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Artykuły w czasopismach na temat „Electroluminescent Devices -Semiconductor Nanocrystals”

Autor: Grafiati

Data publikacji: 7 września 2023

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1

Erdem, Talha, i Hilmi Volkan Demir. "Colloidal nanocrystals for quality lighting and displays: milestones and recent developments". Nanophotonics 5, nr 1 (1.06.2016): 74–95. http://dx.doi.org/10.1515/nanoph-2016-0009.

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AbstractRecent advances in colloidal synthesis of nanocrystals have enabled high-quality high-efficiency light-emitting diodes, displays with significantly broader color gamut, and optically-pumped lasers spanning the whole visible regime. Here we review these colloidal platforms covering the milestone studies together with recent developments. In the review, we focus on the devices made of colloidal quantum dots (nanocrystals), colloidal quantum rods (nanorods), and colloidal quantum wells (nanoplatelets) as well as those of solution processed perovskites and phosphor nanocrystals. The review starts with an introduction to colloidal nanocrystal photonics emphasizing the importance of colloidal materials for light-emitting devices. Subsequently,we continue with the summary of important reports on light-emitting diodes, in which colloids are used as the color converters and then as the emissive layers in electroluminescent devices. Also,we review the developments in color enrichment and electroluminescent displays. Next, we present a summary of important reports on the lasing of colloidal semiconductors. Finally, we summarize and conclude the review presenting a future outlook.

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Zhang, Jing, Lijin Wang, Fei Chen, Aiwei Tang i Feng Teng. "Optical properties of multinary copper chalcogenide semiconductor nanocrystals and their applications in electroluminescent devices". Chinese Science Bulletin 66, nr 17 (9.02.2021): 2162–78. http://dx.doi.org/10.1360/tb-2020-1633.

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Bertoni, Cristina, Diego Gallardo, Steve Dunn, Nikolai Gaponik i Alexander Eychmüller. "Fabrication and characterization of red-emitting electroluminescent devices based on thiol-stabilized semiconductor nanocrystals". Applied Physics Letters 90, nr 3 (15.01.2007): 034107. http://dx.doi.org/10.1063/1.2433030.

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4

Kim, Whi Dong, Dahin Kim, Da-Eun Yoon, Hyeonjun Lee, Jaehoon Lim, Wan Ki Bae i Doh C. Lee. "Pushing the Efficiency Envelope for Semiconductor Nanocrystal-Based Electroluminescence Devices Using Anisotropic Nanocrystals". Chemistry of Materials 31, nr 9 (22.04.2019): 3066–82. http://dx.doi.org/10.1021/acs.chemmater.8b05366.

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5

Jun, Shinae, Eunjoo Jang, Jongjin Park i Jongmin Kim. "Photopatterned Semiconductor Nanocrystals and Their Electroluminescence from Hybrid Light-Emitting Devices". Langmuir 22, nr 6 (marzec 2006): 2407–10. http://dx.doi.org/10.1021/la051756k.

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6

He, Majun, Deren Yang i Dongsheng Li. "Electroluminescence from metal–oxide–semiconductor devices based on erbium silicate nanocrystals and silicon nanocrystals co-embedded in silicon oxide thin films". Journal of Materials Science: Materials in Electronics 32, nr 15 (16.07.2021): 20659–67. http://dx.doi.org/10.1007/s10854-021-06579-x.

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7

Thung, Yi Tian, Zitong Zhang, Fei Yan, Hilmi Volkan Demir i Handong Sun. "Narrow electroluminescence in bromide ligand-capped cadmium chalcogenide nanoplatelets". Applied Physics Letters 120, nr 24 (13.06.2022): 241105. http://dx.doi.org/10.1063/5.0094798.

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Colloidal zinc blende II–VI semiconductor nanoplatelets (NPLs) demonstrate as a promising class of materials for optoelectronic devices due to their unique excitonic characteristics, narrow emission linewidth, and quantum well-structure. Adopting heterostructures for these nanocrystals allows tuning of their optical features and enhances their photostability, photoluminescence (PL), quantum yield (QY), and color purity for further device integration. Exchanging of carboxylate capping ligands on top and bottom [001] facets of CdSe NPLs with halide ligands is an alternative to achieve the aims of spectral tunability and improve surface passivation, but to date there have been no reports on integrating the advantages of halide ligand exchanged CdSe NPLs for device fabrication. In this work, we demonstrate green electroluminescence (EL) of bromide ligand-capped CdSe NPLs as active emitters in an electrically driven light emitting diode (LED) with a low turn-on voltage of 3.0 V. We observed EL emission at 533.1 nm with a narrow linewidth of 19.4 nm, a maximum luminance of 1276 cd/m2, and the highest external quantum efficiency (EQE) of 0.803%. These results highlight the ability of halide ligand exchange in tuning the EL properties of CdSe NPL-LEDs and potential of bromide ligand-capped CdSe NPLs in contributing to the green emission region of NPL-LEDs, demonstrating its potential for future device integration and contribution to a high color rendering index of future NPL displays.

