Artykuły w czasopismach na temat „Emerging Non-Volatile memories”
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Fujisaki, Yoshihisa. "Overview of emerging semiconductor non-volatile memories". IEICE Electronics Express 9, nr 10 (2012): 908–25. http://dx.doi.org/10.1587/elex.9.908.
Pełny tekst źródłaMelanotte, M., R. Bez i G. Crisenza. "Non volatile memories-status and emerging trends". Microelectronic Engineering 15, nr 1-4 (październik 1991): 603–12. http://dx.doi.org/10.1016/0167-9317(91)90293-m.
Pełny tekst źródłaSi, Mengwei, Huai-Yu Cheng, Takashi Ando, Guohan Hu i Peide D. Ye. "Overview and outlook of emerging non-volatile memories". MRS Bulletin 46, nr 10 (październik 2021): 946–58. http://dx.doi.org/10.1557/s43577-021-00204-2.
Pełny tekst źródłaDieny, B., i Chennupati Jagadish. "Emerging non-volatile memories: magnetic and resistive technologies". Journal of Physics D: Applied Physics 46, nr 7 (1.02.2013): 070301. http://dx.doi.org/10.1088/0022-3727/46/7/070301.
Pełny tekst źródłaFujisaki, Yoshihisa. "Review of Emerging New Solid-State Non-Volatile Memories". Japanese Journal of Applied Physics 52, nr 4R (1.04.2013): 040001. http://dx.doi.org/10.7567/jjap.52.040001.
Pełny tekst źródłaMakarov, Alexander, Viktor Sverdlov i Siegfried Selberherr. "Modeling Emerging Non-volatile Memories: Current Trends and Challenges". Physics Procedia 25 (2012): 99–104. http://dx.doi.org/10.1016/j.phpro.2012.03.056.
Pełny tekst źródłaWang, Yan, Ziyu Lv, Li Zhou, Xiaoli Chen, Jinrui Chen, Ye Zhou, V. A. L. Roy i Su-Ting Han. "Emerging perovskite materials for high density data storage and artificial synapses". Journal of Materials Chemistry C 6, nr 7 (2018): 1600–1617. http://dx.doi.org/10.1039/c7tc05326f.
Pełny tekst źródłaKhan, Mohammad Nasim Imtiaz, Shivam Bhasin, Bo Liu, Alex Yuan, Anupam Chattopadhyay i Swaroop Ghosh. "Comprehensive Study of Side-Channel Attack on Emerging Non-Volatile Memories". Journal of Low Power Electronics and Applications 11, nr 4 (28.09.2021): 38. http://dx.doi.org/10.3390/jlpea11040038.
Pełny tekst źródłaKhan, Mohammad Nasim Imtiaz, i Swaroop Ghosh. "Comprehensive Study of Security and Privacy of Emerging Non-Volatile Memories". Journal of Low Power Electronics and Applications 11, nr 4 (24.09.2021): 36. http://dx.doi.org/10.3390/jlpea11040036.
Pełny tekst źródłaWaser, Rainer. "Emerging Non-Volatile Memories by Exploiting Redox Reactions on the Nanoscale". ECS Transactions 25, nr 7 (17.12.2019): 441–46. http://dx.doi.org/10.1149/1.3203981.
Pełny tekst źródłaA, Ragavi, i Arivasanth M. "Design of Look up Table for Emerging Non Volatile Memories in FRAM". IJIREEICE 5, nr 6 (15.05.2017): 59–65. http://dx.doi.org/10.17148/ijireeice.2017.5610.
Pełny tekst źródłaGolubović, D. S., A. H. Miranda, N. Akil, R. T. F. van Schaijk i M. J. van Duuren. "Vertical poly-Si select pn-diodes for emerging resistive non-volatile memories". Microelectronic Engineering 84, nr 12 (grudzień 2007): 2921–26. http://dx.doi.org/10.1016/j.mee.2007.03.009.
Pełny tekst źródłaWang, L., C. H. Yang i J. Wen. "Physical principles and current status of emerging non-volatile solid state memories". Electronic Materials Letters 11, nr 4 (lipiec 2015): 505–43. http://dx.doi.org/10.1007/s13391-015-4431-4.
Pełny tekst źródłaHakert, Christian, Kuan-Hsun Chen, Horst Schirmeier, Lars Bauer, Paul R. Genssler, Georg von der Brüggen, Hussam Amrouch, Jörg Henkel i Jian-Jia Chen. "Software-Managed Read and Write Wear-Leveling for Non-Volatile Main Memory". ACM Transactions on Embedded Computing Systems 21, nr 1 (31.01.2022): 1–24. http://dx.doi.org/10.1145/3483839.
