Gotowa bibliografia na temat „ESD physics”
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Artykuły w czasopismach na temat "ESD physics"
Jauhariyah, M. N. R., B. K. Prahani, K. Syahidi, U. A. Deta, N. A. Lestari i E. Hariyono. "ESD for physics: how to infuse education for sustainable development (ESD) to the physics curricula?" Journal of Physics: Conference Series 1747, nr 1 (1.02.2021): 012032. http://dx.doi.org/10.1088/1742-6596/1747/1/012032.
Pełny tekst źródłaKrabbenborg, Benno, Reinier Beltman, Philip Wolbert i Ton Mouthaan. "Physics of electro-thermal effects in ESD protection devices". Journal of Electrostatics 28, nr 3 (wrzesień 1992): 285–99. http://dx.doi.org/10.1016/0304-3886(92)90077-7.
Pełny tekst źródłaAlvarez, D., M. J. Abou-Khalil, C. Russ, K. Chatty, R. Gauthier, D. Kontos, J. Li, C. Seguin i R. Halbach. "Analysis of ESD failure mechanism in 65nm bulk CMOS ESD NMOSFETs with ESD implant". Microelectronics Reliability 46, nr 9-11 (wrzesień 2006): 1597–602. http://dx.doi.org/10.1016/j.microrel.2006.07.041.
Pełny tekst źródłaPaul, Milova, Christian Russ, B. Sampath Kumar, Harald Gossner i Mayank Shrivastava. "Physics of Current Filamentation in ggNMOS Devices Under ESD Condition Revisited". IEEE Transactions on Electron Devices 65, nr 7 (lipiec 2018): 2981–89. http://dx.doi.org/10.1109/ted.2018.2835831.
Pełny tekst źródłaSinha, Dheeraj Kumar, i Amitabh Chatterjee. "SPICE level implementation of physics of filamentation in ESD protection devices". Microelectronics Reliability 79 (grudzień 2017): 239–47. http://dx.doi.org/10.1016/j.microrel.2017.05.022.
Pełny tekst źródłaXu, Ke, Xing Chen i Zhenzhen Chen. "A Physics-based Transient Simulation and Modeling Method for Wide-frequency Electrical Overstress Including ESD". Applied Computational Electromagnetics Society 36, nr 5 (14.06.2021): 505–12. http://dx.doi.org/10.47037/2020.aces.j.360503.
Pełny tekst źródłaLiu, Xiao Yu, Jiang Shao, Xing Hao Wang i Feng Ming Lu. "Research Progress on Electrostatic Discharge Failure Models in Semiconductor Materials". Advanced Materials Research 548 (lipiec 2012): 527–31. http://dx.doi.org/10.4028/www.scientific.net/amr.548.527.
Pełny tekst źródłaRushby, Nick. "Editorial: Recent references". Education and Self Development 17, nr 1 (31.03.2022): 6–7. http://dx.doi.org/10.26907/esd.17.1.01.
Pełny tekst źródłaRushby, Nick. "Editorial: Recent references". Education and Self Development 17, nr 1 (31.03.2022): 8–9. http://dx.doi.org/10.26907/esd.17.1.01r.
Pełny tekst źródłaStadler, Wolfgang, Tilo Brodbeck, Reinhold Gärtner i Harald Gossner. "Do ESD fails in systems correlate with IC ESD robustness?" Microelectronics Reliability 49, nr 9-11 (wrzesień 2009): 1079–85. http://dx.doi.org/10.1016/j.microrel.2009.07.029.
Pełny tekst źródłaRozprawy doktorskie na temat "ESD physics"
Chen, Tze Wee. "A physics-based design methodology for digital systems robust to ESD-CDM events /". May be available electronically:, 2009. http://proquest.umi.com/login?COPT=REJTPTU1MTUmSU5UPTAmVkVSPTI=&clientId=12498.
Pełny tekst źródłaErtenberg, Randolph. "CoGe&esc;b1&esc;s&&dotb;esc;b5&esc;sSe&esc;b1&esc;s&&dotb;esc;b5&esc;s [electronic resource] : structural and transport properties characterization / by Randolph Ertenberg". University of South Florida, 2003. http://purl.fcla.edu/fcla/etd/SFE0000130.
Pełny tekst źródłaDocument formatted into pages; contains 43 pages.
Thesis (M.S.)--University of South Florida, 2003.
Includes bibliographical references.
