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Artykuły w czasopismach na temat "Dommages induits par plasma"
Cassou, K., D. Ros, S. Kazamias, A. Klisnick, G. Jamelot, O. Guilbaud, B. Rus i in. "Étude des dommages induits dans l'ADN par irradiation laser X-UV à 21.2 nm". Journal de Physique IV (Proceedings) 127 (czerwiec 2005): 177–80. http://dx.doi.org/10.1051/jp4:2005127027.
Pełny tekst źródłaMilliat, Fabien, i Agnès François. "Les mastocytes, stakhanovistes de l’immunité". médecine/sciences 34, nr 2 (luty 2018): 145–54. http://dx.doi.org/10.1051/medsci/20183402012.
Pełny tekst źródłaKiris, Ilker, Ilker Tekin, Nigar Yilmaz, Recep Sutcu, Nermin Karahan i Ahmet Ocal. "L'Iloprost diminue l'expression des molécules d'adhérence et réduit des dommages rénaux induits par l'ischémie-reperfusion aortique abdominale". Annales de Chirurgie Vasculaire 23, nr 2 (marzec 2009): 229–41. http://dx.doi.org/10.1016/j.acvfr.2009.05.013.
Pełny tekst źródłaWenkourama, Daméga, Ayelou Bakowè, Ataigba I. N. Eli, Sonia Kanékatoua, Mayéna Kpinsaga, Agouda Bouwèssotcholo, Awesso Babizam, Kokou Messanh Agbemele Soedje i Kolou Simliwa Dassa. "Troubles de l’Usage d’Alcool (TUA) au CHU Kara : état des lieux". Psy Cause N° 88, nr 1 (28.03.2024): 29–45. http://dx.doi.org/10.3917/psca.088.0029.
Pełny tekst źródłaPérez-Anker, Javiera, Beatrice Alejo, Pablo Iglesias, Vincent Berot, C. Cano, Elisa Cinotti, Veronique Del Marmol i in. "Caractérisation des dommages cutanés photo-induits, à l’aide de la tomographie par cohérence optique à champ linéaire 3D et corrélation histopathologique". Annales de Dermatologie et de Vénéréologie - FMC 1, nr 8 (grudzień 2021): A293. http://dx.doi.org/10.1016/j.fander.2021.09.315.
Pełny tekst źródłaDjamai, D., H. Oudira i A. Saifi. "Application d’un modèle hybride à l’étude des dommages radio-induits par un faisceau d’électrons sur la molécule d’ADN dans son environnement". Radioprotection 43, nr 3 (lipiec 2008): 357–87. http://dx.doi.org/10.1051/radiopro:2008005.
Pełny tekst źródłaBoorstein, R., S. Zuo, J. Cadet i G. Teebor. "Dommages photo-induits des résidus monomériques de la 5-méthylcytosine de l’ADN par la lumière de l’ultraviolet lointain : rôle de l’oxygène". Journal de Chimie Physique 93 (1996): 16–28. http://dx.doi.org/10.1051/jcp/1996930016.
Pełny tekst źródłaAgbohessi, Prudencio, i Ibrahim Imorou Toko. "Effets toxiques des herbicides à base du glyphosate sur les poissons et autres animaux aquatiques : approche bibliographique". International Journal of Biological and Chemical Sciences 15, nr 6 (23.02.2022): 2685–700. http://dx.doi.org/10.4314/ijbcs.v15i6.33.
Pełny tekst źródłaImasuen, J. A., L. O. Obatta, F. O. Imhankon i A. O. Atanda. "Haematological and lipid profile of rabbits fed ginger (Zingiber officinale) and turmeric (Curcuma longa) additives to correct crude oil induced antioxidant challenges". Nigerian Journal of Animal Production 49, nr 2 (8.03.2022): 101–11. http://dx.doi.org/10.51791/njap.v49i2.3467.
Pełny tekst źródłaRozprawy doktorskie na temat "Dommages induits par plasma"
Bizouerne, Maxime. "Développement de procédés de gravure plasma sans dommages pour l'intégration de l'InGaAs comme canal tridimensionnel de transistor nMOS non-planaire". Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAT030/document.
