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Artykuły w czasopismach na temat „Esaki Tunneling”

Autor: Grafiati

Data publikacji: 6 września 2023

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1

Wang, Peng-Fei, Thomas Nirschl, Doris Schmitt-Landsiedel i Walter Hansch. "Simulation of the Esaki-tunneling FET". Solid-State Electronics 47, nr 7 (lipiec 2003): 1187–92. http://dx.doi.org/10.1016/s0038-1101(03)00045-5.

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2

Lee, Jun-Ho, Inchul Choi, Nae Bong Jeong, Minjeong Kim, Jaeho Yu, Sung Ho Jhang i Hyun-Jong Chung. "Simulation of Figures of Merit for Barristor Based on Graphene/Insulator Junction". Nanomaterials 12, nr 17 (31.08.2022): 3029. http://dx.doi.org/10.3390/nano12173029.

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We investigated the tunneling of graphene/insulator/metal heterojunctions by revising the Tsu–Esaki model of Fowler–Nordheim tunneling and direct tunneling current. Notably, the revised equations for both tunneling currents are proportional to V3, which originates from the linear dispersion of graphene. We developed a simulation tool by adopting revised tunneling equations using MATLAB. Thereafter, we optimized the device performance of the field-emission barristor by engineering the barrier height and thickness to improve the delay time, cut-off frequency, and power-delay product.

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3

Perraud, S., C. David i Z. Z. Wang. "Nanomeasure of Esaki Negative Resistance on p-Type GaAs(110) Surfaces". Solid State Phenomena 121-123 (marzec 2007): 835–38. http://dx.doi.org/10.4028/www.scientific.net/ssp.121-123.835.

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At the (110) cleaved surfaces of p-type GaAs with degenerate doping level, the negative differential resistance (NDR) inside of the band gap was observed in scanning tunneling spectra (STS) measurement. The origin of the NDR was found to be the voltage dependence of the transmission coefficient through the double tunneling barrier, a phenomenon similar to that reported by Esaki and Stiles in planar metal-insulator-semiconductor tunnel junctions.

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4

Hansch, W., C. Fink, J. Schulze i I. Eisele. "A vertical MOS-gated Esaki tunneling transistor in silicon". Thin Solid Films 369, nr 1-2 (lipiec 2000): 387–89. http://dx.doi.org/10.1016/s0040-6090(00)00896-8.

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5

Bandara, K. M. S. V., i D. D. Coon. "Derivation and correction of the Tsu–Esaki tunneling current formula". Journal of Applied Physics 66, nr 2 (15.07.1989): 693–96. http://dx.doi.org/10.1063/1.343539.

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6

Tuomisto, Noora, Sebastiaan van Dijken i Martti Puska. "Tsu-Esaki modeling of tunneling currents in ferroelectric tunnel junctions". Journal of Applied Physics 122, nr 23 (21.12.2017): 234301. http://dx.doi.org/10.1063/1.5001823.

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7

Bandara, K. M. S. V., i D. D. Coon. "Analytic techniques and corrections to the Tsu-Esaki tunneling current". Superlattices and Microstructures 4, nr 6 (styczeń 1988): 697–700. http://dx.doi.org/10.1016/0749-6036(88)90197-8.

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8

Willatzen, Morten, i Zhong Lin Wang. "Contact Electrification by Quantum-Mechanical Tunneling". Research 2019 (4.08.2019): 1–11. http://dx.doi.org/10.34133/2019/6528689.

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A simple model of charge transfer by loss-less quantum-mechanical tunneling between two solids is proposed. The model is applicable to electron transport and contact electrification between e.g. a metal and a dielectric solid. Based on a one-dimensional effective-mass Hamiltonian, the tunneling transmission coefficient of electrons through a barrier from one solid to another solid is calculated analytically. The transport rate (current) of electrons is found using the Tsu-Esaki equation and accounting for different Fermi functions of the two solids. We show that the tunneling dynamics is very sensitive to the vacuum potential versus the two solids conduction-band edges and the thickness of the vacuum gap. The relevant time constants for tunneling and contact electrification, relevant for triboelectricity, can vary over several orders of magnitude when the vacuum gap changes by one order of magnitude, say, 1 Å to 10 Å. Coulomb repulsion between electrons on the left and right material surfaces is accounted for in the tunneling dynamics.

