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Artykuły w czasopismach na temat „BULK SEMICONDUCTING”

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Data publikacji: 11 września 2023

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1

Look, D. C., P. W. Yu, W. M. Theis, W. Ford, G. Mathur, J. R. Sizelove, D. H. Lee i S. S. Li. "Semiconducting/semi‐insulating reversibility in bulk GaAs". Applied Physics Letters 49, nr 17 (27.10.1986): 1083–85. http://dx.doi.org/10.1063/1.97429.

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2

Solozhenko, Vladimir L., Natalia A. Dubrovinskaia i Leonid S. Dubrovinsky. "Synthesis of bulk superhard semiconducting B–C material". Applied Physics Letters 85, nr 9 (30.08.2004): 1508–10. http://dx.doi.org/10.1063/1.1786363.

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3

Ye, Yumin, Dominick J. Bindl, Robert M. Jacobberger, Meng-Yin Wu, Susmit Singha Roy i Michael S. Arnold. "Semiconducting Carbon Nanotube Aerogel Bulk Heterojunction Solar Cells". Small 10, nr 16 (9.04.2014): 3299–306. http://dx.doi.org/10.1002/smll.201400696.

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4

Mahmood, A., i L. Enrique Sansores. "Band structure and bulk modulus calculations of germanium carbide". Journal of Materials Research 20, nr 5 (maj 2005): 1101–6. http://dx.doi.org/10.1557/jmr.2005.0172.

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Band-structure calculations of germanium carbide (GeC) show that it is a new indirect wide band gap semiconducting material, which crystallizes in both cubic and hexagonal phases. Through the density functional and total-energy technique in the generalized gradient approximation, the two polytypes 3C and 2H of GeC were studied. According to our calculations, it is a hard material with a percentage of covalency of about 80–90%. Important energy gaps were determined. The bulk modulus, density of states, and charge density were calculated. For the bulk modulus calculations, Murnaghan’s equation of state was used under elastic deformation to measure hardness. Our calculations showed that this semiconducting material crystallizes in zincblend (Eg = 1.76 eV) and wurtzite (Eg = 2.5 eV) structures.
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5

Zuo, H., R. D. Griffin, G. M. Janowski i R. N. Andrews. "Characterization of Bulk-Grown Hg1-xcdxTe". Proceedings, annual meeting, Electron Microscopy Society of America 49 (sierpień 1991): 902–3. http://dx.doi.org/10.1017/s0424820100088828.

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The II-VI semiconducting compounds are of particular interest due to the ability to compositionally tune them to detect infrared radiation in the 0.5 to 30 μm range. With the demand for advanced imaging systems, there is an immediate need for bulk II-VI materials with improved compositional homogeneity and structural perfection. The performance of optical semiconductors is very sensitive to the presence of defects such as dislocations, precipitates, and boundaries.
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6

Casellas, Nicolás M., Indre Urbanaviciute, Tim D. Cornelissen, José Augusto Berrocal, Tomás Torres, Martijn Kemerink i Miguel García-Iglesias. "Resistive switching in an organic supramolecular semiconducting ferroelectric". Chemical Communications 55, nr 60 (2019): 8828–31. http://dx.doi.org/10.1039/c9cc02466b.

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7

Hua, Chi-Chung, Chih-Yuan Kuo i Show-An Chen. "Controlling bulk aggregation state in semiconducting conjugated polymer solution". Applied Physics Letters 93, nr 12 (22.09.2008): 123303. http://dx.doi.org/10.1063/1.2988193.

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8

He, Yuping, Ivana Savić, Davide Donadio i Giulia Galli. "Lattice thermal conductivity of semiconducting bulk materials: atomistic simulations". Physical Chemistry Chemical Physics 14, nr 47 (2012): 16209. http://dx.doi.org/10.1039/c2cp42394d.

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9

Hua, Chi Chung, Chih Jung Lin, Yu Ho Wen i Show An Chen. "Stabilization of bulk aggregation state in semiconducting polymer solutions". Journal of Polymer Research 18, nr 4 (28.07.2010): 793–800. http://dx.doi.org/10.1007/s10965-010-9476-3.

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10

Jiang, Li-Feng, Lei Xu i Jun Zhang. "Electronic properties of armchair graphene nanoribbons under uniaxial strain and electric field". International Journal of Modern Physics B 32, nr 24 (13.09.2018): 1850263. http://dx.doi.org/10.1142/s0217979218502636.

