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Rozprawy doktorskie na temat „Epitaxial Deposition”

Autor: Grafiati

Data publikacji: 6 września 2023

Data aktualizacji: 25 lipca 2025

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1

Thelander, Erik. "Epitaxial Ge-Sb-Te Thin Films by Pulsed Laser Deposition." Doctoral thesis, Universitätsbibliothek Leipzig, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-164106.

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This thesis deals with the synthesis and characterization of Ge-Te-Sb (GST) thin films. The films were deposited using a Pulsed Laser Deposition (PLD) method and mainly characterized with XRD, SEM, AFM and TEM. For amorphous and polycrystalline films, un-etched Si(100) was used. The amorphous films showed a similar crystallization behavior as films deposited with sputtering and evaporation techniques. When depositing GST on un-etched Si(100) substrates at elevated substrate temperatures (130-240°C), polycrystalline but highly textured films were obtained. The preferred growth orientation was

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2

Ryu, Yung-ryel. "Study of epitaxial ZnSe films synthesized by pulsed deposition /." free to MU campus, to others for purchase, 1998. http://wwwlib.umi.com/cr/mo/fullcit?p9901275.

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3

Ye, Liang. "Rapid thermal CVD of epitaxial silicon from dichlorosilane source." Thesis, Queen's University Belfast, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.333849.

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4

Woo, Juhyun. "Growth of epitaxial zirconium carbide layers using pulsed laser deposition." [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0013064.

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Vasilic, Rastko. "Epitaxial growth by monolayer restricted galvanic displacement." Diss., Online access via UMI:, 2006.

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6

Stallcup, Richard E. "Scanning Tunneling Microscopy of Homo-Epitaxial Chemical Vapor Deposited Diamond (100) Films." Thesis, University of North Texas, 2000. https://digital.library.unt.edu/ark:/67531/metadc2446/.

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Atomic resolution images of hot-tungsten filament chemical-vapor-deposition (CVD) grown epitaxial diamond (100) films obtained in ultrahigh vacuum (UHV) with a scanning tunneling microscope (STM) are reported. A (2x1) dimer surface reconstruction and amorphous atomic regions were observed on the hydrogen terminated (100) surface. The (2x1) unit cell was measured to be 0.51"0.01 x 0.25"0.01 nm2. The amorphous regions were identified as amorphous carbon. After CVD growth, the surface of the epitaxial films was amorphous at the atomic scale. After 2 minutes of exposure to atomic hydrogen at 30 To

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7

Zaia, Gilberto Vitor. "Epitaxial growth of Si and 3C-SiC by chemical vapor deposition." [S.l. : s.n.], 2002. http://deposit.ddb.de/cgi-bin/dokserv?idn=966630424.

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8

Nutariya, Jeerapat. "Epitaxial thin film growth of Pt assisted by underpotential deposition phenomena." Thesis, University of Bristol, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.616569.

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Fuel cells as green and sustainable energy sources are at the heart of future Hydrogen Economy. Current research is focused on creating highly active, stable and low content Pt catalysts to improve fuel cell performance up to standards suitable for commercialization. The development of bimetallic Pt structures is the most promising route for achieving this goal. Besides the lower-noble metal content, combination of Pt with other metal at the nano-scale .can result in enhancement of catalytic activity due to the combination of geometric and electronic effects. The main aim of this work is the d

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9

Gower, Aaron E. (Aaron Elwood). "Integrated model-based run-to-run uniformity control for epitaxial silicon deposition." Thesis, Massachusetts Institute of Technology, 2001. http://hdl.handle.net/1721.1/16787.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2001.<br>Also available online at the MIT Theses Online homepage <http://thesis.mit.edu/><br>Includes bibliographical references (p. 241-247).<br>This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.<br>Semiconductor fabrication facilities require an increasingly expensive and integrated set of processes. The bounds on efficiency and repeatability for each process step continue to tighten under

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10

Yamaguchi, Iwao. "Preparation of epitaxial oxide films on sapphire substrates by metal organic deposition." 京都大学 (Kyoto University), 2009. http://hdl.handle.net/2433/124565.

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11

McClure, Adam Marc. "Epitaxial thin film deposition of magnetostrictive materials and its effect on magnetic anisotropy." Diss., Montana State University, 2012. http://etd.lib.montana.edu/etd/2012/mcclure/McClureA0512.pdf.

