Artykuły w czasopismach na temat „Electro-optic devices”

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1

Huang, Lidu. "Novel electro-optic devices". International Journal of Applied Electromagnetics and Mechanics 22, nr 1-2 (21.10.2005): 3–10. http://dx.doi.org/10.3233/jae-2005-687.

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2

Yagi, Shogo, i Kazuo Fujiura. "Electro-optic KTN Devices". Physics Procedia 56 (2014): 40–47. http://dx.doi.org/10.1016/j.phpro.2014.08.093.

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3

Wang, Yan, Tongtong Liu, Jiangyi Liu, Chuanbo Li, Zhuo Chen i Shuhui Bo. "Organic electro-optic polymer materials and organic-based hybrid electro-optic modulators". Journal of Semiconductors 43, nr 10 (1.10.2022): 101301. http://dx.doi.org/10.1088/1674-4926/43/10/101301.

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Abstract High performance electro-optic modulator, as the key device of integrated ultra-wideband optical systems, have become the focus of research. Meanwhile, the organic-based hybrid electro-optic modulators, which make full use of the advantages of organic electro-optic (OEO) materials (e.g. high electro-optic coefficient, fast response speed, high bandwidth, easy processing/integration and low cost) have attracted considerable attention. In this paper, we introduce a series of high-performance OEO materials that exhibit good properties in electro-optic activity and thermal stability. In addition, the recent progress of organic-based hybrid electro-optic devices is reviewed, including photonic crystal-organic hybrid (PCOH), silicon-organic hybrid (SOH) and plasmonic-organic hybrid (POH) modulators. A high-performance integrated optical platform based on OEO materials is a promising solution for growing high speeds and low power consumption in compact sizes.
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4

Dalton, L. R. "Organic electro-optic materials". Pure and Applied Chemistry 76, nr 7-8 (1.01.2004): 1421–33. http://dx.doi.org/10.1351/pac200476071421.

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The macroscopic electrooptic activity of organic materials depends upon the molecular hyperpolarizability, beta, of individual organic chromophores and upon the product of number density, N, and noncentrosymmetric order, <cos3theta>, of the chromophores in a hardened polymer lattice. Quantum and statistical mechanical calculations provide the basis for rational improvement of these parameters leading to electro-optic coefficients (at telecommunication wavelengths) of greater than 100 pm/V (a factor of 3 larger than values for the best inorganic material, lithium niobate). Such calculations also provide insight into what further improvements can be expected. Owing to low and relatively dispersionless dielectric constants and refractive indicies, organic materials facilitate the fabrication of devices with 3 dB operational bandwidths of greater than 100 GHz. Moreover, robust and low optical loss materials can be fabricated by design. An under-appreciated advantage of organic electro-optic materials is their processability, and a variety of stripline, cascaded prism and super-prism, and ring microresonator devices are readily fabricated. Conformal, flexible, and three-dimensional devices are also readily produced. With ring microresonator devices, active wavelength division multiplexing, optical network reconfiguration, and laser frequency tuning are straightforwardly accomplished.
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5

Nann, Thomas, i William M. Skinner. "Quantum Dots for Electro-Optic Devices". ACS Nano 5, nr 7 (5.07.2011): 5291–95. http://dx.doi.org/10.1021/nn2022974.

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6

Raghunathababu i Siddaiah P. "ELECTRO OPTIC MODULATOR DEVICES FOR HIGH SPEED DATA IN OPTICAL COMMUNICATION". International Journal of Research -GRANTHAALAYAH 3, nr 10 (31.10.2015): 38–42. http://dx.doi.org/10.29121/granthaalayah.v3.i10.2015.2930.

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Electro Optic devices in fiber optic Communication systems are playing a Vital Role in telecommunication infrastructure for worldwide broadband networks. Wide bandwidth of signal transmission with low delay, wide transmission bandwidth with less latency, the transmission medium for long distance with high data rate transmission. This paper gives an overview of Electro optic devices for fiber optic systems and their key technologies, their technological trend towards the next generation.
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7

Oh, Min-Cheol Oh, Wol-Yon Hwang Hwang i Jang-Joo Kim Kim. "Integrated-Optic Polarization Controlling Devices Using Electro-Optic Polymers". ETRI Journal 18, nr 4 (1.01.1997): 287–99. http://dx.doi.org/10.4218/etrij.97.0197.0045.