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9

R. Celino, Daniel, Adelcio M de Souza, Caio Luiz Machado Pereira Plazas, Regiane Ragi i Murilo A Romero. "Physics Based RTD Model Accounting for Space Charge and Phonon Scattering Effects". Journal of Integrated Circuits and Systems 17, nr 1 (30.04.2022): 1–8. http://dx.doi.org/10.29292/jics.v17i1.545.

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This paper presents a fully analytical model for the current-voltage (I–V) characteristics of Resonant Tunneling Diodes. Based on Tsu-Esaki formalism, we consider the full electrical potential distribution in the structure, including the space charge regions at the emitter and collector layers. In addition, we account for the scattering suffered by carriers when tunneling through the double-barrier region, as a function of the applied bias voltage. These considerations improve the accuracy of the proposed model when compared with other approaches while keeping it physics based and fully analytical. Finally, the model is validated with experimental and numericaldata, demonstrating its feasibility for applications in circuit simulation environments.

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10

Bizindavyi, Jasper, Anne S. Verhulst, Quentin Smets, Devin Verreck, Bart Soree i Guido Groeseneken. "Band-Tails Tunneling Resolving the Theory-Experiment Discrepancy in Esaki Diodes". IEEE Journal of the Electron Devices Society 6 (2018): 633–41. http://dx.doi.org/10.1109/jeds.2018.2834825.

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11

Schulman, J. N. "Extension of Tsu-Esaki model for effective mass effects in resonant tunneling". Applied Physics Letters 72, nr 22 (czerwiec 1998): 2829–31. http://dx.doi.org/10.1063/1.121471.

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12

Park, Jong Han, i Woo Young Choi. "Esaki-Tunneling-Assisted Tunnel Field-Effect Transistors for Sub-0.7-V Operation". Journal of Nanoscience and Nanotechnology 16, nr 10 (1.10.2016): 10237–40. http://dx.doi.org/10.1166/jnn.2016.13134.

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13

Schenk, A., i S. Sant. "Tunneling between density-of-state tails: Theory and effect on Esaki diodes". Journal of Applied Physics 128, nr 1 (7.07.2020): 014502. http://dx.doi.org/10.1063/5.0008709.

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14

Persson, Olof, James L. Webb, Kimberly A. Dick, Claes Thelander, Anders Mikkelsen i Rainer Timm. "Scanning Tunneling Spectroscopy on InAs–GaSb Esaki Diode Nanowire Devices during Operation". Nano Letters 15, nr 6 (5.05.2015): 3684–91. http://dx.doi.org/10.1021/acs.nanolett.5b00898.

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15

KASPER, E. "STRAINED SILICON GERMANIUM HETEROSTRUCTURES FOR DEVICE APPLICATIONS". International Journal of Modern Physics B 16, nr 28n29 (20.11.2002): 4189–94. http://dx.doi.org/10.1142/s0217979202015054.

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Silicon Germanium is lattice mismatched to Silicon by up to 4.2% depending on the Ge content. Up to a critical thickness elastic strain accommodates the mismatch. The band ordering of SiGe/Si interfaces is strongly influenced by the strain shifting the band ordering from flat conduction band to a type II ordering when proper strain adjustment is performed. As device examples the heterobipolartransistor, hetero field effect transistor and room temperature Esaki tunneling are treated. As key questions for further material development are identified the growth and processing of ultrametastable layers and the strain adjustment by thin virtual substrates.

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16

Einwanger, A., M. Ciorga, U. Wurstbauer, D. Schuh, W. Wegscheider i D. Weiss. "Tunneling anisotropic spin polarization in lateral (Ga,Mn)As/GaAs spin Esaki diode devices". Applied Physics Letters 95, nr 15 (12.10.2009): 152101. http://dx.doi.org/10.1063/1.3247187.

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17

Ciorga, M., A. Einwanger, J. Sadowski, W. Wegscheider i D. Weiss. "Tunneling anisotropic magnetoresistance effect in a p+-(Ga,Mn)As/n+-GaAs Esaki diode". physica status solidi (a) 204, nr 1 (styczeń 2007): 186–90. http://dx.doi.org/10.1002/pssa.200673002.

