Gotowe bibliografie tematyczne / Conductance quantization

Gotowa bibliografia na temat „Conductance quantization”

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Data publikacji: 4 czerwca 2021
Data aktualizacji: 1 lutego 2022

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Artykuły w czasopismach na temat "Conductance quantization"

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Batra, Inder P. "Origin of conductance quantization". Surface Science 395, nr 1 (styczeń 1998): 43–45. http://dx.doi.org/10.1016/s0039-6028(97)00601-8.

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Sorée, Bart, Wim Magnus i Wim Schoenmaker. "Conductance quantization and dissipation". Physics Letters A 310, nr 4 (kwiecień 2003): 322–28. http://dx.doi.org/10.1016/s0375-9601(03)00351-7.

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Nöckel, J. U. "Conductance quantization and backscattering". Physical Review B 45, nr 24 (15.06.1992): 14225–30. http://dx.doi.org/10.1103/physrevb.45.14225.

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Cosby, Ronald M., Dustin R. Humm i Yong S. Joe. "Nanoelectronics using conductance quantization". Journal of Applied Physics 83, nr 7 (kwiecień 1998): 3914–16. http://dx.doi.org/10.1063/1.366626.

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SARMA, S. DAS, i SONG HE. "THEORY OF ELECTRON TRANSPORT THROUGH QUANTUM CONSTRICTIONS IN SEMICONDUCTOR NANOSTRUCTURES". International Journal of Modern Physics B 07, nr 19 (30.08.1993): 3375–404. http://dx.doi.org/10.1142/s0217979293003279.

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Detailed numerical results are presented for the calculated conductance of quantum point contacts, or, narrow constrictions between high mobility two-dimensional electron systems fabricated on semiconductor nanostructures. The conductance is calculated from the two-terminal multichannel transmission matrix formalism using the recursive single-particle Green’s function technique. The Green’s functions are obtained recursively for a tight-binding two-dimensional disordered Anderson lattice model representing the constriction. The conductance is calculated as a function of the shape and the size of the constriction (i.e., its geometry), the temperature, and, the elastic disorder in the system. Our main results, which are consistent with experimental findings, are: (1) increase of elastic scattering destroys the quantization; (2) for a fixed amount of disorder (i.e., for a given value of the elastic mean free path), the conductance quantization is poorer for longer constrictions; (3) in general, the quantization is poorer for higher quantum numbers or subbands; (4) constrictions with sharper geometry have sharper quantization, but may have quantum resonances associated with their sharp corners; (5) the quantum resonances (in sharp constrictions) are suppressed for shorter constriction lengths and at higher temperatures; (6) in general, higher temperatures lower the quantization quality by smoothening out the conductance except for sharp constrictions where at the lowest temperatures the quantum resonances show up, adversely affecting the quantization; (7) in smooth or adiabatic constrictions, the conductance quantization is smooth (but not extremely accurate) but, adiabaticity is not a necessary requirement for conductance quantization; (8) in general, geometry, finite temperature, and finite disorder effects do not allow better than 1% type accuracy in the quantization (compared with integral multiples of 2e2/h) even in the best of circumstances; (9) increase of elastic disorder smoothly takes the system from a conductance quantized regime to the regime of universal conductance fluctuations; and, (10) inelastic scattering, which we treat only in a very crude phenomenological model, behaves similar to thermal effects in broadening and smearing the sharpness of the conductance quantization. We also discuss the effect of an external magnetic field on the conductance quantization phenomenon. Some results are given for the conductance of two constrictions in series.
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Takayanagi, Kunio, Yukihito Kondo i Hideo Ohnishi. "Conductance Quantization of Gold Nanowire". Materia Japan 40, nr 12 (2001): 1000. http://dx.doi.org/10.2320/materia.40.1000.

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Bascones, E., G. Gómez-Santos i J. J. Sáenz. "Statistical significance of conductance quantization". Physical Review B 57, nr 4 (15.01.1998): 2541–44. http://dx.doi.org/10.1103/physrevb.57.2541.