Pełny tekst źródłaAwais, Muhammad, Feng Zhao i Kuan Yew Cheong. "Bio-Organic Based Resistive Switching Random-Access Memory". Solid State Phenomena 352 (30.10.2023): 85–93. http://dx.doi.org/10.4028/p-tbxv2r.
Pełny tekst źródłaSpassov, D., A. Paskaleva, T. A. Krajewski, E. Guziewicz i G. Luka. "Hole and electron trapping in HfO2/Al2O3 nanolaminated stacks for emerging non-volatile flash memories". Nanotechnology 29, nr 50 (18.10.2018): 505206. http://dx.doi.org/10.1088/1361-6528/aae4d3.
Pełny tekst źródłaWalden, Candace, Devesh Singh, Meenatchi Jagasivamani, Shang Li, Luyi Kang, Mehdi Asnaashari, Sylvain Dubois, Bruce Jacob i Donald Yeung. "Monolithically Integrating Non-Volatile Main Memory over the Last-Level Cache". ACM Transactions on Architecture and Code Optimization 18, nr 4 (31.12.2021): 1–26. http://dx.doi.org/10.1145/3462632.
Pełny tekst źródłaHuang, Shanshi, Xiaoyu Sun, Xiaochen Peng, Hongwu Jiang i Shimeng Yu. "Achieving High In Situ Training Accuracy and Energy Efficiency with Analog Non-Volatile Synaptic Devices". ACM Transactions on Design Automation of Electronic Systems 27, nr 4 (31.07.2022): 1–19. http://dx.doi.org/10.1145/3500929.
Pełny tekst źródłaJafari, Atousa, Christopher Münch i Mehdi Tahoori. "A Spintronic 2M/7T Computation-in-Memory Cell". Journal of Low Power Electronics and Applications 12, nr 4 (6.12.2022): 63. http://dx.doi.org/10.3390/jlpea12040063.
Pełny tekst źródłaHosseini, Fateme S., Fanruo Meng, Chengmo Yang, Wujie Wen i Rosario Cammarota. "Tolerating Defects in Low-Power Neural Network Accelerators Via Retraining-Free Weight Approximation". ACM Transactions on Embedded Computing Systems 20, nr 5s (31.10.2021): 1–21. http://dx.doi.org/10.1145/3477016.
Pełny tekst źródłaTAKAI, Yoshiki, Mamoru FUKUCHI, Chihiro MATSUI, Reika KINOSHITA i Ken TAKEUCHI. "Analysis on Hybrid SSD Configuration with Emerging Non-Volatile Memories Including Quadruple-Level Cell (QLC) NAND Flash Memory and Various Types of Storage Class Memories (SCMs)". IEICE Transactions on Electronics E103.C, nr 4 (1.04.2020): 171–80. http://dx.doi.org/10.1587/transele.2019cdp0006.
Pełny tekst źródłaSharma, Yogesh, Pankaj Misra, Shojan P. Pavunny i Ram S. Katiyar. "Unipolar resistive switching behavior of high-k ternary rare-earth oxide LaHoO3 thin films for non-volatile memory applications". MRS Proceedings 1729 (2015): 23–28. http://dx.doi.org/10.1557/opl.2015.92.
Pełny tekst źródłaIzadpanah, Ramin, Christina Peterson, Yan Solihin i Damian Dechev. "PETRA". ACM Transactions on Architecture and Code Optimization 18, nr 2 (marzec 2021): 1–26. http://dx.doi.org/10.1145/3446391.
Pełny tekst źródłaKamath, Rachana, Parantap Sarkar, Sindhoora Kaniyala Melanthota, Rajib Biswas, Nirmal Mazumder i Shounak De. "Resistive Memory-Switching Behavior in Solution-Processed Trans, trans-1,4-bis-(2-(2-naphthyl)-2-(butoxycarbonyl)-vinyl) Benzene–PVA-Composite-Based Aryl Acrylate on ITO-Coated PET". Polymers 16, nr 2 (12.01.2024): 218. http://dx.doi.org/10.3390/polym16020218.
Pełny tekst źródłaWen, Fei, Mian Qin, Paul Gratz i Narasimha Reddy. "Software Hint-Driven Data Management for Hybrid Memory in Mobile Systems". ACM Transactions on Embedded Computing Systems 21, nr 1 (31.01.2022): 1–18. http://dx.doi.org/10.1145/3494536.
