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Gotowe bibliografie tematyczne / CARRIER RELIABILITY

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Gotowa bibliografia na temat „CARRIER RELIABILITY”

Autor: Grafiati

Data publikacji: 11 września 2023

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Rozprawy doktorskie na temat "CARRIER RELIABILITY"

1

Tsarouchas, Ioannis. "Through life reliability of a bulk carrier." Thesis, University of Glasgow, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.368736.

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2

Jiang, Wenjie 1963. "Hot-carrier reliability assessment in CMOS digital integrated circuits." Thesis, Massachusetts Institute of Technology, 1998. http://hdl.handle.net/1721.1/47514.

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3

Chan, Vei-Han. "Hot-carrier reliability evaluation for CMOS devices and circuits." Thesis, Massachusetts Institute of Technology, 1995. http://hdl.handle.net/1721.1/36532.

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4

Wang, Lei. "Reliability control of GNSS carrier-phase integer ambiguity resolution." Thesis, Queensland University of Technology, 2015. https://eprints.qut.edu.au/86976/1/Lei_Wang_Thesis.pdf.

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This research investigates how to obtain accurate and reliable positioning results with global navigation satellite systems (GNSS). The work provides a theoretical framework for reliability control in GNSS carrier phase ambiguity resolution, which is the key technique for precise GNSS positioning in centimetre levels. The proposed approach includes identification and exclusion procedures of unreliable solutions and hypothesis tests, allowing the reliability of solutions to be controlled in the aspects of mathematical models, integer estimation and ambiguity acceptance tests. Extensive experime

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5

Le, Huy X. P. "Characterization of hot-carrier reliability in analog sub-circuit design." Thesis, Massachusetts Institute of Technology, 1996. http://hdl.handle.net/1721.1/41379.

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Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1996.<br>Includes bibliographical references (leaves 52-54).<br>by Huy X.P. Le.<br>M.Eng.

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6

Kim, SeokWon Abraham 1970. "Hot-carrier reliability of MOSFETs at room and cryogenic temperature." Thesis, Massachusetts Institute of Technology, 1999. http://hdl.handle.net/1721.1/28215.

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Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1999.<br>Vita.<br>Includes bibliographical references.<br>Hot-carrier reliability is an increasingly important issue as the geometry scaling of MOSFET continues down to the sub-quarter micron regime. The power-supply voltage does not scale at the same rate as the device dimensions, and thus, the peak lateral E-field in the channel increases. Hot-carriers, generated by this high lateral E-field, gain more kinetic energy and cause damage to the device as the geometry dimension of MOSFETs

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7

Jiang, Liangjun. "HOT CARRIER EFFECT ON LDMOS TRANSISTORS." Doctoral diss., University of Central Florida, 2007. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3230.

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One of the main problems encountered when scaling down is the hot carrier induced degradation of MOSFETs. This problem has been studied intensively during the past decade, under both static and dynamic stress conditions. In this period it has evolved from a more or less academic research topic to one of the most stringent constraints guaranteeing the lifetime of sub-micron devices. New drain engineering technique leads to the extensive usage of lateral doped drain structures. In these devices the peak of the lateral field is lowered by reducing the doping concentration near the drain and by pr

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8

Le, Huy X. P. "On the methodology of assessing hot-carrier reliability of analog circuits." Thesis, Massachusetts Institute of Technology, 1999. http://hdl.handle.net/1721.1/84212.

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9

Das, A. G. Man Mohan. "Effect of wearout processes on the critical timing parameters and reliability of CMOS bistable circuits." Thesis, Durham University, 1997. http://etheses.dur.ac.uk/4701/.

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The objective of the research presented in this thesis was to investigate the effects of wearout processes on the performance and reliability of CMOS bistable circuits. The main wearout process affecting reliability of submicron MOS devices was identified as hot-carrier stress (and the resulting degradation in circuit performance). The effect of hot-carrier degradation on the resolving time leading to metastability of the bistable circuits also have been investigated. Hot-carrier degradation was identified as a major reliability concern for CMOS bistable circuits designed using submicron techn

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10

Koeppel, Gaudenz Alesch. "Reliability considerations of future energy systems : multi-carrier systems and the effect of energy storage /." Zürich : ETH, 2007. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=17058.

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