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The armchair graphene nanoribbons (AGNRs) can be either semiconducting or metallic, depending on their widths. We investigate the electronic properties of AGNRs under uniaxial strain and electric field. We find that the bulk gap decreases gradually with the increase of the electric field for semiconducting case, but it cannot vanish completely in an appropriate range, which is similar to that of a single uniaxial strain. However, a suitable combination of electric field and uniaxial strain can lead to that the energy gap completely vanishes and reopens. For the metallic case, the bulk gap can display the same opening and closing behavior under an electric field and uniaxial strain. Finally, an interesting quantum phenomenon is obtained by applying a perpendicular magnetic field.
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11

Çakır, Deniz, Hasan Sahin i François M. Peeters. "Doping of rhenium disulfide monolayers: a systematic first principles study". Phys. Chem. Chem. Phys. 16, nr 31 (2014): 16771–79. http://dx.doi.org/10.1039/c4cp02007c.

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12

Anni, Marco. "Special Issue “II-VI Semiconductor Nanocrystals and Hybrid Polymer–Nanocrystal Systems”". Nanomaterials 11, nr 2 (12.02.2021): 467. http://dx.doi.org/10.3390/nano11020467.

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The continuous need to improve the performance of photonic, electronic and optoelectronic devices has stimulated research toward the development of innovative semiconducting materials which display better properties with respect to standard bulk semiconductors [...]
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13

Dozov, Ivan, Claire Goldmann, Patrick Davidson i Benjamin Abécassis. "Probing permanent dipoles in CdSe nanoplatelets with transient electric birefringence". Nanoscale 12, nr 20 (2020): 11040–54. http://dx.doi.org/10.1039/d0nr00884b.

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Transient electric birefringence experiments with colloidal suspensions of zinc-blende CdSe semiconducting nanoplatelets prove that these particles bear a large ground-state electric dipole despite the cubic structure of bulk zinc-blende CdSe.
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14

Ordon, K., A. Kassiba i M. Makowska-Janusik. "Electronic, optical and vibrational features of BiVO4 nanostructures investigated by first-principles calculations". RSC Advances 6, nr 112 (2016): 110695–705. http://dx.doi.org/10.1039/c6ra20605k.

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Numerical models based on DFT and semi-empirical quantum chemical calculations were developed for bulk and nano-sized BiVO4 semiconducting oxide. Importance of surface reconstruction for electronic and vibrational properties was shown.
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15

John, Rita. "Band Gap Engineering in Bulk and Nano Semiconductors". MRS Proceedings 1454 (2012): 233–38. http://dx.doi.org/10.1557/opl.2012.1445.

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ABSTRACTThe changes are brought in the elemental semiconductors Si and Ge by replacing them with II-VI and III-V binary analogs or their ternary analogs I-III-VI2 chalcopyrides and II-IV-V2 pnictides respectively. Such compounds exhibit transitions from their parent compound in terms of nature of band gaps (Eg) as indirect to direct in addition to the changes in the values of the Eg. These changes have direct consequence in their optical properties with degenerate states being lifted leading to crystal field splitting and so on. The Eg in ternary bulk semiconducting materials is engineered as a function of certain structural parameters such as anion position parameter (u), tetragonal compression parameter (η) through effective alloying. The contributions to Eg due to these effects are studied as band gap anomalies. The present paper discusses the results of the band gap engineering in some of the bulk ABC2(A= Cd; B=Si,Ge,Sn; C= P,As) semiconductors using theoretical methods. The influence of each of A, B and C atom is also discussed. The dependence of morphology of nano semiconducting particles and the band gap on the chemical environment, temperature is reported by us. The confinement energy of a compound which is the difference in energy between the bulk and nano forms is investigated.
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16

Djellal, Marouane, Aymen Mebarki, Abdelfateh Benmakhlouf i Salah Daoud. "Mechanical and thermal properties versus effective cubic lattice constant in Cu2-II-IV-VI4 quaternary compounds". International Journal of Advanced Chemistry 10, nr 1 (8.06.2022): 32–35. http://dx.doi.org/10.14419/ijac.v10i1.32053.

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The present work aims to study the dependence of the bulk modulus B and the Debye temperature θD with the effective cubic lattice constant aeff of some Cu2-II-IV-VI4 compounds. We are also studied the correlation between the bulk modulus B, the Debye temperature θD, the microhardness H and the melting point Tm.The fits of the data of the bulk modulus B and the Debye temperature θD versus the effective cubic lattice constant aeff show that B of Cu2-II-IV-VI4 semiconducting materials decreases almost linearly with increase of the effective cubic lattice constant aeff, while that of Debye Temperature θD decreases exponentially with a rising of the effective cubic lattice constant aeff. The coefficients of the correlation were found at around -0.78 for the bulk modulus B, and at around -0.94 for the Debye temperature, respectively.For the bulk modulus B, the best fit was obtained using the following expression: B = - 596.52 aeff + 393.4, where B is expressed in GPa, and aeff in nm, while that of θD is: θD = 165.46 + 3.8 exp (-57.2 aeff), respectively. The average error on the estimation of B was found at around 10%, while that on the estimation of θD is only around 4.5%, respectively. Our expressions perhaps used with high accurate to predict the bulk modulus B and the Debye temperature θD of other quaternary Cu2-II-IV-VI4 semiconducting materials.
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17

Cho, Han-Hee, Liang Yao, Jun-Ho Yum, Yongpeng Liu, Florent Boudoire, Rebekah A. Wells, Néstor Guijarro, Arvindh Sekar i Kevin Sivula. "A semiconducting polymer bulk heterojunction photoanode for solar water oxidation". Nature Catalysis 4, nr 5 (maj 2021): 431–38. http://dx.doi.org/10.1038/s41929-021-00617-x.

