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Spitsyn, Alexey B. "Crystallization of diamond and diamond-like nitride films from gas phase /". free to MU campus, to others for purchase, 2003. http://wwwlib.umi.com/cr/mo/fullcit?p3099640.
Pełny tekst źródłaAgahi, Maryam. "Grinding polycrystalline diamond using a diamond grinding wheel". Access electronically, 2006. http://www.library.uow.edu.au/adt-NWU/public/adt-NWU20061114.150854/index.html.
Pełny tekst źródłaNewson, Pamela Lynn. "Studies of diamond film formation". Diss., Georgia Institute of Technology, 1997. http://hdl.handle.net/1853/30529.
Pełny tekst źródłaPham, Thanh-Toan. "Mastering the O-diamond/Al2O3 interface for unipolar boron doped diamond field effect transistor". Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAT051/document.
Pełny tekst źródłaNowadays, global warming effect is one of most challenging issue for human being. Most of “traditional energy” sources like thermal power; nuclear power, hydroelectricity power, etc. are dangerous and/or potentially dangerous for nature and human being. Therefore, the "greener energy" is highly desired. The "greener energy" has two folds meaning: on one hand, using renewable energy sources like solar power, wind power or geothermal energy, etc. instead of the traditional energy sources. One another hand, use the electricity more effectively and more efficiency. A recent report has pointed out that the energy loss in US is in fact more than sum of all renewable energy generate in US. Therefore, effectively utilizing electricity and limiting the waste is critical.Unfortunately, losses are the endemic of semiconductor components, the central device of all power conversion system. Silicon (Si), the main material for semiconductor components has reached its physical limit. Wide band-gap semiconductors such as SiC, GaN, Ga2O3 and diamond are promising materials to fabricate the devices low ON-state loss and high OFF-state breakdown voltage. Among them, diamond is an ideal semiconductor for power devices due to its superior physical properties. Recent progresses on diamond technology permits one consider the diamond power devices, e.g. MOSFET.In order to realize a diamond MOSFET by controlled diamond semiconductor, the numbers of issues needed to be overcome is important, especially mastering the diamond/oxide interface. In this context, G. Chicot and A. Marechal (former PhD students in our group) has introduced the O-diamond/Al2O3 MOSCAP test devices and measured the type I band alignment at O-diamond/Al2O3 interface, which is favorable to realize both inversion MOSFET and depletion MOSFET in his PhD these. This PhD project is a continuation of two-mentioned thesis and including two main objects: 1. Fundamental investigations dedicate to understand the electrical characteristic of an O-diamond MOSCAP test device; 2. Realize a unipolar diamond MOSFET by controlling the diamond semiconductor epilayer. The thesis will include three chapters:Chapter 1 discusses the context of power devices as well as the physical properties of diamond and state-of-the-art of diamond devices. We also introduce the working principle of an ideal MOSCAP test device and States-of-the-art of O-diamond MOSCAP test devices.Chapter 2 dedicates for the fundamental understanding O-diamond MOSCAP and include three main parts: Part 1 addresses the methodology issues related to diamond growth, fabrication processing and electrical characterizations. We will construct an empirical electrostatics model for O-diamond MOSCAP. Part 2 discusses the origin of leakage current and capacitance-frequency dependent when O-diamond MOSCAP is biasing in negative direction. We quantify the interface states density at O-diamond/Al2O3 interface by conductance method and the complete electrostatics model for O-diamond/Al2O3 MOSCAP will be constructed. Part 3 discusses the origin of leakage current and the capacitance-frequency dependent when the O-diamond MOS capacitor is biasing in positive direction.Chapter 3 introduces our approach to realize a depletion mode diamond MOSFET. Transistor performance and the important parameters of the transistor will be quantified. The benchmark of the device and the projection towards its improvement will be mentioned
Crudele, Marc. "Implementation of a fast tool servo with repetitive control for diamond turning". Thesis, Georgia Institute of Technology, 1999. http://hdl.handle.net/1853/17333.
