Gotowe bibliografie tematyczne / Disorder, Doping

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Gotowa bibliografia na temat „Disorder, Doping”

Autor: Grafiati

Data publikacji: 6 września 2023

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Artykuły w czasopismach na temat "Disorder, Doping"

Santos, Ricardo D. S., i Marcos V. dos S. Rezende. "Doping disorder and the reduction–doping process in LiSrPO4". Phys. Chem. Chem. Phys. 19, nr 40 (2017): 27731–38. http://dx.doi.org/10.1039/c7cp04566b.

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A systematic theoretical study was performed on trivalent and divalent rare-earth (RE) dopant ions in the LiSrPO₄ structure, using atomistic simulations based on lattice energy minimization.

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Jones, Carwyn. "Doping as addiction: disorder and moral responsibility". Journal of the Philosophy of Sport 42, nr 2 (6.01.2015): 251–67. http://dx.doi.org/10.1080/00948705.2014.997743.

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Kabbaj, M., J. P. Albert i C. Jouanin. "Effects of Doping Induced Disorder in Polyacetylene". Molecular Crystals and Liquid Crystals 117, nr 1 (luty 1985): 205–8. http://dx.doi.org/10.1080/00268948508074625.

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Fediai, Artem, Anne Emering, Franz Symalla i Wolfgang Wenzel. "Disorder-driven doping activation in organic semiconductors". Physical Chemistry Chemical Physics 22, nr 18 (2020): 10256–64. http://dx.doi.org/10.1039/d0cp01333a.

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Turkel, Simon, Joshua Swann, Ziyan Zhu, Maine Christos, K. Watanabe, T. Taniguchi, Subir Sachdev i in. "Orderly disorder in magic-angle twisted trilayer graphene". Science 376, nr 6589 (8.04.2022): 193–99. http://dx.doi.org/10.1126/science.abk1895.

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Magic-angle twisted trilayer graphene (TTG) has recently emerged as a platform to engineer strongly correlated flat bands. We reveal the normal-state structural and electronic properties of TTG using low-temperature scanning tunneling microscopy at twist angles for which superconductivity has been observed. Real trilayer samples undergo a strong reconstruction of the moiré lattice, which locks layers into near–magic-angle, mirror symmetric domains comparable in size with the superconducting coherence length. This relaxation introduces an array of localized twist-angle faults, termed twistons and moiré solitons, whose electronic structure deviates strongly from the background regions, leading to a doping-dependent, spatially granular electronic landscape. The Fermi-level density of states is maximally uniform at dopings for which superconductivity has been observed in transport measurements.

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Zhang, Kai, Ren-Shu Wang i Xiao-Jia Chen. "Order–disorder transition in p-oligophenyls". Physical Chemistry Chemical Physics 21, nr 25 (2019): 13590–99. http://dx.doi.org/10.1039/c9cp01924c.

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Queisser, Hans J. "Order and Disorder in Semiconductors". MRS Bulletin 20, nr 12 (grudzień 1995): 43–49. http://dx.doi.org/10.1557/s0883769400045899.

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The pervasive impetus of modern semiconductor technology has become an accepted fact. Scientific mastering of materials and processes has increased tremendously within a short time frame. Technological control has been derived from this scientific base. An industry with more than $100 billion worth of silicon devices per annum in 1994 as well as incredibly high growth rates of production and applications is an economic reality in addition to being a matter of international industrial policy. The materials aspect of using perfected single crystals and applying local doping control provides the basis of this unusual success. Earlier usage of materials differed remarkably. Bronze and steel are used for their specific bulk properties. Shaping and connecting pieces is at the heart of iron-age or bronze-age technologies. Integration inside a regular spatial array of a host crystal is the semiconductor principle. The “Royal Road” to modern microelectronics consists of initially procuring a perfected single-crystal host, then locally establishing electrical and optical properties inside the host by specific replacements of host atoms by foreign “dopants.” The somewhat disparaging expression of defect as a generic term for all deviations from the host perfection does not really convey the power of this “doping doctrine” for semiconducting materials. The early pioneers of germanium and silicon however, placed great emphasis on the experimental verification that n-type and p-type doping by elements of the adjacent columns in the periodic table were accompanied by changes in the lattice parameter with atomic substitution of the host atoms as the guiding principle.

