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Gotowe bibliografie tematyczne / EMITTING DIODES

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Gotowa bibliografia na temat „EMITTING DIODES”

Autor: Grafiati

Data publikacji: 11 września 2023

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Artykuły w czasopismach na temat "EMITTING DIODES"

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Salman, RK. "Research note: Light emitting diodes as solar power resources". Lighting Research & Technology 51, nr 3 (19.03.2018): 476–83. http://dx.doi.org/10.1177/1477153518764211.

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This paper investigates the possibility of recycling light emitting diodes from damaged electronic devices, and using them in a similar way to photovoltaic cells in order to reduce environmental pollution. The study used a number of tests with a variety of different parameters for measuring the capability for light emitting diodes to harvest the sun’s rays and to convert them into a useful form of electrical power. The different configurations involved variations of light emitting diode wavelength and number, as well as the connection types between the light emitting diodes (series and parallel) and the angle of incidence of the sun’s rays to the light emitting diode’s base. The results showed promising voltage data for parallel-connected light emitting diodes of lemon (yellow-green) and green colour. The variations in voltage produced by tilting the light emitting diode’s base exhibited similar behaviour to that seen in solar panels. The power that was harvested from the light emitting diodes was extremely low, but the voltage gains showed promising trends that could be employed in useful applications. Hence, light emitting diodes could be re-used to reduce environmental pollution and thus to contribute towards environmental enhancement.

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Bumai, Yurii, Aleh Vaskou i Valerii Kononenko. "Measurement and Analysis of Thermal Parameters and Efficiency of Laser Heterostructures and Light-Emitting Diodes". Metrology and Measurement Systems 17, nr 1 (1.01.2010): 39–45. http://dx.doi.org/10.2478/v10178-010-0004-x.

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Measurement and Analysis of Thermal Parameters and Efficiency of Laser Heterostructures and Light-Emitting DiodesA thermal resistance characterization of semiconductor quantum-well heterolasers in the AlGaInAs-AlGaAs system (λst≈ 0.8 μm), GaSb-based laser diodes (λst≈ 2 μm), and power GaN light-emitting diodes (visible spectral region) was performed. The characterization consists in investigations of transient electrical processes in the diode sources under heating by direct current. The time dependence of the heating temperature of the active region of a source ΔT(t), calculated from direct bias change, is analyzed using a thermalRTCTequivalent circuit (the Foster and Cauer models), whereRTis the thermal resistance andCTis the heat capacity of the source elements and external heat sink. By the developed method, thermal resistances of internal elements of the heterolasers and light-emitting diodes are determined. The dominant contribution of a die attach layer to the internal thermal resistance of both heterolaser sources and light-emitting diodes is observed. Based on the performed thermal characterization, the dependence of the optical power efficiency on current for the laser diodes is determined.

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Feng, XF, W. Xu, QY Han i SD Zhang. "Colour-enhanced light emitting diode light with high gamut area for retail lighting". Lighting Research & Technology 49, nr 3 (19.10.2015): 329–42. http://dx.doi.org/10.1177/1477153515610621.

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Light emitting diodes with high colour quality were investigated to enhance colour appearance and improve observers' preference for the illuminated objects. The spectral power distributions of the light emitting diodes were optimised by changing the ratios of the narrow band red, green and blue light emitting diodes, and the phosphor-converted broad-band light emitting diode to get the desired colour rendering index and high gamut area index. The influence of the light emitting diode light on different coloured fabrics was investigated. The experimental results and the statistical analysis show that by optimising the red, green, blue components the light emitting diode light can affect the colour appearance of the illuminated fabrics positively and make the fabrics appear more vivid and saturated due to the high gamut area index. Observers indicate a high preference for the colours whose saturations are enhanced. The results reveal that the colour-enhanced light emitting diode light source can better highlight products and improve visual impression over the ceramic metal halide lamp and the phosphor-converted light emitting diode light source.

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Muray, Kathleen. "Photometry of diode emitters: light emitting diodes and infrared emitting diodes". Applied Optics 30, nr 16 (1.06.1991): 2178. http://dx.doi.org/10.1364/ao.30.002178.

