Rozprawy doktorskie na temat „Computer Modelling - Silicon Solar Cells”

>Magister Scientiae - MSc<br>Amorphous silicon carbide (a-SiC) is a versatile material due to its interesting mechanical, chemical and optical properties that make it a candidate for application in solar cell technology. As a-SiC stoichiometry can be tuned over a large range, consequently is its bandgap. In this thesis, amorphous silicon carbide thin films for solar cells application have been deposited by means of the electron-beam physical vapour deposition (e-beam PVD) technique and have been isochronally annealed at varying temperatures. The structural and optical properties of the films have been investigated by Fourier transform Infrared and Raman spectroscopies, X-ray diffraction, Scanning Electron Microscopy, Energy Dispersive X-ray Spectroscopy and UV-VIS-NIR spectroscopy. The effect of annealing is a gradual crystallization of the amorphous network of as-deposited silicon carbide films and consequently the microstructural and optical properties are altered. We showed that the microstructural changes of the as-deposited films depend on the annealing temperature. High temperature enhances the growth of Si and SiC nanocrystals in amorphous SiC matrix. Improved stoichiometry of SiC comes with high band gap of the material up to 2.53 eV which makes the films transparent to the visible radiation and thus they can be applied as window layer in solar cells.

The optical properties of metal nanoparticles have been investigated by simulation and experimental techniques. The aim of this investigation was to identify how to use metal nanoparticles to improve light-trapping in silicon solar cells. To do this we require nanoparticles that exhibit a high scattering efficiency and low absorption (i.e. high radiative efficiency) at near-infrared wavelengths. The simulation results identified Ag, Au, Cu and Al as potential candidates for use with silicon solar cells. The optical properties of Ag, Au and Cu nanoparticles are very similar above 700 nm. Below this wavelength Ag was found to be the preferred choice due to a decreased effect from interband transitions in comparison with Au and Cu. Al nanoparticles were found to exhibit markedly different optical properties to identical noble metal nanoparticles, with broader, weaker resonances that can be excited further into the UV. However, Al nanoparticles were found to exhibit higher absorption than noble metals in the NIR due to a weak interband region centred at around 825 nm. Tuning of the resonance position into the NIR was demonstrated by many methods, and extinction peaks exceeding 1200 nm can be achieved by all of the metals studied. However, it is important that the method used to red-shift the extinction peak does not also decrease the radiative efficiency. Core-shell nanoparticles, triangular nanoparticles and platelet-type nanoparticles were found to be unsuitable for silicon solar cells applications due their low radiative efficiencies. Instead, we propose the use of large (> 150 nm) Ag spheroids with moderate aspect ratios. A maximum radiative efficiency of 0.98 was found for noble metal nanospheres when the diameter exceeded 150 nm. The optical properties of Au and Al nanoparticles fabricated by electron-beam lithography were found to be in good agreement with simulations, provided that the substrate and local dielectric environment were accounted for by inclusion of an effective medium in the model. Cr adhesion layers were found to substantially weaken the extinction peaks of Au nanoparticles, and also result in a strong decrease of radiative efficiency. Adhesion layers were not required for Al nanoparticles. The morphological and optical properties of Ag island films were found to be highly dependent on the layer thickness, deposition speed and anneal temperature. Dense arrays containing average particle sizes ranging from 25 nm to 250 nm were achieved using anneal temperatures lower than 200oC. The largest nanoparticles were found to exhibit high extinction from 400 nm to 800 nm. Depositing Ag nanoparticles onto a-Si:H solar cells was found two have two effects on the spectral response. At short wavelengths the QE was decreased due to absorption by small particles or back-scattering by larger particles. At longer wavelengths large maxima and minima are present in the QE spectra. This latter effect is not due to excitation of surface plasmons, but is instead related to modification of interference effects in the thin-film layer stack.

Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2012.<br>This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.<br>Cataloged from student submitted PDF version of thesis.<br>Includes bibliographical references (p. 77-80).<br>Thin film silicon solar cells, which are commonly made from microcrystalline silicon ([mu]c-Si) or amorphous silicon (a-Si), have been considered inexpensive alternatives to thick polycrystalline silicon (polysilicon) solar cells. However, the low solar efficiency of these thin film cells has become a major problem, which prevents thin film silicon cells from being able to compete with other solar cells in the market. One source of inefficiency is the light reflection off the interface between the thin film cell's top Transparent Conducting Oxide (TCO) and the light absorbing silicon. In this work, we demonstrate the use of nanocone textured ZnO as the anti-reflection surface that mitigates this problem. The tapered structure of the nanocone forms a smooth transition of refractive index on the interface between the TCO (ZnO) and the silicon, effectively acting as a wideband Anti-Reflection coating (AR coating). Finite Difference Time Domain simulation is used to estimate the optimal ZnO nanocone parameter (periodicity and height) to be applied on a single junction microcrystalline silicon ([mu]c-Si) solar cell. Relative improvement over 25% in optical performance is achieved in the simulated structure when compared to state-of-the-art [mu]c-Si cell structure. Cheap and scalable colloidal lithography method is then developed to fabricate ZnO nanocone with the desired geometry. Since the ZnO texturing technique works by depositing ZnO on nanocone-textured glass substrate, the technique is potentially applicable to Transparent Conducting Oxides other than ZnO as well, making it a useful TCO texturing technique for solar cell applications.<br>by Jonathan P. Mailoa.<br>M.Eng.

As the efficiency potential for the industrial P-type Al-BSF silicon solar cell reaches its limit, new solar cell technologies are required to continue the pursuit of higher efficiency solar power at lower cost. It has been demonstrated in literature that among possible alternative solar cell structures, cells featuring a local BSF (LBSF) have demonstrated some of the highest efficiencies seen to date. Implementation of this technology in industry, however, has been limited due to the cost involved in implementing the photolithography procedures required. Recent advances in solar cell doping techniques, however, have identified ion implantation as a possible means of performing the patterned doping required without the need for photolithography. In addition, past studies have examined the potential for building solar cells on N-type silicon substrates, as opposed to P-type. Among other advantages, it is possible to create N-type solar cells which do not suffer from the efficiency degradation under light exposure that boron-doped P-type solar cells are subject to. Industry has not been able to capitalize on this potential for improved solar cell efficiency, in part because the fabrication of an N-type solar cell requires additional masking and doping steps compared to the P-type solar cell process. Again, however, recent advances in ion implantation for solar cells have demonstrated the possibility for bypassing these process limitations, fabricating high efficiency N-type cells without any masking steps. It is clear that there is potential for ion implantation to revolutionize solar cell manufacturing, but it is uncertain what absolute efficiency gains may be achieved by moving to such a process. In addition to development of a solar specific ion implant process, a number of new thermal processes must be developed as well. With so many parameters to optimize, it is highly beneficial to have an advanced simulation model which can describe the ion implant, thermal processes, and cell performance accurately. Toward this goal, the current study develops a process and device simulation model in the Sentaurus TCAD framework, and calibrates this model to experimentally measured cells. The study focuses on three main tasks in this regard: Task I - Implant and Anneal Model Development and Validation This study examines the literature in solar and microelectronics research to identify features of ion implant and anneal processes which are pertinent to solar cell processing. It is found that the Monte Carlo ion implant models used in IC fabrication optimization are applicable to solar cell manufacture, with adjustments made to accommodate for the fact that solar cell wafers are often pyramidally textured instead of polished. For modeling the thermal anneal processes required after ion implant, it is found that the boron and phosphorus cases need to be treated separately, with their own diffusion models. In particular, boron anneal simulation requires accurate treatment of boron-interstitial clusters (BICs), transient enhanced diffusion, and dose loss. Phosphorus anneal simulation requires treatment of vacancy and interstitial mediated diffusion, as well as dose loss and segregation. The required models are implemented in the Sentaurus AdvancedModels package, which is used in this study. The simulation is compared to both results presented in literature and physical measurements obtained on wafers implanted at the UCEP. It is found that good experimental agreement may be obtained for sheet resistance simulations of implanted wafers, as well as simulations of boron doping profile shape. The doping profiles of phosphorus as measured by the ECV method, however, contain inconsistencies with measured sheet resistance values which are not explained by the model. Task II - Device Simulation Development and Calibration This study also develops a 3D model for simulation of an N-type LBSF solar cell structure. The 3D structure is parametrized in terms of LBSF dot width and pitch, and an algorithm is used to generate an LBSF structure mesh with this parametrization. Doping profiles generated by simulations in Task I are integrated into the solar cell structure. Boundary conditions and free electrical parameters are calibrated using data from similar solar cells fabricated at the UCEP, as well as data from lifetime test wafers. This simulation uses electrical models recommended in literature for solar cell simulation. It is demonstrated that the 3D solar cell model developed for this study accurately reproduces the performance of an implanted N-type full BSF solar cell, and all parameters fall within ranges expected from theoretical calculations. The model is then used to explore the parameter space for implanted N-type local BSF solar cells, and to determine conditions for optimal solar cell performance. It is found that adding an LBSF to the otherwise unchanged baseline N-type cell structure can produce almost 1% absolute efficiency gain. An optimum LBSF dot pitch of 450um at a dot size of 100um was identified through simulation. The model also reveals that an LBSF structure can reduce the fill factor of the solar cell, but this effect can be offset by a gain in Voc. Further efficiency improvements may be realized by implementing a doping-dependent SRV model and by optimizing the implant dose and thermal anneal. Task III - Development of a Procedure for Ion Implanted N-type LBSF Cell Fabrication Finally, this study explores a method for fabrication of ion-implanted N-type LBSF solar cells which makes use of photolithographically defined nitride masks to perform local phosphorus implantation. The process utilizes implant, anneal, and metallization steps previously developed at the UCEP, as well as new implant masking steps developed in the course of this study. Although an LBSF solar cell has not been completely fabricated, the remaining steps of the process are successfully tested on implanted N-type full BSF solar cells, with efficiencies reaching 20.0%.

Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2016.<br>This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.<br>Cataloged from student-submitted PDF version of thesis. Page 156 blank.<br>Includes bibliographical references (pages 141-153).<br>The efficiencies of single-junction solar cells have been rapidly increasing and approaching their fundamental Shockley-Queisser efficiency limits. This is true for mature commercial technologies such as silicon and cadmium telluride. In order to enable solar cells with higher efficiency limits, new concepts need to be implemented which overcome the fundamental energy conversion mechanism limitations of single-junction solar cells. For this approach to be successful, it is advantageous to leverage existing manufacturing facilities and integrate these new solar cell architectures into commercially successful solar cell technologies such as silicon and cadmium telluride. In this thesis, two novel solar cell concepts are explored, categorized into three contributions. First, the application of intermediate band concept on silicon solar cells is explored by hyperdoping silicon, demonstrating room-temperature sub-band gap optoelectronic response from the material, and evaluating the feasibility of the intermediate band approach for improving silicon solar cell efficiency. Second, perovskite solar cells are integrated onto silicon solar cells to demonstrate mechanically-stacked perovskite/silicon tandem solar cell using low-cost silicon cell and monolithic perovskite/silicon tandem solar cell enabled by a silicon tunnel junction. Third, an analytic model is built to rapidly investigate the energy yield of different tandem solar cell architectures. When applied to cadmium telluride-based tandem solar cells, this model will help thin-film companies like First Solar narrow down the scope of future research and development programs on tandem solar cells.<br>by Jonathan P. Mailoa.<br>Ph. D.

Thin film silicon on low temperature glass substrates is currently seen as the best path toreduce the $/W cost of photovoltaic (PV) modules. However, producing thin film polysilicon, on glass, is an ongoing research challenge. Laser crystallisation of a-Si is one of the possible methods. Typically excimer (XMR) lasers are used for laser crystallisation. This thesis introduces the copper vapour laser (CVL) as a viable alternative for thin film photovoltaic applications. The CVL, like the XMR, is a high powered, pulsed laser. However, the CVL has higher pulse rates (4-20kHz), better beam quality and a visible wavelength output (578 & 511nm). Preliminary experiments, using 600K-heated silicon-on-quartz samples, confirmed that CVL crystallisation can produce area weighted average grain size of 0.1-0.15??m, which is comparable to results reported for XMR??? s. Importantly, the CVL results used thicker films (1??m), which is more applicable to thin photovoltaic devices that need 1-10??m of silicon to be viable. The CVL??? s longer wavelength and therefore longer penetration depth (1/alpha) are proffered as the main reason for this result. Extensive laser-thermal modelling highlighted further opportunities specific to CVL crystallisation. Through-the-glass doublesided irradiation was shown in simulations to reduce thermal gradients, which would enhance crystal growth. The simulations also produced deeper melts at lower surface temperatures, reducing the thermal stress on the sample. Subsequent experiments, using silicon-on-glass, confirmed the benefit of through-the-glass doublesided irradiation by maintaining grain sizes without the usual need for substrate heating. Furthermore, Raman analysis showed that doublesided crystallisation achieved full depth crystallisation, unlike single side irradiation which produced partial crystallisation. A new mode of crystallisation, stepwise crystallisation, was also postulated whereby a series of CVL pulses could be used to incrementally increase the crystallisation depth into the silicon. Simulations confirmed the theoretical basis of the concept, with HeNe Raman spectroscopy and analysis of surface grain sizes providing indirect experimental support. The CVL??? s ability to crystallise thicker films more directly applicable to photovoltaic devices secures its viability as an alternative laser for photovoltaic applications. The through-the-glass doublesided irradiation and the stepwise crystallisation provide additional potential for increased process flexibility over XMR???s.

Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2014.<br>This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.<br>Cataloged from student-submitted PDF version of thesis.<br>Includes bibliographical references (pages 124-129).<br>For the class of nondispersive, nonabsorbing, multilayer thin-film optical systems, this thesis work develops a parallel branch-and-bound computational system on Amazon's EC2 platform, using the Taylor model mathematical/computational system due to Berz and Makino to construct tight rigorous bounds on the merit function on subsets of the search space (as required by a branch-and-bound algorithm). This represents the first, to the best of our knowledge, deterministic global optimization algorithm for this important class of problems, i.e., the first algorithm that can guarantee that a global solution to an optimization problem in this class has been found. For the particular problem of reducing reflection using multilayer systems, it is shown that a gradient index constraint on the solution can be exploited to significantly reduce the search space and thereby make the algorithm more practical. This optimization system is then used to design a broadband omnidirectional antireflection coating for silicon solar energy. The design is experimentally validated using RF sputtering, and shows performance that is competitive with existing solutions based on impractical sophisticated nano-deposition techniques, as well as the more practical but also more narrowly applicable solutions based on texturing. This makes it arguably the best practical solution to this important problem to date. In addition, this thesis develops a mathematical theory for cheaply (in the computational sense) and tightly bounding solutions to parametric weakly-coupled semilinear parabolic (reaction-diffusion) partial differential equation systems, as motivated by the design of tandem organic solar cell structures (which are governed by the drift-diffusion-Poisson system of equations). This represents the first theoretical foundation, to the best of our knowledge, to enable guaranteed global optimization of this important class of problems, which includes, but is broader, than many semiconductor design problems. A serial branch-and-bound algorithm implementation illustrates the applicability of the bounds on a pair of simple examples.<br>by Paul Azunre.<br>Ph. D.

Standard crystalline silicon photovoltaic (PV) modules are designed to continuously convert solar energy into electricity for 25 years. However, the continual generation of electricity by the PV modules throughout their designed service life has been a concern. The key challenge has been the untimely fatigue failure of solder interconnections of solar cells in the modules due to accelerated thermo-mechanical degradation. The goal of this research is to provide adequate information for proper design of solar cell solder joint against fatigue failure through the study of cyclic thermo-mechanical stresses and strains in the joint. This is carried-out through finite element analysis (FEA) using ANSYS software to develop the solar cell assembly geometric models followed by simulations. Appropriate material constitutive model for solder alloy is employed to predict number of cycles to failure of solder joint, hence predicting its fatigue life. The results obtained from this study indicate that intermetallic compound thickness (TIMC); solder joint thickness (TSJ) and width (WSJ) have significant impacts on fatigue life of solder joint. The impacts of TIMC and TSJ are such that as the thicknesses increases solder joint fatigue life decreases. Conversely, as solder joint width (WSJ) increases, fatigue life increases. Furthermore, optimization of the joint is carried-out towards thermo-mechanical reliability improvement. Analysis of results shows the design with optimal parameter setting to be: TIMC -2.5μm, TSJ -20μm and WSJ -1000μm. In addition, the optimized model has 16,264 cycles to failure which is 18.82% more than the expected 13,688 cycles to failure of a PV module designed to last for 25 years.

