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Artykuły w czasopismach na temat „Carbon Doping in GaN”

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Data publikacji: 6 września 2023

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1

Liu, Qiang, Marcin Zając, Małgorzata Iwińska, Shuai Wang, Wenrong Zhuang, Michał Boćkowski i Xinqiang Wang. "Carbon doped semi-insulating freestanding GaN crystals by ethylene". Applied Physics Letters 121, nr 17 (24.10.2022): 172103. http://dx.doi.org/10.1063/5.0118250.

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Semi-insulating freestanding GaN crystals are excellent candidates for substrates of GaN-based power electronic devices. Carbon doping is believed to be currently the optimal way to achieve semi-insulating GaN crystals grown by halide vapor phase epitaxy (HVPE). Here, we demonstrate that ethylene is an excellent source for C doping, where the doping efficiency is much higher than that of methane. Under the same carbon mole flux, the carbon incorporation rate of ethylene is 40 times in magnitude higher than that of methane. A record highest resistivity is achieved by ethylene doping with a carbon concentration of 1.5 × 1020 cm−3. Our work demonstrates that ethylene is an excellent carbon dopant source for HVPE-grown GaN crystals.

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2

Shen, Zhaohua, Xuelin Yang, Shan Wu, Huayang Huang, Xiaolan Yan, Ning Tang, Fujun Xu i in. "Mechanism for self-compensation in heavily carbon doped GaN". AIP Advances 13, nr 3 (1.03.2023): 035026. http://dx.doi.org/10.1063/5.0133421.

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Heavy carbon (C) doping is of great significance for semi-insulating GaN in power electronics. However, the doping behaviors, especially the atomic configurations and related self-compensation mechanisms, are still under debate. Here, with the formation energy as the input parameter, the concentrations of C defects with different atomic configurations are calculated by taking the configurational entropy into account. The result shows that the concentrations of tri-carbon complexes (CNCiCN, where Ci refers to interstitial carbon) and dicarbon complexes (CNCGa) cannot be neglected under heavy doping conditions. The concentration of CNCiCN can even exceed that of CN at sufficiently high doping levels. Especially, we suggest that it is the tri-carbon complex CNCiCN, instead of the commonly expected CGa, that acts as the self-compensation centers in semi-insulating GaN under heavy C doping conditions. The results provide a fresh look on the long-standing problem about the self-compensation mechanisms in C doped GaN.

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3

Ramos, L. E., J. Furthm�ller, J. R. Leite, L. M. R. Scolfaro i F. Bechstedt. "Carbon-Based Defects in GaN: Doping Behaviour". physica status solidi (b) 234, nr 3 (grudzień 2002): 864–67. http://dx.doi.org/10.1002/1521-3951(200212)234:3<864::aid-pssb864>3.0.co;2-x.

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4

Лундин, В. В., А. В. Сахаров, Е. Е. Заварин, Д. А. Закгейм, Е. Ю. Лундина, П. Н. Брунков i А. Ф. Цацульников. "Изолирующие слои GaN, совместно легированные железом и углеродом". Письма в журнал технической физики 45, nr 14 (2019): 36. http://dx.doi.org/10.21883/pjtf.2019.14.48022.17738.

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Surface morphology and conductivity properties of semiinsulating GaN epitaxial layers are studied. Improvement of insulating properties with carbon or iron doping level increase is limited by morphology deterioration. Morphology development is different for these two cases. Co-doping with carbon and iron allows keeping planarity with significant improvement of insulating properties.

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5

As, D. J., U. K�hler, M. L�bbers, J. Mimkes i K. Lischka. "p-Type Doping of Cubic GaN by Carbon". physica status solidi (a) 188, nr 2 (grudzień 2001): 699–703. http://dx.doi.org/10.1002/1521-396x(200112)188:2<699::aid-pssa699>3.0.co;2-8.

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6

RAJAN, SIDDHARTH, ARPAN CHAKRABORTY, UMESH K. MISHRA, CHRISTIANE POBLENZ, PATRICK WALTEREIT i JAMES S. SPECK. "MBE-Grown AlGaN/GaN HEMTs on SiC". International Journal of High Speed Electronics and Systems 14, nr 03 (wrzesień 2004): 732–37. http://dx.doi.org/10.1142/s0129156404002752.

