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Gotowe bibliografie tematyczne / Chalcopyrite compounds

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Gotowa bibliografia na temat „Chalcopyrite compounds”

Autor: Grafiati

Data publikacji: 6 września 2023

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Artykuły w czasopismach na temat "Chalcopyrite compounds"

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Kumari, Jyoti, Shalini Tomar, Sukhendra Sukhendra, Banwari Lal Choudharya, Upasana Rani i Ajay Singh Verma. "Fundamental Physical Properties of LiInS2 and LiInSe2 Chalcopyrite Structured Solids". 3, nr 3 (28.09.2021): 62–69. http://dx.doi.org/10.26565/2312-4334-2021-3-09.

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For the couple of chalcopyrite compounds, we have theoretically studied the various properties for example structural, electronic optical and mechanical properties. The band structure curve, the density of states as well as the total energy have been investigated with the help of ATK-DFT by using the pseudo-potential plane wave method. For the LiInS2 and LiInSe2 chalcopyrites, we have found that these compounds possess direct band gap; which is 3.85 eV and 2.61 eV for LiInS2 and LiInSe2 respectively. It shows that the band gap is decreasing from ‘S’ to ‘Se’ as well as the B/G ratio called Pugh’s ratio is 2.10 for LiInS2 and 2.61 for LiInSe2 so these compounds are ductile in nature also these compounds are found to be mechanically stable. The study of this work display that the couple of these chalcopyrite compounds can be the promising candidate for the substitution of absorbing layer in the photovoltaic devices.

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Khan, Karina, Kamal N. Sharma, Amit Soni i Jagrati Sahariya. "First principle study of optical and electronic response of Ca-based novel chalcopyrite compounds". Physica Scripta 98, nr 3 (15.02.2023): 035821. http://dx.doi.org/10.1088/1402-4896/acb8ee.

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Abstract A series of Ca-based novel chalcopyrite compounds have been studied by means of the full-potential linearized augmented plane wave method. In this work, we have used one of the utmost precise exchange and correlation functional of Tran-Blaha modified Becke Johnson (TB-mBJ) for the investigation of electronic as well as optical properties of Ca based chalcopyrite compounds namely, CaXY2 (X = Ge, Sn; Y = N, P, As). The computed energy bands and density of states reveals the semiconducting nature of all these studied compounds. The bandgap of CaXY2 (X = Ge, Sn; Y = N, P, As) compounds are found within the energy range 1.60–3.74 eV. The frequency dependent optical properties are investigated here, to understand the probable usage of these Ca-based chalcopyrite’s in optoelectronic applications. The imaginary dielectric tensors are presented and explained in terms of inter-band transitions. The integrated absorption coefficients are calculated to interpret the absorption spectra of all studied compounds.

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Dietrich, M., A. Burchard, D. Degering, M. Deicher, J. Kortus, R. Magerle, A. Möller, V. Samokhvalov, S. Unterricker i R. Vianden. "Quadrupole Interaction in Ternary Chalcopyrite Semiconductors: Experiments and Theory". Zeitschrift für Naturforschung A 55, nr 1-2 (1.02.2000): 256–60. http://dx.doi.org/10.1515/zna-2000-1-245.

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Electric field gradients have been measured at substitutional lattice sites in ternary semiconductors using Perturbed γ -γ Angular Correlation spectroscopy (PAC). The experimental results for AIBIIIC2 chalcopyrite structure compounds and • AIIB2IIIC4IV defect chalcopyrites are compared with ab nitio calculations. The latter were carried out with the WIEN code that uses the Full Potential Linearized Augmented Plane Wave method within a density functional theory. The agreement between experiment and theory is in most cases very good. Furthermore, the anion displacements in AgGaX2 -compounds (X: S, Se, Te) have been determined theoretically by determining the minimum of the total energy of the electrons in an elementary cell.

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Yalikun, Alimujiang, Ming-Hsien Lee i Mamatrishat Mamat. "Theoretical investigation on the promotion of second harmonic generation from chalcopyrite family AIGaS2 to AIIGa2S4". RSC Advances 9, nr 71 (2019): 41861–67. http://dx.doi.org/10.1039/c9ra09109b.

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Bairamov, B. H., V. Yu Rud' i Yu V. Rud'. "Properties of Dopants in ZnGeP2, CdGeAs2, AgGaS2 and AgGaSe2". MRS Bulletin 23, nr 7 (lipiec 1998): 41–44. http://dx.doi.org/10.1557/s0883769400029080.

