Gotowe bibliografie tematyczne / Electrical measurements C-V and G-V

Gotowa bibliografia na temat „Electrical measurements C-V and G-V”

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Data publikacji: 13 lipca 2024

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Artykuły w czasopismach na temat "Electrical measurements C-V and G-V"

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Özden, Şadan, Ömer Güllü i Osman Pakma. "Room temperature I–V and C–V characteristics of Au/mTPP/p-Si organic MIS devices". European Physical Journal Applied Physics 82, nr 2 (maj 2018): 20101. http://dx.doi.org/10.1051/epjap/2018180004.

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The room temperature electrical characteristics of the organic Au/mTPP/p-Si device fabricated by spin coating method were investigated with I–V and C–V measurements. It has been determined that the device has a high rectification coefficient and current transport is dominated by the thermionic emission. The serial resistance value is calculated at 92 ohms with two different approaches. Serial resistance effects were also found to be effective in C–V and G–V measurements. The different barrier heights from the I–V and C–V measurements indicate possible interface and trap states or barrier inhomogeneities.
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Padma, R., i V. Rajagopal Reddy. "Electrical properties and the determination of interface state density from I-V, C-f and G-f measurements in Ir/Ru/n-InGaN Schottky barrier diode". Физика и техника полупроводников 51, nr 12 (2017): 1698. http://dx.doi.org/10.21883/ftp.2017.12.45189.8340.

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The electrical properties of the Ir/Ru Schottky contacts on n-InGaN have been investigated by current-voltage (I-V), capacitance-voltage (C-V), capacitance-frequency (C-f) and conductance-frequency (G-f) measurements. The obtained mean barrier height and ideality factor from I-V are 0.61 eV and 1.89. The built-in potential, doping concentration and barrier height values are also estimated from the C-V measurements and the corresponding values are 0.62 V, 1.20x1017 cm-3 and 0.79 eV, respectively. The interface state density (NSS) obtained from forward bias I-V characteristics by considering the series resistance (RS) values are lower without considering the series resistance (RS). Furthermore, the interface state density (NSS) and relaxation time (tau) are also calculated from the experimental C-f and G-f measurements. The NSS values obtained from the I-V characteristics are almost three orders higher than the NSS values obtained from the C-f and G-f measurements. The experimental results depict that NSS and tau are decreased with bias voltage. The frequency dependence of the series resistance (RS) is attributed to the particular distribution density of interface states. DOI: 10.21883/FTP.2017.12.45189.8340
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Faraz, Sadia Muniza, Wakeel Shah, Naveed Ul Hassan Alvi, Omer Nur i Qamar Ul Wahab. "Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode". Advances in Condensed Matter Physics 2020 (13.04.2020): 1–9. http://dx.doi.org/10.1155/2020/6410573.

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The electrical characterization of p-Silicon (Si) and n-Zinc oxide (ZnO) nanorod heterojunction diode has been performed. ZnO nanorods were grown on p-Silicon substrate by the aqueous chemical growth (ACG) method. The SEM image revealed high density, vertically aligned hexagonal ZnO nanorods with an average height of about 1.2 μm. Electrical characterization of n-ZnO nanorods/p-Si heterojunction diode was done by current-voltage (I-V), capacitance-voltage (C-V), and conductance-voltage (G-V) measurements at room temperature. The heterojunction exhibited good electrical characteristics with diode-like rectifying behaviour with an ideality factor of 2.7, rectification factor of 52, and barrier height of 0.7 V. Energy band (EB) structure has been studied to investigate the factors responsible for small rectification factor. In order to investigate nonidealities, series resistance and distribution of interface state density (NSS) below the conduction band (CB) were extracted with the help of I-V and C-V and G-V measurements. The series resistances were found to be 0.70, 0.73, and 0.75 KΩ, and density distribution interface states from 8.38 × 1012 to 5.83 × 1011 eV−1 cm−2 were obtained from 0.01 eV to 0.55 eV below the conduction band.
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Padovani, Andrea, Ben Kaczer, Milan Pesic, Attilio Belmonte, Mihaela Popovici, Laura Nyns, Dimitri Linten i in. "A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From ${I}$ – ${V}$ , ${C}$ – ${V}$ , and ${G}$ – ${V}$ Measurements". IEEE Transactions on Electron Devices 66, nr 4 (kwiecień 2019): 1892–98. http://dx.doi.org/10.1109/ted.2019.2900030.

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Pananakakis, G., i G. Kamarinos. "Complete determination of the electrical interfacial parameters in Al-SiO2 (30 Å)-Si tunnel diodes using I–V, C–V, G–V measurements". Surface Science Letters 168, nr 1-3 (marzec 1986): A137. http://dx.doi.org/10.1016/0167-2584(86)90487-1.

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Pananakakis, G., i G. Kamarinos. "Complete determination of the electrical interfacial parameters in Al-SiO2 (30 Å)-Si tunnel diodes using I–V, C–V, G–V measurements". Surface Science 168, nr 1-3 (marzec 1986): 657–64. http://dx.doi.org/10.1016/0039-6028(86)90897-6.

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Altındal, Şemsettin, Ali Barkhordari, Gholamreza Pirgholi-Givi, Murat Ulusoy, Hamidreza Mashayekhi, Süleyman Özçelik i Yashar Azizian-Kalandaragh. "Comparison of the electrical and impedance properties of Au/(ZnOMn:PVP)/n-Si (MPS) type Schottky-diodes (SDs) before and after gamma-irradiation". Physica Scripta 96, nr 12 (1.12.2021): 125881. http://dx.doi.org/10.1088/1402-4896/ac43d7.

