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Artykuły w czasopismach na temat "Density Evolution (DE)"
Pang, Xiaoyan, Chen Feng i Xinying Zhao. "Evolution of spin density vectors in a strongly focused composite field". Chinese Optics Letters 19, nr 2 (2021): 022601. http://dx.doi.org/10.3788/col202119.022601.
Pełny tekst źródłaSeppänen, Anne, i Kalle Parvinen. "Evolution of Density-Dependent Cooperation". Bulletin of Mathematical Biology 76, nr 12 (12.09.2014): 3070–87. http://dx.doi.org/10.1007/s11538-014-9994-y.
Pełny tekst źródłaHeuser, P., i V. Lamzin. "Density modification by directed evolution of electron-density maps". Acta Crystallographica Section A Foundations of Crystallography 64, a1 (23.08.2008): C220. http://dx.doi.org/10.1107/s0108767308092921.
Pełny tekst źródłaWang, C. C., S. R. Kulkarni i H. V. Poor. "Density Evolution for Asymmetric Memoryless Channels". IEEE Transactions on Information Theory 51, nr 12 (grudzień 2005): 4216–36. http://dx.doi.org/10.1109/tit.2005.858931.
Pełny tekst źródłaBrüning, E., i F. Petruccione. "Density Matrices and Their Time Evolution". Open Systems & Information Dynamics 15, nr 02 (czerwiec 2008): 109–21. http://dx.doi.org/10.1142/s1230161208000109.
Pełny tekst źródłaTravis, Justin M. J., David J. Murrell i Calvin Dytham. "The evolution of density–dependent dispersal". Proceedings of the Royal Society of London. Series B: Biological Sciences 266, nr 1431 (22.09.1999): 1837–42. http://dx.doi.org/10.1098/rspb.1999.0854.
Pełny tekst źródłaFisher, Karl B., Michael A. Strauss, Marc Davis, Amos Yahil i John P. Huchra. "The density evolution of IRAS galaxies". Astrophysical Journal 389 (kwiecień 1992): 188. http://dx.doi.org/10.1086/171196.
Pełny tekst źródłaBalitsky, I. I., i A. V. Belitsky. "Nonlinear evolution in high-density QCD". Nuclear Physics B 629, nr 1-3 (maj 2002): 290–322. http://dx.doi.org/10.1016/s0550-3213(02)00149-9.
Pełny tekst źródłaBraun, Mikhail, i Gian Paolo Vacca. "Evolution of the gluon density in". European Physical Journal C 4, nr 1 (1998): 85. http://dx.doi.org/10.1007/s100520050187.
Pełny tekst źródłaMorikawa, Masahiro. "Evolution of the cosmic density matrix". Physical Review D 40, nr 12 (15.12.1989): 4023–27. http://dx.doi.org/10.1103/physrevd.40.4023.
Pełny tekst źródłaRozprawy doktorskie na temat "Density Evolution (DE)"
Jain, Bhuvnesh. "The evolution of cosmological density fluctuations". Thesis, Massachusetts Institute of Technology, 1994. http://hdl.handle.net/1721.1/28060.
Pełny tekst źródłaLumsden, Stuart Leonard. "The statistics and evolution of cosmological density fluctuations". Thesis, University of Edinburgh, 1990. http://hdl.handle.net/1842/28460.
Pełny tekst źródłaDurham, Laura M. (Laura Marie) 1977. "A density evolution analysis of turbo product codes". Thesis, Massachusetts Institute of Technology, 2002. http://hdl.handle.net/1721.1/87208.
Pełny tekst źródłaIncludes bibliographical references (leaves 112-113).
by Laura M. Durham.
S.M.
Arsenlis, Athanasios 1975. "Modeling dislocation density evolution in continuum crystal plasticity". Thesis, Massachusetts Institute of Technology, 2001. http://hdl.handle.net/1721.1/36679.
Pełny tekst źródłaIncludes bibliographical references (p. 221-229).
