Artykuły w czasopismach: „Delta doping”

1

Gossmann, H. J., i E. F. Schubert. "Delta doping in silicon". Critical Reviews in Solid State and Materials Sciences 18, nr 1 (styczeń 1993): 1–67. http://dx.doi.org/10.1080/10408439308243415.

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Kulbachinskii, V. A., V. G. Kytin, R. A. Lunin, A. V. Golikov, V. G. Mokerov, A. S. Bugaev, A. P. Senichkin, R. T. F. van Schaijk, A. de Visser i P. M. Koenraad. "Sn delta-doping in GaAs". Semiconductor Science and Technology 14, nr 12 (8.11.1999): 1034–41. http://dx.doi.org/10.1088/0268-1242/14/12/304.

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Bénière, François, René Chaplain, Marcel Gauneau, Viswanatha Reddy i André Régrény. "Delta-doping in diffusion studies". Journal de Physique III 3, nr 12 (grudzień 1993): 2165–71. http://dx.doi.org/10.1051/jp3:1993259.

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4

Zeindl, H. P., E. Hammerl, W. Kiunke i I. Eisele. "Delta doping superlattices in silicon". Journal of Electronic Materials 19, nr 10 (październik 1990): 1119–22. http://dx.doi.org/10.1007/bf02651991.

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Kim, Jong-Hee, Gye Mo Yang, Sung Chul Choi, Ji Youn Choi, Hyun Kyung Cho, Kee Young Lim i Hyung Jae Lee. "Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition". MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 305–9. http://dx.doi.org/10.1557/s1092578300002635.

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Si delta-doping in the GaN layer has been successfully demonstrated by low-pressure metalorganic chemical vapor deposition at a growth temperature of 1040 . Si delta-doping concentration increases and then decreases with an increase in delta-doping time. This indicates that delta-doping concentration is limited by the desorption process owing to much higher thermal decomposition efficiency of silane at high growth temperatures of GaN. In addition, it was observed that the use of a post-purge step in the ammonia ambient reduces Si delta-doping concentration. From capacitance-voltage measurement, a sharp carrier concentration profile with a full-width at half maximum of 4.1 nm has been achieved with a high peak concentration of 9.8 1018 cm−3.

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6

Schubert, E. F., i R. F. Kopf. "Delta-Doping in III-V Semiconductors". Materials Science Forum 65-66 (styczeń 1991): 53–66. http://dx.doi.org/10.4028/www.scientific.net/msf.65-66.53.

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7

Eisele, I. "Delta-type doping profiles in silicon". Applied Surface Science 36, nr 1-4 (styczeń 1989): 39–51. http://dx.doi.org/10.1016/0169-4332(89)90897-0.

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8

Zagwijn, P. M., Y. N. Erokhin, W. F. J. Slijkerman, J. F. van der Veen, G. F. A. van de Walle, D. J. Gravesteijn i A. A. van Gorkum. "Ga delta‐doping layers in silicon". Applied Physics Letters 59, nr 12 (16.09.1991): 1461–63. http://dx.doi.org/10.1063/1.105288.

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Zervos, Matthew. "Delta(δ)-doping of semiconductor nanowires". physica status solidi (RRL) - Rapid Research Letters 7, nr 9 (1.07.2013): 651–54. http://dx.doi.org/10.1002/pssr.201307219.

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Butler, James E., Anatoly Vikharev, Alexei Gorbachev, Mikhail Lobaev, Anatoly Muchnikov, Dmitry Radischev, Vladimir Isaev i in. "Nanometric diamond delta doping with boron". physica status solidi (RRL) - Rapid Research Letters 11, nr 1 (7.12.2016): 1600329. http://dx.doi.org/10.1002/pssr.201600329.

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11

Liu, Wen-Chau, i Chung-Yih Sun. "Properties of Sawtooth-Doping Superlattice with Different Delta-Doping Densities". Japanese Journal of Applied Physics 30, Part 1, No. 4 (15.04.1991): 635–36. http://dx.doi.org/10.1143/jjap.30.635.

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Cai, Yan, i Jurgen Michel. "High n-Type Doping in Ge for Optical Gain and Lasing". Solid State Phenomena 205-206 (październik 2013): 394–99. http://dx.doi.org/10.4028/www.scientific.net/ssp.205-206.394.