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Abstract The effect of 60Co-iradiation) on the electrical parameters in the Au/(ZnOMn:PVP)/n-Si SDs have been investigated using the current-voltage (I–V) and capacitance/conductance-voltage (C/G–V) measurements. Firstly, the values of reverse-saturation-current (Io), ideality-factor (n), barrier-height (BH), shunt/series resistances (Rsh, Rs), and rectifying-rate (RR) were extracted from the I–V data before and after gamma-irradiation (5 and 60 kGy) using thermionic-emission (TE), Norde, and Cheung methods. The surface-states (Nss) versus energy (Ec–Ess) profile was extracted from I–V data considering voltage-dependent of n and BH using Card-Rhoderick method. Secondly, the doping-donor atoms (Nd), Fermi-energy (EF), BH, maximum electric-field (Em), and depletion-layer width (Wd) were extracted from the linear-part of reverse-bias C−2–V plot for 100 kHz before and after irradiation. Finally, the voltage-dependent profiles of Rs and radiation-induced of Nss were extracted from the C/G–V plots by using Nicollian-Brews and the difference between C–V plots before and after irradiation, respectively. The peak behavior in the Nss–V plots and shifts in its position was attributed to special-distribution of Nss at (ZnOMn:PVP)/n-Si interface and restructure/reordering of them under radiation and electric field. Experimental results show that gamma-irradiation is more effective both on the I–V and C/G–V plots or electrical parameters, and hence the fabricated Au/(ZnOMn:PVP)/n-Si SDs can be used as a radiation-sensor.
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Koliakoudakis, C., J. Dontas, S. Karakalos, M. Kayambaki, S. Ladas, G. Konstantinidis, S. Kennou i Konstantinos Zekentes. "Fabrication and Characterization of Cr-Based Schottky Diode on n-Type 4H-SiC". Materials Science Forum 615-617 (marzec 2009): 651–54. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.651.

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The behavior of 200nm Cr Schottky contacts on n-type 4H-SiC has been investigated with photoelectron spectroscopy (XPS) and standard (I-V and C-V) electrical measurements at different measurement temperatures. A barrier height close to 1.2 eV was calculated from XPS data under no-current and no-bias conditions on ultra-thin Cr films grown in-situ under UHV conditions. The I-V measurements on as-deposited contacts resulted in a barrier height of 1.06 eV while a value of 1.2 eV has been extracted from the C-V measurements.
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Afandiyeva, İ. M., İ. Dökme, Ş. Altındal, L. K. Abdullayeva i Sh G. Askerov. "The frequency and voltage dependent electrical characteristics of Al–TiW–Pd2Si/n-Si structure using I–V, C–V and G/ω–V measurements". Microelectronic Engineering 85, nr 2 (luty 2008): 365–70. http://dx.doi.org/10.1016/j.mee.2007.07.010.

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Giannazzo, Filippo, Stefan Hertel, Andreas Albert, Antonino La Magna, Fabrizio Roccaforte, Michael Krieger i Heiko B. Weber. "Electrical Nanocharacterization of Epitaxial Graphene/Silicon Carbide Schottky Contacts". Materials Science Forum 778-780 (luty 2014): 1142–45. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.1142.

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Epitaxial graphene fabricated by thermal decomposition of the Si-face of silicon carbide (SiC) forms a defined interface to the SiC substrate. As-grown monolayer graphene with buffer layer establishes an ohmic interface even to low-doped (e. g. [N] ≈ 1015 cm-3) SiC, and a specific contact resistance as low as ρC = 5.9×10-6 Ωcm2 can be achieved on highly n-doped SiC layers. After hydrogen intercalation of monolayer graphene, the so-called quasi-freestanding graphene forms a Schottky contact to n-type SiC with a Schottky barrier height of 1.5 eV as determined from C-V analysis and core level photoelectron spectroscopy (XPS). This value, however, strongly deviates from the respective value of less than 1 eV determined from I-V measurements. It was found from conductive atomic force microscopy (C-AFM) that the Schottky barrier is locally lowered on other crystal facets located at substrate step edges. For very small Schottky contacts, the barrier height extracted from I-V curves approaches the value of 1.5 eV from C-V and XPS.
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Rozprawy doktorskie na temat "Electrical measurements C-V and G-V"

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Mohamad, Blend. "Electrical characterization of fully depleted SOI devices based on C-V measurements". Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAT001/document.

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Les technologies de films minces sur isolant apparaissent comme des solutions fiables pour la nano électronique. Elles permettent de dépasser les limites des technologies sur substrat silicium massif, en autorisant de faibles tensions d’utilisation et un gain en énergie significatif. En effet, les transistors à semi-conducteurs à grille métallique (MOSFET) avec un substrat totalement déplété (FDSOI) conduisent à des courants de fuites faible et améliorent la variabilité ce qui permet de diminuer les tensions d’alimentation en particulier pour les applications SRAM. A partir du nœud 14 nm, les transistors peuvent intégrer un canal SiGe, le diélectrique high-k et la grille métallique. Tous ces nouveaux modules de procédés technologiques rendent l’analyse électrique des transistors MOS ainsi que sa corrélation avec la technologie plus compliquées. Ce travail de thèse propose plusieurs nouvelles méthodologies d’extraction automatique et statistique de paramètres pour les empilements MOS FDSOI avancées. Ces méthodologies sont toutes basées sur des mesures de capacité par rapport à la tension (C-V) rendant compte du couplage capacitif entre grille métallique, canal et substrat face arrière. Avec de telles caractéristiques C-V, des méthodologies fiables sont proposées pour l’épaisseur d’oxyde de grille équivalente (EOT), le travail effectif de la grille métallique FDSOI (WFeff), ainsi que d’autres paramètres comme les épaisseurs du canal (tch) et de l’oxyde enterré (tbox) ainsi que l’affinité électronique efficace (Xeff) du substrat face arrière qui inclut les différents effets électrostatique à l’œuvre dans l’oxyde enterré et à ses interfaces. Ces différentes méthodologies ont été validées par des simulations quantiques. La force de l’analyse expérimentale a été de contrôler la cohérence des extractions obtenues sur tout un ensemble de transistors MOS obtenus à partir de variation sur les différentes briques de base et de contrôler la cohérence des paramètres extraits
.Thin film technologies appear as reliable solutions for Nano electronics to go beyond bulk silicon technology limits, allowing lower power bias and thus energy harvesting. Indeed, Metal Oxide Semiconductors transistors (MOSFETs) with fully depleted substrate (FDSOI for ’Fully Depleted Silicon On Insulator’) allow low static off-currents and variability improvement that enable the use of power supply biases lower than with bulk silicon, especially for SRAMs. From 14nm nodes, FDSOI generations are including SiGe channel, high-k dielectric and metal gate. All these new process modules required for technology improvement also significantly increase the complexity of the MOS devices electrical analysis and meanwhile its correlation with technology. This PhD study propose different novel methodologies for automatic and statistical parameter extraction of advanced FDSOI MOS gate stack. These methodologies are all based on capacitance versus voltage (C-V) characteristics, obtained for the capacitive coupling between metal gate, channel and back side. With such C-V characteristics, reliable methodologies are proposed, leading to the extractions of the equivalent oxide thicknesses (EOT), the effective work function of the FDSOI metal gate (WFeff), but also other parameters such as channel and buried oxide thicknesses (tch, tbox) and an effective electron affinity of the substrate well (Xeff) that includes all electrostatic effects in the buried oxide and at its interfaces. Moreover, quantum simulations are considered in order to validate the different methodologies. For experimental analysis, the study has considered coherence and complementarity of different test structures as well as the impact of back substrate polarization
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Dřímalková, Lucie. "Elektrické charakteristiky diafragmového výboje v roztocích elektrolytů". Master's thesis, Vysoké učení technické v Brně. Fakulta chemická, 2011. http://www.nusl.cz/ntk/nusl-216707.