Pełny tekst źródłaTraoré, Aboulaye. "High power diamond Schottky diode". Thesis, Grenoble, 2014. http://www.theses.fr/2014GRENT093/document.
Pełny tekst źródłaThis thesis was focused on high power diamond Schottky diodes fabrication. Diamond growth and its doping are today well mastered. The advent of vertical architectures (diode active layer grown on heavily doped diamond substrate) and pseudo-vertical (stack of diode active layer and heavily doped layer grown on insulating substrate) allowed minimizing the high serial resistance, which was induced by the high ionization energy of acceptor-type dopants (boron doped diamond) preferably used in rectifiers fabrications.Besides these geometrical configurations favoring high forward currents, diamond Schottky diodes (pseudo vertical or vertical structures) were limited by: I) the quality of diode active layer altered by defects propagation from heavily doped layer thus leading to lower blocking voltage (maximum critical field of 3 MV/cm reported) than the theoretical values (theoretical values of critical field of 10 MV/cm), II) Schottky electrodes selected and the thermal and chemical stability of interfaces formed with oxygen-terminated diamond surface (required getting a Schottky contact and reducing as much as possible the interface states). Schottky metal selection and diamond surface pretreatment are crucial to get low barrier heights (low forward voltage drop and so low losses), low defects density at interfaces (low leakage current), and a thermally stable interface (high operating temperature). In this thesis, we demonstrated that a pseudo vertical diamond Schottky diode based on an oxygen-terminated surface covered by an easily oxidizable metal like zirconium (Zr) combined with an optimal heavily doped layer, allows overcoming these limitations. We first found a trade-off between the thickness of heavily doped layer and its doping level in order to minimize defects generations and thus improve the quality of diode active layer grown on the heavily doped layer (Less defects propagations). On a second hand, the Zr metallic electrodes selected gave rise to a thin zirconia interface layer which was thermally stable thus preventing the oxygen layer desorption. Zr/oxidized diamond rectifiers exhibited better features than the current state of art: a high forward current density (1000 A/cm2 at 6 V), a high critical field above 7 MV/cm (1000 V blocking voltage with a leakage current less than 1 pA), a Baliga's power figure of merit above 244 MW/cm2 (the highest value reported), a good reproducibility regardless of diodes and samples, the possibility to get a barrier heights below 1 eV by annealing, and a thermal stability higher than 500°C
Ma, Kwok Leung. "Nitrogen incorporation in nanocrystalline diamond thin films /". access abstract and table of contents access full-text, 2006. http://libweb.cityu.edu.hk/cgi-bin/ezdb/thesis.pl?mphil-ap-b21471538a.pdf.
Pełny tekst źródła"Submitted to Department of Physics and Materials Science in partial fulfillment of the requirements for the degree of Master of Philosophy" Includes bibliographical references.
Hannon, Camille. "Geotectonic controls on primary diamond deposits : a review of exploration criteria". Thesis, Rhodes University, 2013. http://hdl.handle.net/10962/d1007810.
Pełny tekst źródłaKMBT_363
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Whitehead, Kerryn. "A geochemical study of diamonds from Cullinan diamond mine, South Africa". Master's thesis, University of Cape Town, 2005. http://hdl.handle.net/11427/4231.
Pełny tekst źródłaThe Cullinan kimberlite is a Group I kimberlite and is located in the northeastern region of the Kaapvaal Craton, South Africa. The kimberlite pipe has been dated at 1180 ± 30 Ma and intrudes the Bushveld Igneous Complex (2.05 Ga). This study explores the geochemistry of a suite of one hundred selected diamonds and their associated mineral inclusions. The majority of the diamonds described here are peridotitic (94%) and the remainder are eclogitic. The peridotic inclusions may be further subdivided into harzburgitic and lherzolitic parageneses.
Chen, Yu-Chun Wilamowski Bogdan M. Tzeng Y. "Diamond chemical vapor deposition and practical applications". Auburn, Ala., 2009. http://hdl.handle.net/10415/1774.
