Eventually, by using the proposed CAD tool, it becomes possible to simulate the behaviors of substrate noises before fabrication
El, achkar Maria. "Contribution au Dimensionnement et à la Commande d’un Générateur de type Cascade de Machines Asynchrones à Double Alimentation". Thesis, Cergy-Pontoise, 2016. http://www.theses.fr/2016CERG0814/document.
Pełny tekst źródłaThis thesis is a contribution to the power sizing and the control of a Cascaded Doubly Fed Induction Generator (CDFIG). The machine model for simulation is based on a modular representation, derived from the Park model of two distinct Doubly Fed Induction Machines expressed in their own reference frames. The dynamic model of the cascaded machine is then extended to be described in a unified reference frame. This representation is convenient for the sizing of the machine and for the design of the controller. The steady state power operating margins of the cascaded machine are investigated. A generic analytic method is suggested to derive the active-reactive power domain. The limit curves are defined in terms of the rated quantities of the machine. The study takes into account the magnetic circuit saturation effect. It is proven that the power capability of the machine is determined by the stator current maximum values and is subject to several limitations. The analytical approach is tested and validated by experimental measurements. The CDFIG is controlled in grid-connected and standalone operation modes. In grid-connected application, the attention is paid to high power wind generation systems. A new maximum power tracking of a variable speed wind turbine is suggested. The generating plant is carried to provide a quasi-constant maximum power regardless wind fluctuations. In addition to active power optimization the power factor is adjusted according to the grid code requirements and the operating domain of the integrated unit. A virtual flux oriented vector control is applied for the decoupled regulation of active and reactive powers, leading to grid voltage sensorless operation. In standalone operating mode, the study treats in particular the embedded aircraft power system generation. Two distribution networks are considered: constant frequency AC network and DC network. In both cases, the control aims to maintain a constant output voltage. The operation of the CDFIG supplying unbalanced three-phase load is further explored. Control schemes to cope with unbalanced stator voltage conditions are developed. Two compensation methods are elaborated: the first dealing with dual rotating frames and the second is based on repetitive controller. Simulations with Matlab/Simulink software and experiments validate the control approaches
Grandjean, Fleury. "Caractérisations des matériaux pour l'électronique rapide : outils théoriques et expérimentaux". Grenoble INPG, 1995. http://www.theses.fr/1995INPG0011.
Pełny tekst źródłaRoussey, Clara. "La fabrique de l'(im)puissance : une critique de la RSE dans le cas Weda Bay Nickel". Thesis, Montpellier, 2019. http://www.theses.fr/2019MONTD002.
Pełny tekst źródłaThe academic field of organization studies has paid, in the past several years, a growing attention to the social and environmental impacts of economic activities, to their management as well as their governance. The idea of a corporate social responsibility (CSR) came to materialize and embody the commitment of corporations against unsustainable activities, even if the voluntary or constrained character of this phenomenon remains a matter of debate. Additionally, the prospects of CSR in terms of concrete transformations leading to more sustainable and democratic practices are still questioned. Critical scholars of CSR have, more recently, tackled these issues by pointing to the need for bringing power struggles back in the study of CSR. Although CSR principles aim at managing a multiplicity of stakeholders, critical scholars have highlighted that CSR practices took shape as a discursive power designed for maintaining and enforcing existing practices and power asymmetries, thanks to a marginalization of protestors and those trying to threaten their continuity.This doctoral project is precisely drawing upon such critical perspectives on CSR in order to understand comprehensively the political mechanisms according to which a corporate power manages to rise so as to counter potential protests and secure its own perpetuation. More particularly, this project devotes a significant attention to the implications of such corporate power on powerless stakeholders, highlighting the specific means implemented to manufacture powerlessness, starting from the following research questions: what are the modalities, mechanisms and black boxes upon which the legitimation process of corporations’ social and environmental impacts relies? What are the techniques and technologies of power designed and implemented by corporations in order to do so? How do they manage to maintain and renew their power in the face of struggles, contests and denunciations trying to challenge it?The design of this doctoral project relied on two different stages: an exploratory study of a multiplicity of CSR discourses articulated within and around a political CSR arena of the mining industry ; an in-depth case study of Weda Bay Nickel, i.e. a mining project undertaken by a French multinational corporation, Eramet, in far-off Indonesia. The methodological background of the doctoral project draws upon pragmatic constructivism and qualitative methods in order to comprehend and deconstruct the paradox according to which the Weda Bay Nickel case is at the same time praised for its exemplariness and fiercely contested. Data collection consisted in a systematic inventory of published data, interviews with a multiplicity of stakeholders (N = 41), as well as a period of three weeks ethnography in the Indonesia North Maluku region, where the mining deposit is located. Data analysis was conducted following a descriptive narrative approach, allowing for the production of a narrative which starts from the context of manufacture of corporate powerfulness, from a mere object of geological then financial speculation to a project of development that must be achieved, thanks to historical contingencies, return-on-investment self-fulfilling imperatives, as well as the forging of a coalition of interests. The narrative continues to portray the manufacture of powerlessness of protesters, rebellions and social movements, highlighting that the failure to contest corporate power cannot be associated to a powerlessness per se. Accordingly, the manufacture of powerlessness is shown to be of a socially constructed nature, relying on the implementation of framing and coercive forms of power by the corporation and its allies. Framing and coercion being the cornerstones of a policy that seems to go far beyond a search for legitimation. Instead, they can be subsumed into the idea of a domination process, experienced as non-disputable and non-reversible by the powerless stakeholders
El, Boubkari Kamal. "Impact de la modélisation physique bidimensionnelle multicellulaire du composant semi-conducteur de puissance sur l'évaluation de la fiabilité des assemblages appliqués au véhicule propre". Phd thesis, Université Sciences et Technologies - Bordeaux I, 2013. http://tel.archives-ouvertes.fr/tel-00856596.
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