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Gotowe bibliografie tematyczne / Electronic Properties - Exotic Transition Metal Oxides

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Gotowa bibliografia na temat „Electronic Properties - Exotic Transition Metal Oxides”

Autor: Grafiati

Data publikacji: 7 września 2023

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Artykuły w czasopismach na temat "Electronic Properties - Exotic Transition Metal Oxides"

1

Hattori, Azusa N., Ai I. Osaka, Ken Hattori, et al. "Investigation of Statistical Metal-Insulator Transition Properties of Electronic Domains in Spatially Confined VO2 Nanostructure." Crystals 10, no. 8 (2020): 631. http://dx.doi.org/10.3390/cryst10080631.

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Functional oxides with strongly correlated electron systems, such as vanadium dioxide, manganite, and so on, show a metal-insulator transition and an insulator-metal transition (MIT and IMT) with a change in conductivity of several orders of magnitude. Since the discovery of phase separation during transition processes, many researchers have been trying to capture a nanoscale electronic domain and investigate its exotic properties. To understand the exotic properties of the nanoscale electronic domain, we studied the MIT and IMT properties for the VO2 electronic domains confined into a 20 nm l

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ALONSO, J. A., M. J. MARTÍNEZ-LOPE, C. DE LA CALLE, et al. "HIGH-PRESSURE SYNTHESIS AND CHARACTERIZATION OF NEW METASTABLE OXIDES." Functional Materials Letters 04, no. 04 (2011): 333–36. http://dx.doi.org/10.1142/s1793604711002123.

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Many transition-metal oxides in elevated valence states [e.g. Mn(V), Co(IV), Ni(III), Cu(III) ] present a metastable character and, given the difficulty of their synthesis, have been relatively little studied. However, they are very interesting materials presenting strong electronic correlations that are bound to exotic properties such as superconductivity, metal behavior, metal–insulator transitions or colossal magnetoresistance. The metastability of these compounds requires special synthesis conditions such as the application of high pressure. In the last years, we have prepared and investig

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3

Merckling, Clement, Islam Ahmed, Tsang Hsuan Tsang, Moloud Kaviani, Jan Genoe, and Stefan De Gendt. "(Invited) Integrated Perovskites Oxides on Silicon: From Optical to Quantum Applications." ECS Meeting Abstracts MA2022-01, no. 19 (2022): 1060. http://dx.doi.org/10.1149/ma2022-01191060mtgabs.

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With the slowing down of Moore’s law, related to conventional scaling of integrated circuits, alternative technologies will require research effort for pushing the limits of new generations of electronic or photonic devices. Perovskite oxides with the ABO3 chemical formula have a very wide range of interesting intrinsic properties such as metal-insulator transition, ferroelectricity, pyroelectricity, piezoelectricity, ferromagnetic and superconductivity. For the integration of such oxides, it is of great interest to combine their properties with traditional electronic, memory and optical devic

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Rodenbücher, Christian, and Kristof Szot. "Electronic Phenomena of Transition Metal Oxides." Crystals 11, no. 3 (2021): 256. http://dx.doi.org/10.3390/cryst11030256.

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Transition metal oxides with ABO3 or BO2 structures have become one of the major research fields in solid state science, as they exhibit an impressive variety of unusual and exotic phenomena with potential for their exploitation in real-world applications [...]

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Ansari, Lida, Paul Hurley, and Farzan Gity. "Two-Dimensional Gallium Selenide (GaSe) Material for Nanoelectronics Application." ECS Meeting Abstracts MA2022-01, no. 12 (2022): 868. http://dx.doi.org/10.1149/ma2022-0112868mtgabs.

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As silicon-based transistors have approached their physical limits, it is urgent to explore alternative materials with a suitable bandgap and high mobility for next generation electronic logic devices. Two‐dimensional (2D) materials have attracted significant attention in the last few years due to their potential exotic transport physics and technological applications in various fields, such as a significant device downscaling for high intensity integration. Recently, a variety of 2D materials have been explored, including graphene [1] and transition metal dichalcogenides (TMDs), e.g., MoS2 [2

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6

Ulstrup, Søren, Jyoti Katoch, Roland J. Koch, et al. "Spatially Resolved Electronic Properties of Single-Layer WS2 on Transition Metal Oxides." ACS Nano 10, no. 11 (2016): 10058–67. http://dx.doi.org/10.1021/acsnano.6b04914.

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Du, Yongping, and Xiangang Wan. "The novel electronic and magnetic properties in 5d transition metal oxides system." Computational Materials Science 112 (February 2016): 416–27. http://dx.doi.org/10.1016/j.commatsci.2015.09.036.

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Wang, Hongxia, Kelvin H. L. Zhang, Jan P. Hofmann, Victor A. de la Peña O'Shea, and Freddy E. Oropeza. "The electronic structure of transition metal oxides for oxygen evolution reaction." Journal of Materials Chemistry A 9, no. 35 (2021): 19465–88. http://dx.doi.org/10.1039/d1ta03732c.

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In this review article, we summarise the key electronic features of transition metal oxides that govern their OER catalytic properties, and how such electronic descriptors are applied for OER electrocatalysts design.

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Chan, Henry, Kiran Sasikumar, Srilok Srinivasan, Mathew Cherukara, Badri Narayanan, and Subramanian K. R. S. Sankaranarayanan. "Machine learning a bond order potential model to study thermal transport in WSe2 nanostructures." Nanoscale 11, no. 21 (2019): 10381–92. http://dx.doi.org/10.1039/c9nr02873k.

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Nanostructures of transition metal di-chalcogenides (TMDCs) exhibit exotic thermal, chemical and electronic properties, enabling diverse applications from thermoelectrics and catalysis to nanoelectronics.

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10

EVARESTOV, R. A., A. KALINKO, A. KUZMIN, M. LOSEV, and J. PURANS. "FIRST-PRINCIPLES LCAO CALCULATIONS ON 5D TRANSITION METAL OXIDES: ELECTRONIC AND PHONON PROPERTIES." Integrated Ferroelectrics 108, no. 1 (2009): 1–10. http://dx.doi.org/10.1080/10584580903323990.

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