Pełny tekst źródłaWang, Hao. "Surface and electrochemical studies of CVD diamond thin films". Thesis, University of Oxford, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.670126.
Pełny tekst źródłaĆmiel, Milan. "VÝVOJ NÁSTROJŮ S PKD, CVD VRSTVOU A CVD POVLAKEM PRO DOKONČOVÁNÍ DĚR". Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2009. http://www.nusl.cz/ntk/nusl-228661.
Pełny tekst źródłaMaréchal, Aurélien. "Metal-oxide-semiconductor capacitor for diamond transistor : simulation, fabrication and electrical analysis". Thesis, Université Grenoble Alpes (ComUE), 2015. http://www.theses.fr/2015GREAT094/document.
Pełny tekst źródłaOver two decades of technological progresses in growth quality, doping control and device processing have led to the emergence of new potentialities for power electronic applications. As diamond represents the ultimate semiconductor owing to its superior physical properties, efforts have been conducted to develop various electronic devices, such as Schottky diodes, field effect transistors, bipolar transistor, p-i-n junctions...As a prerequisite to the development of new generation diamond power devices, on one side, is the development of simulation tools able to anticipate the device electrical properties as well as its architecture in order to take full advantage of the material physical properties. On the other hand, experimental study of the gate contact, the second building block of the transistor, is fundamental in order to develop high performance devices. In this regard, one can consider several open questions: (i) Are the simulation tools able to take into account the specificities of diamond to model electrical devices? (ii) Is the aluminum oxide suitable to develop a MOSFET gate contact? (iii) If so, is the oxide/diamond interface of good enough quality? (iv) Is the fabrication of a diamond MOSFET a technological issue?This PhD project, attend to answer these questions and pave the way towards the inversion mode MOSFET.Emphasize on the diamond physical properties will help to understand why this material is the ultimate WBG semiconductor. State of the art diamond devices will be presented focusing on field effect transistors. A complementary topic for the development of new generation diamond power device is the anticipation of device electrical properties and architecture through finite element base simulation software. Thus the need for reliable simulation tools will be presented.On one hand, the main models implemented in the simulation tools will be presented and emphasize on the diamond electrical properties will be given. For the simulation of diamond metal-oxide-semiconductor field effect transistor (MOSFET), the study of two building blocks is required: the p-n junction and the gate contact. The later ideal properties will be presented while the former will serve as a basis for the calibration of the physical parameters implemented in the finite element based software. Generation-recombination models influence on the simulated p-n junction electrical properties will be discussed. Finally, the simulation of the electrical properties of a diamond metal-oxide-semiconductor field effect transistor (MOSFET) will be shown.On the other hand, focus will be made on diamond metal-oxide-semiconductor capacitor (MOSCAP) fabrication and electrical characterization. Specifically, the interfacial band configuration of the Al2O3/oxygen-terminated diamond (O-diamond) has been investigated using X-ray photoelectron spectroscopy. The results allowed establishing the band diagram of the Al2O3/O-diamond heterostructure. Then, the electrical properties of the diamond MOSCAP will be shown. Specifically, investigation of the interface states density revealed the pinning of the Fermi level at the interface between the Al2O3 and the O-diamond. Moreover, the leakage currents through the Al2O3 layer will be discussed in terms of temperature dependent trap assisted tunneling of holes from the diamond layer to the top gate contact. Finally, the electrical characterization of the first diamond MOSFET, performed at the National Institute for Advanced Industrial Science and Technology (AIST) in Japan, will be presented. Even if this first attempt was unsuccessful, it is promising for the development of diamond MOSFET since the demonstration of the actual realization of the device is clearly established
Zbrzezny, Adam. "Incorporation of Mo into CVD diamond for diamond composite engineering". Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1999. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape11/PQDD_0006/MQ42256.pdf.
Pełny tekst źródłaSamuels, B. "An investigation of the friction of diamond sliding on diamond". Thesis, University of Oxford, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.379995.
