Rozprawy doktorskie na temat „Defect”
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Weight, Braden Michael. "Inspection of Excited State Properties in Defected Carbon Nanotubes from Multiple Exciton Generation to Defect-Defect Interactions". Thesis, North Dakota State University, 2020. https://hdl.handle.net/10365/31784.
Pełny tekst źródłaLiu, Chen. "VLSI circuit defect diagnosis : open defects and run-time speed". Diss., University of Iowa, 2008. http://ir.uiowa.edu/etd/8.
Pełny tekst źródłaHassan, Syed Karimuddin and Syed Muhammad. "Defect Detection in SRS using Requirement Defect Taxonomy". Thesis, Blekinge Tekniska Högskola, Sektionen för datavetenskap och kommunikation, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:bth-5253.
Pełny tekst źródłaskarimuddin@yahoo.com, hassanshah357@gmail.com
Steinegger, Thomas. "Defect Engineering". Doctoral thesis, Technische Universitaet Bergakademie Freiberg Universitaetsbibliothek "Georgius Agricola", 2009. http://nbn-resolving.de/urn:nbn:de:swb:105-8973489.
Pełny tekst źródłaTran, Qui Can Cuong. "Empirical evaluation of defect identification indicators and defect prediction models". Thesis, Blekinge Tekniska Högskola, Sektionen för datavetenskap och kommunikation, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:bth-2553.
Pełny tekst źródłaHansen, Mark David. "Zero defect data". Thesis, Massachusetts Institute of Technology, 1991. http://hdl.handle.net/1721.1/13812.
Pełny tekst źródłaRogers, Stuart Craig. "Defect Detection Microscopy". BYU ScholarsArchive, 2010. https://scholarsarchive.byu.edu/etd/2256.
Pełny tekst źródłaChroneos, Alexander. "Defect processes in germanium". Thesis, Imperial College London, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.443837.
Pełny tekst źródłaHuang, H.-C. "Defect-free shell elements". Thesis, Swansea University, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.378091.
Pełny tekst źródłaHendren, Stuart. "Extra special defect groups". Thesis, University of Birmingham, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.403603.
Pełny tekst źródłaYe, Xin. "Automated Software Defect Localization". Ohio University / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1462374079.
Pełny tekst źródłaZucca, Matthew. "Defect At Manitoulin Permaculture". Thesis, Université d'Ottawa / University of Ottawa, 2019. http://hdl.handle.net/10393/39827.
Pełny tekst źródłaKirrander, Adam. "Quantum defect theory of molecules". Thesis, University of Oxford, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.422660.
Pełny tekst źródłaNgan, Yuk-tung Henry, i 顏旭東. "Patterned Jacquard fabric defect detection". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2004. http://hub.hku.hk/bib/B30070880.
Pełny tekst źródłaWang, Yutian. "Defect-induced ferromagnetism in SiC". Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-164623.
Pełny tekst źródłaSokol, Alexey Abramovich. "Defect structures in zeolite crystals". Thesis, University College London (University of London), 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.326272.
Pełny tekst źródłaVuong, Amanda. "Nanocarbon : defect architectures and properties". Thesis, University of Surrey, 2017. http://epubs.surrey.ac.uk/845194/.
Pełny tekst źródłaPhull, Harpinder Singh. "Investigation into Turbocharger crazing defect". Thesis, University of Birmingham, 2014. http://etheses.bham.ac.uk//id/eprint/5447/.
Pełny tekst źródłaMonmeyran, Corentin. "Point defect engineering in germanium". Thesis, Massachusetts Institute of Technology, 2016. http://hdl.handle.net/1721.1/108207.
Pełny tekst źródłaThis electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student-submitted PDF version of thesis.
Includes bibliographical references (pages 121-127).