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We report on the development of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on SiC using plasma-assisted molecular beam epitaxy (MBE). In this work, we show that performance comparable to state-of-the-art AlGaN/GaN HEMTs can be achieved using MBE-grown material. Buffer leakage was an important limiting factor for these devices. The use of either carbon-doped buffers, or low Al/N ratio in the nucleation layer growth were effective in reducing buffer leakage. Studies varying the thickness and concentration of the carbon doping were carried out to determine the effect of different carbon doping profiles on the insulating and dispersive properties of buffers, On devices without field plates, at 4 GHz an output power density of 12 W/mm was obtained with a power-added efficiency (PAE) of 46 % and gain of 14 dB. 15.6 W/mm with PAE of 56 % was obtained from these devices after field-plating. Two-tone linearity measurements of these devices were also carried out. At a C/I 3 level of 30 dBc, the devices measured had an output power of 1.9 W/mm with a PAE of 53 %. The effect of the Al/N ratio in the AlN nucleation layer on buffer leakage was studied. N -rich conditions yielded highly insulating GaN buffers without carbon doping. At 4 GHz, devices without field plates delivered 4.8 W/mm with a PAE of 62 %. At a higher drain bias (50 V), 8.1 W/mm with a PAE of 38 % was achieved.

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7

As, D. J., E. Tschumak, H. Pöttgen, O. Kasdorf, J. W. Gerlach, H. Karl i K. Lischka. "Carbon doping of non-polar cubic GaN by CBr4". Journal of Crystal Growth 311, nr 7 (marzec 2009): 2039–41. http://dx.doi.org/10.1016/j.jcrysgro.2008.11.013.

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8

Wu, Shan, Xuelin Yang, Zhenxing Wang, Zhongwen Ouyang, Huayang Huang, Qing Zhang, Qiuyu Shang i in. "Influence of intrinsic or extrinsic doping on charge state of carbon and its interaction with hydrogen in GaN". Applied Physics Letters 120, nr 24 (13.06.2022): 242101. http://dx.doi.org/10.1063/5.0093514.

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It has been established that the formation of point defects and their behaviors could be regulated by growth details such as growth techniques and growth conditions. In this work, we prove that C doping approaches have great influence on the charge state of [Formula: see text], thus the interaction between H and C in GaN. For GaN with intrinsic C doping, which is realized by reducing the V/III ratio, [Formula: see text] mainly exists in the form of [Formula: see text] charged from the higher concentration of [Formula: see text] and, thus, may attract [Formula: see text] by coulomb interaction. Whereas for the extrinsically C doped GaN with propane as the doping source, the concentration of [Formula: see text] is reduced, and [Formula: see text] mainly exists in neutral charge state and, thus, nearly does not attract H ions. Therefore, we demonstrate that the interplay between H and C atoms is weaker for the extrinsically C doped GaN compared to the intrinsically doped GaN, thus gives a clear picture about the different charge states of [Formula: see text] and the formation of C–H complexes in GaN with different C doping approaches.

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9

Schmult, S., H. Schürmann, G. Schmidt, P. Veit, F. Bertram, J. Christen, A. Großer i T. Mikolajick. "Correlating yellow and blue luminescence with carbon doping in GaN". Journal of Crystal Growth 586 (maj 2022): 126634. http://dx.doi.org/10.1016/j.jcrysgro.2022.126634.

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10

Li, Xun, Örjan Danielsson, Henrik Pedersen, Erik Janzén i Urban Forsberg. "Precursors for carbon doping of GaN in chemical vapor deposition". Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 33, nr 2 (marzec 2015): 021208. http://dx.doi.org/10.1116/1.4914316.

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11

Fariza, Aqdas, Andreas Lesnik, Jürgen Bläsing, Marc P. Hoffmann, Florian Hörich, Peter Veit, Hartmut Witte, Armin Dadgar i André Strittmatter. "On reduction of current leakage in GaN by carbon-doping". Applied Physics Letters 109, nr 21 (21.11.2016): 212102. http://dx.doi.org/10.1063/1.4968823.

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12

As, D. J., D. G. Pacheco-Salazar, S. Potthast i K. Lischka. "Carbon doping of cubic GaN under gallium-rich growth conditions". physica status solidi (c), nr 7 (grudzień 2003): 2537–40. http://dx.doi.org/10.1002/pssc.200303547.