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Hayes, Clinton J., Kerry B. Walsh i Colin V. Greensill. "Light-emitting diodes as light sources for spectroscopy: Sensitivity to temperature". Journal of Near Infrared Spectroscopy 25, nr 6 (10.10.2017): 416–22. http://dx.doi.org/10.1177/0967033517736164.

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Understanding of light-emitting diode lamp behaviour is essential to support the use of these devices as illumination sources in near infrared spectroscopy. Spectral variation in light-emitting diode peak output (680, 700, 720, 735, 760, 780, 850, 880 and 940 nm) was assessed over time from power up and with variation in environmental temperature. Initial light-emitting diode power up to full intensity occurred within a measurement cycle (12 ms), then intensity decreased exponentially over approximately 6 min, a result ascribed to an increase in junction temperature as current is passed through the light-emitting diode. Some light-emitting diodes displayed start-up output characteristics on their first use, indicating the need for a short light-emitting diode ‘burn in’ period, which was less than 24 h in all cases. Increasing the ambient temperature produced a logarithmic decrease in overall intensity of the light-emitting diodes and a linear shift to longer wavelength of the peak emission. This behaviour is consistent with the observed decrease in the IAD Index (absorbance difference between 670 nm and 720 nm, A670–A720) with increased ambient temperature, as measured by an instrument utilising light-emitting diode illumination (DA Meter). Instruments using light-emitting diodes should be designed to avoid or accommodate the effect of temperature. If accommodating temperature, as light-emitting diode manufacturer specifications are broad, characterisation is recommended.

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Malevskaya A. V., Kalyuzhnyy N. A., Mintairov S. A., Salii R. A., Malevskii D. A., Nakhimovich M. V., Larionov V. R., Pokrovskii P. V., Shvarts M. Z. i Andreev V. M. "High efficiency (EQE=37.5%) infrared (850 nm) light-emitting diodes with Bragg and mirror reflectors". Semiconductors 55, nr 14 (2022): 2166. http://dx.doi.org/10.21883/sc.2022.14.53866.9711.

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Developed and investigated are IR (850 nm) light-emitting diodes based on AlGaAs/Ga(In)As heterostructures grown by the MOCVD technique with multiple quantum wells in the active region and with a double optical reflector consisted of a multilayer Al0.9Ga0.1As/Al0.1Ga0.9As Bragg heterostructure and an Ag mirror layer. Light-emitting diodes with the external quantum efficiency EQE=37.5% at current densities greater than >10 A/cm2 have been fabricated. Keywords: IR light-emitting diode, AlGaAs/GaAs heterostructure, Bragg reflector, InGaAs quantum wells.

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Sherniyozov, А. А., F. A. Shermatova, Sh D. Payziyev, Sh A. Begimkulov, F. M. Kamoliddinov, A. G. Qahhorov i A. G. Aliboyev. "Simulation of physical processes in light-emitting diode pumped lasers". «Узбекский физический журнал» 23, nr 3 (7.12.2021): 38–42. http://dx.doi.org/10.52304/.v23i3.262.

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We have developed an end-to-end simulation model for the light-emitting diode-pumped solidstate laser using the Monte Carlo photon tracing technique. The model considers complete specifics and spectral characteristics of light-emitting diodes. This model is the first of its kind to enable comprehensive analysis of light-emitting diode-pumped laser systems to the best of our knowledge. The model revealed several critical implications, which can be considered in the practical realization of light-emitting diode-pumped lasers.

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Jaafar, NI, A. Sulaiman, S. Moghavvemi, FP Tajudeen i F. Dehdar. "Factors affecting the intention to adopt light-emitting diode lighting at home". Lighting Research & Technology 52, nr 8 (2.04.2020): 1020–39. http://dx.doi.org/10.1177/1477153520915964.

