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Data publikacji: 6 września 2023

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1

Ciarkowski, Timothy A. "Low Impurity Content GaN Prepared via OMVPE for Use in Power Electronic Devices: Connection Between Growth Rate, Ammonia Flow, and Impurity Incorporation." Diss., Virginia Tech, 2019. http://hdl.handle.net/10919/94551.

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GaN has the potential to revolutionize the high power electronics industry, enabling high voltage applications and better power conversion efficiency due to its intrinsic material properties and newly available high purity bulk substrates. However, unintentional impurity incorporation needs to be reduced. This reduction can be accomplished by reducing the source of contamination and exploration of extreme growth conditions which reduce the incorporation of these contaminants. Newly available bulk substrates with low threading dislocations allow for better study of material properties, as oppos
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2

Ashourirad, Babak. "HETEROATOM-DOPED NANOPOROUS CARBONS: SYNTHESIS, CHARACTERIZATION AND APPLICATION TO GAS STORAGE AND SEPARATION." VCU Scholars Compass, 2015. http://scholarscompass.vcu.edu/etd/4062.

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Activated carbons as emerging classes of porous materials have gained tremendous attention because of their versatile applications such as gas storage/separations sorbents, oxygen reduction reaction (ORR) catalysts and supercapacitor electrodes. This diversity originates from fascinating features such as low-cost, lightweight, thermal, chemical and physical stability as well as adjustable textural properties. More interestingly, sole heteroatom or combinations of various elements can be doped into their framework to modify the surface chemistry. Among all dopants, nitrogen as the most frequent
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3

Kleinsorge, Britta Yvonne. "Doping of amorphous carbon." Thesis, University of Cambridge, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.621744.

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RIBEIRO, MARIO LUIS PIRES GONCALVES. "CARBON DOPING IN INAIAS EPITAXIAL LAYERS." PONTIFÍCIA UNIVERSIDADE CATÓLICA DO RIO DE JANEIRO, 2002. http://www.maxwell.vrac.puc-rio.br/Busca_etds.php?strSecao=resultado&nrSeq=2651@1.

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COORDENAÇÃO DE APERFEIÇOAMENTO DO PESSOAL DE ENSINO SUPERIOR<br>ERICSSON DO BRASIL<br>É reconhecido o potencial de usar carbono como um dopante tipo p em InAlAs devido a obtenção de elevados níveis de dopagem [1,2]. Entretanto, níveis elevados de dopagem só são alcançados em baixas temperaturas de crescimento (Tg inferiores a 600°C). Nessas temperaturas, as camadas crescidas apresentam qualidade ótica inferior quando comparadas com camadas crescidas em temperaturas mais altas, o que é prejudicial para dispositivos de optoeletrônica. Neste trabalho, é apresentada uma investigação sistemát
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5

Khromov, Sergey. "Doping effects on the structural and optical properties of GaN." Doctoral thesis, Linköpings universitet, Tunnfilmsfysik, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-100760.

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Today there is a strong drive towards higher efficiency light emitters and devices for power electronics based on GaN and its ternary compounds. Device performance can be improved in several ways on the material level. Development of bulk GaN to substitute sapphire and SiC as substrate materials can allow lower defect density epitaxial GaN layers to be grown. Using nonpolar homoepitaxial layers alleviates the problem of polarization fields present in polar GaN epilayers. This thesis advances the field by attacking outstanding problems related to doping and its influence on structural and optic
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6

彭澤厚 and Chak-hau Pang. "A study of Mg doping in GaN during molecular beam epitaxy." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2001. http://hub.hku.hk/bib/B31226619.

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7

Pang, Chak-hau. "A study of Mg doping in GaN during molecular beam epitaxy /." Hong Kong : University of Hong Kong, 2001. http://sunzi.lib.hku.hk/hkuto/record.jsp?B25059075.