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13

Lisker, M., A. Krtschil, H. Witte, J. Christen, A. Krost, U. Birkle, S. Einfeldt i D. Hommel. "Influence of Carbon Doping on the Photoconductivity in GaN Layers". physica status solidi (b) 216, nr 1 (listopad 1999): 593–97. http://dx.doi.org/10.1002/(sici)1521-3951(199911)216:1<593::aid-pssb593>3.0.co;2-4.

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14

Danielsson, Örjan, Xun Li, Lars Ojamäe, Erik Janzén, Henrik Pedersen i Urban Forsberg. "A model for carbon incorporation from trimethyl gallium in chemical vapor deposition of gallium nitride". Journal of Materials Chemistry C 4, nr 4 (2016): 863–71. http://dx.doi.org/10.1039/c5tc03989d.

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15

Amilusik, Mikolaj, Marcin Zajac, Tomasz Sochacki, Boleslaw Lucznik, Michal Fijalkowski, Malgorzata Iwinska, Damian Wlodarczyk, Ajeesh Kumar Somakumar, Andrzej Suchocki i Michal Bockowski. "Carbon and Manganese in Semi-Insulating Bulk GaN Crystals". Materials 15, nr 7 (23.03.2022): 2379. http://dx.doi.org/10.3390/ma15072379.

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Co-doping with manganese and carbon was performed in gallium nitride grown by halide vapor phase epitaxy method. Native seeds of high structural quality were used. The crystallized material was examined in terms of its structural, optical, and electrical properties. For that purpose, different characterization methods: x-ray diffraction, Raman spectroscopy, low-temperature photoluminescence, and temperature-dependent Hall effect measurements, were applied. The physical properties of the co-doped samples were compared with the properties of crystals grown in the same reactor, on similar seeds, but doped only with manganese or carbon. A comparison of the electrical and optical properties allowed to determine the role of manganese and carbon in doped and co-doped gallium nitride crystals.

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16

Gao, Z., M. Meneghini, F. Rampazzo, M. Rzin, C. De Santi, G. Meneghesso i E. Zanoni. "Reliability comparison of AlGaN/GaN HEMTs with different carbon doping concentration". Microelectronics Reliability 100-101 (wrzesień 2019): 113489. http://dx.doi.org/10.1016/j.microrel.2019.113489.

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17

Gamov, I., E. Richter, M. Weyers, G. Gärtner i K. Irmscher. "Carbon doping of GaN: Proof of the formation of electrically active tri-carbon defects". Journal of Applied Physics 127, nr 20 (29.05.2020): 205701. http://dx.doi.org/10.1063/5.0010844.

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18

Lin, Wei, Maojun Wang, Haozhe Sun, Bing Xie, Cheng P. Wen, Yilong Hao i Bo Shen. "Suppressing Buffer-Induced Current Collapse in GaN HEMTs with a Source-Connected p-GaN (SCPG): A Simulation Study". Electronics 10, nr 8 (15.04.2021): 942. http://dx.doi.org/10.3390/electronics10080942.

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Carbon doping in the buffer of AlGaN/GaN high-electron-mobility transistors (HEMTs) leads to the notorious current collapse phenomenon. In this paper, an HEMT structure with a source-connected p-GaN (SCPG) embedded in the carbon-doped semi-insulating buffer is proposed to suppress the buffer-induced current collapse effect. Two-dimensional transient simulation was carried out to show the successful suppression of buffer-induced current collapse in the SCPG-HEMTs compared with conventional HEMTs. The mechanism of suppressing dynamic on-resistance degradation by ejecting holes from the SCPG into the high resistive buffer layer after off-state stress is illustrated based on energy band diagrams. This paper contributes an innovative device structure to potentially solve the buffer-induced degradation of the dynamic on-resistance in GaN power devices.

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19

Liang, Feng, Degang Zhao, Desheng Jiang, Zongshun Liu, Jianjun Zhu, Ping Chen, Jing Yang, Shuangtao Liu, Yao Xing i Liqun Zhang. "Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN". Nanomaterials 8, nr 12 (10.12.2018): 1026. http://dx.doi.org/10.3390/nano8121026.