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Harigaya, Kikuo, Yasushi Wada i Klaus Fesser. "Doping disorder and level structures in conjugated polymers". Synthetic Metals 43, nr 1-2 (czerwiec 1991): 3579–82. http://dx.doi.org/10.1016/0379-6779(91)91356-f.

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Tanaka, Hisaaki, Kaito Kanahashi, Naoya Takekoshi, Hiroaki Mada, Hiroshi Ito, Yukihiro Shimoi, Hiromichi Ohta i Taishi Takenobu. "Thermoelectric properties of a semicrystalline polymer doped beyond the insulator-to-metal transition by electrolyte gating". Science Advances 6, nr 7 (luty 2020): eaay8065. http://dx.doi.org/10.1126/sciadv.aay8065.

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Conducting polymer thin films containing inherent structural disorder exhibit complicated electronic, transport, and thermoelectric properties. The unconventional power-law relation between the Seebeck coefficient (S) and the electrical conductivity (σ) is one of the typical consequences of this disorder, where no maximum of the thermoelectric power factor (P = S2σ) has been observed upon doping, unlike conventional systems. Here, it is demonstrated that a thiophene-based semicrystalline polymer exhibits a clear maximum of P through wide-range carrier doping by the electrolyte gating technique. The maximum value appears around the macroscopic insulator-to-metal transition upon doping, which is firmly confirmed by the temperature dependence of σ and magnetoresistance measurements. The effect of disorder on charge transport is suppressed in the metallic state, resulting in the conventional S-σ relation described by the Mott equation. The present results provide a physical background for controlling the performance of conducting polymers toward the application to thermoelectric devices.

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Marinov, Georgi, Biliana Georgieva, Marina Vasileva i Tsvetanka Babeva. "Study of Structure, Morphology and Optical Properties of Cobalt-Doped and Co/Al-co-Doped ZnO Thin Films Deposited by Electrospray Method". Applied Sciences 13, nr 17 (25.08.2023): 9611. http://dx.doi.org/10.3390/app13179611.

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A versatile electrospray method was utilized for deposition of thin ZnO films doped with Co (5%) (CZO) or co-doped with Co (2.5%) and Al (2.5%) (CAZO). Thin polycrystalline films with approximate thickness of 200 nm and high transmittance (more than 80%) were obtained. No additional XRD peaks due to dopant impurities or dopant oxides were observed. The cobalt doping led to decrease in grain size and increase in crystallite size from 22 nm to 29 nm in the (101) direction. Smaller changes were observed for the CAZO films. Surface roughness of the films was measured using a 3D optical profiler. Surface roughness of the doped films was from 5 nm to 9 nm higher than that of the pure films. Refractive index, extinction coefficient and thickness of the films were calculated using ellipsometric measurements and were further used for determination of optical band gap and Urbach energy. Refractive index and optical band gap increased with doping from 1.86 and 3.29 eV for pure ZnO to 2.00 and 3.35 eV for CZO and 1.97 and 3.33 eV for CAZO films. Through calculation of Urbach energy (119 meV for pure ZnO, 236 meV for CZO and 138 meV for CAZO), it was demonstrated that doping leads to an increase in structural disorder, most pronounced in the case of Co doping.

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Rozprawy doktorskie na temat "Disorder, Doping"

Higgins, Joshua Scott. "Disorder and doping in the oxygenated electron-doped superconductor Pr₂₋[x]Ce[x]CuO₄±[4-delta]". College Park, Md. : University of Maryland, 2006. http://hdl.handle.net/1903/4064.

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Thesis (Ph. D.) -- University of Maryland, College Park, 2006
Thesis research directed by: Physics. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.