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18

Yu, P. W., D. C. Look i W. Ford. "Photoluminescence in electrically reversible (semiconducting to semi‐insulating) bulk GaAs". Journal of Applied Physics 62, nr 7 (październik 1987): 2960–64. http://dx.doi.org/10.1063/1.339381.

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19

Wang, Yang, Michael F. G. Klein, Junya Hiyoshi, Susumu Kawauchi, Wallace W. H. Wong i Tsuyoshi Michinobu. "Bulk-Heterojunction Organic Solar Cells Based on Benzobisthiadiazole Semiconducting Polymers". Journal of Photopolymer Science and Technology 28, nr 3 (2015): 385–91. http://dx.doi.org/10.2494/photopolymer.28.385.

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20

Xie, Z., M. S. A. Abdou, X. Lu, M. J. Deen i S. Holdcroft. "Electrical characteristics and photolytic tuning of poly(3-hexylthiophene) thin film metal–insulator–semiconductor field-effect transistors (MISFETs)". Canadian Journal of Physics 70, nr 10-11 (1.10.1992): 1171–77. http://dx.doi.org/10.1139/p92-189.

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In this paper, we present results on the electrical characteristics of both thick and thin film polymer metal–insulator–semiconductor field-effect transistors (MISFETs) based on poly(3-hexylthiophene) semiconducting substrate. These MISFETs were fabricated in eight steps using conventional semiconductor processing technology. The MISFETs had excellent current–voltage characteristics and showed little degradation with time. Electrical parameters of threshold voltage, mobility, and transconductance were − 1 V, 10−4–10−5 cm2 V−1 s−1, and 10−9 S, respectively. These values are typical of π-conjugated polymer-based MISFETs. Electrical transport in MISFETs were by both bulk (or resistive) and FET-like mechanisms in the thick film transistors. The resistive current component and the electrical characteristics were found to be tunable by photolytic degradation of the semiconducting polymer. In this process, the semiconducting π-conjugated regions were spatially converted to insulating regions by novel photo-oxidative chemistry. We were also successful in modelling the MISFETs as an intrinsic FET with parasitic source and drain resistances in series with it and a varistor (for the bulk current component) in parallel with the intrinsic FET. Using this circuit model, we obtained very good agreements between SPICE simulations and the experimental results.
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21

Tsogbadrakh, Namsrai, Narmandakh Jargalan, Balt Batgerel i Khinayat Tsookhuu. "Electronic Structure, Magnetism and Magnetocrystalline Anisotropy of Antiferromagnetic Semiconducting Chalcopyrite". Defect and Diffusion Forum 423 (17.04.2023): 23–31. http://dx.doi.org/10.4028/p-vah911.

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Herein, we have predicted the electronic and magnetic properties and magnetocrystalline anisotropy (MCA) of the most stabilized antiferromagnetic (AFM) ground state of bulk chalcopyrite (CuFeS$_{2}$) and films with various different thicknesses. We have shown that the easy axis of bulk structure is along the [001] direction and it agrees with the results of neutron measurements. For the CuFeS$_{2}$ film, our results have indicated that the ground state of ultra-thin film is ferromagnetic (FM) and the easy axis of ultra-thin film is in-plane. As increased the thickness of the film, its ground state becomes the AFM, and the easy axis is changed as out-plane. It may be a natural candidate material for integrating spintronics.
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22

Lin, Ming-Wei, Houlong L. Zhuang, Jiaqiang Yan, Thomas Zac Ward, Alexander A. Puretzky, Christopher M. Rouleau, Zheng Gai i in. "Ultrathin nanosheets of CrSiTe3: a semiconducting two-dimensional ferromagnetic material". Journal of Materials Chemistry C 4, nr 2 (2016): 315–22. http://dx.doi.org/10.1039/c5tc03463a.

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23

Norby, Truls. "Proton Conduction in Solids: Bulk and Interfaces". MRS Bulletin 34, nr 12 (grudzień 2009): 923–28. http://dx.doi.org/10.1557/mrs2009.214.