Pełny tekst źródłaIncreasing the performance of transistors for the next decade still relies on transistor downscaling which is inevitably accompanied by an increasing complexity of the architectures and materials involved. At the beginning of this thesis, one strategy to pursue the downscaling was to replace, in a finFET architecture, the silicon channel with high-mobility semiconductor, such as In0,53Ga0,47As for the nMOS transistors. The patterning of the channel architecture by plasma etching is an essential step to overcome in the fabrication of InGaAs-based finFET transistors. Indeed, to ensure optimal performances of the device, it is crucial that the plasma etching process do not generate defects on the channel sidewalls such as a loss of stoichiometry and roughness formation. Thus, the major aim of this thesis is to pattern the 3D InGaAs channel by plasma etching with minimal sidewalls damage. For this, we investigated three plasma etching strategies. First, this work focused on the development of plasma etches process with halogen chemistries at ambient temperature (60°C). Such process leads to sloped and rough patterns due to the redeposit of low volatile InClx etch by products. Secondly, Cl2/CH4 plasma etching processes at high temperature (200°C) have been studied and developed. Anisotropic and relatively smooth patterns can be obtained using such plasma process thanks to enhanced volatility of InClx products and a SiOx sidewall passivation formation. Finally, an atomic layer etching concept has been investigated to pattern InGaAs with minimal damage. This concept consists in alternating two self-limited steps: first, an implantation step using He/O2 plasma modifies the InGaAs surface to a limited thickness. Then, the modified layer is removed by HF wet. For all these etching strategies, a methodology was implemented to perform a systematic characterization of the damage generated on the sidewalls. The Auger spectroscopy was used to determine the sidewall stoichiometry while the sidewall roughness is measured by AFM. The results from the sidewall characterizations revealed the necessity to implement a surface restoration process. It consists in oxidizing the InGaAs sidewalls with O2 plasma and to removed the oxidized layer with a HF step. This process was efficient to smooth the InGaAs pattern sidewalls but enhances an arsenic enrichment which was already present after the etching processes
Fesiienko, Oleh. "Procédés de gravure à faible endommagement des surfaces : application à la gravure SiN sur AlGaN/GaN pour les transistors à haute mobilité électronique". Electronic Thesis or Diss., Université Grenoble Alpes, 2023. http://www.theses.fr/2023GRALT094.
Pełny tekst źródłaGallium Nitride (GaN) semiconductors are promising materials for fabricating high electron mobility transistors (HEMTs) for the next generations of power devices due to their exceptional physical properties suitable for high voltage, temperature, and frequency applications. During the fabrication of HEMTs based on an AlGaN/GaN heterostructure, gate formation is identified as the most critical step, which could lead to the transistor's electrical degradation. This step aims to precisely remove the SiN cap layer protecting the heterostructure without damaging the underlying AlGaN barrier layer. The thesis's goal is to develop and optimize plasma etching processes for the SiN cap layer and post-etch wet processes to preserve the integrity of the AlGaN barrier layer.This study evaluated two approaches for SiN etching: 1) the traditional approach using fluorinated plasmas developed in an ICP reactor; 2) an alternative approach using a reactor equipped with capacitive plasma and post-discharge plasma (RPS), implementing the Smart Etch concept. The latter approach involves a two-step process for SiN etching: modification of the SiN layer by H2 ion implantation, followed by removal using either wet (BOE) or plasma (RPS) methods, with reactive neutral species (fluorinated) interacting with the substrate.Various material characterization techniques were combined (AR-XPS, AFM, TEM) to assess the etching process and post-etch treatments' impact on the AlGaN barrier layer's physicochemical properties, including stoichiometry, chemical composition, Fermi level position, roughness, and thickness changes. Identified surface physicochemical changes in AlGaN were then correlated with capacitance and voltage (C-V) measurements conducted on MOS-HEMT capacitors to evaluate the electrical parameters' impact, such as threshold voltage, hysteresis, and frequency dispersion.Studies revealed that regardless of the etching approach used, stopping the SiN etching in fluorinated plasma transforms the AlGaN layer's surface into a reactive AlGaNFx layer (with thickness between 0.8 and 2 nm). This thickness increases when plasmas with higher ion fluxes and energies are used. This transformation induces changes in the stoichiometry, chemical composition, Fermi level, and morphology of the AlGaN layer. Various post-etch wet treatments were evaluated to remove the modified layer. Studies show that using KOH-based wet treatments effectively removes the fluorinated layer while restoring the AlGaN layer's integrity regarding stoichiometry, roughness, and Fermi-level position. However, removing the modified layer results in a reduction in the AlGaN layer's thickness.In terms of electrical results, studies reveal that all etching processes involving high-energy ions (conventional or Smart Etch plasmas) cause irreversible damage to devices, leading to Fermi-level pinning. In contrast, using conventional low-energy ion processes (15 eV) does not significantly affect the devices' electrical characteristics. Applying the RPS process without H2 implantation alters the threshold voltage without affecting other electrical characteristics, offering a promising route for manufacturing "Normally OFF" HEMTs
Lahaie, Pierre-Olivier. "Nouvelle méthode expérimentale pour mesurer les dommages à l'ADN induits par la radiation". Mémoire, Université de Sherbrooke, 2015. http://hdl.handle.net/11143/7527.
