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Gotowe bibliografie tematyczne / Carbon Doping in GaN

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Gotowa bibliografia na temat „Carbon Doping in GaN”

Autor: Grafiati

Data publikacji: 6 września 2023

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Rozprawy doktorskie na temat "Carbon Doping in GaN"

1

Ciarkowski, Timothy A. "Low Impurity Content GaN Prepared via OMVPE for Use in Power Electronic Devices: Connection Between Growth Rate, Ammonia Flow, and Impurity Incorporation." Diss., Virginia Tech, 2019. http://hdl.handle.net/10919/94551.

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GaN has the potential to revolutionize the high power electronics industry, enabling high voltage applications and better power conversion efficiency due to its intrinsic material properties and newly available high purity bulk substrates. However, unintentional impurity incorporation needs to be reduced. This reduction can be accomplished by reducing the source of contamination and exploration of extreme growth conditions which reduce the incorporation of these contaminants. Newly available bulk substrates with low threading dislocations allow for better study of material properties, as oppos

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Ashourirad, Babak. "HETEROATOM-DOPED NANOPOROUS CARBONS: SYNTHESIS, CHARACTERIZATION AND APPLICATION TO GAS STORAGE AND SEPARATION." VCU Scholars Compass, 2015. http://scholarscompass.vcu.edu/etd/4062.

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Activated carbons as emerging classes of porous materials have gained tremendous attention because of their versatile applications such as gas storage/separations sorbents, oxygen reduction reaction (ORR) catalysts and supercapacitor electrodes. This diversity originates from fascinating features such as low-cost, lightweight, thermal, chemical and physical stability as well as adjustable textural properties. More interestingly, sole heteroatom or combinations of various elements can be doped into their framework to modify the surface chemistry. Among all dopants, nitrogen as the most frequent

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3

Kleinsorge, Britta Yvonne. "Doping of amorphous carbon." Thesis, University of Cambridge, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.621744.

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RIBEIRO, MARIO LUIS PIRES GONCALVES. "CARBON DOPING IN INAIAS EPITAXIAL LAYERS." PONTIFÍCIA UNIVERSIDADE CATÓLICA DO RIO DE JANEIRO, 2002. http://www.maxwell.vrac.puc-rio.br/Busca_etds.php?strSecao=resultado&nrSeq=2651@1.

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COORDENAÇÃO DE APERFEIÇOAMENTO DO PESSOAL DE ENSINO SUPERIOR<br>ERICSSON DO BRASIL<br>É reconhecido o potencial de usar carbono como um dopante tipo p em InAlAs devido a obtenção de elevados níveis de dopagem [1,2]. Entretanto, níveis elevados de dopagem só são alcançados em baixas temperaturas de crescimento (Tg inferiores a 600°C). Nessas temperaturas, as camadas crescidas apresentam qualidade ótica inferior quando comparadas com camadas crescidas em temperaturas mais altas, o que é prejudicial para dispositivos de optoeletrônica. Neste trabalho, é apresentada uma investigação sistemát

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Khromov, Sergey. "Doping effects on the structural and optical properties of GaN." Doctoral thesis, Linköpings universitet, Tunnfilmsfysik, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-100760.

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Today there is a strong drive towards higher efficiency light emitters and devices for power electronics based on GaN and its ternary compounds. Device performance can be improved in several ways on the material level. Development of bulk GaN to substitute sapphire and SiC as substrate materials can allow lower defect density epitaxial GaN layers to be grown. Using nonpolar homoepitaxial layers alleviates the problem of polarization fields present in polar GaN epilayers. This thesis advances the field by attacking outstanding problems related to doping and its influence on structural and optic

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彭澤厚 and Chak-hau Pang. "A study of Mg doping in GaN during molecular beam epitaxy." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2001. http://hub.hku.hk/bib/B31226619.

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Pang, Chak-hau. "A study of Mg doping in GaN during molecular beam epitaxy /." Hong Kong : University of Hong Kong, 2001. http://sunzi.lib.hku.hk/hkuto/record.jsp?B25059075.

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Alluqmani, Saleh Marzoq B. "Growth and doping of carbon nanotubes and graphene." Thesis, Durham University, 2015. http://etheses.dur.ac.uk/10949/.

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Single walled carbon nanotubes (SWCNTs) have been doped with nitrogen (N) by two ion-mediated approaches: directly through irradiation with N+ ions and by a novel indirect technique, creating defects through Ar+ ion irradiation which then react with nitrogen upon annealing in a N2 atmosphere. X-ray photoelectron spectroscopy (XPS) was then employed to determine the chemical environment of the nitrogen within the resulting SWCNT material. Depending upon the exact preparation conditions, nitrogen in graphitic (substitutional) pyridinic and pyrrolic configurations could be identified. Nitrogen do

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9

Francis, Smita. "Optimisation of doping profiles for mm-wave GaAs and GaN gunn diodes." Thesis, Cape Peninsula University of Technology, 2017. http://hdl.handle.net/20.500.11838/2568.

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Thesis (DTech (Electrical Engineering))--Cape Peninsula University of Technology, 2017.<br>Gunn diodes play a prominent role in the development of low-cost and reliable solid-state oscillators for diverse applications, such as in the military, security, automotive and consumer electronics industries. The primary focus of the research presented here is the optimisation of GaAs and GaN Gunn diodes for mm-wave operations, through rigorous Monte Carlo particle simulations. A novel, empirical technique to determine the upper operational frequency limit of devices based on the transferred elec

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10

Khromov, Sergey. "The Effect of Mg Doping on Optical and Structural Properties of GaN." Licentiate thesis, Linköpings universitet, Tunnfilmsfysik, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-75428.

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Mg is the most commonly used p-type dopant for GaN, however the impact of Mg incorporation on structural, morphological and optical properties of GaN is still not fully understood. Another research challenge is to understand and improve the properties of nonpolar GaN as it allows the fabrication of more efficient optoelectronic devices due to the absence of polarization fields. Thus, the aim of this thesis was to explore the effect of Mg doping on polar c-plane GaN in Paper 1 and nonpolar m-plane GaN in Paper 2. The samples were grown by metal-organic vapor phase epitaxy with varying Mg conten

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