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The main object of this thesis is the diagnostics of the diaphragm discharge generated in water solutions containing supporting electrolytes (mostly NaCl), and description of particular processes before and after discharge breakdown by DC non-pulsed voltage up to 2 kV. Although many applications of electric discharge in liquids have been developed during the last years, the exact mechanism of the discharge ignition is not sufficiently known up to now. Based on this reason, this work is focused on the investigation of processes before the discharge ignition, breakdown parameters and the discharge itself both in the irregular and stable regime. The theoretical part of the work presents proposed mechanisms of the discharge generation in water solutions including the description of particular kinds of known discharges. Diaphragm discharge is one of many possible configurations of electrical discharges in liquids. In fact, electrical discharge in water forms non-thermal plasma, which is generated by high voltage, and many physical and chemical processes are started in plasma channels (so-called streamers). Among physical processes, high electrical field, shock waves and last but not least emission of electromagnetic radiation in visible and ultra-violet radiation belongs. The most important chemical processes are generation of various active species as hydrogen peroxide, and OH radical. Three batch plasma reactors using a diaphragm configuration with different total volume (4 l, 100 ml and 50 ml) are employed in the presented work. The discharge is created in an orifice (a pin-hole) in the dielectric barrier separating two electrode parts of the reactor. DC non-pulsed high voltage up to 4 kV is used for the discharge generation. Electrodes are made of stainless steel or platinum, and they are installed in parallel to the diaphragm in a variable distance from the dielectric barrier in each reactor part. The dielectric barrier is made of PET or Shapal-MTM ceramics with the variable thickness (0.2?2 mm). One pin hole st the diaphragm center with diameter of 0.2?1.5 mm are used in contemporary experiments. Time resolved characteristics of current and voltage are recorded using four-channel oscilloscope which detected their output values. Parameters are measured by the constantly increasing DC voltage with a step of 100 V. The solutions containing sodium chloride electrolyte are used at five different conductivities. Recorded time resolved characteristics determine breakdown moment, and describe current and voltage in particular parts within the static current-voltage curve. The breakdown appeared at lower applied voltage when the electrode distance is enhanced. However, the electrode distances higher than 4 cm does not induce any significant change of the breakdown voltage. The influence of pin-hole diameter is less obvious in the studied range, but a slight enhancement of breakdown voltage is observed with the increasing pin-hole diameter. Current-voltage characteristic curve moves towards lower voltage with the diaphragm thickness enhancement. The work compares the influence of conductivity change on current-voltage characteristics as well as the effect of inorganic salt kind. By the conductivity enhancement, the measured current-voltage curve moves towards lower voltage which means that the breakdown voltage is decreased. Sizes of the reactors do not have any effect on the processes before and after discharge breakdown.
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Haratek, Jiří. "Výpočet rozložení teplotního pole v elektrickém stroji". Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2017. http://www.nusl.cz/ntk/nusl-318865.

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This diploma thesis deals with methods used to determine the temperature field distribution within an electric machine. The first part is focused on methods of temperature measurement, generation and transfer of the thermal energy within the electric machine, asynchronous motor in particular. The thesis describes classical methods of temperature measurement and it also deals with ANSYS Workbench finite element method for thermal analysis of the motor. The final part of the thesis is focused on a comparation of all discussed methods with respect to results of thermal test for real asynchronous motor and concludes the most proper method.
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Horák, Luděk. "Analýza elektrických vlastností epoxidových pryskyřic s různými plnivy v teplotní a kmitočtové závislosti". Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2018. http://www.nusl.cz/ntk/nusl-376991.

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Presented master's thesis is focused on studying electroinsulating epoxy resin-based sealings. It describes the chemical composition, production, properties and measuring methods of basic electric quantities of these materials. The aim of the thesis is to compare several sets of samples of composite epoxy resins with different kinds of micro-ground siliceous sand as a filling. The temperature and frequency dependence of relative permittivity, dissipation factor and inner resistivity are measured for given samples.
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Mittner, Ondřej. "Určování velikosti plochy a rozměrů vybraných objektů v obraze". Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2010. http://www.nusl.cz/ntk/nusl-218637.

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The master’s thesis describes hardware opto-electronic instruments for contactless measurement of surfaces. It concentrates on instruments used for opto-electrical transformation of a taking scene and software processing of digital pictures. It presents selected methods of pre-processing, segmenting and following final modifications of these pictures. Then it deals with measuring of areas of surfaces and sizes of selected objects in these pictures and conversion of results from pixels to SI system of units. Possible divergences of measuring are described as well. A flow chart of a program for automatic and manual measuring of surfaces and sizes of objects in a picture, which is commented in detail, is a part of the thesis. The main product of this thesis is application Merovo, which provides measuring of an area and proportions of included objects. This application is analysed and described in detail in this thesis.
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Kolacia, Tomáš. "Měření elektrických veličin v distribučních sítích 22 kV a 0,4 kV s disperzními zdroji". Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2015. http://www.nusl.cz/ntk/nusl-221196.