Since the first commercial silicon carbide (SiC) transistor was released, the interest in SiC has grown exponentially [1]. The wide energy band gap, high critical electric field and thermal conductivity of silicon carbide allow it to withstand higher voltage/current gains than conventional semiconductor materials [2]. The electrical properties of SiC enable integrated devices and circuits to operate at higher voltages and temperatures. One of the most attractive applications for SiC is in inverters for photovoltaic systems, where switching time is of great importance. This thesis presents the study of two bipolar junction transistors (BJT), FSICBH15A120 of SiC and BUV48A of conventional silicon (Si). The transistors were simulated and validated experimentally, then tested in a DC/AC pv inverter with a polycrystalline solar module of 36 solar cells as power source. The simulation results showed high efficiency and low power losses.<br>Sedan den första kommersiella transistorn av kiselkarbid (SiC) släpptes har intresset för SiC ökat exponentiellt [1]. Det breda energibandgapet, höga kritisk elektriska fältstyrkan och termiska ledningsförmågan i SiC gör att den klarar en högre kombination av spänning/strömförstärkning än konventionella halvledarmaterial [2]. De elektriska egenskaperna av SiC gör det möjligt för integrerade komponenter och kretsar att arbeta i högre spänningar och temperaturer. Ett av de största användningsområdena för SiC är i växelriktare för solceller, där switch-tid har stor betydelse. I detta examensarbete presenteras studien av två bipolära transistorer (BJT), FSICBH15A120 av SiC och BUV48A av konventionellt kisel (Si). Transistorerna simulerades och valideras experimentellt, och slutligen jämfördes med varandra i en DC/AC-omvandlare med en polykristallin solpanel av 36 solceller som strömkälla. Hög verkningsgrad och låga energiförluster påvisades.

Les cellules à hétérojonctions de silicium fabriquées par croissance de couches minces de silicium amorphe hydrogéné (a-Si :H) à basse température sur des substrats de silicium cristallin (c-Si) peuvent atteindre des rendements de conversion photovoltaïque élevés (η=23 % démontré). Les efforts de recherche ayant principalement été orientés vers le cristallin de type p jusqu'à présent en France, ce travail s'attache à l'étude du type n pour d'une part déterminer les performances auxquelles s'attendre avec cette nouvelle filière et d'autre part les améliorer. Pour cela, nous avons mis en œuvre des techniques de caractérisation des matériaux composant la structure et de l'interface (a-Si :H/c-Si) couplées à des outils de simulations numériques afin mieux comprendre les phénomènes de transport électronique. Nous nous sommes également intéressés aux cellules à hétérojonctions avec substrats de silicium multicristallin de type n, le silicium multicristallin étant le matériau le plus répandu actuellement dans la fabrication des cellules photovoltaïques.

This thesis is an expansive and in-depth discourse on the textured front surface of silicon solar cells. Systematic and comprehensive analyses of both optical and recombination behaviours are undertaken to arrive at a thorough understanding of the impacts of surface texture. These analyses provide the basis for the development of several novel methods for the precise simulation of photovoltaic devices and modules. A rigorous approach to the optics of surface texture, incorporating polarisation effects, is shown to advance the accuracy of standard reflectance-absorptance-transmittance analyses. Using this approach, assessment of any texture morphology is possible; of particular utility are applications to isotexture and random upright pyramids, as well as extensions to non-ideal morphologies typical on practical devices. The methodology proposed is computationally inexpensive, as it decouples geometric ray tracing from the Fresnel equations, and is hence well suited to routine application. Ray tracing is applied to determine a one-dimensional profile of photogeneration with respect to the distance to an isotextured front surface. An analytical approximation to this profile is developed. The approximation is suitable for routine analysis of multicrystalline devices, and facilitates the simulation of short circuit current in typical wafered silicon solar cells with less than 3.5% error. By comparison with ray traced photogeneration profiles beneath pyramidal texture, an established approximation is validated; application of this widely-used approximation results in the prediction of short circuit current in typical devices to within 6% accuracy. In further exploration of optical behaviour, measurements of the angular distribution of reflection from textured surfaces are shown to provide critical new information for accurate modelling of photovoltaic modules. An example application demonstrates that, in the case that cells are encapsulated, current generation beneath isotexture approaches 99% of that calculated beneath random pyramids. This implies that cast-mono silicon cells should be isotextured, rather than pyramidally textured, when they possess less than 85% monocrystalline surface area. The paucity of experiments dedicated to the recombination mechanisms at textured surfaces is recognised in this work and is rectified by a thorough study. This is particularly pertinent given that the current trend towards cells featuring lighter front diffusions elevates the relative importance of front surface recombination. Compared to a planar surface, it is shown that isotexture incurs little or no recombination penalty. At pyramidal texture, however, increased surface area drives increased recombination according to conventional understanding. It is demonstrated that an additional increase due to the orientation of texture facets occurs when an Si-SiO2 interface is present. Further, results of this study repudiate the common conjecture that vertices and edges necessarily induce supplementary recombination when passivated with common dielectrics; an experimental methodology developed in this thesis is applied to show that any increase in recombination can be avoided by judicious choice of passivation. Finally, it is shown that recombination is commonly greater at a regular array of inverted pyramids than at an equivalently prepared random array of upright pyramids. -- provided by Candidate.