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8

Alluqmani, Saleh Marzoq B. "Growth and doping of carbon nanotubes and graphene." Thesis, Durham University, 2015. http://etheses.dur.ac.uk/10949/.

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Single walled carbon nanotubes (SWCNTs) have been doped with nitrogen (N) by two ion-mediated approaches: directly through irradiation with N+ ions and by a novel indirect technique, creating defects through Ar+ ion irradiation which then react with nitrogen upon annealing in a N2 atmosphere. X-ray photoelectron spectroscopy (XPS) was then employed to determine the chemical environment of the nitrogen within the resulting SWCNT material. Depending upon the exact preparation conditions, nitrogen in graphitic (substitutional) pyridinic and pyrrolic configurations could be identified. Nitrogen do
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9

Francis, Smita. "Optimisation of doping profiles for mm-wave GaAs and GaN gunn diodes." Thesis, Cape Peninsula University of Technology, 2017. http://hdl.handle.net/20.500.11838/2568.

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Thesis (DTech (Electrical Engineering))--Cape Peninsula University of Technology, 2017.<br>Gunn diodes play a prominent role in the development of low-cost and reliable solid-state oscillators for diverse applications, such as in the military, security, automotive and consumer electronics industries. The primary focus of the research presented here is the optimisation of GaAs and GaN Gunn diodes for mm-wave operations, through rigorous Monte Carlo particle simulations. A novel, empirical technique to determine the upper operational frequency limit of devices based on the transferred elec
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10

Khromov, Sergey. "The Effect of Mg Doping on Optical and Structural Properties of GaN." Licentiate thesis, Linköpings universitet, Tunnfilmsfysik, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-75428.

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Mg is the most commonly used p-type dopant for GaN, however the impact of Mg incorporation on structural, morphological and optical properties of GaN is still not fully understood. Another research challenge is to understand and improve the properties of nonpolar GaN as it allows the fabrication of more efficient optoelectronic devices due to the absence of polarization fields. Thus, the aim of this thesis was to explore the effect of Mg doping on polar c-plane GaN in Paper 1 and nonpolar m-plane GaN in Paper 2. The samples were grown by metal-organic vapor phase epitaxy with varying Mg conten
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11

Fang, Zhihua. "N and p-type doping of GaN nanowires : from growth to electrical properties." Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAY007/document.

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Les nanostructures à base de nitrures d’éléments III suscitent un intérêt croissant, en raison de leurs propriétés singulières et de leurs applications technologiques potentielles, dans les diodes électroluminescentes (LED) notamment. La maîtrise et le contrôle du dopage de ces nanostructures est un enjeu crucial, mais difficile. A ce sujet, cette thèse apporte une contribution nouvelle, en explorant le processus de dopage de type n et p des nanofils (NFs) de GaN crus par épitaxie par jets moléculaires (EJM). En particulier, les propriétés électriques de ces structures ont été caractérisées pa
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12

Sanwick, Alexis. "Heteroatom-Doped Chemical Vapor Deposition Carbon Ultramicroelectrodes." Digital Commons @ East Tennessee State University, 2020. https://dc.etsu.edu/honors/592.

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Metal nanoparticles have been a primary focus in areas of catalysis and electrocatalysis applications as a result of their large surface area-to-volume ratios. While there is an increased interest in understanding the properties and behaviors of metal nanoparticles, they can become expensive over time. Recent research has incorporated the idea of using heteroatom-doped materials as a cheaper catalytic alternative to metal nanoparticles. In this study nitrogen-doping and phosphorous-doping techniques were applied to chemical vapor-deposited carbon ultramicroelectrodes in order to study the elec
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13

Kendrick, Chito Edsel. "Revisiting Nitride Semiconductors: Epilayers, p-Type Doping and Nanowires." Thesis, University of Canterbury. Electrical and Computer Engineering, 2008. http://hdl.handle.net/10092/2108.