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Both yellow luminescence (YL) and blue luminescence (BL) bands of GaN films have been investigated for decades, but few works report the relationship between them. In this study, two sets of GaN samples grown via metalorganic chemical vapor deposition (MOCVD) were investigated. A close relationship was found between the YL and BL bands for unintentionally doped GaN and Si-doped GaN samples, both of which were grown without intentional acceptor doping. It was found that the intensity ratio of blue luminescence to yellow luminescence (IBL/IYL) decreases sharply with the increase in carbon impurity concentration, even though both IBL and IYL increase obviously. It was also found that IBL/IYL decreases sharply with the increase in Si doping concentration. It is suggested that the C and Si impurities play important role in linkage and competition of the blue and yellow luminescence.

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20

Koller, Christian, Gregor Pobegen, Clemens Ostermaier i Dionyz Pogany. "Effect of Carbon Doping on Charging/Discharging Dynamics and Leakage Behavior of Carbon-Doped GaN". IEEE Transactions on Electron Devices 65, nr 12 (grudzień 2018): 5314–21. http://dx.doi.org/10.1109/ted.2018.2872552.

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21

Joshi, Vipin, Shree Prakash Tiwari i Mayank Shrivastava. "Part I: Physical Insight Into Carbon-Doping-Induced Delayed Avalanche Action in GaN Buffer in AlGaN/GaN HEMTs". IEEE Transactions on Electron Devices 66, nr 1 (styczeń 2019): 561–69. http://dx.doi.org/10.1109/ted.2018.2878770.

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22

Zimmermann, F., J. Beyer, F. C. Beyer, G. Gärtner, I. Gamov, K. Irmscher, E. Richter, M. Weyers i J. Heitmann. "A carbon-doping related luminescence band in GaN revealed by below bandgap excitation". Journal of Applied Physics 130, nr 5 (7.08.2021): 055703. http://dx.doi.org/10.1063/5.0053940.

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23

Fernandez, J. R. L., F. Cerdeira, E. A. Meneses, J. A. N. T. Soares, O. C. Noriega, J. R. Leite, D. J. As i in. "Near band-edge optical properties of cubic GaN with and without carbon doping". Microelectronics Journal 35, nr 1 (styczeń 2004): 73–77. http://dx.doi.org/10.1016/s0026-2692(03)00226-x.

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24

Narita, Tetsuo, Daigo Kikuta, Hiroko Iguchi, Kenji Ito, Kazuyoshi Tomita, Tsutomu Uesugi i Tetsu Kachi. "Reduction of peak electric field strength in GaN-HEMT with carbon doping layer". physica status solidi (c) 9, nr 3-4 (13.01.2012): 915–18. http://dx.doi.org/10.1002/pssc.201100331.

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25

Rathkanthiwar, Shashwat, Pegah Bagheri, Dolar Khachariya, Seiji Mita, Spyridon Pavlidis, Pramod Reddy, Ronny Kirste, James Tweedie, Zlatko Sitar i Ramón Collazo. "Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices". Applied Physics Express 15, nr 5 (14.04.2022): 051003. http://dx.doi.org/10.35848/1882-0786/ac6566.

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Abstract We demonstrate controlled Si doping in the low doping range of 5 × 1015–2.5 × 1016 cm−3 with mobility >1000 cm2 V−1 s−1 in GaN films grown by metalorganic chemical vapor deposition. The carbon-related compensation and mobility collapse were prevented by controlling the electrochemical potential near the growth surface via chemical potential control (CPC) and defect quasi-Fermi level (dQFL) point-defect management techniques. While the CPC was targeted to reduce the net CN concentration, the dQFL control was used to reduce the fraction of C atoms with the compensating configuration, i.e. C N − 1 . The low compensating acceptor concentration was confirmed via temperature-dependent Hall effect analysis and capacitance–voltage measurements.

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26

Wampler, W. R., A. M. Armstrong i G. Vizkelethy. "Carrier capture and emission by substitutional carbon impurities in GaN vertical diodes". Journal of Applied Physics 132, nr 9 (7.09.2022): 095702. http://dx.doi.org/10.1063/5.0106905.

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A model was developed for the operation of a GaN pn junction vertical diode which includes rate equations for carrier capture and thermally activated emission by substitutional carbon impurities and carrier generation by ionizing radiation. The model was used to simulate the effect of ionizing radiation on the charge state of carbon. These simulations predict that with no applied bias, carbon is negatively charged in the n-doped layer, thereby compensating n-doping as experimentally observed in diodes grown by metal-organic chemical vapor deposition. With reverse bias, carbon remains negative in the depletion region, i.e., compensation persists in the absence of ionization but is neutralized by exposure to ionizing radiation. This increases charge density in the depletion region, decreases the depletion width, and increases the capacitance. The predicted increase in capacitance was experimentally observed using a pulsed 70 keV electron beam as the source of ionization. In additional confirming experiments, the carbon charge-state conversion was accomplished by photoionization using sub-bandgap light or by the capture of holes under forward bias.