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Ternary-chalcopyrite structure ZnGeP2, CdGeAs2 (II-IV-V2) and AgGaS2, AgGaSe2 (I-III-VI2) compounds are currently of technological interest. They show the most promise for practical nonlinear optical applications in the areas of high-efficiency optical parametric oscillators and frequency up-converters for the infrared (ir) range as well as for widespectral-range optoelectronic devices. (See also the article by Schunemann, Schepler, and Budni in this issue.) However extensive realization of their potential has still not been achieved. One of the principal difficulties in the way to obtaining high-device-quality ZnGeP2, CdGeAs2, AgGaS2, and AgGaSe2 single crystals is undesired optical absorption in their transparency range near the fundamental band edge induced by lattice-related defects. This article summarizes selected aspects of dopant-incorporation techniques of these crystals including dopant choice of dopant material and monitoring of dopant incorporation as done in our laboratory.In general for the ternary chalcopyrite compounds, doping-incorporation processes are more complicated in comparison to those of binary zinc-blende III-V compounds. The most common sources of dominant incorporation of acceptors and donors in as-grown chalcopyrites are believed to appear from (1) nonstoichiometric melts as well as by doping with different elements during the growth process and (2) incomplete removal of disorder on the cation sublattice during subsequent cooling. Furthermore the chalcopyrite structure II-IV-V2 undergoes a disorder-order phase transition upon cooling through approximately 1220 K for ZnGeP2 and 900 K for CdGeAs2. At these transition temperatures, solidification can be complicated also by supercooling phenomena, and the crystals transform from the cubic zinc-blende structure (where Zn atoms randomly fill cation sites) to the ordered chalcopyrite structure (e.g., when Zn and Ge occupy alternating cation sites in ZnGeP2).

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Vijayalakshmi, D., i G. Kalpana. "First principle calculations on structural, electronic, and magnetic properties of CdMAs2 (M = Sc, Ti, V) chalcopyrites". Canadian Journal of Physics 95, nr 11 (listopad 2017): 1031–36. http://dx.doi.org/10.1139/cjp-2016-0364.

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Structural, electronic, and magnetic properties of ternary CdMAs2 (M = Sc, Ti, and V) compounds in the chalcopyrite structure have been studied using full-potential linearized augmented plane wave method based on density functional theory. We present a detailed study of electronic band structure, density of states, and magnetic moment of all three compounds within local spin density approximation and generalized gradient approximation. CdMAs2 compounds are derived from chalcopyrite structured CdGeAs2 with the substitution of transition metal (TM) atoms at Ge site. Negative values of formation energy signify that these materials are stable in chalcopyrite structure. Spin-polarized calculations show that the substitution of TM atoms at the group IV site influences the appearance of ferromagnetic state (FM) in CdScAs2 and CdVAs2 compounds. FM in CdScAs2 and CdVAs2 compounds is mainly due to the strong spin polarization of 3d states of M cations and 4p states of As anion. CdVAs2 also exhibits half metallic ferromagnetism with an integer magnetic moment of 1.00μB per formula unit. However, there is no effective spin-polarization of energy states at the Fermi level in CdTiAs2 compound and shows a non-magnetic behaviour.

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Chandra, S., Anita Sinha i V. Kumar. "Electronic and elastic properties of AIIB2IIIC4VI defect-chalcopyrite semiconductors". International Journal of Modern Physics B 33, nr 28 (10.11.2019): 1950340. http://dx.doi.org/10.1142/s0217979219503405.

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The electronic and elastic properties of [Formula: see text] defect-chalcopyrite semiconductors have been studied using first-principle density functional theory (DFT) calculations. The lattice constants, energy band gap, elastic stiffness constants, bulk modulus, shear modulus, shear anisotropy factor, Young’s modulus, Debye temperature, Poisson’s ratio and B/G ratio have been computed. The values of elastic constants of 14 defect-chalcopyrites and Debye temperature for 18 compounds have been reported for the first time. The obtained results are in reasonable agreement with the experimental values in few cases where experiments are performed and reported values.

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Valeri-Gil, M. L., i C. Rincón. "Thermal conductivity of ternary chalcopyrite compounds". Materials Letters 17, nr 1-2 (lipiec 1993): 59–62. http://dx.doi.org/10.1016/0167-577x(93)90148-q.