A model capable of describing the optoelectronic response of tandem photovoltaic cells is introduced, employing commercial software provided by Lumerical Solutions Inc. Specifically, a four-terminal thin perovskite/silicon architecture is studied, with special focus on the optical properties of the interlayer, and also on the ITO contact problematic – tackled by an alternative design, where all but one transparent contact are comprised of state-of-the-art transparent metallic structured grids. Furthermore, a look into how light-trapping formalisms are essential to the suc-cess of this architecture is taken. Thus, this research aims to demonstrate the means to overcome one of the main constraints in tandem cells performance, the transparent oxide’s parasitic absorption characteristics. Addi-tionally, the possibility of highly efficient, thin and flexible, solar cells is explored, being con-cluded that these can be achieved with the referred architecture after careful optimization of the design parameters. The developed optoelectronic model can predict the response of heterojunc-tion solar cells, and also of modelling perovskite solar cells – aspects which are not commonly reported in recent literature. The parasitic absorption is reduced by 30% when replacing two ITO contacts by the novel metallic grid alternatives. Simultaneously, on a hypothetical light-management scenario where 10x optical path length in the bottom layer is implemented, up to 27% efficiency is achievable by the tandem device. The attained results can be used as a guideline for forthcoming architecture improvements showing promise for the future of thin and flexible photovoltaic applications.

Solar photovoltaic has become one of the potential solutions for current energy needs and for combating greenhouse gas emissions. The photovoltaics (PV) industry is booming, with a yearly growth rate well in excess of 30% over the last decade. This explosive growth has been driven by market development programs to accelerate the deployment of sustainable energy options and rapidly increasing fossil fuel prices. Currently, the PV market is based on silicon wafer solar cells (thick cells of around 150–300 μm made of crystalline silicon). This technology, classified as the first-generation of photovoltaic cells. The second generation of photovoltaic materials is based on the introduction of thin film layers of semiconductor materials. Unfortunately, the conversion efficiency of the current PV systems is low despite the lower manufacturing costs. Nevertheless, to achieve highly efficient silicon solar cell devices, the development of new high quality materials in terms of structure and electrical properties is a must to overcome the issues related to amorphous silicon (a -Si:H) degradation. Meanwhile, to remain competitive with the conventional energy sources, cost must be taken into consideration. Moreover, novel approaches combined with conventional mature silicon solar cell technology can boost the conventional efficiency and break its maximum limits. In our approach, we set to achieve efficient, stable and affordable silicon solar cell devices by focusing on the development of a new device made of epitaxial films. This new device is developed using new epitaxial growth phosphorous and/or boron doped layers at low processing temperature using plasma enhanced chemical vapor deposition (PECVD). The junction between the phosphorous or boron-doped epitaxial film of the device is formed between the film and the p or n-type crystalline silicon (c-Si) substrate, giving rise to (n epi-Si/p c-Si device or p epi-Si/n c-Si device), respectively. Different processing conditions have been fully characterized and deployed for the fabrication of different silicon solar cells architectures. The high quality epitaxial film (up to 400 nm) was used as an emitter for an efficient stable homojunction solar cell. Extensive analysis of the developed fine structure material, using high resolution transmission electron microscope (HRTEM), showed that hydrogen played a crucial role in the epitaxial growth of highly phosphorous doped silicon films. The main processing parameters that influenced the quality of the structure were; radio frequency (RF) power density, the processing chamber pressure, the substrate temperature, the gas flow rate used for deposition of silicon films, and hydrogen dilution. The best result, in terms of structure and electrical properties, was achieved at intermediate hydrogen dilution (HD) regime between 91 and 92% under optimized deposition conditions of the rest of the processing parameters. The conductivity and the carrier mobility values are good indicators of the electrical quality of the silicon (Si) film and can be used to investigate the structural quality indirectly. The electrical conductivity analyses using spreading resistance profile (SRP), through the detection of active carriers inside the developed films, are presented in details for the developed epitaxial film under the optimized processing conditions. Measurements of the active phosphorous dopant revealed that, the film has a very high active carrier concentration of an average of 5.0 x1019 cm-3 with a maximum value of 6.9 x 1019 cm-3 at the interface between substrate and the epitaxial film. The observed higher concentration of electrically active P atoms compared to the total phosphorus concentration indicates that more than half of dopants become incorporated into substitutional positions. Highly doping efficiency ηd of more than 50 % was calculated from both secondary ion mass spectroscopy (SIMS) and SRP analysis. A variety of proposed structures were fabricated and characterized on planar, textured, and under different deposition temperatures. Detailed studies of the photovoltaic properties of the fabricated devices were carried out using epitaxial silicon films. The results of these studies confirmed that the measured open circuit voltage (Voc) of the device ranged between 575 and 580 mV with good fill factor (FF) values in the range of 74-76 %. We applied the rapid thermal process (RTP) for a very short time (60 s) at moderate temperature of 750oC to enhance the photovoltaic properties of the fabricated device. The following results were achieved, the values of Voc, and the short circuit current (Isc) were 598 mV and 27.5 mA respectively, with a fill factor value of up to 76 % leading to an efficiency of 12.5 %. Efficiency enhancement by 13.06 % was achieved over the reference cell which was prepared without using RTP. Another way to increase the efficiency of the fabricated device is to reduce the reflections from its polished substrate. This was achieved by utilizing the light trapping technique that transforms the reflective polished surface into a pyramidical texturing using alkaline solutions. Further enhancements of both Voc and Isc were achieved with values of 612 mV and 31mA respectively, and a fill factor of 76 % leading to an increase in the efficiency by up to 13.8 %. A noticeable efficiency enhancement by ~20 % over the reference cell is reported for the developed devices on the textured surfaces. Moreover, the efficiency of the fabricated epitaxial silicon solar cells can be boosted by the deployment of silicon nanocrystals (Si NCs) on the top surface of the fabricated devices. In the course of this PhD research we found a way to achieve this by depositing a thin layer of Si NCs, embedded in amorphous silicon matrix, on top of the epitaxial film. Structural analysis of the deposited Si NCs was performed. It is shown from the HRTEM analysis that the developed Si NCs, are randomly distributed, have a spherical shape with a radius of approximately 2.5 nm, and are 10-20 nm apart in the amorphous silicon matrix. Based on the size of the developed Si NCs, the optical band gap was found to be in the region of 1.8-2.2 eV. Due to the incorporation of Si NCs layer a noticeable enhancement in the Isc was reported.