Text (Electronic thesis) in PDF format.
ABSTRACT: Skutterudites have been of great interest for thermoelectric applications over the last ten years. Scientific interest has focused on the unique transport properties Skutterudites possess due to the unique crystal structure. Technical interest has grown since it was discovered that some compounds rival the current best thermoelectric materials. To further the understanding of this material system, and optimize its thermoelectric properties, the synthesis and characterization of polycrystalline n- and p-type CoGe&esc;b1&esc;s&&dotb;esc;b5&esc;sSe&esc;b1&esc;s&&dotb;esc;b5&esc;s was undertaken. Structural, morphological, chemical, electrical, thermal and magnetic properties were studied. These data are compared to those of the binary Skutterudite CoSb3. The results of this study show a very sensitive dependence of the physical properties on stoichiometry.
ABSTRACT: While the thermoelectric figure of merit is low in these materials, it is apparent that optimization via doping and "void filling" will lead to improved thermoelectric properties.
System requirements: World Wide Web browser and PDF reader.
Mode of access: World Wide Web.
Xu, Chen. "Advanced Topographic Characterization of Variously Prepared Niobium Surfaces and Linkage to RF Losses". W&M ScholarWorks, 2013. https://scholarworks.wm.edu/etd/1539623621.
Pełny tekst źródłaBertin, Mathieu. "Processus induits par les électrons de basse énergie (0-20 eV) dans les systèmes condensés". Phd thesis, Université Paris Sud - Paris XI, 2007. http://tel.archives-ouvertes.fr/tel-00280603.
Pełny tekst źródłaWeidong, Yang. "Pupil phase apodization for achromatic imaging of extra-solar planets". Available online. Click here, 2004. http://services.lib.mtu.edu/etd/DISS/2004/Physics/yangw/diss.pdf.
Pełny tekst źródłaVoyantzis, Mitchell D. "CloudMEMS Platform for Design and Simulation of MEMS: Physics Modules & End-to-End Testing". University of Toledo / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1533226484963866.
Pełny tekst źródłade, la Puente Alejandro M. "Kaon photoproduction of the proton: contribution of higher angular momentum and energy resonances to the cross-section and polarization asymmetries through an effective Lagrangian model". FIU Digital Commons, 2008. http://digitalcommons.fiu.edu/etd/3014.
Pełny tekst źródłaDominquez, Alberto Luis. "Meson-meson scattering in 2+1 dimensional lattice quantum electrodynamics". FIU Digital Commons, 1994. http://digitalcommons.fiu.edu/etd/3634.
Pełny tekst źródłaFaxas, Miguel A. Jr. "Experiments in the dissociative recombination of xenon and krypton". FIU Digital Commons, 2005. http://digitalcommons.fiu.edu/etd/3288.
Pełny tekst źródłaKhammang, Alex. "Investigating Mechanical Properties of Metallic Nanowires using Molecular Dynamics". VCU Scholars Compass, 2014. http://scholarscompass.vcu.edu/etd/3409.
Pełny tekst źródłaKsiążki na temat "ESD physics"
Voldman, Steven Howard. ESD Physics and Devices. New York: John Wiley & Sons, Ltd., 2005.
Znajdź pełny tekst źródłaCharged device model (CDM) ESD in ICs: Physics, modeling, and circuit simulation. Konstanz: Hartung-Gorre, 2006.
Znajdź pełny tekst źródłaJ, Mergens Markus P. On-chip ESD protection in integrated circuits: Device physics, modeling, circuit simulation. Konstanz: Hartung-Gorre, 2001.
Znajdź pełny tekst źródłaHow experiments end. Chicago: University of Chicago Press, 1987.
Znajdź pełny tekst źródłaSaini, Rakesh. Human hand/metal ESD and its physical simulation. Ottawa: National Library of Canada, 1995.
Znajdź pełny tekst źródłaGalison, Peter Louis. How experiments end. Chicago: University of Chicago Press, 1987.
Znajdź pełny tekst źródłaThe end of time: The next revolution in physics. Oxford: Oxford University Press, 2000.
Znajdź pełny tekst źródłaundifferentiated, David Lindley. The end ofphysics: The myth of a unified theory. New York: BasicBooks, 1993.
Znajdź pełny tekst źródłaSaint-Aubin, Yvan, i Luc Vinet, red. Theoretical Physics at the End of the Twentieth Century. New York, NY: Springer New York, 2002. http://dx.doi.org/10.1007/978-1-4757-3671-7.