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This dissertation investigates the growth of high quality GaN and InN thin films by plasma assisted molecular beam epitaxy (PAMBE). It also explores the growth of self-seeded GaN branching nanowires and p-type doping of InN, two topics of particular interest at present. The growth of high quality III-Nitride semiconductor thin films have been shown to be dependent on the group-III (metal) to nitrogen ratio. A metal-rich growth environment enhances the diffusion of the group-III adatoms through the formation of a group-III adlayer. By using a metal-rich growth environment, determined by growth
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14

Liang, Meng Suan. "Carbon doping in GaAs, AlGaAs, InGaAs and distributed Bragg reflectors." Thesis, University of Liverpool, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.399255.

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15

Anwar, Abdul Waheed. "Investigation of doping and photoexcitation in carbon nanotubes using Raman spectroscopy." Toulouse 3, 2011. http://thesesups.ups-tlse.fr/1156/.

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La spectroscopie Raman est une technique de caractérisation non destructive appropriée pour l'étude des nanotubes des carbone. Des différences dans le décalage spectral des bandes Raman D et G, correspondant aux effets anharmoniques, sont observées lors d'un chauffage des nanotubes de carbone par irradiation photonique intense ou en faisant varier la température d'un thermostat. Les modifications spectrales du mode D sont attribués à des modifications du processus de double résonance Raman en raison de la variation de la structure de bande électronique provoquée par la creation des excitons. L
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16

Sojoudi, Hossein. "The synthesis, doping, and characterization of graphene films." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/50125.

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Graphene, a two-dimensional counterpart of three-dimensional graphite, has attracted significant interest, due to its distinctive electrical and mechanical properties, for developing electronic, optoelectronic, and sensor technologies. In general, doping of graphene is important, as it gives rise to p-type and n-type materials, and it adjusts the work function of the graphene. This adjustment is necessary in order to control charge injection and collection in devices such as solar cells and light emitting devices. Current methods for graphene doping involve high temperature process or interact
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17

Pinto, Hugo Manuel. "Defects and dopants in carbon related materials." Thesis, University of Exeter, 2012. http://hdl.handle.net/10036/3601.

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This thesis presents theoretical studies of the optical and electronic properties of defects in diamond and of the mechanisms of doping graphene. The birefringence of the four petalled defect commonly observed in CVD diamond is explained by four linear arrays of dislocations along ⟨110⟩ directions with ⟨110⟩ Burgers vectors. Such an arrangement of dislocations reproduces the extension and the features of the birefringence patterns observed experimentally. Density functional theory via the AIMPRO code was used to study the electronic and optical properties of different nitrogen-related point de
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18

Villalpando, Paéz Federico. "Effects of doping single and double walled carbon nanotubes with nitrogen and boron." Thesis, Massachusetts Institute of Technology, 2006. http://hdl.handle.net/1721.1/36215.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2006.<br>Includes bibliographical references (p. 135-143).<br>Controlling the diameter and chirality of carbon nanotubes to fine tune their electronic band gap will no longer be enough to satisfy the growing list of characteristics that future carbon nanotube applications are starting to require. Controlling their band gap, wall reactivity and mechanical properties is imperative to make them functional. The solution to these challenges is likely to lie in smart defect engineering. Defects of every
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19

Chindanon, Kritsa. "Nitrogen doping in low temperature halo-carbon homoepitaxial growth of 4H-silicon carbide." Master's thesis, Mississippi State : Mississippi State University, 2008. http://library.msstate.edu/etd/show.asp?etd=etd-07102008-045510.

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20

Hopkin, Amy L. "Methane conversion over supported nickel catalysts : influence of gold doping, support material and preparation method." Thesis, Keele University, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.288499.

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21

Esmaeili, Mostafa. "The Effects of Nitrogen doping on Chemical, Optical and Electronic properties of Carbon Dots." Thesis, Griffith University, 2022. http://hdl.handle.net/10072/414280.