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8

Gautam, Nitendra Kumar, Meera Ramrakhiani, R. K. Kuraria i S. R. Kuraria. "Electroluminescence in Organically Capped Cd_1-xZn_xSe Chalcogenide Nanocrystals". Defect and Diffusion Forum 361 (styczeń 2015): 215–30. http://dx.doi.org/10.4028/www.scientific.net/ddf.361.215.

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Currently there is a great interest in II–VI semiconductor nanoparticles, particularly organically capped soluble particles of cadmium or zinc sulphide and selenide, for their ready to use application in devices. For electroluminescence (EL) devices, it is expected to cover a broad spectrum and to tune various specific colours by preparing Cd1-xZnx Se instead of CdSe and ZnSe. Ternary alloys have composition dependent properties; therefore Cd1-xZnxSe has attracted much attention in the fields of luminescence and optoelectronic devices. It has wide optical band-gap and good stability with respect to environment. In this study, Cd1-xZnxSenanoparticles have been synthesized by using starch as a capping agent through a chemical synthesis route at room temperature. Samples have been prepared varying composition factor ‘x’ in ternary alloy Cd1-xZnxSe. Cubic structure of all has been confirmed by XRD. Crystallite size calculated from XRD was found in the range of 3-5 nm and it was observed that size reduces on increasing Zn content in ternary compound. Optical absorption spectra showed the blue shift in absorption edge with increasing Zn content. Band gap has been obtained by absorption studies and increase in band gap observed on increasing Zn content in the compound. Electroluminescence studies reveal that lower threshold voltage is required for samples with lower ‘x’ value. The Brightness increases on increasing the voltage above threshold voltage and the variation pattern is almost exponential for all samples. The voltage-current curve represents ohmic nature of the EL cell. Impedance was found to increase on increasing ‘x’ value. The increase in EL intensity is faster for higher frequency. EL spectra revealed that light emission is in violet-green region corresponding to band gap for both Cd0.75 Zn 0.25Se and Cd0.5 Zn 0.5Se, with a slight blue shift on increasing Zn content. A ternary system Cd1–xZnxSe, may be engineered better for application purpose by suitably choosing the composition parameter ‘x’.Contents of Paper

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9

Manzoor, K., S. R. Vadera, N. Kumar i T. R. N. Kutty. "Multicolor electroluminescent devices using doped ZnS nanocrystals". Applied Physics Letters 84, nr 2 (12.01.2004): 284–86. http://dx.doi.org/10.1063/1.1639935.

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10

Qiao, Fen. "Semiconductor Nanocrystals for Photovoltaic Devices". Materials Science Forum 852 (kwiecień 2016): 935–38. http://dx.doi.org/10.4028/www.scientific.net/msf.852.935.

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Recently, photovoltaic devices based on colloidal semiconductor nanocrystals (NCs) have attracted a great interest due to their flexible synthesis with tunable band gaps and shape-dependent optical and electronic properties. However, the surface of NCs typically presents long chain with electrically insulating organic ligands, which hinder the device applications for NCs. So the major challenge of NCs for photovoltaic devices application is to decrease the inter NC space and the height of the tunnel barriers among NCs, therefore increase the transport properties of NCs. In this article, recent development of colloidal semiconductor NCs and possible routes for improving transport properties of colloidal NCs were reviewed. Among those methods, the thermal annealing approach provides a simple and cost-effective way to fabricate superlattice and to decrease the inter-space among NCs, which may be used for the preparation of other nanocrystalline superstructure and functional devices.

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11

Yang, Yang. "Polymer Electroluminescent Devices". MRS Bulletin 22, nr 6 (czerwiec 1997): 31–38. http://dx.doi.org/10.1557/s0883769400033601.

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Electroluminescence (EL) is the emission of light generated from the radiative recombination of electrons and holes electrically injected into a luminescent semiconductor. Conventional EL devices are made of inorganic direct-bandgap semiconductors, such as GaAs and InGaAs. Recently EL devices based on conjugated organic small molecules and polymers have attracted increasing attention due to easy fabrication of large areas, unlimited choice of colors, and mechanical flexibility. Potential applications of these organic/polymeric EL devices include backlights for displays, alphanumeric displays, and high-density information displays.Electroluminescence from an organic material was first demonstrated in the 1960s on anthracene crystals by Pope et al. at New York University. Subsequently several other groups also observed this phenomenon in organic crystals and thin films. These organic EL devices had high operating voltages and low quantum efficiency. Consequently they did not attract much attention. In 1987 a breakthrough was made by Tang and VanSlyke at Eastman Kodak who found that by using multilayers of sublimated organic molecules, the operating voltage of the organic EL devices was dramatically reduced and the quantum efficiency was significantly enhanced. This discovery touched off a flurry of research activity, especially in Japan. The Japanese researchers, as welt as the group at Kodak, have since improved the device efficiency and lifetime to meet commercial requirements. This progress is reviewed by Tsutsui in this issue.