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We review two ex-situ doping methods to achieve high n-type doping up to mid-1019 cm-3 in Ge-on-Si thin films. For both, delta doping and ion implantation, rapid thermal annealing is used to diffuse phosphorus from a diffusion source into the single crystal Ge layer. The diffusion mechanism is studied and we find that dopant enhanced diffusion in in-situ doped Ge attributes to the high doping level. A band gap narrowing effect is observed in highly doped n-type Ge through photoluminescence measurements by determining the photoluminescence peak shift. An empirical linear expression of the direct band gap narrowing shift with carrier concentration is proposed.

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13

Yarn, K. F. "MOCVD-Grown InGa/GaAs Emitter Delta Doping Heterojunction Bipolar Transistors". Active and Passive Electronic Components 25, nr 3 (2002): 239–43. http://dx.doi.org/10.1080/08827510213499.

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The influence of delta doping sheet at base-emitter (BE) junction for an InGaP/GaAs heterojunction bipolar transistor (HBT) with a 75Å undoped spacer layer is investigated. A common emitter current gain of 235, an offset voltage as small as 50mV and an Ic ideal factor of 1.01 are obtained, respectively. The use of delta doping sheet at BE junction results in a high gain and low offset voltage HBT. The improvement of current gain and offset voltage may be attributed to the reduction of BE potential spike by introducing a delta doping layer even without the BE junction passivation.

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14

Henry, Anne, L. Storasta i Erik Janzén. "Nitrogen Delta Doping in 4H-SiC Epilayers". Materials Science Forum 433-436 (wrzesień 2003): 153–56. http://dx.doi.org/10.4028/www.scientific.net/msf.433-436.153.

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15

Hart, L., B. R. Davidson, J. M. Fernández, R. C. Newman i C. C. Button. "Carbon Delta-Doping In GaAs and AlAs". Materials Science Forum 196-201 (listopad 1995): 409–14. http://dx.doi.org/10.4028/www.scientific.net/msf.196-201.409.

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Tribuzy, C. V. B., S. M. Landi, M. P. Pires, R. Butendeich, P. L. Souza, A. C. Bittencourt, G. E. Marques i A. B. Henriques. "nipi delta-doping superlattices for amplitude modulation". Brazilian Journal of Physics 32, nr 2a (czerwiec 2002): 269–74. http://dx.doi.org/10.1590/s0103-97332002000200006.

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Tribuzy, C. V. B., P. L. Souza, S. M. Landi, M. P. Pires, R. Butendeich, A. C. Bittencourt, G. E. Marques i A. B. Henriques. "Delta-doping superlattices in multiple quantum wells". Physica E: Low-dimensional Systems and Nanostructures 11, nr 2-3 (październik 2001): 261–67. http://dx.doi.org/10.1016/s1386-9477(01)00215-6.

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18

Jorke, H., i H. Kibbel. "Boron delta doping in Si and Si0.8Ge0.2layers". Applied Physics Letters 57, nr 17 (22.10.1990): 1763–65. http://dx.doi.org/10.1063/1.104060.

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19

Winking, L., M. Wenderoth, T. C. G. Reusch, R. G. Ulbrich, P. J. Wilbrandt, R. Kirchheim, S. Malzer i G. Döhler. "Ideal delta doping of carbon in GaAs". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 23, nr 1 (2005): 267. http://dx.doi.org/10.1116/1.1856465.

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20

Cerniansky, M., D. W. E. Allsopp i M. Hopkinson. "Delta-doping-enhanced InGaAs/InAlAs heterobarrier diodes". Electronics Letters 31, nr 6 (16.03.1995): 493–94. http://dx.doi.org/10.1049/el:19950314.

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21

Mattey, N. L., M. Hopkinson, R. F. Houghton, M. G. Dowsett, D. S. McPhail, T. E. Whall, E. H. C. Parker, G. R. Booker i J. Whitehurst. "P-type delta doping in silicon MBE". Thin Solid Films 184, nr 1-2 (styczeń 1990): 15–19. http://dx.doi.org/10.1016/0040-6090(90)90392-q.

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22

Kang, In Ho, Wook Bahng, Sang Cheol Kim, Sung Jae Joo i Nam Kyun Kim. "Numerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped Channel MESFET Having Various Delta-Doping Concentrations". Materials Science Forum 556-557 (wrzesień 2007): 823–26. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.823.