In 1947, the first transistor was made of germanium, but soon silicon became the core material of computer chips because of its processability. However, as the typical dimensions of transistors are getting closer to the atomic size, the traditional approach of scaling down transistors to improve performance is reaching its limits, and other elements need to be used in conjunction with silicon. Germanium is one of the key materials to empower silicon based devices because it possesses electronic and optoelectronic properties complementary to those of silicon, among them higher carrier mobilities and a direct band gap (G-valley) at 1.55 [mu]m (the telecom C-band, therefore adding new capabilities to silicon integrated microphotonics). Furthermore, good quality Ge layers can be grown epitaxially on a Si substrate, allowing a monolithic integration of devices. However, compared to silicon, little is known about the point defects in germanium. The goal of the present doctoral work is to remedy this gap. To this end, we have used radiation (gamma rays, alpha particles, and neutrons) to controllably introduce point defects in crystalline germanium, which were then characterized by Deep-Level Transient Spectroscopy (DLTS), a technique that allows the determination of the activation energy, capture cross-section, and concentration of the said defects. By studying their electronic properties, annealing kinetics, and introduction rates, we were able to separate vacancy-containing from interstitial-containing defects and gain insight on their physical nature and formation process. We especially identified a di-interstitial defect and a tri-interstitial defect. In addition, we proved that in the case of alpha particles and neutron irradiation, the fact that defects are generated in a collision cascade influences their carrier capture rates and annealing behaviors. We have also characterized the impact of radiation on commercial germanium-on-silicon photodetectors, and showed that point defects associate with dislocations in epitaxial Ge-on-Si layers. Finally, we have investigated the passivation of midgap states by implanting germanium with fluorine, and showed how the interaction between the halogen element, the amorphous/crystalline interface during the solid phase epitaxy, and the implantation damage is key in obtaining a high performance material
by Corentin Monmeyran.
Ph. D.
Ginder, John Matthew. "Electronic defect states in polyaniline". The Ohio State University, 1988. http://rave.ohiolink.edu/etdc/view?acc_num=osu1343059710.
Pełny tekst źródłaFlynn, Kevin Joseph. "Defect analysis using resonant ultrasound spectroscopy". [College Station, Tex. : Texas A&M University, 2008. http://hdl.handle.net/1969.1/ETD-TAMU-2348.
Pełny tekst źródłaNg, Nga-yi Ada. "Defect detection in semiconductor die images". Click to view the E-thesis via HKUTO, 2005. http://sunzi.lib.hku.hk/hkuto/record/B32040799.
Pełny tekst źródłaPortnoy, William. "Distributable defect localization using Markov models /". Thesis, Connect to this title online; UW restricted, 2005. http://hdl.handle.net/1773/6883.
Pełny tekst źródłaLinden, Matthew D. "The haemostatic defect of cardiopulmonary bypass". University of Western Australia. School of Surgery and Pathology, 2003. http://theses.library.uwa.edu.au/adt-WU2006.0009.
Pełny tekst źródłaThetford, Roger. "Theory of defect interactions in metals". Thesis, University of Oxford, 1989. http://ora.ox.ac.uk/objects/uuid:f6a8f36e-4d17-4834-a4b5-5ce2de9aab11.
Pełny tekst źródłaNg, Nga-yi Ada, i 伍雅怡. "Defect detection in semiconductor die images". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2005. http://hub.hku.hk/bib/B32040799.
Pełny tekst źródłaWong, Boon Kwei. "Automatic surface defect recognition and classification". Thesis, University of Sunderland, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.283762.
Pełny tekst źródłaHawtin, Benjamin Charles. "Defect criticality of carbon fibre composites". Thesis, University of Bath, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.425875.
Pełny tekst źródłaZhang, Wei Dong. "Defect generation and characterization in MOSFETs". Thesis, Liverpool John Moores University, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.275794.
Pełny tekst źródłaRowell, D. K. "Point defect calculations in ionic crystals". Thesis, University of Reading, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.370129.
Pełny tekst źródłaWilson, Raymond A. "Towards a zero defect welding system". Thesis, University of Liverpool, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.321249.
Pełny tekst źródłaHoward, Neil John. "Defect-tolerant Field-Programmable Gate Arrays". Thesis, University of York, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.359290.
Pełny tekst źródłaXie, Xianghua. "Defect detection in random colour textures". Thesis, University of Bristol, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.425096.
Pełny tekst źródłaTailor, Mitul. "Automatic surface defect quantification in 3D". Thesis, Loughborough University, 2013. https://dspace.lboro.ac.uk/2134/14429.
Pełny tekst źródłaLai, Liang Simon. "Defect correction methods for computational aeroacoustics". Thesis, University of Greenwich, 2013. http://gala.gre.ac.uk/11452/.
Pełny tekst źródłaSong, Keng Yew. "Surface defect detection on textured background". Thesis, University of Surrey, 1993. http://epubs.surrey.ac.uk/844113/.