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This thesis concerns monitoring in Middle- and Low-Voltage distribution systems penetrated by distributed generation. Monitoring itself means measuring voltages and power flows and sending relevant data to the supervisory system. The first part of the thesis describes distribution systems with differences between individual voltage levels. The following chapter is focused on consequences of high share of renewable energy sources in distribution systems. Most of the problems are partially resolved by technical conditions for connection of the new power sources. However, difficulties with voltage regulation and uncontrolled power flows to higher voltage levels remain. These are the reasons for measuring voltages and currents in medium voltage networks. Second to last subhead of this chapter is dedicated to possible benefits of monitoring. The fourth part of the thesis deals with voltage and current sensors with their advantages and disadvantages. The best suitable devices are chosen in the end of the chapter. It is crucial to mention that sensors are only part of measuring system. Analog outputs from current or voltage transformers need to be converted to digital signal and further processed. After that required quantities are finally sent. Properties of these circuit cards are described in the sixth chapter. Following part aims to define a certain key that will determine the suitable locations for installation of the measurement. The final part of the thesis compares measured voltages and power flows from real 22 kV network with calculated values from computer program PAS DAISY Bizon.
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Spradlin, Joshua K. "A Study on the Nature of Anomalous Current Conduction in Gallium Nitride". VCU Scholars Compass, 2005. http://scholarscompass.vcu.edu/etd/709.

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Current leakage in GaN thin films limits reliable device fabrication. A variety of Ga and N rich MBE GaN thin films grown by Rf, NH3, and Rf+ NH3, are examined with electrical measurements on NiIAu Schottky diodes and CAFM. Current-voltage (IV) mechanisms will identify conduction mechanisms on diodes, and CAFM measurements will investigate the microstructure of conduction in GaN thin films. With CAFM, enhanced conduction has been shown to decorate some extended defects and surface features, while CAFM spectroscopy on a MODFET structure indicates a correlation between extended defects and field conduction behavior at room temperature. A remedy for poor conduction characteristics is presented in molten KOH etching, as evidenced by CAFM measurements, Schottky diodes, and MODFET's. The aim of this study is to identify anomalous conduction mechanisms, the likely cause of anomalous conduction, and a method for improving the conduction characteristics. Keywords: 111-Nitride, 111-V, Gallium Nitride, GaN, Electrical Properties, Conduction, Conductivity, Mobility, Hall Measurements, Resistivity, Schottky Diode, Modulation Doped Field Effect Transistor (MODFET), Conductive Atomic Force Microscopy (AFM), Defects, Molten Potassium Hydroxide (KOH) etching, Silvaco, Atlas, and Illumination.
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Halfar, Lukáš. "Automatizované měření asynchronního motoru pomocí LabVIEW". Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2016. http://www.nusl.cz/ntk/nusl-242151.

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The main purpose of the thesis Automatic measurement of induction machine using LabVIEW was to develope an automated measuring system, which is used to perform tests of induction motors. The algorithm of the system is programmed in LabVIEW. In the practical part of this thesis, a measurement of the motor Atas Elektromotory Náchod a.s. T22VT512 is carried out, in order to verificate functions of the algorithm, and to perform tests of the motor to analyse losses. Another part of the work is dedicated to the electromagnetic calculation of the motor T22VT512. For this purpose, two softwares with different principles of calculation have been used. Firstly, the calculation is solved by an analytical based software called RMxprt. Secondly, the software Maxwell 2D is used to make the calculation of electric and magnetic fields by the finite element method.
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Dřímalková, Lucie. "Diagnostika diafragmového výboje ve vodných roztocích a jeho aplikace pro povrchovou úpravu nanomateriálů". Doctoral thesis, Vysoké učení technické v Brně. Fakulta chemická, 2019. http://www.nusl.cz/ntk/nusl-402110.

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The exact mechanism of the discharge in liquids ignition is not sufficiently known up to now. Although during the last years was achieved the great progress and overloading which some of them are written in this theoretical part of thesis. This thesis is divided into two experimental parts. When the first part deals with diagnostics of diaphragm discharge in electrolyte solutions and the second part is focused on its use for uncoiling (higher homogenization) of carbon nanotubes in solutions. In experiment 1, three different sized (4 l, 100 ml, 50 ml) diaphragm discharge configurations were used to diagnose diaphragm discharge in electrolyte solutions. Diagnostics is done through current and voltage waveforms with the addition of synchronized ICCD camera images that have been connected to a four-channel oscilloscope. The V-A characteristic can be described by three events occurring in the electrolyte solution with a gradual increase in voltage. Slowly increasing of the voltage in the solution leads first to electrolysis. The next phase is the formation of microbubbles or bubbles, which is characteristic of the curve by a slight decrease in the increase of the current passing between electrodes. The sudden increase in the current flow is characteristic of the last phase, namely the discharge phase. The distance of the electrodes from the diaphragm does not significantly affect the V-A characteristic. The higher diameter of the pin hole, therefore, has a higher voltage, but this does not affect the origin of bubble generation or breakdown. The higher thickness of diaphragm, the higher voltage is needed to the beginning of the bubbles generation, and consequently the discharge breakdown. Comparison of the voltage of the start generation of the bubbles and breakdown for PET diaphragms and diaphragms from the ceramic there was no mark able difference. One of the most important parameters is the conductivity of the electrolyte solution. The lower voltage is needed for the start generation of the bubbles at the higher solution conductivity, and also the discharge generation is observed at a lower breakdown voltage. The second experimental part is focused on the study of the diaphragm discharge effect on carbon nanotubes. A specially designed U-shaped reactor is used to modify carbon nanoparticles. Tap water and aqueous solutions of organic compounds are used as the electrolytic solutions. The discharge is generated by a non-pulsed DC high source with a voltage in the range of 0-2.8 kV supplied to platinum electrodes located in the electrolyte solution. The experimental results have shown that the diaphragm discharge has positive effects on the disintegration of clusters and agglomerates of carbon nanotubes. The primary effect on disintegration is probably the shock waves generated by the discharge. It turned out that it depends on the electrode configuration, where the treatment in anode space has far greater effects than the treatment in cathode half of the reactor. Effects of carbon nanotubes disintegration in solution are long-lasting and the treatment effect is not loosed after several months. There were detected no significant changes in the structure of plasma-treated nanotubes by Infra-red spectroscopy.
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Ahmed, Mustafa M. Abdalla. "Alternating-Current Thin-Film Electroluminescent Device Characterization". Doctoral thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2008. http://www.nusl.cz/ntk/nusl-233432.