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A double delta-doped channel 4H-SiC MESFET is proposed to kick out degradation of the DC and RF performances caused by the surface traps, by forming a quantum-well-like potential well and separating an effective channel from the surface. To obtain an optimum device structure, the DC and RF performances of double delta-doped channel MESFETs having various delta-doping concentrations but the same pinch-off voltage with that of conventional MESFET were also investigated. The SilvacoTM simulation results show that the double delta-doped channel MESFET achieved more improvement of the drain current, the cut-off frequency, and the maximum oscillation frequency for higher delta-doping concentration near the gate. In all cases, DC and RF performances for double delta-doped channel MESFETs are much improved than those of the conventional MESFET.

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23

Wang, Ke-Fan, Yongxian Gu, Xiaoguang Yang, Tao Yang i Zhanguo Wang. "Si delta doping inside InAs/GaAs quantum dots with different doping densities". Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 30, nr 4 (lipiec 2012): 041808. http://dx.doi.org/10.1116/1.4732462.

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24

Khusyainov, D. I., C. Dekeyser, A. M. Buryakov, E. D. Mishina, G. B. Galiev, E. A. Klimov, S. S. Pushkarev i A. N. Klochkov. "Ultrafast carrier dynamics in LT-GaAs doped with Si delta layers". International Journal of Modern Physics B 31, nr 27 (24.10.2017): 1750195. http://dx.doi.org/10.1142/s0217979217501958.

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We characterized the ultrafast properties of LT-GaAs doped with silicon [Formula: see text]-layers and introduced delta-doping ([Formula: see text]-doping) as efficient method for enhancing the properties of GaAs-based structures which can be useful for terahertz (THz) antenna, ultrafast switches and other high frequency applications. Low temperature grown GaAs (LT-GaAs) became one of the most promising materials for ultrafast optical and THz devices due to its short carrier lifetime and high carrier mobility. Low temperature growth leads to a large number of point defects and an excess of arsenic. Annealing of LT-GaAs creates high resistivity through the formation of As-clusters, which appear due to the excess of arsenic. High resistivity is very important for THz antennas so that voltage can be applied without the risk of breakdown. With [Formula: see text]-Si doping, control of As-clusters is possible, since after annealing, clusters align in the plane where the [Formula: see text]-doping occurs. In this paper, we compare the properties of LT-GaAs-based planar structures with and without [Formula: see text]-Si doping and subsequent annealing. We used pump-probe transient reflectivity as a probe for ultrafast carrier dynamics in LT-GaAs. The results of the experiment were interpreted using the Ortiz model and show that the [Formula: see text]-Si doping increases deep donor and acceptor concentrations and decreases the photoinduced carrier lifetime as compared with LT-GaAs with same growth and annealing temperatures, but without doping.

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25

Nikiforov, Alexander I., B. Z. Kanter, S. I. Stenin i S. V. Rubanov. "Sb Delta-Type Doping in Si-MBE Superlattices". Materials Science Forum 69 (styczeń 1991): 17–20. http://dx.doi.org/10.4028/www.scientific.net/msf.69.17.

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26

Akhavan, Nima Dehdashti, Gilberto Armando Umana-Membreno, Renjie Gu, Jarek Antoszewski i Lorenzo Faraone. "Delta Doping in HgCdTe-Based Unipolar Barrier Photodetectors". IEEE Transactions on Electron Devices 65, nr 10 (październik 2018): 4340–45. http://dx.doi.org/10.1109/ted.2018.2861378.

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27

Yokogawa, Toshiya, Kunimasa Takahashi, Takeshi Uenoyama, Osamu Kusumoto, Masao Uchida i Makoto Kitabatake. "Nitrogen delta doping in 6H silicon carbide layers". Journal of Applied Physics 89, nr 3 (2001): 1794. http://dx.doi.org/10.1063/1.1337937.

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28

Cao, X. A., X. M. Li, S. Li i L. Y. Liu. "Conductivity Enhancement in Organic Electronics by Delta Doping". IEEE Electron Device Letters 37, nr 12 (grudzień 2016): 1628–31. http://dx.doi.org/10.1109/led.2016.2620184.

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29

Polly, Stephen J., David V. Forbes, Kristina Driscoll, Staffan Hellstrom i Seth M. Hubbard. "Delta-Doping Effects on Quantum-Dot Solar Cells". IEEE Journal of Photovoltaics 4, nr 4 (lipiec 2014): 1079–85. http://dx.doi.org/10.1109/jphotov.2014.2316677.