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Magnetostriction means that the dimensions of a material depend on its magnetization. The primary goal of this dissertation was to understand the effect of magnetostriction on the magnetic anisotropy of single crystal magnetostrictive thin films, where the epitaxial pinning of the material to a substrate could inhibit its conversion to new dimensions. In order to address this goal, several Fe-based binary alloys were deposited onto various substrates by molecular beam epitaxy. The samples were characterized by an array of techniques including electron diffraction, Rutherford backscattering, vi

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12

Shibahara, Kentaro. "EPITAXIAL GROWTH OF SiC BY CHEMICAL VAPOR DEPOSITION AND APPLICATION TO ELECTRONIC DEVICES." Kyoto University, 1988. http://hdl.handle.net/2433/162216.

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13

Wang, Chao-Hsiung. "The growth of thin film epitaxial oxide-metal heterostructures." Thesis, University of Cambridge, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.368667.

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14

Vankova, Viera. "Metalorganic vapour phase epitaxial growth and characterisation of Sb-based semiconductors." Thesis, Nelson Mandela Metropolitan University, 2005. http://hdl.handle.net/10948/d1019678.

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This study focuses on the growth and characterization of epitaxial InAs and InAs1-xSbx. Layers are grown on InAs, GaAs and GaSb substrates by metalorganic vapour phase epitaxy, using trimethylindium, trimethylantimony and arsine as precursors. The growth parameters (V/III ratio, Sb vapour phase compositions) are varied in the temperature range from 500 ºC to 700 ºC, in order to study the influence of these parameters on the structural, optical and electrical properties of the materials. The layers were assessed by X-ray diffraction, electron and optical microscopy, photoluminescence and Hall m

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15

Bouilly, Guillaume Jacques. "Synthesis and characterization of transition metal oxides and oxyhydrides using epitaxial thin films deposition." 京都大学 (Kyoto University), 2015. http://hdl.handle.net/2433/200450.

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16

Patchett, David. "Germanium-tin-silicon epitaxial structures grown on silicon by reduced pressure chemical vapour deposition." Thesis, University of Warwick, 2016. http://wrap.warwick.ac.uk/93459/.

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Crystalline germanium-tin (GeSn) binary alloys have been subject to a significant research effort in recent years. This research effort is motivated by the myriad of potential applications that GeSn alloys offer. Crystalline epitaxial layers of GeSn and silicon-germanium-tin (SiGeSn) have been grown onto Si(001) substrates on a relaxed Ge buffer using reduced pressure CVD and commercially available precursors. X-ray diffraction, transmission electron microscopy, atomic force microscopy, secondary ion mass spectrometry and Raman spectroscopy were used to determine layer composition, layer thick

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17

Chang, Bertha Pi-Ju. "Deposition and planarization of epitaxial oxide thin films for high temperature superconducting device applications." Thesis, Massachusetts Institute of Technology, 1995. http://hdl.handle.net/1721.1/38087.

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18

Borovikov, Valery V. "Multi-scale Simulations of Thin-Film Metal Epitaxial Growth." University of Toledo / OhioLINK, 2008. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1216928358.

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19

Yan, Li. "Two phase magnetoelectric epitaxial composite thin films." Diss., Virginia Tech, 2009. http://hdl.handle.net/10919/30130.

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Magnetoelectricity (ME) is a physical property that results from an exchange between polar (electric dipole) and spin (magnetic dipole) subsystem: i.e., a change in polarization (P) with application of magnetic field (H), or a change in magnetization (M) with applied electric field (E). Magnetoelectricity can be found both in single phase and composite materials. Compared with single phase multiferroic materials, composite multiferroics have higher ME effects. Through a strictive interaction between the piezoelectricity of the ferroelectric phase and the magnetostriction of the ferromagnetic p

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20

Swanson, Kyle. "Epitaxial growth of silicon carbide on on-axis silicon carbide substrates using methyltrichlorosilane chemical vapor deposition." Thesis, Manhattan, Kan. : Kansas State University, 2008. http://hdl.handle.net/2097/719.

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21

Lee, Sam-Dong. "Crystalline properties of gallium oxide thin films epitaxially grown by mist chemical vapor deposition." 京都大学 (Kyoto University), 2016. http://hdl.handle.net/2433/215547.

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22

Hållstedt, Julius. "Integration of epitaxial SiGe(C) layers in advanced CMOS devices." Doctoral thesis, KTH, Mikroelektronik och tillämpad fysik, MAP, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-4498.