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Jádrem této disertační práce bylo studovat optické a elektrické charakteristiky tenkovrstvých elektroluminiscenčních součástek řízených střídavým proudem (ACTFEL) a zejména vliv procesu stárnutí luminiforů na jejich optické a elektrické vlastnosti. Cílem této studie měl být příspěvek ke zvýšení celkové účinnosti luminoforů, vyjádřené pomocí jasu, účinnosti a stability. Vzhledem k tomu, že současnou dominantní technologií plochých obrazovek je LCD, musí se další alternativní technologie plošných displejů porovnávat s LCD. Výhodou ACTFEL displejů proti LCD je lepší rozlišení, větší teplotní rozsah činnosti, větší čtecí úhel, či možnost čtení při mnohem vyšší intenzitě pozadí. Na druhou stranu je jejich nevýhodou vyšší energetická náročnost, problém s odpovídající barevností tří základních barev a podstatně vyšší napětí nutné pro činnost displeje. K dosažení tohoto cíle jsme provedli optická, elektrická a optoelektrická měření ACTFEL struktur a ZnS:Mn luminoforů. Navíc jsme studovali vliv dotování vrstvy pomocí KCl na chování mikrostruktury a na elektroluminiscenční vlastnosti (zejména na jas a světelnou účinnost) ZnS:Mn luminoforů. Provedli jsme i některá, ne zcela obvyklá, měření ACTFEL součástek. Vypočítali jsme i rozptylový poměr nabitých barevných center a simulovali transportní charakteristiky v ACTFEL součástkách. Studovali jsme vliv stárnutí dvou typů ZnS:Mn luminoforů (s vrstvou napařenou či získanou pomocí epitaxe atomových vrstev) monitorováním závislostí svítivost-napětí (L-V), velikost vnitřního náboje - elektrické pole luminoforu (Q-Fp) a kapacitance-napětí (C-V) ve zvolených časových intervalech v průběhu stárnutí. Provedli jsme krátkodobá i dlouhodobá měření a pokusili jsme se i o vizualizaci struktury luminoforu se subvlnovým rozlišením pomocí optického rastrovacího mikroskopu pracujícího v blízkém poli (SNOM). Na praktickém případu zeleného Zn2GeO4:Mn (2% Mn) ACTFEL displeje, pracujícího při 50 Hz, jsme také studovali stabilitu svítivosti pomocí měření závislosti svítivosti na napětí (L-V) a světelné účinnosti na napětí (eta-V). Přitom byl zhodnocen význam těchto charakteristik. Nezanedbatelnou a neoddělitelnou součástí této práce je i její pedagogický aspekt. Předložený text by mohl být využit i jako učebnice pro studenty na mé univerzitě v Lybii.
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Książki na temat "Electrical measurements C-V and G-V"

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B, Shaub I͡U. Novye metody ėlektrometrii v morskikh issledovanii͡akh. Moskva: "Nauka", 1985.

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Zimin, E. F. Izmerenie parametrov ėlektricheskikh i magnitnykh poleĭ v provodi͡a︡shchikh sredakh. Moskva: Ėnergoatomizdat, 1985.

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Nauchno-prakticheskai︠a︡ konferent︠s︡ii︠a︡ Metrologii︠a︡ ėlektricheskikh izmereniĭ v ėlektroėnergetike (10th 2007 Moscow, Russia). Metrologii︠a︡ ėlektricheskikh izmereniĭ v ėlektroėnergetike: Doklady seminara, normativno-pravovai︠a︡ baza metrologii, informat︠s︡ii︠a︡ o kompanii︠a︡kh. Moskva: DialogĖlektro, 2007.

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Segalʹ, A. M. Poverkhnostnyĭ ėffekt v tokoprovodakh i ėlementakh ėlektricheskikh apparatov. Sankt-Peterburg: Ėnergoatomizdat, Sankt-Peterburgskoe otd-nie, 1992.

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Protasevich, E. T. Novye i︠a︡vlenii︠a︡ v fizike gazovogo razri︠a︡da i radiofizike. Tomsk: Izd-vo Tomsk. politekhn. universiteta, 2002.

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Protasevich, E. T. Novye i︠a︡vlenii︠a︡ v fizike gazovogo razri︠a︡da i radiofizike. Tomsk: Izd-vo Tomsk. politekhn. universiteta, 2002.

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Sobolev, Valentin Viktorovich. Metody vychislitelʹnoĭ fiziki v teorii tverdogo tela: Ėlektronnai͡a︡ struktura poluprovodnikov. Kiev: Nauk. dumka, 1988.

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Sobolev, Valentin Viktorovich. Metody vychislitelʹnoĭ fiziki v teorii tverdogo tela: Ėlektronnai͡a︡ struktura dikhalʹkogenidov redkikh metallov. Kiev: Nauk. dumka, 1990.

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Dhiman, Rohit, i Rajeevan Chandel. VLSI and Post-CMOS Electronics: Devices, Circuits and Interconnects, Volume 2. Institution of Engineering & Technology, 2019.

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Dhiman, Rohit, i Rajeevan Chandel. VLSI and Post-CMOS Electronics: Design, Modelling and Simulation, Volume 1. Institution of Engineering & Technology, 2019.

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Części książek na temat "Electrical measurements C-V and G-V"

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Azarov, Alexander, Anders Hallén i Henry H. Radamson. "Electrical Characterization of Semiconductors: I–V, C–V and Hall Measurements". W Analytical Methods and Instruments for Micro- and Nanomaterials, 197–240. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-26434-4_7.