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AbstractTruly proton-conducting materials would have an immense impact on sustainable energy technologies for the 21st century, through efficient fuel cells, electrolyzers, and gas-separation membranes. However, proton conduction combined with materials stability seems difficult to achieve, and some hurdles and pathways are outlined in this article. Problems, possibilities, and artifacts of transport across and along interfaces are discussed, linked mainly to space-charge layer properties and engineering of the grain-boundary core and to water in nanovoids. The importance of protons in many semiconducting functional oxides is also explained. At lower temperatures and in humid environments, the presence of protonated cation vacancies (Ruetschi defects) is predicted and is expected to play an important role in photoelectrochemistry, catalysis, and surface transport.
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24

Chen, Zhihong, Xu Du, Mao-Hua Du, C. Daniel Rancken, Hai-Ping Cheng i Andrew G. Rinzler. "Bulk Separative Enrichment in Metallic or Semiconducting Single-Walled Carbon Nanotubes". Nano Letters 3, nr 9 (wrzesień 2003): 1245–49. http://dx.doi.org/10.1021/nl0344763.

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Brabec, Christoph J., Thomas Nann i Sean E. Shaheen. "Nanostructured p–n Junctions for Printable Photovoltaics". MRS Bulletin 29, nr 1 (styczeń 2004): 43–47. http://dx.doi.org/10.1557/mrs2004.16.

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AbstractBy controlling the morphology of organic and inorganic semiconductors on a molecular scale, nanoscale p–n junctions can be generated in a bulk composite. Such a composite is typically called a bulk heterojunction composite, which can be considered as one virtual semiconductor combining the electrical and optical properties of the individual components. Solar cells are one attractive application for bulk heterojunction composites. Conjugated polymers or oligomers are the favorite p-type semiconducting class for these composites, while for the n-type semiconductor, inorganic nanoparticles as well as organic molecules have been investigated. Due to the solubility of the individual components, printing techniques are used to fabricate them.
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26

Guguchia, Z., A. Kerelsky, D. Edelberg, S. Banerjee, F. von Rohr, D. Scullion, M. Augustin i in. "Magnetism in semiconducting molybdenum dichalcogenides". Science Advances 4, nr 12 (grudzień 2018): eaat3672. http://dx.doi.org/10.1126/sciadv.aat3672.

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Transition metal dichalcogenides (TMDs) are interesting for understanding the fundamental physics of two-dimensional (2D) materials as well as for applications to many emerging technologies, including spin electronics. Here, we report the discovery of long-range magnetic order belowTM= 40 and 100 K in bulk semiconducting TMDs 2H-MoTe2and 2H-MoSe2, respectively, by means of muon spin rotation (μSR), scanning tunneling microscopy (STM), and density functional theory (DFT) calculations. The μSR measurements show the presence of large and homogeneous internal magnetic fields at low temperatures in both compounds indicative of long-range magnetic order. DFT calculations show that this magnetism is promoted by the presence of defects in the crystal. The STM measurements show that the vast majority of defects in these materials are metal vacancies and chalcogen-metal antisites, which are randomly distributed in the lattice at the subpercent level. DFT indicates that the antisite defects are magnetic with a magnetic moment in the range of 0.9 to 2.8 μB. Further, we find that the magnetic order stabilized in 2H-MoTe2and 2H-MoSe2is highly sensitive to hydrostatic pressure. These observations establish 2H-MoTe2and 2H-MoSe2as a new class of magnetic semiconductors and open a path to studying the interplay of 2D physics and magnetism in these interesting semiconductors.
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27

Treat, Neil D., i Michael L. Chabinyc. "Phase Separation in Bulk Heterojunctions of Semiconducting Polymers and Fullerenes for Photovoltaics". Annual Review of Physical Chemistry 65, nr 1 (kwiecień 2014): 59–81. http://dx.doi.org/10.1146/annurev-physchem-040513-103712.

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28

Kim, Ji-Hoon, Hee Un Kim, Yun-Sun Byun i Do-Hoon Hwang. "Bulk Heterojunction Organic Solar Cells Fabricated Using Low-Band-Gap Semiconducting Polymers". Journal of Nanoscience and Nanotechnology 14, nr 8 (1.08.2014): 5926–31. http://dx.doi.org/10.1166/jnn.2014.8796.

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29

Al-Bati, Sameer N., Omar A. Lafi, Mousa M. A. Imran i Moh’d M. Shaderma. "Electrical studies on bulk Se96Sn4 semiconducting glass before and after gamma irradiation". Journal of Physics and Chemistry of Solids 71, nr 11 (listopad 2010): 1534–39. http://dx.doi.org/10.1016/j.jpcs.2010.07.023.

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30

Nazim, M., Sadia Ameen, M. Shaheer Akhtar i Hyung Shik Shin. "Asymmetric, efficient π-conjugated organic semiconducting chromophore for bulk-heterojunction organic photovoltaics". Dyes and Pigments 149 (luty 2018): 141–48. http://dx.doi.org/10.1016/j.dyepig.2017.09.048.