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Photoluminescent carbon dots have received significant research interest in recent years owing to their extraordinary optical properties, biocompatibility, and versatile functionalities. Nitrogen-doping is a widely used strategy for enhancing the photoelectronic functionalities of carbon dots. However, there is a lack of systematic study on the composition and concentration-dependency emission behaviour of N-doped carbon dots in the literature. In this study, multicolour carbon dots (CDs) having different degree of nitrogen doping were synthesized by varying the molar ratio of citric acid to u
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22

Mawudoku, Daniel, George Affadu_Danful, Caitlin Millsaps, and Gregory Bishop. "Immobilization of Electrocatalytically Active Gold Nanoparticles on Nitrogen-Doped Carbon Fiber Electrodes." Digital Commons @ East Tennessee State University, 2019. https://dc.etsu.edu/asrf/2019/schedule/106.

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Immobilization of Electrocatalytically Active Gold Nanoparticles on Nitrogen-Doped Carbon Fiber Electrodes ABSTRACT Recently, immobilization of single metal nanoparticles on nanometer-sized electrodes has been demonstrated as a means to electrochemically probe the relationship between nanoparticle structure and function. Such studies of individual, isolated nanoparticles enable investigation of electrochemical behavior and electrocatalytic properties in the absence of complicating factors like interparticle distance and nanoparticle loading that are typically associated with collections of par
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23

Ye, Jianting. "Fabrication analysis and lithium doping in 4 Å carbon nanotubes in the channels of AlPO4̳-5 crystal /." View Abstract or Full-Text, 2002. http://library.ust.hk/cgi/db/thesis.pl?PHYS%202002%20YE.

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Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2002.<br>On t.p. "4̳" is subscript. Includes bibliographical references (leaves 84-86). Also available in electronic version. Access restricted to campus users.
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24

Kuo, Ming-Tsun. "Field emission and annealing studies of n-type doped hydrogenated amorphous carbon films." Thesis, University of Bristol, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.340300.

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25

Webb, Kimberly Faye. "Synthesis, blending, and doping of electrically conducting poly(3-undecylbithiophene) in supercritical carbon dioxide." Diss., Georgia Institute of Technology, 2000. http://hdl.handle.net/1853/10129.

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Lardeau-Falcy, Aurélien. "Dopage de couches de GaN sur substrat silicium par implantation ionique." Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAY024/document.

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Les dispositifs à base de GaN et ses alliages sont de plus en plus présents dans notre quotidien avec le développement exponentiel des diodes électroluminescentes (LED). Bien que la majorité des productions commerciales soient pour le moment effectuées sur substrat saphir, le silicium, disponible en de plus grands diamètres et pour un coût moindre, est de plus en plus pressenti comme le substrat d’avenir pour le développement des technologies GaN. L’utilisation de ce substrat devrait aussi permettre le développement du marché de l’électronique de puissance du GaN basée sur les transistors à ha
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27

Zhong, Mingyu. "Doped GaN grown by Phase Shift Epitaxy, fabrication and characterization of GaN:Eu LED." University of Cincinnati / OhioLINK, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1384427470.

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Ive, Tommy. "Growth and investigation of AlN/GaN and (Al,In)N/GaN based Bragg reflectors." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2006. http://dx.doi.org/10.18452/15395.

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Die Synthese von AlN/GaN- und (Al,In)N/GaN-Braggreflektoren wird untersucht. Die Strukturen wurden mittels plasmaunterstützter Molekularstrahlepitaxie auf 6H-SiC(0001)-Substraten abgeschieden. Ferner wurde der Einfluß der Si-Dotierung auf die Oberflächenmorphologie sowie die strukturellen und elektrischen Eigenschaften der AlN/GaN-Braggreflektoren untersucht. Es wurden rißfreie Braggreflektoren mit einer hohen Reflektivität (R>99%) und einem bei 450 nm zentrierten Stopband erhalten. Die Si-dotierten Strukturen weisen eine ohmsche I-V-Charakteristik im gesamten Meßbereich sowie einen spezifisch
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29

Ajay, Akhil. "Nanofils de GaN/AlGaN pour les composants quantiques." Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAY030/document.