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Davies, Richard J., Mary K. Brumfield i Maribeth Pierce. "Noninvasive Measurement of the Electrical Properties of Breast Epithelium During the Menstrual Cycle: A Potential Biomarker for Breast Cancer Risk". W Hormonal Carcinogenesis V, 297–304. New York, NY: Springer New York, 2008. http://dx.doi.org/10.1007/978-0-387-69080-3_27.

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Ren, Bingyan, Bei Guo, Yan Zhang, Bing Zhang, Hongyuan Li i Xudong Li. "Electrical Characterization and Measurements of Sin Thin Films On Crystalline Silicon Substrates By Pecvd". W Proceedings of ISES World Congress 2007 (Vol. I – Vol. V), 1164–66. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-75997-3_231.

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Srivastava, Ajay Kumar. "Analysis and TCAD Simulation for C/V, and G/V Electrical Characteristics of Gated Controlled Diodes for the AGIPD of the EuXFEL". W Si Detectors and Characterization for HEP and Photon Science Experiment, 135–48. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-19531-1_10.

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Piotto, M., A. N. Longhitano, P. Bruschi, M. Buiat, G. Sacchi i D. Stanzial. "Design and Fabrication of a Compact p–v Probe for Acoustic Impedance Measurement". W Lecture Notes in Electrical Engineering, 53–56. Cham: Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-00684-0_10.

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Watcharinporn, Orrathai, Surachai Dechkunakorn, Niwat Anuwongnukroh, Chanjira Sinthanayothin, Peerapong Santiwong, Wisarut Bholsithi i Wanna Suchato. "Assessment of the Accuracy and Reliability of Cephsmile v.2 in Cephalograms and Model Measurements". W Lecture Notes in Electrical Engineering, 413–22. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-27323-0_52.

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Ghivela, Girish Chandra, Prince Kumar i Joydeep Sengupta. "Numerical Measurement of Oscillating Parameters of IMPATT Using Group IV and Group III–V Materials". W Lecture Notes in Electrical Engineering, 405–12. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-32-9775-3_37.

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Stanzial, D., M. Buiat, G. Sacchi, P. Bruschi i M. Piotto. "Functional Comparison of Acoustic Admittance Measurements with a CMOS-Compatible p–v Microprobe and a Reference One". W Lecture Notes in Electrical Engineering, 57–60. Cham: Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-00684-0_11.

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Onnes, H. Kamerlingh. "Further Experiments with Liquid Helium. D. On the Change of the Electrical Resistance of Pure Metals at very low Temperatures, etc. V. The Disappearance of the resistance of mercury". W Through Measurement to Knowledge, 264–66. Dordrecht: Springer Netherlands, 1991. http://dx.doi.org/10.1007/978-94-009-2079-8_16.

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Gupta, Divya, Usha Rani, Rahul Singhal i Sanjeev Aggarwal. "Oblique Ar+ Sputtered SiC Thin Films: Structural, Optical, and Electrical Properties". W Ion Beam Technology and Applications [Working Title]. IntechOpen, 2023. http://dx.doi.org/10.5772/intechopen.112928.

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State-of-the-art experimental facility 200 kV ion accelerator, with energy range of 30–200 kV has been running successfully at Ion Beam Center, KUK. The versatility of this facility lies in providing single charge state and large area irradiation in a single step. In this regard, present work investigates the structural, optical, and electrical behavior of as-deposited and argon-sputtered SiC thin films at varying fluences keeping ion incidence at 500. Raman measurements reveal that the opening of sp2 sites on a-C results in increased sp3 content in the surface layers. Both FWHM of G peak and I(D)/I(G) ratio decrease with increasing argon fluence. UV-Vis-NIR spectroscopy reveals an increase in the optical absorption and a shifting of absorption edge toward longer wavelengths. I-V characteristics reveal ohmic behavior of all the samples in the voltage range of −5 to +5 V. The conductivity of all the samples is found to decrease with increase in argon ion fluence. The observed structural transformations are attributed to the different degree of sputtering yield of silicon and carbon at different argon ion fluences.
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Streszczenia konferencji na temat "Electrical measurements C-V and G-V"

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Hauser, J. R., i K. Ahmed. "Characterization of ultra-thin oxides using electrical C-V and I-V measurements". W CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY. ASCE, 1998. http://dx.doi.org/10.1063/1.56801.

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Richardson, W. H., i Y. Yamamoto. "Quantum Correlation Between the Junction Voltage Fluctuation and the Photon Number Fluctuation in a Semiconductor Laser". W OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1990. http://dx.doi.org/10.1364/oam.1990.pdp15.

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Quantum correlation between two observables are of fundamental importance in the measurement of quantum mechanical systems. We introduce here a new type of quantum correlation, that between the junction voltage fluctuation v ^ n and the external field amplitude fluctuation Δ r ^ , in a semiconductor laser. A measure of the correlation, which originates in the dipole interaction between the internal field and the electron-hole system, is given by C v r = 〈 ( v ^ n Δ r ^ † ) s y m 〉 / ( 〈 v ^ n 2 〉 〈 Δ r ^ 2 〉 ) 1 / 2 . At the pump rate required to produce a beam at the standard quantum limit (SQL), C vr is − 1 / 2 , while classically the correlation is abscent. In the experiment, the amplified a.c junction voltage was combined with the voltage associated with the photocurrent, due to the output field, at a wideband 180° hybrid. Seperate measurement of the spectral densities of the sum and difference of the amplitude S v n ± g r Δ r = ( 〈 v ^ n ± g r Δ r ^ 〉 2 ) taken from the respective ports of the hybrid TEE confirm, for the first time, that the correlation is negative. The relative electrical gain is denoted by g r . Additionally S v n + g r Δ r was less than ( 〈 v ^ n 2 〉 + g r 2 〈 Δ r ^ 2 〉 ) . This is indicative of a quantum correlation, since the laser amplitude noise was already below the SQL. Furthermore S v n + g r Δ r was less than g r 2 S Δ r , indicating that the correlation already in the quantum regime has crossed the so called second threshold. The optimum measured C vr was −0.40 ±.02.
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Lai, LiLung, Nan Li, Qi Zhang, Tim Bao i Robert Newton. "Nanoprobing Applications with Capacitance-Voltage and Pulsed Current-Voltage Measurements for Device Failure Analysis". W ISTFA 2015. ASM International, 2015. http://dx.doi.org/10.31399/asm.cp.istfa2015p0401.