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Grechenkov, Jurij, Aleksejs Gopejenko, Dmitry Bocharov, Inta Isakoviča, Anatoli I. Popov, Mikhail G. Brik i Sergei Piskunov. "Ab Initio Modeling of CuGa1−xInxS2, CuGaS2(1−x)Se2x and Ag1−xCuxGaS2 Chalcopyrite Solid Solutions for Photovoltaic Applications". Energies 16, nr 12 (20.06.2023): 4823. http://dx.doi.org/10.3390/en16124823.

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Chalcopyrites are ternary semiconductor compounds with successful applications in photovoltaics. Certain chalcopyrites are well researched, yet others remain understudied despite showing promise. In this study, we use ab initio methods to study CuGaS2, AgGaS2, and CuGaSe2 chalcopyrites with a focus on their less studied solid solutions. We use density functional theory (DFT) to study the effects that atomic configurations have on the properties of a solid solution and we calculate the optical absorption spectra using a many-body perturbation theory. Our theoretical simulations predict that excess of In and Se in the solid solutions leads to narrowing of the band gap and to the broadening of the absorption spectra. Obtained results show promise for possible photovoltaic applications, as well as developed methodology can be used for further study of other promising chalcopyritic compounds.

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Aikawa, Kosei, Mayumi Ito, Atsuhiro Kusano, Ilhwan Park, Tatsuya Oki, Tatsuru Takahashi, Hisatoshi Furuya i Naoki Hiroyoshi. "Flotation of Seafloor Massive Sulfide Ores: Combination of Surface Cleaning and Deactivation of Lead-Activated Sphalerite to Improve the Separation Efficiency of Chalcopyrite and Sphalerite". Metals 11, nr 2 (2.02.2021): 253. http://dx.doi.org/10.3390/met11020253.

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The purpose of this study is to propose the flotation procedure of seafloor massive sulfide (SMS) ores to separate chalcopyrite and galena as froth and sphalerite, pyrite, and other gangue minerals as tailings, which is currently facing difficulties due to the presence of water-soluble compounds. The obtained SMS ore sample contains CuFeS2, ZnS, FeS2, SiO2, and BaSO4 in addition to PbS and PbSO4 as Pb minerals. Soluble compounds releasing Pb, Zn2+, Pb2+, and Fe2+/3+ are also contained. When anglesite co-exists, lead activation of sphalerite occurred, and thus sphalerite was recovered together with chalcopyrite as froth. To remove soluble compounds (e.g., anglesite) that have detrimental effects on the separation efficiency of chalcopyrite and sphalerite, surface cleaning pretreatment using ethylene diamine tetra acetic acid (EDTA) was applied before flotation. Although most of anglesite were removed and the recovery of chalcopyrite was improved from 19% to 81% at 20 g/t potassium amyl xanthate (KAX) after EDTA washing, the floatability of sphalerite was not suppressed. When zinc sulfate was used as a depressant for sphalerite after EDTA washing, the separation efficiency of chalcopyrite and sphalerite was improved due to deactivation of lead-activated sphalerite by zinc sulfate. The proposed flotation procedure of SMS ores—a combination of surface cleaning with EDTA to remove anglesite and the depression of lead-activated sphalerite by using zinc sulfate—could achieve the highest separation efficiency of chalcopyrite and sphalerite; that is, at 200 g/t KAX, the recoveries of chalcopyrite and sphalerite were 86% and 17%, respectively.

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Rozprawy doktorskie na temat "Chalcopyrite compounds"

1

Yoodee, Kajornyod. "Crystallographic and band structure properties of some I-III-VI2 chalcopyrite compounds and alloys". Thesis, University of Ottawa (Canada), 1985. http://hdl.handle.net/10393/4670.

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Hergert, Frank. "Chemical formation reactions for Cu(In,Ga)Se2 and other chalcopyrite compounds an in-situ x-ray diffraction study and crystallographic models /". [S.l.] : [s.n.], 2007. http://deposit.ddb.de/cgi-bin/dokserv?idn=983606056.

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Stephan, Christiane [Verfasser]. "Structural trends in off stoichiometric chalcopyrite type compound semiconductors / Christiane Stephan". Berlin : Freie Universität Berlin, 2011. http://d-nb.info/1025939549/34.

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Kessler, John. "Etude photoelectrochimique des alliages cuin::(1-x)ga::(x)se::(2) : relation entre les proprietesphotovoltaiques des couches minces de cugase::(2) et leur composition". Paris 7, 1988. http://www.theses.fr/1988PA077189.

