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Artykuły w czasopismach na temat "Crystal defect analysis"
Kirste, Lutz, Karolina Grabianska, Robert Kucharski, Tomasz Sochacki, Boleslaw Lucznik i Michal Bockowski. "Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography". Materials 14, nr 19 (22.09.2021): 5472. http://dx.doi.org/10.3390/ma14195472.
Pełny tekst źródłaMohammed, M., i W. Cel. "Photonic crystal analysis for multiplexer and de-multiplexer applications". Journal of Physics: Conference Series 2322, nr 1 (1.08.2022): 012074. http://dx.doi.org/10.1088/1742-6596/2322/1/012074.
Pełny tekst źródłaWang, Ke, Ren Ke Kang, Zhu Ji Jin i Dong Ming Guo. "Theoretical Analysis and Experimental Verification of Triangular Fracture Defects of MgO Single Crystal Substrate in Lapping or Polishing Process". Key Engineering Materials 364-366 (grudzień 2007): 739–44. http://dx.doi.org/10.4028/www.scientific.net/kem.364-366.739.
Pełny tekst źródłaLarson, Bennett C. "Historical Perspective on Diffraction Line-Profile Analyses for Crystals Containing Defect Clusters". Crystals 9, nr 5 (17.05.2019): 257. http://dx.doi.org/10.3390/cryst9050257.
Pełny tekst źródłaKato, Tomohisa, Kazutoshi Kojima, Shin Ichi Nishizawa i Kazuo Arai. "Defect Characterization of 4H-SiC Bulk Crystals Grown on Micropipe Filled Seed Crystals". Materials Science Forum 483-485 (maj 2005): 315–18. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.315.
Pełny tekst źródłaChikvaidze, G., N. Mironova-Ulmane, A. Plaude i O. Sergeev. "Investigation of Silicon Carbide Polytypes by Raman Spectroscopy". Latvian Journal of Physics and Technical Sciences 51, nr 3 (1.06.2014): 51–57. http://dx.doi.org/10.2478/lpts-2014-0019.
Pełny tekst źródłaKatch, L., M. Moghaddaszadeh, C. L. Willey, A. T. Juhl, M. Nouh i A. P. Argüelles. "Analysis of geometric defects in square locally resonant phononic crystals: A comparative study of modeling approaches". Journal of the Acoustical Society of America 154, nr 5 (1.11.2023): 3052–61. http://dx.doi.org/10.1121/10.0022330.
Pełny tekst źródłaNykyruy, L. I., V. V. Prokopiv, M. P. Levkun i A. V. Lysak. "Analysis of Defect Subsystem ZnSe, Doped with Transition Metals (Co, Ni)". Фізика і хімія твердого тіла 16, nr 4 (15.12.2015): 716–21. http://dx.doi.org/10.15330/pcss.16.4.716-721.
Pełny tekst źródłaAl-Sharab, Jafar F., S. D. Tse i B. H. Kear. "Defect Analysis of Single Crystal Synthetic Diamond". Microscopy and Microanalysis 24, S1 (sierpień 2018): 1766–67. http://dx.doi.org/10.1017/s1431927618009315.
Pełny tekst źródłaSong, Pingxin, Zhiwei Zhao, Xiaodong Xu, Peizhen Deng i Jun Xu. "Defect analysis in Czochralski-grown Yb:FAP crystal". Journal of Crystal Growth 286, nr 2 (styczeń 2006): 498–501. http://dx.doi.org/10.1016/j.jcrysgro.2005.10.116.
Pełny tekst źródłaRozprawy doktorskie na temat "Crystal defect analysis"
Eddleston, Mark David. "Crystal form and defect analysis of pharmaceutical materials". Thesis, University of Cambridge, 2012. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.610090.
Pełny tekst źródłaGiannattasio, Armando. "Interaction of oxygen and nitrogen impurities with dislocations in silicon single-crystals". Thesis, University of Oxford, 2004. http://ora.ox.ac.uk/objects/uuid:41cf8568-8411-4a85-8788-7d390307c7c3.
Pełny tekst źródłaPaturi, Naveen Kumar. "Analysis of photonic crystal defects for biosensing applications". Morgantown, W. Va. : [West Virginia University Libraries], 2006. https://eidr.wvu.edu/etd/documentdata.eTD?documentid=4861.
Pełny tekst źródłaTitle from document title page. Document formatted into pages; contains viii, 70 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 55-57).