Pełny tekst źródłaLee, Choon-Heung. "Theoretical study of diamond-like carbons and nucleation of diamond". Case Western Reserve University School of Graduate Studies / OhioLINK, 1993. http://rave.ohiolink.edu/etdc/view?acc_num=case1060349568.
Pełny tekst źródłaKilin, S. Ya, J. Wrachtrup i kilin@ifanbel bas-net by. "Diamond Quantum Computer". ESI preprints, 2000. ftp://ftp.esi.ac.at/pub/Preprints/esi950.ps.
Pełny tekst źródłaHausmann, Birgit Judith Maria. "Nanophotonics in Diamond". Thesis, Harvard University, 2013. http://dissertations.umi.com/gsas.harvard:11045.
Pełny tekst źródłaEngineering and Applied Sciences
Zhao, F. "Graphene-diamond heterostructures". Thesis, University College London (University of London), 2015. http://discovery.ucl.ac.uk/1462910/.
Pełny tekst źródłaHofstetter, Vanessa J. "America's diamond mind :". See restrictions on access, 2002. http://www.baseballhalloffame.org/library/abner/apponly.htm.
Pełny tekst źródłaPeng, Xilin. "Synthesis and adhesion of diamond and diamond-like carbon (DLC) films". Thesis, University of Cambridge, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.624958.
Pełny tekst źródłaFreeman, Mathieu Jon. "Synthesizing diamond films from low pressure chemical vapor deposition /". Online version of thesis, 1990. http://hdl.handle.net/1850/11262.
Pełny tekst źródłaCharyshkin, Eugene V. "New methods of diamond and diamondlike films deposition". Thesis, Queensland University of Technology, 1996.
Znajdź pełny tekst źródłaGottimukkala, Roja. "Growth and characterization of diamond and diamond like carbon films with interlayer". [Tampa, Fla] : University of South Florida, 2005. http://purl.fcla.edu/usf/dc/et/SFE0001405.
Pełny tekst źródłaTong, Zhen. "A systematic research on diamond turning using nanoscale multi-tip diamond tools". Thesis, University of Strathclyde, 2015. http://oleg.lib.strath.ac.uk:80/R/?func=dbin-jump-full&object_id=24741.
Pełny tekst źródłaBrezeanu, Mihai. "Diamond Schottky barrier diodes". Thesis, University of Cambridge, 2008. https://www.repository.cam.ac.uk/handle/1810/226757.
Pełny tekst źródłaYu, Zhiming. "Metastable growth of diamond /". Stockholm : Tekniska högsk, 1998. http://www.lib.kth.se/abs98/yu1218.pdf.
Pełny tekst źródłaBrookes, Jill. "The plasticity of diamond". Thesis, University of Hull, 1992. http://hydra.hull.ac.uk/resources/hull:6745.
Pełny tekst źródłaLatto, Matthew Neil. "The electrochemistry of diamond". Thesis, University of Bristol, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.247232.
Pełny tekst źródłaHird, Jonathan R. "The polishing of diamond". Thesis, University of Cambridge, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.275384.
Pełny tekst źródłaZaayman, Edward. "The fracture of diamond". Thesis, University of Cambridge, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.613297.
Pełny tekst źródłaFan, Qi Hua. "Diamond growth on metals". Doctoral thesis, Universidade de Aveiro, 1998. http://hdl.handle.net/10773/17345.