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L'etude des echantillons massifs de cuin::(1-x)ga::(x)se::(2) de type p permet de mettre au point la solution electrolytique acide en presence du couple redix v**(2+/3+). Etude des positions energetiques des bandes par mesures capacitives. Etude de la variation de la bande interdite en fonction de x et mesure des longueurs de diffusion par l'evolution du photocourant en fonction du potentiel. Etude des proprietes optiques et electroniques des couches minces cugase::(2) de type p en fonction des ecarts a la stoechiometrie

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5

Tang, Li-Chuan, i 唐立權. "Theoretical and experimental studies of second-order nonlinear optical properties for various polyhedron distortions in ternary halides and some chalcopyrite compounds". Thesis, 2009. http://ndltd.ncl.edu.tw/handle/56630959983291752567.

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博士
國立交通大學
光電工程系所
97
Microstructures, electronic structures, linear- and nonlinear-optical properties of the crystals with two main polyhedron categories are examined in this study by using both the first principles calculation and the experimental methods. The studied crystals include the rhombohedral ternary halides (ABX$_3$ (A=Cs, Rb, B=Ge, X=Cl, Br, I)), the wide-bandgap ternary nitrides($A^{II}B^{IV}N_2$ ($A^{II}=Be, Mg$, $B^{IV}=C, Si, Ge$)), and chalcopyrite AgGaS$_2$, AgGaSe$_2$, and AgGa(S$_x$Se$_{1-x}$)$_2$. \\ First, one of the most important parts, systematic studies based on first-principles calculations of second-order optical susceptibilities as well as the dielectric function for CsGeX$_3$ (X=Cl, Br, and I; CGX) are presented. The relation between structural properties and the optoelectronic responses are examined. The structural factors, $\Delta \alpha$, $d_{Ge}$, $d_X$ are proposed to describe the degree of distortion from an ideal perovskite structure. $\Delta \alpha$ and $d_{Ge}$ increase when the halide anions are changed from Cl to I; while halide anion displacement, $d_X$, decreases. The structural distortion effect on these rhombohedral CGX crystals is analyzed via the first-principles calculations. The dielectric function and the second harmonic generation (SHG) response coefficient also increase with increasing $\Delta \alpha$ and $d_{Ge}$. The direct bandgaps, $E_G$, of CsGeX$_3$ all occur at the $R$-point, $\Delta E_R$. The experimental bandgaps of CGX crystals become smaller, i.e. $E^{CGC}_G$(3.67eV)$>E^{CGB}_G$(2.32eV)$>E^{CGI}_G$(1.53eV), as the $\Delta \alpha$ and $d_{Ge}$ increase, i.e. $d^{CGC}_{Ge}

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Hergert, Frank [Verfasser]. "Chemical formation reactions for Cu(In,Ga)Se2 and other chalcopyrite compounds : an in-situ X-ray diffraction study and crystallographic models / vorgelegt von Frank Hergert". 2007. http://d-nb.info/983606056/34.

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Chen, Shih-Cin, i 陳世欽. "Preparation and Characterization of Chalcopyrite I-III-VI Group Ternary Compound CuGaSe2 and CuInSe2 polycrystalline thin films by printing processes". Thesis, 2013. http://ndltd.ncl.edu.tw/handle/fb5ps5.

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碩士
國立虎尾科技大學
材料科學與綠色能源工程研究所
101
In this experiment, we use non-vacuum process to prepare CuInSe2 and CuGaSe2 these two different materials as the absorber layers for photovoltaic devices. First of all, copper, indium, gallium, and selenium with different ratios were smelted into CuInSe2 and CuGaSe2 ternary alloys. The ink was prepared using ball milling and was printed onto a glass substrate to form a precursor layer by spin coating. Then, the samples were treated with rapid thermal annealing (RTA) process within a furnace, and the obtained film has a structure of chalcopyrite. Energy dispersive spectroscopy (EDS) and (ICP) measurements were used to detect the change of its composition, surface and cross-section morphologies were determined by scanning electron microscopy (SEM) images, the changes of the composition were measured by X-ray diffraction (XRD) spectra, and the band gap variation was obtained by UV-Vis spectra. From the experimental results, the thin film turns into a chalcopyrite structure after annealing, the composition of copper content increases with increasing heat treatment temperature, the half-height width of XRD spectra becomes narrower, and the crystal grains become larger. It is found that CuInSe2 thin film with chalcopyrite structure can be obtained by heating at 600oC, and CuGaSe2 has the best quality with the heat treatment temperature of 650oC. The bandgaps of CuInSe2 and CuGaSe2 after annealing were 1.04 and 1.73 eV, respectively.