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30

Böer, K. W., i J. Piprek. "Inverse delta doping for improvement of solar cells". Journal of Applied Physics 75, nr 10 (15.05.1994): 5095–101. http://dx.doi.org/10.1063/1.355753.

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31

Areiza, M. C. L., C. V. B. Tribuzy, S. M. Landi, M. P. Pires i P. L. Souza. "Amplitude Modulators containing an nipi delta doping superlattice". IEEE Photonics Technology Letters 17, nr 10 (październik 2005): 2071–73. http://dx.doi.org/10.1109/lpt.2005.854415.

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32

Zagwijn, P. M., J. F. van der Veen, E. Vlieg, A. H. Reader i D. J. Gravesteijn. "A solution of the doping problem for Ga delta‐doping layers in Si". Journal of Applied Physics 78, nr 8 (15.10.1995): 4933–38. http://dx.doi.org/10.1063/1.359782.

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33

Zehe, Alfred, Eusebio Torres Tapia i Araceli Ramírez. "A METHOD OF MEASURING THERMAL STABILITY IN DELTA-DOPING". Revista de Investigación de Física 8, nr 02 (30.12.2005): 19–25. http://dx.doi.org/10.15381/rif.v8i02.8550.

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Se discute una superred novedosa, que permite la determinación de la estabilidad geométrica y precisión de capas delta-dopadas con respecto a efectos de difusión y migración, así como la evaluación tecnológica de la producción de dispositivos. Esta estructura nanométrica actúa como sonda interna en copamiento de superredes, semejante al caso conocido de los "pozos ensanchados" en superredes de composición. Se usa la luminiscencia entre pares donador-aceptor, la cual depende de la distancia de separación que refleja el arreglo geométrico de capas delta-dopadas vecinas, siempre que existan donadores y aceptores en las capas correspondientes.

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34

Zhao, Ying, Shengrui Xu, Hongchang Tao, Yachao Zhang, Chunfu Zhang, Lansheng Feng, Ruoshi Peng i in. "Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure". Materials 14, nr 1 (31.12.2020): 144. http://dx.doi.org/10.3390/ma14010144.

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A method of combining the AlGaN/GaN superlattices and Mg delta doping was proposed to achieve a high conductivity p-type GaN layer. The experimental results provided the evidence that the novel doping technique achieves superior p-conductivity. The Hall-effect measurement indicated that the hole concentration was increased by 2.06 times while the sheet resistivity was reduced by 48%. The fabricated green-yellow light-emitting diodes using the achieved high conductivity p-type GaN layer showed an 8- and 10-times enhancement of light output power and external quantum efficiency, respectively. The subsequent numerical calculation was conducted by using an Advanced Physical Model of Semiconductor Device to reveal the mechanism of enhanced device performance. This new doping technique offers an attractive solution to the p-type doping problems in wide-bandgap GaN or AlGaN materials.

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35

Henning, J. C. M., Y. A. R. R. Kessener, Paul M. Koenraad, M. R. Leys, W. C. van der Vleuten, J. H. Wolter i A. M. Frens. "Luminescence of a Delta Doping Related Exciton in GaAs:Si". Materials Science Forum 143-147 (październik 1993): 653–56. http://dx.doi.org/10.4028/www.scientific.net/msf.143-147.653.

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36

Rosenberg, R. A., S. P. Frigo, Sunwoo Lee i P. A. Dowben. "Selective area, synchrotron radiation induced, delta doping of silicon". Journal of Applied Physics 71, nr 10 (15.05.1992): 4795–98. http://dx.doi.org/10.1063/1.350619.

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37

Joyce, T. B., T. J. Bullough, T. Farrell, B. R. Davidson, D. E. Sykes i A. Chew. "Carbon delta doping in chemical beam epitaxy using CBr4". Journal of Crystal Growth 175-176 (maj 1997): 377–82. http://dx.doi.org/10.1016/s0022-0248(96)00957-8.

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38

Su, Yan Kuin, Ruey Lue Wang i Yeong Her Wang. "Negative Differential Resistance in GaAs Delta-Doping Tunneling Diodes". Japanese Journal of Applied Physics 30, Part 2, No. 2B (15.02.1991): L292—L294. http://dx.doi.org/10.1143/jjap.30.l292.

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39

Bayram, C., J. L. Pau, R. McClintock i M. Razeghi. "Delta-doping optimization for high quality p-type GaN". Journal of Applied Physics 104, nr 8 (15.10.2008): 083512. http://dx.doi.org/10.1063/1.3000564.