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Krompiewski, S. "Conductance quantization in ferromagnetic nanowires". Journal of Physics: Condensed Matter 12, nr 7 (3.02.2000): 1323–28. http://dx.doi.org/10.1088/0953-8984/12/7/315.

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Kivelson, S., i S. A. Trugman. "Quantization of the Hall conductance from density quantization alone". Physical Review B 33, nr 6 (15.03.1986): 3629–35. http://dx.doi.org/10.1103/physrevb.33.3629.

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Ooka, Yutaka, Teruo Ono i Hideki Miyajima. "Conductance quantization in ferromagnetic Ni nanowire". Journal of Magnetism and Magnetic Materials 226-230 (maj 2001): 1848–49. http://dx.doi.org/10.1016/s0304-8853(00)00881-7.

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Rozprawy doktorskie na temat "Conductance quantization"

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Zheng, Tao. "Study of Conductance Quantization by Cross-Wire Junction". Thesis, University of North Texas, 2004. https://digital.library.unt.edu/ark:/67531/metadc5540/.

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The thesis studied quantized conductance in nanocontacts formed between two thin gold wires with one of the wires coated by alkainthiol self assembly monolayers (SAM), by using the cross-wire junction. Using the Lorenz force as the driving force, we can bring the two wires in contact in a controlled manner. We observed conductance with steps of 2e2 / h. The conductance plateaus last several seconds. The stability of the junction is attributed to the fact that the coating of SAM improves the stability and capability of the formed contact.
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Lehmann, Hauke [Verfasser]. "Spin-resolved conductance quantization in InAs nanodevices / Hauke Lehmann". München : Verlag Dr. Hut, 2013. http://d-nb.info/103304170X/34.

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Nishi, Yusuke. "Nonpolar Resistive Switching Based on Quantized Conductance in Transition Metal Oxides". Kyoto University, 2019. http://hdl.handle.net/2433/242544.

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Lind, Hans. "Spin Polarization and Conductance in Quantum Wires under External Bias Potentials". Thesis, Linköping University, Department of Physics, Chemistry and Biology, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-54514.

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We study the spin polarization and conductance in infinitely long quasi one-dimensionalquantum wires under various conditions in an attempt to reproduce and to explain some of theanomalous conductance features as seen in various experiments. In order to accomplish thistask we create an idealized model of a quantum wire in a split-gate semiconductorheterostructure and we perform self-consistent Hartree-Fock calculations to determine theelectron occupation and spin polarization. Based on those results we calculate the currentthrough the wire as well as the direct and differential conductances. In the frame of theproposed model the results show a high degree of similarity to some of the experimentallyobserved conductance features, particularly the 0.25- and 0.85-plateaus. These results lead usto the conclusion that those conductance anomalies are in fact caused by the electronsspontaneously polarizing due to electron-electron interactions when an applied potentialdrives a current through the wire.

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Clarke, Warrick Robin Physics Faculty of Science UNSW. "Quantum interaction phenomena in p-GaAs microelectronic devices". Awarded by:University of New South Wales. School of Physics, 2006. http://handle.unsw.edu.au/1959.4/32259.