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8

BECHTEL, JAMES, JAMES MENDERS i DE YU ZANG. "Electro-Optic Polymer Integrated Optic Devices and Future Applications". Fiber & Integrated Optics 22, nr 4 (1.01.2003): 211–24. http://dx.doi.org/10.1080/01468030303813.

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9

BECHTEL, JAMES. "Electro-Optic Polymer Integrated Optic Devices and Future Applications". Fiber and Integrated Optics 22, nr 4 (styczeń 2003): 211–24. http://dx.doi.org/10.1080/01468030390208411.

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10

Nguimdo, Romain Modeste, Pere Colet i Claudio Mirasso. "Electro-Optic Delay Devices With Double Feedback". IEEE Journal of Quantum Electronics 46, nr 10 (październik 2010): 1436–43. http://dx.doi.org/10.1109/jqe.2010.2050055.

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11

Steier, William H., Antao Chen, Sang-Shin Lee, Sean Garner, Hua Zhang, Vadim Chuyanov, Larry R. Dalton i in. "Polymer electro-optic devices for integrated optics". Chemical Physics 245, nr 1-3 (lipiec 1999): 487–506. http://dx.doi.org/10.1016/s0301-0104(99)00042-7.

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12

Mares, P. J., i S. L. Chuang. "Modeling of self‐electro‐optic‐effect devices". Journal of Applied Physics 74, nr 2 (15.07.1993): 1388–97. http://dx.doi.org/10.1063/1.354897.

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13

Liu, Yang, Guodong Ren, Tengfei Cao, Rohan Mishra i Jayakanth Ravichandran. "Modeling temperature, frequency, and strain effects on the linear electro-optic coefficients of ferroelectric oxides". Journal of Applied Physics 131, nr 16 (28.04.2022): 163101. http://dx.doi.org/10.1063/5.0090072.

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An electro-optic modulator offers the function of modulating the propagation of light in a material with an electric field and enables a seamless connection between electronics-based computing and photonics-based communication. The search for materials with large electro-optic coefficients and low optical loss is critical to increase the efficiency and minimize the size of electro-optic devices. We present a semi-empirical method to compute the electro-optic coefficients of ferroelectric materials by combining first-principles density-functional theory calculations with Landau–Devonshire phenomenological modeling. We apply the method to study the electro-optic constants, also called Pockels coefficients, of three paradigmatic ferroelectric oxides: BaTiO3, LiNbO3, and LiTaO3. We present their temperature-, frequency-, and strain-dependent electro-optic tensors calculated using our method. The predicted electro-optic constants agree with the experimental results, where available, and provide benchmarks for experimental verification.
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14

Vinnakota, Raj K., Zuoming Dong, Andrew F. Briggs, Seth R. Bank, Daniel Wasserman i Dentcho A. Genov. "Plasmonic electro-optic modulator based on degenerate semiconductor interfaces". Nanophotonics 9, nr 5 (2.04.2020): 1105–13. http://dx.doi.org/10.1515/nanoph-2019-0518.

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AbstractWe present a semiconductor-based optoelectronic switch based on active modulation of surface plasmon polaritons (SPPs) at lattice-matched indium gallium arsenide (In0.53Ga0.47As) degenerately doped pn++ junctions. The experimental device, which we refer to as a surface plasmon polariton diode (SPPD), is characterized electrically and optically, showing far-field reflectivity modulation for mid-IR wavelengths. Self-consistent electro-optic multiphysics simulations of the device’s electrical and electromagnetic response have been performed to estimate bias-dependent modulation and switching times. The numerical model shows a strong agreement with the experimental results, validating the claim of excitation and modulation of SPPs at the junction, thus potentially providing a new pathway toward fast optoelectronic devices.
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15

Park, Nam Hun, Seongju Ha, Kwanbyung Chae, Ji-Yong Park i Dong-Il Yeom. "Strong electro-optic absorption spanning nearly two octaves in an all-fiber graphene device". Nanophotonics 9, nr 15 (7.09.2020): 4539–44. http://dx.doi.org/10.1515/nanoph-2020-0327.