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12

Pacifici, D., A. Irrera, G. Franzò, M. Miritello, F. Iacona i F. Priolo. "Erbium-doped Si nanocrystals: optical properties and electroluminescent devices". Physica E: Low-dimensional Systems and Nanostructures 16, nr 3-4 (marzec 2003): 331–40. http://dx.doi.org/10.1016/s1386-9477(02)00615-x.

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13

Yeh, P. H., L. J. Chen, P. T. Liu, D. Y. Wang i T. C. Chang. "Nonvolatile Memory Devices with NiSi2/CoSi2 Nanocrystals". Journal of Nanoscience and Nanotechnology 7, nr 1 (1.01.2007): 339–43. http://dx.doi.org/10.1166/jnn.2007.18032.

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Metal-oxide-semiconductor structures with NiSi2 and CoSi2 nanocrystals embedded in the SiO2 layer have been fabricated. A pronounced capacitance–voltage hysteresis was observed with a memory window about 1 V under low programming voltage. The retention characteristic can be improved by using HfO2 layer as control oxide. The processing of the structure is compatible with the current manufacturing technology of semiconductor industry.

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14

Chouhan, Lata, Sushant Ghimire, Challapalli Subrahmanyam, Tsutomu Miyasaka i Vasudevanpillai Biju. "Synthesis, optoelectronic properties and applications of halide perovskites". Chemical Society Reviews 49, nr 10 (2020): 2869–85. http://dx.doi.org/10.1039/c9cs00848a.

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15

Adachi, D., H. Haze, H. Shirahase, T. Toyama i H. Okamoto. "Blue emitting thin-film electroluminescent devices utilizing Tm-doped ZnS nanocrystals". Journal of Non-Crystalline Solids 352, nr 9-20 (czerwiec 2006): 1628–31. http://dx.doi.org/10.1016/j.jnoncrysol.2006.01.076.

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16

Shin, Seungki, Yoonkyu Kim, Namyoung Gwak, Inyoung Jeong, Minwoo Lee, Kyungwan Kang:, Sooyeon Yeon, Seongchan Kim, Tae Ann Kim i Nuri Oh. "Light-induced crosslinking of perovskite nanocrystals for all-solution-processed electroluminescent devices". Applied Surface Science 608 (styczeń 2023): 155016. http://dx.doi.org/10.1016/j.apsusc.2022.155016.

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17

Horváth, Zs J., i P. Basa. "Nanocrystal Non-Volatile Memory Devices". Materials Science Forum 609 (styczeń 2009): 1–9. http://dx.doi.org/10.4028/www.scientific.net/msf.609.1.

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The physical background and present status of the application of metal-insulator-silicon structures with semiconductor nanocrystals embedded in the insulator layer for memory purposes is breafly summarized.

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18

Toyama, T., K. Yoshimura, M. Fujii, H. Haze i H. Okamoto. "Novel green thin-film electroluminescent devices utilizing ZnS nanocrystals doped with Tb compounds". Applied Surface Science 244, nr 1-4 (maj 2005): 524–27. http://dx.doi.org/10.1016/j.apsusc.2004.10.112.

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19

Peng, Zhiwei, Yuhan Gao i Guohua Xie. "Perovskite Light-Emitting Devices with Doped Hole Transporting Layer". Molecules 26, nr 6 (17.03.2021): 1670. http://dx.doi.org/10.3390/molecules26061670.

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Perovskite quantum dots (PQDs) have drawn global attention in recent years and have been used in a range of semiconductor devices, especially for light-emitting diodes (LEDs). However, because of the nature of low-conductive ligands of PQDs and surface and bulk defects in the devices, charge injection and transport should be carefully managed in order to maximize the electroluminescent performances. In this study, we employed three p-dopants, i.e., 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ), 1,3,4,5,7,8-hexafluoro-11,11,12,12-tetracyanonaphtho-2,6-quinodimethane (F6-TCNNQ), and 11,11,12,12-tetracyanonaphtho-2,6-quinodimethane (TCNH14), respectively doped into the commonly used hole transporting layer (HTL) poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA). Compared with the devices with the neat PTAA, those with the doped PTAA as the HTLs achieved the improved electroluminescent performances. In particular, the device with the strong oxidant F4-TCNQ exhibited an improvement factor of 27% in the peak external quantum efficiency compared with the control device with the neat PTAA. The capacitance and transient electroluminescent measurements were carried out to identify the imperceptible interactions in the doped HTL and at the interface between the HTL and PQDs.