Pełny tekst źródłaReuben, John, Dietmar Fey, Suzanne Lancaster i Stefan Slesazeck. "A Low-Power Ternary Adder Using Ferroelectric Tunnel Junctions". Electronics 12, nr 5 (28.02.2023): 1163. http://dx.doi.org/10.3390/electronics12051163.
Pełny tekst źródłaSaraswat, Vivek, i Udayan Ganguly. "Stochasticity invariance control in Pr1−x Ca x MnO3 RRAM to enable large-scale stochastic recurrent neural networks". Neuromorphic Computing and Engineering 2, nr 1 (28.12.2021): 014001. http://dx.doi.org/10.1088/2634-4386/ac408a.
Pełny tekst źródłaAsad, Arghavan, Mahdi Fazeli, Mohammad Reza Jahed-Motlagh, Mahmood Fathy i Farah Mohammadi. "An Energy-Efficient Reliable Heterogeneous Uncore Architecture for Future 3D Chip-Multiprocessors". Journal of Circuits, Systems and Computers 28, nr 13 (12.03.2019): 1950224. http://dx.doi.org/10.1142/s0218126619502244.
Pełny tekst źródłaChen, An. "(Invited, Digital Presentation) Emerging Materials and Devices for Energy-Efficient Computing". ECS Meeting Abstracts MA2022-01, nr 19 (7.07.2022): 1073. http://dx.doi.org/10.1149/ma2022-01191073mtgabs.
Pełny tekst źródłaRashid Mahmood, Muhammad Imran i Sayyid Kamran Hussain. "Assessment of Network & Processor Virtualization in Cloud Computing". Journal of Computing & Biomedical Informatics 2, nr 01 (15.03.2021): 111–27. http://dx.doi.org/10.56979/201/2021/26.
Pełny tekst źródłaAhmed, Soyed Tuhin, Kamal Danouchi, Michael Hefenbrock, Guillaume Prenat, Lorena Anghel i Mehdi B. Tahoori. "SpinBayes: Algorithm-Hardware Co-Design for Uncertainty Estimation Using Bayesian In-Memory Approximation on Spintronic-Based Architectures". ACM Transactions on Embedded Computing Systems 22, nr 5s (9.09.2023): 1–25. http://dx.doi.org/10.1145/3609116.
Pełny tekst źródłaFeng, Guangdi, Qiuxiang Zhu, Xuefeng Liu, Luqiu Chen, Xiaoming Zhao, Jianquan Liu, Shaobing Xiong i in. "A ferroelectric fin diode for robust non-volatile memory". Nature Communications 15, nr 1 (13.01.2024). http://dx.doi.org/10.1038/s41467-024-44759-5.
Pełny tekst źródłaPiccinini, Enrico. "Editorial: Emerging non-volatile memories and beyond: From fundamental physics to applications". Frontiers in Physics 10 (13.09.2022). http://dx.doi.org/10.3389/fphy.2022.1006756.
Pełny tekst źródłaSivakumar, S., John Jose i Vijaykrishnan Narayanan. "Enhancing Lifetime and Performance of MLC NVM Caches using Embedded Trace buffers". ACM Transactions on Design Automation of Electronic Systems, 16.04.2024. http://dx.doi.org/10.1145/3659102.
Pełny tekst źródłaJangra, Payal, i Manoj Duhan. "Performance-based comparative study of existing and emerging non-volatile memories: a review". Journal of Optics, 23.12.2022. http://dx.doi.org/10.1007/s12596-022-01058-w.
Pełny tekst źródłaKhurana, Geetika, Nitu Kumar, Manish Chhowalla, James F. Scott i Ram S. Katiyar. "Non-Polar and Complementary Resistive Switching Characteristics in Graphene Oxide devices with Gold Nanoparticles: Diverse Approach for Device Fabrication". Scientific Reports 9, nr 1 (22.10.2019). http://dx.doi.org/10.1038/s41598-019-51538-6.
Pełny tekst źródłaYang, Fang, Hong Kuan Ng, Xin Ju, Weifan Cai, Jing Cao, Dongzhi Chi, Ady Suwardi i in. "Emerging Opportunities for Ferroelectric Field‐Effect Transistors: Integration of 2D Materials". Advanced Functional Materials, luty 2024. http://dx.doi.org/10.1002/adfm.202310438.
Pełny tekst źródłaAmouroux, J., V. Della Marca, E. Petit, D. Deleruyelle, M. Putero, Ch Muller, P. Boivin i in. "Growth and In-line Characterization of Silicon Nanodots Integrated in Discrete Charge Trapping Non-volatile Memories". MRS Proceedings 1337 (2011). http://dx.doi.org/10.1557/opl.2011.975.
