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Data publikacji: 6 lipca 2024

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1

Finkelstein, H., M. J. Hsu i S. C. Esener. "Dual-junction single-photon avalanche diode". Electronics Letters 43, nr 22 (2007): 1228. http://dx.doi.org/10.1049/el:20072355.

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2

Kodet, Jan, Ivan Prochazka, Josef Blazej, Xiaoli Sun i John Cavanaugh. "Single photon avalanche diode radiation tests". Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 695 (grudzień 2012): 309–12. http://dx.doi.org/10.1016/j.nima.2011.11.001.

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3

Lee, Changhyuk, Ben Johnson i Alyosha Molnar. "Angle sensitive single photon avalanche diode". Applied Physics Letters 106, nr 23 (8.06.2015): 231105. http://dx.doi.org/10.1063/1.4922526.

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4

Zappa, F., A. Gulinatti, P. Maccagnani, S. Tisa i S. Cova. "SPADA: single-photon avalanche diode arrays". IEEE Photonics Technology Letters 17, nr 3 (marzec 2005): 657–59. http://dx.doi.org/10.1109/lpt.2004.840920.

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Chen, Zhen, Bo Liu, Guangmeng Guo, Kangjian Hua i Weiqiang Han. "Photon Counting Heterodyne With a Single Photon Avalanche Diode". IEEE Photonics Technology Letters 33, nr 17 (1.09.2021): 931–34. http://dx.doi.org/10.1109/lpt.2021.3098553.

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Tisa, S., F. Zappa, A. Tosi i S. Cova. "Electronics for single photon avalanche diode arrays". Sensors and Actuators A: Physical 140, nr 1 (październik 2007): 113–22. http://dx.doi.org/10.1016/j.sna.2007.06.022.

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7

Li, Yichen, Majid Safari, Robert Henderson i Harald Haas. "Optical OFDM With Single-Photon Avalanche Diode". IEEE Photonics Technology Letters 27, nr 9 (1.05.2015): 943–46. http://dx.doi.org/10.1109/lpt.2015.2402151.

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8

Li, Li‐Qiang, i Lloyd M. Davis. "Single photon avalanche diode for single molecule detection". Review of Scientific Instruments 64, nr 6 (czerwiec 1993): 1524–29. http://dx.doi.org/10.1063/1.1144463.

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Dalla Mora, Alberto, Alberto Tosi, Simone Tisa i Franco Zappa. "Single-Photon Avalanche Diode Model for Circuit Simulations". IEEE Photonics Technology Letters 19, nr 23 (grudzień 2007): 1922–24. http://dx.doi.org/10.1109/lpt.2007.908768.

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10

Lacaita, A., M. Ghioni i S. Cova. "Double epitaxy improves single-photon avalanche diode performance". Electronics Letters 25, nr 13 (1989): 841. http://dx.doi.org/10.1049/el:19890567.

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11

Hu, Jun, Xiao Bin Xin, Petre Alexandrov, Jian Hui Zhao, Brenda L. VanMil, D. Kurt Gaskill, Kok Keong Lew, Rachael L. Myers-Ward i Charles R. Eddy. "4H-SiC Single Photon Avalanche Diode for 280nm UV Applications". Materials Science Forum 600-603 (wrzesień 2008): 1203–6. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1203.

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This paper reports a 4H-SiC single photo avalanche diode (SPAD) operating at the solar blind wavelength of 280 nm. The SPAD has an avalanche breakdown voltage of 114V. At 90% and 95% of the breakdown voltage, the SPAD shows a low dark current of 57.2fA and 159fA, respectively. The quantum efficiency of 29.8% at 280nm and <0.007% at 400nm indicates a high UV-to-visible rejection ratio of >4300. Single photon counting measurement at 280nm shows that a single photon detection efficiency of 2.83% with a low dark count rate of 22kHz is achieved at the avalanche breakdown voltage of 116.8V.
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12

Rech, Ivan, Stefano Marangoni, Daniele Resnati, Massimo Ghioni i Sergio Cova. "Multipixel single-photon avalanche diode array for parallel photon counting applications". Journal of Modern Optics 56, nr 2-3 (20.01.2009): 326–33. http://dx.doi.org/10.1080/09500340802318309.