Pełny tekst źródłaThis work studies diamond growth on copper by microwave plasma chemicalvapour- deposition (MPCVD). Diamond nucleation and growth characteristics are the essential aspects in CVD process. We show that the substrate pre-treatment influences strongly the diamond nucleation. The diamond quality and growth characteristics are mainly controlled by the deposition conditions. In practical applications CVD diamonds fall into two main forms. One is freestanding films and another is adherent coatings on different materials. Copper is a promising substrate material for preparing free-standing diamond films because of its non-carbon affinity. However, the large mismatch in thermal expansion between the diamond and copper usually leads to the film cracking during the post cooling procedure. In order to overcome this problem we develop a two-step growth method which consists of two growth stages. In the first stage a short deposition is performed for obtaining a sufficient but non-continuous nucleation. Then a quick ramp down in plasma power and temperature releases the diamond crystals from their trapped positions. In the second stage a normal deposition is performed for obtaining continuous diamond films of desired quality. No cracking in the film happens during the post cooling procedure after the second deposition. On the other hand, many applications require sufficient adhesion of diamond coating to the substrate. Since direct deposition of diamond on copper yields no adhesion, we propose using an interlayer which can provide adequate adhesion to both the copper substrate and the diamond film. The diffusion behaviour of carbon and copper in different refractory materials as well as their carbide bond strength is considered in order to find a suitable interlayer material. It is shown that titanium is one of the promising candidates. Adherent diamond coatings on copper are obtained using a titanium buffer layer of 0.2-5 pm thick. The electrical conductivity of the diamond films show a strong and controllable dependence on the deposition conditions. Selective deposition of diamond on the Tilcopper are demonstrated. In addition, adherent diamond coating on steel is also obtained by using a titanium interlayer. Quantitative evaluation of the adhesion of diamond coatings is a fundamental subject and has been a long standing concern in various of coatings. We show that conventional methods, like adhesion scratch tests, pull-off tests, indentation tests, and micro-Raman spectroscopy, usually can not give quantitative results when examining the diamond coatings. Therefore, we develop two new methods, trying to solve this problem. The first one is a thermal quench combined with micro-Raman spectroscopy method and the second is a micro-indentation test based model. In the thermal quench method the diamond coatings on TiICu substrate are quenched from room temperature to lower temperatures. The critical temperature at which the film detaches is revealed by the shift of the diamond Raman line to the stress-free value of 1332 cm-'. The coating adhesion is considered to be equivalent to the thermal stress induced by the quench and can be quantitatively calculated from the thermal and mechanical properties of the substrate and the diamond. For the diamond coatings on Tilcopper, this method reveals an adherence of approx. 2.42 GPa. The micro-indentation model is based on the experimental evidence that small indentation load always causes round spallation in the diamond films whatever the shape of the indenter is. An exponential sink-in deformation of the coating under the indentation is proposed (y = -a;bexp(-bx)). The deformation stress at the spallation edge is considered the coating adhesion. The modeled adhesion of the diamond coatings on copper is about 1.921-1.956 GPa, which is in agreement with the thermal quench results. The validity of this model is also verified by its self-consistence. Residual stress is an essential aspect determining the reliability of diamond coatings. We find experimentally that the increase in the film thickness leads to a shift of the diamond Rarnan line from higher wave numbers to 1332 cm-'. A linear relationship between the film thickness and the in-plane stress is observed and a theoretical model is developed to interpret the results. This decrease in stress along the film thickness is usually not taken into account in other stress measurement techniques, like substrate curvature, X-ray diffraction etc. The most important mechanical properties, namely the hardness and wear resistance, of the diamond coatings on copper are investigated. The coating hardness is modeled by considering the coatinglsubstrate a composite material. Tribological tests show a high wear resistance of the diamond coatings. The friction coefficient is found to be proportional to both the wear load and the diamond grain size.