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CONFALONIERI, GIORGIA. "LOCAL DISORDER IN THE STRUCTURE OF BA(TI,CE)O3 PEROVSKITE BY MEANS OF POWDER DIFFRACTION AND TOTAL SCATTERING. EFFECT OF TEMPERATURE, DOPING CONCENTRATION AND GRAIN SIZE". Doctoral thesis, Università degli Studi di Milano, 2017. http://hdl.handle.net/2434/478906.

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Nowadays BaTiO3 is considered as one of the most relevant environmental-friend ferroelectric and, thank to the chemical substitutions at the Ba2+ and/or Ti4+ sites, its properties are usually tailor to meet a big variety of devices and performance requirements. A classical example is the solid solution BaTi1-xMIVxO3, where M could be Sn, Zr, Hf, Ce etc., whose ferroelectric behavior shows an almost continuous variation with composition. The study of these compounds is then essential to improve their characteristics and make their suitable in more applications. Considering that their properties are deeply linked to the structure and especially to structural defects, average and local structural analyses are essential to better understand the origins of different polar behaviours and to have a real control on these materials. Despite this need, only BaTi1-xZrxO3 (BTZ) system, which is one of the most popular dielectrics used in multilayer ceramic capacitors, has been investigated in some detail. Although the similarity to BTZ suggests that BaTi1-xCexO3 (BTC) may be promising as lead free actuator materials, studies on this solid solution are almost limited. Thus in this research the BTC solid solution has been structurally investigated in order to provide knowledge lacks. Different ceramic samples with different doping amounts and different polar behaviours (from normal ferroelecric to relaxor via diffuse phase transition) have been investigated at different temperatures. In addition, taking into account the current tendency in miniaturized devices required in microelectronics, also chemical equivalent nano powders have been considered to explore not only doping effects, but also that of size. Pair Distribution Function (PDF) with different type of approaches (as carbox, biphasic and so on) has been employed coupled with TEM analysis and Raman spectroscopy. A complete description of that BaTi1-xCexO3 materials is given underlining links between polar behaviours, temperature, doping and size effects.

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Oliveira, Erlania Lima de. "Propriedades ?pticas de nanocristais de SiGe: efeitos de dopagem e desordem". Universidade Federal do Rio Grande do Norte, 2008. http://repositorio.ufrn.br:8080/jspui/handle/123456789/16555.