Dislocations are the singly most important material defects in crystal plasticity, and although dislocation mechanics has long been understood as the underlying physical basis for continuum crystal plasticity formulations, explicit consideration of crystallo- graphic dislocation mechanics has been largely absent in working constitutive models. In light of recent theoretical developments in dislocation dynamics, and the introduc- tion of geometrically necessary dislocation (GND) density in continuum formulations through plastic strain gradients, a single crystal plasticity model based on dislocation density state variables is developed. The density state variables evolve from initial conditions according to equations based on fundamental concepts in dislocation me- chanics such as the conservation of Burgers vector in multiplication and annihilation processes. Along with those processes that account for bulk statistical dislocation evolution, the evolving polarity due to dislocation species flux divergences may be in- cluded to detail the length-scale dependence of mechanical properties on the micron level. The full dislocation density description of plasticity allows a simple evaluation of the role of GND density in non-homogeneously deforming bodies. A local version of the constitutive model, which captures the bulk processes of dislocation multiplication and annihilation during plastic deformation, is implemented within a finite element framework to investigate the poly-slip behavior of aluminum single crystals under tension.
(cont.) A non-local version of the constitutive model using an idealized planar double slip system geometry is implemented within a finite element framework to investigate the length-scale dependence observed in the bending of thin single crystal beams. The results not only capture the mechanical stress/strain response of the material, but also detail the development of underlying dislocation structure responsible_ fr: the plistic behavior of the crystal.
by Athanasios Arsenlis.
Ph.D.
Cross, Nicholas James Geraint. "The bivariate space density of galaxies". Thesis, University of St Andrews, 2002. http://hdl.handle.net/10023/12935.
Pełny tekst źródłaPercival, Will. "Cosmological structure formation and its link to quasar evolution". Thesis, University of Oxford, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.325786.
Pełny tekst źródłaBorch, Andrea. "Evolution of the stellar mass density of galaxies since redshift 1.0". [S.l. : s.n.], 2004. http://deposit.ddb.de/cgi-bin/dokserv?idn=972022481.
Pełny tekst źródłaLane, Jennifer M. (Jennifer Marie) 1977. "A fundamental study of feature evolution during high density plasma etching". Thesis, Massachusetts Institute of Technology, 1999. http://hdl.handle.net/1721.1/80245.
Pełny tekst źródłaIncludes bibliographical references (leaves 91-94).
by Jennifer M. Lane.
M.Eng.and S.B.
Benage, Mary Catherine. "The thermal evolution and dynamics of pyroclasts and pyroclastic density currents". Diss., Georgia Institute of Technology, 2015. http://hdl.handle.net/1853/53962.
Pełny tekst źródłaMahorowala, Arpan P. (Arpan Pravin) 1970. "Feature profile evolution during the high density plasma etching of polysilicon". Thesis, Massachusetts Institute of Technology, 1998. http://hdl.handle.net/1721.1/50514.
Pełny tekst źródłaIncludes bibliographical references (p. 185-191).
This thesis work deals with one of the critical steps in the manufacturing of modem integrated circuits - the plasma etching of thin polysilicon films used to form the metaloxide- semiconductor transistor gate. The etching of very small features (-0.25 jim) in the -2500 A thick films, performed at low operating pressures (-10 mTorr), must be accompanied with minimal etching artifacts that can degrade device performance. This thesis aims to understand the causes for the etching artifacts observed during the etching of polysilicon line-and-space features in C12 and HBr plasmas so that better etching recipes can be developed. The second goal of this work was to develop a generalized simulator capable of predicting the feature profile evolution for the above plasma etching system as well as systems involving other materials and chemistries. The 2V2-dimensional simulator developed used Monte Carlo techniques to compute the transport and surface kinetics combined with a cellular representation of the feature. Using the Monte Carlo algorithm permitted the incorporation of all dominant physical and chemical mechanisms of the etching process such as angle-dependent ionenhanced etching, physical sputtering, ion scattering, surface recombination, plasma deposition, and line-of-sight re-deposition without encountering numerical difficulties. The technique allowed the calculation of surface kinetics rates based on the surface composition; simultaneous composition-dependent etching and deposition could be handled easily. A modification of the cellular representation of the feature was developed to determine neutral species interactions with the surface correctly. A surface normal calculation algorithm involving least-squares fitting of the surface was developed to handle specular ion scattering. Designed sets of plasma etching experiments were performed on photoresist masked and silicon oxide-masked polysilicon samples using C12 and HBr chemistries varying the inductive