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Abstract Owing to the advancing progress of electrical measurements using SEM (Scanning Electron Microscope) or AFM (Atomic Force Microscope) based nanoprober systems on nanoscale devices in the modern semiconductor laboratory, we already have the capability to apply DC sweep for quasi-static I-V (Current-Voltage), high speed pulsing waveform for the dynamic I-V, and AC imposed for C-V (Capacitance-Voltage) analysis to the MOS devices. The available frequency is up to 100MHz at the current techniques. The specification of pulsed falling/rising time is around 10-1ns and the measurable capacitance can be available down to 50aF, for the nano-dimension down to 14nm. The mechanisms of dynamic applications are somewhat deeper than quasi-static current-voltage analysis. Regarding the operation, it is complicated for pulsing function but much easy for C-V. The effective FA (Failure Analysis) applications include the detection of resistive gate and analysis for abnormal channel doping issue.
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Iyer, D., A. Messinger, R. Crowder, Y. Zhang, O. Amster, S. Friedman, Y. Yang i F. Stanke. "Measurement of Dielectric Constant and Doping Concentration of a Cross-Sectioned Device by Quantitative Scanning Microwave Impedance Microscopy". W ISTFA 2017. ASM International, 2017. http://dx.doi.org/10.31399/asm.cp.istfa2017p0613.

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Abstract Scanning microwave impedance microscopy (sMIM) is an emerging technique that can provide detailed information beyond that of conventional scanning capacitance microscopy (SCM), and other electrical scanning probe microscopy (SPM) techniques, for the investigation and failure analysis (FA) of semiconductor devices. Integration of new dielectric materials at lower levels of the device structure with the need for quantification of dielectric and dopants in semiconductor devices with sub-micron spatial resolution pushes the practical boundaries of typical atomic force microscopy (AFM) electrical modes. sMIM can measure both linear and non-linear materials (insulators and doped semiconductors, respectively) simultaneously. sMIM has a linear response to log k (dielectric number) and log N (doping concentration) making it an ideal method for providing quantitative measurements of semiconductor devices over a large range of values. This work demonstrates an example of a practical application of sMIM for quantitative measurement of the dopant concentration profile in production semiconductor devices. A planar dopant calibration sample is used to calibrate the sMIM prior to performing the measurements on an “unknown” production device. We utilize nanoscale C-V data to establish a calibration curve for both n- and p-type carriers and apply the calibration curve to an “unknown” device, presenting the measurements in units of doping concentration.
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Baviere, R., i F. Ayela. "First Local Pressure Drops Measurements in Microchannels With Integrated Micromachined Strain Gauges". W ASME 2004 2nd International Conference on Microchannels and Minichannels. ASMEDC, 2004. http://dx.doi.org/10.1115/icmm2004-2406.

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The knowledge of the fundamental aspects of hydrodynamics at microscales is an exciting challenge. Some authors have published conflicting results concerning the friction and the thermal exchange coefficients, the transition to a turbulent flow regime (Qu et al. 2000, Mala and Di 1999, Papautsky et al. 1999). Some explanations, based on surface effects, have been proposed, but microeffects, if they are, are probably hidden by experimental artefacts. We aim at performing local measurements of pressure drops in monophasic microstreams. Precedent works (Baviere et al. 2003) have shown that a great care has to be taken with the intrepretation of anomalous or unexpected results, and that the metrological set up of these experiments is crucial. We have performed and tested cupro-nickel strain gauges micromachined on different sorts of silicon nitride membranes. The design of the gauges obeys an electrical Wheatstone bridge configuration. The experimental signals are in good agreement with the expected electromechanical response of the bridge. The sensitivity ranges from 50 to 100 μV/V/bar with a thermal drift below 0.011%.°C−1. Such sensors have been integrated along smooth and rough silicon microchannels with hydraulic diameter of 15 μm, and no deviation from the laminar regime has been observed with such local pressure sensors. The micromachining of these devices is described and the first local pressure drops measurements performed with deionized water of low electrical resistivity are presented and discussed.
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Croitoru, N., M. Zafrir, S. Amirhaghi i Z. Harzion. "Schottky-type photovoltaic junctions with transparent conductor films". W OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1985. http://dx.doi.org/10.1364/oam.1985.fr6.

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Junctions between transparent conductor (ITO) and single-crystal silicon or polycrystalline silicon (poly-Si) were prepared. Electrical I–V and C-V, as well as photovoltage decay (PVD) measurements, were performed. Data of open circuit voltage (Voc), short circuit current (Isc), fill factor (FF), efficiency (η), built-in potential (ϕ- bl ), and lifetime were obtained. It was found that the lifetime of photogenerated carriers in the poly-Si/ITO junction is much shorter than in single crystal. There are two types of recombination center that have an essential influence on the efficiency of the solar cells; those at the contact between ITO and the silicon; and those due to the grain boundaries (GB) between the crystallites in poly-Si. The solar cells were annealed, either by heating them in vacuum or by irradiation with the light of a Cd–Ne laser (441.6 nm). The annealing reduced the influence of the recombination centers at the contact, whereas those at the GB were not affected. Passivation of GB with iodine improved the characteristics of the solar cells. This improvement is attributed to the reduction of the recombination centers at GB. The influence of the annealing and passivation on the lifetime of this type of cell was studied by measuring PVD.
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Palanisamy, Vinothkumar, Jan Ketil Solberg, Bjarne Salberg i Per Thomas Moe. "Microstructure and Mechanical Properties of API 5CT L80 Casing Grade Steel Quenched From Different Temperatures". W ASME 2012 31st International Conference on Ocean, Offshore and Arctic Engineering. American Society of Mechanical Engineers, 2012. http://dx.doi.org/10.1115/omae2012-83937.