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Made available in DSpace on 2014-12-17T15:14:50Z (GMT). No. of bitstreams: 1 ErlaniaLO.pdf: 3072440 bytes, checksum: c231266f91625a857dc874cab6600510 (MD5) Previous issue date: 2008-12-29
Conselho Nacional de Desenvolvimento Cient?fico e Tecnol?gico
We have used ab initio calculations to investigate the electronic structure of SiGe based nanocrystals (NC s). This work is divided in three parts. In the first one, we focus the excitonic properties of Si(core)/Ge(shell) and Ge(core)/Si(shell) nanocrystals. We also estimate the changes induced by the effect of strain the electronic structure. We show that Ge/Si (Si/Ge) NC s exhibits type II confinement in the conduction (valence) band. The estimated potential barriers for electrons and holes are 0.16 eV (0.34 eV) and 0.64 eV (0.62 eV) for Si/Ge (Ge/Si) NC s. In contradiction to the expected long recombination lifetimes in type II systems, we found that the recombination lifetime of Ge/Si NC s (τR = 13.39μs) is more than one order of magnitude faster than in Si/Ge NC s (τR = 191.84μs). In the second part, we investigate alloyed Si1−xGex NC s in which Ge atoms are randomly positioned. We show that the optical gaps and electron-hole binding energies decrease linearly with x, while the exciton exchange energy increases with x due to the increase of the spatial extent of the electron and hole wave functions. This also increases the electron-hole wave functions overlap, leading to recombination lifetimes that are very sensitive to the Ge content. Finally, we investigate the radiative transitions in Pand B-doped Si nanocrystals. Our NC sizes range between 1.4 and 1.8 nm of diameters. Using a three-levels model, we show that the radiative lifetimes and oscillator strengths of the transitions between the conduction and the impurity bands, as well as the transitions between the impurity and the valence bands are strongly affected by the impurity position. On the other hand, the direct conduction-to-valence band decay is practically unchanged due to the presence of the impurity
Neste trabalho, utilizamos c?lculos ab-initios para investigar a estrutura eletr?nica de nanocristais (NC s) baseado em SiGe. Para tal, dividimos o mesmo em tr?s partes. Na primeira parte, investigamos as propriedades excit?nicas dos NC s de SiGe ordenados em estruturas do tipo core-shell ( Si[core]/Ge[shell ] e Ge[core]/Si[shell ]). Tamb?m estimamos as modifica??es induzidas pelo efeito do strain na estrutura eletr?nica. Com isso, mostramos que NC s Ge/Si (Si/Ge) exibe confinamento tipo II na banda de condu??o (val?ncia). A barreira de potencial estimada para os el?trons e os buracos s?o 0,16 eV (0,34 eV) e 0,64 eV (0,62 eV) para NC s de Si/Ge (Ge/Si). Em contradi??o com o esperado longo tempo de vida da recombina??o em sistemas do tipo II, verificamos que o tempo de vida da recombina??o nos NC s Ge/Si (τR = 13.39μs) ? mais de uma ordem de grandeza mais r?pido do que nos NC s de Si/Ge (τR = 191.84μs). Na segunda parte, investigamos NC s de Si1−xGex em que ?tomos de Ge s?o aleatoriamente posicionados. Desta forma, verificamos que o gap ?ptico e a energia de liga??o do par el?tron-buraco diminue linearmente com x, enquanto a energia de troca do exciton aumenta com x, devido o aumento da extens?o espacial da fun??o de onda dos el?trons e dos buracos. Isso tamb?m aumenta a superposi??o da fun??o de onda el?tron-buraco, fazendo com que o tempo de vida da recombina??o seja muito sens?vel ? fra??o molar x Ge. Finalmente, investigamos as transi??es radiativas nos NC?s de Si dopados com e Boro (B) e F?sforo (P). O tamanho dos nossos NC s variam entre 1.4 nm e 1.8 nm. Usando um modelo de tr?s n?veis, mostramos que o tempo de vida radiativo e a for?ca de oscilador entre a transi??o da banda de condu??o e o n?vel da impureza, como tamb?m a transi??o entre o n?vel da impureza e a banda de val?ncia s?o afetados pela posi??o da impureza no nanocristal de Si. Por outro lado, o decaimento direto da banda de condu??o para a de val?ncia n?o muda com presen?a da impureza

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Meakin, Sebastian, i Dennis Carlsson. "När gymkultur blir problematisk : En kvalitativ studie om ohälsosamt träningsbeteende". Thesis, Linnéuniversitetet, Institutionen för socialt arbete (SA), 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:lnu:diva-31672.

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Gyms are populated by more and more people and there is an increased interest in wellness and health. However, there is a downside to the culture that people choose to step into. Exercise can go too far and take unhealthy directions. The purpose of this study is to examine how norms are created in the gym culture and how unhealthy behaviour is reproduced inside the walls of the gym. We have also done research about how a local gym identifies and handles deviant behaviour such as the use of doping and eating disorders. Methods used are qualitative interviews and participating observations. Our theoretical framework has consisted of social constructivist theories of Peter Berger and Howard S. Becker such as the socially constructed reality and deviant careers. Our results have shown that it’s difficult to draw a line between what is healthy and unhealthy. The gym atmosphere and it`s message, the gym visitors and how they relate to values, interact and confirm each other mutually. This creates the gym norm. The gym handles deviant behaviour by conversations with its visitors and by having close ties to medical care. Knowledge is the key to a healthy approach towards training and also to the identification of deviant behaviour.

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Ruess, Frank Joachim Physics Faculty of Science UNSW. "Atomically controlled device fabrication using STM". Awarded by:University of New South Wales. Physics, 2006. http://handle.unsw.edu.au/1959.4/24855.

