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Artykuły w czasopismach na temat "Diode à avalanche à photon unique"
Finkelstein, H., M. J. Hsu i S. C. Esener. "Dual-junction single-photon avalanche diode". Electronics Letters 43, nr 22 (2007): 1228. http://dx.doi.org/10.1049/el:20072355.
Pełny tekst źródłaKodet, Jan, Ivan Prochazka, Josef Blazej, Xiaoli Sun i John Cavanaugh. "Single photon avalanche diode radiation tests". Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 695 (grudzień 2012): 309–12. http://dx.doi.org/10.1016/j.nima.2011.11.001.
Pełny tekst źródłaLee, Changhyuk, Ben Johnson i Alyosha Molnar. "Angle sensitive single photon avalanche diode". Applied Physics Letters 106, nr 23 (8.06.2015): 231105. http://dx.doi.org/10.1063/1.4922526.
Pełny tekst źródłaZappa, F., A. Gulinatti, P. Maccagnani, S. Tisa i S. Cova. "SPADA: single-photon avalanche diode arrays". IEEE Photonics Technology Letters 17, nr 3 (marzec 2005): 657–59. http://dx.doi.org/10.1109/lpt.2004.840920.
Pełny tekst źródłaChen, Zhen, Bo Liu, Guangmeng Guo, Kangjian Hua i Weiqiang Han. "Photon Counting Heterodyne With a Single Photon Avalanche Diode". IEEE Photonics Technology Letters 33, nr 17 (1.09.2021): 931–34. http://dx.doi.org/10.1109/lpt.2021.3098553.
Pełny tekst źródłaTisa, S., F. Zappa, A. Tosi i S. Cova. "Electronics for single photon avalanche diode arrays". Sensors and Actuators A: Physical 140, nr 1 (październik 2007): 113–22. http://dx.doi.org/10.1016/j.sna.2007.06.022.
Pełny tekst źródłaLi, Yichen, Majid Safari, Robert Henderson i Harald Haas. "Optical OFDM With Single-Photon Avalanche Diode". IEEE Photonics Technology Letters 27, nr 9 (1.05.2015): 943–46. http://dx.doi.org/10.1109/lpt.2015.2402151.
Pełny tekst źródłaLi, Li‐Qiang, i Lloyd M. Davis. "Single photon avalanche diode for single molecule detection". Review of Scientific Instruments 64, nr 6 (czerwiec 1993): 1524–29. http://dx.doi.org/10.1063/1.1144463.
Pełny tekst źródłaDalla Mora, Alberto, Alberto Tosi, Simone Tisa i Franco Zappa. "Single-Photon Avalanche Diode Model for Circuit Simulations". IEEE Photonics Technology Letters 19, nr 23 (grudzień 2007): 1922–24. http://dx.doi.org/10.1109/lpt.2007.908768.
Pełny tekst źródłaLacaita, A., M. Ghioni i S. Cova. "Double epitaxy improves single-photon avalanche diode performance". Electronics Letters 25, nr 13 (1989): 841. http://dx.doi.org/10.1049/el:19890567.
Pełny tekst źródłaRozprawy doktorskie na temat "Diode à avalanche à photon unique"
B??rub??, Beno??t-Louis. "Conception de matrices de diodes avalanche ?? photon unique sur circuits int??gr??s CMOS 3D". Thèse, Universit?? de Sherbrooke, 2014. http://savoirs.usherbrooke.ca/handle/11143/92.
Pełny tekst źródłaBérubé, Benoît-Louis. "Conception de matrices de diodes avalanche à photon unique sur circuits intégrés CMOS 3D". Thèse, Université de Sherbrooke, 2014. http://savoirs.usherbrooke.ca/handle/11143/92.
Pełny tekst źródłaSicre, Mathieu. "Study of the noise aging mechanisms in single-photon avalanche photodiode for time-of-flight imaging". Electronic Thesis or Diss., Lyon, INSA, 2023. http://www.theses.fr/2023ISAL0104.
