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Ang, Oon Sim. "Modeling of double heterojunction bipolar transistors". Thesis, University of British Columbia, 1990. http://hdl.handle.net/2429/29458.
Pełny tekst źródłaApplied Science, Faculty of
Electrical and Computer Engineering, Department of
Graduate
BALARAMAN, PRADEEP ARUGUNAM. "DESIGN, SIMULATION AND MODELING OF InP/GaAsSb/InP DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS". University of Cincinnati / OhioLINK, 2003. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1069275786.
Pełny tekst źródłaFlitcroft, Richard M. "Wide bandgap collector III-V double heterojunction bipolar transistors". Thesis, University of Sheffield, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.341875.
Pełny tekst źródłaSchnyder, Iwan. "An indium-phosphide double-heterojunction bipolar transistor technology for 80 Gb/s integrated circuits /". Konstanz : Hartung-Gorre, 2005. http://www.loc.gov/catdir/toc/fy0610/2006356171.html.
Pełny tekst źródłaZhang, Yun. "Development of III-nitride bipolar devices: avalanche photodiodes, laser diodes, and double-heterojunction bipolar transistors". Diss., Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/42703.
Pełny tekst źródłaLee, Tae-Woo. "An experimental and theoretical study of InGaP-GaAs double heterojunction bipolar transistors". Thesis, University of Sheffield, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.324090.
Pełny tekst źródłaBalaraman, Pradeep A. "Design, simulation and modelling of InP/GaAsSb/InP double heterojunction bipolar transistors". Cincinnati, Ohio : University of Cincinnati, 2003. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=ucin1069275786.
Pełny tekst źródłaBauknecht, Raimond. "InP double heterojunction bipolar transistors for driver circuits in fiber optical communication systems /". [S.l.] : [s.n.], 1998. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=12455.
Pełny tekst źródłaMohiuddin, Muhammad. "InGaAs/InA1As Double Heterojunction Bipolar transistors for high-speed, low-power digital applications". Thesis, University of Manchester, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.511942.
Pełny tekst źródłaSchneider, Karl. "Broadband amplifiers for high data rates using InP, InGaAs double heterojunction bipolar transistors". Karlsruhe : Univ.-Verl. Karlsruhe, 2006. http://deposit.d-nb.de/cgi-bin/dokserv?idn=979772826.
Pełny tekst źródłaChen, Pin-Fan. "Investigation of GaInP/GaAs double heterojunction bipolar transistors for microwave power amplifier applications /". Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2001. http://wwwlib.umi.com/cr/ucsd/fullcit?p3001274.
Pełny tekst źródłaSotoodeh, Mohammed. "Design, characterisation, and numerical simulation of double heterojunction bipolar transistors for microwave power applications". Thesis, King's College London (University of London), 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.367945.
Pełny tekst źródłaHe, Jianqing. "Investigation of transport mechanisms for n-p-n InP/InGaAs/InP double heterojunction bipolar transistors". Thesis, Virginia Tech, 1989. http://hdl.handle.net/10919/44645.
Pełny tekst źródłaA more complete model for InP/InGaAs Double Heterojunction Bipolar
Transistors (DHBT) is obtained in this thesis by physically analyzing the transport
process of the main current components. The potential distribution of the energy
barrier constitutes a fundamental analytical concept and is employed for applying
the diffusion, the thermionic emission, and the tunneling theories in investigating the
injection mechanisms at the e-b heterojunction interface. The diffusion transport is
considered first for electron injection from the emitter into the base. The thermionic
emission is applied properly at the point of maximum potential energy as one
of the boundary conditions at that interface. A suitable energy level is selected with
respect to which the energy barrier expression is expanded for the calculation of the
tunneling probability. The first "spike" at the conduction band discontinuity is
described as the potential energy for the injected electrons to obtain kinetic energy
to move into the base region with a substantially high Velocity. The electron blocking
action of the second "spike" at the bâ c junction is also analyzed by considering the
transport Velocity with which electrons are swept out of that boundary. Based on the
material parameters recently reported for both InP and InGaAs, computations of the nI
current components are carried out to provide à characteristics in good agreement
with the reported experimental results.
Master of Science
Schneider, Karl [Verfasser]. "Broadband amplifiers for high data rates using InP, InGaAs double heterojunction bipolar transistors / von Karl Schneider". Karlsruhe : Univ.-Verl. Karlsruhe, 2006. http://d-nb.info/979772826/34.
Pełny tekst źródłaDavy, Nil. "Optimisation du transistor bipolaire à double hétérojonction sur substrat d’InP (TBDH InP) pour circuits intégrés ultra-rapides". Electronic Thesis or Diss., Bordeaux, 2024. http://www.theses.fr/2024BORD0043.