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We present the development of a novel, UHV-compatible device fabrication strategy for the realisation of nano- and atomic-scale devices in silicon by harnessing the atomic-resolution capability of a scanning tunnelling microscope (STM). We develop etched registration markers in the silicon substrate in combination with a custom-designed STM/ molecular beam epitaxy system (MBE) to solve one of the key problems in STM device fabrication ??? connecting devices, fabricated in UHV, to the outside world. Using hydrogen-based STM lithography in combination with phosphine, as a dopant source, and silicon MBE, we then go on to fabricate several planar Si:P devices on one chip, including control devices that demonstrate the efficiency of each stage of the fabrication process. We demonstrate that we can perform four terminal magnetoconductance measurements at cryogenic temperatures after ex-situ alignment of metal contacts to the buried device. Using this process, we demonstrate the lateral confinement of P dopants in a delta-doped plane to a line of width 90nm; and observe the cross-over from 2D to 1D magnetotransport. These measurements enable us to extract the wire width which is in excellent agreement with STM images of the patterned wire. We then create STM-patterned Si:P wires with widths from 90nm to 8nm that show ohmic conduction and low resistivities of 1 to 20 micro Ohm-cm respectively ??? some of the highest conductivity wires reported in silicon. We study the dominant scattering mechanisms in the wires and find that temperature-dependent magnetoconductance can be described by a combination of both 1D weak localisation and 1D electron-electron interaction theories with a potential crossover to strong localisation at lower temperatures. We present results from STM-patterned tunnel junctions with gap sizes of 50nm and 17nm exhibiting clean, non-linear characteristics. We also present preliminary conductance results from a 70nm long and 90nm wide dot between source-drain leads which show evidence of Coulomb blockade behaviour. The thesis demonstrates the viability of using STM lithography to make devices in silicon down to atomic-scale dimensions. In particular, we show the enormous potential of this technology to directly correlate images of the doped regions with ex-situ electrical device characteristics.

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Atmani, Hassane. "Investigations dans le domaine des comportements thermiques de matériaux désordonnés : application au sélénium et aux mélanges Se-Bi à faible concentration en bismuth". Rouen, 1988. http://www.theses.fr/1988ROUES009.

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Książki na temat "Disorder, Doping"

1919-, Finlayson D. M., red. Localisation and interaction in disordered metals and doped semiconductors: Proceedings of the Thirty-First Scottish Universities' Summer School in Physics, St. Andrews, August 1986 : a NATO Advanced Study Institute. Edinburgh: The School, 1986.

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Califano, Joseph A. Winning at any cost: Doping in Olympic sports. Wyd. 2. New York, NY: CASA Commission (National Center on Addiction and Substance Abuse), 2000.

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1944-, Mottram D. R., red. Drugs in sport. Wyd. 4. London: Routledge, 2005.

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1971-, Dimeo Paul, red. Drugs, alcohol and sport. London: Routledge, 2006.

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Drugs in sport. Wyd. 5. Abingdon, Oxon: Routledge, 2011.

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Richard, Peters, red. Patterns and correlates of anabolic-androgenic steroid use. [Sydney]: National Drug and Alcohol Research Centre, University of New South Wales, 1997.

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United States. Dept. of Health and Human Services. Office of Inspector General. Office of Evaluation and Inspections., red. Adolescents and steroids: A user perspective. Washington: U.S. Dept. of Health and Human Services, Office of Inspector General, Office of Evaluation and Inspections, 1990.

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Mottram, D. Drugs in Sport. London: Taylor & Francis Group Plc, 2004.

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Mottram, D. Drugs in Sport. London: Taylor & Francis Inc, 2004.

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General, United States Dept of Health and Human Services Office of Inspector. Adolescent steroid use. [Washington, D.C.?]: Dept. of Health and Human Services, Office of Inspector General, 1991.

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Części książek na temat "Disorder, Doping"

Wada, Y. "Doping and Disorder in Conducting Polymers". W New Horizons in Low-Dimensional Electron Systems, 415–32. Dordrecht: Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-3190-2_27.

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Elpelt, R., O. Wolst, H. Willenberg, S. Malzer i G. H. Döhler. "Disorder-enhanced tunneling transport through doping barriers". W Springer Proceedings in Physics, 849–50. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_403.