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Książki na temat "Chalcopyrite compounds"

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Rössler, U., red. New Data and Updates for several Semiconductors with Chalcopyrite Structure, for several II-VI Compounds and diluted magnetic IV-VI Compounds. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-28531-8.

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Części książek na temat "Chalcopyrite compounds"

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Solis-Marcial, O. J., i G. T. Lapidus. "Leaching of Chalcopyrite Concentrate with Organic Ligand Compounds". W T.T. Chen Honorary Symposium on Hydrometallurgy, Electrometallurgy and Materials Characterization, 605–12. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2012. http://dx.doi.org/10.1002/9781118364833.ch55.

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Kistaiah, P., K. Satyanarayana Murthy i Leela Iyengar. "Correlation Between the Structural Parameters and the Thermal Conductivity of Chalcopyrite-Type Ternary Compounds". W Thermal Conductivity 18, 127–37. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4684-4916-7_14.

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Rössler, U. "AgGaS2: force constants". W New Data and Updates for several Semiconductors with Chalcopyrite Structure, for several II-VI Compounds and diluted magnetic IV-VI Compounds, 1–2. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-28531-8_1.

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Rössler, U. "AgInTe2: force constants". W New Data and Updates for several Semiconductors with Chalcopyrite Structure, for several II-VI Compounds and diluted magnetic IV-VI Compounds, 13. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-28531-8_10.

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Rössler, U. "ZnSe: Debye-Waller factor, temperature factor". W New Data and Updates for several Semiconductors with Chalcopyrite Structure, for several II-VI Compounds and diluted magnetic IV-VI Compounds, 226–27. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-28531-8_100.

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Rössler, U. "ZnSe: phonon dispersion curves, phonon spectra". W New Data and Updates for several Semiconductors with Chalcopyrite Structure, for several II-VI Compounds and diluted magnetic IV-VI Compounds, 228–29. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-28531-8_101.

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Rössler, U. "ZnSe: elastic constants, internal strain parameter". W New Data and Updates for several Semiconductors with Chalcopyrite Structure, for several II-VI Compounds and diluted magnetic IV-VI Compounds, 230–32. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-28531-8_102.

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Rössler, U. "ZnSe: bulk modulus, compressibility". W New Data and Updates for several Semiconductors with Chalcopyrite Structure, for several II-VI Compounds and diluted magnetic IV-VI Compounds, 233–37. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-28531-8_103.

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Rössler, U. "ZnSe: dielectric constant, effective charge". W New Data and Updates for several Semiconductors with Chalcopyrite Structure, for several II-VI Compounds and diluted magnetic IV-VI Compounds, 238–39. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-28531-8_104.

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Rössler, U. "ZnSe: phonon frequencies, Grüneisen parameters, anharmonic frequency shift and width". W New Data and Updates for several Semiconductors with Chalcopyrite Structure, for several II-VI Compounds and diluted magnetic IV-VI Compounds, 240–45. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-28531-8_105.

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Streszczenia konferencji na temat "Chalcopyrite compounds"

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Derollez, P., A. Laamyem, R. Fouret, B. Hennion i J. Gonzalez. "Phonons in chalcopyrite compounds". W Neutrons and numerical methods. AIP, 1999. http://dx.doi.org/10.1063/1.59491.

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Maeda, T., T. Takeichi i T. Wada. "Defect Formation Energies in Chalcopyrite-Type AgInSe2 and the Rerated Chalcopyrite Compounds by First Principles Calculations". W 2006 IEEE 4th World Conference on Photovoltaic Energy Conference. IEEE, 2006. http://dx.doi.org/10.1109/wcpec.2006.279486.

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Zunger, Alex, i Su-Huai Wei. "Electronic structure theory of chalcopyrite alloys, interfaces, and ordered vacancy compounds". W The 13th NREL photovoltaics program review meeting. AIP, 1996. http://dx.doi.org/10.1063/1.49433.