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13

Khudyakov, Dmitry S. "Capabilities of image sensors with a photonic avalanche diode". Analysis and data processing systems, nr 2 (28.06.2022): 69–80. http://dx.doi.org/10.17212/2782-2001-2022-2-69-80.

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In many fields of science and technology there is a need to record fast running processes and phenomena, often occurring in low light conditions. In such cases, there is a need to use highly sensitive image sensors. Such sensors can be constructed on the basis of photon avalanche diodes capable of capturing even single photons. However, creating this type of sensor with high performance, in particular, with high resolution, presents a number of technological challenges, as they are more complex than traditional CMOS (Complementary Metal–Oxide–Semiconductor) and CCD (Charge-Coupled Device) sensors. Using recent advances and new circuitry, Canon created the first megapixel image sensor with a photon avalanche diode (Single Photon Avalanche Diode, SPAD). In this article, in addition to general issues related to image sensors with photon avalanche diode, the design, operation, characteristics, features and possible applications of Canon’s SPAD megapixel sensor are discussed. In particular, the methods of photon counting and time-of-flight are discussed, as well as the dynamic range of the sensor, the possibilities of sensor application for imaging in the infrared range, and the prospects for wide application of SPAD sensors in the near future. As a result, it can be noted that in addition to direct use for obtaining high-quality 2D-images of fast processes running in low light conditions, such a sensor can be used for taking images in the infrared range, to obtain 3D-images for xReality, measuring the distance to objects, obtaining a depth map, as well as in areas of science and technology that are new for such devices, including, for example, quantum computing.
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14

He, Tingting, Xiaohong Yang, Yongsheng Tang, Rui Wang i Yijun Liu. "High photon detection efficiency InGaAs/InP single photon avalanche diode at 250 K". Journal of Semiconductors 43, nr 10 (1.10.2022): 102301. http://dx.doi.org/10.1088/1674-4926/43/10/102301.

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Abstract Planar semiconductor InGaAs/InP single photon avalanche diodes with high responsivity and low dark count rate are preferred single photon detectors in near-infrared communication. However, even with well-designed structures and well-controlled operational conditions, the performance of InGaAs/InP SPADs is limited by the inherent characteristics of avalanche process and the growth quality of InGaAs/InP materials. It is difficult to ensure high detection efficiency while the dark count rate is controlled within a certain range at present. In this paper, we fabricated a device with a thick InGaAs absorption region and an anti-reflection layer. The quantum efficiency of this device reaches 83.2%. We characterized the single-photon performance of the device by a quenching circuit consisting of parallel-balanced InGaAs/InP single photon detectors and single-period sinusoidal pulse gating. The spike pulse caused by the capacitance effect of the device is eliminated by using the characteristics of parallel balanced common mode signal elimination, and the detection of small avalanche pulse amplitude signal is realized. The maximum detection efficiency is 55.4% with a dark count rate of 43.8 kHz and a noise equivalent power of 6.96 × 10−17 W/Hz1/2 at 247 K. Compared with other reported detectors, this SPAD exhibits higher SPDE and lower noise-equivalent power at a higher cooling temperature.
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15

Bulling, Anthony Frederick, i Ian Underwood. "Pion Detection Using Single Photon Avalanche Diodes". Sensors 23, nr 21 (27.10.2023): 8759. http://dx.doi.org/10.3390/s23218759.

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We present the first reported use of a CMOS-compatible single photon avalanche diode (SPAD) array for the detection of high-energy charged particles, specifically pions, using the Super Proton Synchrotron at CERN, the European Organization for Nuclear Research. The results confirm the detection of incident high-energy pions at 120 GeV, minimally ionizing, which complements the variety of ionizing radiation that can be detected with CMOS SPADs.
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16

Meng, Xiao, Shiyu Xie, Xinxin Zhou, Niccolò Calandri, Mirko Sanzaro, Alberto Tosi, Chee Hing Tan i Jo Shien Ng. "InGaAs/InAlAs single photon avalanche diode for 1550 nm photons". Royal Society Open Science 3, nr 3 (marzec 2016): 150584. http://dx.doi.org/10.1098/rsos.150584.