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27

Fariza, A., A. Lesnik, S. Neugebauer, M. Wieneke, J. Hennig, J. Bläsing, H. Witte, A. Dadgar i A. Strittmatter. "Leakage currents and Fermi-level shifts in GaN layers upon iron and carbon-doping". Journal of Applied Physics 122, nr 2 (14.07.2017): 025704. http://dx.doi.org/10.1063/1.4993180.

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28

Rossetto, I., F. Rampazzo, M. Meneghini, M. Silvestri, C. Dua, P. Gamarra, R. Aubry i in. "Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs". Microelectronics Reliability 54, nr 9-10 (wrzesień 2014): 2248–52. http://dx.doi.org/10.1016/j.microrel.2014.07.092.

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29

Poblenz, C., P. Waltereit, S. Rajan, S. Heikman, U. K. Mishra i J. S. Speck. "Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 22, nr 3 (2004): 1145. http://dx.doi.org/10.1116/1.1752907.

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30

Green, D. S., U. K. Mishra i J. S. Speck. "Carbon doping of GaN with CBr4 in radio-frequency plasma-assisted molecular beam epitaxy". Journal of Applied Physics 95, nr 12 (15.06.2004): 8456–62. http://dx.doi.org/10.1063/1.1755431.

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31

Armitage, R., Q. Yang, H. Feick i E. R. Weber. "Evaluation of CCl4 and CS2 as carbon doping sources in MBE growth of GaN". Journal of Crystal Growth 263, nr 1-4 (marzec 2004): 132–42. http://dx.doi.org/10.1016/j.jcrysgro.2003.11.091.

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32

Tanaka, Daiki, Kenji Iso i Jun Suda. "Comparative study of electrical properties of semi-insulating GaN substrates grown by hydride vapor phase epitaxy and doped with Fe, C, or Mn". Journal of Applied Physics 133, nr 5 (7.02.2023): 055701. http://dx.doi.org/10.1063/5.0131470.

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The electrical properties of semi-insulating GaN substrates doped with iron (Fe), carbon (C), or manganese (Mn) grown by hydride vapor phase epitaxy are presented. Hall effect measurements were performed at temperatures ranging from 300 to 800 K. At all of the investigated temperatures, the Mn-doped samples exhibited the highest resistivity. The Fe-doped samples showed n-type conduction, whereas the C-doped samples and the Mn-doped sample with a Mn concentration of 1 × 1019 cm−3 showed p-type conduction. A detailed analysis of the temperature dependence of the carrier concentration showed that all of the impurities formed acceptor levels at EC −(0.59–0.61) eV for Fe, at EV +(0.90–1.07) eV for C, and at EV +1.55 eV for Mn. The Mn-doped sample with a Mn concentration of 8 × 1017 cm−3 showed a negative Hall coefficient (suggesting n-type conduction) at high temperatures, contradicting the formation of acceptor levels by Mn. We successfully explained the negative value by considering the conduction of both holes and electrons with different mobilities. On the basis of the results, we calculated the relationship between the resistivity and doping concentration for each dopant. The calculations indicated that the highest resistivity can be realized in Mn-doped GaN with an optimized doping concentration (depending on the residual donor concentration). All of the dopants can effectively realize high resistivity at room temperature. Mn is an effective dopant for attaining high resistivity, especially at high temperatures (e.g., 800 K).

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33

Zagni, Nicolò, Alessandro Chini, Francesco Maria Puglisi, Paolo Pavan i Giovanni Verzellesi. "On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs". Micromachines 12, nr 6 (16.06.2021): 709. http://dx.doi.org/10.3390/mi12060709.

