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Artykuły w czasopismach na temat "Extraction de puissance"
CORDOVA LLANOS, V., X. HUMBEL, J. BOISSON, T. PICHARD, R. PHILIPPE i M. POMIES. "Analyse du potentiel de récupération de chaleur des eaux usées prenant en compte l’impact sur la STEU". 3 3 (21.03.2022): 63–71. http://dx.doi.org/10.36904/tsm/202203063.
Pełny tekst źródłaAráoz, Horacio Machado, Aimée Martínez Vega, Leonardo Rossi i Christophe David. "La transition énergétique, une menace pour les communautés rurales. L’extraction du lithium dans le Bolsón de Fiambalá (Province de Catamarca, Argentine)". Écologie & politique N° 68, nr 1 (3.05.2024): 63–70. http://dx.doi.org/10.3917/ecopo1.068.0063.
Pełny tekst źródłaMatonga, Joel Immanuel. "Using the public trust doctrine to hold mining transnational corporations in Africa accountable for environmental wrongs / Utiliser la doctrine de la confiance publique pour obtenir la responsabilité des sociétés multinationales minières quant à leurs atteintes sur l’environnement". Journal of the African Union Commission on International Law 2021 (2021): 162–84. http://dx.doi.org/10.47348/aucil/2021/a5.
Pełny tekst źródłaZenoh, D. A., B. Josephus, N. Halley, Endurance Okpan, Henry Chukwuemeka i Akumbo Gemenen. "Evaluation of antimicrobial properties of five medicinal plants used against bacterial infections in Jalingo, Nigeria". African Journal of Clinical and Experimental Microbiology 25, nr 2 (3.04.2024): 219–26. http://dx.doi.org/10.4314/ajcem.v25i2.13.
Pełny tekst źródłaBurghardt, Linda F. "An Epistemological Analysis of Holocaust Survivor Transcripts". Proceedings of the Annual Conference of CAIS / Actes du congrès annuel de l'ACSI, 21.10.2013. http://dx.doi.org/10.29173/cais350.
Pełny tekst źródłaAubertin, Jonathan D., Michel Aubertin i Abtin Jahanbakhshzadeh. "Correction: numerical implementation and application of an internal state variable model to analyze the time-dependent behavior of mining excavations in rock salt". Canadian Geotechnical Journal, 21.09.2023. http://dx.doi.org/10.1139/cgj-2023-0442.
Pełny tekst źródłaBanerjee, Shantanu, Shyamapada Mandal, Naveen G. Jesubalan, Rijul Jain i Anurag S. Rathore. "NIR spectroscopy—CNN‐enabled chemometrics for multianalyte monitoring in microbial fermentation". Biotechnology and Bioengineering, 23.02.2024. http://dx.doi.org/10.1002/bit.28681.
Pełny tekst źródłaRozprawy doktorskie na temat "Extraction de puissance"
Mi, Wei. "Extraction des paramètres et domaine de validité du modèle d'un composant de puissance". Lyon, INSA, 2002. http://theses.insa-lyon.fr/publication/2002ISAL0041/these.pdf.
Pełny tekst źródłaFirstly, this study investigates in detail the behavior of power electronic components, such as power diodes, power MOSFETs and IGBTs, during transient in a switching cell including a voltage source and a current source. The typical variables representing the electrical waveforms during the commutation are obtained. To easily characterize the devices, a measurement workbench has been designed, based on the bus GPIB. The workbench can automatically extract the values of these designed, based on the bus GPIB. The workbench can automatically extract the values of these typical variables, and the object-oriented language JAVA is adopted because of its portability for Unix and Windows systems. An identification procedure based on optimization methods has been developed. The comparison between experimental and the simulation results are carried out by the circuit simulator PACTE. The other party of the study is to achieve a new procedure for validating the couple of model-parameters. The map of validity domain enable to verify the agreement experimental and the simulation results for a large domain of conditions. The validation method is original and will change the developing process for the power semiconductor device models. Applying this validation method for the power diode, we have shown the advantages and the drawbacks by comparing the results between the simulation of DESSIS which adopts the finite element method and the results of PACTE. It has been shown that this method is also convenient for the power MOSFET and the IGBT
Mi, Wei Morel Hervé. "Extraction des paramètres et domaine de validité du modèle d'un composant de puissance". Villeurbanne : Doc'INSA, 2004. http://csidoc.insa-lyon.fr/these/2002/mi/index.html.
Pełny tekst źródłaRomdhane, Mehrez. "Extraction solide-liquide sous ultrasons : mise en oeuvre d'un capteur de puissance locale ultrasonore". Toulouse, INPT, 1993. http://www.theses.fr/1993INPT055G.