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A single photon avalanche diode (SPAD) with an InGaAs absorption region, and an InAlAs avalanche region was designed and demonstrated to detect 1550 nm wavelength photons. The characterization included leakage current, dark count rate and single photon detection efficiency as functions of temperature from 210 to 294 K. The SPAD exhibited good temperature stability, with breakdown voltage dependence of approximately 45 mV K −1 . Operating at 210 K and in a gated mode, the SPAD achieved a photon detection probability of 26% at 1550 nm with a dark count rate of 1 × 10 8 Hz. The time response of the SPAD showed decreasing timing jitter (full width at half maximum) with increasing overbias voltage, with 70 ps being the smallest timing jitter measured.
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17

Liu, Chen, Hai-Feng Ye i Yan-Li Shi. "Advances in near-infrared avalanche diode single-photon detectors". Chip 1, nr 1 (marzec 2022): 100005. http://dx.doi.org/10.1016/j.chip.2022.100005.

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18

Afshar, Saeed, Tara Julia Hamilton, Langdon Davis, Andre Van Schaik i Dennis Delic. "Event-Based Processing of Single Photon Avalanche Diode Sensors". IEEE Sensors Journal 20, nr 14 (15.07.2020): 7677–91. http://dx.doi.org/10.1109/jsen.2020.2979761.

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19

Buller, G. S., J. P. R. David, S. Cova, J. S. Ng, L. J. J. Tan, A. B. Krysa, S. Pellegrini i R. E. Warburton. "Single-photon avalanche diode detectors for quantum key distribution". IET Optoelectronics 1, nr 6 (1.12.2007): 249–54. http://dx.doi.org/10.1049/iet-opt:20070046.

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20

Lubin, Gur, Ron Tenne, Ivan Michel Antolovic, Edoardo Charbon, Claudio Bruschini i Dan Oron. "Quantum correlation measurement with single photon avalanche diode arrays". Optics Express 27, nr 23 (28.10.2019): 32863. http://dx.doi.org/10.1364/oe.27.032863.

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21

Itzler, Mark A., Xudong Jiang, Mark Entwistle, Krystyna Slomkowski, Alberto Tosi, Fabio Acerbi, Franco Zappa i Sergio Cova. "Advances in InGaAsP-based avalanche diode single photon detectors". Journal of Modern Optics 58, nr 3-4 (10.02.2011): 174–200. http://dx.doi.org/10.1080/09500340.2010.547262.

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22

Finkelstein, Hod, Mark J. Hsu, Sanja Zlatanovic i Sadik Esener. "Performance trade-offs in single-photon avalanche diode miniaturization". Review of Scientific Instruments 78, nr 10 (październik 2007): 103103. http://dx.doi.org/10.1063/1.2796146.

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23

Zappa, F., S. Tisa, A. Tosi i S. Cova. "Principles and features of single-photon avalanche diode arrays". Sensors and Actuators A: Physical 140, nr 1 (październik 2007): 103–12. http://dx.doi.org/10.1016/j.sna.2007.06.021.

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24

Acerbi, F., M. Anti, A. Tosi i F. Zappa. "Design Criteria for InGaAs/InP Single-Photon Avalanche Diode". IEEE Photonics Journal 5, nr 2 (kwiecień 2013): 6800209. http://dx.doi.org/10.1109/jphot.2013.2258664.

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25

Habib, Mohammad Habib Ullah, i Nicole Mcfarlane. "A Tunable Dynamic Range Digital Single Photon Avalanche Diode". IEEE Electron Device Letters 38, nr 1 (styczeń 2017): 60–63. http://dx.doi.org/10.1109/led.2016.2628023.

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26

WANG Wei, 王巍, 鲍孝圆 BAO Xiao-yuan, 陈丽 CHEN Li, 徐媛媛 XU Yuan-yuan, 陈婷 CHEN Ting i 王冠宇 WANG Guan-yu. "A CMOS Single Photon Avalanche Diode Device with High Photon Detection Efficiency". ACTA PHOTONICA SINICA 45, nr 8 (2016): 823001. http://dx.doi.org/10.3788/gzxb20164508.0823001.