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Heteroepitaxial SiGe(C) layers have attracted immense attention as a material for performance boost in state of the art electronic devices during recent years. Alloying silicon with germanium and carbon add exclusive opportunities for strain and bandgap engineering. This work presents details of epitaxial growth using chemical vapor deposition (CVD), material characterization and integration of SiGeC layers in MOS devices. Non-selective and selective epitaxial growth of Si1-x-yGexCy (0≤x≤0.30, 0≤y≤0.02) layers have been performed and optimized aimed for various metal oxide semiconductor field

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23

Souri, Maryam. "ELECTRONIC AND OPTICAL PROPERTIES OF METASTABLE EPITAXIAL THIN FILMS OF LAYERED IRIDATES." UKnowledge, 2018. https://uknowledge.uky.edu/physastron_etds/60.

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The layered iridates such as Sr2IrO4 and Sr3Ir2O7, have attracted substantial attention due to their novel electronic states originating from strong spin-orbit coupling and electron-correlation. Recent studies have revealed the possibilities of novel phases such as topological insulators, Weyl semimetals, and even a potential high-Tc superconducting state with a d-wave gap. However, there are still controversial issues regarding the fundamental electronic structure of these systems: the origin of the insulating gap is disputed as arising either from an antiferromagnetic ordering, i.e. Slater s

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24

Burriel, López Mónica. "Epitaxial Thin Films of Lanthanum Nickel Oxides: Deposition by PI-MOCVD, Structural Characterization and High Temperature Transport Properties." Doctoral thesis, Universitat Autònoma de Barcelona, 2007. http://hdl.handle.net/10803/3246.

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En los últimos años ha habido un interés creciente en el estudio de el compuesto La2NiO4+?, debido a sus propiedades como conductor mixto iónico-electrónico, que lo hacen adecuado para su utilización en dispositivos electroquímicos, tales como cátodo para pilas de combustible de óxido sólido a temperaturas intermedias (IT-SOFC), membranas de permeación o sensores de gas. La estructura de fase La2NiO4+? está formada por láminas de LaNiO3, de tipo perovskita, alternadas con láminas de LaO de tipo cloruro sódico, en las cuales puede incorporarse oxígeno sobreestequiométrico. Esta estructura lamin

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25

Mc, Grath Oran F. K. "Structural and magnetic properties of epitaxial W/Fe/W and Gd/Fe films grown by pulsed laser deposition." Université Joseph Fourier (Grenoble), 1994. http://www.theses.fr/1994GRE10209.

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Le but de cette these est d'etudier les proprietes structurales et magnetiques des couches epitaxiees de w/fe/w et gd/fe elaborees par depot laser pulse. La technique de depot laser pulse est presentee dans le premier chapitre. La croissance des couches minces est discutee dans le deuxieme chapitre puis l'analyse des proprietes structurales des couches elaborees est presentee dans le troisieme chapitre. Une revue des proprietes magnetiques des couches ultra-minces, telle que le moment magnetique, l'anisotropie et les excitations thermiques est presentee dans le quatrieme chapitre. La determina

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26

Burriel, López Mónica. "Epitaxial thin films of lanthanum nickel oxides deposition by PI-MOCVD, structural characterization and high temperature transport properties." Saarbrücken VDM Verlag Dr. Müller, 2007. http://d-nb.info/988631342/04.

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27

Soler, Bru Laia. "Liquid-assisted ultrafast growth of superconducting films derived from chemical solutions." Doctoral thesis, Universitat Autònoma de Barcelona, 2019. http://hdl.handle.net/10803/667208.

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L'ús generalitzat de superconductors d'alta temperatura (HTS) en aplicacions a gran escala està, en part, encara limitat per l’elevat cost de fabricació de cintes recobertes (CCs). Amb la intenció d'aconseguir un avanç important per assolir un major rendiment, en aquesta tesi hem desenvolupat una tècnica innovadora que combina els beneficis de Deposició de Solucions Químiques (CSD) a baix cost amb les altes velocitats del creixement cristal·lí a partir de fases líquides. Es basa en la formació d'un líquid transitori derivat de solucions de carboxilats, aprofitant els obstacles cinètics per la

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28

Miya, Senzo Simo. "Atmospheric pressure metal-organic vapour phase epitaxial growth of InAs/GaSb strained layer superlattices." Thesis, Nelson Mandela Metropolitan University, 2013. http://hdl.handle.net/10948/d1020866.

