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Artykuły w czasopismach na temat "Capacitance électrique"
Sdayria, Aymen, Jalila Sghaier, Marko Vauhkonen i Afif El Cafsi. "Evaluation par la méthode inverse des cinétiques de séchage d’un lit fixe de particules". Journal of Renewable Energies 18, nr 1 (18.10.2023). http://dx.doi.org/10.54966/jreen.v18i1.494.
Pełny tekst źródłaGautier, Axel, i Julien Jacqmin. "Numéro 145 - mars 2019". Regards économiques, 14.03.2019. http://dx.doi.org/10.14428/regardseco/2019.03.14.01.
Pełny tekst źródłaGautier, Axel, i Julien Jacqmin. "Numéro 145 - mars 2019". Regards économiques, 14.03.2019. http://dx.doi.org/10.14428/regardseco2019.03.14.01.
Pełny tekst źródłaRozprawy doktorskie na temat "Capacitance électrique"
Bonnin, Xavier. "Alimentation électrique des dispositifs de décharge à barrière diélectrique". Phd thesis, Toulouse, INPT, 2014. http://oatao.univ-toulouse.fr/13645/1/bonnin.pdf.
Pełny tekst źródłaPirro, Luca. "Caractérisation et modélisation électrique de substrats SOI avancés". Thesis, Université Grenoble Alpes (ComUE), 2015. http://www.theses.fr/2015GREAT096/document.
Pełny tekst źródłaSilicon-on-insulator (SOI) substrates represent the best solution to achieve high performance devices. Electrical characterization methods are required to monitor the material quality before full transistor fabrication. The classical configuration used for SOI measurements is the pseudo-MOSFET. In this thesis, we focused on the enrichment of techniques in Ψ-MOSFET for the characterization of bare SOI and III-V wafers. The experimental setup for static ID-VG was improved using a vacuum contact for the back gate, increasing the measurement stability. Furthermore, this contact proved to be critical for achieving correct capacitance values with split-CV and quasi-static techniques (QSCV). We addressed the possibility to extract Dit values from split-CV and we demonstrated by modeling that it is impossible in typical sized SOI samples because of the time constant associated to the channel formation. The limitation was solved performing QSCV measurements. Dit signature was experimentally evidenced and physically described. Several SOI structures (thick and ultra-thin silicon films and BOX) were characterized. In case of passivated samples, the QSCV is mostly sensitive to the silicon film-BOX interface. In non-passivated wafers, a large defect related peak appears at constant energy value, independently of the film thickness; it is associated to the native oxide present on the silicon surface. For low-frequency noise measurements, a physical model proved that the signal arises from localized regions surrounding the source and drain contacts
Maslova, Olga. "Capacitance spectroscopy in hydrogenated amorphous silicon Schottky diodes and high efficiency silicon heterojunction solar cells". Phd thesis, Université Paris Sud - Paris XI, 2013. http://tel.archives-ouvertes.fr/tel-00922994.
Pełny tekst źródłaTirano, Sauveur. "Intégration et caractérisation électrique d'éléments de mémorisation à commutation de résistance de type back-end à base d'oxydes métalliques". Thesis, Aix-Marseille, 2013. http://www.theses.fr/2013AIXM4713/document.
Pełny tekst źródłaThis work is focused on the electrical characterization and physical modeling of emerging OxRRAM memories (Oxide Resistive Random Access Memory) integrating nickel or hafnium oxide. After reaching maturity, this memory concept is likely to replace the Flash technology which is still a standard in the CMOS industry. The main advantages of resistive memories technology is their good compatibility with CMOS processes, a small number of manufacturing steps, a high integration density and their attractive performances in terms of memory operation. The first objective of this thesis is to provide enough informations allowing to orientate the elaboration process of the active nickel oxide layer (thermal oxidation, reactive sputtering) then to compare the performances of the fabricated cells with devices featuring a hafnium oxide layer. The second objective is to understand the physical mechanisms responsible of the device resistance change. A physical model is proposed allowing to apprehend SET and RESET phenomenon in memory devices, subject which is still widely debated in the scientific community. The third objective of this thesis is to evaluate electrical parasitic phenomenon observed in 1R-type memory elements (resistive element without addressing device), in particular the parasitic capacitance appearing during cell programming (writing operation)
Omar, Farah Samatar. "Modélisation multiphysique des roulements à billes par la Méthode des Éléments Discrets en régime Élasto-Hydro-Dynamique". Electronic Thesis or Diss., Amiens, 2022. http://www.theses.fr/2022AMIE0059.