Pełny tekst źródłaIn the era of information technology, we are witnessing a continuous increase in the volume of exchanged data. This comes with a constant need to enhance the bandwidth of optical and radio-frequency communication systems. The ongoing demand for increased bandwidth requires the design of faster circuits capable of supporting the growing data traffic. These circuits, in turn, must rely on ever-faster electronic component technologies. It is in this context that double-heterojunction bipolar transistors (DHBTs) in InP/InGaAs are developed. Thanks to the properties of III-V semiconductors, these components can operate at very high frequencies (> 500 GHz) while maintaining a relatively high breakdown voltage (> 4V).This thesis focus on improving the performance of these components. We will begin by addressing the improvement of high-frequency measurements of transistors to evaluate their frequency performance. We will delve into various choices associated with measurements (calibration, de-embedding, RF probe models) and introduce new measurement pads. In the second part, we will develop an analytical model, taking into account the specifics of the design and technology of the component. Once calibrated on measurements, this model will be used to determine the main axes for improving performance. Next, we will study the performance of several epitaxial structures with the aim of reducing electron transit time while maximizing frequency performance. A new structure, optimized to maximize the transition frequency without degrading the maximum oscillation frequency, will be proposed. Subsequently, we will investigate the physical phenomena limiting the breakdown voltage of the transistor. Finally, we will focus on the self-heating phenomenon that degrades transistor performance. We will propose a thermal resistance model and associated improvement strategies
Knight, Robert John. "The development of a novel all ternary InAlAs/InGaAs double heterojunction bipolar transistor (DHBT) for the design, simulation and fabrication of a static divide-by-2 frequency divider". Thesis, University of Manchester, 2012. https://www.research.manchester.ac.uk/portal/en/theses/the-development-of-a-novel-all-ternary-inalasingaas-double-heterojunction-bipolar-transistor-dhbt-for-the-design-simulation-and-fabrication-of-a-static-divideby2-frequency-divider(5b2d74ab-ca13-4c1a-8b79-368687255172).html.
Pełny tekst źródłaTan, Eugene. "Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC), double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT)". Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape11/PQDD_0006/NQ42767.pdf.
Pełny tekst źródłaDupuy, Jean-Yves. "Théorie et Pratique de l'Amplificateur Distribué : Application aux Télécommunications Optiques à 100 Gbit/s". Thesis, Cergy-Pontoise, 2015. http://www.theses.fr/2015CERG0759/document.
Pełny tekst źródłaThe theory, design, optimisation and characterisation of distributed amplifiers in 0.7-µm InP DHBT technology, for 100-Gbit/s optical communication systems, are presented. We show how the appropriate implementation of the distributed amplifier concept in a bipolar transistors technology with high swing-speed product has enabled the realisation of an electro-optic modulator driver with 6.2- and 5.9-Vpp differential driving amplitude at 100 and 112 Gb/s, respectively, with a high signal quality. This circuit thus establishes the swing-speed product record at 660 Gb/s.V on wafer and at 575 Gb/s.V in a microwave module. In the frame of the European project POLYSYS, it has been co-packaged with a tunable laser and a modulator to realise a compact optoelectronic transmitter module, which has demonstrated performances advancing the state of the art of short reach 100-Gb/s optical communications
Chik, Hope Wuming. "Emitter-up heterojunction bipolar transistor-compatible laser". Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk2/tape17/PQDD_0014/MQ34129.pdf.
Pełny tekst źródłaHall, S. "An integrated Schottky-collector heterojunction bipolar transistor". Thesis, University of Liverpool, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.384387.
Pełny tekst źródłaMawby, P. A. "Characterisation and fabrication of heterojunction bipolar transistors". Thesis, University of Leeds, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.383334.
Pełny tekst źródłaYüksel, Ayça. "The AlInP material system in heterojunction bipolar transistor technology". Thesis, Massachusetts Institute of Technology, 1994. http://hdl.handle.net/1721.1/37728.
Pełny tekst źródłaSuvar, Erdal. "SiGeC Heterojunction Bipolar Transistors". Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2003. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3674.
Pełny tekst źródłaHeterojunction bipolar transistors (HBT) based on SiGeC havebeen investigated. Two high-frequency architectures have beendesigned, fabricated and characterized. Different collectordesigns were applied either by using selective epitaxial growthdoped with phosphorous or by non-selective epitaxial growthdoped with arsenic. Both designs have a non-selectivelydeposited SiGeC base doped with boron and a poly-crystallineemitter doped with phosphorous.