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Wahnon, P., P. Palacios, K. Sanchez, I. Aguilera i J. Conesa. "AB-Initio Modeling of Intermediate Band Materials Based on Metal-Doped Chalcopyrite Compounds". W 2006 IEEE 4th World Conference on Photovoltaic Energy Conference. IEEE, 2006. http://dx.doi.org/10.1109/wcpec.2006.279347.

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Vijayalakshmi, D., i G. Kalpana. "Half-metallic ferromagnetism in chalcopyrite type compounds ZnMX2 (M=Sc, V, Mn, Fe; X = P, As)". W NANOFORUM 2014. AIP Publishing LLC, 2015. http://dx.doi.org/10.1063/1.4918010.

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Singh, Hardev, Mukhtiyar Singh, Manish K. Kashyap, S. K. Tripathi, Keya Dharamvir, Ranjan Kumar i G. S. S. Saini. "Ab-initio Study of Electronic Band Structures of CdBAs[sub 2] (B = Si, Ge and Sn) Chalcopyrite Compounds". W INTERNATIONAL CONFERENCE ON ADVANCES IN CONDENSED AND NANO MATERIALS (ICACNM-2011). AIP, 2011. http://dx.doi.org/10.1063/1.3653663.

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Sydykanov, Muratbek, Yerkin Bektay, Gaukhar Turysbekova, Adilkhan Baibatsha i Gurhan Yalcin. "APPLICATION OF BIOLEACHING OF COPPER FLOTATION TAILINGS". W 22nd SGEM International Multidisciplinary Scientific GeoConference 2022. STEF92 Technology, 2022. http://dx.doi.org/10.5593/sgem2022v/4.2/s18.03.

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The lack of new deposits with a rich copper content and the depletion of old deposits, as well as the need to comply with environmental requirements, raises the issue of the need to process the tailings of metallurgical industries. In Kazakhstan was accumulated significant stocks of tailings "Borgezsay" and "Staroye". The tailings reserves are estimated at up to 1 billion tons. Sample evaluation showed that the average copper content in the tailings is 0.15-0.2%. More than 1 million tons of copper are stored in this tailings. The complexity of the structure of minerals passes through the process of leaching of these wastes. Several types of leaching in sulfuric acid were considered for processing. Methods using chalcopyrite as a catalyst or dissolution with chlorides were not economically efficient. Studies have been carried out on the use of copper bioleaching. Bioorganisms destroy various minerals of metals, ensures the transition of metals into the leaching solution. Thionic bacteria Acidithiobacillus ferrooxidans were used. The strains of these iron-oxidizing bacteria occupy an exceptional position among thionic bacteria, since in addition to the ability to autotrophic growth due to the oxidation of sulfur compounds, they can use the energy of oxidation of ferrous iron. Studies have shown that the use of these bacteria can reduce the copper content in samples from 0.2% till 0.05%, in some cases down to 0.005%. Bioleaching carried out on various tailings samples showed the effectiveness of this method.

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Exner, Ginka, Aleksandar Grigorov, Valeriy Badikov i Valentin Petrov. "Measurements of the Hardness and Young’s Modulus of the Nonlinear Optical Crystals BaGa4S7 and BaGa4Se7". W Frontiers in Optics. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/fio.2022.jtu4a.8.

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We report hardness and Young’s modulus measurements for two recently developed and very promising non-chalcopyrite mid-IR crystals, BaGa4S7 and BaGa4Se7. The hardness is 556.2 kg/mm2 for the sulfide and 336 kg/mm2 for the selenide compound.

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Exner, Ginka, Aleksandar Grigorov, Valeriy Badikov i Valentin Petrov. "Hardness and Young’s Modulus Measurements of the Nonlinear Optical Crystals BaGa2GeS6 and BaGa2GeSe6". W Advanced Solid State Lasers. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/assl.2022.jw3b.10.

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We report hardness and Young’s modulus measurements for two recently developed and very promising non-chalcopyrite mid-IR crystals, BaGa2GeS6 and BaGa2GeSe6. The hardness is 455 kg/mm2 for the sulfide and 408 kg/mm2 for the selenide compound.

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Kocak, Belgin, i Yasemin Oztekin Ciftci. "Analysis of the structural, electronic and optic properties of Ni doped MgSiP2 semiconductor chalcopyrite compound". W 9TH INTERNATIONAL PHYSICS CONFERENCE OF THE BALKAN PHYSICAL UNION (BPU-9). AIP Publishing LLC, 2016. http://dx.doi.org/10.1063/1.4944245.

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