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AbstractAn efficient electro-optic transition control is reported in all-fiber graphene devices over a broad spectral range from visible to near-infrared. The ion liquid–based gating device fabricated onto a side-polished fiber with high numerical aperture significantly enhances the light-matter interaction with graphene, resulting in strong and nonresonant electro-optic absorption of up to 25.5 dB in the wavelength ranging from 532 to 1950 nm. A comprehensive analysis of the optical and electrical properties of the device fabricated with monolayer and bilayer graphene revealed that the number of graphene layers significantly impacts on the performance of the device, including modulation depth and driving voltage. Wavelength-dependent optical response is also measured, which clearly characterizes the electronic bandgap dispersion of graphene. The device exhibited more efficient electro-optic modulation in the longer wavelength region, where the maximum light modulation efficiency of 286.3%/V is achieved at a wavelength of 1950 nm.
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16

Chigrinov, Vladimir, Qi Guo i Aleksey Kudreyko. "Photo-Aligned Ferroelectric Liquid Crystal Devices with Novel Electro-Optic Characteristics". Crystals 10, nr 7 (1.07.2020): 563. http://dx.doi.org/10.3390/cryst10070563.

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This paper examines different applications of ferroelectric liquid crystal devices based on photo-alignment. Successful application of the photo-alignment technique is considered to be a critical breakthrough. A variety of display and photonic devices with azo dye aligned ferroelectric liquid crystals is presented: smart glasses, liquid crystal Pancharatnam–Berry phase optical elements, 2D/3D switchable lenses, and laser therapy devices. Comparison of electro-optical behavior of ferroelectric liquid crystals is described considering the performance of devices. This paper facilitates the optimization of device design, and broadens the possible applications in the display and photonic area.
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17

Wu, Jieyun, Jingdong Luo, Nathan Cernetic, Kaixin Chen, Kin-Seng Chiang i Alex K. Y. Jen. "PCBM-doped electro-optic materials: investigation of dielectric, optical and electro-optic properties for highly efficient poling". Journal of Materials Chemistry C 4, nr 43 (2016): 10286–92. http://dx.doi.org/10.1039/c6tc03932d.

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18

Shames, Paul E., Pang Chen Sun i Yeshaiahu Fainman. "Modeling of scattering and depolarizing electro-optic devices II Device simulation". Applied Optics 37, nr 17 (10.06.1998): 3726. http://dx.doi.org/10.1364/ao.37.003726.

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19

Youssefi, Amir, Itay Shomroni, Yash J. Joshi, Nathan R. Bernier, Anton Lukashchuk, Philipp Uhrich, Liu Qiu i Tobias J. Kippenberg. "A cryogenic electro-optic interconnect for superconducting devices". Nature Electronics 4, nr 5 (maj 2021): 326–32. http://dx.doi.org/10.1038/s41928-021-00570-4.

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20

Morgan, Robert A., Gabriela Livescu, Leo M. F. Chirovsky, Marlin W. Focht i Ronald E. Leibenguth. "Fabry–Perot-enhanced self-electro-optic-effect devices". Optics Letters 17, nr 6 (15.03.1992): 423. http://dx.doi.org/10.1364/ol.17.000423.

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21

TOSHIYOSHI, Hiroshi. "Micro Electro Mechanical Devices for Fiber Optic Telecommunication". JSME International Journal Series B 47, nr 3 (2004): 439–46. http://dx.doi.org/10.1299/jsmeb.47.439.

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22

Chang, Zeshan, Wei Jin i Kin Seng Chiang. "Graphene electrodes for lithium-niobate electro-optic devices". Optics Letters 43, nr 8 (6.04.2018): 1718. http://dx.doi.org/10.1364/ol.43.001718.