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27

WANG Wei, 王巍, 陈婷 CHEN Ting, 李俊峰 LI Jun-feng, 何雍春 HE Yong-chun, 王冠宇 WANG Guan-yu, 唐政维 TANG Zheng-wei, 袁军 YUAN Jun i 王广 WANG Guang. "The Research of High Photon Detection Efficiency CMOS Single Photon Avalanche Diode". ACTA PHOTONICA SINICA 46, nr 8 (2017): 823001. http://dx.doi.org/10.3788/gzxb20174608.0823001.

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28

Wang, Wei, Ting Chen, Yongchun He, Mengjia Huang, Hao Yang, Guanyu Wang, Zhenglin Yang i Jun Yuan. "The design and characterization of high photon detection efficiency CMOS single-photon avalanche diode". Modern Physics Letters B 32, nr 25 (5.09.2018): 1850302. http://dx.doi.org/10.1142/s0217984918503025.

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The high photon detection efficiency (PDE) single-photon avalanche diode (SPAD) designed with a low voltage standard 0.18 [Formula: see text]m CMOS process is investigated in detail. The proposed CMOS SPAD is with P+/N-well junction structure, and its multiplication region is surrounded by a virtual guard ring, with which the premature edge avalanche breakdown can be prevented. The analytical and simulation results show that the CMOS SPAD has a uniform electric field distribution in P+/N-well junction, and the breakdown voltage is as low as 8.2 V, the PDE is greater than 40% at the wavelength range of 650–950 nm, at a low excess bias voltage (light intensity is about 0.001 W/cm2), and the peak PDE at 800 nm is about 48%, the relatively low dark count rate (DCR) of 1.4 KHz is obtained.
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29

Zheng, Lixia, Huan Hu, Ziqing Weng, Qun Yao, Jin Wu i Weifeng Sun. "Compact Active Quenching Circuit for Single Photon Avalanche Diodes Arrays". Journal of Circuits, Systems and Computers 26, nr 10 (2.03.2017): 1750149. http://dx.doi.org/10.1142/s0218126617501493.

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A compact quenching circuit for Single Photon Avalanche Diode (SPAD) arrays is presented. The proposed circuit preserves the advantages of small area occupation and low power consumption, since it mainly adopts the junction capacitance of the detector to sense the avalanche current. The sensing time is now limited more by the detector rather than the circuit itself. Fabricated in TSMC standard 0.35[Formula: see text][Formula: see text]m CMOS process, the proposed circuit only occupies an area of 20[Formula: see text][Formula: see text]m[Formula: see text][Formula: see text][Formula: see text]31[Formula: see text][Formula: see text]m and can operate properly with the detector biased up to 5[Formula: see text]V above breakdown. The circuit functionality has been verified by experimental measurements, operating with 64[Formula: see text][Formula: see text][Formula: see text]64 InGaAs/InP single photon avalanche diode arrays for time-of-flight-based applications.
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Chaves de Albuquerque, Tulio, Dylan Issartel, Raphaël Clerc, Patrick Pittet, Rémy Cellier, Dominique Golanski, Sébastien Jouan, Andreia Cathelin i Francis Calmon. "Indirect avalanche event detection of Single Photon Avalanche Diode implemented in CMOS FDSOI technology". Solid-State Electronics 163 (styczeń 2020): 107636. http://dx.doi.org/10.1016/j.sse.2019.107636.

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31

Wang, Chen, Jingyuan Wang, Zhiyong Xu, Rong Wang, Jianhua Li, Jiyong Zhao, Yimei Wei i Yong Lin. "Design considerations of InGaAs/InP single-photon avalanche diode for photon-counting communication". Optik 185 (maj 2019): 1134–45. http://dx.doi.org/10.1016/j.ijleo.2019.04.053.

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32

Wang, Yang, Xiangliang Jin, Shengguo Cao, Yan Peng i Jun Luo. "Analysis of gate-controlled single photon avalanche diode with high photon-detection-probability". Optics Communications 482 (marzec 2021): 126588. http://dx.doi.org/10.1016/j.optcom.2020.126588.