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31

Semenenko, Bogdan, i Pablo Esquinazi. "Diamagnetism of Bulk Graphite Revised". Magnetochemistry 4, nr 4 (22.11.2018): 52. http://dx.doi.org/10.3390/magnetochemistry4040052.

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Recently published structural analysis and galvanomagnetic studies of a large number of different bulk and mesoscopic graphite samples of high quality and purity reveal that the common picture assuming graphite samples as a semimetal with a homogeneous carrier density of conduction electrons is misleading. These new studies indicate that the main electrical conduction path occurs within 2D interfaces embedded in semiconducting Bernal and/or rhombohedral stacking regions. This new knowledge incites us to revise experimentally and theoretically the diamagnetism of graphite samples. We found that the c-axis susceptibility of highly pure oriented graphite samples is not really constant, but can vary several tens of percent for bulk samples with thickness t ≳ 30 μ m, whereas by a much larger factor for samples with a smaller thickness. The observed decrease of the susceptibility with sample thickness qualitatively resembles the one reported for the electrical conductivity and indicates that the main part of the c-axis diamagnetic signal is not intrinsic to the ideal graphite structure, but it is due to the highly conducting 2D interfaces. The interpretation of the main diamagnetic signal of graphite agrees with the reported description of its galvanomagnetic properties and provides a hint to understand some magnetic peculiarities of thin graphite samples.
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32

SRIVASTAVA, ANURAG, i NEHA TYAGI. "PRESSURE INDUCED PHASE TRANSITION AND ELECTRONIC PROPERTIES OF 1D ZnO NANOCRYSTAL: AN AB INITIO STUDY". International Journal of Nanoscience 11, nr 05 (październik 2012): 1250035. http://dx.doi.org/10.1142/s0219581x12500354.

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We have analyzed the one-dimensional (1D) ZnO nanocrystals in its wurtzite (B4); zinc-blende (B3) and rocksalt (B1) type phases, by means of density functional theory (DFT) calculations. The energetic stability of nanocrystal has been analyzed using Revised Perdew–Burke–Ernzerhof (revPBE) type parameterized GGA potential. The B3 type phase is most stable amongst other phases of nanocrystals. The computation of ground state properties for all the phases of ZnO nanocrystals finds that the bulk modulus are smaller than their bulk counterpart, in turn softening the material at reduced dimensions. The electronic band structure analysis confirms the semiconducting nature of B4 type phase whereas other two are metallic.
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33

Tawati, D. M., Aghzeila B. Mohamed, N. A. Hussein, H. A. saltani i A. K. Arof. "SEEBECK COEFFICIENT OF TERNARY SEMICONDUCTING VANADIUM–COBALT– TELLURITE GLASSES". EPH - International Journal of Applied Science 7, nr 3 (27.09.2021): 30–34. http://dx.doi.org/10.53555/eijas.v7i3.59.

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The Seebeck coefficient, S, of semiconducting V2O5–CoO–TeO2 bulk glasses have been measured in the temperature range 300 – 506 K. The glass samples were prepared by the press–quenching method from glass melt. The thermoelectric power, TEP, data revealed that all glasses were n–type semiconductors with Seebeck coefficient in the range from –602 to –790 μV/k. The investigations provide information on the polaron formation and the disorder energy due to random fields. The Seebeck coefficient was found to be dependent on the CoO content and the temperature independent of TEP for all glass compositions. TEP experimental results were adequately explained by Heikes’ formula.
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34

Jacob, S. Santhosh Kumar, Saravananakumar S. i R. Saravanan. "Synthesis and Characterization of the Nano Semiconducting Material Cadmium Sulphide". Materials Science Forum 699 (wrzesień 2011): 79–88. http://dx.doi.org/10.4028/www.scientific.net/msf.699.79.

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In this work, CdS nano particles were synthesized using aqueous precipitation method; This method is simple, fast and can be carried out at room temperature. Various techniques like X-ray powder diffraction and UV-visible absorption spectroscopy are used for the structural characterization like electron density distribution and estimation of inter atomic distances between the atoms of the nano particles. The optical band gap of this material has been determined in order to establish a relationship between energy gap of bulk and nano materials.
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35

Jivani, A. R., J. K. Baria, Paresh S. Vyas i Ashvin R. Jani. "Theoretical Investigations of Some Physical Properties of HgX (X = S, Se and Te) Semiconducting Compounds". Advanced Materials Research 1141 (sierpień 2016): 153–55. http://dx.doi.org/10.4028/www.scientific.net/amr.1141.153.