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23

Hung, C. ‐Y, T. E. Schlesinger i M. L. Reed. "Piezoelectrically induced stress tuning of electro‐optic devices". Applied Physics Letters 59, nr 27 (30.12.1991): 3598–600. http://dx.doi.org/10.1063/1.105644.

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24

Song, Seongkyu, Jaewook Jeong, Seok Hwan Chung, Soon Moon Jeong i Byeongdae Choi. "Electroluminescent devices with function of electro-optic shutter". Optics Express 20, nr 19 (29.08.2012): 21074. http://dx.doi.org/10.1364/oe.20.021074.

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25

Giguere, Stephen R., Lionel Friedman, Richard A. Soref i Joseph P. Lorenzo. "Simulation studies of silicon electro‐optic waveguide devices". Journal of Applied Physics 68, nr 10 (15.11.1990): 4964–70. http://dx.doi.org/10.1063/1.347082.

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26

Krotkus, A., D. Hoffmann, R. Ludwig i S. Diez. "Optical sampling technique for fast electro-optic devices". Electronics Letters 34, nr 19 (1998): 1877. http://dx.doi.org/10.1049/el:19981286.

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27

YAMAMOTO, TADAAKI, YOHEI OHKAWA, TOMOYUKI KITAMOTO, TOMOYUKI NAGAYA i SHIGETOSHI NARA. "BIFURCATION PHENOMENA IN COUPLED DYNAMIC SELF-ELECTRO-OPTIC-EFFECT DEVICES". International Journal of Bifurcation and Chaos 16, nr 12 (grudzień 2006): 3717–25. http://dx.doi.org/10.1142/s0218127406017117.

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Dynamic phenomena in a device network consisting of Dynamic Self-Electro-Optic-Effect Devices (D-SEED) are theoretically predicted and discussed via phenomenological and numerical methods, where each D-SEED element shows nonlinear oscillatory behavior. Analysis is based on a phenomenological model for photocarriers proposed in previous works by one of the authors and it treats a set of diffusively coupled nonlinear rate equations for the photocarrier density of each D-SEED.
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28

Ma, Zhizhen, Zhuoran Li, Ke Liu, Chenran Ye i Volker J. Sorger. "Indium-Tin-Oxide for High-performance Electro-optic Modulation". Nanophotonics 4, nr 1 (30.06.2015): 198–213. http://dx.doi.org/10.1515/nanoph-2015-0006.

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Abstract:Advances in opto-electronics are often led by discovery and development of materials featuring unique properties. Recently, the material class of transparent conductive oxides (TCO) has attracted attention for active photonic devices on-chip. In particular, indium tin oxide (ITO) is found to have refractive index changes on the order of unity. This property makes it possible to achieve electrooptic modulation of sub-wavelength device scales, when thin ITO films are interfaced with optical light confinement techniques such as found in plasmonics; optical modes are compressed to nanometer scale to create strong light-matter interactions. Here we review efforts towards utilizing this novel material for high performance and ultra-compact modulation. While high performance metrics are achieved experimentally, there are open questions pertaining to the permittivity modulation mechanism of ITO. Finally, we review a variety of optical and electrical properties of ITO for different processing conditions, and show that ITO-based plasmonic electro-optic modulators have the potential to significantly outperform diffractionlimited devices.
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29

WU, ZHI, JOSEPH W. HAUS, QIWEN ZHAN i ROBERT L. NELSON. "LONG RANGE SURFACE PLASMON DEVICES DESIGN USING SUBWAVELENGTH METAL GRATING". Journal of Nonlinear Optical Physics & Materials 17, nr 04 (grudzień 2008): 413–23. http://dx.doi.org/10.1142/s0218863508004329.