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Ce travail se concentre sur l'ingénierie Intersubband (ISB) des nanofils où nous avons conçu des hétérostructures de GaN / (Al, Ga) N intégrées dans un nanofil GaN pour le rendre optiquement actif dans la région spectrale infrarouge (IR), en utilisant un faisceau moléculaire assisté par plasma épitaxie comme méthode de synthèse. Les transitions ISB se réfèrent aux transitions d'énergie entre les niveaux confinés quantiques dans la bande de conduction de la nanostructure.Un contrôle précis des niveaux élevés de dopage est crucial pour les dispositifs ISB. Par conséquent, nous explorons Ge comme
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30

Wornyo, Eric. "Nitrogen-Doped Carbon Fiber Ultramicroelectrodes as Electrochemical Sensors for Detection of Hydrogen Peroxide." Digital Commons @ East Tennessee State University, 2021. https://dc.etsu.edu/etd/3960.

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Carbon fiber ultramicroelectrodes (CF-UMEs) are commonly used as electrochemical probes and sensors due to their small size, fast response, and high signal-to-noise ratio. Surface modification strategies are often employed on CF-UMEs to improve their selectivity and sensitivity for desired applications. However, many modification methods are cumbersome and require expensive equipment. In this study, a simple approach known as soft nitriding is used to prepare nitrogen-doped CF-UMEs (N-CF-UMEs). Nitrogen groups introduced via soft nitriding act as electrocatalytic sites for the breakage of O-O
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31

Hoy, Daniel R. "Gallium Nitride and Aluminum Gallium Nitride Heterojunctions for Electronic Spin Injection and Magnetic Gadolinium Doping." The Ohio State University, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=osu1331855661.

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32

Kanakaraj, Sathya Narayan. "Processing Carbon Nanotube Fibers for Wearable Electrochemical Devices." University of Cincinnati / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1573224577754985.

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33

Macpherson, Ross Fraser. "Monte Carlo modelling of Gunn devices incorporating thermal heating effects : investigations of broad frequency devices, heating effects in GaN devices and doping nucleation." Thesis, University of Aberdeen, 2009. http://digitool.abdn.ac.uk:80/webclient/DeliveryManager?pid=203872.

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Monte Carlo modelling is a common technique in numerous fields, and is widely used in semiconductor device simulation. This thesis describes the application of Monte Carlo modelling to the simulation of Gunn diode devices, focusing on devices composed of Gallium Arsenide (GaAs) and Gallium Nitride (GaN). Gunn diodes are simple structures that take advantage of negative differential resistance to act as a source of high frequency radiation, from 10 GHz to over 100 GHz in GaAs devices. It has been theorised that GaN should exhibit negative differential resistance and a GaN Gunn diode could produ
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34

Sun, Yue-Jun. "Growth and characterization of M-plane GaN and (In, Ga)N/GaN multiple quantum wells." Doctoral thesis, [S.l. : s.n.], 2004. http://deposit.ddb.de/cgi-bin/dokserv?idn=97256375X.

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Mishra, Siddharth. "Plasma Enhanced Synthesis of Novel N Doped Vertically Aligned Carbon Nanofibers-3D Graphene hybrid structure." University of Cincinnati / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1552380299631335.

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36

Xhyliu, Fjorela. "Surface Functionalization and Optical Spectroscopy of Single-wall Carbon Nanotubes." Cleveland State University / OhioLINK, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=csu1599143727075125.

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Davies, Sean. "In-situ optical monitoring of growth processes during the carbon doping and nitridation of GaAs in CBE." Thesis, University of Liverpool, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.399266.