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In this dissertation, we study properties of quantum interaction phenomena in two-dimensional (2D) and one-dimensional (1D) electronic systems in p-GaAs micro- and nano-scale devices. We present low-temperature magneto-transport data from three forms of low-dimensional systems 1) 2D hole systems: in order to study interaction contributions to the metallic behavior of 2D systems 2) Bilayer hole systems: in order to study the many body, bilayer quantum Hall state at nu = 1 3) 1D hole systems: for the study of the anomalous conductance plateau G = 0.7 ???? 2e2/h The work is divided into five experimental studies aimed at either directly exploring the properties of the above three interaction phenomena or the development of novel device structures that exploit the strong particle-particle interactions found in p-GaAs for the study of many body phenomena. Firstly, we demonstrate a novel semiconductor-insulator-semiconductor field effect transistor (SISFET), designed specifically to induced 2D hole systems at a ????normal???? AlGaAs-on-GaAs heterojunction. The novel SISFETs feature in our studies of the metallic behavior in 2D systems in which we examine temperature corrections to ????xx(T) and ????xy(T) in short- and long-range disorder potentials. Next, we shift focus to bilayer hole systems and the many body quantum Hall states that form a nu = 1 in the presence of strong interlayer interactions. We explore the evolution of this quantum Hall state as the relative densities in the layers is imbalanced while the total density is kept constant. Finally, we demonstrate a novel p-type quantum point contact device that produce the most stable and robust current quantization in a p-type 1D systems to date, allowing us to observed for the first time the 0.7 structure in a p-type device.
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Brand, Janetta Debora. "A quantum hall effect without landau levels in a quasi one dimensional system". Thesis, Stellenbosch : Stellenbosch University, 2012. http://hdl.handle.net/10019.1/71643.

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Thesis (MSc)--Stellenbosch University, 2012.
ENGLISH ABSTRACT: The experimental observation of the quantum Hall effect in a two-dimensional electron gas posed an intriguing question to theorists: Why is the quantization of conductance so precise, given the imperfections of the measured samples? The question was answered a few years later, when a connection was uncovered between the quantum Hall effect and topological quantities associated with the band structure of the material in which it is observed. The Hall conductance was revealed to be an integer topological invariant, implying its robustness to certain perturbations. The topological theory went further than explaining only the usual integer quantum Hall effect in a perpendicular magnetic field. Soon it was realized that it also applies to certain systems in which the total magnetic flux is zero. Thus it is possible to have a quantized Hall effect without Landau levels. We study a carbon nanotube in a magnetic field perpendicular to its axial direction. Recent studies suggest that the application of an electric field parallel to the magnetic field would induce a gap in the electronic spectrum of a previously metallic carbon nanotube. Despite the quasi onedimensional nature of the carbon nanotube, the gapped state supports a quantum Hall effect and is associated with a non zero topological invariant. This result is revealed when an additional magnetic field is applied parallel to the axis of the carbon nanotube. If the flux due to this magnetic field is varied by one flux quantum, exactly one electron is transported between the ends of the carbon nanotube.
AFRIKAANSE OPSOMMING: Die eksperimentele waarneming van die kwantum Hall effek in ’n twee-dimensionele elektron gas laat ’n interessante vraag aan teoretiese fisikuste: Waarom sou die kwantisasie van die geleiding so presies wees al bevat die monsters, waarop die meetings gedoen word, onsuiwerhede? Hierdie vraag word ’n paar jaar later geantwoord toe ’n konneksie tussen die kwantum Hall effek en topologiese waardes, wat verband hou met die bandstruktuur van die monster, gemaak is. Dit is aan die lig gebring dat die Hall geleiding ’n heeltallige topologiese invariante is wat die robuustheid teen sekere steurings impliseer. Die topologiese teorie verduidelik nie net die gewone kwantum Hall effek wat in ’n loodregte magneetveld waargeneem word nie. Dit is ook moontlik om ’n kwantum Hall effek waar te neem in sekere sisteme waar die totale magneetvloed nul is. Dit is dus moontlik om ’n gekwantiseerde Hall effek sonder Landau levels te hˆe. Ons bestudeer ’n koolstofnanobuis in ’n magneetveld loodreg tot die aksiale rigting. Onlangse studies dui daarop dat die toepassing van ’n elektriese veld parallel aan die magneetveld ’n gaping in die elektroniese spektrum van ’n metaliese koolstofnanobuis induseer. Ten spyte van die een-dimensionele aard van die koolstofnanobuis ondersteun die gapings-toestand steeds ’n kwantum Hall effek en hou dit verband met ’n nie-nul topologiese invariante. Hierdie resultaat word openbaar wanneer ’n bykomende magneetveld parallel tot die as van die koolstofnanobuis toegedien word. Indien die vloed as gevolg van hierdie magneetveld met een vloedkwantum verander word, word presies een elektron tussen die twee kante van die koolstofnanobuis vervoer.
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Sattar, Abdul. "Electrical Characterization of Cluster Devices". Thesis, University of Canterbury. Physics and Astronomy, 2011. http://hdl.handle.net/10092/6677.