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The intentional doping of lateral GaN power high electron mobility transistors (HEMTs) with carbon (C) impurities is a common technique to reduce buffer conductivity and increase breakdown voltage. Due to the introduction of trap levels in the GaN bandgap, it is well known that these impurities give rise to dispersion, leading to the so-called “current collapse” as a collateral effect. Moreover, first-principles calculations and experimental evidence point out that C introduces trap levels of both acceptor and donor types. Here, we report on the modeling of the donor/acceptor compensation ratio (CR), that is, the ratio between the density of donors and acceptors associated with C doping, to consistently and univocally reproduce experimental breakdown voltage (VBD) and current-collapse magnitude (ΔICC). By means of calibrated numerical device simulations, we confirm that ΔICC is controlled by the effective trap concentration (i.e., the difference between the acceptor and donor densities), but we show that it is the total trap concentration (i.e., the sum of acceptor and donor densities) that determines VBD, such that a significant CR of at least 50% (depending on the technology) must be assumed to explain both phenomena quantitatively. The results presented in this work contribute to clarifying several previous reports, and are helpful to device engineers interested in modeling C-doped lateral GaN power HEMTs.

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34

Knetzger, Michael, Elke Meissner, Joff Derluyn, Marianne Germain i Jochen Friedrich. "Investigations of Critical Structural Defects in Active Layers of GaN-on-Si for Power Electronic Devices". Solid State Phenomena 242 (październik 2015): 417–20. http://dx.doi.org/10.4028/www.scientific.net/ssp.242.417.

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The influence of structural defects in the active layer of GaN-on-Si substrates on the vertical leakage current was studied. The structural defects were analyzed by analytical scanning electron microscopy by means of cathodoluminescence (CL). The leakage current was determined by vertical I-V measurements.Two possibilities were found, which give potential explanations for the variations of the vertical leakage current: i) Threading dislocations, which may partially form leakage paths, were detected by CL imaging. ii) Variations of the carbon doping, which is used to tune GaN to a semi insulating material were revealed by CL spectroscopy.

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35

Xu, Yue, Xuelin Yang, Peng Zhang, Xingzhong Cao, Yao Chen, Shiping Guo, Shan Wu i in. "Influence of intrinsic or extrinsic doping on lattice locations of carbon in semi-insulating GaN". Applied Physics Express 12, nr 6 (14.05.2019): 061002. http://dx.doi.org/10.7567/1882-0786/ab1c19.

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36

Yacoub, H., C. Mauder, S. Leone, M. Eickelkamp, D. Fahle, M. Heuken, H. Kalisch i A. Vescan. "Effect of Different Carbon Doping Techniques on the Dynamic Properties of GaN-on-Si Buffers". IEEE Transactions on Electron Devices 64, nr 3 (marzec 2017): 991–97. http://dx.doi.org/10.1109/ted.2017.2647841.

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37

Lundin, W. V., A. V. Sakharov, E. E. Zavarin, D. Yu Kazantsev, B. Ya Ber, M. A. Yagovkina, P. N. Brunkov i A. F. Tsatsulnikov. "Study of GaN doping with carbon from propane in a wide range of MOVPE conditions". Journal of Crystal Growth 449 (wrzesień 2016): 108–13. http://dx.doi.org/10.1016/j.jcrysgro.2016.06.002.

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Wang, Yaxin, Takashi Teramoto i Kazuhiro Ohkawa. "Effects of intentional oxygen and carbon doping in MOVPE-grown GaN layers on photoelectric properties". physica status solidi (b) 252, nr 5 (16.03.2015): 1116–20. http://dx.doi.org/10.1002/pssb.201451495.

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Tzou, An-Jye, Dan-Hua Hsieh, Szu-Hung Chen, Yu-Kuang Liao, Zhen-Yu Li, Chun-Yen Chang i Hao-Chung Kuo. "An Investigation of Carbon-Doping-Induced Current Collapse in GaN-on-Si High Electron Mobility Transistors". Electronics 5, nr 4 (2.06.2016): 28. http://dx.doi.org/10.3390/electronics5020028.

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Wang, Hongyue, Po-Chun Hsu, Ming Zhao, Eddy Simoen, Arturo Sibaja-Hernandez i Jinyan Wang. "Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers With Different Carbon Doping Concentration". IEEE Transactions on Electron Devices 67, nr 11 (listopad 2020): 4827–33. http://dx.doi.org/10.1109/ted.2020.3025261.

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Knetzger, Michael, Elke Meissner, Joff Derluyn, Marianne Germain i Jochen Friedrich. "Correlation of carbon doping variations with the vertical breakdown of GaN-on-Si for power electronics". Microelectronics Reliability 66 (listopad 2016): 16–21. http://dx.doi.org/10.1016/j.microrel.2016.09.014.