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33

Savuskan, Vitali, Igor Brouk, Michael Javitt i Yael Nemirovsky. "An Estimation of Single Photon Avalanche Diode (SPAD) Photon Detection Efficiency (PDE) Nonuniformity". IEEE Sensors Journal 13, nr 5 (maj 2013): 1637–40. http://dx.doi.org/10.1109/jsen.2013.2240154.

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34

Gulinatti, Angelo. "Single photon avalanches diodes". Photoniques, nr 125 (2024): 63–68. http://dx.doi.org/10.1051/photon/202412563.

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Twenty years ago the detection of single photons was little more than a scientific curiosity reserved to a few specialists. Today it is a flourishing field with an ecosystem that extends from university laboratories to large semiconductor manufacturers. This change of paradigm has been stimulated by the emergence of critical applications that rely on single photon detection, and by technical progresses in the detector field. The single photon avalanche diode has unquestionably played a major role in this process.
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35

Jegannathan, Gobinath, Hans Ingelberts i Maarten Kuijk. "Current-Assisted Single Photon Avalanche Diode (CASPAD) Fabricated in 350 nm Conventional CMOS". Applied Sciences 10, nr 6 (22.03.2020): 2155. http://dx.doi.org/10.3390/app10062155.

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A current-assisted single-photon avalanche diode (CASPAD) is presented with a large and deep absorption volume combined with a small p-n junction in its middle to perform avalanche trigger detection. The absorption volume has a drift field that serves as a guiding mechanism to the photo-generated minority carriers by directing them toward the avalanche breakdown region of the p-n junction. This drift field is created by a majority current distribution in the thick (highly-resistive) epi-layer that is present because of an applied voltage bias between the p-anode of the avalanching region and the perimeter of the detector. A first CASPAD device fabricated in 350-nm CMOS shows functional operation for NIR (785-nm) photons; absorbed in a volume of 40 × 40 × 14 μm3. The CASPAD is characterized for its photon-detection probability (PDP), timing jitter, dark-count rate (DCR), and after pulsing.
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36

Kennedy, Simon, Daniel Morrison, Dennis Delic, Mehmet Rasit Yuce i Jean-Michel Redoute. "Fully-Integrated Dickson Converters for Single Photon Avalanche Diode Arrays". IEEE Access 9 (2021): 10523–32. http://dx.doi.org/10.1109/access.2021.3050170.

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37

Madonini, Francesca, i Federica Villa. "Single Photon Avalanche Diode Arrays for Time-Resolved Raman Spectroscopy". Sensors 21, nr 13 (23.06.2021): 4287. http://dx.doi.org/10.3390/s21134287.

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The detection of peaks shifts in Raman spectroscopy enables a fingerprint reconstruction to discriminate among molecules with neither labelling nor sample preparation. Time-resolved Raman spectroscopy is an effective technique to reject the strong fluorescence background that profits from the time scale difference in the two responses: Raman photons are scattered almost instantaneously while fluorescence shows a nanoseconds time constant decay. The combination of short laser pulses with time-gated detectors enables the collection of only those photons synchronous with the pulse, thus rejecting fluorescent ones. This review addresses time-gating issues from the sensor standpoint and identifies single photon avalanche diode (SPAD) arrays as the most suitable single-photon detectors to be rapidly and precisely time-gated without bulky, complex, or expensive setups. At first, we discuss the requirements for ideal Raman SPAD arrays, particularly focusing on the design guidelines for optimized on-chip processing electronics. Then we present some existing SPAD-based architectures, featuring specific operation modes which can be usefully exploited for Raman spectroscopy. Finally, we highlight key aspects for future ultrafast Raman platforms and highly integrated sensors capable of undistorted identification of Raman peaks across many pixels.
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38

Madonini, Francesca, Fabio Severini, Franco Zappa i Federica Villa. "Single Photon Avalanche Diode Arrays for Quantum Imaging and Microscopy". Advanced Quantum Technologies 4, nr 7 (14.05.2021): 2100005. http://dx.doi.org/10.1002/qute.202100005.