Pełny tekst źródłaAbstract : DNA is the principle target of radiotherapy (RT) due to its crucial role in cellular growth and function. Ionizing radiation (IR) delivers its energy into the cell and its nucleus via sequential ionization events that produce many low-energy electrons (LEE)(10[superscript 5]e[superscript −] per MeV) which drive subsequent molecular dissociations and the formation of radicals and other reactive species. Since a better understanding of these mechanisms is needed to develop new strategies for radioprotection and RT, it is essential to identify and to quantify the initial damage induced by IR. Recent chromatographic (HPLC) analysis of short oligonucleotide irradiated with LEE in vacuo (Li et al., 2010) revealed that only ∼30 % of the loss of intact molecules could be explained by the formation of identifiable radiation products. We hypothesize that electron stimulated desorption (ESD) may account for some of the unexplained loss of the missing molecules. Here we propose a new experimental method to quantify this loss using a quartz crystal microbalance to measure in situ the total mass change due to ESD. This thesis describes the design and the construction of the novel apparatus and presents results for LEE irradiated thymine (thy) and thymidine (dT). We find that at 25 ◦ C, the thermal-induced mass loss is important for small molecules such as thy (126 amu). Upon irradiation at 50 eV, the rate of mass loss initially increases, but then decreased by factors between 5 and 15 indicating structural changes occurring at the sample surface. For larger molecules such as dT (242 amu), there is no thermal evaporation at 25 ◦ C and the LEE induced rate of desorption at 50 eV is 0.4 ± 0.1 amu/e[superscript -]. This work is needed to calibrate HPLC and mass spectrometry experiments allowing us to quantify the fragment species produced by LEE that are expected to induce further and biologically significant damage.
Bezine, Elisabeth. "Analyse des dommages à l'ADN induits par la toxine CDT et de leur réparation". Thesis, Toulouse, INPT, 2015. http://www.theses.fr/2015INPT0142/document.
Pełny tekst źródłaThe Cytolethal Distending Toxin (CDT) is a virulence factor produced by many pathogenic gram-negative bacteria, its production being associated to various diseases, including tumorigenesis. A causal relationship has been established between DNA damage, mutagenesis and cancerogenesis. Different studies classified CDT among the bacterial genotoxins. The CDT-related pathogenicity relies on the catalytic subunit CdtB action, shown to induce double-strand breaks (DSB) on the host genomic DNA. Previously, our team showed that, at doses 1000 times lower than those used in the literature, CDT probably induces single-strand breaks that degenerate into DSB during S-phase. To document this model, we studied the repair systems involved in host-cell in response to CDT-induced DNA damage. Since various repair pathways allow cells to respond different type of DNA damage, we speculated that non-DSB repair mechanisms might contribute to the cellular resistance to CDT-mediated genotoxicity. First, we confirm that HR is involved in the management of CDT-induced lesions, but also Non Homologous End Joining, the second major DSB repair mechanism. Next we show that nucleotide excision repair, involved in adducts repair, is not important to take care of CDT-induced DNA damage, whereas base excision repair impairment sensitizes CDT-treated cells, suggesting that CDT induce single-strand breaks. Moreover, we demonstrate for the first time the involvement and the activation of the Fanconi Anemia repair pathway in response to CDT. Finally, to better characterize CDT-induced damage, we initiate experiments to study CdtB nuclease activity in vitro. For this, different CdtB mutants have been generated, purified and their nuclease activity tested. A similar nuclease activity has been obtained for the wt or mutant CdtB in an in vitro assay (digestion of a supercoiled plasmid). However, a cell assay (nuclear expression of CdtB in eukaryotic cells) confirms the loss of activity for the mutant subunit. Our results thus indicate the importance to test the CdtB subunit in different context. To conclude, our work reinforces a model where CDT induces single-strand damage and not direct DSB. This also underlines the importance of cell proliferation to generate DSB and sheds light on the activated host-cell systems, after CDT-induced DNA damage
Dumont, Ariane. "Protection des ions organiques contre les dommages induits à l'ADN par les électrons de basse énergie". Mémoire, Université de Sherbrooke, 2009. http://savoirs.usherbrooke.ca/handle/11143/4025.
Pełny tekst źródłaLoquet, Jean-Gabriel. "Étude numérique et expérimentale des dommages permanents induits par une particule lourde dans les composants électroniques". École nationale supérieure de l'aéronautique et de l'espace (Toulouse ; 1972-2007), 2001. http://www.theses.fr/2001ESAE0015.
Pełny tekst źródłaMamouni, Kenza. "Rôle de la GTPase RhoB dans la réponse aux dommages à l'ADN induits par la camptothécine". Toulouse 3, 2013. http://thesesups.ups-tlse.fr/2031/.