Pełny tekst źródłaSingle-Photon Avalanche Diode (SPAD) are used for Time-of-Flight (ToF) sensors to determine distance from a target by measuring the travel time of an emitted pulsed signal. These photodetectors work by triggering an avalanche of charge carriers upon photon absorption, resulting in a substantial amplification which can be detected. However, they are subject to spurious triggering by parasitic generated charge carriers, quantified as Dark Count Rate (DCR), which can compromise the accuracy of the measured distance. Therefore, it is crucial to identify and eliminate the potential source of DCR. To tackle this issue, a simulation methodology has been implemented to assess the DCR. This is achieved by simulating the avalanche breakdown probability, integrated with the carrier generation rate from defects. The breakdown probability can be simulated either in a deterministically, based on electric-field streamlines, or stochastically, by means of drift-diffusion simulation of the random carrier path. This methodology allows for the identification of the potential sources of pre-stress DCR by comparing simulation results to experimental data over a wide range of voltage and temperature. To ensure the accuracy of distance range measurements over time, it is necessary to predict the DCR level under various operating conditions. The aforementioned simulation methodology is used to identify the potential sources of post-stress DCR by comparing simulation results to stress experiments that evaluate the principal stress factors, namely temperature, voltage and irradiance. Furthermore, a Monte-Carlo study has been conducted to examine the device-to-device variation along stress duration. For an accurate Hot-Carrier Degradation (HCD) kinetics model, it is essential to consider not only the carrier energy distribution function but also the distribution of Si−H bond dissociation energy distribution at the Si/SiO2 interface. The number of available hot carriers is estimated from the carrier current density according to the carrier energy distribution simulated by means of a full-band Monte-Carlo method. The impact-ionization dissociation probability is employed to model the defect creation process, which exhibits sub-linear time dependence due to the gradual exhaustion of defect precursors. Accurate distance ranging requires distinguishing the signal from ambient noise and the DCR floor, and ensuring the target’s accumulated photon signal dominates over other random noise sources. An analytical formula allows to estimate the maximum distance ranging using the maximum signal strength, ambient noise level, and confidence levels. The impact of DCR can be estimated by considering the target’s reflectance and the ambient light conditions. In a nutshell, this work makes use of a in-depth characterization and simulation methodology to predict DCR in SPAD devices along stress duration, thereby allowing the assessment of its impact on distance range measurements
Panglosse, Aymeric. "Modélisation pour la simulation et la prédiction des performances des photodiodes à avalanche en mode Geiger pour Lidars spatiaux". Thesis, Toulouse, ISAE, 2019. http://www.theses.fr/2019ESAE0046.
Pełny tekst źródłaThis work focuses on modelling for simulation and prediction purposes ofCMOS SPADs performance parameters used in spaceborne Lidars. The innovative side ofthis work lies in a new methodology based on physical models for semiconductor devices,measurements performed on the targeted CMOS process and commercial simulation tools topredict CMOS SPADs performances. This method allows to get as close as possible to theprocess reality and to improve predictions. A set of SPAD has been designed and fabricated,and is used for measurements and model validation. SPAD design has been done with respectto CNES and Airbus Defence Space Lidar specification, in order to produce devices that willimprove our knowledge in terms of understanding of the involved physical mechanisms, SPADsdesign and test method, for a possible integration within their future spaceborne Lidars
Rumbley, Sarah (Sarah E. ). "Photon-efficient computational imaging with single-photon avalanche diode (SPAD) arrays". Thesis, Massachusetts Institute of Technology, 2015. http://hdl.handle.net/1721.1/106005.
Pełny tekst źródłaThis electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student-submitted PDF version of thesis.
Includes bibliographical references (pages 77-78).
Single-photon avalanche diodes (SPADs) are highly sensitive photodetectors that enable LIDAR imaging at extremely low photon flux levels. While conventional image formation methods require hundreds or thousands of photon detections per pixel to suppress noise, a recent computational approach achieves comparable results when forming reflectivity and depth images from on the order of 1 photon detection per pixel. This method uses the statistics underlying photon detections, along with the assumption that depth and reflectivity are spatially correlated in natural scenes, to perform noise censoring and regularized maximum-likelihood estimation. We expand on this research by adapting the method for use with SPAD arrays, accounting for the spatial non-uniformity of imaging parameters and the effects of crosstalk. We develop statistical models that incorporate these non-idealities, and present a statistical method for censoring crosstalk detections. We show results that demonstrate the performance of our method on simulated data with a range of imaging parameters.
by Sarah Rumbley.
M. Eng.
Neri, Lorenzo. "Time Resolved Single Photon Imaging Device with Single Photon Avalanche Diode". Thesis, Università degli Studi di Catania, 2011. http://hdl.handle.net/10761/183.