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This study investigates the significant factors affecting the adoption of light emitting diode lighting among households in Malaysia by conceptualizing and extending the unified theory of acceptance and use of technology through the adaptation of price value and the anticipated emotions of pride and guilt within the model. This study used the partial least squares technique to validate measurements and to test the research hypotheses. The results obtained from analysing 1075 valid survey questionnaires revealed the effects of performance expectancy, effort expectancy and price value on the intention to use light-emitting diodes among Malaysian households. While the results support the mediating role of attitude between the three variables and intention to use light-emitting diodes, the moderating role of anticipated pride on the relationship between attitude and intention to use light-emitting diodes was not supported. The findings confirm that guilt significantly moderates the relationship between attitude and intention.

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Malevskaya A. V., Il’inskaya N. D., Kalyuzhnyy N. A., Malevskiy D. A., Zadiranov Y. M., Pokrovskiy P. V., Blokhin A. A. i Andreeva A. V. "Investigation of methods for texturing light-emitting diodes based on AlGaAs/GaAs heterostructures". Semiconductors 56, nr 13 (2022): 2081. http://dx.doi.org/10.21883/sc.2022.13.53906.9679.

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Investigations of methods for texturing the light-emitting surface of IR light-emitting diodes (LEDs) (wavelength 850 nm) based on AlGaAs/GaAs heterostructures with Bragg reflectors have been carried out. Developed were methods of liquid and plasma-chemical etching of solid solution for creating peaks (pyramids) of different form, 0.2-1.5 μm height. Estimation of the effect of texturing methods and also configuration of peaks on the light-emitting diode electroluminescence intensity has been performed. The increase of the electroluminescence intensity by 25% has been achieved. Keywords: light-emitting diode, texturing, etching methods, electroluminescence.

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Lewis, R. B., D. A. Beaton, Xianfeng Lu i T. Tiedje. "light emitting diodes". Journal of Crystal Growth 311, nr 7 (marzec 2009): 1872–75. http://dx.doi.org/10.1016/j.jcrysgro.2008.11.093.

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Rozprawy doktorskie na temat "EMITTING DIODES"

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Stevenson, Stuart G. "Dendrimer light-emitting diodes". Thesis, St Andrews, 2008. http://hdl.handle.net/10023/581.

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Choi, Wai Kit. "Organic light-emitting diodes". HKBU Institutional Repository, 1999. http://repository.hkbu.edu.hk/etd_ra/190.

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Rosenow, Thomas. "White Organic Light Emitting Diodes". Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2011. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-67342.

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Die vorliegende Arbeit beschäftigt sich mit drei Ansätzen der hocheffizienten Erzeugung von weißem Licht mit organischen Leuchtdioden (OLEDs) auf der Basis kleiner Moleküle. Ein Ansatz kombiniert die Emission eines fluoreszenten und zweier phosphoreszenter Emitter in einer einzelnen Emissionsschicht. Da das Triplettniveau des verwendeten Blauemitters niedriger ist als die Triplettniveaus der phosphoreszenten Emitter, werden die Konzentrationen der Emitter so gewählt, dass ein Exzitonenübertrag zwischen ihnen unterbunden wird. Die strahlungslose Rekombination von Tripletts auf dem fluoreszenten Blauemitter begrenzt die Effizienz dieses Ansatzes, jedoch besticht die resultierende weiße OLED durch eine bemerkenswerte Farbstabilität. Der zweite Ansatz basiert auf dem “Triplet Harvesting” Konzept. Ansonsten ungenutzte Triplett Exzitonen werden von einem fluoreszenten Blauemitter auf phosphoreszente Emitter übertragen, wodurch interne Quanteneffizienzen bis zu 100 % möglich sind. Der zur Verfügung stehende Blauemitter 4P-NPD erlaubt aufgrund seines niedrigen Triplettniveaus nicht den Triplett übertrag auf einen grünen Emitter. Daher wird das “Triplet Harvesting” auf zwei unterschiedliche phosphoreszente Emitter, anhand des gelben Emitters Ir(dhfpy)2acac und des roten Emitters Ir(MDQ)2acac untersucht. Es wird gezeigt, dass beide phosphoreszente Emitter indirekt durch Exzitonendiffusion angeregt werden und nicht durch direkte Rekombination von Ladungsträgern auf den Emittermolekülen. Eine genaue Justage der Anregungsverteilung zwischen den phosphoreszenten Emittern ist durch Schichtdickenvariation in der Größenordnung üblicher Schichtdicken möglich. Spätere Produktionsanlagen brauchen daher keinen speziellen Genauigkeitsanforderungen gerecht zu werden. Der dritte und zugleich erfolgreichste Ansatz beruht auf einer Weiterentwicklung des zweiten Ansatzes. Er besteht zunächst darin den Tripletttransfer auf den Übertrag von einem fluoreszenten blauen auf einen phosphoreszenten roten Emitter zu beschränken. Die sich ergebende spektrale Lücke wird durch direktes Prozessieren einer unabhängigen voll phosphoreszenten OLED auf diese erste OLED gefüllt. Verbunden sind beide OLEDs durch eine ladungsträgererzeugende Schicht, in welcher durch das angelegte Feld Elektron/Loch-Paare getrennt werden. Dieser Aufbau entspricht elektrisch der Reihenschaltung zweier OLEDs, welche im Rahmen dieser Arbeit individuell untersucht und optimiert werden. Dabei ergibt sich, dass die Kombination von zwei verschiedenen phosphoreszenten Emittern in einer gemeinsamen Matrix die Ladungsträgerbalance in der Emissionszone sowie die Quanteneffizienz der vollphosphoreszenten OLED stark verbessert. Als Ergebnis steht eine hocheffiziente weiße OLED, welche durch die ausgewogene Emission von vier verschiedenen Emittern farbstabiles Licht mit warm weißen Farbkoordinaten (x, y) = (0.462, 0.429) und ausgezeichneten Farbwiedergabeeigenschaften (CRI = 80.1) erzeugt. Dabei sind die mit diesem Ansatz erreichten Lichtausbeuten (hv = 90.5 lm/W) mit denen von voll phosphoreszenten OLEDs vergleichbar.