power (controls the ion density, radical concentrations), the rf biasing power (controls the ion energy) and the gas flowrate (controls the reactant and product concentrations). The interesting features exhibited in the experimental profiles included: 1) the increased sidewall deposition associated with photoresist-masking and isolated features, 2) the greater curvature of the sidewalls associated with the combination of photoresist and Cl2 plasmas, 3) the more vertical sidewalls achieved with HBr, 4) the double faceting of the feature sidewalls under etching conditions accompanied by significant deposition, 5) the delay in the onset of microtrenching at the feature bottom while etching photoresist-masked samples with C12, 6) the greater microtrenching exhibited with silicon oxide-masking and C12 plasmas, and 7) the lack of microtrenching for the HBr etching. The experimental results suggested strong dependencies of microtrenching, tapered sidewall profiles and photoresist-mask faceting on the feature aspect ratio, product formation rate and product residence time in the etching chamber. The etching artifacts were explained using the profile evolution simulator. The microtrenching was associated with two mechanisms - ion scattering from tapered sidewalls and the focussing of directional ions by bowed sidewalls onto the feature bottom. The former mechanism led to trenching initially while the latter mechanism gained importance midway during the etching. The absence of tapered sidewalls initially and the relatively straight sidewall profiles developed during the etching explained the non-occurrence of microtrenches when using HBr. Under processing conditions accompanied by significant deposition, facets at two distinct angles were predicted. The top facet depended on the composition of the material on the photoresist-mask line and its etching angular dependence. The lower facet angle and the polysilicon sidewall profile were governed by the feature aspect ratio, the sticking probabilities and fluxes of the depositing material, and the depositing material etching angular dependence. The phenomenon of feature charging was incorporated in the Monte Carlo simulator to understand its role in the profile evolution. Two electrical approximations were made for the feature - the perfectly insulating and a novel resistive approximation. With an insulating feature, the potential profiles were obtained by determining the space charge on the feature surface and solving Poisson's equation over the entire simulation domain. Calculation of the potential profiles with the resistive feature representation involved treating the feature as a large resistive network, determining the steady-state currents to the feature surface and solving the conductivity equation and Laplace's equation in the solid and gas, respectively. The role surface and bulk conductivities played on the potential profiles were studied. The potential profile in a completely etched polysilicon (conducting) feature with a silicon oxide (insulating) feature bottom was generated. Higher ion currents were calculated at the lower part of the polysilicon sidewall. These currents can etch the passivating material deposited at lower portion of the sidewall enabling spontaneous etching of the sidewall, and cause notching of the sidewall.
by Arpan P. Mahorowala.
Ph.D.
Książki na temat "Density Evolution (DE)"
Losson, Jérôme, Michael C. Mackey, Richard Taylor i Marta Tyran-Kamińska. Density Evolution Under Delayed Dynamics. New York, NY: Springer US, 2020. http://dx.doi.org/10.1007/978-1-0716-1072-5.
Pełny tekst źródłaThermal convection: Patterns, evolution and stability. Chichester, UK: Wiley, 2010.
Znajdź pełny tekst źródłaA, Heelis Rodney, i United States. National Aeronautics and Space Administration., red. Equatorial density irregularity structures at intermediate scales and their temporal evolution. [Washington, DC]: American Geophysical Union, 1998.
Znajdź pełny tekst źródłaLappa, Marcello. Thermal convection: Patterns, evolution, and stability (historical background and current status). Hoboken, N.J: Wiley, 2009.
Znajdź pełny tekst źródłaLappa, Marcello. Thermal convection: Patterns, evolution, and stability (historical background and current status). Hoboken, N.J: Wiley, 2009.
Znajdź pełny tekst źródłaWitting, Lars. A general theory of evolution: By means of selection by density dependent competitive interactions. Århus: Peregrine, 1997.
Znajdź pełny tekst źródłaGordon, Emslie A., Hartmann D. H i United States. National Aeronautics and Space Administration., red. The effects of pure density evolution on the brightness distribution of cosmological gamma-ray bursts. [Washington, D.C: National Aeronautics and Space Administration, 1995.
Znajdź pełny tekst źródłaGordon, Emslie A., Hartmann D. H i United States. National Aeronautics and Space Administration., red. The effects of pure density evolution on the brightness distribution of cosmological gamma-ray bursts. [Washington, D.C: National Aeronautics and Space Administration, 1995.
Znajdź pełny tekst źródłaGordon, Emslie A., Hartmann D. H i United States. National Aeronautics and Space Administration., red. The effects of pure density evolution on the brightness distribution of cosmological gamma-ray bursts. [Washington, D.C: National Aeronautics and Space Administration, 1995.
