Gotowa bibliografia na temat „Dry etch”
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Artykuły w czasopismach na temat "Dry etch"
Lee, Jong Seok, Geun Min Choi, Ji Nok Jung, Dong Duk Lee, Gin Yung Hur, Jai Ho Lee, Che Hyuk Chi i Dae Hee Gimm. "Development of a Integrated Dry/Wet Hybrid Cleaning System". Solid State Phenomena 195 (grudzień 2012): 21–24. http://dx.doi.org/10.4028/www.scientific.net/ssp.195.21.
Pełny tekst źródłaCastro, Marcelo S. B., Sebastien Barnola i Barbara Glück. "Selective and Anisotropic Dry Etching of Ge over Si". Journal of Integrated Circuits and Systems 8, nr 2 (28.12.2013): 104–9. http://dx.doi.org/10.29292/jics.v8i2.380.
Pełny tekst źródłaPARK, JONG CHEON, JIN KON KIM, TAE GYU KIM, DEUG WOO LEE, HYUN CHO, HYE SUNG KIM, SU JONG YOON i YEON-GIL JUNG. "DRY ETCHING OF SnO2 AND ZnO FILMS IN HALOGEN-BASED INDUCTIVELY COUPLED PLASMAS". International Journal of Modern Physics B 25, nr 31 (20.12.2011): 4237–40. http://dx.doi.org/10.1142/s0217979211066660.
Pełny tekst źródłaLenzi, Tathiane Larissa, Fabio Zovico Maxnuck Soares i Rachel de Oliveira Rocha. "Does Bonding Approach Influence the Bond Strength of Universal Adhesive to Dentin of Primary Teeth?" Journal of Clinical Pediatric Dentistry 41, nr 3 (1.01.2017): 214–18. http://dx.doi.org/10.17796/1053-4628-41.3.214.
Pełny tekst źródłaSzweda, Roy. "Dry etch processes for optoelectronic devices". III-Vs Review 14, nr 1 (styczeń 2001): 42–47. http://dx.doi.org/10.1016/s0961-1290(01)89007-4.
Pełny tekst źródłaChiang, Chao-Ching, Xinyi Xia, Jian-Sian Li, Fan Ren i Stephen J. Pearton. "Selective Wet and Dry Etching of NiO over β-Ga2O3". ECS Transactions 111, nr 2 (19.05.2023): 73–83. http://dx.doi.org/10.1149/11102.0073ecst.
Pełny tekst źródłaAltamirano-Sanchez, Efrain, Yoko Yamaguchi, Jeffrey Lindain, Naoto Horiguchi, Monique Ercken, Marc Demand i Werner Boullart. "Dry Etch Fin Patterning of a Sub-22nm Node SRAM Cell: EUV Lithography New Dry Etch Challenges". ECS Transactions 34, nr 1 (16.12.2019): 377–82. http://dx.doi.org/10.1149/1.3567607.
Pełny tekst źródłaFarrow, Woodrow D., i Jay Richman. "Summary Abstract: Advanced dry etch processing with a DRY pump". Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 6, nr 3 (maj 1988): 1263. http://dx.doi.org/10.1116/1.575686.
Pełny tekst źródłaHeidenblut, Maria, D. Sturm, Alfred Lechner i Franz Faupel. "Characterization of Post Etch Residues Depending on Resist Removal Processes after Aluminum Etch". Solid State Phenomena 145-146 (styczeń 2009): 349–52. http://dx.doi.org/10.4028/www.scientific.net/ssp.145-146.349.
Pełny tekst źródłaKang, In Ho, Wook Bahng, Sung Jae Joo, Sang Cheol Kim i Nam Kyun Kim. "Post Annealing Etch Process for Improved Reverse Characteristics of 4H-SiC Diode". Materials Science Forum 615-617 (marzec 2009): 663–66. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.663.
Pełny tekst źródłaRozprawy doktorskie na temat "Dry etch"
Nilgianskul, Tan. "Control of a semiconductor dry etch process using variation and correlation analyses". Thesis, Massachusetts Institute of Technology, 2016. http://hdl.handle.net/1721.1/107025.
Pełny tekst źródłaThis electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student-submitted PDF version of thesis.
Includes bibliographical references (pages 67-69).
Statistical process control (SPC) is one of the traditional quality control methods that, if correctly applied, can be effective to improve and maintain quality and yield in any manufacturing facility. The purpose of this project is to demonstrate how to effectively apply SPC to a dry etch process (in this case plasma ashing), at Analog Devices, Inc., a company that runs large-scale fabrication sites in the Boston area. This thesis focuses on spatial and run-to-run variation across multiple measurement sites on a wafer and validates the assumptions of normality and correlation between sites within a wafer in order to justify and confirm the value of employing SPC theories to the plasma ashing process. By plotting control charts on past data, outlier data points are detected using Analog's current monitoring system. Further, irregularities in the process that would not have been detected using traditional x-bar Shewhart charts are detected by monitoring non-uniformity. Finally, cost analysis suggests that implementing SPC would be a modest investment relative to the potential savings.
by Tan Nilgianskul.