Pełny tekst źródłaPuglisi, Francesco Maria, Tommaso Zanotti i Paolo Pavan. "Optimized Synthesis Method for Ultra-Low Power Multi-Input Material Implication Logic With Emerging Non-Volatile Memories". IEEE Transactions on Circuits and Systems I: Regular Papers, 2021, 1–11. http://dx.doi.org/10.1109/tcsi.2021.3079986.
Pełny tekst źródłaRyu, Hojoon, Haonan Wu, Fubo Rao i Wenjuan Zhu. "Ferroelectric Tunneling Junctions Based on Aluminum Oxide/ Zirconium-Doped Hafnium Oxide for Neuromorphic Computing". Scientific Reports 9, nr 1 (grudzień 2019). http://dx.doi.org/10.1038/s41598-019-56816-x.
Pełny tekst źródłaYin, Shong, Steven K. Volkman i Vivek Subramanian. "Solution Processed Silver Sulfide Filament Memories". MRS Proceedings 1113 (2008). http://dx.doi.org/10.1557/proc-1113-f02-09.
Pełny tekst źródłaNagarajan, Karthikeyan, Mohammad Nasim Imtiaz Khan i Swaroop Ghosh. "ENTT/ENTTR: A Family of Improved Emerging NVM-Based Trojan Triggers and Resets". Frontiers in Nanotechnology 4 (20.04.2022). http://dx.doi.org/10.3389/fnano.2022.822017.
Pełny tekst źródłaShen, Yang, He Tian, Yanming Liu, Fan Wu, Zhaoyi Yan, Thomas Hirtz, Xuefeng Wang i Tian-Ling Ren. "Modeling of Gate Tunable Synaptic Device for Neuromorphic Applications". Frontiers in Physics 9 (24.12.2021). http://dx.doi.org/10.3389/fphy.2021.777691.
Pełny tekst źródłaParra, Jorge, Juan Navarro-Arenas, Miroslavna Kovylina i Pablo Sanchis. "Impact of GST thickness on GST-loaded silicon waveguides for optimal optical switching". Scientific Reports 12, nr 1 (13.06.2022). http://dx.doi.org/10.1038/s41598-022-13848-0.
Pełny tekst źródłaRietz, Vincent, Christopher Münch, Mahta Mayahinia i Mehdi Tahoori. "Timing-accurate simulation framework for NVM-based compute-in-memory architecture exploration". it - Information Technology, 3.05.2023. http://dx.doi.org/10.1515/itit-2023-0019.
Pełny tekst źródłaChen, Bo, Chengcheng Wang, Xuepeng Zhan, Shuhao Wu, Lu Tai, Junyao Mei, Jixuan Wu i Jiezhi Chen. "Sub-10nm HfZrO ferroelectric synapse with multiple layers and different ratios for neuromorphic computing". Nanotechnology, 19.09.2023. http://dx.doi.org/10.1088/1361-6528/acfb0c.
Pełny tekst źródłade Moura, Rafael Fão, João Paulo Cardoso de Lima i Luigi Carro. "Data and Computation Reuse in CNNs using Memristor TCAMs". ACM Transactions on Reconfigurable Technology and Systems, 20.07.2022. http://dx.doi.org/10.1145/3549536.
Pełny tekst źródłaVerma, Gaurav, Sandeep Soni, Arshid Nisar Laway i Brajesh Kumar Kaushik. "Multi-bit MRAM based high performance neuromorphic accelerator for image classification". Neuromorphic Computing and Engineering, 20.02.2024. http://dx.doi.org/10.1088/2634-4386/ad2afa.
Pełny tekst źródłaAhmed, Soyed Tuhin, Mahta Mayahinia, Michael Hefenbrock, Christopher Münch i Mehdi B. Tahoori. "Design-Time Reference Current Generation for Robust Spintronic-Based Neuromorphic Architecture". ACM Journal on Emerging Technologies in Computing Systems, 27.09.2023. http://dx.doi.org/10.1145/3625556.
Pełny tekst źródłaChen, Lei, Jiacheng Zhao, Chenxi Wang, Ting Cao, John Zigman, Haris Volos, Onur Mutlu i in. "Unified Holistic Memory Management Supporting Multiple Big Data Processing Frameworks over Hybrid Memories". ACM Transactions on Computer Systems, 4.02.2022. http://dx.doi.org/10.1145/3511211.
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