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18

El Kazzi, S., A. Alireza, C. C. M. Bordallo, Q. Smets, L. Desplanque, X. Wallart, O. Richard i in. "Influence of Doping and Tunneling Interface Stoichiometry on n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki Diode Behavior". ECS Transactions 72, nr 3 (19.05.2016): 73–80. http://dx.doi.org/10.1149/07203.0073ecst.

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19

Prabhudesai, Gaurang, Manoharan Muruganathan, Le The Anh, Hiroshi Mizuta, Masahiro Hori, Yukinori Ono, Michiharu Tabe i Daniel Moraru. "Single-charge band-to-band tunneling via multiple-dopant clusters in nanoscale Si Esaki diodes". Applied Physics Letters 114, nr 24 (17.06.2019): 243502. http://dx.doi.org/10.1063/1.5100342.

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20

Oehme, Michael, Marko Sarlija, Daniel Hahnel, Mathias Kaschel, Jens Werner, E. Kasper i J. Schulze. "Very High Room-Temperature Peak-to-Valley Current Ratio in Si Esaki Tunneling Diodes (March 2010)". IEEE Transactions on Electron Devices 57, nr 11 (listopad 2010): 2857–63. http://dx.doi.org/10.1109/ted.2010.2068395.

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21

Anvarifard, Mohammad K., i Ali A. Orouji. "Enhancement of a Nanoscale Novel Esaki Tunneling Diode Source TFET (ETDS-TFET) for Low-Voltage Operations". Silicon 11, nr 6 (6.12.2018): 2547–56. http://dx.doi.org/10.1007/s12633-018-0043-6.

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22

Giraud, R., M. Gryglas, L. Thevenard, A. Lemaître i G. Faini. "Voltage-controlled tunneling anisotropic magnetoresistance of a ferromagnetic p++-(Ga,Mn)As∕n+-GaAs Zener-Esaki diode". Applied Physics Letters 87, nr 24 (12.12.2005): 242505. http://dx.doi.org/10.1063/1.2137903.

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23

DIETL, TOMASZ. "DILUTED FERROMAGNETIC SEMICONDUCTORS — ORIGIN OF MAGNETIC ORDERING AND SPIN-TRANSPORT PROPERTIES". International Journal of Modern Physics B 22, nr 01n02 (20.01.2008): 104–5. http://dx.doi.org/10.1142/s0217979208046116.

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In the first hour of the lecture the present understanding of the origin of exchange interaction and mechanisms leading to ferromagnetic order in diluted magnetic semiconductors will be presented.1 The lecture will start by discussing energy positions of relevant open magnetic shells, including the correlation energy and excitations within the magnetic ions. The origin and magnitude of sp–d exchange interactions will then be described. This will be followed by presenting the physics of indirect exchange interactions between localized spins contrasting magnetic characteristics in the absence and in the presence of free carriers. The Zener and RKKY models of ferromagnetism will be introduced and the role of confinement, dimensionality, and spin-orbit interaction in determining properties of the ferromagnetic phase will be outlined. The second lecture will be devoted to theory of spin transport in layered structures of diluted ferromagnetic semiconductors, emphasizing the issues important for perspective spintronics devices. A recently developed theory,2 which combines a multi-orbital empirical tight-binding approach with a Landauer–Büttiker formalism will be presented. In contrast to the standard kp method, this theory describes properly the interfaces and inversion symmetry breaking as well as the band dispersion in the entire Brillouin zone, so that the essential for the spin-dependent transport Rashba and Dresselhaus terms as well as the tunneling via k points away from the zone center are taken into account. The applicability of this model for the description of tunneling magnetoresistance (TMR), resonant tunneling spectra, spin-current polarization in Esaki-Zener diodes, and domain-wall resistance will be presented. Note from Publisher: This article contains the abstract only.

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24

Shiogai, J., M. Ciorga, M. Utz, D. Schuh, M. Kohda, D. Bougeard, T. Nojima, D. Weiss i J. Nitta. "In-plane tunneling anisotropic magnetoresistance in (Ga,Mn)As/GaAs Esaki diodes in the regime of the excess current". Applied Physics Letters 106, nr 26 (29.06.2015): 262402. http://dx.doi.org/10.1063/1.4923309.