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Thomschke, Michael. "Inverted Organic Light Emitting Diodes". Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2013. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-106255.

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This study focuses on the investigation of the key parameters that determine the optical and electrical characteristics of inverted top-emitting organic light emitting diodes (OLED). A co-deposition of small molecules in vacuum is used to establish electrically doped films that are applied in n-i-p layered devices. The knowledge about the functionality of each layer and parameter is important to develop efficient strategies to reach outstanding device performances. In the first part, the thin film optics of top-emitting OLEDs are investigated, focusing on light extraction via cavity tuning, external outcoupling layers (capping layer), and the application of microlens films. Optical simulations are performed to determine the layer configuration with the maximum light extraction efficiency for monochrome phosphorescent devices. The peak efficiency is found at 35%, while varying the thickness of the charge transport layers, the semitransparent anode, and the capping layer simultaneously. Measurements of the spatial light distribution validate, that the capping layer influences the spectral width and the resonance wavelength of the extracted cavity mode, especially for TM polarization. Further, laminated microlens films are applied to benefit from strong microcavity effects in stacked OLEDs by spatial mixing of external and to some extend internal light modes. These findings are used to demonstrate white top-emitting OLEDs on opaque substrates showing power conversion efficiencies up to 30 lm/W and a color rendering index of 93, respectively. In the second part, the charge carrier management of n-i-p layered diodes is investigated as it strongly deviates from that of the p-i-n layered counterparts. The influence of the bottom cathode material and the electron transport layer is found to be negligible in terms of driving voltage, which means that the assumption of an ohmic bottom contact is valid. The hole transport and the charge carrier injection at the anode is much more sensitive to the evaporation sequence, especially when using hole transport materials with a glass transition temperature below 100°C. As a consequence, thermal annealing of fabricated inverted OLEDs is found to drastically improve the device electronics, resulting in lower driving voltages and an increased internal efficiency. The annealing effect on charge transport comes from a reduced charge accumulation due to an altered film morphology of the transport layers, which is proven for electrons and for holes independently. The thermal treatment can further lead to a device degradation. Finally, the thickness and the material of the blocking layers which usually control the charge confinement inside the OLED are found to influence the recombination much more effectively in inverted OLEDs compared to non-inverted ones.

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Gray, Jonathan William. "Resonant cavity light emitting diodes". Thesis, Imperial College London, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.399518.