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Ley, L., i M. Hundhausen. "Carrier Recombination Kinetics in Amorphous Doping Superlattices". W Disordered Semiconductors, 551–61. Boston, MA: Springer US, 1987. http://dx.doi.org/10.1007/978-1-4613-1841-5_59.

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Cohen, J. David, Carol E. Michelson i James P. Harbison. "Junction Capacitance Studies of Hydrogenated Amorphous Silicon Doping Superiattice Films". W Disordered Semiconductors, 577–85. Boston, MA: Springer US, 1987. http://dx.doi.org/10.1007/978-1-4613-1841-5_61.

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Elliott, S. R. "A Model for the Electrical Doping of Chalcogenide Glasses by Bismuth". W Disordered Semiconductors, 219–36. Boston, MA: Springer US, 1987. http://dx.doi.org/10.1007/978-1-4613-1841-5_25.

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Kakalios, J., i R. A. Street. "The Thermal Equilibration Model for Persistent Photoconductivity in Doping Modulated Amorphous Silicon". W Disordered Semiconductors, 529–39. Boston, MA: Springer US, 1987. http://dx.doi.org/10.1007/978-1-4613-1841-5_57.

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Abkowitz, Martin A. "Changes in the Photoelectronic Properties of Glassy Chalcogenides Induced by Chemical Doping, Irradiation, and Thermal History". W Disordered Semiconductors, 205–17. Boston, MA: Springer US, 1987. http://dx.doi.org/10.1007/978-1-4613-1841-5_24.

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Thean, V. Y., S. Nagaraja i J. P. Leburton. "Three-Dimensional Self-Consistent Simulation of Interface and Dopant Disorders in Delta-Doped Grid-Gate Quantum Dot Devices". W Physical Models for Quantum Dots, 53–77. New York: Jenny Stanford Publishing, 2021. http://dx.doi.org/10.1201/9781003148494-4.

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HARIGAYA, Kikuo, Yasushi WADA i Klaus FESSER. "DOPING DISORDER AND BAND STRUCTURES IN CONJUGATED POLYMERS". W Strongly Coupled Plasma Physics, 255–58. Elsevier, 1990. http://dx.doi.org/10.1016/b978-1-4832-2908-9.50035-4.

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Dove, James, i Luke Rowe. "Cycling: Attention Deficit Hyperactivity Disorder and Anti-Doping". W Case Studies in Sports Psychiatry, 54–67. Cambridge University Press, 2020. http://dx.doi.org/10.1017/9781108767187.007.

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Streszczenia konferencji na temat "Disorder, Doping"

Bussmann, Ezra, Jeffrey Ivie, Justin Koepke, Quinn Campbell, Mitchell Brickson, Peter Schultz, Richard Muller, Andrew Baczewski, Andrew Mounce i Shashank Misra. "Stochastic atomistic disorder in atomic-precision doping." W Proposed for presentation at the American Physical Society March Meeting held March 15-19, 2021 in Nashville , TN. US DOE, 2020. http://dx.doi.org/10.2172/1831038.

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Koepke, Justin, Jeffrey Ivie, Quinn Campbell, Mitchell Brickson, Peter Schultz, Richard Muller, Andrew Baczewski, Andrew Mounce, Ezra Bussmann i Shashank Misra. "Stochastic atomistic disorder in atomic-precision doping." W Proposed for presentation at the American Physical Society March Meeting 2021 held March 15-19, 2021. US DOE, 2021. http://dx.doi.org/10.2172/1855714.

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Reichhardt, C. J. Olson, C. Reichhardt i A. Libal. "Topological defects from doping and quenched disorder in artificial ice systems". W 2010 International Conference on Electromagnetics in Advanced Applications (ICEAA). IEEE, 2010. http://dx.doi.org/10.1109/iceaa.2010.5653065.

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Choudhury, Rajul Ranjan, R. Chitra, Lata Panicker i V. B. Jayakrishnan. "Influence of anthracene doping on the order-disorder phase transition in phenanthrene". W SOLID STATE PHYSICS: PROCEEDINGS OF THE 57TH DAE SOLID STATE PHYSICS SYMPOSIUM 2012. AIP, 2013. http://dx.doi.org/10.1063/1.4790902.