The focus of this thesis is on the optimization and fabrication of p-i-n amorphous silicon (a-Si:H) solar cells both on glass and transparent plastic substrates. These solar cells are specifically fabricated on transparent substrates to facilitate the integration of thin film batteries with these solar cells. To comply with plastic substrates, different silicon layers are optimized at the low processing temperature of 135 C. In the first part of the optimization process, the structural, electronic, and optical properties of boron- and phosphorous-doped, hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) at the substrate temperature of 135 C are elaborated. Additionally, in this part, the deposition of protocrystalline silicon (pc-Si) films on glass substrates are investigated. In the device integration and fabrication part of this thesis, the optimization process is continued by fabricating single junction devices with different hydrogen dilution ratios for the cell absorber layer. The optimum device performance is achieved with an absorber layer right at the transition from amorphous to microcrystalline silicon. To further improve the performance of the fabricated solar cells, amorphous silicon carbide buffer layers are introduced between the nc-Si p-layer and the undoped pc-Si absorber layer. Single junction p-p'-i-n solar cells are fabricated and characterized both on glass and plastic substrates. Our measurements show conversion efficiencies of 7.0% and 6.07% for the cells fabricated on glass and plastic substrates, respectively. In the last part of this research, the light trapping enhancement in amorphous silicon solar cells using Distributed Bragg Reflectors (DBRs) are experimentally demonstrated. Reflectance characteristics of DBR test structures, consisting of amorphous silicon (a-Si) / amorphous silicon nitride (SiN) film stacks are analysed and compared with those of conventional ZnO/Al back reflectors. DBR optical measurements show that the average total reflectance over the wavelength region of 600-800 nm is improved by 28% for DBR back structures. Accordingly, single junction amorphous silicon solar cells with DBR and Al back reflectors are fabricated both on glass and plastic substrates. Our results show that the short-circuit current density and consequently the conversion efficiency is enhanced by 10% for the cells fabricated on textured transparent conductive oxide substrates. In addition, these DBR back structures are designed and employed to improve the efficiency of semi-transparent solar cells. In this application, the optimized DBR structures are designed to be optically transparent for the part of the visible range and highly reflective for the red and infra-red part of the spectrum. Using these DBR structures, the efficiency of the optimum semi-transparent solar cell is enhanced by 5%.