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In this paper we review a new electro-optic devices design strategy using long range surface plasmon (LRSP) excitation along subwavelength metal grating. It is shown that LRSP can be excited on extremely thin subwavelength metal grating embedded in symmetric dielectric ambient. Due to coupling and propagation of LRSP between the metal grating nanowires, a super-narrow reflection dip can be obtained. Compared with conventional LRSP along metal thin film, much narrower resonance is achieved through decreased damping from the existence of large dielectric gaps between the grating nanowires. This interesting phenomenon can be used to design electro-optics devices with improved performance. Examples of electro-optic modulator design with lower insertion loss and low operating voltage and spectral notch filter design with very narrow spectral width will be shown. Its application in refractive index sensing is also discussed.
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30

Paternò, Giuseppe M., Liliana Moscardi, Ilka Kriegel, Francesco Scotognella i Guglielmo Lanzani. "Electro-optic and magneto-optic photonic devices based on multilayer photonic structures". Journal of Photonics for Energy 8, nr 03 (22.03.2018): 1. http://dx.doi.org/10.1117/1.jpe.8.032201.

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31

Sorger, Volker J., Norberto D. Lanzillotti-Kimura, Ren-Min Ma i Xiang Zhang. "Ultra-compact silicon nanophotonic modulator with broadband response". Nanophotonics 1, nr 1 (1.07.2012): 17–22. http://dx.doi.org/10.1515/nanoph-2012-0009.

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AbstractElectro-optic modulators have been identified as the key drivers for optical communication and signal processing. With an ongoing miniaturization of photonic circuitries, an outstanding aim is to demonstrate an on-chip, ultra-compact, electro-optic modulator without sacrificing bandwidth and modulation strength. While silicon-based electro-optic modulators have been demonstrated, they require large device footprints of the order of millimeters as a result of weak non-linear electro-optical properties. The modulation strength can be increased by deploying a high-Q resonator, however with the trade-off of significantly sacrificing bandwidth. Furthermore, design challenges and temperature tuning limit the deployment of such resonance-based modulators. Recently, novel materials like graphene have been investigated for electro-optic modulation applications with a 0.1 dB per micrometer modulation strength, while showing an improvement over pure silicon devices, this design still requires device lengths of tens of micrometers due to the inefficient overlap between the thin graphene layer, and the optical mode of the silicon waveguide. Here we experimentally demonstrate an ultra-compact, silicon-based, electro-optic modulator with a record-high 1 dB per micrometer extinction ratio over a wide bandwidth range of 1 μm in ambient conditions. The device is based on a plasmonic metal-oxide-semiconductor (MOS) waveguide, which efficiently concentrates the optical modes’ electric field into a nanometer thin region comprised of an absorption coefficient-tuneable indium-tin-oxide (ITO) layer. The modulation mechanism originates from electrically changing the free carrier concentration of the ITO layer which dramatically increases the loss of this MOS mode. The seamless integration of such a strong optical beam modulation into an existing silicon-on-insulator platform bears significant potential towards broadband, compact and efficient communication links and circuits.
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32

Bordyug, Alexander Sergeevich. "Application of plate with optical sensors in ship information systems". Vestnik of Astrakhan State Technical University. Series: Marine engineering and technologies 2021, nr 4 (30.11.2021): 91–97. http://dx.doi.org/10.24143/2073-1574-2021-4-91-97.

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The article considers application of fiber optic devices in many devices due to their small size and high accuracy. The new fiber optic devices are equipped with a Slab Coupled Fiber (SCF) system. The SCF method uses resonant coupling between an optical fiber and a plate waveguide to create an intra-fiber device. Devices manufactured with this technology consist of polarizers, filters and sensors. Fiber optic systems have been used in torque measurement systems in the oil and gas industry and in aerospace industry. Using this system on ships is more expensive in comparison with the technologies based on strain gauges. There is offered using inexpensive optical measuring system with plate optical sensors. SCF devices use D-shaped fiber as a platform. Plate optical sensor (SCOS) devices are based on the use of an electro-optical sensor. Today, a D-fiber coupled magnetic field sensor has been developed. The device combines a magneto-optical plate waveguide with a D-fiber to measure magnetic fields. The plate coupled magneto-optical sensor (MO-SCOS) measures magnetic fields up to 2 A/m. Due to its short length the sensor can display fields with a spatial resolution of 1 mm.
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33

Jiang Qiang, Wang Xuan i Li Zhiyuan. "Measurement of the Electro-Optic Coefficients in Electro-Optic Polymer Thin Film Devices with Interdigitated Coplanar Electrodes". Acta Optica Sinica 33, nr 9 (2013): 0931001. http://dx.doi.org/10.3788/aos201333.0931001.