M. Eng. in Manufacturing
Muthukrishnan, N. Moorthy. "Characterization and modeling of dry etch processes for titanium nitride and titanium films in Cl₂/N₂ and BCl₃ plasmas". Diss., This resource online, 1996. http://scholar.lib.vt.edu/theses/available/etd-06062008-151045/.
Pełny tekst źródłaCatala, Antoine. "Gravure Plasma du Nitrure de Gallium pour la réalisation de micro LEDs à hautes performances". Electronic Thesis or Diss., Université Grenoble Alpes, 2024. http://www.theses.fr/2024GRALT041.
Pełny tekst źródłaThrough the development of the internet of things and virtual and augmented reality, increase of microdisplay need appeared. Gallium Nitride (GaN) microLED (µLED) seem to be a promising solution thanks to its electro-optical properties like its wide direct band gap. Nevertheless, GaN µLED efficiency drop significantly when their size shrinks, due to damages induced by singularization process.This thesis aims to understand GaN damages apparition during the plasma etching process and then their reduction. To study mesas sidewall damage after the etching, a new experimental set up using cathodoluminescence has been developed. A standard process using Cl2/BCl3/Ar chemistry is studied to characterize GaN damages. Then through a dichotomy of the chemistry, chlorine turns out to be the main damaging species within the plasma, both on sidewall and bottom trench. Plasma parameters (density and ion bombardment energy) and the damaging effect of the hard mask material have been studied with a plasma chemistry reduced to chlorine only. Noting divergent results with the ones reported in the literature, a comparative study between plan c Ga and N polarities have been carried. This study highlight that N face GaN is mainly damaged by plasma chemical component (reactive species) while Ga face GaN is by plasma physical component (ion bombardment). An etching mechanism is finally proposed to explain those differences
Villa, Katherine. "The use of wet-to-dry dressings for mechanical debridement". Honors in the Major Thesis, University of Central Florida, 2013. http://digital.library.ucf.edu/cdm/ref/collection/ETH/id/928.
Pełny tekst źródłaB.S.N.
Bachelors
Nursing
Nursing
Hamlett, Anna. "Human trafficking : a modern day slavery". Honors in the Major Thesis, University of Central Florida, 2009. http://digital.library.ucf.edu/cdm/ref/collection/ETH/id/1270.
Pełny tekst źródłaBachelors
Sciences
Political Science
Torres, Gabriella. "An exploratory study : romanticism in modern day men and women". Honors in the Major Thesis, University of Central Florida, 2010. http://digital.library.ucf.edu/cdm/ref/collection/ETH/id/1509.
Pełny tekst źródłaBachelors
Sciences
Psychology
Miniello, Jonathan. "Missing the consequences misperceptions of the 1967 six-day israeli-arab war". Honors in the Major Thesis, University of Central Florida, 2011. http://digital.library.ucf.edu/cdm/ref/collection/ETH/id/478.
Pełny tekst źródłaB.S.
Bachelors
Sciences
Psychology
Ahmed, Shameem. "Day in and day out : women's experience in the family and the reconstruction of their secondary status". Thesis, McGill University, 1991. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=59959.
Pełny tekst źródłaGuijarro, de Ortiz Myriam. "Literacy Activities that Parents of Preschool Children Attending Day Care Promote at Home and Community Settings". Honors in the Major Thesis, University of Central Florida, 2005. http://digital.library.ucf.edu/cdm/ref/collection/ETH/id/760.
Pełny tekst źródłaBachelors
Education
Exceptional Education
Alabed, Hadhom Mohamed. "The effects of fasting for a single day, and during Ramadan, upon performance". Thesis, Liverpool John Moores University, 2010. http://researchonline.ljmu.ac.uk/5958/.
Pełny tekst źródłaKsiążki na temat "Dry etch"
Deepak, Ranadive, i Society of Photo-optical Instrumentation Engineers., red. Dry etch technology: 9-10-September 1991, San Jose, California. Bellingham, Wash: SPIE, 1992.
Znajdź pełny tekst źródłaAndrews, Mark. Dry suit diver manual. [United States?]: PSA International, 2005.
Znajdź pełny tekst źródłaRowney, Eddie. The guide to dry stone walling. [Middlesbrough?]: E. Rowney, 2000.
Znajdź pełny tekst źródłaRoss, Kathy. Every day is Earth Day. Brookfield, Conn: Millbrook Press, 1994.
Znajdź pełny tekst źródłaHenry, Mitchell. Any day. Bloomington: Indiana University Press, 1997.