Znajdź pełny tekst źródłaF, Shandarin Sergei, Weinberg David Hal i United States. National Aeronautics and Space Administration., red. A test of the adhesion approximation for gravitational clustering. [Washington, D.C: National Aeronautics and Space Administration, 1995.
Znajdź pełny tekst źródłaCzęści książek na temat "Density Evolution (DE)"
Graves, Joseph L., i Laurence D. Mueller. "Population density effects on longevity". W Genetics and Evolution of Aging, 119–29. Dordrecht: Springer Netherlands, 1994. http://dx.doi.org/10.1007/978-94-017-1671-0_11.
Pełny tekst źródłaŁokas, Ewa L., i Gary A. Mamon. "Properties of Galaxies with Universal Density Profile". W The Evolution of Galaxies, 477. Dordrecht: Springer Netherlands, 2001. http://dx.doi.org/10.1007/978-94-017-3313-7_121.
Pełny tekst źródłaThommes, E., i K. Meisenheimer. "Number Density Predictions for Primeval Galaxies". W New Light on Galaxy Evolution, 454. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-0229-9_165.
Pełny tekst źródłaBellomo, N., Z. Brzezniak i L. M. de Socio. "Time Evolution of the Probability Density". W Nonlinear Stochastic Evolution Problems in Applied Sciences, 135–65. Dordrecht: Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-1820-0_5.
Pełny tekst źródłaKawatsu, Kazutaka. "Ecology and Evolution of Density-Dependence". W Diversity of Functional Traits and Interactions, 161–74. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-7953-0_7.
Pełny tekst źródłaGunn, James E. "Galaxy Evolution in High Density Environments". W The Epoch of Galaxy Formation, 167–78. Dordrecht: Springer Netherlands, 1989. http://dx.doi.org/10.1007/978-94-009-0919-9_19.
Pełny tekst źródłaFranco, José, Stan E. Kurtz, José A. García-Barreto, Guillermo García-Segura, Eduardo de la Fuente, Peter Hofner i Alejandro Esquivel. "Pressure and Density Gradients in H ii Regions". W The Evolution of Galaxies, 71–74. Dordrecht: Springer Netherlands, 2001. http://dx.doi.org/10.1007/978-94-017-3313-7_10.
Pełny tekst źródłaIglesias-Páramo, J., i C. Muñoz-Tuñón. "A Spectral Diagnostic for Density-Bounded HII Regions". W The Evolution of Galaxies, 99. Dordrecht: Springer Netherlands, 2001. http://dx.doi.org/10.1007/978-94-017-3313-7_18.
Pełny tekst źródłaPalouš, Jan, Soňa Ehlerová i Richard Wünsch. "Expanding Shells in Low and High Density Environments". W The Evolution of Galaxies, 579–82. Dordrecht: Springer Netherlands, 2003. http://dx.doi.org/10.1007/978-94-017-3315-1_115.
Pełny tekst źródłaPérez, Enrique, Rosa González Delgado i José M. Vílchez. "Density Structure of the Giant Hii Region NGC 2363". W The Evolution of Galaxies, 83–86. Dordrecht: Springer Netherlands, 2001. http://dx.doi.org/10.1007/978-94-017-3313-7_13.
Pełny tekst źródłaStreszczenia konferencji na temat "Density Evolution (DE)"
Walsh, John MacLaren. "Density Evolution for Expectation Propagation". W 2007 IEEE International Conference on Acoustics, Speech, and Signal Processing. IEEE, 2007. http://dx.doi.org/10.1109/icassp.2007.366293.
Pełny tekst źródłaKahraman, Sinan. "Strange Attractor in Density Evolution". W 2018 IEEE 10th International Symposium on Turbo Codes & Iterative Information Processing (ISTC). IEEE, 2018. http://dx.doi.org/10.1109/istc.2018.8625365.
Pełny tekst źródłaLee, Hwa-Teng, Yin-Fa Chen, Ting-Fu Hong, Ku-Ta Shih i Che-wei Hsu. "Microstructural evolution of Sn-3.5Ag solder with lanthanum addition". W High Density Packaging (ICEPT-HDP). IEEE, 2009. http://dx.doi.org/10.1109/icept.2009.5270676.
Pełny tekst źródłaLee, Hwa-Teng, Yin-Fa Chen, Ting-Fu Hong i Ku-Ta Shih. "Evolution of Ag3Sn compounds in solidification of eutectic Sn-3.5Ag solder". W High Density Packaging (ICEPT-HDP). IEEE, 2009. http://dx.doi.org/10.1109/icept.2009.5270669.