Druet, Pierre-Etienne. "Analysis of a coupled system of partial differential equations modeling the interaction between melt flow, global heat transfer and applied magnetic fields in crystal growth". Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät II, 2009. http://dx.doi.org/10.18452/15893.
Pełny tekst źródłaThe present PhD thesis is devoted to the analysis of a coupled system of nonlinear partial differential equations (PDE), that arises in the modeling of crystal growth from the melt in magnetic fields. The phenomena described by the model are mainly the heat-transfer processes (by conduction, convection and radiation) taking place in a high-temperatures furnace heated electromagnetically, and the motion of a semiconducting melted material subject to buoyancy and applied electromagnetic forces. The model consists of the Navier-Stokes equations for a newtonian incompressible liquid, coupled to the heat equation and the low-frequency approximation of Maxwell''s equations. We propose a mathematical setting for this PDE system, we derive its weak formulation, and we formulate an (initial) boundary value problem that in the mean reflects the complexity of the real-life application. The well-posedness of this (initial) boundary value problem is the mainmatter of the investigation. We prove the existence of weak solutions allowing for general geometrical situations (discontinuous coefficients, nonsmooth material interfaces) and data, the most important requirement being only that the injected electrical power remains finite. For the time-dependent problem, a defect measure appears in the solution, which apart from the fluid remains concentrated in the boundary of the electrical conductors. In the absence of a global estimate on the radiation emitted in the cavity, a part of the defect measure is due to the nonlocal radiation effects. The uniqueness of the weak solution is obtained only under reinforced assumptions: smallness of the input power in the stationary case, and regularity of the solution in the time-dependent case. Regularity properties, such as the boundedness of temperature are also derived, but only in simplified settings: smooth interfaces and temperature-independent coefficients in the case of a stationary analysis, and, additionally for the transient problem, decoupled time-harmonic Maxwell.
GOMES, LAERCIO. "Estudo compreensivo da fotodissociacao do ion OHsub(-) nos haletos alcalinos e sua interacao com centros de cor". reponame:Repositório Institucional do IPEN, 1985. http://repositorio.ipen.br:8080/xmlui/handle/123456789/9850.
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Tese (Doutoramento)
IPEN/T
Instituto de Pesquisas Energeticas e Nucleares - IPEN/CNEN-SP
Olivier, Ezra Jacobus. "Analysis of the extended defects in 3C-SiC". Thesis, Nelson Mandela Metropolitan University, 2008. http://hdl.handle.net/10948/730.
Pełny tekst źródłaHolland, Anthony James. "Analysis of crystal defects by simulation of x-ray section topographs". Thesis, Durham University, 1993. http://etheses.dur.ac.uk/5589/.
Pełny tekst źródłaNakamura, Daisuke. "Bulk growth and extended-defect analysis of high-quality SiC single crystals". 京都大学 (Kyoto University), 2008. http://hdl.handle.net/2433/136293.
Pełny tekst źródłaGarces, Nelson Y. "Analysis of paramagnetic point defects in KH₂PO₄ and KTiOPO₄ crystals". Morgantown, W. Va. : [West Virginia University Libraries], 2000. http://etd.wvu.edu/templates/showETD.cfm?recnum=1778.
Pełny tekst źródłaTitle from document title page. Document formatted into pages; contains xii, 116 p. : ill. Includes abstract. Includes bibliographical references (p. 106-109).
Hung, Wing Wa. "FTIR and XPS of congruent and stoichiometric LiNbO3". HKBU Institutional Repository, 2003. http://repository.hkbu.edu.hk/etd_ra/442.
Pełny tekst źródłaKsiążki na temat "Crystal defect analysis"
Snyder, R. L. Defect and microstructure analysis by diffraction. Oxford: Oxford University Press, 1999.
Znajdź pełny tekst źródłaLarge-angle convergent-beam electron diffraction (LACBED): Applications to crystal defects. Paris: Société Française des Microscopies, 2002.
Znajdź pełny tekst źródłaIntroduction to elasticity theory for crystal defects. Wyd. 2. Singapore: World Scientific, 2016.
Znajdź pełny tekst źródłaIntroduction to elasticity theory for crystal defects. Cambridge: Cambridge University Press, 2012.
Znajdź pełny tekst źródłaE, Cladis P., Palffy-Muhoray P i Saupe Alfred 1925-, red. Dynamics and defects in liquid crystals: A festschrift in honor of Alfred Saupe. Amsterdam: Gordon and Breach Science Publishers, 1998.