Selective epitaxial growth of the collector layer has beendeveloped by using a reduced pressure chemical vapor deposition(RPCVD) technique. The incorporation of phosphorous and defectformation during selective deposition of these layers has beenstudied. A major problem of phosphorous-doping during selectiveepitaxy is segregation. Different methods, e.g. chemical orthermal oxidation, are shown to efficiently remove thesegregated dopants. Chemical-mechanical polishing (CMP) hasalso been used as an alternative to solve this problem. The CMPstep was successfully integrated in the HBT process flow.
Epitaxial growth of Si1-x-yGexCy layers for base layerapplications in bipolar transistors has been investigated indetail. The optimization of the growth parameters has beenperformed in order to incorporate carbon substitutionally inthe SiGe matrix without increasing the defect density in theepitaxial layers.
The thermal stability of npn SiGe-based heterojunctionstructures has been investigated. The influence of thediffusion of dopants in SiGe or in adjacent layers on thethermal stability of the structure has also been discussed.
SiGeC-based transistors with both non-selectively depositedcollector and selectively grown collector have been fabricatedand electrically characterized. The fabricated transistorsexhibit electrostatic current gain values in the range of 1000-2000. The cut-off frequency and maximum oscillation frequencyvary from 40-80 GHz and 15-30 GHz, respectively, depending onthe lateral design. The leakage current was investigated usinga selectively deposited collector design and possible causesfor leakage has been discussed. Solutions for decreasing thejunction leakage are proposed.
Key words:Silicon-Germanium-Carbon (SiGeC),Heterojunction bipolar transistor (HBT), chemical vapordeposition (CVD), selective epitaxy, non-selective epitaxy,collector design, high-frequency measurement, dopantsegregation, thermal stability.
Pratapgarhwala, Mustansir M. "Characterization of Transistor Matching in Silicon-Germanium Heterojunction Bipolar Transistors". Thesis, Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/7536.
Pełny tekst źródłaLemna, Boyd. "GaInP/GaAs heterojunction bipolar transistor, empirical investigation at 29 GHz". Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1997. http://www.collectionscanada.ca/obj/s4/f2/dsk2/ftp04/mq22773.pdf.
Pełny tekst źródłaYee, Mun Chun Marcus. "High current and voltage effects in heterojunction bipolar transistor collectors". Thesis, University of Sheffield, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.269460.
Pełny tekst źródłaHelme, John Peter. "Analytical charge control modelling of the speed response of heterojunction bipolar phototransistor and PIN-diode/heterojunction bipolar transistor photoreceivers". Thesis, University of Sheffield, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.425610.
Pełny tekst źródłaPagette, Francois Carleton University Dissertation Engineering Electronics. "Implementation of a double-poly bipolar transistor technology". Ottawa, 1994.
Znajdź pełny tekst źródłaGuetre, Eric R. (Eric Rene) Carleton University Dissertation Engineering Electronics. "An Efficient Ka-band MMIC upconverter using a heterojunction bipolar transistor". Ottawa, 1997.
Znajdź pełny tekst źródłaLee, Yi-Che. "Development of III-nitride transistors: heterojunction bipolar transistors and field-effect transistors". Diss., Georgia Institute of Technology, 2014. http://hdl.handle.net/1853/53472.
Pełny tekst źródłaAmin, Farid Ahmed. "Design, characterisation and reliability of ohmic contacts for HBT applications". Thesis, King's College London (University of London), 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.251977.
Pełny tekst źródłaStein, Félix. "SPICE Modeling of TeraHertz Heterojunction bipolar transistors". Thesis, Bordeaux, 2014. http://www.theses.fr/2014BORD0281/document.
Pełny tekst źródłaThe aim of BiCMOS technology is to combine two different process technologies intoa single chip, reducing the number of external components and optimizing power consumptionfor RF, analog and digital parts in one single package. Given the respectivestrengths of HBT and CMOS devices, especially high speed applications benefit fromadvanced BiCMOS processes, that integrate two different technologies.For analog mixed-signal RF and microwave circuitry, the push towards lower powerand higher speed imposes requirements and presents challenges not faced by digitalcircuit designs. Accurate compact device models, predicting device behaviour undera variety of bias as well as ambient temperatures, are crucial for the development oflarge scale circuits and create advanced designs with first-pass success.As technology advances, these models have to cover an increasing number of physicaleffects and model equations have to be continuously re-evaluated and adapted. Likewiseprocess scaling has to be verified and reflected by scaling laws, which are closelyrelated to device physics.This thesis examines the suitability of the model formulation for applicability to production-ready SiGe HBT processes. A derivation of the most recent model formulationimplemented in HICUM version L2.3x, is followed by simulation studies, whichconfirm their agreement with electrical characteristics of high-speed devices. Thefundamental geometry scaling laws, as implemented in the custom-developed modellibrary, are described in detail with a strong link to the specific device architecture.In order to correctly determine the respective model parameters, newly developed andexisting extraction routines have been exercised with recent HBT technology generationsand benchmarked by means of numerical device simulation, where applicable.Especially the extraction of extrinsic elements such as series resistances and parasiticcapacitances were improved along with the substrate network.The extraction steps and methods required to obtain a fully scalable model library wereexercised and presented using measured data from a recent industry-leading 55nmSiGe BiCMOS process, reaching switching speeds in excess of 300GHz. Finally theextracted model card was verified for the respective technology
Ahmed, Adnan. "Study of Low-Temperature Effects in Silicon-Germanium Heterojunction Bipolar Transistor Technology". Thesis, Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/7227.