Pełny tekst źródłaDriche, Khaled. "Diamond unipolar devices : towards impact ionization coefficients extraction". Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAT115/document.
Pełny tekst źródła97% of the published climate studies articles agree with the fact that recent global warming is entirely caused by human activities. The gases emitted to produce electrical energy plus other gases rejected by cars impact considerably on the atmosphere by greenhouse effect (without referring other factors). A solution to this problem is the development of components with lower power conduction losses and higher breakdown characteristics that could be used in nuclear power plants, high power commutation cells, hybrid (electric) cars and so on.The choice of the material to reach low power conduction losses and higher breakdown is of great importance. Nowadays, silicon-based devices control about 95% of all electronic components. Silicon carbide SiC and gallium nitride GaN are at present under research and development and start to be integrated into some electronic circuits. Other materials like Ga2O3, AlN or diamond are under research for power electronic application. The last ones are known as ultra wide bandgap materials and they seem to be the required solution to low power losses. Diamond is recognized as the ultimate material for the next next-generation of power devices owing to its exceptional physical properties such as high breakdown field (>10 MV/cm) to use the device for high power control, high carrier mobility (2000 cm^2/V.s for holes) for fast switching and high frequency devices, high saturation velocity, high thermal conductivity (22 W/cm.K) for a perfect heat dissipation and low dielectric constant. Theoretically, diamond is the best semiconducting material showing the best trade-off between on-resistance and breakdown voltage. Especially, due to the incomplete ionization of the dopant, it is even more efficient at high temperature. Various diamond Schottky barrier diodes (SBDs) with good forward and reverse performances (7.7 MV/cm) were reported. In addition to SBDs, switches diamond field effect transistors (FETs) were also investigated through metal-oxide-semiconductor FETs (MOSFETs) using either an H-terminated diamond surface with high current densities in on-state or an O-terminated one with high blocking characteristics. For the high blocking voltage devices, one needs to properly terminate the edge of the electrode at the surface in order to avoid premature breakdown of the devices due to electric field crowding at the borders. In that aim, edge termination (ET) techniques are used to push the limit of the devices and reach ideal features. The obvious task before any device fabrication if the simulation part that predicts the device optimization and expected characteristics. A good device prediction requires knowledge of the material parameters. Important parameters for device breakdown in the off-state are the impact ionization coefficients. At present, several ionization coefficients were reported for diamond, however, they were extracted by fitting non-optimized structures and hence there is a lack of accuracy.In this study, two edge terminations structures for Schottky barrier diodes called field plate (FP) oxide and floating field rings were investigated. Their effectiveness in surface field distribution via electron beam induced current (EBIC) analysis was observed. In addition, normally-on FETs were fabricated and characterized, a MESFET and a reverse blocking (RB)-MESFET. The FETs exhibited a high BV, up to 3 kV and a low on-resistance. The development of transistors is inseparable from the Schottky diode since both are required to fabricate commutation cells. And finally, impact ionization coefficients for electrons were measured using EBIC for a field >0.5 MV/cm in a defect-free region. The measured values are (in a Chynoweth form) an = 971 /cm and bn = 2.39x10^6 V/cm. These values are close to the experimentally measured coefficients reported in the literature
Ben, Salah Tarek. "Contribution à la conception des dispositifs de puissance en carbure de silicium : étude et extraction des paramètres". Lyon, INSA, 2007. http://theses.insa-lyon.fr/publication/2007ISAL0003/these.pdf.
Pełny tekst źródłaSuperior properties for power devices, compared to silicon. The characterization of high voltage SiC devices is requires in the development of these devices. However the transient measurement is not very easy because of the influence of numerous parasitic elements. A new experimental set-up is developed and validated to characterize high voltage diodes in switch transient regime. The experimental set-up enable to measure nice current and voltage transient characteristics, i. E. Without noise and high parasitic wiring influence. PiN diodes are fabricated with many trade-offs balance physical constraints. In particular the doping concentration, Nd, the width of the low doped base region, Wd, and the effective area of the device, A, define the reverse breakdown voltage of the PiN diode and the resistance of the diode epitaxial layer under forward bias and the ambipolar lifetime tau. It is difficult to obtain these parameters directly from the manufacturer. Moreover, device reverse-engineering remains a delicate and destructive task while engineers are more interest in a non-destructive extraction method of design parameters. This physics-based approach focuses on isolating the ambipolar lifetime from Wb, Nd and A parameters during transient behaviour. Therefore, this allows users the flexibility to extract parameters by minimizing the error between experimental and simulation data. The algorithm is based from DMTVCA and OCVD techniques are validated in a buck converters on a resistive load. A good agreement between experimental and simulation data is obtained
Ben, Salah Tarek Morel Hervé Besbes Kamel. "Contribution à la conception des dispositifs de puissance en carbure de silicium étude et extraction des paramètres /". Villeurbanne : Doc'INSA, 2007. http://docinsa.insa-lyon.fr/these/pont.php?id=ben_salah.