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20

Hsu, Chin-Tsar. "Electroluminescent devices with different insulator/semiconductor interfaces prepared by radio-frequency sputtering". Optical Engineering 32, nr 8 (1993): 1803. http://dx.doi.org/10.1117/12.143991.

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21

Shim, Moonsub, Congjun Wang, David J. Norris i Philippe Guyot-Sionnest. "Doping and Charging in Colloidal Semiconductor Nanocrystals". MRS Bulletin 26, nr 12 (grudzień 2001): 1005–8. http://dx.doi.org/10.1557/mrs2001.257.

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Modern semiconductor technology has been enabled by the ability to control the number of carriers (electrons and holes) that are available in the semiconductor crystal. This control has been achieved primarily with two methods: doping, which entails the introduction of impurity atoms that contribute additional carriers into the crystal lattice; and charging, which involves the use of applied electric fields to manipulate carrier densities near an interface or junction. By controlling the carriers with these methods, the electrical properties of the semiconductor can be precisely tailored for a particular application. Accordingly, doping and charging play a major role in most modern semiconductor devices.

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22

Yu, Buyang, Chunfeng Zhang, Lan Chen, Zhengyuan Qin, Xinyu Huang, Xiaoyong Wang i Min Xiao. "Ultrafast dynamics of photoexcited carriers in perovskite semiconductor nanocrystals". Nanophotonics 10, nr 8 (1.06.2020): 1943–65. http://dx.doi.org/10.1515/nanoph-2020-0681.

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Abstract Perovskite semiconductor nanocrystals have emerged as a promising family of materials for optoelectronic applications including light-emitting diodes, lasers, light-to-electricity convertors and quantum light emitters. The performances of these devices are fundamentally dependent on different aspects of the excited-state dynamics in nanocrystals. Herein, we summarize the recent progress on the photoinduced carrier dynamics studied by a variety of time-resolved spectroscopic methods in perovskite nanocrystals. We review the dynamics of carrier generation, recombination and transport under different excitation densities and photon energies to show the pathways that underpin the photophysics for light-emitting diodes and solar cells. Then, we highlight the up-to-date spin dynamics and coherent exciton dynamics being manifested with the exciton fine levels in perovskite semiconductor nanocrystals which are essential for potential applications in quantum information technology. We also discuss the controversial results and the possible origins yet to be resolved. In-depth study toward a comprehensive picture of the excited-state dynamics in perovskite nanocrystals may provide the key knowledge of the device operation mechanism, enlighten the direction for device optimization and stimulate the adventure of new conceptual devices.

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23

Yamada, Hiroyuki, Junpei Watanabe, Kazuhiro Nemoto, Hong-Tao Sun i Naoto Shirahata. "Postproduction Approach to Enhance the External Quantum Efficiency for Red Light-Emitting Diodes Based on Silicon Nanocrystals". Nanomaterials 12, nr 23 (5.12.2022): 4314. http://dx.doi.org/10.3390/nano12234314.

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Despite bulk crystals of silicon (Si) being indirect bandgap semiconductors, their quantum dots (QDs) exhibit the superior photoluminescence (PL) properties including high quantum yield (PLQY > 50%) and spectral tunability in a broad wavelength range. Nevertheless, their low optical absorbance character inhibits the bright emission from the SiQDs for phosphor-type light emitting diodes (LEDs). In contrast, a strong electroluminescence is potentially given by serving SiQDs as an emissive layer of current-driven LEDs with (Si-QLEDs) because the charged carriers are supplied from electrodes unlike absorption of light. Herein, we report that the external quantum efficiency (EQE) of Si-QLED was enhanced up to 12.2% by postproduction effect which induced by continuously applied voltage at 5 V for 9 h. The active layer consisted of SiQDs with a diameter of 2.0 nm. Observation of the cross-section of the multilayer QLEDs device revealed that the interparticle distance between adjacent SiQDs in the emissive layer is reduced to 0.95 nm from 1.54 nm by “post-electric-annealing”. The shortened distance was effective in promoting charge injection into the emission layer, leading improvement of the EQE.

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24

Roither, J., W. Heiss, N. P. Gaponik, D. V. Talapin i A. Eychmüller. "Colloidally synthesised semiconductor nanocrystals in resonant cavity light emitting devices". Electronics Letters 38, nr 22 (2002): 1373. http://dx.doi.org/10.1049/el:20020890.

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25

Garcia, Emilio, Christophe Arnold, Jean-Pierre Hermier i Michele D'Amico. "Gold plasmonic enhanced luminescence of silica encapsulated semiconductor hetero-nanoplatelets". Nanoscale Advances 3, nr 15 (2021): 4572–78. http://dx.doi.org/10.1039/d1na00273b.

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26

Abulikemu, Mutalifu, Silvano Del Gobbo, Dalaver H. Anjum, Mohammad Azad Malik i Osman M. Bakr. "Colloidal Sb2S3nanocrystals: synthesis, characterization and fabrication of solid-state semiconductor sensitized solar cells". Journal of Materials Chemistry A 4, nr 18 (2016): 6809–14. http://dx.doi.org/10.1039/c5ta09546h.