Znajdź pełny tekst źródłaRoss, Kathy. Every day is Earth Day: A craft book. Brookfield, Conn: Millbrook Press, 1994.
Znajdź pełny tekst źródłaRoss, Kathy. Every day is Earth Day: A craft book. Brookfield, Conn: Millbrook Press, 1995.
Znajdź pełny tekst źródłaEdward, Miller. Recycling day. New York: Holiday House, 2015.
Znajdź pełny tekst źródłaParker, Marjorie. Jasper's day. Toronto: Kids Can Press, 2002.
Znajdź pełny tekst źródłaParker, Marjorie. Jasper's day. Toronto: Kids Can Press, 2002.
Znajdź pełny tekst źródłaCzęści książek na temat "Dry etch"
van Roosmalen, A. J., J. A. G. Baggerman i S. J. H. Brader. "Etch Processes". W Dry Etching for VLSI, 99–135. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4899-2566-4_6.
Pełny tekst źródłaPearton, S. J., i R. J. Shul. "Dry Etch Damage in Widegap Semiconductor Materials". W Defects in Optoelectronic Materials, 87–143. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9780367811297-5.
Pełny tekst źródłaMansfield, William M. "Enhancement of Dry-Etch Resistance of Poly(butene-1 sulfone)". W Polymers for High Technology, 317–33. Washington, DC: American Chemical Society, 1987. http://dx.doi.org/10.1021/bk-1987-0346.ch027.
Pełny tekst źródłaClaes, Martine, Quoc Toan Le, J. Keldermans, E. Kesters, Marcel Lux, A. Franquet, Guy Vereecke i in. "Photoresist Characterization and Wet Strip after Low-k Dry Etch". W Solid State Phenomena, 325–28. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-46-9.325.
Pełny tekst źródłaSchaedeli, U., M. Hofmann, E. Tinguely i N. Münzel. "A Top-Surface Imaging Approach Based on the Light-Induced Formation of Dry-Etch Barriers". W ACS Symposium Series, 299–317. Washington, DC: American Chemical Society, 1995. http://dx.doi.org/10.1021/bk-1995-0614.ch020.
Pełny tekst źródłaIto, Hiroshi, Mitsuru Ueda i Mayumi Ebina. "Copolymer Approach to Design of Sensitive Deep-UV Resist Systems with High Thermal Stability and Dry Etch Resistance". W ACS Symposium Series, 57–73. Washington, DC: American Chemical Society, 1989. http://dx.doi.org/10.1021/bk-1989-0412.ch004.
Pełny tekst źródłaClaes, M., Vasile Paraschiv, S. Beckx, M. Demand, W. Deweerd, Sylvain Garaud, H. Kraus i in. "Selective Wet Removal of Hf-Based Layers and Post-Dry Etch Residues in High-k and Metal Gate Stacks". W Solid State Phenomena, 93–96. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/3-908451-06-x.93.
Pełny tekst źródłaBreuker, Remco E. "North Korean Slavery and Forced Labor in Present-Day Europe". W The Palgrave Handbook of Global Slavery throughout History, 643–60. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-13260-5_36.
Pełny tekst źródłaMohammed, S. G., M. Halliru, J. M. Jibrin, I. Kapran i H. A. Ajeigbe. "Impact Assessment of Developing Sustainable and Impact-Oriented Groundnut Seed System Under the Tropical Legumes (III) Project in Northern Nigeria". W Enhancing Smallholder Farmers' Access to Seed of Improved Legume Varieties Through Multi-stakeholder Platforms, 81–96. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-15-8014-7_6.
Pełny tekst źródłaLeape, Lucian L. "A Community of Concern: The Massachusetts Coalition for the Prevention of Medical Errors". W Making Healthcare Safe, 105–25. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-71123-8_8.
Pełny tekst źródłaStreszczenia konferencji na temat "Dry etch"
Cho, Kyoung Y., i Dong W. Im. "ECR plasma and etch characterization of photoresist dry etch processes". W Dry Etch Technology, redaktor Deepak Ranadive. SPIE, 1992. http://dx.doi.org/10.1117/12.56918.
Pełny tekst źródłaTurner, Terry R. "Correlation of real-time-monitored process module parameters and wafer results". W Dry Etch Technology, redaktor Deepak Ranadive. SPIE, 1992. http://dx.doi.org/10.1117/12.56921.
Pełny tekst źródłaNulty, James E., i Joseph A. Maher. "Application-specific integrated processing for ULSI". W Dry Etch Technology, redaktor Deepak Ranadive. SPIE, 1992. http://dx.doi.org/10.1117/12.56920.