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HINOJOSA, PAOLA ALEXANDRA AYALA. "IMPLICATIONS OF THE C/N FEEDSTOCK ON CONTROLLING THE NITROGEN DOPING AND BONDING ENVIRONMENT IN CARBON NANOTUBES." PONTIFÍCIA UNIVERSIDADE CATÓLICA DO RIO DE JANEIRO, 2007. http://www.maxwell.vrac.puc-rio.br/Busca_etds.php?strSecao=resultado&nrSeq=10399@1.

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CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICO<br>Os tópicos mais importantes a ser tratados nesta tese de doutorado são os vários problemas envolvidos na síntese de nanotubos contendo nitrogênio. Isto é principalmente motivado pelas possíveis aplicações que podem ser dadas a este tipo de estruturas. A motivação central está relacionada ao fato da possibilidade de fazer dopagens tipo -p e -n em nanotubos de carbono, incorporando átomos como boro ou nitrogênio. Isto está muito longe de ser uma trivialidade devido a que devemos levar em conta que se os nanotubos de c
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39

Haugen, Neale O. "Spectroscopic Studies of Doping and Charge Transfer in Single Walled Carbon Nanotubes and Lead Sulfide Quantum Dots." University of Toledo / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1438768843.

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40

Ogbu, Chidiebere. "Peroxide Sensing Using Nitrogen-Doped and Platinum Nanoparticle-modified Screen-Printed Carbon Electrodes." Digital Commons @ East Tennessee State University, 2019. https://dc.etsu.edu/etd/3622.

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Nitrogen-doped carbon materials have garnered much interest due to their abilities to behave as electrocatalysts for reactions important in energy production (oxygen reduction) and biosensing (hydrogen peroxide reduction). Here, we demonstrate fabrication methods and determine electrocatalytic properties of nitrogen-doped screen-printed carbon (N-SPCE) electrodes. Nitrogen doping of graphite was achieved through a simple soft-nitriding technique which was then used in lab-formulated screen-printing inks to prepare N-SPCEs. N-SPCEs displayed good electrocatalytic activity, reproducibility and l
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41

Vorobiov, Mykhailo. "PHOTOLUMINESCENCE FROM GAN CO-DOPED WITH C AND SI." VCU Scholars Compass, 2018. https://scholarscompass.vcu.edu/etd/5496.

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This thesis devoted to the experimental studies of yellow and blue luminescence (YL and BL relatively) bands in Gallium Nitride samples doped with C and Si. The band BLC was at first observed in the steady-state photoluminescence spectrum under high excitation intensities and discerned from BL1 and BL2 bands appearing in the same region of the spectrum. Using the time-resolved photoluminescence spectrum, we were able to determine the shape of the BLC and its position at 2.87 eV. Internal quantum efficiency of the YL band was estimated to be 90\%. The hole capture coefficient of the BLC related
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42

Mokhtari, Hossein. "Transmission electron microscopy of defects and internal fields in GaN structures." Thesis, University of Bristol, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.368206.

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43

Remesh, Nayana. "Investigation of Buffer Design and Carbon doping in AlGaN/GaN HEMTs for High Breakdown Voltages." Thesis, 2021. https://etd.iisc.ac.in/handle/2005/5463.

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III-nitride HEMTs are strong contenders for next-generation power electronic applications. The superior material and electrical properties render GaN-based transistors suitable for high-power switching. The material characteristics such as high breakdown voltage, high electron mobility, and high operating temperature make GaN score over Si. Further, low ON resistance and high switching speed responsible for the subsequent reduction in both switching and ON/OFF state losses render GaN-based HEMT a foreboding device for power electronic applications. In this Doctoral Dissertation, we investi
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Chou, Chia Yi, and 周佳逸. "Influence of Buffer Carbon Doping and Buffer Thickness on Low Frequency Noise Behavior of AlGaN/GaN HEMTs." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/96035991629482509484.