Pełny tekst źródłaZochmann, Erich, Peter Gerstoft i Christoph F. Mecklenbrauker. "Density evolution of sparse source signals". W 2015 3rd International Workshop on Compressed Sensing Theory and its Applications to Radar, Sonar and Remote Sensing (CoSeRa). IEEE, 2015. http://dx.doi.org/10.1109/cosera.2015.7330277.
Pełny tekst źródłaQiang Chen i Guoyuan Li. "Effects of dopants on wettability and microstructure evolution of Lead-Free solder joints". W High Density Packaging (ICEPT-HDP). IEEE, 2010. http://dx.doi.org/10.1109/icept.2010.5582338.
Pełny tekst źródłaBi, Jinglin, Anmin Hu, Ming Li i Dali Mao. "The evolution of interfacial microstructure of Sn3.5Ag solder bump with Cu under-bump metallization". W High Density Packaging (ICEPT-HDP). IEEE, 2011. http://dx.doi.org/10.1109/icept.2011.6066855.
Pełny tekst źródłaZaharie, D. "Density based clustering with crowding differential evolution". W Seventh International Symposium on Symbolic and Numeric Algorithms for Scientific Computing (SYNASC'05). IEEE, 2005. http://dx.doi.org/10.1109/synasc.2005.31.
Pełny tekst źródłaGoshtasbpour, Mehrdad. "A new approach to parton-density evolution". W The fourteenth international spin physics symposium, SPIN2000. AIP, 2001. http://dx.doi.org/10.1063/1.1384186.
Pełny tekst źródłaRefaey, Ahmed, Khaled Loukhaoukha i Adel Dahmane. "Cryptanalysis of stream cipher using density evolution". W 2017 IEEE Conference on Communications and Network Security (CNS). IEEE, 2017. http://dx.doi.org/10.1109/cns.2017.8228669.
Pełny tekst źródłaRaporty organizacyjne na temat "Density Evolution (DE)"
Zanino, R. Evolution of poloidal variation of impurity density and ambipolar potential in rotating tokamak plasma: Part 2. Office of Scientific and Technical Information (OSTI), marzec 1988. http://dx.doi.org/10.2172/5045968.
Pełny tekst źródłaSigmar, D. J., R. Zanino i C. T. Hsu. Evolution of poloidal variation of impurity density and ambipolar potential in rotating tokamak plasma: Part 1. Office of Scientific and Technical Information (OSTI), wrzesień 1987. http://dx.doi.org/10.2172/5454652.
Pełny tekst źródłaTaheri, Mitra L. Linking the Codependence of Grain Boundary Structure and Density to Defect Evolution Mechanisms during Radiation Damage. Office of Scientific and Technical Information (OSTI), sierpień 2019. http://dx.doi.org/10.2172/1547399.
Pełny tekst źródłaMitchell, James, Aubrey Poon i Dan Zhu. Constructing density forecasts from quantile regressions: multimodality in macro-financial dynamics. Federal Reserve Bank of Cleveland, kwiecień 2023. http://dx.doi.org/10.26509/frbc-wp-202212r.
Pełny tekst źródłaHill, C. Summary Report of the 7th Biennial Technical Meeting of the Code Centres Network of the International Atomic and Molecular Code Centres Network: Database Services for Radiation Damage in Nuclear Materials. IAEA Nuclear Data Section, październik 2021. http://dx.doi.org/10.61092/iaea.25ex-cn8n.
Pełny tekst źródłaHill, Christian. International Atomic and Molecular Code Centres Network: Database Services for Radiation Damage in Nuclear Materials. IAEA Nuclear Data Section, styczeń 2020. http://dx.doi.org/10.61092/iaea.agtk-r4gy.
Pełny tekst źródłaLui, Rui, Cheng Zhu, John Schmalzel, Daniel Offenbacker, Yusuf Mehta, Benjamin Barrowes, Danney Glaser i Wade Lein. Experimental and numerical analyses of soil electrical resistivity under subfreezing conditions. Engineer Research and Development Center (U.S.), kwiecień 2024. http://dx.doi.org/10.21079/11681/48430.
Pełny tekst źródłaNelson, Nathan, i Charles F. Yocum. Structure, Function and Utilization of Plant Photosynthetic Reaction Centers. United States Department of Agriculture, wrzesień 2012. http://dx.doi.org/10.32747/2012.7699846.bard.
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