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40

Kozuka, Y., M. Kim, H. Ohta, Y. Hikita, C. Bell i H. Y. Hwang. "Enhancing the electron mobility via delta-doping in SrTiO3". Applied Physics Letters 97, nr 22 (29.11.2010): 222115. http://dx.doi.org/10.1063/1.3524198.

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41

Kim, K. H., J. Li, S. X. Jin, J. Y. Lin i H. X. Jiang. "III-nitride ultraviolet light-emitting diodes with delta doping". Applied Physics Letters 83, nr 3 (21.07.2003): 566–68. http://dx.doi.org/10.1063/1.1593212.

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42

Young, P. G., R. A. Mena, S. A. Alterovitz, S. E. Schacham i E. J. Haugland. "Temperature independent quantum well FET with delta channel doping". Electronics Letters 28, nr 14 (1992): 1352. http://dx.doi.org/10.1049/el:19920858.

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Muller, F., F. Koch i A. Kohl. "IR detection using subband absorption in delta -doping layers". Semiconductor Science and Technology 6, nr 12C (1.12.1991): C133—C136. http://dx.doi.org/10.1088/0268-1242/6/12c/028.

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Ohno, Kenichi, F. Joseph Heremans, Lee C. Bassett, Bryan A. Myers, David M. Toyli, Ania C. Bleszynski Jayich, Christopher J. Palmstrøm i David D. Awschalom. "Engineering shallow spins in diamond with nitrogen delta-doping". Applied Physics Letters 101, nr 8 (20.08.2012): 082413. http://dx.doi.org/10.1063/1.4748280.

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Yanagisawa, Kohei, Suguru Takeuchi, Hirosi Yoshitake, Koji Onomitsu i Yosizi Horikoshi. "Enhanced magnetization by modulated Mn delta doping in GaAs". Journal of Crystal Growth 301-302 (kwiecień 2007): 634–37. http://dx.doi.org/10.1016/j.jcrysgro.2006.12.001.

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Wang, Xiaohui, i Yijun Zhang. "Negative electron affinity GaN photocathode with Mg delta-doping". Optik 168 (wrzesień 2018): 278–81. http://dx.doi.org/10.1016/j.ijleo.2018.04.112.

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Zhang, Yanchao, Li Yue, Xiren Chen, Jun Shao, Xin Ou i Shumin Wang. "Wavelength extension in GaSbBi quantum wells using delta-doping". Journal of Alloys and Compounds 744 (maj 2018): 667–71. http://dx.doi.org/10.1016/j.jallcom.2018.02.027.

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Chen, Yingda, Hualong Wu, Guanglong Yue, Zimin Chen, Zhiyuan Zheng, Zhisheng Wu, Gang Wang i Hao Jiang. "Enhanced Mg Doping Efficiency in P-Type GaN by Indium-Surfactant-Assisted Delta Doping Method". Applied Physics Express 6, nr 4 (1.04.2013): 041001. http://dx.doi.org/10.7567/apex.6.041001.

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Guo, S. P., W. Lin, X. Zhou, M. C. Tamargo, C. Tian, I. Kuskovsky i G. F. Neumark. "Highp-type doping of ZnBeSe using a modified delta-doping technique with N and Te". Journal of Applied Physics 90, nr 4 (15.08.2001): 1725–29. http://dx.doi.org/10.1063/1.1384863.

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Horsfall, Alton B., C. H. A. Prentice, Peter Tappin, Praneet Bhatnagar, Nicolas G. Wright, Konstantin Vassilevski i Irina P. Nikitina. "Optimisation of 4H-SiC MOSFET Structures for Logic Applications". Materials Science Forum 527-529 (październik 2006): 1325–28. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1325.

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Although Silicon Carbide has become the material of choice for high power applications in a range of extreme environments, the interest in creating active chemical sensors requires the development of transistors for additional control circuits to operate in these environments. Despite the recent advances in the quality of oxide layers on SiC, the mobility of inversion layers is still low and this will affect the maximum frequency of the operation for these devices. We present simulation results which indicate that a delta channel, in both n-channel and p-channel structures, is suitable for transistors used with these low level signals. By varying the doping levels of the device we have shown that the optimum delta doping for this application is 1.43x1019 cm-3 for both n and p channel devices. We then show the effects of high temperatures on the delta FET devices and make comparisons with standard SiC MOSFET devices.

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