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Hemingway, Leon Robert. "Dendrimers for light emitting diodes". Thesis, University of Oxford, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.325840.

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Liu, Yee-Chen. "Polymer blend light-emitting diodes". Thesis, University of Cambridge, 2012. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.610709.

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Chen, Chih-Lei. "Processing light-emitting dendrimers for organic light-emitting diodes". Thesis, University of Oxford, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.489420.

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Light-emitting dendrimers with iridium(III) complex cores have given rise to some of the simplest and most efficient organic light-emitting diodes. However, whilst monochrome devices can be prepared there is currently no method for the patterning of the dendrimer films to give rise to pixelated colour displays. The main aim of this project was to develop methodology for the patterning of dendrimer films. In particular, dendrimers are designed that have an oxetane surface group that can be crosslinked to form patterns by a photo-generated acid.

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Najafabadi, Ehsan. "Stacked inverted top-emitting white organic light-emitting diodes". Diss., Georgia Institute of Technology, 2014. http://hdl.handle.net/1853/52990.

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The majority of research on Organic Light-Emitting Diodes (OLEDs) has focused on a top-cathode, conventional bottom-emitting architecture. Yet bottom-cathode, inverted top-emitting OLEDs offer some advantages from an applications point of view. In this thesis, the development of high performance green electroluminescent inverted top-emitting diodes is first presented. The challenges in producing an inverted structure are discussed and the advantages of high efficiency inverted top-emitting OLEDs are provided. Next, the transition to a stacked architecture with separate orange and blue emitting layers is demonstrated, allowing for white emission. The pros and cons of the existing device structure is described, with an eye to future developments and proposed follow-up research.

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Fang, Fang. "Investigation of green light emitting diodes". Thesis, University of Cambridge, 2012. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.610094.

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Książki na temat "EMITTING DIODES"

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Li, Jinmin, i G. Q. Zhang, red. Light-Emitting Diodes. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-99211-2.

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Schubert, E. Fred. Light-Emitting Diodes. Wyd. 2. Leiden: Cambridge University Press, 2006.

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Gillessen, Klaus. Light emitting diodes: An introduction. Englewood Cliffs, N.J: Prentice/Hall International, 1987.

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Dutta Gupta, S., red. Light Emitting Diodes for Agriculture. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-5807-3.

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Adachi, Chihaya, Reiji Hattori, Hironori Kaji i Takatoshi Tsujimura, red. Handbook of Organic Light-Emitting Diodes. Tokyo: Springer Japan, 2020. http://dx.doi.org/10.1007/978-4-431-55761-6.

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Ohtsu, Motoichi. Silicon Light-Emitting Diodes and Lasers. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-42014-1.

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AG, Siemens. Light emitting diodes data sheets 1.94. [München]: Siemens AG, 1994.

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A, Yoshikawa, i International Symposium on Blue Laser and Light Emitting Diodes (1996 : Chiba Daigaku), red. Blue laser and light emitting diodes. Tokyo, Japan: Ohmsha, 1996.

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Subash, T. D., J. Ajayan i Wladek Grabinski. Organic and Inorganic Light Emitting Diodes. Boca Raton: CRC Press, 2023. http://dx.doi.org/10.1201/9781003340577.

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Hall, Joshua T. Light-emitting diodes and optoelectronics: New research. Hauppauge, N.Y: Nova Science Publishers, 2011.

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Części książek na temat "EMITTING DIODES"

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Zhang, Rong, i Xiangqian Xiu. "GaN Substrate Material for III–V Semiconductor Epitaxy Growth". W Light-Emitting Diodes, 1–39. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-99211-2_1.

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Islam, SM, Vladimir Protasenko, Shyam Bharadwaj, Jai Verma, Kevin Lee, Huili (Grace) Xing i Debdeep Jena. "Enhancing Wall-Plug Efficiency for Deep-UV Light-Emitting Diodes: From Crystal Growth to Devices". W Light-Emitting Diodes, 337–95. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-99211-2_10.

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De Santi, Carlo, Desiree Monti, Pradip Dalapati, Matteo Meneghini, Gaudenzio Meneghesso i Enrico Zanoni. "Reliability of Ultraviolet Light-Emitting Diodes". W Light-Emitting Diodes, 397–424. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-99211-2_11.