Pełny tekst źródłaRhoB is a GTPase implicated in various intracellular functions such as cytoskeletal organization. Besides its well-established roles, RhoB recently emerged as an early DNA damage-inducible gene. RhoB is overexpressed and activated in response to various genotoxics although the mechanism of induction and functional relevance remain unclear. RhoB also possesses tumor suppressor properties. Its expression decreases during tumor progression and loss of RhoB promotes cell proliferation and invasion. To study the role of RhoB in the DNA damage response and its potential implication in tumor progression, we used camptothecin (CPT), a selective inhibitor of topoisomerase I that produces DNA double-strand breaks (DSBs). We show that, in CPT-treated cells, DSBs induce RhoB expression by a mechanism that depends on Chk2 and its substrate HuR that binds to and protects RhoB mRNA against degradation. RhoB deficient cells fail to dephosphorylate gamma-H2AX following CPT removal suggesting defective DSB repair. These cells also show decreased activity of PP2A, a phosphatase for gamma-H2AX and other DNA damage signaling and repair proteins. We propose that DSBs activate a Chk2-HuR-RhoB pathway that promotes PP2A-mediated dephosphorylation of gamma-H2AX. Finally, we show that RhoB deficient cells accumulate endogenous gamma-H2AX and chromosomal abnormalities, suggesting that RhoB loss increases DSB-mediated genomic instability and tumor progression
Le, roux Frédéric. "Développement de procédés de gravure plasma sans dommage pour l'électronique de puissance à base de GaN". Thesis, Université Grenoble Alpes, 2020. http://www.theses.fr/2020GRALT017.
Pełny tekst źródłaIn power electronics, GaN has become a material of choice: it meets the challenges of high energy performance, while promoting compactness and lightness of the components. When manufacturing power devices based on an AlGaN / GaN heterostructure, plasma etching induces degradations in the material and reduces the electronic properties of the components, in particular diodes and HEMT (High Electron Mobility Transistors). These thesis works focused on the study of these degradations and proposes industrializable etching processes which reduce these plasma impacts. We first focused on the degradation mechanisms involved during the etching of SiN with stop on AlGaN, according to different plasma parameters. The electrical and physicochemical characterizations (in particular the XPS) made it possible to highlight various degradation mechanisms and to propose a synthetic model. We have identified two main factors of electrical degradation: the first one is the energy ion bombardment which modifies the surface stoichiometries, favors the implantation of contaminants, disturbs the crystal quality of the lattice and causes the sputtering of AlGaN. An energy threshold, below which degradations remain limited, has however been demonstrated and tested. The second factor identified is the modified thickness. The greater the modified thickness, the more it has an influence on the electronic channel and its properties. This thickness can be increased by high bombardment energy or by the use of light elements which are deeply implanted in AlGaN. These results then served as a framework for the development of innovative processes in order to limit the damage during GaN etching. We studied three cyclic processes of the ALE type: O2-BCl3, Cl2-Ar and Cl2-He. These studies made it possible to highlight their different self-limiting and selectivity characteristics as well as to propose etching mechanisms models. Characterization and comparison with standard processes have highlighted their performance and in particular their ability to reduce the electrical degradation induced during etching
Belkacem, Amrane Abdelkrim. "Défauts induits dans le silicium par la gravure en plasma de SF6". Grenoble 1, 1991. http://www.theses.fr/1991GRE10003.
Pełny tekst źródłaHennebelle, Marie. "Acides gras polyinsaturés n-3 (AGPI n-3) e prévention des dommages cérébraux induits par un stress chronique". Phd thesis, Université Paris Sud - Paris XI, 2012. http://tel.archives-ouvertes.fr/tel-00691980.
Pełny tekst źródłaCzęści książek na temat "Dommages induits par plasma"
TAŞKIN, Gülşen, Esra ERTEN i Enes Oğuzhan ALATAŞ. "Revue de l’évaluation multitemporelle des dommages dus aux séismes à l’aide d’images satellitaires". W Détection de changements et analyse des séries temporelles d’images 2, 175–246. ISTE Group, 2024. http://dx.doi.org/10.51926/iste.9057.ch5.
Pełny tekst źródłaGENTILS, Aurélie, Stéphanie JUBLOT-LECLERC i Patrick SIMON. "Caractérisation des dommages d’irradiation". W Les matériaux du nucléaire sous irradiation, 273–96. ISTE Group, 2024. http://dx.doi.org/10.51926/iste.9148.ch10.
Pełny tekst źródłaPASCUCCI-CAHEN, Ludivine. "Les coûts économiques d’un accident nucléaire". W Économie de l’énergie nucléaire 2, 135–73. ISTE Group, 2022. http://dx.doi.org/10.51926/iste.9095.ch4.
Pełny tekst źródła"Pertes et dommages induits par le changement climatique : un moment critique pour agir". W Gérer les risques climatiques et faire face aux pertes et aux dommages. OECD, 2022. http://dx.doi.org/10.1787/5acc2318-fr.
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