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In the present work, we have investigated total energy, bulk modulus, elastic constants, pressure derivatives of elastic constants and pressure derivative of bulk modulus of HgX (X=S, Se and Te) semiconducting compounds using higher-order perturbation scheme with the application of our own proposed model potential. To consider exchange and correlation effect to the dielectric function, the local-field correction function proposed by Farid et al is employed in the present study. In most of the cases the experimental and other theoretical results of the aforesaid physical properties of the HgX are not available in the literature and hence this study provides a better set of theoretical results of the physical properties of the materials for future comparison either with theoretical or experimental results.
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36

Jhakal, R. K., M. D. Sharma i U. Paliwal. "A Theoretical Estimation of Optical, Vibrational and Structural Properties of II–VI Quaternary Alloy Zn0.5Cd0.5SySe1–y". Ukrainian Journal of Physics 68, nr 3 (11.05.2023): 184. http://dx.doi.org/10.15407/ujpe68.3.184.

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We present a theoretical estimation of optical, vibrational, and structural properties of II–VI semiconducting quaternary alloy Zn0.5Cd0.5SySe1−y for 0 < y < 1 giving total 10 compositions. The estimation of refractive index, elastic constants, bulk modulus, and vibrational frequencies are performed using the important input parameters provided by the empirical pseudopotential method. In this method, the bandgaps are computed, and the alloying effects are modeled through the modified virtual crystal approximation. We have computed the static refractive index, static and high-frequency dielectric constants, longitudinal and transverse optical phonon frequencies, elastic constants, bulk modulus, and cohesive energy for 10 compositions of the alloy. The results are compared to other experimental and theoretical values wherever available.
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Chattopadhyay, Debjit, Izabela Galeska i Fotios Papadimitrakopoulos. "A Route for Bulk Separation of Semiconducting from Metallic Single-Wall Carbon Nanotubes". Journal of the American Chemical Society 125, nr 11 (marzec 2003): 3370–75. http://dx.doi.org/10.1021/ja028599l.

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Singh, Surya Prakash, i G. D. Sharma. "Near Infrared Organic Semiconducting Materials for Bulk Heterojunction and Dye-Sensitized Solar Cells". Chemical Record 14, nr 3 (30.05.2014): 419–81. http://dx.doi.org/10.1002/tcr.201300041.

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Wang, Chao, Kyohei Nakano, Hsiao Fang Lee, Yujiao Chen, You-Lee Hong, Yusuke Nishiyama i Keisuke Tajima. "Intermolecular Arrangement of Fullerene Acceptors Proximal to Semiconducting Polymers in Mixed Bulk Heterojunctions". Angewandte Chemie 130, nr 24 (14.05.2018): 7152–57. http://dx.doi.org/10.1002/ange.201801173.

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Kramberger, Christian, Marianna V. Kharlamova i Kazuhiro Yanagi. "Multifrequency Raman spectroscopy on bulk (11,10) chirality enriched semiconducting single-walled carbon nanotubes". physica status solidi (b) 251, nr 12 (5.09.2014): 2432–36. http://dx.doi.org/10.1002/pssb.201451182.

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Wang, Chao, Kyohei Nakano, Hsiao Fang Lee, Yujiao Chen, You-Lee Hong, Yusuke Nishiyama i Keisuke Tajima. "Intermolecular Arrangement of Fullerene Acceptors Proximal to Semiconducting Polymers in Mixed Bulk Heterojunctions". Angewandte Chemie International Edition 57, nr 24 (14.05.2018): 7034–39. http://dx.doi.org/10.1002/anie.201801173.

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Özkişi, Harun, i Seyfettin Dalgıç. "Density Functional Calculation for BP/GaN Heterostructures". Materials Science Forum 916 (marzec 2018): 45–49. http://dx.doi.org/10.4028/www.scientific.net/msf.916.45.

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Recently, it has become indispensable to use semiconducting nanostructures in the production and development of electronic devices. In this study, the bulk and nanowire heterostructures of the BP / GaN system have been investigated for the structures pure and Te atom doped. In calculations, the plane wave self-consistent field program based on density functional theory was used. The average potentials of the aforementioned systems have been calculated and the interface effect has investigated.
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43

Murugavel, S., i S. Asokan. "Composition tunable memory and threshold switching in Al20AsxTe80−x semiconducting glasses". Journal of Materials Research 13, nr 10 (październik 1998): 2982–87. http://dx.doi.org/10.1557/jmr.1998.0408.

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I-V studies indicate a composition dependent switching behavior (Memory or Threshold) in bulk Al20AsxTe80−x glasses, which is determined by the coordination and composition of aluminum. Investigations on temperature and thickness dependence of switching and structural studies on switched samples suggest thermal and electronic mechanisms of switching for the memory and threshold samples, respectively. The present results also show that these samples have a wider composition range of threshold behavior with lower threshold voltages compared to other threshold samples.
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Tsogbadrakh, Namsrai. "First-Principles Study of Carrier-Mediated and Vacancy-Induced Ferromagnetism in Molybdenum Disulfide Monolayer". Solid State Phenomena 323 (30.08.2021): 166–74. http://dx.doi.org/10.4028/www.scientific.net/ssp.323.166.