Pełny tekst źródłaAbbiamo studiato un nuovo sensore ottico caratterizzato da prestazioni che estenderanno le funzionalita' di molte nuove tecniche di indagine fisica. Il nostro dispositivo si basa su una matrice bidimensionale di Single Photon Avalanche Diode (SPAD), in grado di fornire il tempo di arrivo di ogni singolo fotone con una precisione del decimo di nanosecondo. Il nostro apparato e' in grado di acquisire là ¢ arrivo dei fotoni con continuita', senza interruzioni dovute al processo di lettura, ed e' inoltre resistente a fonti di luce eccessiva che costituiscono una limitazione per i normali dispositivi a singolo fotone. La soluzione proposta costituisce un passo in avanti per tutte le analisi basate sulla correlazione temporale a singolo fotone, come la Fluorescence Lifetime Imaging Microscopy, Dynamic Light Scattering, 3D Camera, Particle Imaging Velocimetry e Adaptive Optics. Grazie allo studio delle caratteristiche elettriche del singolo SPAD e' stato possibile individuare varie strategie di lettura. Il modello elettrico sviluppato e' stato inoltre utilizzato per simulare diverse configurazioni elettriche della matrici bidimensionali di sensori. Abbiamo studiato le caratteristiche funzionali del singolo SPAD ponendo l'attenzione sui fenomeni che alterano la linearita' di ri-sposta, siamo stati cosi' in grado di estendere di quattro ordini di grandezza il suo intervallo di utilizzo, e di utilizzare la saturazione come una funzione di compressione dei dati prodotti dal sensore. Le equazioni presentate estendono la correzione degli effetti del tempo morto, gia' presenti in letteratura, dallà ¢ analisi del caso stazionario a quello delle sorgenti variabili nel tempo, e sono inoltre estendibili a qualunque configurazione di tempo morto. La produzione di un prototipo funzionante ha compreso inoltre la realizzazione dell'elettronica di acquisizione, dell'algoritmo di calibrazione del sensore e di ricostruzione delle immagini. Il dispositivo e' stato testato realizzando diversi esperimenti, che hanno permesso di valutare le caratteristiche e i limiti delle soluzioni tecnologiche adottate.
Fisher, Edward Michael Dennis. "Parallel reconfigurable single photon avalanche diode array for optical communications". Thesis, University of Edinburgh, 2015. http://hdl.handle.net/1842/11690.
Pełny tekst źródłaWebster, Eric Alexander Garner. "Single-Photon Avalanche Diode theory, simulation, and high performance CMOS integration". Thesis, University of Edinburgh, 2013. http://hdl.handle.net/1842/17987.
Pełny tekst źródłaChitnis, Danial. "Single photon avalanche diodes for optical communications". Thesis, University of Oxford, 2013. http://ora.ox.ac.uk/objects/uuid:5fd582dd-8167-4fe4-88f8-871ba905ade1.
Pełny tekst źródłaDevita, Marie. "Mesure et dangerosité des métaux nobles pour les photodétecteurs à avalanche à photon unique". Thesis, Strasbourg, 2016. http://www.theses.fr/2016STRAD029/document.
Pełny tekst źródłaNoble metals (Au, Ag, Pt, Ir, Pd and Ru) are used for the fabrication of microelectronics devices or can be brought by manufacturing tools (alloy components for example). It is well known that these impurities are detrimental to the efficiency of the devices. This implies a real and present need for control of their introduction in clean rooms to diagnose as soon as possible a contamination. Yet, there are no industrial technique for their follow-up at levels about 5.109 at.cm-2 - ITRS recommendations. The relevance of these recommendations according to the electronic device (SPAD in particular) could be questioned. At first, this study consisted in developing a physicochemical technique for the analysis of noble metals on Si wafers by VPD-DC-ICPMS. Then, their dangerousness towards tools and devices was established according to their behavior in temperature and the DCR generated on SPAD devices
Części książek na temat "Diode à avalanche à photon unique"
Davis, Lloyd M., i Li-Qiang Li. "Ultrasensitive Sub-Nanosecond Time-Gated Detection Using a Single Photon Avalanche Diode". W Applications of Photonic Technology, 483–88. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4757-9247-8_92.
Pełny tekst źródłaNiclass, Cristiano, Maximilian Sergio i Edoardo Charbon. "A Single Photon Avalanche Diode Array Fabricated in Deep-Submicron CMOS Technology". W Design, Automation, and Test in Europe, 401–13. Dordrecht: Springer Netherlands, 2008. http://dx.doi.org/10.1007/978-1-4020-6488-3_29.
Pełny tekst źródłaChu, Tong, Guilan Feng, Tianqi Zhao i Chunlan Lin. "Research Progress of Single Photon Avalanche Diode with Low Dark Count Rate". W Lecture Notes in Electrical Engineering, 1–9. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-33-4110-4_1.
Pełny tekst źródłaZheng, Jiyuan, Shaoliang Yu, Jiamin Wu, Yuyan Wang, Chenchen Deng i Zhu Lin. "A Novel In-Sensor Computing Architecture Based on Single Photon Avalanche Diode and Dynamic Memristor". W Artificial Intelligence, 489–500. Cham: Springer Nature Switzerland, 2022. http://dx.doi.org/10.1007/978-3-031-20503-3_39.