Pełny tekst źródłaRoberts, Victoria. "The growth and characterisation of silicon alloys for heterojunction bipolar transistor applications". Thesis, University of York, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.259846.
Pełny tekst źródłaIqbal, Ahmer. "Heterojunction bipolar transistor based distributed amplifiers for fibre optic receiver front-end applications". Thesis, University of Manchester, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.734182.
Pełny tekst źródłaOka, Tohru. "Novel GaAs Heterojunction Bipolar Transistor Technologies for High-Speed and Low-Power Applications". 京都大学 (Kyoto University), 2003. http://hdl.handle.net/2433/148898.
Pełny tekst źródłaLidsky, David. "Design, Fabrication and Characterization of a GaAs/InxGa1-xAs/GaAs Heterojunction Bipolar Transistor". Thesis, Virginia Tech, 2014. http://hdl.handle.net/10919/52591.
Pełny tekst źródłaMaster of Science
Laneve, Tony Carleton University Dissertation Engineering Electronics. "Empirical modeling of a GaAs/A1GaAs heterojunction bipolar transistor for microwave circuit applications". Ottawa, 1995.
Znajdź pełny tekst źródłaShah, Alam Huhmmad. "RF modelling of deep-submicron CMOS and heterojunction bipolar transistor for wireless communication systems". Thesis, Queen's University Belfast, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.269173.
Pełny tekst źródłaKonistis, Konstantinos 1973. "A heterojunction bipolar transistor with stepwise allog-graded base : analysis, design, fabrication, and characterization". Thesis, Massachusetts Institute of Technology, 2004. http://hdl.handle.net/1721.1/28712.
Pełny tekst źródłaIncludes bibliographical references (p. 117-126).
(cont.) features but the device self-heating turned out to be crucial for the longevity of the base micro-airbridges. The short lifetime of the base micro-airbridges was prohibitive for the realization of high frequency measurements. This work serves as the foundation for the implementation of robust HBT transit-time oscillators with the incorporation of slight modifications in the fabrication process.
This thesis explores the potential benefits of a GaAs-based heterojunction bipolar transistor (HBT) with stepwise alloy-graded base. The step height is slightly greater than the longitidinal optical (LO) phonon energy h[omega]LO in order to facilitate LO-phonon-enhanced forward diffusion of minority carriers in the base. The intuitive theoretical approach of carrier transport in the base, as proposed by other workers for this type of alloy-grading, did not incorporate in detail the various mechanisms of transport. In this work, we solved the Botzmann transport equation (BTE) in one dimension across the base for arbritrary frequencies. Impurity and LO phonon scattering were considered as the dominant scattering mechanisms. The intrinsic and extrinsic elements were combined and a small-signal equivalent circuit was proposed for the evaluation of the high-frequency performance of the device. The unique feature of this HBT is that the base transport factor undergoes a moderate magnitude attenuation and phase delay. By choosing a suitable collector delay, a band-limited negative output resistance can emerge in the microwave/millimeter-wave regime. The main benefit of the device is its inherent property as a transit-time high-frequency oscillator. Using our device simulator, we selected the material parameters for epitaxial growth (MBE) of the device wafer and we investigated various device layouts. We implemented the complete microfabrication of 2 [micro]m x 15 [micro]m, self-aligned, emitter-up HBTs with micro-airbridges for device isolation purposes. We performed DC measurements of various devices and they provided us with feedback for modifications in the MBE design and growth conditions of the device wafer. We finally fabricated HBTs with favorable DC
by Konstantinos Konistis.
Ph.D.
Lebby, M. S. "Fabrication and characterisation of the Heterojunction field effect transistor (HFET) and the bipolar inversion channel field effect transistor (BIFCET)". Thesis, University of Bradford, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.379863.