O presente trabalho foi dedicado ao estudo do crescimento de filmes de diamante em substractos de cobre, utilizando, para o efeito, a técnica de Deposição Química na Fase de Vapor Assistido por Micro-Ondas (MPCVD). Foi demonstrado que o processo de nucleação depende sobremaneira do pré-tratamento do substracto enquanto que a qualidade dos filmes e o modo de crescimento são controlados, essencialmente, pelas condições de deposição. De acordo com a aplicação prática a que se destinam, os filmes de diamante podem apresentar-se sob duas formas distintas: filmes livres (free-standing) ou filmes aderentes a outros materiais. No que concerne a preparação de filmes livres, o cobre é geralmente apontado como um substracto promissor, devido à sua não afinidade para com o carbono. Contudo, os valores dos coeficientes de expansão térmica do cobre e do diamante divergem significativamente, conduzindo geralmente à rotura do filme durante o processo de arrefecimento. A fim de ultrapassar este problema foi desenvolvido um processo de crescimento em duas etapas. Na primeira etapa, efectua-se uma deposição de curta duração conducente à obtenção duma nucleação forte e um decréscimo da temperatura e da potência do plasma para libertar os grãos de diamante das suas posições no cobre. Na segunda etapa, procede-se a uma deposição normal para obtenção dum filme continuo e com a qualidade desejada. Nestas condições verificou-se não ocorrer rotura do filme durante o mefecimento. Por outo lado, existem várias aplicações industriais para as quais é requerida uma forte adesão do diamante ao substracto. Sendo conhecido, à priori, que a deposição directa não constituia solução tecnológica viável, foi proposta a introdução de uma camada intermédia com capacidade de aderir tanto ao cobre como ao diamante. Aselecção do material respectivo baseou-se em estudos da difusão do carbono e do cobre em diversos materiais refractários e da energia de formação de carboretos. Neste âmbito constatou-se ser o titânio o material adequado. De facto, os testes efectuados permitiram obter filmes de diamante aderentes usando uma camada intermédia de titânio com 0,2-5 pm de espessura. A condutividade eléctrica dos filmes de diamante é fortemente dependente das condições de deposição que, por seu turno, podem ser devidamente controladas. Deste modo, é possível efectuar uma deposição selectiva de TiICu. Na sequência deste estudo foi também demonstrado ser possível alargar o campo de utilização desta tecnologia a substractos de aço. A análise quantitativa da adesão de filmes é um tema de grande actualidade, fundamentalmente na área dos revestimentos. No caso dos filmes de diamante, tal problema assume ainda maior dimensão uma vez que os métodos convencionais de análise tais como os testes scratch, descolamento, indentação e espectroscopia Raman não permitem a obtenção de resultados fiáveis. Tendo em atenção tais limitações, foram desenvolvidos dois métodos conducentes à avaliação quantitativa da adesão. O primeiro baseou-se na combinação entre um arrefecimento rápido e os espectros de Raman; O segundo baseou-se em testes de micro-indentação. A metodologia do primeiro método pressupõe o arrefecimento de filmes crescidos em TiICu até uma temperatura crítica, abaixo da temperatura ambiente, após a qual ocorre o descolamento do filme. Tal fenómeno é caracterizado por um desvio do pico de Raman relativamente ao obtido em amostras isentas de tensão e cujo valor é de 1332 cm-I. Isto é, considera-se a adesão equivalente à tensão induzida pelo arrefecimento, podendo o cálculo ser efectuado a partir das propriedades térmicas e mecânicas do substracto e do filme. Para os filmes crescidos em TiICu obteve-se uma aderência de 2,42 GPa. O segundo modelo baseia-se em testes de indentação, nomeadamente na evidência experimental que a região do filme que se encontra em redor do indentador descola do substracto. Tal fenómeno resulta do facto da tensão instalada ser superior à adesão. Em resultado do processo de indentação a zona do filme descolada, apresenta uma deformação que é máxima no ponto de indentação. Para caracterizar tal gradiente de deformação proposemos uma lei exponencial do tipo y =-a"exp(-bx). Através do conhecimento do valor de deformação na fronteira da zona descolada foi possível calcular o valor da tensão correspondente tendo como base as características elásticas do diamante. Esta tensão foi considerada equivalente à adesão tendo-se obtido um valor de 1,921-1,956 GPa, isto é um valor semelhante ao obtido pelo método de arrefecimento rápido. A tensão residual é um factor essencial que determina a fiabilidade dos filmes de diamante. Verificou-se experimentalmente que com o aumento da espessura dos filmes a linha de Raman do diamante aproxima-se da linha tipica de filmes isentos de tensões. Foi também detectada a existência duma relação linear entre a espessura do filme e a tensão equivalente, tendo sido desenvolvido um modelo teórico para explicar os resultados. Deve salientar-se que a diminuição da tensão com o aumento da espessura do filme não é tida geralmente em consideração, nomeadamente quando se utilizam outras técnicas de medição da tensão tais como a curvatura do substracto e a difracção de raios X. Finalmente, foi efectuado o estudo de duas propriedades mecânicas fundamentais do filme, a saber a dureza e o desgaste. A dureza foi modelada considerando o filme/subs~,actoc omo um material compósito. Os testes tribológicos mostraram que os filmes apresentam uma elevada resistência ao desgaste sendo o coeficiente de atrito proporcional à carga de desgaste e ao tamanho de grão do diamante.