Znajdź pełny tekst źródłaYang, Guang. Flux pinning, defect analysis and growth of high temperature superconducting single crystals. Birmingham: University of Birmingham, 1994.
Znajdź pełny tekst źródłaL, Aseev A., red. Clusters of interstitial atoms in silicon and germanium. Berlin: Akademie Verlag, 1994.
Znajdź pełny tekst źródłaOptical absorption of impurities and defects in semiconducting crystals: Hydrogen-like centres. Heidelberg: Springer, 2010.
Znajdź pełny tekst źródłaSpaeth, Johann-Martin. Structural analysis of point defects in solids: An introduction to multiple magnetic resonance spectroscopy. Berlin: Springer-Verlag, 1992.
Znajdź pełny tekst źródłaSpaeth, Johann-Martin. Structural Analysis of Point Defects in Solids: An Introduction to Multiple Magnetic Resonance Spectroscopy. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992.
Znajdź pełny tekst źródłaCzęści książek na temat "Crystal defect analysis"
Jianfa, Jing, Wang Shuai, Chen Feng, Yang Lingzhi i Fu Baoquan. "Analysis of Coarse Crystal Defect During Rolling of 3J1A Alloy". W The Minerals, Metals & Materials Series, 839–46. Cham: Springer Nature Switzerland, 2023. http://dx.doi.org/10.1007/978-3-031-22524-6_77.
Pełny tekst źródłaBassignana, I. C., D. A. Macquistan i D. A. Clark. "X-Ray Topography and TEM Study of Crystal Defect Propagation in Epitaxially Grown AlGaAs Layers on GaAs(001)". W Advances in X-Ray Analysis, 507–17. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3744-1_56.
Pełny tekst źródłaBhavana, A., Puspa Devi Pukhrambam, Abinash Panda i Malek G. Daher. "Design and Analysis of T-Shaped Defect-Based Photonic Crystal Waveguide for Application of Optical Interconnect". W Lecture Notes in Electrical Engineering, 45–53. Singapore: Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-99-4495-8_2.
Pełny tekst źródłaHashizume, Takashi, Atsushi Saiki i Shogo Miwa. "Crystal Structure of the Defect Pyrochlore Potassium Tantalate on Ion-Exchanging Dipping in Sodium Aqueous Solution by Rietveld Analysis". W Ceramic Transactions Series, 137–45. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2018. http://dx.doi.org/10.1002/9781119494096.ch14.
Pełny tekst źródłaBenediktovitch, Andrei, Ilya Feranchuk i Alexander Ulyanenkov. "X-Ray Diffraction from Crystals with Defects". W Theoretical Concepts of X-Ray Nanoscale Analysis, 217–63. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-38177-5_6.
Pełny tekst źródłaHolba, Pavel, i David Sedmidubský. "Crystal Defects and Nonstoichiometry Contributions to Heat Capacity of Solids". W Hot Topics in Thermal Analysis and Calorimetry, 53–74. Dordrecht: Springer Netherlands, 2012. http://dx.doi.org/10.1007/978-90-481-3150-1_3.
Pełny tekst źródłaGao, Bing, i Koichi Kakimoto. "Numerical Analysis of Impurities and Dislocations During Silicon Crystal Growth for Solar Cells". W Defects and Impurities in Silicon Materials, 241–72. Tokyo: Springer Japan, 2015. http://dx.doi.org/10.1007/978-4-431-55800-2_5.
Pełny tekst źródłaKitano, Tomohisa, i Kazuko Ikeda. "Analysis of Defects in Devices and Silicon Crystals in Production Lines". W Ultraclean Surface Processing of Silicon Wafers, 286–302. Berlin, Heidelberg: Springer Berlin Heidelberg, 1998. http://dx.doi.org/10.1007/978-3-662-03535-1_20.
Pełny tekst źródłaKato, Tomohisa, Tomonori Miura, Keisuke Wada, Eiji Hozomi, Hiroyoshi Taniguchi, Shin Ichi Nishizawa i Kazuo Arai. "Defect and Growth Analysis of SiC Bulk Single Crystals with High Nitrogen Doping". W Materials Science Forum, 239–42. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-442-1.239.
Pełny tekst źródłaWang, Ke, Ren Ke Kang, Zhu Ji Jin i Dong Ming Guo. "Theoretical Analysis and Experimental Verification of Triangular Fracture Defects of MgO Single Crystal Substrate in Lapping or Polishing Process". W Optics Design and Precision Manufacturing Technologies, 739–44. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-458-8.739.