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Hsu, Miao-Chih, and 徐妙枝. "Isoelectronic Indium Doping Effects On P-type GaN Films." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/22909728328174972455.

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碩士<br>國立交通大學<br>電子物理系<br>90<br>We have investigated the isoelecetronic indium doping effects of Indium on p-type GaN films. Two sets of samples were prepared：one is pure Mg-doped GaN film, the other is Mg-In codoped GaN film. Whether Indium is doped or not, the photoluminescence spectra of as-grown p-type GaN films all show one broad emission peak around 2.78eV, which indicating Mg-rich in all of our p-type GaN samples. Besides, it is interesting to note that the hole concentration of Mg-In codoped GaN is higher than that of Mg-doped one based on room-temperature Hall measurement data. The opt
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Fu-Min, Wang, and 王富民. "Investigation of AlGaN/GaN Doping-Channel High Electron Mobility Transistors." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/75941597127919252758.

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碩士<br>國立高雄師範大學<br>電子工程學系<br>103<br>Investigation of AlGaN/GaN Doping-Channel High Electron Mobility Transistors Fu-Min Wang* Jung-Hui Tsai** Department of Electronics, National Kaohsiung Normal University, Kaohsiung, Taiwan, R.O.C Abstract In this dissertation, we will fabricate and investigate the impact of doping channel on the AlGaN/GaN doping-channel high electron mobility transistors, and the influence of doped thickness on AlGaN/GaN doping-channel high electron mobility transistors will be included. The structures were designed as follows: (1) AlGaN/GaN doping-channel high e
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Maubane, Manoko Stephina. "Synthesis, doping and functionalization of carbon nanotubes." Thesis, 2011. http://hdl.handle.net/10539/9148.

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This study reports the synthesis of carbon nanotubes (CNTs) incorporated into polymeric materials for potential use in photovoltaic solar cells. Both undoped (CNTs) and nitrogendoped (N-CNTs) materials were made using the chemical vapor deposition (CVD), catalytic CVD and floating catalyst CVD methods. The procedures produced CNTs with an average yield of 1151 % using a 10 % Fe/Co catalyst supported on CaCO3. This is about three times that produced using 5 % Fe/Co catalyst (average 409 %). Morphology studies showed that the synthesized materials had an average diameter of 30 nm. CNTs wer
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Kuo, Hsin-Fu, and 郭信甫. "Functionalized Carbon Nanotubes:Surface Decoration and Doping Effect." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/63859799801652308387.

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博士<br>國立清華大學<br>材料科學工程學系<br>95<br>Abstract The works presented in this thesis discuss the effects of non-covalent interaction with carbon nanotubes and molecules as well as Boron-dopants modify electronic structure of carbon nanotubes. Surface decoration has been proved to be important in changing the physico-chemical properties of nanotubes. For example, surface tension, gas sensing and purification via surface reaction are discussed in this study. Doping is well known effective in changing electrical properties of Si-based devices, and it also works in carbon nanotubes. In this study,
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Yang, Yi Chang, and 楊益菖. "Effect on Photoelectric Characteristics of Blue Light-Emitting Diodes by Doping in InGaN of GaN/InGaN/GaN." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/68017258889013245799.

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Shu, Chen-Ke, and 徐宸科. "The Characterizations and Studies of Doping and Ion-Implantation Effects in GaN Films." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/21905049296363340543.

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博士<br>國立交通大學<br>電子物理系<br>89<br>The structural and optical properties of impurity doped and P-implanted GaN films were studied by using Raman scattering, photoluminescence, photoluminescence excitation, time-resolved photoluminescence, scanning electronic microscopy, atomic force microscopy, X-ray diffraction, and Hall measurements. The electron concentration reached as high as 1.3x10^19 cm^-3 without cracks or nanopits by using the Si dopant. The solid-vapor ratio was also high about 0.055. The band gap shrinkage of GaN:Si was observed that is proportional to n^{1/3}. In
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