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We have investigated the magnetic properties of semiconducting molybdenum disulfide (MoS2) monolayer (ML) using the plane wave self-consistent field (PWscf) method within the framework of density functional theory (DFT). The pristine semiconducting bulk MoS2 is nonmagnetic (NM), due to the spin pairing of two electrons. We have indicated that the carrier-mediated ferromagnetism is available on the MoS2 ML as both the hole and electron carriers. The ordinary neutral S (VS0) vacancy creates the localized vacancy defect level and this level does not create the ferromagnetic (FM) state due to the spin pairing of two electrons by three Mo dangling bonds. While we have shown that the FM state is possible to create the FM state, due to the additional hole and electron carriers on the valency band and localized vacancy defect level by positively and negatively charged S (VS1+ and VS1- ) and positively charged Mo (VMo1+) vacancies.
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Malicka, Ewa, Małgorzata Karolus, Tadeusz Groń, Adrian Gudwański, Andrzej Ślebarski, Jerzy Goraus, Monika Oboz, Bogdan Sawicki i Joanna Panek. "Influence of Crystallite Size on the Magnetic Order in Semiconducting ZnCr2Se4 Nanoparticles". Materials 12, nr 23 (28.11.2019): 3947. http://dx.doi.org/10.3390/ma12233947.

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Structural, electrical, magnetic, and specific heat measurements were carried out on ZnCr2Se4 single crystal and on nanocrystals obtained from the milling of this single crystal after 1, 3, and 5 h, whose crystallite sizes were 25.2, 2.5, and 2 nm, respectively. For this purpose, the high-energy ball-milling method was used. The above studies showed that all samples have a spinel structure, and are p-type semiconductors with less milling time and n-type with a higher one. In turn, the decrease in crystallite size caused a change in the magnetic order, from antiferromagnetic for bulk material and nanocrystals after 1 and 3 h of milling to spin-glass with the freezing temperature Tf = 20 K for the sample after 5 h of milling. The spin-glass behavior for this sample was derived from a broad peak of dc magnetic susceptibility, a splitting of the zero-field-cooling and field-cooling susceptibilities, and from the shift of Tf towards the higher frequency of the ac susceptibility curves. A spectacular result for this sample is also the lack of a peak on the specific heat curve, suggesting a disappearance of the structural transition that is observed for the bulk single crystal.
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Bengasmia, Farouk, Ammar Bengasmia, Lotfi Boutahar, Hamza Rekab-Djabri i Salah Daoud. "Hydrostatic pressure effect on the structural parameters of GaSb semiconducting material: Ab-initio calculations". Journal of Physical & Chemical Research 1, nr 2 (7.01.2023): 25–30. http://dx.doi.org/10.58452/jpcr.v1i2.24.

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Ab-initio calculations were performed to investigate the ground state and hydrostatic pressure effecton the structural properties of GaSb semiconducting material. The projected augmented wavepseudopotentials (PAW) approach in the framework of the density functional theory (DFT) asimplemented in the Quantum Espresso code was used. The exchange-correlation functional wasdescribed with the generalized gradient approximation (GGA). Utilizing the energy - volume (E-V)data, our values of the equilibrium lattice constant, the bulk modulus, and the pressure derivative ofthe bulk modulus of GaSb semiconductor obtained from the Birch–Murnaghan equation of statewere found 6.220 Å, 44.84 GPa and 4.22, respectively. Our obtained data agree well with theavailable experimental values and other theoretical data of the literature. In addition, the meltingpoint, the lattice thermal expansion coefficient and the microhardness of our material of interestwere also calculated and compared with the available experimental data of the literature.
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Gros, Claude, Léo Bucher, Nicolas Desbois i Ganesh D. Sharma. "Bulk Heterojunction Solar Cells: Porphyrins, Dpps and Bodipys As Building Blocks for Efficient Donor Materials". ECS Meeting Abstracts MA2022-01, nr 15 (7.07.2022): 2484. http://dx.doi.org/10.1149/ma2022-01152484mtgabs.