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Antimony sulfide nanocrystals of various shapes and different phases are synthesized using a colloidal hot-injection method, and the as-prepared nanocrystals are used as a light harvesting material in photovoltaic devices.

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27

Álvarez-Conde, Javier, Eva M. García-Frutos i Juan Cabanillas-Gonzalez. "Organic Semiconductor Micro/Nanocrystals for Laser Applications". Molecules 26, nr 4 (11.02.2021): 958. http://dx.doi.org/10.3390/molecules26040958.

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Organic semiconductor micro/nanocrystals (OSMCs) have attracted great attention due to their numerous advantages such us free grain boundaries, minimal defects and traps, molecular diversity, low cost, flexibility and solution processability. Due to all these characteristics, they are strong candidates for the next generation of electronic and optoelectronic devices. In this review, we present a comprehensive overview of these OSMCs, discussing molecular packing, the methods to control crystallization and their applications to the area of organic solid-state lasers. Special emphasis is given to OSMC lasers which self-assemble into geometrically defined optical resonators owing to their attractive prospects for tuning/control of light emission properties through geometrical resonator design. The most recent developments together with novel strategies for light emission tuning and effective light extraction are presented.

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28

Sledz, Florian, Assegid M. Flatae, Stefano Lagomarsino, Savino Piccolomo, Shannon S. Nicley, Ken Haenen, Robert Rechenberg i in. "Light emission from color centers in phosphorus-doped diamond". EPJ Web of Conferences 266 (2022): 09008. http://dx.doi.org/10.1051/epjconf/202226609008.

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Light emission from color centers in diamond is being extensively investigated for developing, among other quantum devices, single-photon sources operating at room temperature. By doping diamond with phosphorus, one obtains an n-type semiconductor, which can be exploited for the electrical excitation of color centers. Here, we discuss the optical properties of color centers in phosphorus-doped diamond, especially the silicon-vacancy center, presenting the single-photon emission characteristics and the temperature dependence aiming for electroluminescent single-photon emitting devices.

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29

Dalui, Amit, Ali Hossain Khan, Bapi Pradhan, Jayita Pradhan, Biswarup Satpati i Somobrata Acharya. "Facile synthesis of composition and morphology modulated quaternary CuZnFeS colloidal nanocrystals for photovoltaic application". RSC Advances 5, nr 118 (2015): 97485–94. http://dx.doi.org/10.1039/c5ra18157g.

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Pi, Xiaodong. "(Invited, Digital Presentation) Exploring New Applications of Luminescent Silicon Nanocrystals". ECS Meeting Abstracts MA2022-01, nr 20 (7.07.2022): 1078. http://dx.doi.org/10.1149/ma2022-01201078mtgabs.

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The luminescence of silicon nanocrystals (Si NCs) has been traditionally studied for various applications such as light-emitting diodes, solar cells and bioimaging[1]. In the past few years we have started exploring the use of Si NCs for emerging optoelectronic synaptic devices[2,3]. As an important type of optoelectronic synaptic devices, electroluminescent synaptic devices have been fabricated by using Si NCs[4,5]. Under the stimulation of electrical spikes these devices give out electroluminescence that decays in the timeframe of tens of microseconds, enabling a series of synaptic functionalities and logic functions. In addition, we have synthesized Er-hyperdoped Si NCs, which emit light simultaneously at the wavelengths of 830 and 1540 nm. It is found that Er-hyperdoped Si NCs are a powerful ratiometric near-infrared fluorescent platform. The rationmetric near-infrared fluorescence may be well used for temperature sensing, which further enables the construction of logic gates[6]. [1] Z. Y. Ni, et al., Materials Science & Engineering R 138, 85-117 (2019). [2] L. Yin, et al., Nano Letters 20, 5, 3378–3387 (2020). [3] Y. Wang, et al., Advanced Functional Materials 2107973 (2021). [4] S. Y. Zhao, et al., Nano Energy 54, 383-389 (2018) [5] S. Y. Zhao, et al., Science China Materials 62, 1470-1478 (2019) [6] K. Wang, et al., to be submitted.

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Das, K., S. Maikap, A. Dhar, B. K. Mathur i S. K. Ray. "Metal-oxide-semiconductor structure with Ge nanocrystals for memory devices applications". Electronics Letters 39, nr 25 (2003): 1865. http://dx.doi.org/10.1049/el:20031146.

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Hasegawa, Yasuchika. "Magnetic Semiconductor EuO, EuS, and EuSe Nanocrystals for Future Optical Devices". Chemistry Letters 42, nr 1 (5.01.2013): 2–7. http://dx.doi.org/10.1246/cl.2013.2.