Von, Euw Michelle Helene. "Daughters of the diamond". College Park, Md. : University of Maryland, 2005. http://hdl.handle.net/1903/2510.
Pełny tekst źródłaThesis research directed by: Dept of English. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.
Chen, Cong. "Diamond-free partial orders". Thesis, University of Leeds, 2014. http://etheses.whiterose.ac.uk/7453/.
Pełny tekst źródłaXu, Jingyao. "Optimization of the use of diamond indicator minerals in diamond exploration in kimberlites". Doctoral thesis, Universitat de Barcelona, 2019. http://hdl.handle.net/10803/668786.
Pełny tekst źródłaChoudhury, Sneha [Verfasser]. "Towards Diamond-Based Photocatalysts : Spectroscopic Investigations at the Diamond-Water Interface / Sneha Choudhury". Berlin : Freie Universität Berlin, 2020. http://d-nb.info/1202463924/34.
Pełny tekst źródłaWillett, Thomas M. (Thomas Michael). "Cryotribology of diamond film-coated silicon disks against metals, ceramics, and natural diamond". Thesis, Massachusetts Institute of Technology, 1995. http://hdl.handle.net/1721.1/36316.
Pełny tekst źródłaJamonneau, Pierre. "Vers le développement de technologies quantiques à base de spins nucléaires dans le diamant". Thesis, Université Paris-Saclay (ComUE), 2016. http://www.theses.fr/2016SACLN052/document.
Pełny tekst źródłaAt a time where processing and exchanging big sets of data is one of the main challenge of our society, the development of technologies related to information based on the principles of quantum physics offer interesting new perspectives. This thesis is within the context of the emergence of new quantum technologies based on artificial atoms. We are particularly interested in the opportunities offered by single nuclear spins in diamond. The beginning of this thesis introduces the properties of the NV coloured center of diamond. In particular, we explain how the NV defect electronic spin can be used to detect nuclear spins dispersed in the diamond matrix. By making use, the anisotropic nature of the hyperfine interaction between the NV electron spin and 13C nuclear spins, we demonstrate nuclear spin initialization close to the nuclear spin levels anti-crossing. The specific structure of the spin system’s energy levels enables us to revisit the phenomenon of coherent population trapping with a single nuclear spin at room temperature. Finally, in the aim of developing new technologies based on this spin system, we describe the beginning of a project going towards the implementation of the micro-wave detection of a single electronic spin in diamond. This project is aiming to get rid of the optical illumination which is the main source of decoherence of the nuclear spin quantum state in diamond. The results obtained in this thesis about the control of spin systems in diamond, can be combined with the development of hybrid quantum systems. Thus, the combination of the long coherence time of nuclear spins with the computing performances of superconducting qu-bits is a promising development of quantum information technology
Japp, Stephen Glen. "Synthetic industrial diamond : a technological outlook". Doctoral thesis, University of Cape Town, 1997. http://hdl.handle.net/11427/17170.
Pełny tekst źródłaBibliography: pages 102-118.
Synthetic diamonds are successfully substituting for natural diamonds in the area of industrial application. Synthetic diamonds increased their market share from 10% in 1960 to 50% in 1968 and to 90% in 1994. The success of synthetic diamonds may be ascribed largely to technological advance in the area of diamond manufacture. Two technologies in particular contributed to this advance: (i) High pressure and high temperature (HPHT) processes for crystallising carbon material and (ii) chemical vapour deposition (CVD) of these materials. The substitution of synthetic for natural diamond occurred in a systematic and predictable manner. Further technological advance could threaten the concept of diamond as a unique and desirable substance in the minds of the consumers and may require the repositioning of its image.