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The aim of the study presented in this thesis is to explore the electrical and physical properties of films of tin and lead clusters. Understanding the novel conductance properties of cluster films and related phenomenon such as coalescence is important to fabricate any cluster based devices. Coalescence is an important phenomenon in metallic cluster films. Due to coalescence the morphology of the films changes with time which changes their properties and could lead to failure in cluster devices. Coalescence is studied in Sn and Pb cluster films deposited on Si$_3$N$_4$ surfaces using Ultra High Vacuum (UHV) cluster deposition system. The conductance of the overall film is linked to the conductance of the individual necks between clusters by simulations. It is observed that the coalescence process in Sn and Pb films follows a power law in time with an exponent smaller than reported in literature. These results are substantiated by the results from previous experimental and Kinetic Monte Carlo (KMC) simulation studies at UC. Percolating films of Sn show unique conductance properties. These films are characterized using various electrode configurations, applied voltages and temperatures. The conductance measurements are performed by depositing clusters on prefabricated gold electrodes on top of Si$_3$N$_4$ substrates. Sn cluster films exhibit a variety of conductance behaviours during and after the end of deposition. It is observed that the evolution of conductance during the onsets at percolation threshold is dependent on the film morphology. Samples showing difference responses in onset also behave differently after the end of deposition. Therefore all samples were categorized according to their onset behaviour. After the end of deposition, when a bias voltage is applied, the conductance of Sn films steps up and down between various well-defined conductance levels. It is also observed that in many cases the conductance levels between which these devices jump are close to integral multiples of the conductance quantum. There are many possible explanations for the steps in conductance. One of the explanations is formation and breaking of conducting paths in the cluster films by electric field induced evaporation and electromigration respectively. The stepping behaviour is similar to that in non-volatile memory devices and hence very interesting to explore due to potential applications.
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Ly, Ousmane. "Microscopie à grille locale comme outil d’extraction des propriétés électroniques locales en transport quantique". Thesis, Strasbourg, 2017. http://www.theses.fr/2017STRAE022/document.

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La technique de la microscopie à grille de balayage (SGM) consiste à mesurer la conductance d'un gaz bidimensionnel d'électrons (2DEG) sous l'influence d'une pointe balayant la surface de l'échantillon. Dans ce travail, une approche analytique complétée par des simulations numériques est développée pour étudier la relation entre les mesures SGM et les propriétés électroniques locales dans des systèmes mésoscopiques. La correspondance entre la réponse SGM et la densité locale partielle (PLDOS) est étudiée pour un contact quantique entouré d’un 2DEG en présence ou en absence de désordre, pour une pointe perturbative ou non perturbative. Une correspondance SGM-PLDOS parfaite est trouvée pour des transmissions entières et des pointes locales. La dégradation de la correspondance en dehors de cette situation est étudiée. D’autre part, la liaison entre la réponse SGM et la transformée de Hilbert de la densité locale est discutée. Pour étudier le rôle de la force de la pointe sur la conductance SGM, une formule analytique donnant la conductance totale est obtenue. Dans le cas d'une pointe à taille finie nous proposons une méthode basée sur les fonctions de Green permettant de calculer la conductance en connaissant les propriétés non-perturbées. En plus, nous avons étudié la dépendance des branches de la PLDOS en fonction de l’énergie de Fermi
The scanning gate microscopy (SGM) technique consists in measuring the conductance of a two dimensional electron gas (2DEG) under the influence of a scanning tip. In this work, an analytical approach complemented by numerical simulations is developed to study the connection between SGM measurements and local electronic properties in mesoscopic devices. The connection between the SGM response and the partial local density of states (PLDOS) is studied for the case of a quantum point contact surrounded by clean or disordered 2DEG for perturbative or non-perturbative, local or extended tips. An SGM-PLDOS correspondence is found for integer transmissions and local tips. The degradation of this correspondence out of these conditions is studied. Moreover, a presumed link between the SGM response and the Hilbert transform of the LDOS is discussed. To study the role of the tip strength, an analytical formula giving the full conductance in the case of local tips is obtained. Furthermore, a Green function method enabling to calculate the quantum conductance in the presence of a finite size tip in terms of the unperturbed properties is proposed. Finally the dependence of the PLDOS branches on the Fermi energy is studied
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Lagos, Paredes Maureen Joel. "Efeitos estruturais na quantização da condutância de nanofios metálicos". [s.n.], 2007. http://repositorio.unicamp.br/jspui/handle/REPOSIP/259172.