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Chacaliaza-Ricaldi, J., J. L. Clabel H., G. Lozano C., V. A. G. Rivera i E. Marega. "Study of optical properties of zinc-tellurite glasses doped with Yb3+, Tm3+ and Er3+: Analysis of the influence of rare-earth ions doping on host matrix modification." W Latin America Optics and Photonics Conference. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/laop.2022.w4a.45.

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By means of UV-VIS absorption measurements to zinc-tellurite glasses doped with Yb, Tm and Er, we obtained the band gaps, Urbach energies, the polarizability values and the Judd-Ofelt parameters, which indicated an increase in the structural disorder in the host matrix.

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Chen, Ting, Gui-Lan Chang, Lie-Ming Yao i Wen-Ju Chen. "Radiative and nonradiative transition of Pr3+ and Eu3+ in LaP5O14, LiNbO3, and SBN". W OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1987. http://dx.doi.org/10.1364/oam.1987.wf3.

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The absorption and fluorescence spectra as well as lifetimes of Pr3+ and Eu3+ in LaP5O14, LiNbO3, and SBN(Sr0.61Ba0.39Nb2O6) for the transitions between the 4f n states are presented. Comparisons of the calculated lifetimes based on Judd-Ofelt theory and absorption data with the experimental results have been made. For Eu3+, there is good agreement between the theoretical and experimental values. The spectral linewidths of Eu3+ in SBN are much broader than those in EuP5O14. For the 5D0—7F2 transition, the strong dependence of the fluorescence peak frequency on the excited wavelength and the strong dependence of the fluorescence intensity on temperature reflect the partly disordered nature of the structure of SBN. For Pr3+ in PrP5O14, the discrepancy between the theoretical and experimental results arises from the strong cross-relaxation among the Pr3+ ions. In low-doping LiNbO3 and SBN the fluorescence spectral linewidths and intensities of Pr3+ are much larger than those in PrP5O14, and the lifetimes of Pr3+ in the former hosts are at least 3 orders of magnitude longer than those in the latter host.

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Dagesyan, Sarkis A., Denis Presnov, Serafima Y. Ryzhenkova, Ivan V. Sapkov, Viktor R. Gaydamachenko, George A. Zharik i Anton S. Stepanov. "Fabrication of electrodes for a logic element based on a disordered dopant atoms network". W The International Conference on Micro- and Nano-Electronics 2018, redaktorzy Vladimir F. Lukichev i Konstantin V. Rudenko. SPIE, 2019. http://dx.doi.org/10.1117/12.2522487.

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Zuppiroli, L. "Role of the dopant counter-ions in the transport and magnetic properties of disordered conducting polymers". W International Conference on Science and Technology of Synthetic Metals. IEEE, 1994. http://dx.doi.org/10.1109/stsm.1994.834650.

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Kador, L. "Electric-Field Effects on Hole Spectra in Doped Polymers: A Step towards Two-Dimensional Optical Spectroscopy". W Persistent Spectral Hole Burning: Science and Applications. Washington, D.C.: Optica Publishing Group, 1991. http://dx.doi.org/10.1364/pshb.1991.thd4.

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Optical absorption bands of organic dye molecules or inorganic ions in condensed matter are affected by inhomogeneous broadening [1] and are thus usually much broader than the corresponding homogeneous lines. In disordered systems, the difference can amount to several orders of magnitude at low temperatures. In order to detect the effects of external perturbations such as hydrostatic pressure or electric fields on an inhomogeneous band, the perturbations must therefore have very large magnitudes. The sensitivity can be greatly enhanced by investigating the changes of hole-burning spectra caused by the external fields. In amorphous matrices, an external electric field gives rise to a symmetrical broadening of spectral holes due to the linear Stark effect. This was shown to be true even in the case of centrosymmetric dopant molecules where the first-order Stark effect is ascribed to matrix-induced dipole moments [2] (see Fig. 1). The magnitude of the broadening yields thus information on the electrostatic dye-matrix interaction.

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