Henderson, John C. "The Crater of Diamonds: A History of the Pike County, Arkansas, Diamond Field, 1906-1972". Thesis, University of North Texas, 2002. https://digital.library.unt.edu/ark:/67531/metadc3088/.
Pełny tekst źródłaVadali, Venkata Satya Siva Srikanth. "Deposition and characterization of nanocrystalline diamond/[beta]-SiC [diamond beta SiC] composite film system". Aachen Shaker, 2008. http://d-nb.info/990485188/04.
Pełny tekst źródłaMajdi, Saman. "Electronic Characterization of CVD Diamond". Licentiate thesis, Uppsala University, Electricity, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-116433.
Pełny tekst źródłaDiamond is a promising material for high-power, high-frequency and hightemperatureelectronics applications, where its outstanding physical propertiescan be fully exploited. It exhibits an extremely high energy gap, veryhigh carrier mobilities, high breakdown field strength, and the highest thermalconductivity of any wide bandgap material. It could therefore producethe fastest switching, the highest power density, and the most efficient electronicdevices obtainable, with applications in the RF power, automotive andaerospace industries. Lightweight diamond devices, capable of high temperatureoperation in harsh environments, could also be used in radiationdetectors and particle physics applications where no other semiconductordevices would survive.The high defect and impurity concentration in natural diamond or polycrystallinehigh-pressure-high-temperature (HPHT) diamond substrates hasmade it difficult to establish reliable results when studying the electronicproperties of diamond. However, recent progress in the growth of high puritySingle-Crystal Chemical Vapor Deposited Diamond (SC-CVD) has openedthe perspective of applications under such extreme conditions based on thistype of artificial diamond.Despite the improvements, there are still many questions which must beanswered. This work will focus on electrical characterization of (SC-CVD)diamond by different measurements techniques such as internal photoemission,I-V, C-V, Hall and in particular, time-of-flight (TOF) carrier driftvelocity measurements. With the mentioned techniques, some importantproperties of diamond such as drift mobilities, lateral carrier transit velocities,compensation ratio and Schottky barrier heights have been investigated.Low compensation ratios (ND/NA) < 10-4 have been achieved in boron-dopeddiamond and a drift mobility of about 860 cm2 / V for the hole transit nearthe surface in a lateral TOF configuration could be measured.
Van, Bouwelen Franciscus Maria. "Mechanically induced degradation of diamond". Thesis, University of Cambridge, 1996. https://www.repository.cam.ac.uk/handle/1810/251599.
Pełny tekst źródłaChen, Zhong. "Microstructural engineering of diamond film". Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1999. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape11/PQDD_0001/MQ42237.pdf.
Pełny tekst źródłaMiller, Tad W. "Modified intermetallic-bonded diamond composites /". Available to subscribers only, 2006. http://proquest.umi.com/pqdweb?did=1136092311&sid=16&Fmt=2&clientId=1509&RQT=309&VName=PQD.
Pełny tekst źródła"Department of Mechanical Engineering and Energy Processes." Includes bibliographical references (leaves 99-102). Also available online.
Bruley, John. "Analytical electron microscopy of diamond". Thesis, University of Cambridge, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.237560.
Pełny tekst źródłaHoward, Alexander Sinclair. "Diamond detectors for particle physics". Thesis, Imperial College London, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.300575.
Pełny tekst źródłaCox, A. "Magnetic resonance measurements on diamond". Thesis, University of Oxford, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.358599.
Pełny tekst źródłaMullan, Claire. "Shape analysis of synthetic diamond". Thesis, Loughborough University, 1997. https://dspace.lboro.ac.uk/2134/10841.
Pełny tekst źródłaJarvis, M. R. "A theoretical study of diamond". Thesis, University of Cambridge, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.605069.
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