A series of experiments was carried out to compare the structural and electronic properties of intrinsic nanocrystalline silicon (nc-Si:H) thin films deposited via continuous wave (cw) and pulsed (p)-PECVD at 150°C substrate temperature. Working at this temperature allows for the easy transfer of film recipes from glass to plastic substrates in the future. During the p-PECVD process the pulsing frequency was varied from 0.2 to 50 kHz at 50% duty cycle. Approximately 15% drop in the deposition rate was observed for the samples fabricated in p-PECVD compared to cw-PECVD. The optimum crystallinity and photo (σph) and dark conductivity (σD) were observed at 5 kHz pulsing frequency, with ~10% rise in crystallinity and about twofold rise in the σph and σD compared to cw-PECVD. However, for both the cw and p-PECVD nc-Si:H films, the observed σph and σD were one to two orders and three orders of magnitude higher respectively than those reported in literature. The average activation energy (EA) of 0.16 ∓ 0.01 eV for nc-Si:H films deposited using p-PECVD confirmed the presence of impurities, which led to the observation of the unusually high conductivity values. It was considered that the films were contaminated by the impurity atoms after they were exposed to air. Following the thin film characterization procedure, the optimized nc-Si:H film recipes, from cw and p-PECVD, were used to fabricate the absorber layer of thin film solar cells. The cells were then characterized for J-V and External Quantum Efficiency (EQE) parameters. The cell active layer fabricated from p-PECVD demonstrated higher power conversion efficiency (η) and a maximum EQE of 1.7 ∓ 0.06 % and 54.3% respectively, compared to 1.00 ∓ 0.04 % and 48.6% respectively for cw-PECVD. However, the observed η and EQE of both the cells were lower than a reported nc-Si:H cell fabricated via p-PECVD with similar absorber layer thickness. This was due to the poor Short-circuit Current Density (Jsc), Open-circuit Voltage (Voc), and Fill Factor (FF) of the cw and p-PECVD cells respectively, compared to the reported cell. The low Jsc resulted from the poor photocarrier collection at longer and shorter wavelengths and high series resistance (Rseries). On the other hand, the low Voc stemmed from the low shunt resistance (Rsh). It was inferred that the decrease in the Rsh occurred due to the inadequate electrical isolation of the individual cells and the contact between the n – layer and the front TCO contact at the edge of the p-i-n deposition area. Additionally, the net effect of the high Rseries and the low Rsh led to a decrease in the FF of the cells.

Compared to wafer based solar cells, thin film solar cells greatly reduce material cost and thermal budget due to low temperature process. Monolithically manufacturing allows large area fabrication and continuous processing. In this work, several photovoltaic thin films have been developed by rf-PECVD including a-Si:H and μc-Si, both intrinsic and doped on Corning 4 inch glass substrate at low temperature. The conductivity of n type and p type μc-Si at 180ºC was 17S/cm and 7.1E-2S/cm, respectively. B dopants either in a-Si:H or μc-Si films require higher plasma power to get active doping. The B2H6-to-SiH4 flow ratio for p type μc-Si lies from 0.01 to 0.025. Chamber conditions have critical effect on film quality. Repeatable and superior results require a well-established cleaning passivation procedure. Moreover, μc-Si films have been deposited from pure silane on glass substrate by modified rf-ICP-CVD. The deposition rate has been dramatically increased to 5Å/s due to little H2 dilution with crystalline fraction was around 69%, and 6.2Å/s with crystalline fraction 45%. Microstructure started to form at 150ºC with a thin incubation layer on the glass substrate, and became fully dense conical conglomerates around 300nm where conductivity and crystallinity saturated. Additionally, a-SiGe:H films have been developed by modified rf-ICP-CVD. The optical band gaps have been varied from 1.25 to 1.63eV by changing SiH4-to-GeH4 ratio. Also high temperature resulted in low bandgap. Cross-section TEM showed some microcrystllites appeared near interface region. Heterojunction solar cells on p type c-Si wafer have been fabricated using films developed in this thesis. Interference fringes in EQE disappeared on either textured substrate or cells with lift-off contacts. Maximum EQE was 87% around 700nm. I-V curves have also been studied where the interesting kink suggests a counter-diode has formed between emitter region and contacts.