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Zhang, Haitao, Xuanwu Kang, Yingkui Zheng, Hao Wu, Ke Wei, Xinyu Liu, Tianchun Ye i Zhi Jin. "Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode". Micromachines 12, nr 11 (22.10.2021): 1296. http://dx.doi.org/10.3390/mi12111296.

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This work investigates the transient characteristics of an AlGaN/GaN lateral Schottky barrier diode (SBD) and its recovery process with a dedicated dynamic measurement system. Both static and dynamic characteristics were measured, analyzed with the consideration of acceptor/donor traps in the C-doped buffer and GaN channel, and verified by Silvaco TCAD (technology computer aided design) simulations. The energy band, electric field, and electron concentration were monitored in the transient simulation to study the origin of the current collapse in the SBD. Using the verified model, the impact of carbon doping concentration in the buffer and the thickness of the unintentionally doped (UID) GaN channel in the transient behavior was estimated. Several observations were revealed. Firstly, the traps in the GaN channel and buffer layer have a significant impact on the current collapse of the device. A severe deterioration of current collapse can be observed in the SBDs with increasing density of acceptor-like traps. Secondly, the current collapse increases with the thinner UID GaN channel layer. This well-performed simulation model shows promise to be utilized for the dynamic performance optimization of GaN lateral devices.

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Birkle, U., M. Fehrer, V. Kirchner, S. Einfeldt, D. Hommel, S. Strauf, P. Michler i J. Gutowski. "Studies on Carbon as Alternative P-Type Dopant for Gallium Nitride". MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 526–31. http://dx.doi.org/10.1557/s1092578300002994.

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GaN layers were grown by molecular beam epitaxy and doped with carbon of nominal concentrations ranging from 1016 cm−3 to 1020 cm−3. The incorporation of carbon leads to a reduction of the background electron concentration by one order of magnitude but the material remains n-type. For high carbon concentrations a re-increase of the carrier concentration is observed which is related to selfcompensation. Investigations of the donor-acceptor-pair luminescence show that doping with carbon is accompanied by the generation of a new donor exhibiting a thermal activation energy of about 55 meV. Layers grown by atomic layer epitaxy are marked by an increased intensity of the donor-acceptor-pair band luminescence which is attributed to the enforced incorporation of carbon onto the nitrogen sublattice. The yellow luminescence is found to be a typical feature of all carbon doped layers in contrast to nominally undoped samples.

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Wassner, Maximilian, Markus Eckardt, Andreas Reyer, Thomas Diemant, Michael S. Elsaesser, R. Jürgen Behm i Nicola Hüsing. "Synthesis of amorphous and graphitized porous nitrogen-doped carbon spheres as oxygen reduction reaction catalysts". Beilstein Journal of Nanotechnology 11 (2.01.2020): 1–15. http://dx.doi.org/10.3762/bjnano.11.1.

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Amorphous and graphitized nitrogen-doped (N-doped) carbon spheres are investigated as structurally well-defined model systems to gain a deeper understanding of the relationship between synthesis, structure, and their activity in the oxygen reduction reaction (ORR). N-doped carbon spheres were synthesized by hydrothermal treatment of a glucose solution yielding carbon spheres with sizes of 330 ± 50 nm, followed by nitrogen doping via heat treatment in ammonia atmosphere. The influence of a) varying the nitrogen doping temperature (550–1000 °C) and b) of a catalytic graphitization prior to nitrogen doping on the carbon sphere morphology, structure, elemental composition, N bonding configuration as well as porosity is investigated in detail. For the N-doped carbon spheres, the maximum nitrogen content was found at a doping temperature of 700 °C, with a decrease of the N content for higher temperatures. The overall nitrogen content of the graphitized N-doped carbon spheres is lower than that of the amorphous carbon spheres, however, also the microporosity decreases strongly with graphitization. Comparison with the electrocatalytic behavior in the ORR shows that in addition to the N-doping, the microporosity of the materials is critical for an efficient ORR.

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Yacoub, Hady, Thorsten Zweipfennig, Gerrit Lukens, Hannes Behmenburg, Dirk Fahle, Martin Eickelkamp, Michael Heuken, Holger Kalisch i Andrei Vescan. "Effect of Carbon Doping Level on Static and Dynamic Properties of AlGaN/GaN Heterostructures Grown on Silicon". IEEE Transactions on Electron Devices 65, nr 8 (sierpień 2018): 3192–98. http://dx.doi.org/10.1109/ted.2018.2850066.