Pełny tekst źródłaFoster, Moira. "Defect Detection in Selective Laser Melting". DigitalCommons@CalPoly, 2018. https://digitalcommons.calpoly.edu/theses/1874.
Pełny tekst źródłaLong, Stephen M. "Structure of defect states in polyaniline". The Ohio State University, 1995. http://rave.ohiolink.edu/etdc/view?acc_num=osu1343061764.
Pełny tekst źródłaXiao, Xinhua. "Automated Defect Recognition in Digital Radiography". University of Cincinnati / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1439309683.
Pełny tekst źródłaLotharukpong, Chalothorn. "Defect characterisation in multi-crystalline silicon". Thesis, University of Oxford, 2015. http://ora.ox.ac.uk/objects/uuid:a803fada-2296-41c3-9d96-864c186957a2.
Pełny tekst źródłaWells, George Henry. "Growth and defect formation in graphene". Thesis, Durham University, 2016. http://etheses.dur.ac.uk/11616/.
Pełny tekst źródłaFox, Matthew William. "Thermography approaches for building defect detection". Thesis, University of Plymouth, 2016. http://hdl.handle.net/10026.1/4304.
Pełny tekst źródłaPathak, Ajay Kumar. "Automated defect detection in textured materials". Thesis, Hong Kong : University of Hong Kong, 2001. http://sunzi.lib.hku.hk/hkuto/record.jsp?B23295168.
Pełny tekst źródła"Defects and Defect Clusters in Compound Semiconductors". Doctoral diss., 2020. http://hdl.handle.net/2286/R.I.57438.
Pełny tekst źródłaDissertation/Thesis
Doctoral Dissertation Physics 2020
Han-Chia, Cheng. "Layout-Based Defect-Driven Diagnosis for Intra-Cell Bridging Defects". 2006. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0016-1303200709465952.
Pełny tekst źródłaCheng, Han-Chia, i 鄭漢嘉. "Layout-Based Defect-Driven Diagnosis for Intra-Cell Bridging Defects". Thesis, 2006. http://ndltd.ncl.edu.tw/handle/83096677301786868453.
Pełny tekst źródła國立清華大學
電機工程學系
95
In this thesis we provide a link between gate-level diagnosis and defect-based diagnosis to pinpoint the exact physical locations of the defects. Physical defects are converted into equivalent sub-circuits at logic domain based on a butterfly structure. Diagnostic test pattern generation is formulated as a stuck-at fault detection problem that can be piggybacked on SAT solver. Experimental results indicate that we can reduce 86% possible defect locations and pinpoint the actual locations of the defects for ISCAS85 benchmark circuits. Once the cell defect library is constructed, the proposed method can be applied to any cell-based design without additional stress.
Fu, Hsu-Cheng, i 傅旭正. "Integrated Circuit Yield Model with Defect Source and Defect Clustering". Thesis, 1999. http://ndltd.ncl.edu.tw/handle/99281842382907924574.
Pełny tekst źródła國立交通大學
工業工程與管理系
87
For the integrated circuits (IC) manufacturer, the yield of each wafer is a key index to evaluate the profit. Therefore, yield management has been developed to promote the yield quickly and effectively. One of the most important tool in the yield management is the yield model. The conventional yield models considered only the correlation between the defect counts and the yield, consequently, the models can not predict the yield accurately. The prediction becomes worse when the wafer size increases and the defect clustering phenomenon becomes more apparent. Although the modified yield models have better prediction than that of the conventional yield model, the modified yield model are too complicated for engineers to use in practice. This study considers the effects of defect sources, defect counts and defect clustering on wafer and builds a forecasting yield model by using the neural networks. The proposed yield model not only can promote the prediction power efficiently, but also is very easy to implement. The proposed yield model is illustrated by a real case provided by an IC manufacturer in Taiwan to verify the effectiveness of the proposed yield model. Comparisons are also made among the conventional yield models, modified yield models and the proposed yield model.
Jiang, Tian. "Personalized Defect Prediction". Thesis, 2013. http://hdl.handle.net/10012/7786.
Pełny tekst źródłaCosta, João Rui Machado. "Software Defect Classification". Master's thesis, 2016. https://hdl.handle.net/10216/96898.
Pełny tekst źródłaCosta, João Rui Machado. "Software Defect Classification". Dissertação, 2016. https://hdl.handle.net/10216/96898.
Pełny tekst źródła