Pełny tekst źródłaYoneda, Masahiro, K. Kawai, Hiroshi Miyatake, Nobuo Fujiwara, K. Nishioka i Haruhiko Abe. "Evaluation of silicon surface damage induced by plasma radiation". W Dry Etch Technology, redaktor Deepak Ranadive. SPIE, 1992. http://dx.doi.org/10.1117/12.56910.
Pełny tekst źródłaNamura, Takashi, Hirofumi Uchida, Hiroyuki Okada, Atsushi Koshio, Satoshi Nakagawa, Yoshihiro Todokoro i Morio Inoue. "Wafer charging in different types of plasma etchers". W Dry Etch Technology, redaktor Deepak Ranadive. SPIE, 1992. http://dx.doi.org/10.1117/12.56911.
Pełny tekst źródłaHasan, Zia, Joseph A. Maher, James E. Nulty i Larry Krynski. "In-situ auto ash: a key to reducing process-generated particles". W Dry Etch Technology, redaktor Deepak Ranadive. SPIE, 1992. http://dx.doi.org/10.1117/12.56912.
Pełny tekst źródłaReinhardt, Karen A., i Francois M. Dumesnil. "Characterization of silicon damage during LDD oxide spacer etch with the use of thermal-wave-modulated reflectance". W Dry Etch Technology, redaktor Deepak Ranadive. SPIE, 1992. http://dx.doi.org/10.1117/12.56913.
Pełny tekst źródłaMiyatake, Hiroshi, K. Kawai, Nobuo Fujiwara, Masahiro Yoneda, K. Nishioka i Haruhiko Abe. "Surface contamination control during plasma etching". W Dry Etch Technology, redaktor Deepak Ranadive. SPIE, 1992. http://dx.doi.org/10.1117/12.56914.
Pełny tekst źródłaTanimoto, Keisuke, Hiroyuki Komeda, Daisuke Takehara, Ryohei Kawabata i Hikou Shibayama. "Consideration on the resolution limit of the resist silylated process". W Dry Etch Technology, redaktor Deepak Ranadive. SPIE, 1992. http://dx.doi.org/10.1117/12.56915.
Pełny tekst źródłaNicolau, Dan V., Gheorghita Jinescu, Florin Fulga i Mircea V. Dusa. "Mathematical model of the plasma etching of resists containing silicon". W Dry Etch Technology, redaktor Deepak Ranadive. SPIE, 1992. http://dx.doi.org/10.1117/12.56916.
Pełny tekst źródłaRaporty organizacyjne na temat "Dry etch"
Ohta, Taisuke. LaB6 nanostructures - wet vs dry etch. Office of Scientific and Technical Information (OSTI), styczeń 2019. http://dx.doi.org/10.2172/1491599.
Pełny tekst źródłaZhang, Linlin, Xiaoming Xi, Xihua Liu, Xinjie Qu, Qing Wang, Haihao Cao, Limin Wang i in. Should aerobic and resistance training interventions for Multiple sclerosis be performed on the same day: A protocol for systematic review and network meta-analysis. INPLASY - International Platform of Registered Systematic Review and Meta-analysis Protocols, grudzień 2021. http://dx.doi.org/10.37766/inplasy2021.12.0126.
Pełny tekst źródłaMarlow, Thomas. PR-000-18COMP-R03 Damage Prevention Compendium. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), styczeń 2019. http://dx.doi.org/10.55274/r0011548.
Pełny tekst źródłaGreaney, Carrie. PR-000-18COMP-R04 Geohazards Compendium. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), styczeń 2019. http://dx.doi.org/10.55274/r0011549.
Pełny tekst źródłaMarlow, Thomas, Laurie Perry (Archived) i Carrie Greaney. PR-000-18COMP-R05 Horizontal Directional Drilling Compendium. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), styczeń 2019. http://dx.doi.org/10.55274/r0011550.
Pełny tekst źródłaMarlow, Thomas. PR-000-18COMP-R06 Pipeline Repair Compendium. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), styczeń 2019. http://dx.doi.org/10.55274/r0011551.
Pełny tekst źródłaMarlow, Thomas. PR-000-18COMP-R02 Composite Repairs Compendium. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), styczeń 2019. http://dx.doi.org/10.55274/r0011547.
Pełny tekst źródłaChoquette, Gary. PR-000-18COMP-R01 Gas Engine Emissions Compendium. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), styczeń 2019. http://dx.doi.org/10.55274/r0011546.
Pełny tekst źródłaChoquette, Gary. PR-000-21COMP-R04 Valve Spacing and Automation Compendium. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), wrzesień 2021. http://dx.doi.org/10.55274/r0012149.
Pełny tekst źródłaRipey, Mariya. NUMBERS IN THE NEWS TEXT (BASED ON MATERIAL OF ONE ISSUE OF NATIONWIDE NEWSPAPER “DAY”). Ivan Franko National University of Lviv, marzec 2021. http://dx.doi.org/10.30970/vjo.2021.50.11106.
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