Pełny tekst źródłaRubio, Robert Dale. "The design, simulation and analysis of InP double heterojunction transistor for power amplifiers". Diss., Restricted to subscribing institutions, 2009. http://proquest.umi.com/pqdweb?did=1779690361&sid=2&Fmt=2&clientId=48051&RQT=309&VName=PQD.
Pełny tekst źródłaBellini, Marco. "Operation of silicon-germanium heterojunction bipolar transistors on". Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/28206.
Pełny tekst źródłaCommittee Chair: Cressler, John D.; Committee Member: Papapolymerou, John; Committee Member: Ralph, Stephen; Committee Member: Shen, Shyh-Chiang; Committee Member: Zhou, Hao Min.
Liu, Xiang. "Reliability study of InGaP/GaAs heterojunction bipolar transistor MMIC technology by characterization, modeling and simulation". Doctoral diss., University of Central Florida, 2011. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4967.
Pełny tekst źródłaID: 030423028; System requirements: World Wide Web browser and PDF reader.; Mode of access: World Wide Web.; Thesis (Ph.D.)--University of Central Florida, 2011.; Includes bibliographical references (p. 82-88).
Ph.D.
Doctorate
Electrical Engineering and Computer Science
Engineering and Computer Science
Xu, Ziyan Niu Guofu. "Low temperature modeling of I-V characteristics and RF small signal parameters of SiGe HBTs". Auburn, Ala., 2009. http://hdl.handle.net/10415/1925.
Pełny tekst źródłaVUMMIDI, MURALI KRISHNA PRASAD. "Thermionic Emission Diffusion Model of InP-based Pnp Heterojunction Bipolar Transistor with Non-Uniform Base Doping". University of Cincinnati / OhioLINK, 2003. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1060110500.
Pełny tekst źródłaMalm, B. Gunnar. "High Frequency Characterization and Modeling of SiGe Heterojunction Bipolar Transistors". Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2002. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3324.
Pełny tekst źródłaMiyake, Hiroki. "Interface Control of AlGaN/SiC Heterojunction and Development of High-Current-Gain SiC-Based Bipolar Transistors". 京都大学 (Kyoto University), 2012. http://hdl.handle.net/2433/157593.
Pełny tekst źródłaLee, Edwin Wendell II. "Growth and Nb-doping of MoS2 towards novel 2D/3D heterojunction bipolar transistors". The Ohio State University, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=osu1480686917234143.
Pełny tekst źródłaWang, Wei-Chou, i 王偉州. "Investigation of Double Delta-Doped Heterojunction Bipolar Transistor". Thesis, 1998. http://ndltd.ncl.edu.tw/handle/87232646929972326322.
Pełny tekst źródła國立成功大學
電機工程學系
86
The double heterojunction bipolar transistors (DHBT's) offer the promise for very high-speed and high-power integrated circuit applications. The predominantpurpose of this thesis is to investigate a lattice-matched In0.49Ga0.51As/GaAs/In0.49 Ga0.51As double delta-doped heterojunction bipolar transistor (D^3HBT) preparedby low-pressure metal organic chemical vapor deposition (LP-MOCVD). First, we realized the potential spikes and energy band diagrams of D^3HBT by solvingthe Poisson's equation, respectively. Moreover, the effects of delta-doped sheets at emitter-base (E-B) and base-collector (B-C) heterojunction will be discussed. Due tothe reduction of the potential spikes by inserting the delta-doped sheets and setback layers both at E-B and B-C heterojunctions, the electron blocking effect is removedand the dramatic improvement of current gain is obtained. Furthermore, a one-dimensional theoretical simulation is also employed to analyze the device performance. A ModifiedEbers-Moll model for both single and double heterojunction bipolar transistors with or without band spikes is developed. In addition, the carrier recombination within the quasi neutral base and space charge regions (SCRs) are taken into account duringthe simulation. We also clarify the discrepancy between theoretical and experimental results. We have successfully fabricated the double delta-doped heterojunction bipolar transistor(D^3HBT). The experimental results show that the common-emitter current gain over 210 atthe collector current of 35mA and an offset voltage smaller than 50mV are observed. Also, a lower knee-shaped voltage of 1.4V at the collector current of 40mA is observed due tothe significant elimination of the potential spike at B-C heterojunction. The base-collectorjunction breakdown voltage is about of 8V. Such excellent D.C. performances indeed improvethe drawbacks of conventional DHBT. From the simulation results, if the effective collectorarea is reduced to 100um^2, a good high-frequency performance of D^3HBT can be obtained.Consequently, the studied D^3HBT device provides a good promise for high-speed and high- power circuit applications.