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25

Yatsun, К. S. "Modification of active region of resonant tunnel diode". Radiotekhnika, nr 205 (2.07.2021): 108–12. http://dx.doi.org/10.30837/rt.2021.2.205.11.

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Interest in the study of mesoscopic structures has grown significantly in recent years. This is primarily due to the development of semiconductor technology, which makes it possible to create structures with sizes of the order of units and tens of nanometers. The linear dimensions of such structures are inferior to the de Broglie wavelength of electrons, so the transport of electrons is determined mainly by their wave properties, which, in turn, leads to a number of new effects. Mesoscopic structures include the resonant tunnel diode (RTD), first proposed by Esaki and Tsu, and which is one of the first nanoelectronic devices. It consists of a semiconductor layer with a fairly narrow band gap, a quantum well (QW) layer located between two semiconductor layers (barriers) with a wider band gap. These layers, in turn, are located between the layers (spacers) of weakly doped narrow semiconductor, followed by highly doped layers of the emitter and collector. There are one or more energy levels of dimensional quantization in the QW. Under the action of bias voltage, the current passes through the RTD only if the emitter contains electrons that can tunnel. Resonant tunneling occurs at the energy level in the QW, and from there to the collector, where the spectrum of energy states is band. RTD has a very high speed of action, for example, it is known that the nonlinear properties of RTD persist up to 104 THz. The RTD is also of great power: it is the only device of nanoelectronics that can be used at room temperatures, and on the VAC of the RTD the areas of negative differential conductivity (NDC) are observed. In this article, the principle of a resonant tunneling diode is revealed, and the phenomena of tunneling in nanophysics are examined in detail. The volt-ampere characteristic (VAC) model of a two-barrier resonance tunnel diode is calculated. The paper investigates how the change of transparency coefficients and the reflection of the potential barrier of a rectangular shape affect the VAC of the RTD. This study can be the basis for further consideration of how the modification of the active region of the resonant tunnel diode affects its characteristics. In addition, the results of the research allow us to estimate qualitatively the energy required by electrons for tunneling through the structure of the RTD.

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26

El Kazzi, S., A. Alian, B. Hsu, A. S. Verhulst, A. Walke, P. Favia, B. Douhard i in. "Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode". Journal of Crystal Growth 484 (luty 2018): 86–91. http://dx.doi.org/10.1016/j.jcrysgro.2017.12.035.

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27

Hou, Wei-Chih, Pao-Chuan Shih, Hao-Hsiung Lin, Barry Bing-Ruey Wu i Jiun-Yun Li. "High Band-to-Band Tunneling Current in InAs/GaSb Heterojunction Esaki Diodes by the Enhancement of Electric Fields Close to the Mesa Sidewalls". IEEE Transactions on Electron Devices 68, nr 8 (sierpień 2021): 3748–54. http://dx.doi.org/10.1109/ted.2021.3086086.

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28

Ciorga, M., A. Einwanger, U. Wurstbauer, D. Schuh, W. Wegscheider i D. Weiss. "In-plane anisotropy of tunneling magnetoresistance and spin polarization in lateral spin injection devices with (Ga,Mn)As/GaAs spin-Esaki diode contacts". Physica E: Low-dimensional Systems and Nanostructures 42, nr 10 (wrzesień 2010): 2673–75. http://dx.doi.org/10.1016/j.physe.2010.04.004.

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29

Zhang, Anni, Guofu Niu, Yiao Li i Andries Scholten. "Compact Modeling of Forward Operation Band-to-Band andTrap-Assisted Tunneling Currents in SiGe HBTs". ECS Meeting Abstracts MA2022-02, nr 32 (9.10.2022): 1201. http://dx.doi.org/10.1149/ma2022-02321201mtgabs.