Pełny tekst źródłaDurini, Daniel, Uwe Paschen, Werner Brockherde i Bedrich J. Hosticka. "Silicon based single-photon avalanche diode technology for low-light and high-speed applications". W Photodetectors, 37–71. Elsevier, 2023. http://dx.doi.org/10.1016/b978-0-08-102795-0.00002-5.
Pełny tekst źródłaDurini, Daniel, Uwe Paschen, Alexander Schwinger i Andreas Spickermann. "Silicon based single-photon avalanche diode (SPAD) technology for low-light and high-speed applications". W Photodetectors, 345–71. Elsevier, 2016. http://dx.doi.org/10.1016/b978-1-78242-445-1.00011-7.
Pełny tekst źródłaStreszczenia konferencji na temat "Diode à avalanche à photon unique"
Louis, Thomas A. "Investigation of Picosecond Time-Resolved Photoluminescence in Gallium Arsenide with 3-μm Spatial Resolution". W Picosecond Electronics and Optoelectronics. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/peo.1989.hsmt39.
Pełny tekst źródłaZappa, Franco, Simone Tisa, Sergio Cova, Piera Maccagnani, Domenico Bonaccini Calia, Giovanni Bonanno, Massimiliano Belluso, Roberto Saletti i Roberto Roncella. "Pushing technologies: single-photon avalanche diode arrays". W SPIE Astronomical Telescopes + Instrumentation. SPIE, 2004. http://dx.doi.org/10.1117/12.552940.
Pełny tekst źródłaZang, Kai, Xun Ding, Xiao Jiang, Yijie Huo, Matthew Morea, Xiaochi Chen, Ching-Ying Lu i in. "Surface textured silicon single-photon avalanche diode". W CLEO: Science and Innovations. Washington, D.C.: OSA, 2017. http://dx.doi.org/10.1364/cleo_si.2017.sm3k.2.
Pełny tekst źródłaHuang, Dong, Rong-xia Zhu, Si-yang Liu, Wei-feng Sun, Jin Wu i De-jun Ma. "SPICE modeling for single photon avalanche diode". W ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, redaktorzy Jun Ohta, Nanjian Wu i Binqiao Li. SPIE, 2013. http://dx.doi.org/10.1117/12.2032040.
Pełny tekst źródłaHan, Song, Jian Zhang i Jie Song. "SSK Modulation with Single Photon Avalanche Diode". W 2016 4th International Conference on Machinery, Materials and Information Technology Applications. Paris, France: Atlantis Press, 2016. http://dx.doi.org/10.2991/icmmita-16.2016.34.
Pełny tekst źródłaNiclass, Cristiano, Marek Gersbach, Robert Henderson, Lindsay Grant i Edoardo Charbon. "A 130-nm CMOS single-photon avalanche diode". W Optics East 2007, redaktorzy Joachim Piprek i Jian J. Wang. SPIE, 2007. http://dx.doi.org/10.1117/12.728878.
Pełny tekst źródłaRech, Ivan, Angelo Gulinatti, Franco Zappa, Massimo Ghioni i Sergio Cova. "High-performance silicon single-photon avalanche diode array". W SPIE Defense, Security, and Sensing, redaktorzy Mark A. Itzler i Joe C. Campbell. SPIE, 2009. http://dx.doi.org/10.1117/12.818516.
Pełny tekst źródłaScandiuzzo, M., D. Stoppa, A. Simoni, L. Pancheri i G. F. Dalla Betta. "CMOS SINGLE PHOTON AVALANCHE DIODE FOR IMAGING APPLICATIONS". W Proceedings of the 11th Italian Conference. WORLD SCIENTIFIC, 2008. http://dx.doi.org/10.1142/9789812793393_0046.
Pełny tekst źródłaDhouib, Hatem, Amel Neifar, Abdessattar Bouzid i Mohamed Masmoudi. "Study of a Single-Photon Avalanche Diode Models". W 2020 IEEE International Conference on Design & Test of Integrated Micro & Nano-Systems (DTS). IEEE, 2020. http://dx.doi.org/10.1109/dts48731.2020.9196074.
Pełny tekst źródłaRink, S., V. Quenette, J. R. Manouvrier, A. Juge, G. Gouget, D. Rideau, R. A. Bianchi i in. "A self-sustaining Single Photon Avalanche Diode Model". W ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC). IEEE, 2022. http://dx.doi.org/10.1109/essderc55479.2022.9947120.
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