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The importance of infrared (IR) technology (for detection in the 3-5 μm and 8-14 μm atmospheric windows) has spread from military applications to civilian applications since World War II. The commercial IR detector market in these wavelength ranges is dominated by mercury cadmium telluride (MCT) alloys. The use of these alloys has, however, been faced with technological difficulties. One of the materials that have been tipped to be suitable to replace MCT is InAs/InxGa1-xSb strained layer superlattices (SLS’s). Atmospheric pressure metal-organic vapour phase epitaxy (MOVPE) has been used to gr

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29

J, Boeckl John. "Microstructural investigation of defects in epitaxial GaAs grown on mismatched Ge and SiGe/Si substrates." Connect to this title online, 2005. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1116498970.

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Thesis (Ph. D.)--Ohio State University, 2005.<br>Title from first page of PDF file. Document formatted into pages; contains xxii, 212 p.; also includes graphics. Includes bibliographical references (p. 203-212). Available online via OhioLINK's ETD Center

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30

Smith, Matthew T. "Design And Development Of A Silicon Carbide Chemical Vapor Deposition Reactor." [Tampa, Fla.] : University of South Florida, 2003. http://purl.fcla.edu/fcla/etd/SFE0000145.

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31

Ju, Wentao. "Experimental Investigation of the Epitaxial Lateral Overgrowth of Gallium Nitride and Simulation of Gallium Nitride Metalorganic Chemical Vapor Deposition Process." Ohio : Ohio University, 2003. http://www.ohiolink.edu/etd/view.cgi?ohiou1050589636.

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32

Aouadi, Mohamed-Samir. "Sputter-deposition of epitaxial CdTe and PbTe layers plasma emission spectroscopy of the discharge and photoluminescence spectroscopy of the layers." Thesis, University of Ottawa (Canada), 1989. http://hdl.handle.net/10393/5530.

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Boeckl, John J. "Microstructural investigation of defects in epitaxial GaAs grown on mismatched Ge and SiGe/Si substrates." The Ohio State University, 2005. http://rave.ohiolink.edu/etdc/view?acc_num=osu1116498970.

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34

Yoo, Dongwon. "Growth and Characterization of III-Nitrides Materials System for Photonic and Electronic Devices by Metalorganic Chemical Vapor Deposition." Diss., Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/16220.

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A wide variety of group III-Nitride-based photonic and electronic devices have opened a new era in the field of semiconductor research in the past ten years. The direct and large bandgap nature, intrinsic high carrier mobility, and the capability of forming heterostructures allow them to dominate photonic and electronic device market such as light emitters, photodiodes, or high-speed/high-power electronic devices. Avalanche photodiodes (APDs) based on group III-Nitrides materials are of interest due to potential capabilities for low dark current densities, high sensitivities and high optical g

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35

Gao, Yungeng. "Effect of fluid dynamics and reactor design on the epitaxial growth of gallium nitride on silicon substrate by metalorganic chemical vapor deposition." Ohio : Ohio University, 2000. http://www.ohiolink.edu/etd/view.cgi?ohiou1179171265.

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36

Thelander, Erik [Verfasser], Bernd [Akademischer Betreuer] Rauschenbach, Bernd [Gutachter] Rauschenbach, and Hans-Ulrich [Gutachter] Krebs. "Epitaxial Ge-Sb-Te Thin Films by Pulsed Laser Deposition / Erik Thelander ; Gutachter: Bernd Rauschenbach, Hans-Ulrich Krebs ; Betreuer: Bernd Rauschenbach." Leipzig : Universitätsbibliothek Leipzig, 2015. http://d-nb.info/1239565011/34.

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37

Kwon, Ah-Ram. "Epitaxial Nd-Fe-B films: Growth, texture, magnetism and the influence of mechanical elongation." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-23750.

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The work in this thesis focuses on the preparation of epitaxial Nd-Fe-B thin films using pulsed laser deposition for good hard magnetic properties. They are suitable for a basic understanding of the intrinsic magnetic properties. Compositional control was necessary to achieve phase formation with improved magnetic properties. Nd-Fe-B samples were prepared on single crystal MgO (001) substrates with different buffer layers in order to obtain good textures with different surface morphology. The smooth and continuous epitaxial films were suitable for performing magnetization measurements under st

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38

Maneshian, Mohammad Hassan. "The Influence of Ohmic Metals and Oxide Deposition on the Structure and Electrical Properties of Multilayer Epitaxial Graphene on Silicon Carbide Substrates." Thesis, University of North Texas, 2011. https://digital.library.unt.edu/ark:/67531/metadc68009/.