Pełny tekst źródłaDuring this PhD thesis, we have focused on a digital tool for modeling ball bearing operating under elstohydrodynamic (EHD) regime. Based on an original description involving the discrete element method (DEM), the developed digital tool integrates all the components of ball bearings and enables realistic behavior under mechanical loading and kinematic conditions. Two models of ball bearings were considered and simulated with the digital tool, namely SKF 6208 radial contact ball bearing and SKF 7208 angular contact ball bearing. In order to check the standard indicators recommended by most ball bearing manufactures, a stiffness model for elliptical hertzian contact and an improved EHD formulation for lubricated contact are implemented in the discrete model of ball bearings. In addition, we have introduced into the discrete modeling an electrical capacitance model coupling rheological and dielectric properties of the lubricant with the Hertz's pressure at the contact between the ball and the raceways. The numerical predictions of lubricant film capacitance provided by numerical simulations are in good accordance, both qualitatively and quantitatively, with the experimental data available in the literature. The combination of the discrete modeling and the electrical approach enables efficient solutions to be provided in terms of lubrication regime in relation to the lubricant properties to optimize the bearing lifetime
Leon, Cyril. "Adaptation des techniques de caractérisation basées sur des mesures de capacité et d’admittance aux cellules solaires multijonctions : expériences et modélisations". Thesis, université Paris-Saclay, 2020. http://www.theses.fr/2020UPAST038.
Pełny tekst źródłaThe theoretical Shockley-Queisser radiative efficiency limit for single solar cells is around 30% and even silicon solar cells, which dominate the PV market, are very close to their performance limit with a record efficiency around 27%. The multi-junction (MJ) architecture is a strategy to reach or go over the 30% efficiency by combining semiconductor absorbers with appropriate bandgaps. However, the characterization of MJ solar cells can be much more complex than single junction cells. Indeed, for the two-terminal MJ architecture, the optical and electrical coupling between the subcells makes it challenging to characterize each subcell independently. In this thesis, we develop characterization techniques based on capacitance and admittance measurements and applied to MJ solar cells: capacitance-voltage (C(V)), admittance spectroscopy and deep-level transient spectroscopy (DLTS) techniques. These techniques are commonly used for single solar cells to determine doping densities (C(V)) or to study electrically active defects (admittance spectroscopy and DLTS), but only a few studies have been published about their use to characterize MJ cells at the subcell level. We show here it is possible to separate each subcell’s contribution to the cell capacitance by choosing illuminations such that one subcell is in the dark whereas the others absorb the light. Based on theoretical and numerical developments as well as experimental results performed on III-V/Si tandem cells, we present a detailed analysis of the techniques: subcell properties that can be extracted, influence of several experimental parameters (DC bias, frequency, temperature, light power…), limits and difficulties of the techniques. This work can be extended to other types of tandem cells like perovskite/Si or to MJ with more than two subcells
Alcami, Ayerbe José. "Interactions synaptiques entre les interneurones de la couche moléculaire du cervelet". Thesis, Paris 5, 2013. http://www.theses.fr/2013PA05T021.
Pełny tekst źródłaMolecular layer interneurons of the cerebellum (MLIs: basket cells and stellate cells) are connected by frequent and strong electrical synapses in young rats and mice around the end of the second postnatal week. Capacitive currents of MLIs show a slow component that reflects the charge of electrically-coupled MLIs. The analysis of capacitive currents makes it possible to quantify the number of directly connected cells and the equivalent number of coupled cells (Alcami and Marty, submitted). They were used to show a difference in coupling between basket and stellate cells and propose a model of the basket cell coupled network. Electrical coupling strength can be modulated by intrinsic currents, like the h current in the hyperpolarizing range. Electrical synapses modify the propagation and the patterns of activity in the MLI network, when the network is excited.The study of connectivity of MLIs by chemical GABAergic synapses led us to reevaluate the sources of error of cell-attached recordings (Alcami et al., 2012). Cell-attached measurements can modify cellular electrical activity of MLIs, by introducing a conductif coupling between the recording pipette and the cell interior, resulting from a combination of passive and active coupling
Awan, Ahmed-Bilal. "Contribution à l’étude de la stabilité des systèmes électriques distributés autour d’un bus commun d'alimentation". Thesis, Vandoeuvre-les-Nancy, INPL, 2011. http://www.theses.fr/2011INPL099N/document.