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Orientador: Daniel Mario Ugarte
Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin
Made available in DSpace on 2018-08-08T07:13:58Z (GMT). No. of bitstreams: 1 LagosParedes_MaureenJoel_M.pdf: 3881181 bytes, checksum: 517e8507ccdf35f0fa7a7f9fcb4b3b84 (MD5) Previous issue date: 2007
Resumo: O estudo de fios metálicos de tamanho atômico (NF's) tem atraído grande interesse devido aos novos efeitos químicos e físicos neles observados. Entre esses novos fenômenos podemos destacar a quantização da condutância, efeito que deve ser fundamental no desenho dos novos nanodispositivos eletrônicos. NF's são usualmente gerados através de um procedimento simples de deformação mecânica: duas superfícies metálicas são colocadas em contato e depois afastadas. Nos últimos estágios do estiramento antes da ruptura, um fio de alguns átomos de diâmetro é gerado enquanto a condutância é medida. Os NF's têm sido estudados por diferentes grupos e, em diversas condições de temperatura (4 - 300 K) e pressão (de ambiente a UHV). Os resultados apresentam importantes variações e, têm gerado interpretações muito controversas. Devemos enfatizar que muitas interpretações têm sido feitas sem considerar que a deformação estrutural dos NF's deve depender fortemente da temperatura. Nesta tese estudamos as propriedades estruturais e eletrônicas NF's e, em particular analisamos a influência de efeitos térmicos no arranjo atômico, e sua manifestação na condutância. A estrutura dos NF's foi estudada por microscopia eletrônica de transmissão de alta resolução resolvidas no tempo. A condutância foi medida utilizando um sistema de quebra controlada de junções operado em ultra-alto-vácuo. Os experimentos foram realizados a ~150 e 300 K. Nossos resultados mostraram que, à temperatura ambiente os NF's são sempre cristalinos e livre de defeitos nas regiões mais finas; e deformam unicamente ao longo dos eixos cristalográficos [111], [100] e [110]. A baixa temperatura duas importantes diferenças foram observadas: (i) NF's de ouro apresentam defeitos, principalmente falhas de empilhamento e maclas. (ii) NF's alongados na direção [110] evoluem em cadeias atômicas, de comportamento mecânico muito diferente da temperatura ambiente, onde quebram abruptamente. Segundo as imagens de microscopia eletrônica, discordâncias parciais (Shockley) geram falhas de empilhamento; e cadeias de átomos suspensos são observados a ~150 e 300 K. Histogramas globais de condutância adquiridos a baixa temperatura revelaram: (i) aumento da intensidade do pico ~1 Go; (ii) leve diminuição da condutância devido ao aumento de defeitos; e (iii) a existência de uma sub-estrutura no pico ~2 Go, indicando a formação de dois arranjos atômicos estáveis. Resumidamente, nossos resultados mostram que a formação de defeitos é um evento freqüente a ~150 K. Provavelmente, mais defeitos na estrutura devem acontecer para temperaturas menores (4 - 10 K). Portanto, uma importante mudança na evolução da condutância durante a elongação de NF's deve ser esperado a baixa temperatura. Assim, a comparação direta de medidas de transporte de NF's realizadas a diferentes temperaturas pode levar a sérias discrepâncias. Esperamos ter contribuído a melhorar a compreensão e interpretação de experimentos de transporte realizados em diferentes condições, de modo tal, a gerar um modelo único e coerente que explique as propriedades físicas de NF's metálicos
Abstract: The study of atomic-size metal nanowires (NW's) is attracting a great interest due to occurrence a novel physical and chemical phenomena. Among these new phenomena, we can mention conductance quantization that will certainly influence the design of nanodevices. NW's are usually generated by means of a simple procedure: two metallic surfaces are put into contact and, then retracted. Just before rupture atomic-size NW's are formed, and the conductance is measured during the wire elongation. The interpretation of the results is troublesome, because conductance is measured during the modification of the atomic structure. This kind of experimental study has been performed by many research groups and, a quite wide range of temperatures (4 - 300 K) and vacuum condition have been used (from ambient to UHV). In fact, the results display significant variation, what has generated several controversial interpretations. It must be emphasized that many models have been derived without taking into account that the NW structural deformation should be significantly dependent on temperature. In this Thesis research work, we have studied the structural and electronic properties of gold NW's, in particular addressing how thermal effects influence the atomistic aspects of the NW deformation and how this influences the quantum conductance behavior. The structure of NW's has been studied by means of time-resolved high resolution transmission electron microscopy; the NWs transport measurements were based on a mechanically controlled break junction operated in ultra-high-vacuum. The experiments were performed at ~150 and 300 K. Our results have shown that at room temperature the atomic-size NW's. are always crystalline and free of defects, and the atomic structure is spontaneously deformed such that one of the [111]/[100]/[110] crystallographic axis becomes approximately parallel to the stretching direction. Low temperature observations revealed two important differences: i) Au NWs show extended defects, mainly stacking faults and, twinning; ii) NWs elongated along the [110] axis evolve to suspended atomic chains, while at room temperature they break abruptly. Partial Schockley dislocations generate the staking faults; suspended atoms chains are both observed at ~150 and 300 K. The global histograms of conductance at ~150 K showed that: i) a increase of the 1 Go peak intensity; ii) slight reduction of the NWs conductance due to scattering at defects and; iii) the peak at ~2 Go shows a sub structure, what is due to the occurrence of two different atomic arrangements with similar conductance. Briefly, our results revealed that the formation of defects is very frequent in NWs generated at ~150 K; the occurrence of more defects should be expected when NWs are studied at cryogenic temperatures. Then, a significant modification of the NW conductance behavior should be expected at low temperature. In these terms, the direct comparison of conductance measurements realized at different temperature regimes can lead to serious discrepancies. We hope that this work contribute to improve the interpretation and understanding of NW transport studies in order to develop a coherent and complete model that explain the physical properties of atomic-size metal NWs
Mestrado
Física da Matéria Condensada
Mestre em Física
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Chen, Peng-Yu, i 陳鵬宇. "Room-temperature conductance quantization at a mechanically controlled break junction". Thesis, 2004. http://ndltd.ncl.edu.tw/handle/36376219839057070566.