Pełny tekst źródłaYvan, Saint-Aubin, i Vinet Luc, red. Theoretical physics at the end of the twentieth century: Lecture notes of the CRM summer school, Banff, Alberta. New York: Springer, 2002.
Znajdź pełny tekst źródłaCzęści książek na temat "ESD physics"
Kolyer, John M., i Donald E. Watson. "Basic Physics". W ESD from A to Z, 3–13. Boston, MA: Springer US, 1996. http://dx.doi.org/10.1007/978-1-4613-1177-5_2.
Pełny tekst źródłaVinson, James E., Joseph C. Bernier, Gregg D. Croft i Juin J. Liou. "Physics and Models of an ESD Event". W ESD Design and Analysis Handbook, 1–64. Boston, MA: Springer US, 2003. http://dx.doi.org/10.1007/978-1-4615-0321-7_1.
Pełny tekst źródłaMeneghini, M., G. Meneghesso i E. Zanoni. "Electrical Properties, Reliability Issues, and ESD Robustness of InGaN-Based LEDs". W Topics in Applied Physics, 197–229. Dordrecht: Springer Netherlands, 2013. http://dx.doi.org/10.1007/978-94-007-5863-6_8.
Pełny tekst źródłaMeneghini, M., G. Meneghesso i E. Zanoni. "Electrical Properties, Reliability Issues, and ESD Robustness of InGaN-Based LEDs". W Topics in Applied Physics, 363–95. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-3755-9_13.
Pełny tekst źródłaIoannou, D. E., Z. Chbili, A. Z. Badwan, Q. Li, Y. Yang i A. A. Salman. "Physics and Design of Nanoscale Field Effect Diodes for Memory and ESD Protection Applications". W Future Trends in Microelectronics, 73–80. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118678107.ch4.
Pełny tekst źródłaSimons, B. D., i A. Altland. "Mesoscopic Physics". W Theoretical Physics at the End of the Twentieth Century, 451–566. New York, NY: Springer New York, 2002. http://dx.doi.org/10.1007/978-1-4757-3671-7_6.
Pełny tekst źródłaWang, Rui-Wu. "The Unity of Life and Physics". W The End of Rationality and Selfishness, 165–82. Singapore: Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-19-9752-5_11.
Pełny tekst źródłaHafemeister, David. "Enhanced End-Use Efficiency". W Physics of Societal Issues, 465–506. New York, NY: Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-9272-6_14.
Pełny tekst źródłaMiyamoto, Kenro. "Open End System". W Plasma Physics for Controlled Fusion, 423–38. Berlin, Heidelberg: Springer Berlin Heidelberg, 2016. http://dx.doi.org/10.1007/978-3-662-49781-4_18.
Pełny tekst źródłaNicholls, David A. "Physical therapies before 1894". W The End of Physiotherapy, 19–41. Abingdon, Oxon; New York, NY: Routledge, 2017. |: Routledge, 2017. http://dx.doi.org/10.4324/9781315561868-2.
Pełny tekst źródłaStreszczenia konferencji na temat "ESD physics"
Khandelwal, S., i D. Bavi. "ASM-ESD – A comprehensive physics-based compact model for ESD Diodes". W 2022 IEEE International Reliability Physics Symposium (IRPS). IEEE, 2022. http://dx.doi.org/10.1109/irps48227.2022.9764453.
Pełny tekst źródłaLin, I.-Cheng, Che-Yuan Jao, Rei-Fu Huang, Cheng-Hsing Chien, Chien-Hui Chuang, Chen-Feng Chiang i Bo-Shih Huang. "Latchup test failure from ESD protection circuit activation beyond ESD stress condition". W 2009 IEEE International Reliability Physics Symposium. IEEE, 2009. http://dx.doi.org/10.1109/irps.2009.5173345.
Pełny tekst źródłaReinvuo, Tuomas, Timo Tarvainen i Toni Viheriakoski. "Simulation and physics of charged board model for ESD". W 2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD). IEEE, 2007. http://dx.doi.org/10.1109/eosesd.2007.4401769.
Pełny tekst źródłaDuvvury, C., R. N. Rountree, H. J. Stiegler, T. Polgreen i D. Corum. "ESD Phenomena in Graded Junction Devices". W 27th International Reliability Physics Symposium. IEEE, 1989. http://dx.doi.org/10.1109/irps.1989.363364.