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Guan, Nan, Xing Dai, François H. Julien, Joël Eymery, Christophe Durant i Maria Tchernycheva. "Nitride Nanowires for Light Emitting Diodes". W Light-Emitting Diodes, 425–84. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-99211-2_12.

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Gu, Ying, Haixia Qiu, Ying Wang, Naiyan Huang i Timon Cheng-Yi Liu. "Light-Emitting Diodes for Healthcare and Well-being". W Light-Emitting Diodes, 485–511. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-99211-2_13.

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He, Dongxian, Toyoki Kozai, Genhua Niu i Xin Zhang. "Light-Emitting Diodes for Horticulture". W Light-Emitting Diodes, 513–47. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-99211-2_14.

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Liu, Ying, Xiaolong Gao i Liang Chi. "The Effect and Mechanism of Light on the Growth, Food Intake, and Gonad Development of Atlantic Salmon (Salmo salar) Reared in RAS". W Light-Emitting Diodes, 549–82. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-99211-2_15.

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Xu, Xiangang, Xiaobo Hu i Xiufang Chen. "SiC Single Crystal Growth and Substrate Processing". W Light-Emitting Diodes, 41–92. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-99211-2_2.

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Xu, Ke, Miao Wang, Taofei Zhou i Jianfeng Wang. "Homoepitaxy of GaN Light-Emitting Diodes". W Light-Emitting Diodes, 93–132. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-99211-2_3.

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Jiang, Fengyi, Jianli Zhang, Qian Sun i Zhijue Quan. "GaN LEDs on Si Substrate". W Light-Emitting Diodes, 133–70. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-99211-2_4.

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Streszczenia konferencji na temat "EMITTING DIODES"

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Dobbertin, Thomas, Daniel Schneider, Anis Kammoun, Jens Meyer, Oliver Werner, Michael Kroeger, Thomas Riedl i in. "Inverted topside-emitting organic light-emitting diodes". W Optical Science and Technology, SPIE's 48th Annual Meeting, redaktorzy Zakya H. Kafafi i Paul A. Lane. SPIE, 2004. http://dx.doi.org/10.1117/12.505811.

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Royo, P., Jean-Francois Carlin, J. Spicher, Ross P. Stanley, Romuald Houdre, Veronique Bardinal, Ursula Oesterle i Marc Ilegems. "High-efficiency top-emitting microcavity light-emitting diodes". W Optoelectronics '99 - Integrated Optoelectronic Devices, redaktorzy E. F. Schubert, Ian T. Ferguson i H. Walter Yao. SPIE, 1999. http://dx.doi.org/10.1117/12.344474.

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3

Kéna-Cohen, Stéphane. "Near and Mid-Infrared Light-Emitting Diodes Based on Solution-Processable Semiconductors". W Optical Devices and Materials for Solar Energy and Solid-state Lighting. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/pvled.2022.pvtu1h.1.

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Streszczenie:

We will discuss recent work aimed at developing efficient infrared light-emitting diodes (LEDs) based on organic semiconductors and black phosphorus (BP). We have realized a fluorescent organic light-emitting diode emitting at λ = 840 nm, with a maximum EQE of 3.8%, which is a record for this class of devices. We have also realized the first BP LED, which emits at λ = 3.7 µm, with an IQE of 1%.

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4

Ma, Biwu. "Blue perovskite light emitting diodes". W Organic and Hybrid Light Emitting Materials and Devices XXV, redaktorzy Tae-Woo Lee, Franky So i Chihaya Adachi. SPIE, 2021. http://dx.doi.org/10.1117/12.2593837.

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5

Khan, M. "Deep Ultraviolet Light Emitting Diodes". W 2006 IEEE LEOS Annual Meeting. IEEE, 2006. http://dx.doi.org/10.1109/leos.2006.278803.

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6

Schubert, E. Fred. "Innovations in light-emitting diodes". W 2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference. IEEE, 2006. http://dx.doi.org/10.1109/cleo.2006.4628169.