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Band-to-band tunneling (BTBT) [1] and trap-assisted tunneling (TAT) [2] have been observed in the forward operation base current of SiGe HBTs [3], due to increasing emitter-base junction doping and decreasing bandgap from high Ge mole fraction. At present, a compact model for the BTBT base current in forward operation does not exist. The reverse bias BTBT current is modeled in Mextram for both emitter-base and collector-base junctions. A compact model of the forward TAT base current was developed by our group for wide temperature range operation [4]. In this work, we present a new compact model of BTBT and further develop the TAT compact model of [4] for commercial temperature range application, and demonstrate their effectiveness on SiGe HBTs with around 250 GHz peak fT and fmax. Fig. 1 shows measured IB-VBE characteristics at several temperatures, together with simulation using the latest version of Mextram, 505.3. VCB=0V. At moderate VBE, the IB-VBE slope starts to decrease, similar to high injection effect in diodes, when we know high injection has not occurred as IC-VBE slope remains its low injection value (not shown). Such behavior cannot be modeled with standard base current models. A newly developed neutral-base-recombination (NBR) model introduced in 505.3 is used to fit such high-injection like IB-VBE behavior [5]. In this work we focus on the low VBE regions. At VBE<0.2V, IB first increases, then decreases, exhibiting a negative differential resistance, which is due to BTBT [3]. This BTBT region shows very weak temperature dependence. IB then slowly increases, with a large non-ideality factor of 3.78, which we believe is due to TAT [2] [3] [4]. Note that this should not be confused with the depletion-region recombination current, called IB2 in Mextram [5], with an ideality factor close to 2. The corresponding saturation current in this “TAT” region shows a temperature dependence much weaker than what one expects from the depletion region recombination current as well. Our BTBT model is based on the approach of Esaki [1] and Karlovsky [6], and has a simple functional form: IB,BTBT = kBTBTVBE,btbt(VBE,btbt – VBTBT)2, KBTBT and VBTBT are model parameters that can be extracted from the IB peak position and slope of IB-VBE followed by optimization. VBTBT has a physical meaning of VBTBT =[(Efn-Ec)|n-side+(Ev-Efp)|p-side]/q, with all symbols having their usual meanings in PN junctions. VBE,btbt is a smoothly limited version of VBE for modeling BTBT. When VBE<0, VBE is smoothly limited to 0, i.e. VBE,btbt->0, so that it does not interfere with the existing reverse bias BTBT model. When 0<VBE< VBTBT, VBE,btbt is essentially equal to VBE by design except at the boundaries. When VBE>VBTBT, VBE is smoothly limited to VBTBT, so that the BTBT current decays to zero, as there will be no aligned available states for BTBT. We observe that the BTBT current is insensitive to temperature, consistent with [3], and find that no temperature scaling is necessary for modeling the BTBT current. The TAT current is modeled as ITAT = ISTAT(exp(VBE,tat/VTUN)-1), with VTUN and ISTAT as model parameters [4]. VBE,tat is approximately VBE when VBE>0, and smoothly becomes zero when VBE<0. ISTAT scales with temperature T according to ISTAT,T=ISTAT(T/Tref)1/2exp(kTAT(T-Tref)), where Tref is the reference temperature, and kTAT is a temperature scaling model parameter. VTUN is temperature independent. Fig. 2 shows the 25°C IB-VBE modeling result at low VBE using a linear current scale, to better illustrate the behavior of all IB components at low VBE. Fig. 3 shows a full range view on a logarithmic scale. Fig. 4 shows the modeling results at all four temperatures, with the insert showing the low bias details. Overall the proposed BTBT and TAT models do a good job fitting the forward operation IB-VBE characteristics, with an easy to use formulation, and a small number of model parameters, 2 for BTBT and 3 for TAT. References [1] L. Esaki, Phys. Rev., vol. 109, pp. 604–605, Jan. 1958. [2] A. G. Chynoweth et al., Phys. Rev., vol. 121, pp.684-694, Feb. 1961. [3] D. Lagarde et al., IEEE Electron Device Letters, vol. 27, no. 4, pp. 275-277, April 2006. [4] Z. Xu et al., ECS Transactions, vol. 33, no. 6, pp. 301-310, 2010. [5] G. Niu et al., The Mextram Bipolar Transistor Model Version 505.3.0, 2022. [6] J. Karlovsky, Phys. Rev., vol. 127, pp. 419–419, July 1962. Figure 1

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30

Reuscher, G., G. Landwehr, M. Keim, H. J. Lugauer, F. Fischer i A. Waag. "p+-BeTe/n+-ZnSe ESAKI tunnelling heterojunctions for II-VI optoelectronic devices". Electronics Letters 36, nr 3 (2000): 247. http://dx.doi.org/10.1049/el:20000230.