Pełny tekst źródłaStreszczenia konferencji na temat "Crystal defect analysis"
Gamare, Karuna, i Ranjan Bala Jain. "Performance analysis of 2D photonic crystal with line defect". W INTERNATIONAL CONFERENCE ON INVENTIVE MATERIAL SCIENCE APPLICATIONS : ICIMA 2019. AIP Publishing, 2019. http://dx.doi.org/10.1063/1.5131598.
Pełny tekst źródłaLiu, Danyu, Haroldo T. Hattori, Lan Fu, Hoe Tan i Chennupati Jagadish. "Analysis of multi-wavelength photonic crystal single-defect laser arrays". W 2010 23rd Annual Meeting of the IEEE Photonics Society (Formerly LEOS Annual Meeting). IEEE, 2010. http://dx.doi.org/10.1109/photonics.2010.5698980.
Pełny tekst źródłaRieske, Ralf, Rene Landgraf i Klaus-Jurgen Wolter. "Novel method for crystal defect analysis of laser drilled TSVs". W 2009 IEEE 59th Electronic Components and Technology Conference (ECTC 2009). IEEE, 2009. http://dx.doi.org/10.1109/ectc.2009.5074155.
Pełny tekst źródłaSebastian, Elizabeth, Jie Zhu i Zhi Qiang Mo. "Si Nano-Crystal Size and Structural Defect Characterization Using Electron Microscopes". W 2019 IEEE 26th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). IEEE, 2019. http://dx.doi.org/10.1109/ipfa47161.2019.8984809.
Pełny tekst źródłaKittler, Martin, Tzanimir Arguirov, Reiner Schmid, Winfried Seifert i Teimuraz Mchedlidze. "Photoluminescence and EBIC for Process Control and Failure Analysis in Si-Based Photovoltaics". W ISTFA 2010. ASM International, 2010. http://dx.doi.org/10.31399/asm.cp.istfa2010p0137.
Pełny tekst źródłaShuting, Chen, Li Lihong, Du Anyan i Hua Younan. "Study of Si Crystal Defects by Chemical Preferential Etching and Its Application on Si Dislocation Defects Caused by Laser Spike Annealing (LSA)". W ISTFA 2012. ASM International, 2012. http://dx.doi.org/10.31399/asm.cp.istfa2012p0293.
Pełny tekst źródłaKalra, Yogita, Nishant Shankhwar i Ravindra Sinha. "Dielectric zero-index metamaterial filled photonic crystal defect waveguide: design and analysis". W Metamaterials, Metadevices, and Metasystems 2018, redaktorzy Nader Engheta, Mikhail A. Noginov i Nikolay I. Zheludev. SPIE, 2018. http://dx.doi.org/10.1117/12.2320904.
Pełny tekst źródłaLee, Sang Hun, Jeong Won Kang, Hyun Jung Oh i Do Hyun Kim. "Simulation analysis for the ring patterned void defect in silicon mono crystal". W 2010 IEEE 10th Conference on Nanotechnology (IEEE-NANO). IEEE, 2010. http://dx.doi.org/10.1109/nano.2010.5697823.
Pełny tekst źródłaMartinez, R., S. Amirhaghi, B. Smith, A. Mowbray, Mark J. Furlong, J. P. Flint, G. Dallas, G. Meshew i J. Trevethan. "Towards the production of very low defect GaSb and InSb substrates: bulk crystal growth, defect analysis and scaling challenges". W SPIE OPTO, redaktor Manijeh Razeghi. SPIE, 2013. http://dx.doi.org/10.1117/12.2005130.
Pełny tekst źródłaLandgraf, R., R. Rieske, A. N. Danilewsky i K. J. Wolter. "Laser drilled through silicon vias: Crystal defect analysis by synchrotron x-ray topography". W 2008 2nd Electronics Systemintegration Technology Conference. IEEE, 2008. http://dx.doi.org/10.1109/estc.2008.4684492.
Pełny tekst źródłaRaporty organizacyjne na temat "Crystal defect analysis"
Yazici, R., i D. Kalyon. Microstrain and Defect Analysis of CL-20 Crystals by Novel X-Ray Methods. Fort Belvoir, VA: Defense Technical Information Center, kwiecień 1996. http://dx.doi.org/10.21236/ada311738.
Pełny tekst źródłaKirchhoff, Helmut, i Ziv Reich. Protection of the photosynthetic apparatus during desiccation in resurrection plants. United States Department of Agriculture, luty 2014. http://dx.doi.org/10.32747/2014.7699861.bard.
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