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碩士
輔仁大學
物理學系
92
Abstract Room-temperature conductance quantization at a mechanically controlled break junction We have studied conductance quantization through point-contact junctions of metal wires using a mechanically controlled wire-breaking device in ambient condition. This experiment demonstrates that the conduction through a nano constriction between two electron reservoirs can be treated by Landauer's formula,where G0 is the unitary conductance 2e^2/h , n denotes each possible conduction channel, and T is the transmission coefficient for each channel at the junction. The Landauer’s formula states a specific quantum size effect: T either equal to 1 or 0, in a ballistic constriction, e.g., the physical dimension of the confinement is much smaller than the electron mean free path. We have tested quantized conductance with various metals such as Au, Pt, Cu, and Ag. For Pt junctions, the standard deviation of a quantized conductance was found to be the smallest. This could be explained by a lower Pt diffusivity at room temperature. The junctions of Au and Pt also behaved differently as stretched. The conductance of Au tended to drop stepwise to the lowest quantized G whereas the Pt junctions often drifted back to a higher G value. Keyword：conductance、ballistic transport、Landauer's formula、 Mechanically Controlled Break Junction、nanowire
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Książki na temat "Conductance quantization"

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Burton, J. D., i E. Y. Tsymbal. Magnetoresistive phenomena in nanoscale magnetic contacts. Redaktorzy A. V. Narlikar i Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533046.013.18.