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Prezioso, S., S. M. Hossain, A. Anopchenko, L. Pavesi, M. Wang, G. Pucker i P. Bellutti. "Superlinear photovoltaic effect in Si nanocrystals based metal-insulator-semiconductor devices". Applied Physics Letters 94, nr 6 (9.02.2009): 062108. http://dx.doi.org/10.1063/1.3081410.

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Chen, Ya-Ching, Cyuan-Bin Siao, Hong-Shuo Chen, Kuan-Wen Wang i Shu-Ru Chung. "The application of Zn0.8Cd0.2S nanocrystals in white light emitting diodes devices". RSC Advances 5, nr 106 (2015): 87667–71. http://dx.doi.org/10.1039/c5ra15068j.

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In this study, colloidal ternary semiconductor Zn_0.8Cd_0.2S (ZnCdS) nanocrystals (NCs) with wide emission and high quantum yields (QYs) have been prepared and used as nanophosphors in white light emitting diodes (WLEDs).

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Anni, Marco. "Special Issue “II-VI Semiconductor Nanocrystals and Hybrid Polymer–Nanocrystal Systems”". Nanomaterials 11, nr 2 (12.02.2021): 467. http://dx.doi.org/10.3390/nano11020467.

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The continuous need to improve the performance of photonic, electronic and optoelectronic devices has stimulated research toward the development of innovative semiconducting materials which display better properties with respect to standard bulk semiconductors [...]

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Lin, Weyde M. M., Maksym Yarema, Mengxia Liu, Edward Sargent i Vanessa Wood. "Nanocrystal Quantum Dot Devices: How the Lead Sulfide (PbS) System Teaches Us the Importance of Surfaces". CHIMIA International Journal for Chemistry 75, nr 5 (28.05.2021): 398–413. http://dx.doi.org/10.2533/chimia.2021.398.

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Semiconducting thin films made from nanocrystals hold potential as composite hybrid materials with new functionalities. With nanocrystal syntheses, composition can be controlled at the sub-nanometer level, and, by tuning size, shape, and surface termination of the nanocrystals as well as their packing, it is possible to select the electronic, phononic, and photonic properties of the resulting thin films. While the ability to tune the properties of a semiconductor from the atomistic- to macro-scale using solution-based techniques presents unique opportunities, it also introduces challenges for process control and reproducibility. In this review, we use the example of well-studied lead sulfide (PbS) nanocrystals and describe the key advances in nanocrystal synthesis and thin-film fabrication that have enabled improvement in performance of photovoltaic devices. While research moves forward with novel nanocrystal materials, it is important to consider what decades of work on PbS nanocrystals has taught us and how we can apply these learnings to realize the full potential of nanocrystal solids as highly flexible materials systems for functional semiconductor thin-film devices. One key lesson is the importance of controlling and manipulating surfaces.

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Katsaros, G., P. Spathis, M. Stoffel, F. Fournel, M. Mongillo, V. Bouchiat, F. Lefloch, A. Rastelli, O. G. Schmidt i S. De Franceschi. "Hybrid superconductor–semiconductor devices made from self-assembled SiGe nanocrystals on silicon". Nature Nanotechnology 5, nr 6 (2.05.2010): 458–64. http://dx.doi.org/10.1038/nnano.2010.84.

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Suárez Alvarez, Isaac. "Active photonic devices based on colloidal semiconductor nanocrystals and organometallic halide perovskites". European Physical Journal Applied Physics 75, nr 3 (wrzesień 2016): 30001. http://dx.doi.org/10.1051/epjap/2016160151.

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Salafsky, J. S. "A ‘channel’ design using single, semiconductor nanocrystals for efficient (opto)electronic devices". Solid-State Electronics 45, nr 1 (styczeń 2001): 53–58. http://dx.doi.org/10.1016/s0038-1101(00)00193-3.

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Aguilera, A., V. P. Singh i D. C. Morton. "Electron energy distribution at the insulator-semiconductor interface in AC thin film electroluminescent display devices". IEEE Transactions on Electron Devices 41, nr 8 (1994): 1357–63. http://dx.doi.org/10.1109/16.297730.

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Tong, Zhouyu, Mingxuan Bu, Yiqiang Zhang, Deren Yang i Xiaodong Pi. "Hyperdoped silicon: Processing, properties, and devices". Journal of Semiconductors 43, nr 9 (1.09.2022): 093101. http://dx.doi.org/10.1088/1674-4926/43/9/093101.

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Abstract Hyperdoping that introduces impurities with concentrations exceeding their equilibrium solubility has been attracting great interest since the tuning of semiconductor properties increasingly relies on extreme measures. In this review we focus on hyperdoped silicon (Si) by introducing methods used for the hyperdoping of Si such as ion implantation and laser doping, discussing the electrical and optical properties of hyperdoped bulk Si, Si nanocrystals, Si nanowires and Si films, and presenting the use of hyperdoped Si for devices like infrared photodetectors and solar cells. The perspectives of the development of hyperdoped Si are also provided.