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34

Mobassem, Sonia, Nicholas J. Lambert, Alfredo Rueda, Johannes M. Fink, Gerd Leuchs i Harald G. L. Schwefel. "Thermal noise in electro-optic devices at cryogenic temperatures". Quantum Science and Technology 6, nr 4 (15.07.2021): 045005. http://dx.doi.org/10.1088/2058-9565/ac0f36.

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35

Hosoda, Makoto, Kenji Kawashima, Makoto Inai, Teiji Yamamoto i Kenzo Fujiwara. "Optical differentiator using symmetric self‐electro‐optic effect devices". Applied Physics Letters 62, nr 22 (31.05.1993): 2754–56. http://dx.doi.org/10.1063/1.109251.

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36

Nakata, T., T. Gotoh, M. Satoh i E. Hasegawa. "Polymer Morphology and Electro-Optic Properties of Psct Devices". Molecular Crystals and Liquid Crystals Science and Technology. Section A. Molecular Crystals and Liquid Crystals 299, nr 1 (czerwiec 1997): 389–94. http://dx.doi.org/10.1080/10587259708042018.

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37

Nagata, Hirotoshi, Naoki Mitsugi, Toshihiro Sakamoto, Kaori Shima, Masumi Tamai i Eungi Min Haga. "Undesirable contaminants possibly introduced in LiNbO3 electro-optic devices". Journal of Applied Physics 86, nr 11 (grudzień 1999): 6342–50. http://dx.doi.org/10.1063/1.371696.

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38

Qasymeh, M., M. Cada i S. A. Ponomarenko. "Quadratic Electro-Optic Kerr Effect: Applications to Photonic Devices". IEEE Journal of Quantum Electronics 44, nr 8 (sierpień 2008): 740–46. http://dx.doi.org/10.1109/jqe.2008.924430.

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39

Bloisi, F., i L. Vicari. "Laser beam manipulation by composite material electro-optic devices". Optics and Lasers in Engineering 39, nr 3 (marzec 2003): 389–408. http://dx.doi.org/10.1016/s0143-8166(01)00112-9.

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40

Merbach, D., E. Schöll i J. Gutowski. "Simulation of ZnSe-based self-electro-optic effect devices". Journal of Applied Physics 85, nr 10 (15.05.1999): 7051–58. http://dx.doi.org/10.1063/1.370511.

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41

Ohkawa, Y., T. Yamamoto, T. Nagaya i S. Nara. "Dynamic behaviors in coupled self-electro-optic effect devices". Applied Physics Letters 86, nr 11 (14.03.2005): 111107. http://dx.doi.org/10.1063/1.1875760.

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42

Ghonge, S. G., E. Goo, R. Ramesh, R. Haakenaasen i D. K. Fork. "Epitaxial ferroelectric thin films". Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 572–73. http://dx.doi.org/10.1017/s0424820100170591.

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Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.
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43

Adams, Mitchell, Caitlin Bingham i Daniel Smalley. "Towards AO/EO Modulators in Lithium Niobate for Dual-Axis Holographic Displays". Electronic Imaging 2021, nr 2 (18.01.2021): 11–1. http://dx.doi.org/10.2352/issn.2470-1173.2021.2.sda-011.