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39

Bruza, Petr, Arthur Petusseau, Arin Ulku, Jason Gunn, Samuel Streeter, Kimberley Samkoe, Claudio Bruschini, Edoardo Charbon i Brian Pogue. "Single-photon avalanche diode imaging sensor for subsurface fluorescence LiDAR". Optica 8, nr 8 (20.08.2021): 1126. http://dx.doi.org/10.1364/optica.431521.

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40

Ding, Xun, Kai Zang, Tianzhe Zheng, Yueyang Fei, Mingqi Huang, Xiang Liu, Yuefei Wang i in. "Improving characterization capabilities in new single-photon avalanche diode research". Review of Scientific Instruments 90, nr 4 (kwiecień 2019): 043108. http://dx.doi.org/10.1063/1.5041502.

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41

Labanca, I., F. Ceccarelli, A. Gulinatti, M. Ghioni i I. Rech. "Triple epitaxial single‐photon avalanche diode for multichannel timing applications". Electronics Letters 54, nr 10 (maj 2018): 644–45. http://dx.doi.org/10.1049/el.2018.0692.

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42

Hernández, Iván Coto, Mauro Buttafava, Gianluca Boso, Alberto Diaspro, Alberto Tosi i Giuseppe Vicidomini. "Gated STED microscopy with time-gated single-photon avalanche diode". Biomedical Optics Express 6, nr 6 (27.05.2015): 2258. http://dx.doi.org/10.1364/boe.6.002258.

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43

Richardson, Justin A., Eric A. G. Webster, Lindsay A. Grant i Robert K. Henderson. "Scaleable Single-Photon Avalanche Diode Structures in Nanometer CMOS Technology". IEEE Transactions on Electron Devices 58, nr 7 (lipiec 2011): 2028–35. http://dx.doi.org/10.1109/ted.2011.2141138.

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44

Moscatelli, Francesco, Martino Marisaldi, Piera Maccagnani, Claudio Labanti, Fabio Fuschino, Michela Prest, Alessandro Berra i in. "Radiation tests of single photon avalanche diode for space applications". Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 711 (maj 2013): 65–72. http://dx.doi.org/10.1016/j.nima.2013.01.056.

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45

Mata Pavia, Juan, Martin Wolf i Edoardo Charbon. "Single-Photon Avalanche Diode Imagers Applied to Near-Infrared Imaging". IEEE Journal of Selected Topics in Quantum Electronics 20, nr 6 (listopad 2014): 291–98. http://dx.doi.org/10.1109/jstqe.2014.2313983.

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46

Qi, Lin, K. R. C. Mok, Mahdi Aminian, Edoardo Charbon i Lis K. Nanver. "UV-Sensitive Low Dark-Count PureB Single-Photon Avalanche Diode". IEEE Transactions on Electron Devices 61, nr 11 (listopad 2014): 3768–74. http://dx.doi.org/10.1109/ted.2014.2351576.

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47

Merck, C., P. Holl, M. Laatiaoui, G. Lutz, H. G. Moser, N. Otte, R. H. Richter i L. Strüder. "Timing properties of an avalanche diode for single photon counting". Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 567, nr 1 (listopad 2006): 272–75. http://dx.doi.org/10.1016/j.nima.2006.05.106.

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Gras, Gaëtan, Nigar Sultana, Anqi Huang, Thomas Jennewein, Félix Bussières, Vadim Makarov i Hugo Zbinden. "Optical control of single-photon negative-feedback avalanche diode detector". Journal of Applied Physics 127, nr 9 (7.03.2020): 094502. http://dx.doi.org/10.1063/1.5140824.

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Zheng, Lixia, Jin Wu, Longxing Shi, Shuiqing Xi, Siyang Liu i Weifeng Sun. "Active quenching circuit for a InGaAs single-photon avalanche diode". Journal of Semiconductors 35, nr 4 (kwiecień 2014): 045011. http://dx.doi.org/10.1088/1674-4926/35/4/045011.

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Llin, Lourdes Ferre, Jarosław Kirdoda, Fiona Thorburn, Laura L. Huddleston, Zoë M. Greener, Kateryna Kuzmenko, Peter Vines i in. "High sensitivity Ge-on-Si single-photon avalanche diode detectors". Optics Letters 45, nr 23 (24.11.2020): 6406. http://dx.doi.org/10.1364/ol.396756.

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