Pełny tekst źródłaThèse soutenue en co-tutelle. Titre provenant de l'écran-titre. Bibliogr. p. 158-164.
Gasseling, Tony. "Caractérisation non linéaire avancée de transistors de puissance pour la validation de leur modèle CAO". Limoges, 2003. http://www.theses.fr/2003LIMO0041.
Pełny tekst źródłaAdvanced functional characterizations of power transistors for the validation of nonlinear models of SC devices used in CAD packages. This work deals with different functional characterization methods for the design of optimized power amplifiers. These characterizations are carried out on transistors at the first stages of the design, in a source and load-pull environment. Thus, it is shown that a pulsed load-pull set up is very useful to validate the technologies used for the generation of high power at RF and microwave frequencies. It also enables to deeply validate the thermoelectric nonlinear models of transistors developed for this purpose. For the design of amplifiers which operate up to millimetric frequencies (Ku / K Band), reaching high power under constraint of efficiency and linearity is one of the most critical point because of the weak reserves of power gain proposed. In this context, the development of an active source and load-pull setup is of prime importance. It enables to primarily determine the transistor optimum operating conditions (Matching and DC bias) to reach the best trade off between efficiency and linearity. Finally, a new method to perform Hot Small-Signal S-Parameter measurements of power transistors operating under large signal conditions is proposed. An application to the prediction of parametric oscillations when the transistor is driven by a pump signal is demonstrated
El, Omari Hafsa. "Extraction des paramètres des modèles du VDMOS à partir des caractéristiques en commutation : comparaison avec les approches classiques". Lyon, INSA, 2003. http://theses.insa-lyon.fr/publication/2003ISAL0040/these.pdf.
Pełny tekst źródłaThe study is about the analysis and the characterization of the VDMOS. First part of the text recalls the structure, the behavior and the modeling of the VDMOS. A semi-behavioral model, "2KP-model", has been selected. Experimental characterizations have been done in I-V, C-V and switching mode of operation. The role of pulse duration has been studied for quasi-static I-V characterization. Second part describes classical characterization and parameter extraction techniques applied to VDMOS models. Comparisons between simulations and measurements in switching mode operation in an R-L circuit are achieved. Third part corresponds to parameter extraction of the VDMOS model based on R-L switching measurements. Transient measured signals in such conditions yield sufficient information for the parameter extraction. An automatic identification procedure, based on optimization of the difference between measurements and simulation, has been applied. So comparison between PACTE simulations and experiments has been done. The obtained results show equivalence with respect to classical method. The interest of the proposed method is a drastic reduction of measurement noise
El, Omari Hafsa Morel Hervé. "Extraction des paramètres des modèles du VDMOS à partir des caractéristiques en commutation comparaison avec les approches classiques /". Villeurbanne : Doc'INSA, 2005. http://docinsa.insa-lyon.fr/these/pont.php?id=el_omari.
Pełny tekst źródłaZou, Hao. "Méthodologie pour la modélisation des parasites de substrat en technologie MOS de puissance HV/HT - Application à l'industrie automobile". Thesis, Paris 6, 2016. http://www.theses.fr/2016PA066502/document.
Pełny tekst źródłaSmart Power Integrated Circuits (ICs) are intensively used in automotive embedded systems due to their unique capabilities to merge low power and high voltage (HV) devices on the same chip. In such systems, induced electrical coupling noise due to switching of the power stages is a big issue. During switching, parasitic voltages and currents, lead to a local shift of the substrate potential that can reach hundreds of millivolts, and can severely disturb low voltage circuits. Such parasitic signals are known to represent the major cause of failure and costly circuit redesign in power ICs. Most solutions are layout dependent and are thus difficult to optimize using available electrical simulator. The lack for a model strategy prohibits an efficient design strategy and fails at giving clear predictions of perturbations in HV ICs. Here, we present a post-layout extraction and simulation methodology for substrate parasitic modeling. We have developed a Computer-Aided-Design (CAD) tool for substrate extraction from layout patterns. The extraction employs a meshing algorithm for substrate model generation. The behavior of the substrate currents can be taken into account in post-layout simulation, and enables an exhaustive failure analysis due to substrate coupling. Several industrial test cases are considered to validate this work, the interferences of substrate currents in a current mirror configuration, and a standard automotive test in amsHV technology. This methodology is also applied to a HV BCD technology of STMicroelectronics. Eventually, by using the proposed CAD tool, it becomes possible to simulate the behaviors of substrate noises before fabrication