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A major limitation of acousto-optic (AO) modulator-based holographic displays is their inability to present full-parallax. We propose that full-parallax capabilities can be added to these displays by integrating electro-optic (EO) modulators into the architecture. We validated this concept by rendering computational models and by fabricating and testing EO deflection devices in lithium niobate. Our models suggest that an AO/EO modulator that yields an EO deflection range of 18.2° using less than 5 V can be fabricated given the limitations of standard photolithography and lithium niobate waveguides. Actual deflection ranges were measured from our fabricated devices and were compared to those that were derived from our model. In the worst case, the experimental results differed by about 16% compared to the corresponding theoretical result. In the best case, the error was smaller than our measurement tolerances. The work we have performed sets the stage for the first instance of an integrated electro-optic/acousto-optic modulator for holographic displays.
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44

Mazelsky, Robert, i Donald K. Fox. "Development of large single crystals for electronic, electro-optic and acousto-optic devices". Progress in Crystal Growth and Characterization 15, nr 2 (styczeń 1987): 75–96. http://dx.doi.org/10.1016/0146-3535(87)90002-5.

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45

HERMANN, J. A., i J. STAROMLYNSKA. "TRENDS IN OPTICAL SWITCHES, LIMITERS AND DISCRIMINATORS". Journal of Nonlinear Optical Physics & Materials 02, nr 03 (lipiec 1993): 271–337. http://dx.doi.org/10.1142/s021819919300019x.

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46

Maurer, Michael, Evan Gawron i Christopher Middlebrook. "Progressive Poling of Large Area, High r33 Electro-Optic Polymer SEO100c". Applied Sciences 11, nr 17 (1.09.2021): 8108. http://dx.doi.org/10.3390/app11178108.

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SEO100c, an EO-polymer, has been reported of having an r33 in excess of 100 pm/V. Experimental poling research was performed on rib waveguide modulator for device design and development. Reported is the determination of the impact that temperature and voltage have on the poling of a SEO100c waveguide device in order to maximize the r33 while avoiding damage to the device structure ensuring high yield in manufacture. The poling process is shown to have a nonlinear relationship between r33 and poling field aiding in the selection of achievable poling voltages for required r33 values. Device thermal stability is quantified and reported for the complete poling process and the impacts upon r33. Investigation into the possible relaxation of device r33 is measured over an extended period demonstrating desirable use within deployable devices.
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47

Sayer, M., Z. Wu, C. V. R. Vasant Kumar, D. T. Amm i E. M. Griswold. "Ferroelectrics for semiconductor devices". Canadian Journal of Physics 70, nr 10-11 (1.10.1992): 1159–70. http://dx.doi.org/10.1139/p92-188.

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The integration of thin film ferroelectrics with silicon processing is being implemented for various types of devices. The technology is based on the sputtering or chemical deposition of lead-based perovskites such as lead zirconate titanate. Factors concerned with the integration of ferroelectric films with semiconductor processing are described. Major interests in Canada include nonvolatile ferroelectric random access memories for high-speed digital or long-term analog memory applications, high-density capacitors, electro-optic switches, and a wide range of sensors and actuators integrated into silicon.
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48

Biryuchinskiy, Sergey, Konstantin Melnikov i Vladimir Melnikov. "Analysis of an Ultrafast MOSFET Based Pockels Cell Driver". Advanced Materials Research 679 (kwiecień 2013): 53–57. http://dx.doi.org/10.4028/www.scientific.net/amr.679.53.

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Analysis of fast MOSFET based High voltage switch for High Voltage Electro-Optic Devices is presented. Single MOSFET connection is considered by using Laplace transformation. Based on executed mathematical transforms, directions of improvement ways for typical engineering solutions are analyzed. Improvement directions including fastest operation, optical losses minimization, optical behaviors improvement, cost reducing, size and weight decreasing are considered. Modern Optical Arrangements of an Electro-Optic Shutter Schematic are compared. Different schematic designs of Q-Switch Drivers for Pockels Cell are presented. Parameters of constructed based on presented analysis Q-Switch Driver are given.
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Dalton, Larry, i Stephanie Benight. "Theory-Guided Design of Organic Electro-Optic Materials and Devices". Polymers 3, nr 3 (19.08.2011): 1325–51. http://dx.doi.org/10.3390/polym3031325.

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MORIMOTO, Akihiro, i Taisuke WADA. "Laser Beam Control by Electro-Optic Devices Using Polarization Reversal". Review of Laser Engineering 32, nr 3 (2004): 165–69. http://dx.doi.org/10.2184/lsj.32.165.

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