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Windisch, Reiner, Maarten Kuijk, Barundeb Dutta, Alexander Knobloch, Peter Kiesel, Gottfried H. Doehler, Gustaaf Borghs i Paul L. Heremans. "Nonresonant-cavity light-emitting diodes". W Symposium on Integrated Optoelectronics, redaktorzy H. Walter Yao, Ian T. Ferguson i E. F. Schubert. SPIE, 2000. http://dx.doi.org/10.1117/12.382829.

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8

Vescan, Lili, i Toma Stoica. "SiGe-based light-emitting diodes". W Optoelectronics '99 - Integrated Optoelectronic Devices, redaktorzy Derek C. Houghton i Eugene A. Fitzgerald. SPIE, 1999. http://dx.doi.org/10.1117/12.342786.

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9

Paetzold, Ralph, Debora Henseler, Karsten Heuser, Wiebke Sarfert, Georg Wittmann i Albrecht Winnacker. "Flexible polymeric light-emitting diodes". W Optical Science and Technology, SPIE's 48th Annual Meeting, redaktorzy Zakya H. Kafafi i Paul A. Lane. SPIE, 2004. http://dx.doi.org/10.1117/12.506835.

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Liang, Eih-Zhe, Ching-Fuh Lin, Ting-Wien Su, Wu-Ping Huang i Hsing-Hung Hsieh. "Light-emitting diodes on Si". W Integrated Optoelectronics Devices, redaktorzy E. Fred Schubert, H. Walter Yao, Kurt J. Linden i Daniel J. McGraw. SPIE, 2003. http://dx.doi.org/10.1117/12.476559.

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Raporty organizacyjne na temat "EMITTING DIODES"

1

Choquette, Kent D., Jr Raftery i James J. Photonic Crystal Light Emitting Diodes. Fort Belvoir, VA: Defense Technical Information Center, styczeń 2006. http://dx.doi.org/10.21236/ada459348.

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2

Singh, Deepika, i Steve Pearton. Deep Ultra-Violet (DUV) Light Emitting Diodes. Fort Belvoir, VA: Defense Technical Information Center, sierpień 2003. http://dx.doi.org/10.21236/ada417107.

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3

Guillermo Bazan i Alexander Mikhailovsky. Surface Plasmon Enhanced Phosphorescent Organic Light Emitting Diodes. Office of Scientific and Technical Information (OSTI), sierpień 2008. http://dx.doi.org/10.2172/1001222.

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4

Lau, Kam Y. Research in Micro--Cavity Surface Emitting Laser Diodes. Fort Belvoir, VA: Defense Technical Information Center, marzec 1996. http://dx.doi.org/10.21236/ada305485.

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5

Yao, H. W., Ian T. Ferguson i E. F. Schubert. Light-Emitting Diodes: Research, Manufacturing, and Applications IV. Fort Belvoir, VA: Defense Technical Information Center, wrzesień 2000. http://dx.doi.org/10.21236/ada384772.

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6

Yamada, Mary, i Dan Chwastyk. Adoption of Light-Emitting Diodes in Common Lighting Applications. Office of Scientific and Technical Information (OSTI), maj 2013. http://dx.doi.org/10.2172/1221117.

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Yamada, Mary, i Kelsey Stober. Adoption of Light-Emitting Diodes in Common Lighting Applications. Office of Scientific and Technical Information (OSTI), lipiec 2015. http://dx.doi.org/10.2172/1374108.

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Campbell, I. H., P. S. Davids i C. M. Heller. Establishing the operational durability of polymer light-emitting diodes. Office of Scientific and Technical Information (OSTI), grudzień 1998. http://dx.doi.org/10.2172/562501.

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Smilgys, Russell V., Neri Shatz i John Bortz. Novel Coatings for Enhancement of Light-Emitting Diodes (LEDs). Fort Belvoir, VA: Defense Technical Information Center, październik 2006. http://dx.doi.org/10.21236/ada458518.

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Elliott, Clay, i Kyung Lee. Adoption of Light-Emitting Diodes in Common Lighting Applications. Office of Scientific and Technical Information (OSTI), sierpień 2020. http://dx.doi.org/10.2172/1669047.

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