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This article examines magnetoresistive phenomena in nano- and atomic-size ferromagnetic metal contacts. In particular, it considers how magnetization affects the flow of electrical current in ferromagnetic materials by focusing on two major categories of magnetoresistive phenomena: the ‘spin-valve’, where the flow of spin-polarized electrical current is affected by an inhomogeneous magnetization profile, and anisotropic magnetoresistance (AMR), which involves the anisotropy of electrical transport properties with respect to the orientation of the magnetization. The article first provides an overview of ballistic transport and conductance quantization before discussing domain-wall magnetoresistance at the nanoscale. It also describes AMR in magnetic nanocontacts as well as tunnelling anisotropic magnetoresistance in broken contacts.
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van Houselt, Arie, i Harold J. W. Zandvliet. Self-organizing atom chains. Redaktorzy A. V. Narlikar i Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533046.013.9.

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This article examines the intriguing physical properties of nanowires, with particular emphasis on self-organizing atom chains. It begins with an overview of the one-dimensional free electron model and some interesting phenomena of one-dimensional electron systems. It derives an expression for the 1D density of states, which exhibits a singularity at the bottom of the band and extends the free-electron model, taking into consideration a weak periodic potential that is induced by the lattice. It also describes the electrostatic interactions between the electrons and goes on to discuss two interesting features of 1D systems: the quantization of conductance and Peierls instability. Finally, the article presents the experimental results of a nearly ideal one-dimensional system, namely self-organizing platinum atom chains on a Ge(001) surface, focusing on their formation, quantum confinement between the Pt chains and the occurrence of a Peierls transition within the chains.
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Części książek na temat "Conductance quantization"

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Magnus, Wim, i Wim Schoenmaker. "Conductance Quantization". W Springer Series in Solid-State Sciences, 225–44. Berlin, Heidelberg: Springer Berlin Heidelberg, 2002. http://dx.doi.org/10.1007/978-3-642-56133-7_16.

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García, N., J. L. Costa-Krämer, A. Gil, M. I. Marqués i A. Correia. "Conductance Quantization in Metallic Nanowires". W Mesoscopic Electron Transport, 581–616. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-015-8839-3_16.

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Poncharal, Ph, St Frank, Z. L. Wang i W. A. de Heel. "Conductance quantization in multiwalled carbon nanotubes". W The European Physical Journal D, 77–79. Berlin, Heidelberg: Springer Berlin Heidelberg, 1999. http://dx.doi.org/10.1007/978-3-642-88188-6_15.

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Ruitenbeek, J. M., J. M. Krans, H. E. Brom i L. J. Jongh. "Conductance Quantization in Metals: Some Unsolved Problems". W Nanowires, 251–61. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-015-8837-9_19.

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Nawrocki, Waldemar. "Quantization of Electrical and Thermal Conductance in Nanostructures". W Introduction to Quantum Metrology, 157–72. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-15669-9_7.

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Nawrocki, W., i M. Wawrzyniak. "Conductance Quantization in Magnetic and Nonmagnetic Metallic Nanostructures". W Nanostructured Magnetic Materials and their Applications, 383–92. Dordrecht: Springer Netherlands, 2004. http://dx.doi.org/10.1007/978-1-4020-2200-5_30.

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Nawrocki, Waldemar. "Quantization of Electrical and Thermal Conductance in Nanostructures". W Introduction to Quantum Metrology, 185–202. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-19677-6_7.