Pełny tekst źródłaStability is the first and very important factor in all modes of operation for a Distributed Power System (DPS). In DPS, loads are connected to the DC-bus through an input LC filter. Most of the loads in DPS of aircraft present a constant power load characteristic within a domain of operation in which they are tightly controlled. So they can be modeled as negative resistance. Change of the load in one subsystem may lead a stable system into instability. A practical solution to decrease the risk of instability presented in this thesis which consists in modifying the control of the converters or inverter-motor drive system connected to the DC-bus. This solution permits to stabilize the system even with a smaller size of capacitor. In the first part of the thesis, a linear method is presented which allows investigating local stability of an inverter-motor-drive system connected to the grid through an LC filter and a rectifier. An oscillation compensation technique is used to improve the stability margin of the system and the size of the dc-link capacitance without modifying structure of the torque or current loops. This technique consists in superposing a stabilizing power on the absorbed power by the drive. Although linear models can be successfully employed to locally describe the behavior of a physical system, they often fail to provide a satisfactory large signal characterization. In the second part, two methods for the large signal stabilization of the electrical system are presented. In the last part, a new method, based on dynamic specifications, is proposed to study the stability of a cascaded electric system
Li, Qiran. "Développement de matériaux d’électrodes à base d’oxydes complexes pour des dispositifs de fortes capacitances". Caen, 2013. http://www.theses.fr/2013CAEN2019.
Pełny tekst źródłaThe aim of the project of the development of electrode materials for devices of high capacitance is to enhance the geometric capacitance of a capacitor by the careful choice of electrode materials and thus to minimize the size of the passive devices in microelectronics. Nowadays, most of the efforts have been made on the development of the dielectric material and the structure of the capacitors to improve the performance of the latter. However, an alternative method for capacitance enhancement is to choose a specific electrode material, such as a 2D electron gas or a strongly correlated system. In this thesis, firstly the synthesis and characterization of an ultrathin film of SrVO3 buried between two LaVO3 films are described. The buried SrVO3 films show good conducting properties with strong electron-electron correlations and, for a thickness of only some unit cells, the characteristics of reduced dimensions. The study of capacitors based on LaVO3/SrVO3 is also presented. The second part is firstly devoted to the study of LaNiO3 thin films, a strongly correlated system, optimizing their conduction performance. Capacitors based on LaAlO3/LaNiO3 presented both enhanced (2 to 2. 5 times) and reduced capacitance values compared to the geometric ones, depending on the types of applied electrodes. These effects have not been identified yet in other similar systems, and demonstrate the importance of the electrode properties on the capacitance
Barbier, Tristan. "Synthèse et caractérisation de nouveaux matériaux à permittivité colossale". Thesis, Tours, 2012. http://www.theses.fr/2012TOUR4001/document.
Pełny tekst źródłaThe problem of ceramic capacitors with very high performance is recurrent in many areas ofElectrical Energy. It takes all its acuteness in « nomadic » microelectronics (cell phone, tablet, mp3player...) where the circuits must be increasingly miniaturized. These capacitors can take up to50 % of the space on the PCB, reducing their size becomes an imperative. In this context newmaterials with colossal permittivity were discovered, such CaCu3Ti4O12 (CCTO). The mechanismIBLC (Internal Barrier Layer Capacitance), describing semiconductor grains and insulating grainboundaries can now explain these high permittivities. However, the origin of the semiconductivitygrains and the insulating character of grain boundaries give even controversial. The aim is thus twofold,on one hand to synthesize a material possessing similar dielectric properties to CCTO, and onthe other hand to understand the various mechanisms responsible for these exceptional permittivity.The first part of this thesis presents various characteristics of capacitors uses, it also aims to listthe mechanisms that have been proposed by the scientific community to try to explain the highpermittivity of CCTO. The second part presents firstly the characterization techniques whichwere used to analyze all the compounds described in this manuscript, with particular emphasison impedance spectroscopy. It presents on the other hand synthesis techniques that have beentried to synthesize a new material with colossal permittivity : Ba4YMn3O11,5±δ. Structural andmicro-structural characterizations of Ba4YMn3O11,5±δ will be discussed in the third part to themanuscript. Finally, the various optimizations that were performed on Ba4YMn3O11,5±δ, to try toimprove the dielectric properties, will be discussed. We detail in this last part substitutions havingbeen made on the site of barium and manganese and the creation of a phase having a differentcation in the present yttrium site and having dielectric properties very interesting also
Książki na temat "Capacitance électrique"
Wang, Fei, Zheyu Zhang i Edward A. Jones. Characterization of Wide Bandgap Power Semiconductor Devices. Institution of Engineering & Technology, 2018.
Znajdź pełny tekst źródłaCharacterization of Wide Bandgap Power Semiconductor Devices. Institution of Engineering & Technology, 2018.
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