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Among the different types of organic semiconducting materials, porphyrins, DPPs and BODIPYs based small molecules and conjugated polymers have attracted high interest as efficient semiconducting organic materials for dye sensitized solar cells (DSSC) and bulk heterojunction (BHJ) organic solar cells. Interestingly, they offer a synergistic effect when used together within a material, this coming from high complementarities of their absorption spectra, adapted prerequisites in order to be efficient energy transfer partners, and suitable frontier orbitals energy levels. We have recently designed different porphyrins, DPPs and BODIPYs based electron donor small molecules/polymers for bulk heterojunction organic solar cells (Figure), and now report their synthesis as well as the study of their electrochemical, photophysical and photovoltaic properties. The “Consulat Général de France à Québec” and the “Programme Samuel de Champlain 2015/2016” are acknowledged for funding. We are thankful to Prof. P. D. Harvey (Université de Sherbrooke, CA) for PhD co-supervising and photophysical measurements. REFERENCES Bucher, L.; Desbois, N.; Harvey, P. D.; Sharma, G. D.; Gros, C. P., Solar RRL 2017, 1 (12), 1700127. Bucher, L.; Tanguy, L.; Fortin, D.; Desbois, N.; Harvey, P. D.; Sharma, G. D.; Gros, C. P., ChemPlusChem 2017, 82, 625-630 (Biofest special issue). Bucher, L.; Desbois, N.; Harvey, P. D.; Gros, C. P.; Sharma, G. D., ACS Appl. Mater. Interfaces 2018, 10 (1), 992-1004. Bucher, L.; Tanguy, L.; Desbois, N.; Karsenti, P.-L.; Harvey, P. D.; Gros, C. P.; Sharma, G. D., Solar RRL 2018, 2 (1), 1700168. Figure 1
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Chen, Zongbin, Tingzhou Li, Tie Yang, Heju Xu, Rabah Khenata, Yongchun Gao i Xiaotian Wang. "Palladium (III) Fluoride Bulk and PdF3/Ga2O3/PdF3 Magnetic Tunnel Junction: Multiple Spin-Gapless Semiconducting, Perfect Spin Filtering, and High Tunnel Magnetoresistance". Nanomaterials 9, nr 9 (19.09.2019): 1342. http://dx.doi.org/10.3390/nano9091342.

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Spin-gapless semiconductors (SGSs) with Dirac-like band crossings may exhibit massless fermions and dissipationless transport properties. In this study, by applying the density functional theory, novel multiple linear-type spin-gapless semiconducting band structures were found in a synthesized R 3 − c -type bulk PdF3 compound, which has potential applications in ultra-fast and ultra-low power spintronic devices. The effects of spin-orbit coupling and on-site Coulomb interaction were determined for the bulk material in this study. To explore the potential applications in spintronic devices, we also performed first-principles combined with the non-equilibrium Green’s function for the PdF3/Ga2O3/PdF3 magnetic tunnel junction (MTJ). The results suggested that this MTJ exhibits perfect spin filtering and high tunnel magnetoresistance (~5.04 × 107).
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Narayan, Monishka Rita, i Jai Singh. "Exciton dissociation and design optimization in P3HT:PCBM bulk-heterojunction organic solar cell". Canadian Journal of Physics 92, nr 7/8 (lipiec 2014): 853–56. http://dx.doi.org/10.1139/cjp-2013-0523.

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The rate of Frenkel exciton dissociation in P3HT:PCBM bulk-heterojunction organic solar cell was calculated using the newly derived interaction operator between charge transfer exciton and molecular vibrational energy. The PCBM LUMO energy levels were tuned to investigate their impact on the rate of dissociation of a Frenkel exciton into free pair of electron and hole. In the latter part of the study, the PCBM LUMO energy level was set to −4.10 eV and design optimization was performed on PET/PEDOT:PSS/TFB/ P3HT:PCBM/Ca bulk-heterojunction organic solar cell using the semiconducting thin film optics simulation software. Each of the layer thicknesses were optimized for maximum photon absorbance in the P3HT:PCBM active layer and a high power conversion efficiency of 7.46% was obtained.
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Cimrová, Věra, Veronika Pokorná, Vagif Dzhabarov i Drahomír Výprachtický. "Semiconducting Conjugated Copolymer Series for Organic Photonics and Electronics". Materials Science Forum 851 (kwiecień 2016): 173–78. http://dx.doi.org/10.4028/www.scientific.net/msf.851.173.

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Donor–acceptor copolymer series containing 4,6-di (thien-2′-yl) thieno [3,4-c][1,2,5] thiadiazole or its derivatives serving as electron-acceptor units and various electron-donor units such as 9,9-bis (alkyl) fluorene, benzene, bithiophene or carbazole derivatives is reported. These copolymers possess narrow optical band gap in the range of 1.0 - 1.5 eV depending on the character of the donor units. They exhibit relatively high electron affinity. Absorption of copolymer thin films covers the whole visible spectral region extended up to NIR for some copolymers. The influence of side chain nature and molecular weight on their photophysical properties is shown. Selected copolymers are used in the blends with fullerene derivative [6,6]-phenyl-C61-butyric acid methyl ester ([60]PCBM) as active layers in bulk heterojunction photovoltaic devices. The results are discussed in relation to the copolymer structure, side chain nature and molecular weight.
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