Pełny tekst źródłaDuvvury, Charvaka. "Paradigm shift in ESD qualification". W 2008 IEEE International Reliability Physics Symposium (IRPS). IEEE, 2008. http://dx.doi.org/10.1109/relphy.2008.4558855.
Pełny tekst źródłaYen, Cheng-Cheng, i Ming-Dou Ker. "Failure of On-Chip Power-Rail ESD Clamp Circuits During System-Level ESD Test". W 2007 IEEE International Reliability Physics Symposium Proceedings. IEEE, 2007. http://dx.doi.org/10.1109/relphy.2007.369969.
Pełny tekst źródłaLin, D. L. "Thermal Breakdown of VLSI by ESD Pulses". W 28th International Reliability Physics Symposium. IEEE, 1990. http://dx.doi.org/10.1109/irps.1990.363534.
Pełny tekst źródłaAur, S., A. Chatterjee i T. Polgreen. "Hot Electron Reliability and ESD Latent Damage". W 26th International Reliability Physics Symposium. IEEE, 1988. http://dx.doi.org/10.1109/irps.1988.362193.
Pełny tekst źródłaFong, Y., i C. Hu. "Internal ESD Transients in Input Protection Circuits". W 27th International Reliability Physics Symposium. IEEE, 1989. http://dx.doi.org/10.1109/irps.1989.363365.
Pełny tekst źródłaGossner, H., i J. Schneider. "Novel devices in ESD protection". W 2007 International Workshop on Physics of Semiconductor Devices. IEEE, 2007. http://dx.doi.org/10.1109/iwpsd.2007.4472458.
Pełny tekst źródłaRaporty organizacyjne na temat "ESD physics"
Matthews, W. Internet end-to-end performance monitoring for the High Energy Nuclear and Particle Physics community. Office of Scientific and Technical Information (OSTI), luty 2000. http://dx.doi.org/10.2172/753304.
Pełny tekst źródłaBaldin, Boris, i Lou DalMonte. Scintillation counter and wire chamber front end modules for high energy physics experiments. Office of Scientific and Technical Information (OSTI), styczeń 2011. http://dx.doi.org/10.2172/1005351.
Pełny tekst źródłaBlack, Kevin. Exotic Physics with the Top Quark at the LHC. End of grant report. Office of Scientific and Technical Information (OSTI), lipiec 2013. http://dx.doi.org/10.2172/1088779.
Pełny tekst źródłaTywoniak, Jan, Kateřina Sojková i Zdenko Malík. Building Physics in Living Lab. Department of the Built Environment, 2023. http://dx.doi.org/10.54337/aau541565072.
Pełny tekst źródłaPerdigão, Rui A. P. Earth System Dynamic Intelligence - ESDI. Meteoceanics, kwiecień 2021. http://dx.doi.org/10.46337/esdi.210414.
Pełny tekst źródłaZhang, Fan, Ying Zhang, Liuyan Huang i Wenqin Zhou. Interventions for promoting physical activity in patients with end stage renal disease receiving hemodialysis. INPLASY - International Platform of Registered Systematic Review Protocols, marzec 2020. http://dx.doi.org/10.37766/inplasy2020.3.0013.
Pełny tekst źródłaBretherton, Christopher, Po-Lun Ma i Peter Caldwell. Transforming ESM Physical Parameterization Development Using Machine Learning Trained on Global Cloud-Resolving Models and Process Observations. Office of Scientific and Technical Information (OSTI), kwiecień 2021. http://dx.doi.org/10.2172/1769790.
Pełny tekst źródłaPerdigão, Rui A. P. Beyond Quantum Security with Emerging Pathways in Information Physics and Complexity. Synergistic Manifolds, czerwiec 2022. http://dx.doi.org/10.46337/220602.
Pełny tekst źródłaSecond Physical Activity Almanac. Chair Andrea Ramírez Varela. Ediciones Uniandes, listopad 2021. http://dx.doi.org/10.51572/202102.
Pełny tekst źródłaSharp, Jeremy, Locke Williams, Duncan Bryant, Jake Allgeier, Kevin Pigg, Gary Bell i Dana Moses. Rough River Outlet Works physical model study. Engineer Research and Development Center (U.S.), czerwiec 2021. http://dx.doi.org/10.21079/11681/41043.
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