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Reuscher, G., G. Landwehr, M. Keim, H. J. Lugauer, F. Fischer i A. Waag. "Blue light emitting diode based on p+-BeTe/n+-ZnSe ESAKI tunnelling heterojunction". Electronics Letters 36, nr 12 (2000): 1056. http://dx.doi.org/10.1049/el:20000738.

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32

Gilman, J. M. A., i A. G. O'Neill. "Modelling of resonant interband tunnelling structures as back-back inter-dimensional esaki diodes". Superlattices and Microstructures 14, nr 2-3 (wrzesień 1993): 129–36. http://dx.doi.org/10.1006/spmi.1993.1113.

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Hwang, Wan Sik, Pei Zhao, Sung Geun Kim, Rusen Yan, Gerhard Klimeck, Alan Seabaugh, Susan K. Fullerton-Shirey, Huili Grace Xing i Debdeep Jena. "Room-Temperature Graphene-Nanoribbon Tunneling Field-Effect Transistors". npj 2D Materials and Applications 3, nr 1 (7.11.2019). http://dx.doi.org/10.1038/s41699-019-0127-1.

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Abstract Controlled, tunable, and reversible negative-differential resistance (NDR) is observed in lithographically defined, atomically thin semiconducting graphene nanoribbon (GNR)-gated Esaki diode transistors at room temperature. Sub-10 nm-wide GNRs patterned by electron-beam lithography exhibit semiconducting energy bandgaps of ~0.2 eV extracted by electrical conductance spectroscopy measurements, indicating an atomically thin realization of the electronic properties of conventional 3D narrow-bandgap semiconductors such as InSb. A p–n junction is then formed in the GNR channel by electrostatic doping using graphene side gates, boosted by ions in a solid polymer electrolyte. Transistor characteristics of this gated GNR p–n junction exhibit reproducible and reversible NDR due to interband tunneling of carriers. All essential experimentally observed features are explained by an analytical model and are corroborated by a numerical atomistic simulation. The observation of tunable NDR in GNRs is conclusive proof of the existence of a lithographically defined bandgap and the thinnest possible realization of an Esaki diode. It paves the way for the thinnest scalable manifestation of low-power tunneling field-effect transistors (TFETs).

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Madarang, May Angelu, Rafael Jumar Chu, Yeonhwa Kim, Quang Nhat Dang Lung, Eunkyo Ju, Won Jun Choi i Daehwan Jung. "Thermal degradation comparison of delta-doped GaAs tunnel junctions using Si and Te n-type dopants". AIP Advances 13, nr 4 (1.04.2023). http://dx.doi.org/10.1063/5.0142751.

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Tunnel junctions (TJs) are essential for high-performance multijunction solar cells to act as transparent low resistance paths for carriers to travel between adjacent cells. However, TJs typically exhibit highly degraded tunneling performance due to unwanted dopant out-diffusion during top cell growth. In this study, GaAs TJs with Si and Te delta-doping (δ-doping) were grown via solid source molecular beam epitaxy to investigate the tunneling performance and thermal stability. While Si δ-doped TJs exhibited typical tunneling characteristics with an Esaki peak current density of 173 A/cm2, Te δ-doped TJs revealed 1.5 A/cm2 at Vbias = 100 mV without negative resistance. It was found that the performance degradation after annealing at 600 °C for 90 min was significantly higher for TJs with Si δ-doping than for Te. Secondary ion mass spectroscopy measurements reveal that Te shows no clear signs of dopant diffusion while Si exhibited significant out-diffusion in the active TJ layer after thermal annealing. The superior thermal stability of Te compared to Si proves to be advantageous as an alternative n-type dopant for high temperature and long duration grown multi-junction solar cells.

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35

Liu, Chia‐You, Kai‐Ying Tien, Po‐Yuan Chiu, Yu‐Jui Wu, Yen Chuang, Hsiang‐Shun Kao i Jiun‐Yun Li. "Room Temperature Negative Differential Resistance and High Tunneling Current Density in GeSn Esaki Diodes". Advanced Materials, 27.08.2022, 2203888. http://dx.doi.org/10.1002/adma.202203888.