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Ni, Yiqiang, Liuan Li, Liang He, Taotao Que, Zhenxing Liu, Lei He, Zhisheng Wu i Yang Liu. "Dependence of carbon doping concentration on the strain-state and properties of GaN grown on Si substrate". Superlattices and Microstructures 120 (sierpień 2018): 720–26. http://dx.doi.org/10.1016/j.spmi.2018.06.012.

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Huang, Yuanchao, Rong Wang, Naifu Zhang, Yiqiang Zhang, Deren Yang i Xiaodong Pi. "Effect of hydrogen on the unintentional doping of 4H silicon carbide". Journal of Applied Physics 132, nr 15 (21.10.2022): 155704. http://dx.doi.org/10.1063/5.0108726.

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High-purity semi-insulating (HPSI) 4H silicon carbide (4H-SiC) single crystals are critical semiconductor materials for fabricating GaN-based high-frequency devices. One of the major challenges for the growth of HPSI 4H-SiC single crystals is the unintentional doping of nitrogen (N) and boron (B). The addition of hydrogen has been supposed to mitigate unintentional doping. However, the underlying mechanism has not been well understood. In this work, the role of hydrogen in the growth of HPSI 4H-SiC single crystals is investigated by first-principles formation-energy calculations. We find that the addition of hydrogen significantly mitigates N doping while hardly affecting B doping. Once hydrogen is added, hydrogen may adsorb at the growing surface of 4H-SiC, leading to surface passivation. Since N can react with hydrogen to form stable NH3 (g), the chemical potential of N is reduced, so that the formation energy of N in 4H-SiC increases. Hence, the critical partial pressure of nitrogen required for the growth of HPSI 4H-SiC single crystals increases by two orders of magnitude. Moreover, we reveal that the adjustment of relative B and N doping concentrations has a substantial impact on the Fermi energy of HPSI 4H-SiC. When the doping concentration of N is higher than that of B, N interacts with carbon vacancies (VC) to pin the Fermi energy at Z1/2. When the doping concentration of B is higher than that of N, the Fermi energy is pinned at EH6/7. This explains that the resistivity of unintentionally doped HPSI 4H-SiC may vary.

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Hirota, R., K. Kushida, Jun Takahashi i Kazuo Kuriyama. "Carbon doping by ion implantation and C2H6 gas in GaN: Rutherford backscattering/channeling, Raman scattering and photoluminescence studies". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 219-220 (czerwiec 2004): 792–97. http://dx.doi.org/10.1016/j.nimb.2004.01.165.

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Li, Yuqi, Yang Ou, Jianjun Wu i Yu Zhang. "Experimental Investigation on Plume Characteristics of PTFE-Filled Carbon, Graphite, Graphene for Laser-Assisted Pulsed Plasma Thruster". Applied Sciences 13, nr 16 (16.08.2023): 9283. http://dx.doi.org/10.3390/app13169283.

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This paper presents an investigation into the plume characteristics of composite propellants fabricated by polytetrafluoroethylene (PTFE) filled with different carbon additives (nano-carbon powder, graphite, and graphene) under laser irradiation in a vacuum environment. The dynamic plumes generated by the laser ablation of different modified propellant samples were captured using a high-speed camera, and the feature parameters of the plumes were extracted by image processing. The results indicated that doping carbon particles in PTFE enhanced the quality of the plasma plumes. The plume area increased up to a certain value and then stabilized, while end of plume clusters remained for a short time. Further analysis revealed that the propellant sample doped with graphene exhibited the maximum plume length and expansion rate, whereas the propellant sample doped with nano-carbon demonstrated the largest plume area. Moreover, a higher graphene doping ratio promoted greater plume length, expansion speed, and plume area. However, when the doping ratio exceeded 3%, the gain of the plume parameters gradually became saturated, and the optimal doping ratio appeared to be 5%.

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Li, Xun, i Songran Zhu. "Properties of carbon-doped GaN using isobutane as a dopant". Journal of Physics: Conference Series 2011, nr 1 (1.09.2021): 012083. http://dx.doi.org/10.1088/1742-6596/2011/1/012083.

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