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Graphene has attracted significant research attention for next generation of semiconductor devices due to its high electron mobility and compatibility with planar semiconductor processing. In this dissertation, the influences of Ohmic metals and high dielectric (high-k) constant aluminum oxide (Al2O3) deposition on the structural and electrical properties of multi-layer epitaxial graphene (MLG) grown by graphitization of silicon carbide (SiC) substrates have been investigated. Uniform MLG was successfully grown by sublimation of silicon from epitaxy-ready, Si and C terminated, 6H-SiC wafers in

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39

Kwon, Ah-Ram. "Epitaxial Nd-Fe-B films: Growth, texture, magnetism and the influence of mechanical elongation." Doctoral thesis, Technische Universität Dresden, 2008. https://tud.qucosa.de/id/qucosa%3A25084.

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The work in this thesis focuses on the preparation of epitaxial Nd-Fe-B thin films using pulsed laser deposition for good hard magnetic properties. They are suitable for a basic understanding of the intrinsic magnetic properties. Compositional control was necessary to achieve phase formation with improved magnetic properties. Nd-Fe-B samples were prepared on single crystal MgO (001) substrates with different buffer layers in order to obtain good textures with different surface morphology. The smooth and continuous epitaxial films were suitable for performing magnetization measurements under st

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40

Wu, Kuan-Ting. "Layered Ruddlesden-Popper Lan+1NinO3n+1 (n = 1, 2 and 3) epitaxial films grown by pulsed laser deposition for potential fuel cell applications." Thesis, Imperial College London, 2014. http://hdl.handle.net/10044/1/23297.

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Layered Ruddlesden-Popper (RP) type La_n+1Ni_nO_{3n+1} (n = 1, 2 and 3) oxides have recently been suggested as candidates for solid oxide fuel cell (SOFC) cathodes. However, the transport properties of the higher order (n = 2 and 3) phases have not been well-understood. The aim of this work is to achieve well-defined epitaxial La_3Ni_2O_{7-δ} and La_4Ni_3O_{10-δ} films deposited by the pulsed laser deposition (PLD) technique in order to fundamentally investigate their intrinsic anisotropic properties for SOFC applications. This research involved PLD target synthesis and PLD deposition for thes

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41

Lyu, Jike. "Epitaxial Ferroelectric Thin Films on Si(001): strain tuning of BaTiO3 and stabilization of polar phase in Hf0.5Zr0.5O2." Doctoral thesis, Universitat Autònoma de Barcelona, 2019. http://hdl.handle.net/10803/667989.

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42

Mukherjee, Devajyoti. "Growth and Characterization of Epitaxial Thin Films and Multiferroic Heterostructures of Ferromagnetic and Ferroelectric Materials." Scholar Commons, 2010. http://scholarcommons.usf.edu/etd/3622.

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Multiferroic materials exhibit unique properties such as simultaneous existence of two or more of coupled ferroic order parameters (ferromagnetism, ferroelectricity, ferroelasticity or their anti-ferroic counterparts) in a single material. Recent years have seen a huge research interest in multiferroic materials for their potential application as high density non-volatile memory devices. However, the scarcity of these materials in single phase and the weak coupling of their ferroic components have directed the research towards multiferroic heterostructures. These systems operate by coupling th

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43

Weng, Xiaorong. "Epitaxial CoxNi1-x nanowires in SrTiO3 matrix : growth, structure and control of magnetic anisotropy." Electronic Thesis or Diss., Sorbonne université, 2019. http://www.theses.fr/2019SORUS418.

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Cette thèse décrit l’étude de l’auto-assemblage de nanofils ferromagnétiques de CoxNi1-x épitaxiés dans une matrice de SrTiO3. Ce système est elaboré par ablation laser pulsé. Profitant du dépôt séquentiel des fils et de la matrice, le diamètre des nanofils est contrôlé dans la gamme de 1,7 à 5,3 nm. En raison du désaccord de paramètre de maille entre les fils et la matrice, les nanofils sont dilatés axialement. Cette déformation décroît lorsque le diamètre des fils augmente, dans la gamme de 2-4%. L'anisotropie magnétique des nanofils résulte de la compétition des anisotropies magnétostatique

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44

Choi, Suk. "Growth and characterization of III-nitride materials for high efficiency optoelectronic devices by metalorganic chemical vapor deposition." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/45823.