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36

"Influence of Doping and Tunneling Interface Stoichiometry on n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki Diode Behavior". ECS Meeting Abstracts, 2016. http://dx.doi.org/10.1149/ma2016-01/22/1158.

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Arakawa, T., J. Shiogai, M. Maeda, M. Ciorga, M. Utz, D. Schuh, Y. Niimi i in. "Tunneling mechanism in a (Ga,Mn)As/GaAs-based spin Esaki diode investigated by bias-dependent shot noise measurements". Physical Review B 102, nr 4 (23.07.2020). http://dx.doi.org/10.1103/physrevb.102.045308.

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Li, Shukun, Menglai Lei, Rui Lang, Guo Yu, Huanqing Chen, Peijun Wen, Muhammad Saddique Akbar Khan i in. "Demonstrating the electron blocking effect of AlGaN/GaN superlattice cladding layers in GaN-based laser diodes". Semiconductor Science and Technology, 15.05.2023. http://dx.doi.org/10.1088/1361-6641/acd573.

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Abstract Electronleakage currents seriously limit the power conversion efficiencies (PCEs) of gallium nitride (GaN)-based laser diodes (LDs). To minimize the leakage currents, electron blocking layers (EBLs) are generally applied in the p-type region. However, few works have discussed the electron blocking effect of a p-cladding layer, which is found to be critical in suppressing the leakage currents of an LD. In this work, we compare the blocking performance of single AlGaN p-cladding layers and AlGaN/GaN superlattice (SL) p-cladding layers with the same average Al component respectively. Both light-emitting diodes (LEDs) and LDs with the same epitaxy structures are fabricated. Light-current (L-I) curves and current-voltage (I-V) curves are measured. The latest analytical model of leakage currents is applied to fit the L-I curves of LEDs. Smaller leakage coefficients are observed for the SL structures than the single-layer structures. 80 LDs with different ridge widths are characterized, whose threshold current density, slope efficiencies (SEs), and PCEs are compared. Statistically significant advantages of an SL-based p-cladding layer are demonstrated compared to a single AlGaN layer. The blocking effects of both scattering- and bound-state electrons by SL are investigated. Continuous reflection and thermal relaxation are responsible for the blocking effect of scattering-state electrons. By simulation, the tunneling effect of bound-state electrons through a miniband mechanism is found to be insignificant at a large injection level due to a negative differential conductivity by the Esaki-Tsu effect. We demonstrate a better electron blocking performance of p-cladding layers based on SLs than single AlGaN layers in GaN-based LDs.

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Nagase, Masanori, Tokio Takahashi i Mitsuaki Shimizu. "Enhancement of nonvolatile memory characteristics caused by GaN/AlN resonant tunnelling diodes". Semiconductor Science and Technology, 10.02.2023. http://dx.doi.org/10.1088/1361-6641/acbaf8.

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Abstract This paper reports an enhancement of the nonvolatile memory characteristics of GaN/AlN resonant tunnelling diodes (RTDs) by reducing the crystal defects in the quantum well structure. Pit-shaped crystal defects are strongly suppressed when pure N2, instead of a N2/H2 mixture, is used as a carrier gas and trimethylindium is introduced as a surfactant for metalorganic vapor phase epitaxy of the quantum well structure. In addition, the density of dislocations is lowered by controlling the growth conditions and structure of the buffer layer between a GaN/AlN RTD and a sapphire (0001) substrate. The leakage current through the quantum well structure is lowered, and an extremely high ON/OFF of >1300, which is 20 times higher than the values obtained in previous studies, is induced. Theoretical calculations based on Poisson’s equation and the Tsu–Esaki formula indicate that a high ON/OFF ratio of >103 can be enhanced by increasing the density of electrons accumulating in the quantum well to a level on the order of 1018 cm–3. Furthermore, nonvolatile memory operations were performed by inputting the sequential pulse voltages with a speed of with nanosecond time scale which is faster than speeds of electron release from the crystal defects. These results strongly indicate that the nonvolatile memory characteristics of GaN/AlN RTDs are due to intersubband transitions and electron accumulation in the quantum well and are not attributed to electron trapping by the crystal defects.

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