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Olin, H., J. L. Costa-Krämer, N. Garcia, S. E. Kubatkin i T. Claeson. "Conductance Quantization in Gold Nanowires at Low Temperature". W Nanowires, 237–42. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-015-8837-9_17.

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de Haan, S., A. Lorke, J. P. Kotthaus, W. Wegscheider i M. Bichler. "Conductance quantization in an array of ballistic constrictions". W Springer Proceedings in Physics, 755–56. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_356.

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Zhou, C., C. J. Muller, M. R. Deshpande, J. McCormack i M. A. Reed. "Conductance Quantization in Fully Integrated Break Junctions at Room Temperature". W Nanowires, 263–74. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-015-8837-9_20.

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Streszczenia konferencji na temat "Conductance quantization"

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Poulain, Christophe, Guillaume Jourdan, Alexis Peschot i Vincent Mandrillon. "Contact Conductance Quantization in a MEMS Switch". W 2010 IEEE Holm Conference on Electrical Contacts (Holm 2010). IEEE, 2010. http://dx.doi.org/10.1109/holm.2010.5619518.

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Duan, Qingxi, Jingxian Li, Jiadi Zhu, Teng Zhang, Jingjing Yang, Yuchao Yang i Ru Huang. "Conductance quantization in oxide-based resistive switching devices". W 2019 China Semiconductor Technology International Conference (CSTIC). IEEE, 2019. http://dx.doi.org/10.1109/cstic.2019.8755752.

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Zota, Cezar B., Lars-Erik Wernersson i Erik Lind. "Conductance quantization in quasi-ballistic InGaAs nanowire MOSFETs". W 2015 73rd Annual Device Research Conference (DRC). IEEE, 2015. http://dx.doi.org/10.1109/drc.2015.7175667.

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NAWROCKI, W., i M. WAWRZYNIAK. "CONDUCTANCE QUANTIZATION IN MAGNETIC AND NONMAGNETIC METALLIC NANOWIRES". W Reviews and Short Notes to NANOMEETING-2001. WORLD SCIENTIFIC, 2001. http://dx.doi.org/10.1142/9789812810076_0043.

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NAWROCKI, W., M. WAWRZYNIAK, B. SUSŁA i J. BARNAŚ. "QUANTIZATION OF ELECTRICAL CONDUCTANCE IN METAL-SEMICONDUCTOR NANOCONTACTS". W Proceedings of the International Conference on Nanomeeting 2007. WORLD SCIENTIFIC, 2007. http://dx.doi.org/10.1142/9789812770950_0127.

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Garcia-Martin, Antonio, Luis S. Froufe-Perez i Juan J. Saenz. "Conductance quantization in nanoscale wires with surface disorder". W Microtechnologies for the New Millennium 2005, redaktorzy Paolo Lugli, Laszlo B. Kish i Javier Mateos. SPIE, 2005. http://dx.doi.org/10.1117/12.608225.

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Takayanagi, Kunio, Yoshifumi Oshima i Yoshihiko Kurui. "Conductance quantization of gold nanowires as a ballistic conductor". W 2009 IEEE International Interconnect Technology Conference - IITC. IEEE, 2009. http://dx.doi.org/10.1109/iitc.2009.5090337.

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Scappucci, G., L. Di Gaspare, E. Giovine, A. Notargiacomo, R. Leoni i F. Evangelisti. "Conductance Quantization in Schottky-gated Si/SiGe Quantum Point Contacts". W PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2730107.

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Sune, J., E. Miranda, D. Jimenez, X. Saura, S. Long, L. Ming, J. M. Rafi i F. Campabadal. "Threshold switching and conductance quantization in Al/HfO2/Si(p) structures". W 2012 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2012. http://dx.doi.org/10.7567/ssdm.2012.b-6-3.

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Tavakoli, Adib, Kunal Lulla, Thierry Crozes, Eddy Collin i Olivier Bourgeois. "Measurement of heat conduction in a ballistic 1D phonon waveguide: no quantization of the thermal conductance". W 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2018. http://dx.doi.org/10.1109/nano.2018.8626298.

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