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The continuous development of line pipe and casing grade steels should be complemented by development of more effective welding methods. A special high temperature high speed forge welding technique called Shielded Active Gas Forge Welding (SAG-FW) has been developed to weld steel pipes for a range of applications. This article focuses on the microstructure development at different welding conditions in L80 steel with 0.25%C. Specimens with dimensions 100 mm × 11 mm × 6 mm were extracted from the wall of a large diameter L80 pipe. A SMITWELD thermal simulator was used to simulate heat treatment conditions using electrical resistance heating. The specimens were heated to peak temperatures ranging from 600°C to 1350°C within 10 s and subsequently quenched to 50°C at a constant rate of 60°C/s to simulate the heat-affected zone conditions for the real SAG-FW process. Martensite with small fractions of bainite was observed for higher peak temperatures. Mixed microstructures were observed in the specimens heated in the intercritical temperature range. Microstructures and phase fractions developed after heating to different peak temperatures have been analyzed by optical microscopy and scanning electron microscopy. Charpy V-notch tests and Vickers microhardness measurements have been carried out for the weld simulated specimens. The observed toughness values, hardness values, microstructures and phase fractions have been correlated to the respective weld simulation parameters.
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Carlton, Hayden, Md Maksudul Hossain, Arman Ur Rashid, Yuxiang Chen, Alan Mantooth, Asif Imran, Fang Luo, John Harris, Alexis Krone i David Huitink. "Thermal and Electrical Co-Optimization of a Multi-Chip Double-Sided Cooled GaN Module". W ASME 2021 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. American Society of Mechanical Engineers, 2021. http://dx.doi.org/10.1115/ipack2021-72726.

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Abstract The need for high power density electrical converters/inverters dominates the power electronics realm, and wide bandgap semiconducting materials, such as gallium nitride (GaN), provide the enhanced material properties necessary to drive at higher switching speeds than traditional silicon. However, lateral GaN devices introduce packaging difficulties, especially when attempting a double-sided cooled solution. Herein, we describe optimization efforts for a 650V/30A, GaN half-bridge power module with an integrated gate driver and double-sided cooling capability. Two direct bonded copper (DBC) substrates provided the primary means of heat removal from the module. In addition to the novel topology, the team performed electrical/thermal co-design to increase the multi-functionality of module. Since a central PCB comprised the main power loop, the size and geometry of the vias and copper traces was analyzed to determine optimal functionality in terms of parasitic inductance and thermal spreading. Thermally, thicker copper layers and additional vias introduced into the PCB also helped reduce hot spots within the module. Upon fabrication of the module, it underwent electrical characterization to determine switching performance, as well as thermal characterization to experimentally measure the total module’s thermal resistance. The team successfully operated the module at 400 V, 30 A with a power loop parasitic inductance of 0.89 nH; experimental thermal measurements also indicated the module thermal resistance to be 0.43 C/W. The overall utility of the design improved commensurately by introducing simple, yet effective electrical/thermal co-design strategies, which can be applied to future power modules.
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Ducharme, Stephen, Jack Feinberg i Ratnakar Neurgaonkar. "Electrooptic and piezoelectric measurements in photorefractive materials". W OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1986. http://dx.doi.org/10.1364/oam.1986.mv6.

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We have measured the low frequency (undamped) electrooptic and piezoelectric coefficients in several photorefractive crystals using interferometric techniques. The electrooptic and piezoelectric measurements were independent of the frequency (in the range from 10 Hz to 100 kHz) and linear in the magnitude (in the range from 0.1 to 200 V/cm) of the applied electric field. The electrooptic coefficients measured in melt-grown BaTiO3 single crystals at λ = 5145 Å and at T = 23°C are r13 = 33 ± 2 pm/V and r33=124 ± 6 pm/V. The piezoelectric coefficient d13 = 57 ± 3 pm/V was measured separately. The combined Pockels coefficient r C = 84 ± 5 pm/V was measured independently and is in good agreement with the value r c ≡ r33 − (n1/n3)3r13 = 84 ± 5 pm/V computed from the above values of r13 and r33. (n1, and n3 are the ordinary and extraordinary indices of refraction, respectively, of tetragonal BaTiO3.) Similar measurements at λ = 5145 Å in Sr0.6Ba0.4Nb2O6 single crystals yield the electrooptic coefficients r13 = 55 ± 3 pm/V, r33 = 224 ± 11 pm/V, and the piezoelectric coefficient d13 = 47 ± 3 pm/V. The electrooptic and piezoelectric coefficients of LiNbO3 single crystals were also measured. As an independent check on this data, we also measured the coupling between two optical beams in these photorefractive crystals. The ratio of the measured coupling strengths for different optical polarizations agrees with theory using the electrooptic coefficients measured above.
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Othman, Nur Tantiyani Ali, Je-Eun Choi i Masahiro Takei. "Electrical Tomography Sensing and Dielectrophoresis in Microchannel for 3D Particle Mixing". W ASME 2011 9th International Conference on Nanochannels, Microchannels, and Minichannels. ASMEDC, 2011. http://dx.doi.org/10.1115/icnmm2011-58232.

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The present study describes the electrical tomography sensing and dielectrophoresis (DEP) force for visualize the 3D particle mixing in the microchannel system. In the presence of non-uniform electric fields generated by point microelectrodes, the dynamic distribution behaviors of a polystyrene particle and deionized water had been investigated in this system. Microchannel was fabricated with five cross sections where 12 electrodes were installed for each measurement plane. In this experiment, the relationship between electric field frequency and DEP force of particles are calculated at different electric frequencies and diameter of particles. The applied electric field intensities are E = ±1 V/mm, ±3 V/mm and ±5 V/mm while the electric field frequencies are f = 1 kHz, 10 kHz, 100 kHz and 1 MHz and the diameter of particles are 1.3μm, 1.5μm and 2.0μm are investigated in this experiment. Simultaneously, imaged by manipulating tomography sensing at cross section A, C and D and the coupled DEP forces at cross section B and D, the particles flowing had been visualized and concentrate uniformly at near the outlets. The electrical capacitances and DEP forces between the electrode pairs of the microchannel were measured and the ECT tomograms representing the particle distribution were constructed from the measured capacitance data for each cross section in microchannel.
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