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Erdem, Talha, i Hilmi Volkan Demir. "Color-Enrichment Semiconductor Nanocrystals for Biorhythm-Friendly Backlighting". Zeitschrift für Physikalische Chemie 232, nr 9-11 (28.08.2018): 1457–68. http://dx.doi.org/10.1515/zpch-2018-1134.

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Abstract Nanocrystals (NCs) offer great opportunities for developing novel light-emitting devices possessing superior properties such as high quality indoor lighting, efficient outdoor lighting, and display backlighting with increased color definition. The narrow-band emission spectra of these materials also offer opportunities to protect the human daily biological rhythm against the adverse effects of display backlighting. For this purpose, here we address this problem using color converting NCs and analyzed the effect of the NC integrated color converting light-emitting diode (NC LED) backlight spectra on the human circadian rhythm. We employed the three existing models including the circadian light, the melanopic sensitivity function, and the circadian effect factor by simultaneously satisfying the National Television Standards Committee (NTSC) requirements. The results show that NC LED backlighting exhibits (i) 33% less disruption on the circadian cycle if the same color gamut of the commercially available YAG:Ce LED is targeted and (ii) 34% wider color gamut while causing 4.1% weaker disruption on the circadian rhythm compared to YAG:Ce LED backlight if the NTSC color gamut is fully reproduced. Furthermore, we found out that blue and green emission peaks have to be located at 465 with 30 nm bandwidth and at 535 nm with 20 nm bandwidth, respectively, for a circadian rhythm friendly design while the red component offers flexibility around the peak emission wavelength at 636 nm as opposed to the requirements of quality indoor lighting. These design considerations introduced as a new design perspective for the displays of future will help avoiding the disruption of the human circadian rhythm.

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Zhang, Ya Ting, i Jian Quan Yao. "Photoconductive Properties of MEH-PPV/InP Nanocomposite Diode". Advanced Materials Research 531 (czerwiec 2012): 31–34. http://dx.doi.org/10.4028/www.scientific.net/amr.531.31.

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InP nanocrystals were prepared by an economic chemical reaction. A very high density of surface states is found at 0.5 eV below the intrinsic conductive band edge. Mixing these InP nanocrystals with MEH-PPV, obtained the composite. Devices with structure ITO/composite(MEH-PPV)/Al were fabricated and investigated. Photocurrent spectra showed that the interface between a conjugated polymer and a semiconductor nanocrystal can be used to provide efficient charge separation for neutral excitons on both the ground states and excited ones. Incorporation of nanocrystals, the conductivity of diode shows large improvements.

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Aleksandrova, Mariya. "Influence of the Temperature as an Environmental Factor on the Electrophysical Behavior of Flexible Polymeric Luminescent Devices". Journal of Coatings 2014 (10.09.2014): 1–5. http://dx.doi.org/10.1155/2014/437302.

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The effect of operational temperature on the electrophysical properties of polymer based electroluminescent structures is examined. For this purpose thin film of light-emitting semiconductor polyphenylenevinylene derivative is deposited between two indium-tin oxide (ITO) electrodes. DC current-voltage (I-V) characteristics of the fabricated devices ITO/polyphenylenevinylene derivative PPV-D/ITO are measured at varying ambient temperatures, ranging from room temperature (25°C) to 70°C. Several important electrical parameters like a trap factor, traps activation energy distribution, free carriers’ density, trapped carriers density, and effective mobility are estimated from measured temperature dependent I-V curves. Such analysis of the charge transport process in polymer devices may give information needed for optimization of the existing structures.

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Batstone, J. L. "Structural and electronic properties of defects in semiconductors". Proceedings, annual meeting, Electron Microscopy Society of America 53 (13.08.1995): 4–5. http://dx.doi.org/10.1017/s0424820100136398.

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The development of growth techniques such as metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy during the last fifteen years has resulted in the growth of high quality epitaxial semiconductor thin films for the semiconductor device industry. The III-V and II-VI semiconductors exhibit a wide range of fundamental band gap energies, enabling the fabrication of sophisticated optoelectronic devices such as lasers and electroluminescent displays. However, the radiative efficiency of such devices is strongly affected by the presence of optically and electrically active defects within the epitaxial layer; thus an understanding of factors influencing the defect densities is required.Extended defects such as dislocations, twins, stacking faults and grain boundaries can occur during epitaxial growth to relieve the misfit strain that builds up. Such defects can nucleate either at surfaces or thin film/substrate interfaces and the growth and nucleation events can be determined by in situ transmission electron microscopy (TEM).

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Ferguson, P. P., S. Gauvin i N. Beaudoin. "On the importance of the MIS junction to the photovoltaic properties of ITO/TPD/Alq3/Al electroluminescent devices". Canadian Journal of Physics 91, nr 1 (styczeń 2013): 60–63. http://dx.doi.org/10.1139/cjp-2012-0113.