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Efficiency droop is a critical issue for the Group III-nitride based light-emitting diodes (LEDs) to be competitive in the general lighting application. Carrier spill-over have been suggested as an origin of the efficiency droop, and an InAlN electron-blocking layer (EBL) is suggested as a replacement of the conventional AlGaN EBL for improved performance of LED. Optimum growth condition of InAlN layer was developed, and high quality InAlN layer was grown by using metalorganic chemical vapor deposition (MOCVD). A LED structure employing an InAlN EBL was grown and its efficiency droop performa

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45

Liu, Pei-Yi, and 劉佩宜. "Reactive Deposition of Epitaxial Cobalt Disilicide." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/30953331759563804551.

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碩士<br>國立清華大學<br>材料科學工程學系<br>98<br>The relatively small lattice mismatch (~ 1.2 %) between CoSi2 and Si and the similarity in crystal structure allow the possibility of growing epitaxial CoSi2 layer on Si. Therefore CoSi2 has a great advantage to be used in semiconductor technology. There are several reported methods in controlling the formation process of epitaxial CoSi2 on Si. And each method has various experimental factors to form different CoSi2 structures. In order to make a systematic understanding on the effect of each experimental factor on the growth of cobalt silicides, nominal thick

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Mei-ChingHuang and 黃美靜. "RF magnetron sputter deposition of BiCuSeO epitaxial films." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/sxa5ep.

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碩士<br>國立成功大學<br>材料科學及工程學系<br>106<br>In this study, we attempted to grow epitaxial BiCuSeO (BCSO) films on (110) and (001) SrTiO3 (STO) substrates as the bottom electrode for the growth of multiferroic BiFeO3 (BFO) films. In our previous attempts, BCSO films of two in-plane orientations were obtained owing to the rapid deposition rate. So, in this work, we used two methods to reduce the rate. One was placing a stainless steel mesh above the substrate in order to scatter the sputtered atoms. Another one was controlling shutter opening time to adjust deposition rate. The films grown with the mesh

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Thelander, Erik. "Epitaxial Ge-Sb-Te Thin Films by Pulsed Laser Deposition." Doctoral thesis, 2014. https://ul.qucosa.de/id/qucosa%3A13245.

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This thesis deals with the synthesis and characterization of Ge-Te-Sb (GST) thin films. The films were deposited using a Pulsed Laser Deposition (PLD) method and mainly characterized with XRD, SEM, AFM and TEM. For amorphous and polycrystalline films, un-etched Si(100) was used. The amorphous films showed a similar crystallization behavior as films deposited with sputtering and evaporation techniques. When depositing GST on un-etched Si(100) substrates at elevated substrate temperatures (130-240°C), polycrystalline but highly textured films were obtained. The preferred growth orientation was

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Wang, Cheng-Kuo, and 王鎮國. "Process Optimization of CVD Epitaxial Deposition Using Modified Genetic Algorithms." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/97649431188973815481.

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碩士<br>國立交通大學<br>控制工程系<br>85<br>A vertical chemical vapor deposition process (CVD) optimization method using modified geneticalgorithms (MGA) has been proposed. Genetic algorithms (GA) are a computational optimization paradigm modeled after biological evolution concept. Strategies such as: elitist with ranking selection reproduction scheme and multiple points crossover are used to raise the search efficiency of the traditional GA. Self-adjusted operator probability not only helps to avoid pr

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Hsiang, Chen-chih, and 項承智. "Epitaxial growth of ZnO by microwave-assisted chemical bath deposition." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/w9pmt8.

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碩士<br>國立交通大學<br>材料科學與工程學系所<br>106<br>Microwave-assisted chemical bath deposition (MWCBD) is a newly developed method for rapid synthesis of single-crystalline ZnO nanorods. In this study, MWCBD was used to synthesize ZnO with high-quality epitaxial ZnO film, using hexahydrate zinc nitrate (Zn(NO3)2∙6H2O) as the Zn2+ source, hexamethylenetetramine (HMT, C6H12N4) as pH buffer, GaN/sapphire as the substrate with small lattice mismatch with ZnO, at temperature less than 100°C. Also, the effect of sodium citrate (Na3C6H5O7) as the capping agent on lateral growth of ZnO rod for continuous film forma

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謝明燈. "Low temperature silicon epitaxial growth by plasma enhanced chemical vapor deposition." Thesis, 1993. http://ndltd.ncl.edu.tw/handle/52684092564705128377.

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