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Organic electroluminescent devices with an ITO/TPD/Alq3/Al structure are fabricated and tested for their photovoltaic properties. To produce an open-circuit photovoltage, a conditioning is required. Here, the conditioning is exposing the device to air for a short duration. Without this conditioning, the device produces a short-circuit photocurrent with practically no open-circuit photovoltage. Calculations and fits to the photovoltaic data show that this observation could be attributed to the formation of a metal–insulator–semiconductor junction between the Alq3 and the Al, where an insulating layer is created by this conditioning.

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Hasegawa, Yasuchika. "ChemInform Abstract: Magnetic Semiconductor EuO, EuS, and EuSe Nanocrystals for Future Optical Devices". ChemInform 44, nr 18 (11.04.2013): no. http://dx.doi.org/10.1002/chin.201318201.

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Satta, Jessica, Andrea Pinna, Giorgio Pia, Luca Pilia, Carlo Maria Carbonaro, Daniele Chiriu, Luigi Stagi, Qader Abdulqader Abdullah i Pier Carlo Ricci. "Stable CsPbBr3 Nanocrystals—Decorated Nanoporous Gold for Optoelectronic Applications". Crystals 12, nr 6 (18.06.2022): 863. http://dx.doi.org/10.3390/cryst12060863.

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Halide perovskite colloidal nanocrystals have recently gained much attention thanks to their superior stability compared with their bulk counterpart and to their unique optical properties. In this paper, two systems combining nanocrystals and nanoporous gold are studied to create an optimal metal semiconductor heterojunction that can be used in photocatalysis and photovoltaic devices. The perovskite degradation phenomenon is observed when the nanoporous gold powder is mixed into the hexane suspension of nanocrystals, while the charge separation efficiency is increased by synthesizing the nanocrystals directly onto the gold porous structure. The analysis of the structural and optical properties evidences an energy transfer efficiency of 47%, along with the high structural stability of the hybrid system.

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Govindraju, S., N. Ntholeng, K. Ranganathan, M. J. Moloto, L. M. Sikhwivhilu i N. Moloto. "The Effect of Structural Properties of Cu2Se/Polyvinylcarbazole Nanocomposites on the Performance of Hybrid Solar Cells". Journal of Nanomaterials 2016 (2016): 1–8. http://dx.doi.org/10.1155/2016/9592189.

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It has been said that substitution of fullerenes with semiconductor nanocrystals in bulk heterojunction solar cells can potentially increase the power conversion efficiencies (PCE) of these devices far beyond the 10% mark. However new semiconductor nanocrystals other than the potentially toxic CdSe and PbS are necessary. Herein we report on the synthesis of Cu2Se nanocrystals and their incorporation into polyvinylcarbazole (PVK) to form polymer nanocomposites for use as active layers in hybrid solar cells. Nearly monodispersed 4 nm Cu2Se nanocrystals were synthesized using the conventional colloidal synthesis. Varying weight % of these nanocrystals was added to PVK to form polymer nanocomposites. The 10% polymer nanocomposite showed retention of the properties of the pure polymer whilst the 50% resulted in a complete breakdown of the polymeric structure as evident from the FTIR, TGA, and SEM. The lack of transport channels in the 50% polymer nanocomposite solar cell resulted in a device with no photoresponse whilst the 10% polymer nanocomposite resulted in a device with an open circuit voltage of 0.50 V, a short circuit current of 7.34 mA/cm2, and a fill factor of 22.28% resulting in a PCE of 1.02%.

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Baruah, S., Gamolwan Tumcharern i Joydeep Dutta. "Chitosan Clad Manganese Doped Zing Sulphide Nanocrystallites for Biolabeling". Advanced Materials Research 55-57 (sierpień 2008): 589–92. http://dx.doi.org/10.4028/www.scientific.net/amr.55-57.589.

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The synthesis of fluorescent nanocrystals is receiving a lot of attention for potential application in biological labeling as well as phosphors for field emission devices. Zinc sulphide doped with manganese (ZnS:Mn2+) is one of the most efficient electroluminescent phosphor displaying a wide emission band centred around 590 nm resulting from the intra-ionic transition in Mn2+ ions. We report a unique synthesis of zinc sulphide nanoparticles doped with manganese using a biocompatible passivating agent ‘chitosan’, with bright luminescence peaking at 590 nm. This high luminescence efficiency of the synthesized nanocrystals are ideal for quantum dot based bio-labeling applications. Synthesis of the nanoparticles was carried out by precipitation reaction in aqueous media of zinc acetate and sodium sulphide where manganese acetate was added as the dopant. The obtained nanoparticles were around 4 to 6 nm in size and were found to be stable for months of shelf life. The photoluminescence intensity did not degrade when the colloid was heated up to 65 oC for prolonged periods.

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